KR20110035844A - Light emitting semiconductor device - Google Patents

Light emitting semiconductor device Download PDF

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Publication number
KR20110035844A
KR20110035844A KR1020100073278A KR20100073278A KR20110035844A KR 20110035844 A KR20110035844 A KR 20110035844A KR 1020100073278 A KR1020100073278 A KR 1020100073278A KR 20100073278 A KR20100073278 A KR 20100073278A KR 20110035844 A KR20110035844 A KR 20110035844A
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KR
South Korea
Prior art keywords
light emitting
insulating substrate
pad
pedestal
conductive adhesive
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Application number
KR1020100073278A
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Korean (ko)
Inventor
히데후미 다치이리
도시히코 오야마
Original Assignee
산켄덴키 가부시키가이샤
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Publication of KR20110035844A publication Critical patent/KR20110035844A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

(assignment)
The present invention can block the path where moisture is absorbed at both interfaces while improving the adhesiveness between the pedestal pad and the conductive adhesive, and prevents poor conduction between the pedestal pad and the conductive adhesive, thereby providing excellent semiconductor characteristics. To provide.
(Solution)
In the semiconductor light emitting device 1, an insulator substrate 2, a pedestal pad 31 provided on the first surface 2A of the insulator substrate 2, and an upper surface 31A and a side surface of the pedestal pad 31. A conductive adhesive material 4 formed on the 31S and reaching the first surface 2A of the insulating substrate 2 around the side surface 31S of the pedestal pad 31, and the top surface 31A of the pedestal pad 31. A conductive adhesive 4 is inserted into the light emitting element 5, the pedestal pad 31, the conductive adhesive 4 and the light emitting element 5, which are electrically and mechanically connected to one main electrode 51, The transparent resin 7 provided on the 1st surface 2A of the insulating board | substrate 2 is provided.

Description

Semiconductor Light Emitting Device {LIGHT EMITTING SEMICONDUCTOR DEVICE}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device, and in particular, a light emitting device is mounted on a pedestal pad on an insulating substrate, and the light emitting device is mounted on a light transmissive resin. It relates to a semiconductor light emitting device coated with.

BACKGROUND ART A light emitting display device having a low power consumption, a long lifetime, and suitable for thinning is known. For example, in Patent Document 1 below, an electrode pad portion having a hole in a central portion thereof is formed on an insulating substrate, and the solid light emission is formed through the conductive paste material in the hole. Disclosed is a light emitting display device that embeds an element and electrically connects the solid light emitting element to an electrode pad portion. Light emitting diodes manufactured as semiconductor chips are used for solid light emitting devices. The solid light emitting element and the electrode pad portion are covered with an outer sealing portion made of transparent resin.

Japanese Patent Laid-Open No. 11-087775

However, in the light emitting display device disclosed in Patent Document 1, no consideration was given to the following points.

In the light emitting display device, a metal is used for the electrode pad portion, and a resin-based adhesive material containing metal particles is used for the conductive paste material. The electrode pad portion and the conductive paste material are made of organic materials and inorganic materials. It has an adhesive structure. The light emitting display device is mounted on a wiring board or the like by using a solder, but during this mounting, a soldering reflow process is performed, and thermal shock occurs in the entire light emitting display device. In particular, this thermal shock causes peeling called a popcorn phenomenon at the interface where the adhesion between the inorganic material and the organic material is weak. In addition, when water outside the outer seal portion is absorbed by the portion where the interface between the electrode pad portion and the conductive paste material is peeled off, the water vaporizes due to thermal shock and expands to promote peeling of the interface. It becomes. Such separation of the interface between the electrode pad portion and the conductive paste material causes electrical conduction defects and thus affects the electrical characteristics of the light emitting display device.

The present invention is to solve the above problems. Accordingly, the present invention improves the adhesion between the pedestal pad and the conductive adhesive, and blocks the path where moisture is absorbed at the interface between the pedestal pad and the conductive adhesive, thereby preventing poor conduction between the pedestal pad and the conductive adhesive, thereby providing excellent semiconductor characteristics. It is to provide a light emitting device.

