TWI393273B - Method for manufacturing light emitting diode assembly - Google Patents

Description

Method for manufacturing light emitting diode assembly

The present invention relates to a method for manufacturing a light emitting diode (LED) component, and more particularly to a method for manufacturing a special LED component, which is formed by directly electrically connecting an LED chip package to a circuit substrate. .

In everyday life, in order to be able to identify objects and orientations in dark or dark environments, it is often desirable to use illumination components to provide illumination. Among these light-emitting components, since the light-emitting diode has the advantages of long service life and low power consumption, it has gradually become the mainstream lighting component in the global trend of energy saving and carbon reduction.

However, in addition to a wide range of lighting applications, light-emitting diodes are often assembled into a light-emitting diode assembly for backlighting or other related electronic devices because of their long life and low power consumption. use. In a plurality of light-emitting diode assemblies, when a flip-chip diode (Light Emitting Diode (LED) package structure is fabricated by flip chip technology, the LED flip-chip structure can be directly connected to the carrier substrate without wiring, so Used by the public.

Under the premise, the following will further illustrate the process for fabricating an LED component using a flip chip LED package structure in conjunction with the drawings. Please refer to the first A to the first E drawings, which show a series of manufacturing processes of the LED components. As shown in FIG. A, when fabricating a flip chip LED package structure 100 (labeled in the first E diagram), an LED flip chip structure 1 must be fabricated. In this case, a light transmissive substrate layer must be prepared. 11.

Next, a buffer layer 12, an N-type electrode cladding sub-layer 13, a multiple quantum well 14, and a P-type electrode coating must be formed. A P type electrode cladding sub-layer 15 , a light-transmitting conductive film 16 and a reflective layer 17 .

The buffer layer 12 is laminated on the transparent substrate layer 11; the N-type electrode coating sub-layer 13 is laminated on the buffer layer 12; the multiple quantum well 14 is partially superposed on the N-type electrode coating sub-layer 13; The electrode coating sub-layer 15 is superposed on the multiple quantum well 14; the transparent conductive film 16 is laminated on the P-type electrode coating sub-layer 15; the reflective layer 17 is coated with the multiple quantum well 14 and the P-type electrode coated The layer 15 and the light-transmitting conductive film 16. Then, a P-type electrode 18 must be extended from the light-transmitting conductive film 16, and an N-type electrode 19 is extended from the N-type electrode covering sub-layer 13. At the same time, gold (Gold; Au), tin (Tin; Sn) or gold-tin (Gold-Tin; Au-Sn) alloy (not drawn) may be plated on the P-type electrode 18 and the N-type electrode 19, respectively. The LED flip chip structure 1 described above can be fabricated.

As shown in FIG. B, next, a carrier substrate 2 having a substrate body 21, a P-type electrode layer 22 and an N-type electrode layer 23 must be prepared. The substrate body 21 has an upper surface 211, a lower surface 212, a first side 213 and a second side 214. The P-type electrode layer 22 and the N-type electrode layer 23 are respectively disposed and covered with the first side 213 and the second side 214.

As shown in FIG. C, after the carrier substrate 2 is prepared, a conductive member 3 and 3a must be respectively disposed on the P-type electrode layer 22 and the N-type electrode layer 23 of the carrier substrate 2. Preferably, the conductive members 3 and 3a are provided. It may be a gold plated or silver plated solder joint on the carrier substrate 2.

