JP2006100753A - Semiconductor module and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor module which installs a semiconductor component such as a light emitting device or the like, and can realize high heat dissipation and a structure in thin formation. <P>SOLUTION: A semiconductor module 10 can improve heat dissipation by efficiently transmitting a heat generated from a light emitting device 15 to a metal board 11 in such a way that a projection 12 of the metal board 11 is prepared. Therefore, a more high reliable semiconductor module can be offered in such a way that a drivability of the light emitting device can be kept by suppressing an influence caused by heat. And, a miniaturized and thin semiconductor module, capable of reducing packaging area by packaging a plurality of light emitting device 15 in exposed state and by totally gas-sealing, can be realized. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a semiconductor module and a method for manufacturing the same, and more particularly to a semiconductor module with improved heat dissipation and a method for manufacturing the same.

  First, when it is necessary to irradiate a large amount of light, an electric lamp or the like is generally used. However, the optical element 102 may be mounted on the printed circuit board 101 as shown in FIG.

  The optical element 102 is mainly a light emitting diode formed with a semiconductor.

  The light-emitting element 102 is provided with two leads 103 and 104. The back surface (anode or cathode) of the light-emitting diode chip 105 is fixed to one lead 103 with solder or the like, and the other lead 104 is the chip. It is electrically connected to the surface electrode (cathode or anode) via a fine metal wire 106. A transparent resin sealing body 107 that seals the leads 103 and 104, the light emitting diode chip 105, and the fine metal wires 106 is also formed as a lens.

On the other hand, the printed circuit board 101 is provided with electrodes 108 and 109 for supplying power to the light emitting element 102. The lead is inserted into a through hole provided therein, and the light emitting element 102 is mounted via solder or the like. (See Patent Document 1).
JP-A-9-252651

  However, since the light emitting element 102 described above is formed of a package in which the resin sealing body 107, the leads 103, 104, and the like are incorporated, the size and weight of the mounted printed board 101 are increased. Further, since the heat dissipation of the substrate itself is inferior, there is a problem that the temperature rises as a whole. For this reason, the temperature of the semiconductor chip itself also rises, and there is a problem that the driving capability is lowered.

  The present invention has been made in view of the above problems. A main object of the present invention is to provide a semiconductor module with improved heat dissipation and a method for manufacturing the same.

  The semiconductor module of the present invention includes a metal substrate, a conductive pattern formed on the metal substrate via an insulating film, and a semiconductor element placed on the conductive pattern, and protrudes from the metal substrate. The protrusion is located below the conductive pattern on which the semiconductor element is mounted. Therefore, the heat generated from the semiconductor element can be released to the outside through the metal substrate, and a circuit device that realizes improved heat dissipation can be provided.

  Further, the semiconductor module of the present invention is characterized in that a gas that prevents deterioration of the semiconductor element and / or the deterioration of the conductive pattern is sealed in a space composed of the metal substrate, the connection portion, and the transparent substrate. Therefore, it is possible to suppress deterioration of the semiconductor element and / or the conductive pattern due to oxidation.

  In the method for manufacturing a semiconductor module of the present invention, a step of forming a protrusion on a metal substrate, a step of forming a conductive pattern on the metal substrate via an insulating film, and a semiconductor element are mounted on the conductive pattern And the protrusion is formed below a region where the semiconductor element is to be placed. Therefore, it is possible to provide a semiconductor module that realizes high heat dissipation.

  According to the semiconductor module of the present invention, the heat generated from the semiconductor element can be efficiently conducted to the metal substrate by providing the protruding portion of the metal substrate. Therefore, it is possible to suppress a decrease in the driving capability of the semiconductor element due to heat generated from the semiconductor element, and it is possible to improve the reliability of the semiconductor module.

  According to the semiconductor module of the present invention, the connection portion is provided around the metal substrate, and the space is formed by fixing the transparent substrate to the connection portion. The semiconductor element is gas-sealed by filling the space with a gas. Therefore, deterioration due to oxidation of the semiconductor element and / or the conductive pattern can be suppressed, and the product life of the semiconductor module can be improved. Furthermore, since the light emitting element can be barely mounted, the semiconductor module can be reduced in size and thickness.

  According to the method for manufacturing a semiconductor module of the present invention, the protrusion is formed on the metal substrate, and the protrusion is located below the region where the semiconductor element is to be placed. Therefore, it is possible to efficiently transfer the heat generated from the semiconductor element to the metal substrate, and it is possible to provide a semiconductor module that realizes improved heat dissipation and reliability.

