JP4910220B1 - LED module device and manufacturing method thereof - Google Patents
LED module device and manufacturing method thereof Download PDFInfo
- Publication number
- JP4910220B1 JP4910220B1 JP2011109222A JP2011109222A JP4910220B1 JP 4910220 B1 JP4910220 B1 JP 4910220B1 JP 2011109222 A JP2011109222 A JP 2011109222A JP 2011109222 A JP2011109222 A JP 2011109222A JP 4910220 B1 JP4910220 B1 JP 4910220B1
- Authority
- JP
- Japan
- Prior art keywords
- led
- led package
- wiring
- substrate
- module device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
Landscapes
- Led Device Packages (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
本発明は、金属プレートを加工してLEDチップのためのLEDパッケージ基板を構成したLEDモジュール装置とその製造方法に関する。 The present invention relates to an LED module device in which an LED package substrate for an LED chip is formed by processing a metal plate and a manufacturing method thereof.
LED(Light Emitting Diode:発光ダイオード)は、消費電力が低く二酸化炭素削減、高耐久性という環境と省エネを兼ね備えた素子として普及している。このようなLEDチップを搭載したパッケージは、配線基板上に装着して、大型ディスプレイ、携帯電話やデジタルビデオカメラ、PDAなどの電子機器のバックライト、道路照明や一般照明などに用いられている。LEDはそれ自体が発光素子であり、熱を放出するので、LEDパッケージは基本的に冷却のための放熱装置を含んでいる。 An LED (Light Emitting Diode) is widely used as an element that has both low power consumption, reduced carbon dioxide, high durability, and energy saving. A package on which such an LED chip is mounted is mounted on a wiring board and used for a large display, a backlight of an electronic device such as a mobile phone, a digital video camera, or a PDA, road lighting, general lighting, and the like. Since the LED itself is a light emitting element and emits heat, the LED package basically includes a heat dissipation device for cooling.
現行のLEDモジュール装置ではLEDパッケージ基板としてセラミック基板又はシリコン基板、或いは金属基板を用いているが、従来のセラミック基板(特許文献1参照)又はシリコン基板(特許文献2参照)を使用した方法では、セラミックやシリコンの熱伝導が銅などの金属よりも悪いためうまく放熱できないこと、高価なこと、加工が困難などの問題がある。 In the current LED module device, a ceramic substrate or a silicon substrate or a metal substrate is used as the LED package substrate, but in a method using a conventional ceramic substrate (see Patent Document 1) or silicon substrate (see Patent Document 2), There are problems that heat conduction of ceramics and silicon is worse than metals such as copper, so that heat cannot be radiated well, it is expensive, and processing is difficult.
図12は、従来公知の発光装置を例示する図である(特許文献3参照)。図示のように、ステンレス基板の表面に、リード電極を構成する銅箔パターンが絶縁膜を介して形成されている。このステンレス基板には貫通孔を形成して、この貫通孔に銅支持体を嵌合させる。銅支持体の先端に形成した凹所内に、LEDチップを配置する。LEDチップの各電極と基板の表面に設けられた銅箔パターンとをワイヤボンディングする。この後、シリコン樹脂等の透光性樹脂をポッティングして硬化させることにより、レンズを形成する。レンズとして機能させているシリコン樹脂は、支持体の突起部及び発光素子、更には電極にボンディングされたワイヤまでを覆うように設けられている。 FIG. 12 is a diagram illustrating a conventionally known light emitting device (see Patent Document 3). As shown in the figure, a copper foil pattern constituting a lead electrode is formed on the surface of a stainless steel substrate via an insulating film. A through hole is formed in the stainless steel substrate, and a copper support is fitted into the through hole. The LED chip is placed in a recess formed at the tip of the copper support. Each electrode of the LED chip and a copper foil pattern provided on the surface of the substrate are wire-bonded. Thereafter, a lens is formed by potting and curing a translucent resin such as a silicon resin. The silicon resin functioning as a lens is provided so as to cover the protrusions of the support, the light emitting elements, and even the wires bonded to the electrodes.
LEDチップ電極のボンディング接続部には樹脂封止が施されているが、図示の構成は、必要な箇所のみに効率的に樹脂注入することができないという問題がある。樹脂封止のためのシリコン樹脂等の透光性樹脂は、高価であるので、より限定的に樹脂注入するための構成が求められる。 Although resin sealing is applied to the bonding connection portion of the LED chip electrode, the configuration shown in the drawing has a problem that the resin cannot be efficiently injected only into a necessary portion. A translucent resin such as silicon resin for resin sealing is expensive, and therefore a structure for injecting resin more specifically is required.
図13は、特許文献4に開示の発光装置を示す側面断面図である。基板は、液晶ポリマ等の電気絶縁性材料を用い、射出成形によって絶縁性基材を形成する。そして、LEDチップの実装箇所に凹所を設ける等して3次元の立体形状の絶縁性基材を形成する。絶縁性基材の表面には金属膜を形成した後、回路部を形成する箇所以外の金属膜は除去する。基板の凹所にLEDチップを実装し、回路部とLEDチップを導電性接着材で電気的に接合する。その後にLEDチップの上部電極と回路部とを金線で接合する。その次に凹所内に透明樹脂を充填してLEDチップを封止する。最後に基板の表面に透明樹脂等から成る拡散板を取り付けて、LED照明モジュールが完成する。 FIG. 13 is a side cross-sectional view showing the light emitting device disclosed in Patent Document 4. As shown in FIG. The substrate uses an electrically insulating material such as a liquid crystal polymer, and forms an insulating substrate by injection molding. Then, a three-dimensional three-dimensional insulating base material is formed, for example, by providing a recess in the LED chip mounting location. After the metal film is formed on the surface of the insulating substrate, the metal film other than the portion where the circuit portion is formed is removed. The LED chip is mounted in the recess of the substrate, and the circuit portion and the LED chip are electrically joined with a conductive adhesive. Thereafter, the upper electrode of the LED chip and the circuit part are joined with a gold wire. Next, the recess is filled with a transparent resin to seal the LED chip. Finally, a diffusion plate made of a transparent resin or the like is attached to the surface of the substrate to complete the LED lighting module.
このように、複数個のLEDチップを凹所内に実装して基板に立体的に配置するため、基板の形状に応じて任意の配光特性が容易に得られるとともに、モジュールの薄型化が可能となる。しかし、特許文献4に開示の発光装置は、パッケージ土台となる基板を3次元に形成しておいて、後で配線を形成するものであるために、工程が複雑で、コストが高くなるという問題がある。 In this way, since a plurality of LED chips are mounted in the recess and three-dimensionally arranged on the substrate, any light distribution characteristic can be easily obtained according to the shape of the substrate, and the module can be thinned. Become. However, the light emitting device disclosed in Patent Document 4 has a problem in that the process is complicated and the cost is high because a substrate serving as a package base is three-dimensionally formed and wiring is formed later. There is.
図14は、特許文献5に開示のLED照明器具を示す図であり、(A)は上面図を示し、(B)は部分断面図を示している。図示のように、絶縁金属基板は、しぼり加工により設けたLEDチップ設置用の凹所を有する。絶縁金属基板は、金属基板層,絶縁材料層からなる電気絶縁層,導電性金属からなる電極パターンと、リードパターンとからなっている。隣接するLEDチップ同士は電極パターンを介してボンディングワイヤによって電気的に接続されている。 14A and 14B are diagrams showing an LED lighting apparatus disclosed in Patent Document 5, in which FIG. 14A shows a top view and FIG. 14B shows a partial cross-sectional view. As shown in the figure, the insulating metal substrate has a recess for installing the LED chip provided by squeezing. The insulating metal substrate includes a metal substrate layer, an electrical insulating layer made of an insulating material layer, an electrode pattern made of a conductive metal, and a lead pattern. Adjacent LED chips are electrically connected by a bonding wire via an electrode pattern.
しかし、特許文献5には、多数のLEDチップとか抵抗を接続したLED照明器具としてしか開示していないため、LEDチップ1個が不良となった場合の救済方法が難しく、実用には課題がある。また光を効率よく取り出すためには反射材の付加が不可欠であるが、特許文献5には後付けで白色材料の塗布や金属の蒸着しか開示されていない。しかしこれらは複雑でコスト高の要因となる。 However, since Patent Document 5 discloses only an LED lighting device having a large number of LED chips or resistors connected thereto, a relief method when one LED chip becomes defective is difficult, and there is a problem in practical use. . In addition, in order to extract light efficiently, addition of a reflective material is indispensable. However, Patent Document 5 discloses only application of a white material and vapor deposition of metal as a retrofit. However, these are complicated and costly factors.