As shown in FIG. D, when the conductive elements 3 and 3a are gold-plated or silver-plated solder joints on the carrier substrate 2, the above-mentioned LED flip-chip structure 1 must be inverted, and the ambient temperature is raised to a eutectic by a eutectic process. The temperature causes the gold or silver element in the gold-plated or silver-plated solder joint to infiltrate the gold (Gold; Au), tin (Tin; Sn) or gold-tin (Gold-) plated on the P-type electrode 18 and the N-type electrode 19. In the Tin; Au-Sn) alloy (not drawn), the P-type electrode 18 and the N-type electrode 19 of the LED flip-chip structure 1 are electrically connected to the P-type electrode layer of the carrier substrate 2 via the conductive elements 3 and 3a, respectively. 22 and N-type electrode layer 23. In practical applications, the conductive elements 3 and 3a may also be gold (Gold; Au), tin (Tin; Sn) or gold-tin (Gold-Tin; Au-Sn) alloy provided on the carrier substrate 2; Gold-plated or silver-plated solder joints may be formed on the type electrode 18 and the N-type electrode 19 to perform the above-described eutectic process. In addition, when the conductive elements 3 and 3a are solder balls or solder pastes, the P-type electrodes 18 and the N-type electrodes 19 can also be electrically connected via the conductive elements 3 and 3a through a reflow process. The P-type electrode layer 22 and the N-type electrode layer 23 are provided.

As shown in FIG. E, after the P-type electrode 18 and the N-type electrode 19 are electrically connected to the P-type electrode layer 22 and the N-type electrode layer 23, respectively, a light-transmissive encapsulating material 4 must be packaged with an LED flip-chip structure. 1. The conductive elements 3 and 3a are formed, and after the transparent encapsulating material 4 is cured, the above-mentioned flip chip LED package structure 100 is fabricated. Finally, the flip-chip LED package structure 100 is soldered to a circuit substrate (not shown) to form an LED component (not shown).

It can be easily understood by those skilled in the art that in the above-mentioned prior art, the P-type electrode 18 and the N-type electrode 19 of the LED flip-chip structure 1 must be electrically connected to the carrier, respectively. The P-type electrode layer 22 of the substrate 2 and the N-type electrode layer 23 are then filled into the light-transmissive encapsulating material 4 to encapsulate the LED flip-chip structure 1 and the conductive elements 3 and 3a; therefore, the bonding of the LED flip-chip structure 1 must be simultaneously performed. In the soldering process of the carrier substrate 2, the LED flip chip structure 1 is packaged to fabricate a package process of the flip chip LED package structure 100. Then, it is very inconvenient to solder the flip-chip LED package structure 100 that has been packaged to the circuit substrate, thereby fabricating the LED assembly.

In addition, since the filling pressure must be applied in a mold when the light-transmitting packaging material 4 is poured; therefore, the problem that the light-transmitting packaging material 4 overflows to the carrier substrate 2 is easily caused; moreover, the conductive member 3 and 3a is also pressed by the filling pressure to increase the electrical connection failure rate of the conductive members 3 and 3a.

Under this premise, the inventor of this case deeply felt the need to develop a new method of manufacturing LED components to simultaneously improve the above problems.

In view of the inconvenience that the manufacturing method of the LED component provided by the prior art is continually required to continue the eutectic process and the packaging process to produce a flip-chip LED package structure, the package may easily cause the transparent package material to overflow. The problem of leakage to the carrier substrate and the problem of increasing the electrical connection failure rate of the conductive element. Accordingly, the main object of the present invention is to provide a method for fabricating an LED device by fabricating an LED chip package by a packaging process, such that the LED chip package has an exposed P-type electrode and an N-type electrode. The fabricated LED chip package can be directly disposed on a circuit substrate instead of the cumbersome flip chip LED package structure. Thereby, the above various problems can be effectively solved at the same time.

The invention solves the problems of the prior art, and the technical method adopted provides a manufacturing method of a light emitting diode (LED) package assembly, which is first coated with a reflective layer on a substrate layer. Coating a light-emitting layer on the reflective layer, and extending a reflective layer from the light-emitting layer toward the substrate layer to form a P-type electrode and an N-type electrode, thereby forming an LED wafer structure; and then using a transparent package The material encapsulates the LED wafer structure, so that the P-type electrode and the N-type electrode are exposed to the light-transmissive encapsulation material, thereby forming an LED chip package; finally, the P-type electrode and the N-type electrode of the LED chip package are electrically connected to a circuit. The substrate is used to fabricate the LED assembly.