  The present invention is a semiconductor module in which a semiconductor element that requires heat dissipation is mounted, and in particular, a substrate having unevenness is attached to the lower layer through an insulating layer, and the heat dissipation of the power device is improved through this. is there. As can be seen from FIG. 1, since the protruding portion 12 and the protrusion 12 </ b> A protrude, the thermal resistance of this portion is lowered and the heat dissipation is improved.

  Examples of the semiconductor element include a light emitting element, a passive element, and a semiconductor element whose back surface serves as a current inflow or outflow electrode. In the first embodiment, the second embodiment, and the third embodiment, description will be made by adopting a light emitting element for the purpose of improving heat dissipation and increasing driving ability. In the fourth embodiment, a power semiconductor element sealed with a heat radiating plate will be used.

<First Embodiment>
The semiconductor module of this embodiment will be described with reference to FIGS.

  A protrusion 12 is formed on the surface of the metal substrate 11, and a film of an insulating resin 13 is deposited on the surface of the metal substrate 11 so as to cover the protrusion 12. A conductive pattern 14 is formed on the upper surface of the insulating resin 13, and the protrusion 12 and the conductive pattern 14 are insulated by the insulating resin 13. A plurality of light emitting elements 15 are electrically connected to the conductive pattern 14, and each of the light emitting elements 15 is sealed with a light transmissive resin 16. Further, a connection portion 17 is provided around the metal substrate 11, and a transparent substrate 18 is fixed to the connection portion 17. Accordingly, a space is formed by the metal substrate 11, the connection portion 17, and the transparent substrate 18, and the light emitting element 15 is sealed in the space, and the conductive pattern 15 is substantially sealed. Further, a gas for preventing deterioration of the light emitting element 15 and / or the conductive pattern is sealed in this space.

  Here, since the resin 16 is transparent, the adhesion is generally poor. Therefore, it is better to seal with the transparent substrate 18. However, when the adhesion is good, the connecting portion 17 and the transparent substrate 18 are not necessary.

  As the metal substrate 11, Al, Cu, Fe, or the like can be used. In this embodiment, Cu is adopted in consideration of heat dissipation. The metal substrate 11 has a role of efficiently releasing the heat generated from the light emitting element 15 to the outside and increasing the driving capability by preventing the temperature of the light emitting element from rising. In addition, light other than light emitted upward from the flatness of the metal substrate 11 is efficiently reflected and directed upward, and screwing hole processing on mounting, bending workability such as a parabolic surface, etc. Advantages such as superiority can be mentioned.

  As shown in FIG. 1B, by forming the protruding portion 12 on the metal substrate 11, the conductive pattern 14 and the protruding portion 12 can be brought close to each other while insulation is maintained. Therefore, the heat generated from the light emitting element 15 can be efficiently released to the metal substrate 11. The protrusion 12 is preferably formed below the conductive pattern on which the light emitting element 15 is placed.

  The insulating resin 13 becomes a heat resistance material when heat generated from the light emitting element is transmitted to the metal substrate 11. Therefore, it is possible to employ an insulating resin 13 in which a filler such as a Si oxide film or aluminum oxide is mixed in order to reduce the thermal resistance. However, depending on the particle size of the filler, the filler may be sandwiched between the upper portion of the protruding portion 12 and the conductive pattern 14, which may damage the conductive pattern 14 or impair the flatness. In such a case, as shown in FIG. 1C, by forming the protrusion 12 from a set of protrusions 12A, a space for the filler to enter between the protrusions 12A is secured, and the conductive pattern 14 is affected. It is possible to achieve an improvement in heat dissipation without imparting.

  The conductive pattern 14 is formed of a copper foil and functions as a chip land, a bonding pad, a fixed pad for an external lead, and the like. In this embodiment, the conductive pattern 14 and the projecting portion 12 are close to each other in a state where insulation is maintained, but may be thermally or electrically connected depending on circumstances.

  As the light emitting element 15, a light emitting diode, a semiconductor laser, or the like is employed. There are two types of bare light emitting diodes, the cathode type and the anode type on the back side of the chip. In this embodiment, the type is an anode type. This can be realized by simply changing the direction of the power source.