In order to solve the above problems, a first aspect of the present invention provides a semiconductor light emitting device comprising: an insulating substrate, a pedestal pad provided on a first surface of the insulating substrate, and an upper surface of the pedestal pad; And a main electrode formed by inserting a conductive adhesive on the side surface and reaching the first surface of the insulating substrate around the side of the pedestal pad, and by inserting the conductive adhesive on the top surface of the pedestal pad. A light transmitting element electrically and mechanically connected to the main body, a pedestal pad, a conductive adhesive, and a light emitting element are coated, and a light transmissive resin provided on the first surface of the insulating substrate.樹脂) is provided.

A second feature according to the embodiment is the semiconductor light emitting device according to the first feature, wherein the first external terminal is provided in an area away from the pedestal pad on the first surface of the insulating substrate, and the above-mentioned of the insulating substrate. It is formed on the first surface, and electrically connected to the pedestal pad and the first external terminal, and further provided with a metal wiring coated with a light-transmissive resin, the conductive adhesive is formed on the upper and side surfaces of the metal wiring The first surface of the insulating substrate is reached around the side surface of the metal wiring.

A third feature according to the embodiment is the semiconductor light emitting device according to the first feature, which is formed inside an insulating substrate immediately below the pedestal pad, and has one end electrically connected to the pedestal pad, The first connection hole wiring reaching the second surface opposite to the second surface from the second connection hole and on the second surface of the insulating substrate, and the other end of the first connection hole wiring. And a first external terminal electrically connected to the first terminal.

A fourth feature according to the embodiment is the semiconductor light emitting device according to any one of the first to third features, wherein the fourth feature is provided in an area away from the pedestal pad and the first external terminal on the first surface of the insulating substrate, A bonding pad coated with a transparent resin, a wire for electrically connecting the other main electrode of the light emitting element to the bonding pad, a pedestal pad on the first surface of the insulating substrate, A second external terminal provided in the area away from the first external terminal and the bonding pad and electrically connected to the bonding pad, wherein the conductive adhesive is formed on the upper and side surfaces of the bonding pad, and around the side of the bonding pad. In this case, the first surface of the insulating substrate is reached.

A fifth aspect of the present invention is the semiconductor light emitting apparatus according to the first aspect, comprising: a bonding pad provided on a first surface of an insulating substrate and spaced apart from a pedestal pad, and coated with a light transmissive resin; A second surface electrically connected to the other main electrode of the second electrode and the bonding pad, and formed inside the insulating substrate immediately below the pedestal pad, the one end being electrically connected to the pedestal pad, and facing from the first surface. A first connection hole wiring that reaches the first connection hole, a first external terminal provided on the second surface of the insulating substrate, and electrically connected to the other end of the first connection hole wiring, and formed inside the insulating substrate immediately below the bonding pad. The second connection hole wiring reaching one end of the bonding pad and electrically reaching the second surface, and a region away from the first external terminal of the insulating substrate. A second external terminal provided on the second surface and electrically connected to the other end of the second connection hole wiring, and an insulating property formed between the first external terminal and the second external terminal on the second surface of the insulating substrate. A resist layer is further provided.

According to the present invention, while improving the adhesion between the pedestal pad and the conductive adhesive, it is possible to block the path of water absorption at the interface between the pedestal pad and the conductive adhesive, thereby preventing poor conduction between the pedestal pad and the conductive adhesive, thereby providing excellent semiconductor characteristics. A light emitting device can be provided.

1 is a cross-sectional view of a semiconductor light emitting device according to Embodiment 1 of the present invention.
FIG. 2 is a plan view of the semiconductor light emitting device shown in FIG.
3 is a sectional view of a semiconductor light emitting device according to Embodiment 2 of the present invention.
4 is a plan view of the semiconductor light emitting device shown in FIG.
5 is a sectional view of a semiconductor light emitting device according to Embodiment 3 of the present invention.
FIG. 6 is a plan view of the semiconductor light emitting device shown in FIG.
FIG. 7 is a rear view of the semiconductor light emitting device shown in FIGS. 5 and 6.
8 is a sectional view of a semiconductor light emitting device according to Embodiment 4 of the present invention.
9 is a plan view of the semiconductor light emitting device shown in FIG.