In a preferred embodiment of the present invention, the LED wafer structure comprises a substrate layer, a reflective layer, a light-transmissible conductive sub-layer, and a P-type electrode coating sub-layer (P type electrode). A cladding sub-layer), a light-transmissible multiple quantum well and an N-type electrode cladding sub-layer. The reflective layer is coated on the substrate layer, the light-transmissive conductive sub-layer is coated on the reflective layer, the P-type electrode coating sub-layer is coated on the light-transmitting conductive sub-layer, and the light-transmitting multiple quantum well system is coated on the P-type electrode coated The layer, the N-type electrode coating sub-layer is coated on the light-transmitting multiple quantum well. The light-transmitting conductive sub-layer, the P-type electrode coating sub-layer, the light-transmitting multiple quantum well and the N-type electrode coating sub-layer can be regarded as the above-mentioned light-emitting layer.

In the manufacturing method of the LED component disclosed in the example of the present invention, the LED chip package is directly fabricated by the packaging process, and the LED chip is fabricated. The package has one of the exposed P-type electrodes and an N-type electrode; therefore, the fabricated LED chip package can be directly disposed on a circuit substrate instead of the cumbersome flip-chip LED package structure, thereby fabricating the LED assembly. Obviously, the convenience of fabricating the LED assembly can be greatly improved by the above-described manufacturing method of the LED module.

In the manufacturing method of the LED module disclosed in the present invention, the LED chip package is directly formed by the packaging process, and the carrier substrate is not used at all in the process of fabricating the LED chip package; therefore, it can be performed In the packaging process, there is no problem that the light-transmitting packaging material overflows to the carrier substrate, and there is no problem of poor electrical connection caused by the filling pressure applied when filling the light-transmitting packaging material, and The volume of the LED chip package is similar to that of the LED chip structure, and even if the volume of the LED chip package is much smaller than that of the conventional flip chip LED package structure, the space utilization ratio of the circuit chip package for the LED chip package is improved.

According to the above, the manufacturing method of the LED component disclosed by the present invention can not only improve the convenience of fabricating the LED component, but also improve the quality of the LED component, and improve the space utilization of the LED chip package of the circuit substrate. .

The specific embodiments of the present invention will be further described by the following examples and drawings.

The manufacturing method of the light emitting diode (LED) component provided by the invention can be widely used in the manufacture of various LED components, and the related combined embodiments are numerous, so it will not be repeated here. Only one of the preferred embodiments will be specifically described.

Please refer to FIGS. 2A to 2D, which show a series of processes for the LED components proposed in the preferred embodiment of the present invention. The focus of the present disclosure is to first fabricate an LED chip package 200 (labeled in FIG. 2B), and then fabricate the LED assembly 300 (labeled in the second D diagram). As shown in FIG. 2A, it shows a process for fabricating an LED wafer structure in a preferred embodiment of the present invention. When the LED chip package 200 is fabricated, an LED wafer structure 5 must be fabricated. In this case, a substrate layer 51 must be prepared.

Then, a light reflecting layer 52, a light-transmissible conductive sub-layer 53, a P type electrode cladding sub-layer 54 and a light transmissive layer must be sequentially formed. A light-transmissible multiple quantum well 55 and an N type electrode cladding sub-layer 56. The reflective layer 52 is coated on the base material layer 51, the light-transmitting conductive sub-layer 53 is coated on the reflective layer 52, the P-type electrode coating sub-layer 54 is coated on the transparent conductive sub-layer 53, and the light-transmitting multiple quantum well 55 is coated. The P-type electrode coating sub-layer 54 and the N-type electrode coating sub-layer 56 are coated on the light-transmitting multiple quantum well 55. The light-transmitting conductive sub-layer 53, the P-type electrode covering sub-layer 54, the light-transmitting multiple quantum well 55 and the N-type electrode covering sub-layer 56 can be regarded as a light-emitting layer 50.