不良救済のためには個別パッケージによる照明器具への搭載が簡潔な解決策であるが、特許文献5には、LEDチップ毎に切り分けて個片化した個別パッケージ、及びこの個別パッケージを配線基板及び放熱体に装着することについての開示は無い。それ故に、放熱についての検討がなされていない。一般的な絶縁金属板が使用されているためLEDチップの下面に位置する電気絶縁層は、通常80μmと厚く熱伝導性が悪いために、良好な放熱特性が得られないという問題がある。 In order to remedy defects, mounting on individual lighting fixtures using individual packages is a simple solution. However, Patent Document 5 discloses an individual package that is divided into individual pieces for each LED chip, and an individual package that is divided into a wiring board and There is no disclosure about mounting on a radiator. Therefore, no consideration has been given to heat dissipation. Since a general insulating metal plate is used, the electrical insulating layer located on the lower surface of the LED chip is usually as thick as 80 μm and has poor thermal conductivity, so that there is a problem that good heat dissipation characteristics cannot be obtained.
図15は、特許文献6に開示の照明具を示す断面図である。図示のメタルコア印刷回路基板は、メタルコアと、その上に絶縁層を介して、銅箔を回路加工した印刷回路により構成されている。絶縁層としては、ポリエーテルエーテルケトン、ポリエーテルイミド、ポリエーテルサルフォンの内のいずれかからなる100μm程度の厚さの耐熱性熱可塑性樹脂が用いられる。メタルコア印刷回路基板の窪みの底面に発光ダイオードを載置固定して各端子をそれぞれ印刷回路に接続する。メタルコア印刷回路基板の窪みには透明アクリル樹脂が充填される。このように、絶縁層として耐熱性熱可塑性樹脂を用いることは知られているが、しかし、通常、樹脂は、放熱性に優れているとは言えない。電気的絶縁性を図りつつも、発光ダイオードで発生した熱を放熱させることのできる熱伝導性の良い絶縁層が求められている。 FIG. 15 is a cross-sectional view showing a lighting fixture disclosed in Patent Document 6. As shown in FIG. The illustrated metal core printed circuit board includes a metal core and a printed circuit obtained by processing a copper foil over the insulating layer on the metal core. As the insulating layer, a heat-resistant thermoplastic resin having a thickness of about 100 μm made of any one of polyether ether ketone, polyether imide, and polyether sulfone is used. A light emitting diode is mounted and fixed on the bottom surface of the recess of the metal core printed circuit board, and each terminal is connected to the printed circuit. The hollow of the metal core printed circuit board is filled with a transparent acrylic resin. As described above, it is known to use a heat-resistant thermoplastic resin as the insulating layer, however, it cannot be said that the resin is usually excellent in heat dissipation. There is a need for an insulating layer with good thermal conductivity that can dissipate heat generated by a light emitting diode while achieving electrical insulation.
本発明は、係る問題点を解決して、金属プレートを加工して形成したLEDパッケージ基板にLEDチップを装着したLEDパッケージを、配線基板に取り付けると共に放熱体を装着して構成したLEDモジュール装置の放熱特性を改善することを目的としている。 The present invention solves such problems and is an LED module device in which an LED package in which an LED chip is attached to an LED package substrate formed by processing a metal plate is attached to a wiring substrate and a radiator is attached. The purpose is to improve the heat dissipation characteristics.
本発明は、LEDパッケージ基板として加工性及び熱伝導性の良好な金属プレートを用い、かつ、そこに装着されるLEDチップの接続配線との絶縁性を確保する絶縁層を用いつつも、その絶縁層を通しての熱伝導性を向上させることを目的としている。 The present invention uses a metal plate having good processability and thermal conductivity as an LED package substrate, and uses an insulating layer that ensures insulation from the connection wiring of the LED chip mounted thereon, while insulating the same. The aim is to improve the thermal conductivity through the layers.
また、本発明は、配線基板に接続するLEDパッケージの電気接続部を、LEDチップよりも上面に位置させる一方、LEDパッケージ基板を装着する放熱体を下方に位置させて、両者を分離することにより、LEDパッケージ基板と配線基板との電気的接続を簡易に行うと同時に、放熱と電気接続のそれぞれのコストパフォーマンスの最適化を図って、総合して安価で高効率な排熱を実現することを目的としている。 In addition, the present invention is such that the electrical connection portion of the LED package connected to the wiring board is positioned on the upper surface of the LED chip, while the heat dissipator for mounting the LED package board is positioned below to separate the two. In addition to simplifying the electrical connection between the LED package substrate and the wiring substrate, the cost performance of each of the heat dissipation and electrical connection is optimized, and overall, low-cost and high-efficiency exhaust heat is realized. It is aimed.
本発明のLEDモジュール装置は、金属プレートを加工してLEDチップのためのLEDパッケージ基板を構成し、かつ、該基板を用いたLEDパッケージを配線基板に装着して構成する。LEDパッケージ基板は、LEDチップ装着のための平板状底部と、該底部端の両側からそれぞれ立ち上がる壁部を形成するように曲げ加工した金属プレートの上に、接続配線として機能する金属箔を備え、かつ、この金属プレートと金属箔との間に、樹脂層と接着材層からなる2層の絶縁層を挟んだ積層構成とする。この壁部の上端の金属箔を一対の外部接続電極として機能させるように、平板状底部上面の金属箔にスリット開口し、かつ、この一対の外部接続電極の端部は、金属プレート端より内側に配置する。LEDパッケージ基板の平板状底部上面に、LEDチップを装着すると共に、該LEDチップの一対の電極をそれぞれ、スリットにより分離された金属箔のそれぞれに接続し、かつ透明樹脂を充填することによりLEDパッケージを構成する。このLEDパッケージを配線基板に実装して、一対の外部接続電極を配線基板上の配線と接続すると共に、LEDパッケージ基板の平板状底部裏面を放熱体に固着或いは接触させる。 In the LED module device of the present invention, an LED package substrate for an LED chip is formed by processing a metal plate, and an LED package using the substrate is mounted on a wiring substrate. The LED package substrate is provided with a metal foil functioning as a connection wiring on a flat plate-shaped bottom portion for mounting an LED chip and a metal plate bent so as to form a wall portion rising from both sides of the bottom end, And it is set as the laminated structure which pinched | interposed the two insulating layers which consist of a resin layer and an adhesive material layer between this metal plate and metal foil. A slit is opened in the metal foil on the upper surface of the flat plate-like bottom so that the metal foil at the upper end of the wall portion functions as a pair of external connection electrodes, and the ends of the pair of external connection electrodes are located inside the metal plate ends. To place. An LED package is mounted by mounting an LED chip on the upper surface of the flat bottom of the LED package substrate, connecting a pair of electrodes of the LED chip to each of the metal foils separated by slits, and filling a transparent resin. Configure. The LED package is mounted on the wiring board, and the pair of external connection electrodes are connected to the wiring on the wiring board, and the flat bottom bottom surface of the LED package board is fixed or brought into contact with the radiator.
本発明のLEDモジュール装置の製造方法は、まず金属プレートの上に、樹脂層付き金属箔からなる積層膜の樹脂層側を、接着材を用いて貼り付けて、金属プレートと金属箔との間に、樹脂層と接着材層からなる2層の絶縁層を挟んだ積層構成を形成する。積層膜を金属プレートの上に貼り付ける前、或いは貼り付けた後に、金属箔の加工を行って、スリット開口する。次に金属プレートを含む積層構成の曲げ加工を行なって、LEDチップが搭載されることになる平板状の底部と、この底部の両側に位置して底部端から折曲して立ち上がる方向に、LEDチップの発光方向と同じ側に伸びる壁部を備え、この壁部上部を外方向に折り曲げて一対の外部接続電極を形成して、LEDパッケージ基板を構成する。そしてLEDパッケージ基板の上にLEDチップを装着して、スリットにより分割されたLEDパッケージ基板の底部金属箔の一方にLEDチップ電極の一方を接続し、かつ、分割底部金属箔の他方にはLEDチップ電極の他方を接続し、透明樹脂を用いて樹脂封止して、LEDパッケージを構成する。最後にこのLEDパッケージを配線基板に実装して、一対の外部接続電極を配線基板上の配線と接続すると共に、LEDパッケージ基板の平板状底部裏面を放熱体に固着或いは接触させる。 In the manufacturing method of the LED module device of the present invention, first, a resin layer side of a laminated film made of a metal foil with a resin layer is pasted on a metal plate using an adhesive, and between the metal plate and the metal foil. In addition, a laminated structure in which two insulating layers composed of a resin layer and an adhesive layer are sandwiched is formed. Before or after attaching the laminated film on the metal plate, the metal foil is processed to open a slit. Next, the laminated structure including the metal plate is bent to form a flat bottom portion on which the LED chip is to be mounted, and the LED is positioned on both sides of the bottom portion and bent from the bottom end to rise. A wall portion extending on the same side as the light emitting direction of the chip is provided, and the upper portion of the wall portion is bent outward to form a pair of external connection electrodes to constitute an LED package substrate. Then, an LED chip is mounted on the LED package substrate, one of the LED chip electrodes is connected to one of the bottom metal foils of the LED package substrate divided by the slit, and the LED chip is connected to the other of the divided bottom metal foils The other electrode is connected and resin-sealed using a transparent resin to form an LED package. Finally, the LED package is mounted on the wiring board, the pair of external connection electrodes are connected to the wiring on the wiring board, and the flat bottom bottom surface of the LED package board is fixed or brought into contact with the radiator.