  When a light emitting diode is employed as the light emitting element 15, a light transmissive resin 16 is provided so as to seal the light emitting diode. This is employed as a lens, and is formed in a convex shape in order to efficiently emit light upward from the substrate. The material of the resin 16 may be a resin transparent to light, and a silicone resin, an epoxy resin, or the like is employed. In FIG. 1 (A), the portion from the middle of the fine metal wire 19 to the connection portion with the conductive pattern 14 is not sealed with the resin 16 depending on the size of the lens, but FIG. 1 (B) and FIG. ) May be completely covered. By completely covering, it is possible to improve the light condensing ability and at the same time improve the reliability of the connection point of the fine metal wires.

  With reference to FIG. 1B and FIG. 1C, a space is formed by the metal substrate 11, the connection portion 17, and the transparent substrate 18, and the light emitting element 15 is sealed in this space. Usually, when the light emitting element 15 is mounted in a bare state, the light emitting element comes into contact with air, causing deterioration due to oxidation, resulting in a decrease in light emission amount and light emission intensity. However, deterioration can be prevented by sealing with resin 16. However, some materials of the resin 16 have poor adhesion. In that case, it is preferable to form a sealed space as shown in FIG. Since the amount of oxygen in the space is limited, the amount of oxidation is also limited, and deterioration and oxidation that progress with time can be suppressed. In order to stop the deterioration from the beginning, it is preferable that the space is filled with a gas that does not cause deterioration of the light emitting element or a gas that does not generate oxidation, and is sealed. Moreover, the oxidation of the conductive pattern 14 can also be suppressed by gas sealing. Examples of these gases include nitrogen gas and inert gas.

  Here, in order for the metal substrate 11 to function as a light irradiation device, a plurality of light emitting elements 15 are interspersed and these drive circuits are realized externally, but these drive circuits are mounted on the metal substrate 11. May be. In this embodiment, a bare chip light emitting element is mounted in consideration of heat dissipation and mounting area, but a packaged element may be mounted. This will be described later with reference to FIGS. Further, since the oxidation is suppressed by gas filling, the bare light-emitting element 15 does not have to be sealed with the resin 16. Therefore, the mounting area can be reduced, and the semiconductor module can be reduced in size and thickness.

  Referring to FIG. 2A, a coating 14 </ b> A may be deposited on the surface of the conductive pattern 14 in order to prevent a decrease in light reflection efficiency due to oxidation of the conductive pattern 14. As the coating 14A, it is possible to use Ni or Au that is relatively difficult to oxidize, has excellent light reflectivity, and is glossy in consideration of bonding properties with a fine metal wire. Here, Ni is adopted from the viewpoint of cost, and the entire metallic substrate is coated with substantially glossy Ni, which is used as a light reflecting plate. Further, only bonding points may be formed with materials that can be bonded (Al, Ni, Cu, Au), and the others may be covered with silver or platinum.

  For example, when Ni is adopted as the coating 14A, the bare chip light emitting diode is considered in contact resistance with the conductive pattern, Ni in the fixing region is removed, and conductive through the conductive fixing material 21 such as silver paste or solder. It is electrically connected to the pattern 14. In general, when Al is adopted as the thin metal wire, it can be connected to Ni by bonding using ultrasonic waves.

  In addition, referring to FIG. 2B, the conductive pattern formed on the metal substrate 11 can be a multilayer wiring. Here, a two-layer structure including the first wiring layer 25 and the second wiring layer 26 is used, but a multilayer structure of three or more layers is also possible. The first wiring layer 25 and the second wiring layer 26 are electrically connected at a desired location by a connecting means 27. By adopting a multilayer wiring structure, the first wiring layer 25 and the second wiring layer 26 can be formed so as to intersect in a plane. Therefore, even when the number and types of elements to be mounted are increased, the multi-layer wiring structure enables crossover and the pattern can be drawn freely.

  With reference to FIG. 3A, in this embodiment, the light emitting elements 15 are connected in series. This is because the light emission amount of each light emitting element 15 is made constant by making the value of the current flowing through the light emitting element 15 constant. However, if one of the light emitting elements is damaged and no current flows, all the light emitting elements stop emitting light.

  However, when the light emitting elements are connected in parallel, for example, when Ni is used for the surface of the conductive pattern and die bonding is performed, the contact resistance of the fine metal wire and the contact resistance of the chip vary. Accordingly, there is a problem that current concentrates on a light emitting element having a small contact resistance among a plurality of light emitting elements, and a specific light emitting element becomes abnormally bright or is damaged.