The base material layer 51 may contain silicon carbide (the base material layer 51 may contain silicon carbide (SiC), aluminum oxide (Al ₂ O ₃ ), gallium arsenide (GaAs), Substrate of at least one of silicon (Si), sapphire, copper (cop), copper-copper alloy (Cu-W alloy), and gallium phosphide (GaP) The reflective layer 52 may be composed of a mixture of titanium dioxide and cerium oxide (TiO ₂ /SiO ₂ ), a mixture of aluminum oxide and cerium oxide (Al ₂ O ₃ /SiO ₂ ), or tantalum nitride and cerium oxide (Si). The composition of the ₃ N ₄ /SiO ₂ mixture. The light-transmitting conductive sub-layer 53 can be formed by annealing a nickel-gold (Ni-Au) metal film at a high temperature (about 500 to 550 ° C).

Then, a P-type electrode extending groove (not labeled) and an N-type electrode extending groove (not labeled) are respectively opened from the base material layer 51 toward the light-emitting layer 50 by a technique such as etching or drilling. The P-type electrode extension groove is opened to contact the P-type electrode coating sub-layer 54. The N-type electrode extending groove is opened to contact the N-type electrode covering sub-layer 56, and is insulated by an insulating film 57. Then, a P-type electrode 58 must be extended from the P-type electrode coating sub-layer 54 through the P-type electrode extending groove, and sequentially extended through the transparent conductive sub-layer 53, the reflective layer 52 and the substrate layer 51; The N-type electrode 59 passes through the N-type electrode extending sub-layer 56 through the N-type electrode extending groove, and sequentially passes through the light-transmitting multiple quantum well 55, the P-type electrode coating sub-layer 54, the light-transmitting conductive sub-layer 53, and the reflective layer 52. The base material layer 51 is extended and exposed, and is insulated from the light-transmitting multiple quantum well 55 and the P-type electrode coating sub-layer 54, the light-transmitting conductive sub-layer 53, the reflective layer 52, and the base material layer 51 by the insulating film 57. Thus far, the LED wafer structure 5 described above can be fabricated.

As shown in FIG. 2B, it shows a process for packaging an LED chip structure to fabricate an LED chip package in a preferred embodiment of the present invention. After the LED wafer structure 5 is fabricated, a packaging process can be performed. When the packaging process is performed, the LED chip structure 5 must be covered with a light-transmissive encapsulating material 6 to keep the P-type electrode 58 and the N-type electrode 59 exposed to the transparent encapsulating material 6. After the transparent encapsulating material 6 is cooled and solidified, The fabrication of the LED chip package 200 is completed.

As shown in FIG. 2C, it shows a process for preparing a circuit substrate in a preferred embodiment of the present invention. In addition, before the LED assembly 300 is fabricated, a circuit substrate 7 must be prepared. The circuit substrate 7 includes a substrate layer 71, a first circuit arrangement layer 72, and a second circuit arrangement layer 73. The first circuit arrangement layer 72 and the second circuit arrangement layer 73 are respectively disposed on both sides of the substrate layer 71. An LED driving (or control) circuit is disposed on at least one of the first circuit configuration layer 72 and the second circuit configuration layer 73. In the embodiment, the LED driving (or control) is disposed in the first circuit configuration layer 72. Circuit. Preferably, the circuit board 7 can be an FR4 (abbreviation for Flame Retardant 4) copper foil substrate, a printed circuit board or other circuit substrate on which an LED driving (or control) circuit is disposed.