Next, embodiments of the present invention will be described with reference to the drawings. In the following description of the drawings, the same or similar parts are given the same or similar reference numerals. However, the drawings are schematic and differ from those in reality. Moreover, the part in which the relationship and the ratio of a mutual dimension differ also in between drawings may be included.

In addition, the Example shown below illustrates the apparatus or method for actualizing the technical idea of this invention, and the technical idea of this invention does not specify the arrangement | positioning of each component, etc. as the following. The technical idea of the present invention can be variously changed in the claims.

Example 1

Embodiment 1 of the present invention describes an example in which the present invention is applied to a semiconductor light emitting device in which a light emitting diode is used as a light emitting element.

[Device Structure of Semiconductor Light Emitting Device]

As shown in FIG. 1 and FIG. 2, the semiconductor light emitting device 1 according to the first embodiment includes an insulating substrate 2 and a first surface of the insulating substrate 2. Formed on the pedestal pad 31 provided on 2A, the top surface 31A and the side surface 31S of the pedestal pad 31, and the insulating substrate 2 around the side surface 31S of the pedestal pad 31. One main electrode is formed by inserting the conductive adhesive 4 that reaches the first surface 2A and the conductive adhesive 4 into the upper surface 31A of the pedestal pad 31. The light emitting element 5 electrically and mechanically connected to the electromagnet 51, the pedestal pad 31, the conductive adhesive material 4, and the light emitting element 5 are covered with each other, and the substrate of the insulating substrate 2 is formed. A light-transmitting resin 7 provided on one surface 2A is provided.

The insulating substrate 2 is a substrate serving as a base of the semiconductor light emitting device, and a glass epoxy substrate is used for the insulating substrate 2, for example. The first surface 2A of this insulating substrate 2 is the upper surface in FIG. In Fig. 1, which faces the first surface 2A of the insulating substrate 2, the lower surface is the second surface (rear surface or mounting surface) 2B.

The pedestal pad 31 is slightly larger than the planar shape of the light emitting element 5, and is formed in a planar shape having a size in consideration of an alignment clearance dimension at the time of at least die bonding. Although the planar shape of the pedestal pad 31 is a square shape in Example 1, it is not limited to this shape. The pedestal pad 31 is made of a material having conductivity so as to supply power to one main electrode 51 in the light emitting element 5. For example, the pedestal pad 31 includes Cu foil, which is an inorganic material, Ni-Au film laminated on the Cu foil, and Au laminated on the Ni-Au film. It is formed of a laminated film of films. Cu foil which is the lowest layer of the pedestal pad 31 is a base material as a wiring or an electrode, and is small in electrical resistance and excellent in thermal conductivity. The Au film of the uppermost layer is formed in order to improve the adhesiveness with the wire 6. The Ni to Au films of the intermediate layer are formed to protect the Cu foil of the lowermost layer and to improve the bonding property between the Cu foil and the Au film of the uppermost layer. The pedestal pad 31 is an inorganic material because it is made of metal.

On the first surface 2A of the insulating substrate 2, a bonding pad 32 is provided in the area adjacent to the pedestal pad 31 and in the right side of the center in FIGS. 1 and 2. . This bonding pad 32 is electrically connected to the other main electrode 52 in the light emitting element 5 via a wire 6 here. The bonding pad 32 is slightly smaller than the planar shape of the pedestal pad 31, and is configured in a planar shape having a size in consideration of an alignment margin dimension at the time of at least wire bonding. Although the planar shape of the bonding pad 32 is a square shape in Example 1, it is not limited to this shape. Since the bonding pad 32 uses Au wire for the wire 6 here, for example, in order to improve bondability, the bonding pad 32 is comprised from the same laminated film as the said base pad 31 above. The bonding pads 32 are covered with a transparent resin 7 similarly to the pedestal pads 31.