金属箔の上には、反射材として機能する金属表面処理が施されている。接着材層には熱伝導性フィラーが充填してある。LEDチップの一対の電極の接続は、ワイヤボンド接続或いはフリップチップ接続される。金属箔は2つのスリットにより3分割することができ、この3分割した中央の金属箔の上に複数個のLEDチップを搭載して、LEDチップ相互の配線及びLEDチップと金属箔との配線が、ボンディングワイヤを用いて接続される。放熱体は放熱板又は筐体であり、若しくはLEDパッケージ基板の平板状底部裏面を前記配線基板に固着してこの配線基板を放熱体として機能させる。 On the metal foil, a metal surface treatment that functions as a reflector is applied. The adhesive layer is filled with a heat conductive filler. The connection between the pair of electrodes of the LED chip is a wire bond connection or a flip chip connection. The metal foil can be divided into three parts by two slits. A plurality of LED chips are mounted on the central metal foil divided into three parts, and the wiring between the LED chips and the wiring between the LED chip and the metal foil are performed. And are connected using bonding wires. The heat radiating body is a heat radiating plate or a housing, or the flat bottom surface of the LED package substrate is fixed to the wiring board so that the wiring board functions as a heat radiating body.
底部端の両側からそれぞれ立ち上がる左右方向壁部に連結しかつそれに直交する前後方向壁部を設けて、封止樹脂を左右前後から閉じこめる機能を果たすことができる。LEDパッケージ基板は、1枚の金属プレートの上に複数個同時作成し、LEDパッケージ基板上にLEDチップを装着して樹脂封止した後、個々のLEDパッケージ或いは任意の複数個連結したLEDパッケージに切り分ける個片化を行う。 A function of confining the sealing resin from the left and right front and back can be achieved by providing a front and rear direction wall that is connected to the right and left walls rising from both sides of the bottom end. A plurality of LED package substrates are simultaneously formed on a single metal plate, and after mounting an LED chip on the LED package substrate and resin-sealing, each LED package or an arbitrary plurality of LED packages connected to each other is packaged. Divide into pieces.
本発明によれば、LEDパッケージ基板に加工性及び熱伝導性の良好な金属プレートを用い、かつ、そこに装着されるLEDチップ接続配線との絶縁性を確保する絶縁層を用いつつも、その絶縁層を通しての熱伝導性を向上させることができる。 According to the present invention, a metal plate having good processability and thermal conductivity is used for the LED package substrate, and an insulating layer for ensuring insulation with the LED chip connection wiring mounted thereon is used. Thermal conductivity through the insulating layer can be improved.
本発明のLEDパッケージ基板は金属−2層絶縁層(ポリイミド+接着材層)−金属の4層構造にすることで、絶縁用の樹脂層(ポリイミド)は非常に薄くでき、接着材料は低熱抵抗のフィラーを混ぜることによって絶縁層より熱伝導性を1桁程度改善でき、トータルの熱抵抗を低減することができる。 The LED package substrate of the present invention has a metal-two-layer insulating layer (polyimide + adhesive layer) -metal four-layer structure, so that the insulating resin layer (polyimide) can be made very thin and the adhesive material has a low thermal resistance. By mixing this filler, the thermal conductivity can be improved by an order of magnitude over the insulating layer, and the total thermal resistance can be reduced.
また、本発明によれば、LEDパッケージ基板の配線基板との電気接続部を、LEDパッケージ基板を装着する放熱体から分離することにより、LEDパッケージ基板と配線基板との電気的接続を簡易に行うと同時に、放熱と電気接続のそれぞれのコストパフォーマンスの最適化を図って、総合して安価で高効率な排熱を実現することができる。 In addition, according to the present invention, the electrical connection between the LED package substrate and the wiring board can be easily performed by separating the electrical connection portion between the LED package board and the wiring board from the heat radiating body on which the LED package board is mounted. At the same time, by optimizing the cost performance of heat dissipation and electrical connection, it is possible to achieve low-cost and high-efficiency exhaust heat overall.
また、本発明によれば、放熱性が促進されるために、従来よりも高出力とすることができる(明るくすることができる)。または、従来と同出力で長寿命化を図ることができる。また、LEDパッケージ基板形状を工夫したことにより、高価なLEDチップ封止樹脂を、必要とする箇所のみに限定的に注入することができる。 In addition, according to the present invention, since heat dissipation is promoted, the output can be higher than before (it can be brightened). Alternatively, it is possible to extend the life with the same output as the conventional one. Further, by devising the shape of the LED package substrate, it is possible to inject an expensive LED chip sealing resin in a limited manner only to the necessary portions.
また、本発明によれば、反射面形成のために複雑なプロセスを用いることなく、簡単で低コストな金属メッキのみで実現することができる。 In addition, according to the present invention, it is possible to realize by simple and low-cost metal plating without using a complicated process for forming the reflecting surface.
以下、例示に基づき本発明を説明する。図1は、本発明を具体化するLEDモジュール装置の第1の例を示す側面断面図である。例示のLEDモジュール装置は、LEDパッケージと、LEDパッケージを装着するための開口を有する配線基板と、LEDパッケージ裏面に固着された放熱板によって構成されている。配線基板の開口部へのLEDパッケージの装着は、LEDパッケージ側面と配線基板の間の隙間を接着材(耐熱性接着材)で埋め、この接着材の上で、LEDパッケージの一対の接続電極(配線基板に接続するための外部接続電極)を、配線基板上面の配線に半田付け等により接続することにより行う。LEDチップ発光面は、図中の上面側に向けられていて、配線基板に遮られること無く上面に向けて発光する。配線基板を装着したLEDパッケージの裏面は、放熱板の上に半田接続により固着される。或いは、この半田接続に代えて、高熱伝導性の接着材を用いて接着することも可能である。 Hereinafter, the present invention will be described based on examples. FIG. 1 is a side sectional view showing a first example of an LED module device embodying the present invention. The exemplary LED module device includes an LED package, a wiring board having an opening for mounting the LED package, and a heat sink fixed to the back surface of the LED package. The LED package is attached to the opening of the wiring board by filling a gap between the LED package side surface and the wiring board with an adhesive (heat-resistant adhesive), and on the adhesive, a pair of connection electrodes ( The external connection electrodes for connecting to the wiring board are connected to the wiring on the upper surface of the wiring board by soldering or the like. The LED chip light emitting surface is directed to the upper surface side in the figure, and emits light toward the upper surface without being blocked by the wiring board. The back surface of the LED package on which the wiring board is mounted is fixed on the heat sink by solder connection. Alternatively, instead of this solder connection, it is possible to bond using a highly heat conductive adhesive.
LEDパッケージは、LEDパッケージ基板の上に組み立てられる。LEDパッケージ基板は、図2を参照して後述するように、LEDチップ装着のための凹所を有するように所定形状に曲げ加工された金属プレートの上に、樹脂付き金属箔からなる積層膜を接着材を用いて貼り付けると共に、この金属箔の上には、反射材として機能する銀メッキを施すことにより構成されている。接続配線として機能する金属箔(及び銀メッキ)には、一対の接続電極(金属箔の両端側)を絶縁分離するためのスリットが開口してある。このように構成されたLEDパッケージ基板上に、LEDチップが装着され、電気的に接続配線された後、透明樹脂を充填して、LEDパッケージが構成されている。 The LED package is assembled on the LED package substrate. As will be described later with reference to FIG. 2, the LED package substrate has a laminated film made of a metal foil with a resin on a metal plate bent into a predetermined shape so as to have a recess for mounting an LED chip. Affixing using an adhesive material is performed by applying silver plating functioning as a reflective material on the metal foil. In the metal foil (and silver plating) functioning as connection wiring, a slit for insulating and separating a pair of connection electrodes (both ends of the metal foil) is opened. After the LED chip is mounted on the LED package substrate configured as described above and electrically connected and wired, a transparent resin is filled to configure the LED package.
このように、本発明のLEDパッケージ基板は、金属プレートと金属箔に挟まれた絶縁層を、樹脂層(ポリイミド膜)と接着材層との2層により構成しており(図2参照)、ポリイミド膜が電気絶縁を受け持ち、接着材が接着力を受け持つので、夫々最適化が可能となり、結果的に熱伝導特性が改善されることになる。また、個片化後の剛性が、金属箔よりも厚い金属プレートで保持できるので、信頼性が格段に向上する。透明樹脂で剛性を確保する必要が無くなり、樹脂材料の選択肢が豊富になり、結果的にコスト低減に繋がる。 Thus, the LED package substrate of the present invention comprises an insulating layer sandwiched between a metal plate and a metal foil by two layers of a resin layer (polyimide film) and an adhesive layer (see FIG. 2). Since the polyimide film is responsible for electrical insulation and the adhesive material is responsible for adhesion, each can be optimized, resulting in improved heat conduction characteristics. Moreover, since the rigidity after singulation can be held by a metal plate thicker than the metal foil, the reliability is remarkably improved. There is no need to ensure rigidity with transparent resin, and there are many choices of resin materials, resulting in cost reduction.