  Therefore, a plurality of semiconductor modules 10A, 10B, and 10C in which light emitting elements are connected in series as in this embodiment are connected in parallel. Accordingly, the current value flowing through each semiconductor module is the same, and the current value flowing through each light emitting element is also the same, so the brightness of the light emitting elements is unified. For example, when any of the light emitting elements in the semiconductor module 10A is damaged, the remaining semiconductor modules 10B and 10C are connected in parallel, so that the function as an irradiation device can be maintained. Furthermore, it can be repaired by replacing only the broken circuit device.

  In addition, as shown in FIG. 3B, by configuring a lighting device by combining a plurality of semiconductor modules, each circuit device can be angled, and more efficient light supply is possible. Become.

  As described above, a light-emitting element is generally made of a compound semiconductor material, and is weak against heat and also weak against oxidation. Therefore, by taking such a structure, the characteristics can be improved. The same applies to a light-receiving element made of a compound instead of a light-emitting element.

<Second Embodiment>
With reference to FIG. 4 and FIG. 5, the manufacturing method of the semiconductor module of this form is demonstrated.

  Referring to FIG. 4A, a resist 23 is applied on the metal substrate 11 and patterned so that a predetermined portion is covered with the resist 23. As the metal substrate 11, Cu, Al, Fe, or the like is employed. However, other metals or alloys may be used as long as they can be etched. In this embodiment, Cu is adopted in consideration of heat dissipation. The thickness is determined in consideration of heat dissipation and flatness.

  With reference to FIG. 4B, the protrusion 12 is formed by performing wet etching using the resist 23 as a mask. In the present embodiment, the sword mountain-shaped protrusion 12 is configured from the plurality of protrusions 12 </ b> A, but a plate-like protrusion may be used as the protrusion 12. The height of the protruding portion 12 is determined in consideration of the pressure resistance, and is preferably about 50 μm to 100 μm. Moreover, it is preferable that the protrusion part 12 is formed under the light emitting element mounting area | region arrange | positioned at a next process. After the protrusion 12 is formed, the resist 23 is removed.

  With reference to FIG. 4C, insulating resin 13 and conductive foil 24 are laminated on the upper surface of metal substrate 11. The conductive foil 24 may be pressure-bonded to the upper surface of the insulating resin 13 applied on the metal substrate 11, or the conductive foil 24 coated with the insulating resin 13 may be pressure-bonded to the metal substrate 11. . At this time, the protruding portion 12 is pressure-bonded so as to be embedded in the insulating resin 13, and the protruding portion 12 and the conductive foil are insulated. Further, the protrusions 12 are uneven in the metal substrate 11, and the adhesion with the insulating resin 13 is improved.

  The conductive foil 24 is selected in consideration of adhesiveness, bonding property, and plating property to the brazing material. As a specific material, a conductive foil made of Cu as a main raw material, a conductive foil made of Ai as a main raw material, or a conductive foil made of an alloy such as Fe-Ni is adopted. In addition, a conductive material that can be etched, which is also possible with other conductive materials, is preferable. A filler may be mixed in the insulating resin 13 in consideration of heat dissipation.

  Referring to FIG. 4D, the conductive pattern 14 is formed by etching the conductive foil 24. The conductive pattern 14 </ b> A is a pattern on which the light emitting element 15 is placed, and is located above the protruding portion 12. Although not shown, Ni may be applied to the conductive pattern 14. At this time, it is preferable that the light emitting element mounting region is not covered with Ni.

  With reference to FIG. 5A, the light emitting element 15 is mounted on the conductive pattern 14. Since the back surface of the light emitting element 15 is an electrode, it is fixed by a conductive fixing material such as silver paste or solder, and the upper electrode of the light emitting element 15 and the conductive pattern are electrically connected by a thin metal wire 19. . Thereafter, the light emitting element 15 is sealed with the light transmissive resin 16. This is used as a lens, and is formed in a convex shape in order to efficiently emit light upward from the substrate. The material of the resin 16 may be a resin transparent to light, and here, a silicone resin, an epoxy resin, or the like is employed. In this figure, the thin metal wire 19 is completely covered with the resin 16 to improve the light condensing capability and the connection reliability of the fine metal wire 19. However, it is sufficient that at least the light emitting element 15 is covered.