As shown in the second D, it is shown in the preferred embodiment of the present invention that the LED chip package is placed and soldered to the circuit substrate. After the circuit board 7 is prepared, the LED chip package 200 can be disposed on the substrate 7 to electrically connect the P-type electrode 58 and the N-type electrode 59 in the LED chip package 200 to the first circuit arrangement layer 72. (or control) the circuit. Preferably, a soldering process is used to electrically connect the P-type electrode 58 and the N-type electrode 59 to the LED driving (or control) circuit disposed in the first circuit configuration layer 72. After the soldering process is completed, the LED assembly 300 described above can be fabricated. Preferably, the soldering process is bonded to the P-type electrode 58 and the N-type electrode 59 by soldering or soldering of a molten or semi-fused molten solder ball (not shown) or solder paste, or bonded to the first The circuit configuration layer 72 is provided with soldering pads on the LED drive (or control) circuit (not shown) and is reflowed and cured at low temperatures.

After reading the above-disclosed technology, it is believed that those skilled in the art can easily understand that, in the manufacturing method of the LED component 300 disclosed in the preferred embodiment of the present invention, the packaging process is directly performed. The LED chip package 200 is fabricated, and the LED chip package 200 has the exposed P-type electrode 58 and the N-type electrode 59. Therefore, the fabricated LED chip package 200 can directly replace the conventional chip-wrapped flip-chip LED. The package structure 100 is electrically connected to the circuit substrate 7 so that the LED assembly 300 is fabricated. Obviously, with the manufacturing method of the LED assembly 300 disclosed by the present invention, the convenience of fabricating the LED assembly 300 can be greatly improved.

In the manufacturing method of the LED module 300 disclosed in the present invention, the LED chip package 200 is directly formed by the packaging process, and the LED chip package 200 is not used in the prior art. The carrier substrate 2; therefore, in the packaging process, there is no problem that the light-transmissive encapsulating material 6 overflows to the carrier substrate 2, and there is no filling pressure applied when the light-filling encapsulating material 6 is filled. The problem of the poor electrical connection is made that the volume of the LED chip package 200 is similar to that of the LED chip structure 5, and even if the volume of the LED chip package 200 is much smaller than the volume of the conventional flip chip LED package structure 100, the The circuit board 7 configures the space utilization ratio of the LED chip package 200.

According to the above, the manufacturing method of the LED assembly 300 disclosed in the present invention can not only improve the convenience of fabricating the LED assembly 300, but also improve the quality of the LED assembly 300, and further improve the configuration of the LED chip package on the circuit substrate 7. 200 space utilization.

It can be seen from the above embodiments of the present invention that the present invention has industrial utilization value. The above embodiments are merely illustrative of the preferred embodiments of the present invention, and those skilled in the art will be able to make various other modifications and changes in the embodiments described herein. However, various modifications and changes made in accordance with the embodiments of the present invention are still within the scope of the invention and the scope of the invention.

100. . . Flip chip LED package structure

1. . . LED flip chip structure

11. . . Light transmissive substrate layer

12. . . The buffer layer

13. . . N-type electrode coating sublayer

14. . . Multiple quantum well

15. . . P-type electrode coating sublayer

16. . . Light-transmitting conductive film

17. . . Reflective layer

18. . . P-type electrode

19. . . N-type electrode

12. . . The buffer layer

2. . . Carrier substrate

twenty one. . . Substrate body

211. . . Upper surface

212. . . lower surface

213. . . First side

214. . . Second side

twenty two. . . P-type electrode layer

twenty three. . . N-type electrode layer

3, 3a. . . Conductive component

4. . . Light-transmissive packaging material

200. . . LED chip package

300. . . LED assembly

5. . . LED chip structure

51. . . Substrate layer

52. . . Reflective layer

53. . . Light-transmissive conductive sublayer

54. . . P-type electrode coating sublayer

55. . . Light transmissive multiple quantum well

56. . . N-type electrode coating sublayer

57. . . Insulating film

58. . . P-type electrode

59. . . N-type electrode

6. . . Light-transmissive packaging material

7. . . Circuit substrate

71. . . Substrate layer

72. . . First circuit configuration layer

73. . . Second circuit configuration layer

The first to first E drawings show a series of manufacturing processes of a conventional LED assembly;

2A is a process for fabricating an LED wafer structure in a preferred embodiment of the present invention;

2B is a process for packaging an LED chip structure to fabricate an LED chip package in a preferred embodiment of the present invention;

The second C diagram shows a process for preparing a circuit substrate in a preferred embodiment of the present invention;

The second D diagram shows a process for mounting and soldering an LED chip package to a circuit substrate in a preferred embodiment of the present invention.