図2は、金型を用いたプレス加工による金属プレートの曲げ加工を説明する図である。図2(a)は、加工されるべき金属プレート(銅とかアルミのような高熱伝導性の板状金属部材)を示す側面図である。次に、(b)に示すように、この板状部材の上に、樹脂付き金属箔からなる積層膜(例えば、ポリイミド膜を貼り付けた銅箔:例えば日立化成工業のMCF-5000IR、この材料はポリイミドの厚さが僅か5μmであり、熱抵抗的には非常に有利な材料である)のポリイミド膜側を、接着材を用いて貼り付ける。樹脂層の厚さを接着材層より薄い構成にすることにより、コスト的にも放熱的にも有利となる。この接着材には、熱伝導性フィラーを充填することが望ましい。これによって、樹脂層(ポリイミド膜)と接着材層からなる2層の絶縁層を、金属プレートと金属箔で挟んだ積層構成となる。ポリイミド膜及び接着材層により、LEDチップの一対の接続電極間の絶縁を行うだけでなく、銅箔をLEDチップの接続配線として利用することができる。また、銅箔に限らず、アルミのような高熱伝導性の金属箔(金属層)を用いることができる。 FIG. 2 is a diagram for explaining bending of a metal plate by press working using a mold. FIG. 2A is a side view showing a metal plate to be processed (a plate metal member having high thermal conductivity such as copper or aluminum). Next, as shown in (b), a laminated film made of a metal foil with a resin (for example, a copper foil with a polyimide film attached thereto: for example, MCF-5000IR manufactured by Hitachi Chemical Co., Ltd., this material, as shown in FIG. The polyimide film has a thickness of only 5 μm, which is a very advantageous material in terms of heat resistance, and is attached using an adhesive. By making the thickness of the resin layer thinner than that of the adhesive layer, it is advantageous in terms of both cost and heat dissipation. This adhesive is preferably filled with a heat conductive filler. As a result, a two-layer insulating layer composed of a resin layer (polyimide film) and an adhesive layer is sandwiched between the metal plate and the metal foil. The polyimide film and the adhesive layer can not only provide insulation between the pair of connection electrodes of the LED chip, but also can utilize a copper foil as the connection wiring of the LED chip. Moreover, not only copper foil but metal foil (metal layer) with high heat conductivity like aluminum can be used.
このように、絶縁層として、樹脂層と接着材層との2層構成にすることにより、絶縁層の放熱性を大きく向上させることが可能になる。例えば、18μの銅箔と125μm前後の銅板(金属プレート)との間の絶縁層として、ポリイミド膜の1層のみを用いる場合、両方の公差を加味して、間の接着力も兼ねるために、ポリイミド膜厚は例えば20〜30μmくらい必要となる。これに対して、絶縁層をポリイミド膜と接着材層に分けた場合、ポリイミド膜厚を極限まで薄くすることができる。これは銅箔の上にポリイミドを薄く塗ることで実現できる。この結果、ポリイミド膜厚5μmが実現されている。この銅箔と薄いポリイミド膜の積層を貼るためにさらに接着材を用いる。125μm程度の比較的に厚い板材(金属プレート)に塗ることを想定しているので、接着材層の厚さは上記と同じ理由で25μm位に設定されている。単純に厚さの比で言えば、絶縁層1層の場合が25μmで、ポリイミド膜と接着材層の2層の場合が25μm+5μmとなり、絶縁層2層が不利となる。しかし絶縁層2層の場合は、5μmのポリイミド膜が絶縁耐性を受け持つので、接着材層は熱伝導を簡単に上げることができる。例えば熱伝導性フィラー(窒化アルミなどのセラミックや金属)の充填率を上げることによって簡単に実現できる。一般に熱伝導性フィラーを充填していくと電気絶縁耐性が下がってくるが、ポリイミド膜との積層によって電気絶縁耐性は気にしなくて良い。この結果絶縁層2層の場合は、例えばトータルの熱伝導率をほぼ同じ厚さの1層の接着材に比べ3倍程向上させることが可能となる。 As described above, by using a two-layer structure of the resin layer and the adhesive layer as the insulating layer, the heat dissipation of the insulating layer can be greatly improved. For example, when only one layer of polyimide film is used as an insulating layer between an 18μ copper foil and a copper plate (metal plate) of around 125μm, polyimide can be used to take into account both tolerances and also serve as an adhesive force between them. For example, a film thickness of about 20 to 30 μm is required. On the other hand, when the insulating layer is divided into a polyimide film and an adhesive layer, the polyimide film thickness can be made as thin as possible. This can be realized by thinly applying polyimide on the copper foil. As a result, a polyimide film thickness of 5 μm is realized. An adhesive is further used to attach a laminate of this copper foil and a thin polyimide film. Since it is assumed that it is applied to a relatively thick plate (metal plate) of about 125 μm, the thickness of the adhesive layer is set to about 25 μm for the same reason as described above. Simply speaking, the ratio of thickness is 25 μm in the case of one insulating layer, and 25 μm + 5 μm in the case of two layers of a polyimide film and an adhesive layer, which is disadvantageous for two insulating layers. However, in the case of two insulating layers, the 5 μm polyimide film has insulation resistance, so the adhesive layer can easily increase heat conduction. For example, it can be easily realized by increasing the filling rate of a thermally conductive filler (ceramic or metal such as aluminum nitride). In general, as the thermal conductive filler is filled, the electrical insulation resistance decreases, but the electrical insulation resistance does not have to be considered by the lamination with the polyimide film. As a result, in the case of two insulating layers, for example, the total thermal conductivity can be improved by about three times compared to a single-layer adhesive having substantially the same thickness.
また、樹脂層があることで、上面の銅箔のエッチング加工が容易になる。エッチング時に接着材層がエッチ液に侵食される心配が無い。但し、接着材層だけで熱伝導を向上させると絶縁耐性を犠牲にし易く、接着材層単層で熱伝導と絶縁耐性を両立させるのは難しい。 In addition, the presence of the resin layer facilitates etching of the upper surface copper foil. There is no concern that the adhesive layer is eroded by the etchant during etching. However, if the heat conduction is improved only by the adhesive layer, the insulation resistance is easily sacrificed, and it is difficult to achieve both the heat conduction and the insulation resistance by a single adhesive layer.
次に、図2(c)に示すように、貼り付けた金属箔の加工を行って、スリット開口及び銅箔除去部を形成する。例えば、この加工のために、ホトリソグラフィ技術を用いる。金属層(銅箔)の上にレジストを塗布し、パターンを露光、現像してさらにエッチングを行い、レジストを除去して、スリット開口及び銅箔除去部を完成させる。ここでは、積層膜を金属プレートの上に貼り付けた状態で、積層膜の金属箔にスリット開口する場合を例示したが、積層膜単独の状態でエッチング加工により金属箔にスリット開口し、このスリット加工した積層膜を金属プレートの上に接着材を用いて貼り付けることもできる。或いは、積層膜単独の状態で、打ち抜き加工によりスリット開口をすることもできる。但し、この場合、スリットは、金属箔だけでなくポリイミド層に対しても開口されることになる。 Next, as shown in FIG. 2C, the attached metal foil is processed to form slit openings and copper foil removal portions. For example, photolithography technology is used for this processing. A resist is applied on the metal layer (copper foil), the pattern is exposed and developed, and etching is further performed to remove the resist, thereby completing the slit opening and the copper foil removing portion. Here, the case where a slit is opened in the metal foil of the laminated film with the laminated film attached on the metal plate is illustrated, but the slit is opened in the metal foil by etching in the state of the laminated film alone. The processed laminated film can also be attached on the metal plate using an adhesive. Alternatively, the slit opening can be made by punching in the state of the laminated film alone. However, in this case, the slit is opened not only to the metal foil but also to the polyimide layer.
次に、(d)に示すように、樹脂付き金属箔を貼り付けた金属プレートの曲げ加工を行う。この曲げ加工は、LEDチップを搭載するための凹所、及び上部を外方向に折り曲げた接続電極を形成するように、金型を用いたプレス加工によって行う。後述するように、接続電極を配線基板に対して半田付けした際に、半田が接続電極と金属プレートを電気的にショートさせるのを防ぐために、接続電極先端側を部分的に除去した銅箔除去部を設ける。即ち、接続電極端部は、金属プレート端より内側に配置されることになる。電極端と金属プレート端の半田ショートを防止するため、工程を追加すること無く、図2(c)に示すスリット開口工程によって銅箔除去部を設けることができる。 Next, as shown in (d), the metal plate to which the metal foil with resin is attached is bent. This bending process is performed by pressing using a mold so as to form a recess for mounting the LED chip and a connection electrode with the upper part bent outward. As will be described later, when the connection electrode is soldered to the wiring substrate, the copper foil is removed by partially removing the connection electrode tip in order to prevent the solder from electrically shorting the connection electrode and the metal plate. Provide a part. That is, the connection electrode end is disposed inside the metal plate end. In order to prevent a solder short between the electrode end and the metal plate end, the copper foil removing portion can be provided by a slit opening step shown in FIG.