  Referring to FIG. 5B, a space is formed by installing connection portion 17 and transparent substrate 18 on the surface of metal substrate 11, and light emitting element 15 and conductive pattern 14 are sealed in this space. Further, gas is sealed in this space to suppress oxidation of the light emitting element 15. Nitrogen gas, inert gas, etc. are selected as this gas.

  As a method for injecting gas, a method of forming one gas injection hole in the connection portion 17 and a method of forming two gas injection holes in the connection portion 17 can be cited.

  In the former case, the apparatus is placed in a vacuum apparatus, and a vacuum is created including the space. Thereafter, the gas is introduced into the vacuum apparatus, and the space is filled with the gas because of the vacuum. Thereafter, the injection hole is closed with a resin or the like.

  The latter is a method in which gas is introduced from one injection hole, air existing in the space is discharged from the other injection hole, and after the space is replaced with gas, the injection hole is closed with resin or the like.

  In the former method, since the air in the space is slowly exhausted during the vacuum exhaust, the transparent substrate warps due to the pressure difference. Also, the transparent substrate 18 should be as thin as possible in order to suppress light absorption as much as possible. Accordingly, the mechanical strength is reduced. Therefore, it is necessary to provide a spacer. This spacer may be patterned with a photoresist or the like, or a transparent fluid may be dispersed. Further, a lens made of resin 16 may be used as a spacer.

  In addition, since deterioration due to oxidation of the light emitting element and the conductive pattern can be suppressed by gas sealing, a semiconductor module can be configured by omitting a lens.

  The connection portion 17 may be formed at any position as long as the light emitting element 15 can be sealed. Although not shown, the external electrode must be positioned outside the connection portion 17. The semiconductor module 10 of this embodiment is completed through the above steps.

  The method for mounting the element on the metal substrate 11 and forming the lens-shaped resin 16 has been described above. However, a light-emitting element molded in advance may be used.

<Third Embodiment>
As described above, the light emitting element 15 molded with a transparent resin may be used. This will be described with reference to FIGS.

  In this case, there is a method in which an anode and a cathode electrode are prepared with a lead frame or the like, the light emitting element 15 is mounted thereon, and transfer molding is performed.

  Further, a method may be considered in which an anode and a cathode electrode are arranged on a sheet without using a lead frame, the light emitting element 15 is mounted thereon, transfer molded, and then the sheet is peeled off. Alternatively, the anode and cathode electrodes may be formed by half etching from a copper plate, and the light emitting element 15 may be mounted thereon and transfer molded, and then etched back or ground so that only the electrodes remain. In either case, the anode and cathode electrodes are exposed on the back surface of the sealing resin 28. A specific structure will be described with reference to FIG.

  Referring to FIG. 7, since the sealing resin 28 and the sealed light emitting element 15 are excellent in adhesiveness in the semiconductor package 30, the connecting portion 17 and the transparent substrate 18 can be omitted. Further, a lens 29 may be formed on the upper surface of the sealing resin 28 in order to effectively emit light generated from the light emitting element 15. The lens 29 is made of a resin that is transparent to light.

  Since the effect is the same as that of the first embodiment, it is omitted here. Of course, a multilayer substrate may be used as shown in FIG.

  Either of the first embodiment and the third embodiment has the following advantages. The light emitting element has a longer life than a fluorescent lamp and is also effective in terms of power consumption. Therefore, it will be widely used in lighting equipment. At that time, since the heat dissipation is higher than that of the printed circuit board, the life is further extended. If the light emission amount is the same, it can be driven at a low current, and if the current value is the same, the light emission amount can be further increased.

<Fourth Embodiment>
In the present embodiment, a power semiconductor element 32 having a heat dissipating means will be described as an example.

  What is indicated by reference numeral 33 is the substrate described so far, and the insulating resin 13 is coated on the metal substrate 11 having the protrusions 12, and the conductive pattern 14 is further formed.

  On top of this, a power module 35 in which heat dissipating means is integrated is mounted.

  In the power module 35, the power semiconductor element 32 is sealed, and the back surface is fixed to a cap-shaped heat sink 34.

  The power semiconductor element 32 is a semiconductor element whose back surface serves as an inflow or outflow electrode of current, and a heat radiating plate 34 connected to the back surface of the semiconductor element is curved and extends to a position substantially the same as the electrode on the front surface of the semiconductor element. The heat sink 34 is electrically connected to the conductive pattern 14 located above the protrusion 12.

For example, the power semiconductor element 32 is an NPN transistor, a PNP transistor, a power MOS, an IGBT, a GTBT, or the like. As described above, the back surface of the chip serves as an outflow or inflow electrode, and the surface includes the control electrode and the current. Examples include an inflow or outflow electrode. Furthermore, an IC is also possible. The power semiconductor element 32 generates heat, but can be transmitted from the back surface of the chip to the metal substrate 11 via the heat dissipation plate 34 and the conductive pattern 14 and the protrusion 12.

BRIEF DESCRIPTION OF THE DRAWINGS (A) Top view, (B) Cross section, (C) Cross section explaining semiconductor module of this invention. It is (A) sectional drawing explaining the semiconductor module of this invention, (B) sectional drawing. It is (A) top view and (B) sectional drawing explaining the semiconductor module of this invention. It is (A) sectional drawing- (D) sectional drawing explaining the manufacturing method of the semiconductor module of this invention. It is (A) sectional drawing explaining the manufacturing method of the semiconductor module of this invention, (B) sectional drawing. BRIEF DESCRIPTION OF THE DRAWINGS (A) Top view, (B) Cross section, (C) Cross section explaining semiconductor module of this invention. It is sectional drawing explaining the semiconductor module of this invention. It is sectional drawing explaining the semiconductor module of this invention. It is sectional drawing explaining the conventional circuit device.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Semiconductor module 11 Metal substrate 12 Protrusion part 12A Protrusion 13 Insulating resin 14 Conductive pattern 14A Coating 15 Light emitting element 16 Resin 17 Connection part 18 Transparent substrate 19 Metal wire 20A External electrode 20B External electrode 21 Conductive fixing material 23 Resist 24 Conductivity Foil 25 First wiring layer 26 Second wiring layer 27 Connection means 28 Sealing resin 29 Lens 30 Semiconductor package 31 Electrode 32 Semiconductor element 33 Substrate 34 Heat sink 35 Power module

Claims (11)

A metal substrate;
A conductive pattern formed on the metal substrate via an insulating film;
Comprising a semiconductor element mounted on the conductive pattern,
A protrusion is formed on the metal substrate, and the protrusion is located below a conductive pattern on which the semiconductor element is placed.   The semiconductor module according to claim 1, wherein the semiconductor element is a light emitting element, a light receiving element, or a semiconductor element whose back surface serves as an inflow or outflow electrode of current.   The semiconductor module according to claim 2, wherein the light emitting element is a light emitting diode or a semiconductor laser.   The semiconductor module according to claim 1, wherein the projecting portion includes a plurality of projections.   The semiconductor module according to claim 1, wherein a connection portion is provided around the metal substrate, and the transparent substrate is fixed to the connection portion to seal the light emitting element.   6. The semiconductor module according to claim 5, wherein a gas that prevents deterioration of the semiconductor element and / or deterioration of the conductive pattern is sealed in a space formed by the metal substrate, the connection portion, and the transparent substrate. .   The semiconductor element is a semiconductor element whose back surface serves as a current inflow or outflow electrode, and a heat sink connected to the back surface of the semiconductor element is curved and extends to a position substantially equal to the electrode on the front surface of the semiconductor element. The semiconductor module according to claim 1, wherein the heat radiating plate is electrically connected to a conductive pattern located above the protruding portion. Forming a protrusion on the metal substrate;
Forming a conductive pattern on the metal substrate via an insulating film;
Placing a semiconductor element on the conductive pattern,
The method of manufacturing a semiconductor module, wherein the protrusion is formed below a region where the semiconductor element is to be placed.   9. The method of manufacturing a semiconductor module according to claim 8, wherein the semiconductor element is a light emitting diode, a semiconductor laser, or a semiconductor element whose back surface serves as an inflow or outflow electrode of current.   9. The method of manufacturing a semiconductor module according to claim 8, wherein a connection portion is provided on the metal substrate, and the semiconductor element is sealed by fixing a transparent substrate to the connection portion.   11. The semiconductor module according to claim 10, wherein a gas that prevents deterioration of the semiconductor element and / or deterioration of the conductive pattern is sealed in a space including the metal substrate, the connection portion, and the transparent substrate. Production method.

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