On the first surface 2A of the insulating substrate 2, a first external terminal 33 is provided on a region away from the pedestal pad 31, and on the left side in Figs. 1 and 2. . The first external terminal 33 extends from the first surface 2A of the insulating substrate 2 to the second surface 2B via the side surface in the first embodiment, and provides the semiconductor light emitting device 1. It is used as a terminal at the time. On the first surface 2A of the insulating substrate 2, a metal wiring 34 is formed between the pedestal pad 31 and the first external terminal 33, and the metal wiring 34 ) Is electrically connected between the pedestal pad 31 and the first external terminal 33. The first external terminal 31 and the metal wiring 34 are, for example, composed of a laminated film in which the lowermost layer and the intermediate layer of the pedestal pad 31 are laminated, and the first external terminal 33, the metal wiring 34 and The pedestal pad 31 is comprised integrally.

Similarly, on the first surface 2A of the insulating substrate 2, an area away from the pedestal pad 31, the bonding pad 32, and the first external terminal 33, and on the right side in Figs. The external terminal 35 is provided. The second external terminal 35 extends from the first surface 2A of the insulating substrate 2 to the second surface 2B via the side surface in the first embodiment, and mounts the semiconductor light emitting device 1. It is used as a terminal at the time. A metal wiring 36 is formed between the bonding pad 32 and the second external terminal 35 on the first surface 2A of the insulating substrate 2, and the metal wiring 36 is a bonding pad. An electrical connection is made between the 32 and the second external terminal 35. The second external terminal 35 and the metal wiring 36 are composed of a laminated film in which the lowermost layer and the intermediate layer of the pedestal pad 31 are laminated, for example, and the second external terminal 35, the metal wiring 36 and The bonding pad 32 is comprised integrally.

The conductive adhesive material 4 electrically connects the pedestal pad 31 and the first main electrode 51 of the light emitting element 5 and mechanically bonds them together. As the conductive adhesive 4, for example, a resin adhesive including metal particles is used. Although not specifically limited to this in Example 1, Bisphenol-A epoxy resin (p-phenolic epoxy resin) and p-aminophenol epoxy resin (p-aminophenol type epoxy resin) are included, for example in the conductive adhesive 4 Conductive adhesives in which Ag particles are dispersed in a resin adhesive including a modified epoxy resin, imidazole and derivatives thereof, dicyandiamide and a dielectric thereof. Used.

The conductive adhesive 4 basically has a function of electrically and mechanically attaching the light emitting element 5 to the pedestal pad 31, but here, while covering the exposed surface of the pedestal pad 31, It is formed until it reaches the 1st surface 2A of the insulating board 2. As shown in FIG. In other words, since the conductive adhesive 4 is an organic material and the adhesiveness between the conductive adhesive 4 and the pedestal pad 31 is weak, the conductive adhesive 4 may be attached to the upper surface 31A and the side surface of the pedestal pad 31. The adhesiveness of the interface between the base pad 31 and the conductive adhesive 4 can be improved by forming over a wide range of 31S) and increasing the adhesive area. In addition, the conductive adhesive 4 is overlapped to the first surface 2A of the insulating substrate 2 as it is, and the conductive adhesive 4 and the insulating substrate 2 are bonded to each other by the organic material to thereby bond the pedestal pad 31 and the conductive adhesive. The pedestal pad 31 can be firmly fixed and supported by the conductive adhesive 4 while improving the adhesiveness of (4). In particular, since the space between the conductive adhesive 4 and the insulating substrate 2 is completely adhered around the pedestal pad 31, moisture penetrates into the interface between the pedestal pad 31 and the conductive adhesive 4. You can block the path.

The conductive adhesive 4 is formed by a coating method or a drop coating method in the manufacturing process of the semiconductor light emitting device 1, and the amount thereof is slightly increased, but can be formed in one step. . That is, the conductive adhesive 4 can be formed without increasing the number of steps, in particular, by using the coating step or the dripping application step of the conductive adhesive 4 provided in the process of the original manufacturing process.

The light emitting element 5 is a semiconductor light emitting diode in the first embodiment. Although simplified in FIG. 1, the light emitting element 5 includes the light emitting element main body 50 and the entire back surface of the light emitting element main body 50 on the pedestal pad 31 side. It is a semiconductor chip provided with one main electrode 51 provided in the main body 51 and the other main electrode 52 provided in the surface which opposes the back surface of the light emitting element main body 50. As shown in FIG. The light emitting device main body 50 includes a sapphire substrate or a silicon substrate and an InGaN-based semiconductor layer laminated on the surface thereof, for example, in the case of a blue light emitting device. . In the case of the red light emitting device, for example, the light emitting device main body 50 includes an AlN substrate or a sapphire substrate and an AlGaInP-based semiconductor layer laminated on the surface thereof. In each of the one main electrode 51 and the other main electrode 52, an Au layer is formed on at least the uppermost layer.