次に、(e)に示すように、LEDチップからの発光の反射材として機能する金属(例えば、銀)メッキ(金属表面処理)を、金属箔の上面の全てに施す。メッキ処理のためのメッキ電極として金属箔を用いることにより、スリットを除いて、金属箔の上面のみにメッキすることが可能になる。または、金属表面処理の必要な箇所に銀インクを用いてインクジェット塗布し、焼成することによって光沢面(反射材)を形成する。 Next, as shown in (e), metal (for example, silver) plating (metal surface treatment) that functions as a reflective material for light emission from the LED chip is applied to the entire upper surface of the metal foil. By using a metal foil as a plating electrode for the plating process, it is possible to plate only on the upper surface of the metal foil except for the slit. Alternatively, a glossy surface (reflecting material) is formed by applying an ink jet to a portion requiring metal surface treatment using silver ink and baking.
図3は、第1のLEDパッケージ基板を示す図であり、(A)は、LEDパッケージ基板を複数個連結した状態で示す図であり、(B)は、その1個のLEDパッケージ基板のみを取り出して示す図であり、(C)は、(B)に示すA−A’ラインで切断した断面図であり、(D)は、(B)に示すB−B’ラインで切断した断面図である。図示の例において、5×14個のLEDパッケージ基板を、1枚の金属プレートの上に同時作成するものとして例示している。後の工程で、LEDパッケージ基板上にLEDチップを装着して樹脂封止した後、個々のパッケージ或いは任意の複数個連結したパッケージに切り分ける個片化が行われる。個片化は、図3(A)に示す分割ラインに沿って行われるが、複数個のLEDパッケージを連結するための連結部を作成することによって、電気的に直列に接続されると同時に、連結構成LEDパッケージに柔軟性を付与して、凸面形状或いは凹面形状などの任意の外表面形状を有するヒートシンク或いは筐体の上に装着することができる(後述する図11参照)。 FIG. 3 is a view showing a first LED package substrate, (A) is a view showing a state in which a plurality of LED package substrates are connected, and (B) is a view showing only one LED package substrate. It is a figure taken out and shown, (C) is a sectional view cut by AA 'line shown in (B), (D) is a sectional view cut by BB' line shown in (B) It is. In the illustrated example, 5 × 14 LED package substrates are illustrated as being simultaneously formed on a single metal plate. In a later step, after mounting the LED chip on the LED package substrate and resin-sealing, individualization is performed by dividing into individual packages or arbitrary plural connected packages. The singulation is performed along the dividing line shown in FIG. 3 (A), but by creating a connecting part for connecting a plurality of LED packages, they are electrically connected in series, The connected LED package can be provided with flexibility, and can be mounted on a heat sink or housing having an arbitrary outer surface shape such as a convex shape or a concave shape (see FIG. 11 described later).
図示のLEDパッケージ基板は、LEDチップを搭載するための凹所が形成されている。この凹所両側には左右壁部が設けられ、また、この左右壁部に連結しかつ直交する前後壁部が設けられて、封止樹脂を左右前後から閉じこめる機能を果たしている。左右壁部上面の金属箔(及びその上の銀メッキ)は、一対の接続電極として機能する。また、一対の接続電極を電気的に分離するためのスリットが、金属箔(及びその上の銀メッキ)に形成されている。スリットにより分割されたいずれか一方の金属箔の上に、後述のようにLEDチップが装着されることになる。 In the illustrated LED package substrate, a recess for mounting the LED chip is formed. Left and right wall portions are provided on both sides of the recess, and front and rear wall portions connected to and orthogonal to the left and right wall portions are provided to perform a function of confining the sealing resin from the left and right front and rear. The metal foils on the upper surfaces of the left and right wall parts (and silver plating thereon) function as a pair of connection electrodes. In addition, slits for electrically separating the pair of connection electrodes are formed in the metal foil (and silver plating thereon). An LED chip is mounted on one of the metal foils divided by the slit as described later.
このように、LEDパッケージ基板は、LEDチップが搭載されることになる平板状の底部と、この底部の左右前後に位置して底部端から折曲して立ち上がる方向に、LEDチップの発光方向と同じ側に伸びる左右及び前後の壁部を備えている。この一対の左右の壁部先端面の金属箔が、接続電極として機能する。底部端から左右前後の壁部が立ち上がる方向は、必ずしも直交する必要はなく、接続電極が平板状の底部より上方に位置できるように、例えば、斜め上方に直線的に、或いは湾曲させて立ち上がらせても良い。図示の例では、平板状の底部及び前後の壁部の金属箔をスリットにより2分割することにより、一対の接続電極を互いに分離している。後述するように(図5参照)、2分割した底部金属箔の一方の上にLEDチップを装着して一方のワイヤボンド接続をする一方、2分割底部金属箔の他方には他方のワイヤボンド接続をする。 In this way, the LED package substrate has a flat bottom portion on which the LED chip is to be mounted, a light emitting direction of the LED chip in a direction where the bottom portion is located at the left and right front and back, and is bent from the bottom end. It has left and right and front and rear wall portions extending on the same side. The metal foils on the pair of left and right wall tip surfaces function as connection electrodes. The directions in which the left and right front and rear walls rise from the bottom end do not necessarily have to be orthogonal to each other. For example, the connection electrode can be raised linearly or curved upward at an angle so that the connection electrode can be positioned above the flat bottom. May be. In the example shown in the drawing, the pair of connection electrodes are separated from each other by dividing the metal foil of the flat bottom portion and the front and rear wall portions into two by slits. As will be described later (see FIG. 5), an LED chip is mounted on one of the two divided bottom metal foils to make one wire bond connection, while the other one of the two divided bottom metal foils has the other wire bond connection. do.
図4は、図3とは異なる第2のLEDパッケージ基板を示す図であり、(A)は、LEDパッケージ基板を複数個連結した状態で示す図であり、(B)は、その1個のLEDパッケージ基板のみを取り出して示す図であり、(C)は、(B)に示すA−A’ラインで切断した断面図であり、(D)は、(B)に示すB−B’ラインで切断した断面図である。図示の例においても、図3と同様に、5×14個のLEDパッケージ基板を、1枚の金属プレートの上に同時作成するものとして例示している。図4に示す第2のLEDパッケージ基板において、凹所の左右側のみに壁部を設けている点で、左右だけでなく前後に壁部を設けた図3とは相違している。後の工程で、LEDパッケージ基板上にLEDチップを装着した後、金型内で樹脂封止する際に、図中の左右方向に流れる樹脂は左右壁部によって規制される一方、前後方向に流れる樹脂は、パッケージ基板のエッジ部処理、例えばエッジ部のみ壁部を設けることによって規制される。その他の構成についての説明は、図3と同じであるので省略する。 FIG. 4 is a diagram showing a second LED package substrate different from FIG. 3, (A) is a diagram showing a state in which a plurality of LED package substrates are connected, and (B) is a diagram of one of them. It is a figure which takes out and shows only an LED package board | substrate, (C) is sectional drawing cut | disconnected by the AA 'line shown to (B), (D) is a BB' line shown to (B). It is sectional drawing cut | disconnected by. In the illustrated example, as in FIG. 3, 5 × 14 LED package substrates are illustrated as being simultaneously formed on one metal plate. The second LED package substrate shown in FIG. 4 is different from FIG. 3 in which walls are provided not only on the left and right but also on the front and back, in that walls are provided only on the left and right sides of the recess. In a later step, after mounting the LED chip on the LED package substrate, when the resin is sealed in the mold, the resin flowing in the left-right direction in the figure is regulated by the left and right walls, while flowing in the front-rear direction. The resin is regulated by edge processing of the package substrate, for example, by providing a wall only at the edge. The description of other configurations is the same as in FIG.
図5は、LEDパッケージ組立ての第1の例を示す図である。(a)に示すLEDパッケージ基板は、図3に示した第1のLEDパッケージ基板或いは図4に示した第2のLEDパッケージ基板と同一のものである。このLEDパッケージ基板の平板状底部おもて面の銀メッキした金属箔の上に、(b)に示すように、LEDチップを、接着材を用いて固定する。このLEDチップは、LED発光面を上面に有している。なお、LEDチップは、1個のみを例示したが、複数チップを搭載することもできる(図7参照)。 FIG. 5 is a diagram showing a first example of LED package assembly. The LED package substrate shown in (a) is the same as the first LED package substrate shown in FIG. 3 or the second LED package substrate shown in FIG. The LED chip is fixed on the silver-plated metal foil on the flat bottom surface of the LED package substrate with an adhesive as shown in FIG. This LED chip has an LED light emitting surface on the upper surface. Although only one LED chip is illustrated, a plurality of chips can be mounted (see FIG. 7).