200. . . LED chip package

300. . . LED assembly

5. . . LED chip structure

50. . . Luminous layer

51. . . Substrate layer

52. . . Reflective layer

53. . . Light-transmissive conductive sublayer

54. . . P-type electrode coating sublayer

55. . . Light transmissive multiple quantum well

56. . . N-type electrode coating sublayer

57. . . Insulating film

58. . . P-type electrode

59. . . N-type electrode

6. . . Light-transmissive packaging material

7. . . Circuit substrate

71. . . Substrate layer

72. . . First circuit configuration layer

73. . . Second circuit configuration layer

Claims (9)

A method for manufacturing a Light Emitting Diode (LED) module, comprising the steps of: (a) coating a reflective layer on a substrate layer, and coating a light-emitting layer on the reflective layer; (b) The luminescent layer passes through the reflective layer to extend a P-type electrode and an N-type electrode toward the substrate layer, thereby forming an LED wafer structure; and (c) coating the LED wafer structure with a light-transmissive encapsulation material, And exposing the P-type electrode and the N-type electrode to the light-transmissive encapsulating material to form an LED chip package; and (d) electrically connecting the P-type electrode and the N-type electrode of the LED chip package to the N-type electrode The circuit substrate is used to manufacture the LED assembly. The method for manufacturing a light-emitting diode assembly according to the first aspect of the invention, wherein the light-emitting layer in the step (a) comprises: a light-transmissible conductive sub-layer, A P-type electrode cladding sub-layer is coated on the light-transmissive conductive sub-layer; a light-transmissible multiple quantum well, The P-type electrode coating sub-layer is coated on the P-type electrode coating sub-layer; and an N-type electrode cladding sub-layer is coated on the light-transmitting multiple quantum well. The method for manufacturing a light-emitting diode assembly according to claim 2, wherein the P-type electrode sequentially passes through the transparent conductive sub-layer from the P-type electrode coating sub-layer, the reflective layer and The substrate layer extends. The method for manufacturing a light-emitting diode assembly according to claim 2, wherein the N-type electrode sequentially passes through the light-transmitting multiple quantum well from the N-type electrode coating sub-layer, and the P-type electrode The coating sub-layer, the light-transmitting conductive sub-layer, the reflective layer and the substrate layer are extended, and are insulated from the light-transmitting multiple quantum well and the P-type electrode coating sub-layer by an insulating mold. The method for manufacturing a light-emitting diode assembly according to claim 2, wherein the light-transmitting conductive sub-layer is formed by annealing a nickel-gold (Ni-Au) metal film at 500 to 550 ° C. . The method for manufacturing a light-emitting diode assembly according to claim 1, wherein the reflective layer is a mixture of titanium dioxide and cerium oxide (TiO ₂ /SiO ₂ ), aluminum oxide and germanium dioxide (Al). _{A 2} O ₃ /SiO ₂ ) mixture and at least one of a mixture of cerium nitride and cerium oxide (Si ₃ N ₄ /SiO ₂ ). The method for manufacturing a light-emitting diode assembly according to claim 1, wherein in the step (d), the P-type electrode and the N-type electrode are electrically connected to the circuit by a soldering process. Substrate. The method of manufacturing a light-emitting diode assembly according to claim 1, wherein the circuit substrate is a printed circuit board. The method of manufacturing a light-emitting diode assembly according to claim 8, wherein the printed circuit board is an FR4 (abbreviation for Flame Retardant 4) copper foil substrate.