The light emitting element 5 is mounted on the upper surface 31A of the pedestal pad 31 with the conductive adhesive material 4 interposed therebetween. In the light emitting element 5, one main electrode 51 and the pedestal pad 31 are provided. Is electrically connected by the electrically conductive adhesive 4 and mechanically joined as mentioned above. In the light emitting element 5, the other main electrode 52 is electrically connected to the bonding pad 32 via a wire 6.

The light transmissive resin 7 covers the light emitting element 5, the pedestal pad 31, the bonding pad 32, the wire 6, and the metal wires 34 and 36, and the first surface of the insulating substrate 2. It is provided on 2A. As the light transmissive resin 7, resins such as epoxy resins, acrylic resins, silicone resins, urethane resins and the like can be used practically. The light transmissive resin 7 is molded by, for example, a transfer mold method.

[Features of Semiconductor Light Emitting Device]

In the semiconductor light emitting device 1 according to the first embodiment configured as described above, the upper surface 31A and the side surfaces 31S of the pedestal pad 31 are covered to form the insulating substrate 2 around the pedestal pad 31. Since the electroconductive adhesive material 4 which reaches | attains one surface 2A was provided, the electroconductive adhesive material 4 and the insulating substrate ( An adhesive region between the organic materials of 2) may be formed to block a path through which moisture is absorbed by the interface between the pedestal pad 31 and the conductive adhesive 4. Therefore, both conduction defects caused by peeling of the interface between the pedestal pad 31 and the conductive adhesive 4 can be prevented, and the semiconductor light emitting device 1 excellent in electrical characteristics can be realized.

In addition, in the manufacturing process of the semiconductor light emitting device 1 according to the first embodiment, the semiconductor light emitting device 1 having excellent electrical characteristics can be manufactured without adding a new process simply by expanding the coating area of the conductive adhesive 4. have.

Example 2

The second embodiment of the present invention describes an example in which the peeling of the interface between the pedestal pad 31 and the conductive adhesive 4 is further prevented in the semiconductor light emitting device 1 according to the first embodiment.

[Structure of Semiconductor Light Emitting Device]

As shown in Figs. 3 and 4, the semiconductor light emitting device 1 according to the second embodiment is a pedestal on the first surface 2A of the insulating substrate 2 in the semiconductor light emitting device 1 according to the first embodiment. An insulating substrate 2 including an upper surface 34A and a side surface 34S of the metal wiring 34 connecting the pad 31 and the first external terminal 33, and around the side surface 34S of the metal wiring 34. The conductive adhesive material 4 which reaches | attains 2A of the 1st surface of () is provided. Of course, the conductive adhesive 4 includes the top surface 31A and the side surfaces 31S of the pedestal pad 31, so that the first surface 2A of the insulating substrate 2 around the side surface 31S of the pedestal pad 31. To reach.

As described above, the metal wiring 34 is an inorganic material, and the adhesion between the metal wiring 34 and the transparent resin 7 which is an organic material is weak. By covering the metal wiring 34 with the conductive adhesive 4, the insulating substrate 2 around the side surface 34S of the metal wiring 34 and the insulating area of the metal wiring 34 are increased while increasing the adhesion area between the metal wiring 34 and the conductive adhesive 4. The conductive adhesive 4 can be firmly adhered to each other as organic materials. That is, although not directly involved in the peeling of the interface between the pedestal pad 31 and the conductive adhesive 4, the metal wiring 34 and the light may be formed by a mounting process such as soldering reflow. Since the peeling of the interface of the permeable resin 7 encourages the peeling of the interface between the pedestal pad 31 and the conductive adhesive 4 and creates a path for water to be absorbed at the interface, this phenomenon can be prevented. .

The conductive adhesive 4 covering the metal wiring 34 is the same as the conductive adhesive 4 covering the pedestal pad 31 and is formed by the same process in the manufacturing process. Although not shown in the figure, the metal wiring 36 can also be coated with the conductive adhesive 4 similarly to the metal wiring 34.

[Features of Semiconductor Light Emitting Device]

In the semiconductor light emitting device 1 according to the second embodiment configured as described above, in addition to the operational effects obtained by the semiconductor light emitting device 1 according to the first embodiment, the upper surface 34A and the side surfaces of the metal wiring 34 are provided. Since the conductive adhesive material 4 covering the 34S and reaching the first surface 2A of the insulating substrate 2 around the metal wiring 34 is provided, the metal wiring 34 and the transparent resin 7 are provided. The absorption path of moisture generated at the interface between the metal wiring 34 and the light transmissive resin 7 can be blocked while improving the adhesion of the metal. Therefore, both conduction defects caused by peeling of the interface between the pedestal pad 31 and the conductive adhesive 4 can be further prevented, and the semiconductor light emitting device 1 excellent in electrical characteristics can be realized.

In the manufacturing process of the semiconductor light emitting device 1 according to the second embodiment, the semiconductor light emitting device 1 having excellent electrical characteristics can be manufactured without adding a new process simply by expanding the coating area of the conductive adhesive 4. have.

Example 3

The third embodiment of the present invention describes an example in which the peeling of the interface between the pedestal pad 31 and the conductive adhesive 4 is further prevented in the semiconductor light emitting device 1 according to the first embodiment.

[Structure of Semiconductor Light Emitting Device]

As shown in Figs. 5 and 6, the semiconductor light emitting device 1 according to the third embodiment includes the insulating substrate 2 directly below the pedestal pad 31 in the semiconductor light emitting device 1 according to the first embodiment. First connection hole wiring (beer hole wiring) which is formed inside and is electrically connected to one end of the pedestal pad 31 and reaches from the first surface 2A to the opposite second surface 2B. A through hole wiring 37 and a second surface 2B of the insulating substrate 2 and electrically connected to the other end of the first connection hole wiring 37. It is formed inside the insulating substrate 2 directly below the first external terminal 33 and the bonding pad 32 to be connected, and one end is electrically connected to the bonding pad 32 and reaches the second surface 2B. The second connection hole wiring (via-hole wiring or through-hole wiring) 38 A second external terminal 35 is provided on the second surface 2B in an area away from the first external terminal 33 of (2) and electrically connected to the other end of the second connection hole wiring 38. Doing. 5 and 7, the semiconductor light emitting device 1 according to Embodiment 3 has a first external terminal 33 and a second external terminal on the second surface 2B of the insulating substrate 2. An insulating resist layer 8 formed between the terminals 35 is provided.

The first connection hole wiring 37 basically corresponds to the metal wiring 34 of the semiconductor light emitting device 1 according to the second embodiment, and electrically connects the pedestal pad 31 and the first external terminal 33 to each other. It is wiring. The first connection hole wiring 37 is embedded in a first connection hole (via hole or through hole) 21 formed in an area overlapping with the pedestal pad 31 of the insulating substrate 2 to form the insulating substrate 2. It is provided with the structure which is separated from the transparent resin 7 provided in the 1st surface 2A side of (), and where the adhesive part itself does not exist. Cu wiring formed using the plating method is used for the 1st connection hole wiring 37, for example.

Similarly, the second connection hole wiring 38 corresponds to the metal wiring 36 of the semiconductor light emitting device 1 according to the second embodiment, and electrically connects the bonding pad 32 and the second external terminal 35. It is wiring. The second connection hole wiring 38 is buried in a second connection hole (via hole or through hole) 22 formed in an area overlapping with the bonding pad 32 of the insulating substrate 2 to form the first substrate of the insulating substrate 2. It is provided with the structure which is separated from the transparent resin 7 provided in one surface 2A side, and the adhesive part itself does not exist. The second connection hole wiring 38 is formed of the same material using the same method as the first connection hole wiring 37.

As the resist layer 8, for example, a solder resist film can be used practically. The second surface 2B of the insulating substrate 2 is formed by forming the first connection hole wiring 37 directly under the pedestal pad 31 and the second connection hole wiring 38 directly under the bonding pad 32. Since the separation distance between the first external terminal 33 and the second external terminal 35 is close to each other, the first external terminal 33 and the first external terminal 33 are formed when the semiconductor light emitting device 1 is mounted using solder. 2 The resist layer 8 is formed in order to prevent the external terminal 35 from being short-circuited through the solder.

[Features of Semiconductor Light Emitting Device]

In the semiconductor light emitting device 1 according to the third embodiment configured as described above, in addition to the effect obtained by the semiconductor light emitting device 1 according to the first embodiment, the insulating substrate 2 directly under the pedestal pad 31. The first connection hole wiring 37 and the second connection hole wiring 38 are provided on the insulating substrate 2 directly below the bonding pad 32. The separation of the interface between the second connection hole wiring 38 and the light transmissive resin 7 can be essentially eliminated, and the absorption path of moisture generated at the interface can be eliminated essentially. Therefore, both conduction defects caused by peeling of the interface between the pedestal pad 31 and the conductive adhesive 4 can be further prevented, and the semiconductor light emitting device 1 excellent in electrical characteristics can be realized.

Example 4

The fourth embodiment of the present invention describes an example in which the peeling of the interface between the pedestal pad 31 and the conductive adhesive 4 is further prevented in the semiconductor light emitting device 1 according to the third embodiment.

[Structure of Semiconductor Light Emitting Device]

8 and 9, the semiconductor light emitting device 1 according to the fourth embodiment is the upper surface 32A of the conductive adhesive and the bonding pad 32 in the semiconductor light emitting device 1 according to the third embodiment. And a conductive adhesive 4B formed on the side surface 32S and reaching the first surface 2A of the insulating substrate 2 around the side surface 32S of the bonding pad 32. The bonding pad 32 is an inorganic material as mentioned above, and the adhesive force of the bonding pad 32 and the transparent resin 7 which is an organic material is weak. By covering the bonding pads 32 with the conductive adhesive 4B, the insulating substrate 2 around the side surface 32S of the bonding pads 32 and the bonding area of the bonding pads 32 and the conductive adhesive 4B are increased. The conductive adhesive 4B can be firmly bonded to each other as the organic materials. That is, although not directly involved in the peeling of the interface between the pedestal pad 31 and the conductive adhesive 4, for example, the peeling of the interface between the bonding pad 32 and the light transmissive resin 7 by a mounting process such as soldering reflow. This phenomenon can be prevented because it facilitates the peeling of the interface between the pedestal pad 31 and the conductive adhesive 4 so that the space between the pedestal pad 31 and the conductive adhesive 4 is generated, and the path where water is absorbed into the interface. In addition, the path absorbed at the interface between the wire 6 and the light transmissive resin 7 can also be blocked.

The conductive adhesive 4B covering the bonding pads 32 is the same as the conductive adhesive 4 covering the pedestal pad 31, and in the same process (in the coating process or in the dripping application process) in the manufacturing process. Formed.

[Features of Semiconductor Light Emitting Device]

In the semiconductor light emitting device 1 according to the fourth embodiment configured as described above, in addition to the operational effects obtained by the semiconductor light emitting device 1 according to the third embodiment, the upper surface 32A and the side surfaces of the bonding pads 32. The bonding pad 32 and the light transmissive resin 7 were provided because the conductive adhesive 4B was provided to cover the 32S and reach the first surface 2A of the insulating substrate 2 around the bonding pad 32. The absorption path of moisture generated at the interface between the bonding pad 32 and the light transmissive resin 7 can be blocked while improving the adhesion of the adhesive. Therefore, both conduction defects caused by peeling of the interface between the pedestal pad 31 and the conductive adhesive 4 can be further prevented, and the semiconductor light emitting device 1 excellent in electrical characteristics can be realized.

(Other Embodiments)

As mentioned above, although this invention was described by Example 1-Example 4, the description and drawings which form a part of this indication do not limit this invention. The present invention can be applied to various alternative embodiments, embodiments and operational techniques.

In the present invention, while improving the adhesion between the pedestal pad and the conductive adhesive, it is possible to block the path where moisture is absorbed at the interface between the pedestal pad and the conductive adhesive, thereby preventing poor conduction between the pedestal pad and the conductive adhesive. It can be widely applied to a semiconductor light emitting device having excellent characteristics.

1: semiconductor light emitting device
2: insulating substrate
2A: first surface
2B: second surface
21: first connection hole
22: second connection hole
31: pedestal pad
32: bonding pad
33: first external terminal
34, 36: metal wiring
35: second external terminal
37: first connection hole wiring
38: second connection hole wiring
4, 4B: conductive adhesive
5: light emitting element
51: one main electrode
52: the other main electrode
6: wire
7: light transmissive resin
8: resist layer

Claims (5)

An insulating substrate,
A pedestal pad provided on the first surface of the insulating substrate,
A conductive adhesive formed on an upper surface and a side surface of the pedestal pad and reaching a first surface of the insulating substrate around the side surface of the pedestal pad;
A light emitting element inserted into the upper surface of the pedestal pad and electrically and mechanically connected to one main electrode;
A light-transmitting resin is coated on the pedestal pad, the conductive adhesive, and the light emitting element and provided on the first surface of the insulating substrate.
A semiconductor light emitting device comprising: a semiconductor light emitting device.
The method of claim 1,
A first external terminal provided on the first surface of the insulating substrate and spaced apart from the pedestal pad,
A metal wiring formed on the first surface of the insulating substrate, electrically connecting the pedestal pad and the first external terminal, and coated with the light transmissive resin;
More equipped,
The conductive adhesive is formed on the upper surface and the side surface of the metal wiring, and reaches the first surface of the insulating substrate around the side surface of the metal wiring.
A semiconductor light emitting device characterized by the above-mentioned.
The method of claim 1,
A first formed in the insulating substrate immediately below the pedestal pad, the first end being electrically connected to the pedestal pad, and reaching a second surface facing the pedestal pad from the first surface; Connection hole wiring,
A first external terminal provided on the second surface of the insulating substrate and electrically connected to the other end of the first connection hole wiring;
Further comprising a semiconductor light emitting device.
The method according to any one of claims 1 to 3,
A bonding pad provided on the first surface of the insulating substrate and spaced apart from the pedestal pad and the first external terminal and coated with the light transmitting resin;
A wire electrically connecting the other main electrode of the light emitting element to the bonding pad;
On the first surface of the insulating substrate, a second external terminal provided in an area away from the pedestal pad, the first external terminal and the bonding pad, and electrically connected to the bonding pad.
More equipped,
The conductive adhesive is also formed on the top and side surfaces of the bonding pad, and reaches the first surface of the insulating substrate around the side surface of the bonding pad.
A semiconductor light emitting device characterized by the above-mentioned.
The method of claim 1,
A bonding pad provided on the first surface of the insulating substrate and spaced apart from the pedestal pad and coated with the transparent resin;
A wire for electrically connecting the other main electrode of the light emitting element to the bonding pad;
A first connection hole wiring formed in the insulating substrate immediately below the pedestal pad, the first connection hole wiring having one end electrically connected to the pedestal pad and reaching a second surface opposite from the first surface;
A first external terminal provided on the second surface of the insulating substrate and electrically connected to the other end of the first connection hole wiring;
Second connection hole wirings formed in the insulating substrate immediately below the bonding pads and electrically connected to one of the bonding pads and reaching the second surface;
A second external terminal provided on the second surface in an area away from the first external terminal of the insulating substrate and electrically connected to the other end of the second connection hole wiring;
An insulating resist layer formed between the first external terminal and the second external terminal on the second surface of the insulating substrate;
Further comprising a semiconductor light emitting device.
KR1020100073278A 2009-09-29 2010-07-29 Light emitting semiconductor device KR20110035844A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2009-224988 2009-09-29
JP2009224988A JP2011077164A (en) 2009-09-29 2009-09-29 Semiconductor light-emitting device

Publications (1)

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KR20110035844A true KR20110035844A (en) 2011-04-06

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JP6171613B2 (en) * 2013-06-21 2017-08-02 日亜化学工業株式会社 LIGHT EMITTING DEVICE MANUFACTURING METHOD AND LIGHT EMITTING DEVICE
JPWO2016132418A1 (en) 2015-02-18 2017-05-25 富士電機株式会社 Semiconductor integrated circuit
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