次に、(c)に示すように、LEDチップと、接続配線として機能する金属箔との間でワイヤボンド接続が行われる。LEDチップをLEDパッケージ基板の底部金属箔の上に固着した後、2分割金属箔のそれぞれと、LEDチップの一対の接続電極間を、ボンディングワイヤによりワイヤボンド接続する。上述したように、金属箔の上には、反射材として銀メッキが形成されているので、この銀メッキをワイヤボンディング性向上にも機能させることができる。 Next, as shown in (c), wire bond connection is performed between the LED chip and the metal foil functioning as connection wiring. After fixing the LED chip on the bottom metal foil of the LED package substrate, each of the two-divided metal foil and a pair of connection electrodes of the LED chip are wire-bonded with a bonding wire. As described above, since silver plating is formed as a reflective material on the metal foil, this silver plating can also function for improving wire bonding.
次に、(d)に示す樹脂封止において、透明樹脂(材質は、例えばエポキシ系やシリコーン系)を用いて樹脂封止(トランスファーモールドあるいはポッティング)する。この透明樹脂には、蛍光体を混合しても良い。一般的に白色LEDの場合は、青色発光LEDチップを用いてLEDチップ上に黄色の蛍光体を配置し、この蛍光体が青色を受けて白く光っている。通常、この蛍光体は透明樹脂に混入されている場合が多い。樹脂封止は、連結状態のパッケージを金型内に配置して行われる。或いは樹脂封止はディスペンサーやスクリーン印刷で行なっても良い。封止樹脂の高さは、接続電極として機能する壁部先端面と同平面まで注入する。この後、個々のパッケージに、或いは複数個連結した状態のパッケージに個片化することによって、LEDパッケージが完成する。 Next, in the resin sealing shown in (d), resin sealing (transfer molding or potting) is performed using a transparent resin (the material is, for example, epoxy or silicone). The transparent resin may be mixed with a phosphor. In general, in the case of a white LED, a yellow phosphor is disposed on an LED chip using a blue light emitting LED chip, and this phosphor receives blue and glows white. Usually, this phosphor is often mixed in a transparent resin. Resin sealing is performed by placing the connected package in a mold. Alternatively, resin sealing may be performed by a dispenser or screen printing. The height of the sealing resin is injected up to the same plane as the front end surface of the wall functioning as a connection electrode. Thereafter, the LED package is completed by dividing into individual packages or a plurality of connected packages.
図6は、LEDパッケージ組立ての第2の例を示す図である。(a)に示す第3のLEDパッケージ基板は、銀メッキした金属箔が、フリップチップ実装用の配線用パターン形成されている点で、上述した第1或いは第2のLEDパッケージ基板とは異なっている。このフリップチップ実装用配線パターンにLEDチップがフリップチップ搭載される。次に、(c)に示すように、図5を参照して説明したのと同様な樹脂封止が行われる。 FIG. 6 is a diagram showing a second example of LED package assembly. The third LED package substrate shown in (a) is different from the above-described first or second LED package substrate in that a silver-plated metal foil is formed with a wiring pattern for flip chip mounting. Yes. An LED chip is flip-chip mounted on the flip chip mounting wiring pattern. Next, as shown in (c), the same resin sealing as described with reference to FIG. 5 is performed.
図7は、LEDパッケージ組立ての第3の例を示す図であり、(A)は完成したLEDパッケージの上面図を示し、(B)は側面断面図を示している。例示のLEDパッケージ基板は、銀メッキした金属箔が、左右両側にある2つのスリットにより3分割されている。この3分割した中央の金属箔の上に複数個(6×6個として例示)のLEDチップが搭載されて、LEDチップ相互の配線及びLEDチップと金属箔との配線が、ボンディングワイヤを用いて接続されている。この場合のように複数チップが一つのパッケージに搭載される場合は、チップ状態で良品であることが十分に検査されていることが前提である。 7A and 7B are diagrams showing a third example of LED package assembly, in which FIG. 7A shows a top view of a completed LED package, and FIG. 7B shows a side sectional view. In the illustrated LED package substrate, a silver-plated metal foil is divided into three by two slits on the left and right sides. A plurality of (6 × 6 exemplified) LED chips are mounted on the central metal foil divided into three, and the wiring between the LED chips and the wiring between the LED chip and the metal foil are bonded using bonding wires. It is connected. When a plurality of chips are mounted in one package as in this case, it is premised that the chips are sufficiently inspected to be non-defective products.
図8は、本発明を具体化するLEDモジュール装置の第1の例(図1参照)の組立を説明する図である。最初に、(a)に示すように、LEDパッケージ(図5,6,7参照)と、このLEDパッケージに相当する開口部を有する配線基板(例えば、1層ガラスエポキシ基板)を用意して、この配線基板の開口部にLEDパッケージを配置して、このLEDパッケージ側面と配線基板の間の隙間を接着材(耐熱性及び絶縁性の接着材)で埋める。次に、(b)に示すように、この接着材の上で、LEDパッケージの一対の接続電極を、配線基板上面の配線に半田付け、或いはインクジェットによる銅や銀等により接続する。LEDチップ発光面は、図中の上面側に向けられていて、LEDパッケージ基板に遮られること無く上面に向けて発光する。 FIG. 8 is a view for explaining the assembly of the first example (see FIG. 1) of the LED module device embodying the present invention. First, as shown in (a), an LED package (see FIGS. 5, 6, and 7) and a wiring board (for example, a single-layer glass epoxy board) having an opening corresponding to the LED package are prepared. An LED package is disposed in the opening of the wiring board, and a gap between the side surface of the LED package and the wiring board is filled with an adhesive (heat-resistant and insulating adhesive). Next, as shown in (b), on this adhesive, a pair of connection electrodes of the LED package is soldered to the wiring on the upper surface of the wiring board or connected by copper, silver, or the like by inkjet. The LED chip light emitting surface is directed to the upper surface side in the figure, and emits light toward the upper surface without being blocked by the LED package substrate.
次に、(c)に示すように、配線基板を装着したLEDパッケージを、放熱板(例えば、銅あるいはアルミ板)の上に半田接続する。或いは、この半田接続に代えて、高熱伝導性の接着材を用いて接着することも可能である。また、放熱板に代えて、そのまま筐体へ固着することも可能である。 Next, as shown in (c), the LED package with the wiring board mounted thereon is soldered on a heat sink (for example, a copper or aluminum plate). Alternatively, instead of this solder connection, it is possible to bond using a highly heat conductive adhesive. Further, instead of the heat radiating plate, it can be directly fixed to the housing.
図9は、本発明を具体化するLEDモジュール装置の第2の例の組立を説明する図である。この第2の例は、放熱体として配線基板を利用する。このために、例示の配線基板は、LEDパッケージを装着する開口部を有しておらず、LEDパッケージが配線基板上面に装着される点で、図8に示した第1の例とは相違している。LEDモジュール装置の第2の例の組立は、最初に、(a)に示すように、熱伝導性が良い配線基板(例えば、上述した窒化アルミのような熱伝導性フィラーをより多く充填した1層ガラスエポキシ基板)上の所定位置に、LEDパッケージを接着材(耐熱性及び絶縁性の接着材)を用いて固着する。或いは、配線基板上に孤立した配線パターンを設ければ、半田接続によって固着することも可能である。次に、(b)に示すように、LEDパッケージ側面と配線基板との間を絶縁性の接着材で埋める。次に、(c)に示すように、この絶縁性接着材の上で、LEDパッケージの一対の接続電極を、配線基板上面の配線に半田付け、或いはインクジェットによる銅や銀等により接続する。LEDチップから発生した熱は、LEDパッケージ基板から配線基板を介して放熱される。 FIG. 9 is a diagram illustrating the assembly of the second example of the LED module device embodying the present invention. This second example uses a wiring board as a heat radiator. For this reason, the exemplary wiring board does not have an opening for mounting the LED package, and is different from the first example shown in FIG. 8 in that the LED package is mounted on the upper surface of the wiring board. ing. In the assembly of the second example of the LED module device, first, as shown in (a), a wiring board having a good thermal conductivity (for example, 1 more filled with a thermal conductive filler such as the above-mentioned aluminum nitride) The LED package is fixed to a predetermined position on the layer glass epoxy substrate) using an adhesive (heat-resistant and insulating adhesive). Alternatively, if an isolated wiring pattern is provided on the wiring board, it can be fixed by soldering. Next, as shown in (b), the space between the LED package side surface and the wiring board is filled with an insulating adhesive. Next, as shown in (c), on this insulating adhesive, a pair of connection electrodes of the LED package are soldered to the wiring on the upper surface of the wiring board or connected by copper, silver, or the like by inkjet. Heat generated from the LED chip is radiated from the LED package substrate through the wiring substrate.
図10は、本発明を具体化するLEDモジュール装置の第3の例を説明する図であり、(A)はその断面図を示し、(B)は配線基板に3個のLEDパッケージを装着した状態で示す上面図である。上述したLEDパッケージ(図5,6,7参照)と、このLEDパッケージに相当する開口部を有する配線基板を用意する。配線基板は、例えば、裏面に配線層を有する1層ガラスエポキシ基板とすることができるが、光放射のために配線基板は出来るだけ薄い方が望ましく、ポリイミドのようなテープ基板でも良い。配線基板を開口すると基板の厚さ分が壁となり、そこに当る光がロスとなる。このためこの壁となる厚さが薄い程有利になる。またこのロスを小さくするために、図10(B)に示す配線基板は、開口面積を大きくしておいて、LEDパッケージとの接続部を爪状に小さく構成している。配線基板のおもて面には、反射効果を得るために白色レジストを塗布する。この配線基板の開口部にLEDパッケージを配置して、このLEDパッケージ上面の接続電極を、配線基板裏面の配線に半田付けする。LEDチップ発光面は、図中の上面側に向けられていて、LEDパッケージ基板に遮られること無く上面に向けて発光する。 FIG. 10 is a diagram for explaining a third example of the LED module device embodying the present invention, where (A) shows a sectional view thereof, and (B) shows three LED packages mounted on a wiring board. It is a top view shown in a state. An LED package described above (see FIGS. 5, 6, and 7) and a wiring board having an opening corresponding to the LED package are prepared. The wiring board can be, for example, a single-layer glass epoxy board having a wiring layer on the back surface, but it is desirable that the wiring board be as thin as possible for light radiation, and a tape board such as polyimide may be used. When the wiring board is opened, the thickness of the board becomes a wall, and light hitting it becomes a loss. Therefore, the thinner the wall, the more advantageous. In order to reduce this loss, the wiring board shown in FIG. 10B has a large opening area and a small connecting portion with the LED package. A white resist is applied to the front surface of the wiring board to obtain a reflection effect. The LED package is disposed in the opening of the wiring board, and the connection electrode on the upper surface of the LED package is soldered to the wiring on the back surface of the wiring board. The LED chip light emitting surface is directed to the upper surface side in the figure, and emits light toward the upper surface without being blocked by the LED package substrate.
配線基板を装着したLEDパッケージは、放熱板(例えば、銅あるいはアルミ板)の上に半田接続する。或いは、この半田接続に代えて、高熱伝導性の接着材を用いて接着することも可能である。また、放熱板に代えて、そのまま筐体へ固着することも可能である。 The LED package on which the wiring board is mounted is soldered on a heat radiating plate (for example, copper or aluminum plate). Alternatively, instead of this solder connection, it is possible to bond using a highly heat conductive adhesive. Further, instead of the heat radiating plate, it can be directly fixed to the housing.
図11は、本発明を具体化するLEDモジュール装置の第4の例を説明する図であり、(A)は連結構成LEDパッケージの上面図を示し、(B)はこの連結構成LEDパッケージを配線基板に装着した状態のA−A’ラインで切断した断面図を示している。連結構成LEDパッケージは、複数個(4個として例示)のLEDパッケージを、連結部で連結したものである。連結部は、絞り加工時の歪みを逃すために、連結部の両側に部分切除部が形成されている。連結部で連結することによって、電気的に直列に接続されると同時に、連結構成LEDパッケージに柔軟性を付与して、凸面形状或いは凹面形状などの任意の外表面形状を有するヒートシンク或いは筐体のような放熱体上に装着することができる。連結構成LEDパッケージの最両端側には、連結部はなく、ここに接続電極が形成されることになる。そして、この連結構成LEDパッケージが配線基板に実装される。配線基板上への実装は、図8を参照して上述したように、LEDパッケージ側面と配線基板との間を絶縁性の接着材で埋め、次に、この絶縁性接着材の上で、連結構成LEDパッケージの一対の接続電極を、配線基板上面の配線に半田付け、或いはインクジェットによる銅や銀等により接続する。 11A and 11B are views for explaining a fourth example of the LED module device embodying the present invention. FIG. 11A is a top view of a connected configuration LED package, and FIG. 11B is a wiring diagram of the connected configuration LED package. A sectional view taken along line AA ′ in a state of being mounted on a substrate is shown. The connected configuration LED package is obtained by connecting a plurality of LED packages (illustrated as four) at a connecting portion. In the connecting portion, partial cut portions are formed on both sides of the connecting portion in order to escape distortion during drawing. By connecting at the connecting portion, it is electrically connected in series, and at the same time, it gives flexibility to the connected LED package, and the heat sink or housing having an arbitrary outer surface shape such as a convex shape or a concave shape. It can be mounted on such a radiator. There is no connecting portion on the most end side of the connected LED package, and connection electrodes are formed here. And this connection structure LED package is mounted in a wiring board. As described above with reference to FIG. 8, the mounting on the wiring board is performed by filling the space between the LED package side surface and the wiring board with an insulating adhesive, and then connecting the insulating adhesive on the insulating adhesive. A pair of connection electrodes of the configuration LED package are soldered to the wiring on the upper surface of the wiring board or connected by copper, silver, or the like by inkjet.
以上、本開示にて幾つかの実施の形態を単に例示として詳細に説明したが、本発明の新規な教示及び有利な効果から実質的に逸脱せずに、その実施の形態には多くの改変例が可能である。
Although several embodiments have been described in detail in the present disclosure by way of example only, many modifications may be made to the embodiments without substantially departing from the novel teachings and advantages of the present invention. Examples are possible.
Claims (17)
前記LEDパッケージ基板は、LEDチップ装着のための平板状底部と、該底部端の両側からそれぞれ立ち上がる壁部と、該壁部上部を外方向に折り曲げた接続電極部を一体に形成するように曲げ加工した金属プレートの上に、反射材として機能する金属表面処理を施した金属箔を備え、かつ、この金属プレートと金属箔との間に、樹脂層と接着材層からなる2層の絶縁層を挟んだ積層構成とし、
前記壁部上部を外方向に折り曲げた接続電極部の上端の金属箔を一対の外部接続電極として機能させるように、前記平板状底部上面の金属箔にスリット開口し、かつ、前記一対の外部接続電極の端部は、金属プレート端より内側に配置し、
前記LEDパッケージ基板の平板状底部上面に、LEDチップを装着すると共に、該LEDチップの一対の電極をそれぞれ、前記スリットにより分離された金属箔のそれぞれに接続し、かつ透明樹脂を前記壁部に挟まれた凹所に充填することによりLEDパッケージを構成し、
前記LEDパッケージの平板状底部裏面を放熱体に固着或いは接触させると共に、該放熱体との間に間隔を開けて配置した配線基板の開口部に前記LEDパッケージを実装して、前記金属プレート端より内側に配置した前記一対の外部接続電極を配線基板の配線と接続したことから成るLEDモジュール装置。 In an LED module device in which an LED package substrate for an LED chip is configured by bending a metal plate made of a plate material having a predetermined plate thickness , and the LED package using the substrate is mounted on a wiring substrate.
The LED package substrate is bent so as to integrally form a flat bottom portion for mounting an LED chip, a wall portion rising from both sides of the bottom end, and a connection electrode portion where the upper portion of the wall portion is bent outward. Two insulating layers comprising a resin layer and an adhesive layer between the metal plate and the metal foil provided with a metal foil that has been subjected to a metal surface treatment that functions as a reflector on the processed metal plate With a laminated structure
A slit is opened in the metal foil on the upper surface of the flat plate-like bottom so that the metal foil at the upper end of the connection electrode part where the upper part of the wall part is bent outwards functions as a pair of external connection electrodes, and the pair of external connections The end of the electrode is placed inside the end of the metal plate,
An LED chip is mounted on the upper surface of the flat bottom of the LED package substrate, a pair of electrodes of the LED chip are connected to each of the metal foils separated by the slit, and a transparent resin is attached to the wall portion. Configure the LED package by filling the sandwiched recess,
Together to fix or contacting the flat bottom rear surface of the front Symbol LED package to the heat radiating body, and mounting the LED package on the opening of the circuit board which is spaced between the heat radiating body, the metal plate end An LED module device comprising the pair of external connection electrodes arranged on the inner side and connected to wiring of a wiring board .
金属プレートの上に、樹脂層付き金属箔からなる積層膜の樹脂層側を、接着材を用いて貼り付けて、前記金属プレートと前記金属箔との間に、前記樹脂層と接着材層からなる2層の絶縁層を挟んだ積層構成を形成し、
前記積層膜を前記金属プレートの上に貼り付ける前、或いは貼り付けた後に、前記金属箔の加工を行って、スリット開口し、
前記金属プレートを含む前記積層構成の曲げ加工を行なって、LEDチップが搭載されることになる平板状の底部と、この底部の両側に位置して底部端から折曲して立ち上がる方向に、LEDチップの発光方向と同じ側に伸びる壁部を備え、この壁部上部を外方向に折り曲げて一対の外部接続電極を形成して、LEDパッケージ基板を構成し、
前記LEDパッケージ基板の上にLEDチップを装着して、前記スリットにより分割された前記LEDパッケージ基板の底部金属箔の一方に、LEDチップ電極の一方を接続し、かつ、分割底部金属箔の他方にはLEDチップ電極の他方を接続し、
透明樹脂を用いて樹脂封止して、LEDパッケージを構成し、
前記LEDパッケージの平板状底部裏面を放熱体に固着或いは接触させると共に、該放熱体との間に間隔を開けて配置した配線基板の開口部に前記LEDパッケージを実装して、前記一対の外部接続電極を配線基板の配線と接続することから成るLEDモジュール装置の製造方法。 In a manufacturing method of an LED module device in which an LED package substrate for an LED chip is configured by bending a metal plate made of a plate material having a predetermined thickness , and the LED package using the substrate is mounted on a wiring substrate ,
On the metal plate, the resin layer side of the laminated film made of a metal foil with a resin layer is attached using an adhesive, and the resin layer and the adhesive layer are between the metal plate and the metal foil. Forming a laminated structure sandwiching two insulating layers,
Before or after pasting the laminated film on the metal plate, processing the metal foil, opening a slit,
The laminated structure including the metal plate is bent to form a flat bottom on which the LED chip is to be mounted, and the LED is positioned on both sides of the bottom to bend and rise from the bottom end. A wall portion extending on the same side as the light emitting direction of the chip is provided, and the upper portion of the wall portion is bent outward to form a pair of external connection electrodes to constitute an LED package substrate,
An LED chip is mounted on the LED package substrate, one of the LED chip electrodes is connected to one of the bottom metal foils of the LED package substrate divided by the slit, and the other of the divided bottom metal foils Connects the other of the LED chip electrodes,
Resin-sealing with a transparent resin to form an LED package,
Together to fix or contacting the flat bottom rear surface of the front Symbol LED package to the heat radiating body, and mounting the LED package on the opening of the circuit board which is spaced between the heat radiating member, said pair of external A method of manufacturing an LED module device, comprising connecting a connection electrode to a wiring of a wiring board .
The manufacturing method of the LED module apparatus of Claim 11 which provides the front-back direction wall part which is connected to the left-right direction wall part which stands | starts up from the both sides of the said bottom part edge, respectively, and encloses sealing resin from right-left front-back.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011109222A JP4910220B1 (en) | 2010-10-19 | 2011-05-16 | LED module device and manufacturing method thereof |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010234173 | 2010-10-19 | ||
JP2010234173 | 2010-10-19 | ||
JP2011109222A JP4910220B1 (en) | 2010-10-19 | 2011-05-16 | LED module device and manufacturing method thereof |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011285456A Division JP2012109587A (en) | 2010-10-19 | 2011-12-27 | Led module device and manufacturing method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JP4910220B1 true JP4910220B1 (en) | 2012-04-04 |
JP2012109521A JP2012109521A (en) | 2012-06-07 |
Family
ID=46170935
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011109222A Expired - Fee Related JP4910220B1 (en) | 2010-10-19 | 2011-05-16 | LED module device and manufacturing method thereof |
JP2011285456A Withdrawn JP2012109587A (en) | 2010-10-19 | 2011-12-27 | Led module device and manufacturing method thereof |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011285456A Withdrawn JP2012109587A (en) | 2010-10-19 | 2011-12-27 | Led module device and manufacturing method thereof |
Country Status (1)
Country | Link |
---|---|
JP (2) | JP4910220B1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015518663A (en) * | 2012-05-07 | 2015-07-02 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | Element carrier, electronic device and method of manufacturing radiation device, and element carrier, electronic device and radiation device |
CN111048651A (en) * | 2019-12-27 | 2020-04-21 | 广州市鸿利秉一光电科技有限公司 | High-reflectivity UVLED substrate and production method |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9433075B2 (en) | 2012-08-27 | 2016-08-30 | Mitsubishi Electric Corporation | Electric power semiconductor device |
CN104344235A (en) * | 2013-07-26 | 2015-02-11 | 盈胜科技股份有限公司 | Method for manufacturing integrated multilayer LED (light-emitting diode) lamp tube with bridging unit |
JP2015076576A (en) * | 2013-10-11 | 2015-04-20 | パナソニックIpマネジメント株式会社 | Electric device and manufacturing method of the same |
KR101550778B1 (en) * | 2013-11-20 | 2015-09-08 | 주식회사 루멘스 | Light emitting device package, backlight unit and lighting device |
KR101607140B1 (en) * | 2014-03-27 | 2016-03-29 | 주식회사 루멘스 | Light emitting device package, backlight unit, lighting device and its manufacturing method |
WO2017163593A1 (en) | 2016-03-24 | 2017-09-28 | パナソニックIpマネジメント株式会社 | Semiconductor module and method for manufacturing same |
JP2018056397A (en) | 2016-09-29 | 2018-04-05 | 日亜化学工業株式会社 | Method for manufacturing metal base substrate, method for manufacturing semiconductor device, metal base substrate, and semiconductor device |
JP7064127B2 (en) | 2017-09-29 | 2022-05-10 | 日亜化学工業株式会社 | Light emitting device and its manufacturing method |
WO2019097790A1 (en) | 2017-11-15 | 2019-05-23 | パナソニックIpマネジメント株式会社 | Semiconductor module and production method therefor |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004265986A (en) * | 2003-02-28 | 2004-09-24 | Citizen Electronics Co Ltd | High luminance light emitting element, and method for manufacturing the same and light emitting device using the same |
JP2006005290A (en) * | 2004-06-21 | 2006-01-05 | Citizen Electronics Co Ltd | Light emitting diode |
JP2006270002A (en) * | 2005-03-25 | 2006-10-05 | Nippon Rika Kogyosho:Kk | Metal board for packaging light emitting diode and light emitting device |
WO2006129690A1 (en) * | 2005-05-31 | 2006-12-07 | Showa Denko K.K. | Substrate for led and led package |
-
2011
- 2011-05-16 JP JP2011109222A patent/JP4910220B1/en not_active Expired - Fee Related
- 2011-12-27 JP JP2011285456A patent/JP2012109587A/en not_active Withdrawn
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004265986A (en) * | 2003-02-28 | 2004-09-24 | Citizen Electronics Co Ltd | High luminance light emitting element, and method for manufacturing the same and light emitting device using the same |
JP2006005290A (en) * | 2004-06-21 | 2006-01-05 | Citizen Electronics Co Ltd | Light emitting diode |
JP2006270002A (en) * | 2005-03-25 | 2006-10-05 | Nippon Rika Kogyosho:Kk | Metal board for packaging light emitting diode and light emitting device |
WO2006129690A1 (en) * | 2005-05-31 | 2006-12-07 | Showa Denko K.K. | Substrate for led and led package |
JP2006339224A (en) * | 2005-05-31 | 2006-12-14 | Tanazawa Hakkosha:Kk | Substrate for led and led package |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015518663A (en) * | 2012-05-07 | 2015-07-02 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | Element carrier, electronic device and method of manufacturing radiation device, and element carrier, electronic device and radiation device |
CN111048651A (en) * | 2019-12-27 | 2020-04-21 | 广州市鸿利秉一光电科技有限公司 | High-reflectivity UVLED substrate and production method |
CN111048651B (en) * | 2019-12-27 | 2021-12-17 | 广州市鸿利秉一光电科技有限公司 | High-reflectivity UVLED substrate and production method |
Also Published As
Publication number | Publication date |
---|---|
JP2012109587A (en) | 2012-06-07 |
JP2012109521A (en) | 2012-06-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4910220B1 (en) | LED module device and manufacturing method thereof | |
JP5038623B2 (en) | Optical semiconductor device and manufacturing method thereof | |
US10103304B2 (en) | LED module | |
TWI528508B (en) | Method for manufacturing ceramic package structure of high power light emitting diode | |
JP4914998B1 (en) | LED module device and manufacturing method thereof | |
CN104937326B (en) | Light fixture and method for manufacturing light fixture | |
KR20120002916A (en) | Led module, led package, and wiring substrate and manufacturing method thereof | |
JP2011176347A (en) | Power light emitting die package with reflecting lens | |
JPWO2006030671A1 (en) | LED device | |
JP4904604B1 (en) | LED module device and manufacturing method thereof | |
JP5940799B2 (en) | Electronic component mounting package, electronic component package, and manufacturing method thereof | |
WO2012053550A1 (en) | Led module device, method for manufacturing same, led package used for led module device, and method for manufacturing same | |
JP2011159951A (en) | Led module device and method of manufacturing the same | |
JP2012049486A (en) | Led package and manufacturing method therefor, and led module device configured of the same led package and manufacturing method therefor | |
JP2006100753A (en) | Semiconductor module and its manufacturing method | |
JP2005116937A (en) | Semiconductor light emitting device and manufacturing method thereof | |
JP2019523560A (en) | Light emitting device and manufacturing method thereof | |
JP2015038902A (en) | Led module device and manufacturing method of the same | |
JP2012104542A (en) | Lead frame for led light-emitting element, led package using the same and manufacturing method therefor | |
JP2010272744A (en) | Led module device and method of manufacturing the same | |
JP6679799B2 (en) | Light emitting device | |
JP2013058574A (en) | Package for optical semiconductor device and optical semiconductor device | |
JP2003060240A (en) | Light-emitting diode and manufacturing method therefor | |
KR101128991B1 (en) | Side view optical package and manufacturing method of the same | |
TWI542031B (en) | Optical package and manufacturing method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20111228 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150127 Year of fee payment: 3 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150127 Year of fee payment: 3 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313117 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |