US9271389B2 - Device mounting board, semiconductor module, and method for fabricating the device mounting board - Google Patents
Device mounting board, semiconductor module, and method for fabricating the device mounting board Download PDFInfo
- Publication number
- US9271389B2 US9271389B2 US14/089,523 US201314089523A US9271389B2 US 9271389 B2 US9271389 B2 US 9271389B2 US 201314089523 A US201314089523 A US 201314089523A US 9271389 B2 US9271389 B2 US 9271389B2
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- US
- United States
- Prior art keywords
- oxide film
- mounting board
- device mounting
- semiconductor device
- insulating resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related, expires
Links
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
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Images
Classifications
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- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/142—Metallic substrates having insulating layers
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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Definitions
- the present disclosure relates to a device mounting board, a semiconductor module, and a method for fabricating the device mounting board.
- the present disclosure has been made in view of the foregoing circumstances, and one non-limiting and exemplary embodiment provides a technology capable of satisfying a characteristic of thermal conductivity and a dielectric breakdown characteristic required of a power semiconductor device mounting part and capable also of suppressing the transmission of the heat generated by a power semiconductor device to a control semiconductor device, in a device mounting board where the power semiconductor device generating much heat and the control semiconductor device low in the heat generation are mixed together.
- a power transistor such as a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) and IGBT (Insulated Gate Bipolar Transistor), or an LED device or the like may be used for the power semiconductor device, whereas a gate drive IC, an illuminance sensor, or the like may be used for the power semiconductor device.
- MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor
- IGBT Insulated Gate Bipolar Transistor
- the device mounting board includes: a metallic substrate; an oxide film formed such that surfaces of the metallic substrate are oxidized; an insulating resin layer provided on the oxide film that faces one main surface of the metallic substrate; and a wiring layer provided on the insulating resin layer, wherein the thickness of at least part of the oxide film is greater than that of the other parts of the oxide film.
- the semiconductor module includes: the above-described device mounting board; and a semiconductor device electrically connected to the wiring layer, the semiconductor device being mounted on a main surface of the device mounting board on a side where the wiring layer is formed.
- Still another embodiment of the present invention relates to a method for fabricating a device mounting board.
- the method for fabricating a device mounting board includes: forming a protruding portion on a predetermined region of a metallic substrate; roughing a surface of the protruding portion formed on the metallic substrate; forming an oxide film on a surface of the metallic substrate by performing an oxidation treatment; forming an insulating resin layer on the oxide film; and forming a wiring layer in a manner such that a metal layer is formed on the insulating resin layer and then the metal layer is selectively removed.
- FIG. 1 is a cross-sectional view showing a rough structure of a semiconductor module including a device mounting board according to a first embodiment
- FIGS. 2A to 2D are cross-sectional views to explain an outline of processes in a method for fabricating a device mounting board and a semiconductor module according to a first embodiment
- FIGS. 3A to 3C are cross-sectional views to explain an outline of processes in a method for fabricating a device mounting board and a semiconductor module according to a first embodiment
- FIGS. 4A and 4B are cross-sectional views to explain an outline of processes in a method for fabricating a device mounting board and a semiconductor module according to a first embodiment
- FIG. 5 is a cross-sectional view showing a rough structure of a semiconductor module including a device mounting board according to a second embodiment
- FIGS. 6A to 6C are cross-sectional views to explain an outline of processes in a method for fabricating a device mounting board and a semiconductor module according to a second embodiment.
- FIG. 7 is a cross-sectional view showing a rough structure of a semiconductor module including a device mounting board according to a third embodiment.
- FIG. 1 is a cross-sectional view showing a rough structure of a semiconductor module including a device mounting board according to a first embodiment.
- a semiconductor module 1 according to the first embodiment includes a device mounting board 100 and semiconductor devices 200 and 210 mounted on one main surface of the device mounting board 100 .
- the semiconductor device 200 is a power semiconductor device such as a transistor, an IGBT (Insulated Gate Bipolar Transistor), or a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor).
- the semiconductor device 210 is a control semiconductor device such as a control IC or the like.
- the device mounting board 100 is comprised of a metallic substrate 110 , oxide films 120 , an insulating resin layer 130 , and a wiring layer 140 .
- the metallic substrate 110 may be a substrate formed of a metal, which displays good thermal conductivity, such as aluminum or an aluminum alloy.
- the metallic substrate 110 is an aluminum substrate.
- the thickness of the metallic substrate 110 may be 0.5 mm to 2 mm, for instance.
- the oxide film 120 is an insulating film formed such that the surfaces of the metallic substrate 110 are oxidized.
- the oxide film 120 is formed of aluminum oxide (alumina).
- the oxide films 120 coat the top surface and the underside of the metallic substrate 110 .
- the thickness H 1 of a partial region of the oxide film 120 overlapped with the semiconductor device 200 is larger than the thickness H 2 of regions surrounding said partial region thereof. More specifically, the thickness H 1 of the oxide film 120 , which coasts the main surface of the metallic substrate 110 on a side which the wiring layers 140 are provided, underneath the semiconductor device 200 is larger than the thickness H 2 of regions surrounding said partial region thereof.
- said partial region thereof that coats a top surface of the metallic substrate 110 will be referred to as an oxide film 120 a and therefore this oxide film 120 a will be distinguished from the other parts of the oxide film 120 .
- the oxide film 120 a is formed across the entire region corresponding to the overlapped portion thereof with the semiconductor device 200
- the oxide film 120 a may instead be formed partially on the overlapped portion thereof with the semiconductor device 200 .
- the oxide film 120 a may contain a part of regions that are not overlapped with the semiconductor device 200 .
- the thickness H 1 of the oxide film may be, for example, 1.02 to 2 times the thickness H 2 of the oxide film 120 excluding the oxide film 120 a.
- the insulating resin layer 130 is provided on the oxide film 120 that faces one main surface of the metallic substrate 110 .
- the insulating resin layer 130 is laminated on the top surface of the oxide film 120 .
- the material used to form the insulating resin layer 130 may be, for instance, a melamine derivative, such as BT resin, or a thermosetting resin, such as liquid-crystal polymer, epoxy resin, PPE resin, polyimide resin, fluorine resin, phenol resin or polyamide bismaleimide. From the viewpoint of improving the of the device mounting board 100 , it is suitable that the insulating resin layer 130 has a high thermal conductivity.
- the insulating resin layer 130 contains, as a high thermal conductive filler, alumina, aluminum nitride, silica, or the like, for instance. Thereby, the heat generated by the power semiconductor device 200 in particular can be released efficiently.
- the thickness of the insulating resin layer 130 may be 50 ⁇ m to 250 ⁇ m, for instance. As described earlier, the film thickness H 3 of the insulating resin layer 130 disposed underneath the semiconductor device 210 is smaller than the film thickness H 4 of the insulating resin layer 130 disposed underneath the semiconductor device 200 by the increased thickness of the oxide film 120 a over that of the surrounding regions of the oxide film 120 .
- the wiring layer 140 is provided on top of the insulating resin layer 130 .
- the wiring layer 140 which is formed of copper, for instance, has a predetermined wiring pattern.
- the thickness of the wiring layer 140 may be 10 ⁇ m to 150 ⁇ m, for instance.
- the semiconductor devices 200 and 210 are mounted on the main surface of the device mounting board 100 on a side thereof where the wiring layer 140 is formed.
- Device electrodes (not shown) at lower surface sides of the semiconductor devices 200 and 210 are electrically connected to the wiring layers 140 (electrodes) by way of solders 150 .
- a metal paste or adhesive may be used instead of the solder.
- Device electrodes (not shown) at upper surface sides of the semiconductor devices 200 and 210 are wire-bonded to the wiring layers 140 using aluminum wires 152 , for instance. Copper wires or gold wires may be used instead of the aluminum wires.
- an aluminum wire 152 connected to one of the device electrodes at the upper surface of the semiconductor device 210 and another aluminum wire 152 connected to one of the device electrodes at the upper surface of the semiconductor device 200 are both connected to a part of the wiring layer 140 .
- a control signal with which to control the operation of the semiconductor device 200 is transmitted from the semiconductor device 210 to the semiconductor device 200 , and the semiconductor device 200 performs a switching operation according to the control signal.
- FIGS. 2A to 2D A manufacturing process for a semiconductor module including a device mounting board according to the first embodiment will now be described with reference to FIGS. 2A to 2D , FIGS. 3A to 3C , and FIGS. 4A and 4B .
- a metallic sheet 109 formed mainly of aluminum is first prepared.
- the metallic sheet 109 is a large-sized plate before being subjected to a punching process where it is separated into individual metallic substrates 110 .
- the metallic sheet 109 is of an approximately square shape with the side length of 100 mm to 1000 mm, for instance.
- a plurality of protruding portions 111 are formed in a predetermined mounting region of the semiconductor device 200 .
- the height of the protruding portions 111 is 0.1 to 0.2 mm, for instance.
- a method employed for the formation of the protruding portions 111 is not limited to any particular one and may be a die and mold machining by means of press, for instance.
- the metallic sheet 109 is immersed in a sulphuric acid solution 400 , and the surfaces of the metallic sheet 109 are subjected to an etching such as slight etching.
- an etching such as slight etching.
- a conspicuous processing strain occurs in the protruding portions 111 formed in the metallic sheet 109 , thereby damaging the crystals.
- a large number of fine crystal grains are formed in the protruding portion 111 as compared with other regions of the metallic sheet 109 .
- performing the etching on the surface of the metallic sheet 109 forms a finer roughness or finer asperities in the protruding portions 111 than in other regions of the surface of the metallic sheet 109 .
- an oxide film 120 is formed on the surfaces of the metallic sheet 109 by performing an oxidation treatment.
- the metallic sheet 109 which is connected to a positive electrode of a not-shown power supply, is immersed in an oxalate solution 410 , for instance.
- cathode terminals 420 which are each connected to a negative electrode of the power supply, are disposed counter to each other at predetermined intervals from both main surfaces of the metallic sheet 109 (i.e., the metallic sheet 109 are interposed between the cathode terminals 420 spaced apart from the metallic sheet 109 at the predetermined intervals, respectively).
- the oxidation treatment of the metallic sheet 109 may be achieved by the use of a plasma oxidation.
- a plasma oxidation an alternate current is applied between the metallic sheet 109 , which serves as the positive electrode, and the negative electrodes in a neutral or alkaline treatment liquid, and a plasma discharge (micro arc) is generated so as to oxidize the surfaces of the metallic sheet 109 .
- the oxidation treatment of the metallic sheet 109 forms a surface layer 120 , of the metallic sheet 109 , which is the oxide film 120 .
- the surface of the metallic sheet 109 is coated with the oxide film 120 .
- the metallic sheet 109 is formed such that finer asperities are formed on the surface of the protruding portions 111 as compared with other regions of the surface of the metallic sheet 109 .
- the protruding portions 111 are more likely to be oxidized than other regions of the surface thereof.
- the oxide film 120 a whose film thickness is larger than that of other regions of surface thereof, is formed in the protruding portions 111 .
- an insulating resin layer 130 formed of an insulating resin film is placed on top of the oxide film 120 provided at an upper surface side of the metallic sheet 109 .
- a metallic foil 141 such as copper foil is placed on top of the insulating resin layer 130 . Then, the metallic substrate 110 , the insulating resin layer 130 and the metallic foil 141 are press-bonded together using a press machine.
- the metallic foil 141 is selectively removed so as to form wiring layers 140 of a predetermined pattern by using known photolithography method and etching method.
- the punching process or cutting process is performed so as to have separated individual device mounting boards 100 .
- the device mounting board 100 according to the first embodiment is formed.
- semiconductor devices 200 and 210 are mounted on the wiring layers 140 by way of solders 150 .
- the device electrodes at upper surface sides of the semiconductor devices 200 and 210 are electrically connected to predetermined regions of the wiring layers 140 by way of aluminum wires 152 by using a wire bonding method.
- the semiconductor module 1 according to the first embodiment is formed.
- the thickness of the oxide film 120 is locally made thicker, so that a partial region, whose thermal conductivity and dielectric breakdown voltage are higher than that of regions surrounding said partial region.
- the semiconductor device 200 which is the heat generation source
- both high thermal conductivity and high dielectric breakdown characteristic underneath the semiconductor device 200 can be attained.
- the thickness of the insulating resin layer 130 underneath the semiconductor device 210 which is relatively low in heat generation, is larger than the thickness of the insulating resin layer 130 underneath the semiconductor device 200 .
- This structure suppresses the transfer of heat generated by the semiconductor device 200 to the metallic substrate 110 and the transfer of the thus generated heat to the semiconductor device 210 via the metallic substrate 110 .
- it is less likely to increase the temperature of the semiconductor device 210 via the metallic substrate 110 in the even that the semiconductor device 200 generates heat.
- the operation reliability of the semiconductor device 210 can be improved.
- the semiconductor module 1 is configured such that the semiconductor device 200 (power semiconductor device) and the semiconductor device 210 (control semiconductor device) are mounted on the above-described device mounting board 100 .
- the semiconductor device 200 power semiconductor device
- the semiconductor device 210 control semiconductor device
- both high dielectric breakdown characteristic and high thermal conductivity in the power semiconductor device are ensured without causing an increase in temperature of the control semiconductor device.
- the operation reliability of the semiconductor module 1 can be improved.
- FIG. 5 is a cross-sectional view showing a rough structure of a semiconductor module including a device mounting board according to a second embodiment.
- a feature of the second embodiment different from the features of the above-described first embodiment is described hereunder. That is, the second embodiment is characterized in that the surface of a partial region of the oxide film 120 , whose film thickness is larger than that of other regions thereof, is disposed at the same height (level) of the surfaces of other regions thereof or the partial surface thereof is formed further toward the metallic substrate 110 , namely more inwardly toward the metallic substrate 110 , than the surfaces of the other regions thereof.
- FIGS. 6A to 6C A manufacturing process for a semiconductor module including a device mounting board according to the second embodiment will now be described with reference to FIGS. 6A to 6C .
- a metallic sheet 109 formed mainly of aluminum is first prepared.
- the metallic sheet 109 is a large-sized plate before being subjected to the punching process where it is separated into individual metallic substrates 110 .
- the metallic sheet 109 is of an approximately square shape with the side length of 100 mm to 1000 mm, for instance.
- a plurality of protruding portions 111 are formed in a predetermined mounting region of the semiconductor 200 .
- the height of the protruding portions 111 is 0.1 to 0.2 mm, for instance.
- the tips of the protruding portions 111 are positioned such that the tips thereof are formed further inwardly into and toward the metallic sheet 109 relative to the surfaces of the metallic sheet 109 where no protruding portions 111 is formed.
- a method employed for the formation of the protruding portions 111 is not limited to any particular one and may be a die and mold machining by means of press, for instance.
- the oxide film 120 is formed on a surface layer of the metallic sheet 109 , as shown in FIG. 6 , by employing a method similar to that used in the first embodiment.
- the metallic sheet 109 Used in the second embodiment is the metallic sheet 109 where the tips of the protruding portions 111 are positioned further inwardly into and toward the metallic sheet 109 relative to the surfaces of the metallic sheet 109 where no protruding portions 111 is formed.
- the metallic sheet 109 as shown in FIG. 6C can be formed where the surface of the oxide film 120 a , whose film thickness is larger than that of other regions thereof, is positioned at the same height (level) of the surfaces of other regions thereof or the partial surface thereof is positioned further toward the metallic sheet 109 than the surfaces of the other regions thereof.
- the metallic sheet 109 becomes the metallic substrate 110 as shown in FIG. 5 through a dicing step, of cutting the board into a plurality of separated individual elements, such as the punching process.
- the protruding portion s 111 are provided in the metallic substrate 110 such that the tips of the protruding portions 111 are positioned further inwardly into and toward the metallic substrate 110 relative to the surfaces of the metallic substrate 110 where no protruding portions 111 is formed and such that the thickness of the oxide film 120 is locally made thicker.
- the metallic substrate 110 can be formed where the surface of the oxide film 120 a , which is thicker than other regions thereof, is disposed at the same height of the surfaces of other regions thereof or the partial surface thereof is positioned further toward the metallic substrate 110 than the surfaces of the other regions thereof.
- the dielectric breakdown voltage of the oxide film 120 a can be raised relative to the other regions thereof by the increased thickness of the oxide film 120 a over that of the other regions of the oxide film 120 .
- the film thickness of the insulating resin layer 130 on the oxide film 120 can be made thicker in the oxide film 120 a , so that the dielectric breakdown voltage of the insulating resin layer 130 can be raised. In this manner, the dielectric breakdown strength of the device mounting board 100 can be improved and the dielectric breakdown can be suppressed and therefore the reliability can be improved.
- FIG. 7 is a cross-sectional view showing a rough structure of a semiconductor module including a device mounting board according to a third embodiment.
- a semiconductor device 400 is a blue LED device
- a semiconductor device 401 is a green LED device
- a semiconductor device 402 is a red LED device
- a semiconductor device 403 is a white LED device.
- a semiconductor device 410 is an illuminance sensor used to control the LED devices
- a semiconductor module 300 is an LED module.
- the LED devices 400 to 403 are mounted respectively on regions 120 a 1 to 120 a 4 , of an oxide film 120 , whose film thickness is larger than the film thickness of the surrounding regions thereof.
- the thicker regions 120 a 1 to 120 a 4 are isolated for each of the respective LED devices 400 to 403 . Since in this structure the heats generated by the respective LED devices 400 to 403 are isolated for each one of them, the heat generated by one LED is less likely to be transmitted to its adjacent LED or LEDs and therefore the effect of the heat generated by adjacent LEDs on the operation characteristics of LEDs can be suppressed. For example, the drop in luminous intensity of the red LED, whose luminous intensity drops when the ambient temperature rises on account of the heat generated by the surrounding LEDs, can be suppressed by employing the structure according the third embodiment. Also, a thermally-weak illuminance sensor can be mounted on the same substrate as that which mounts the LED devices while the thermally-weak illuminance sensor is thermally isolated from the LED devices. Thus, the size of the LED module can be reduced.
- FIG. 7 discloses an exemplary embodiment where the LED devices 400 to 403 are respectively mounted above the thicker oxide films 120 a 1 to 120 a 4 , which are isolated for every one of the LED devices 400 to 403 .
- this structure should not be considered as limiting and, for example, the LED devices 400 to 403 may be mounted above one thick oxide film (e.g., the oxide film 12 a 1 ), which is not isolated for each of a plurality of LED devices.
- the thick oxide film 120 a 1 that excels in thermal conductivity is formed in a large area as compared with the case where the oxide films 120 a 1 to 120 a 4 are isolated from each other.
- This modification is advantageous in that the thermal conductivity for the module as a whole is enhanced.
- the third embodiment and its modification that excel in thermal conductivity are suitable to the case where a plurality of LEDs of the same type are mounted on the device mounting board.
- the combination of types of LED devices and the number of LED devices used in the LED module are not limited thereto.
- passive components such as variable resistors may be mounted in the LED module.
- the third embodiment discloses the example where the thick oxide films 120 a 1 to 120 a 4 are isolated for each LED.
- the modification to this third embodiment also discloses the example where a plurality of LEDs are mounted on one thick oxide film.
- the arrangement in the LED module where the above-described blue, green, red and white LEDs are mounted, the arrangement may be such that, for example, only an oxide film corresponding to the red LED is isolated, and the remaining blue, green and white LEDs are mounted on a same thick oxide film.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Insulated Metal Substrates For Printed Circuits (AREA)
Abstract
Description
- (1) Japanese Patent Application Publication No. 2003-303940.
- (2) Japanese Patent Application Publication No. Hei05-191001.
- (3) Japanese Patent Application Publication No. 2008-159647.
Claims (6)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2011-213284 | 2011-09-28 | ||
JP2011213284 | 2011-09-28 | ||
PCT/JP2012/006032 WO2013046617A1 (en) | 2011-09-28 | 2012-09-21 | Substrate for mounting element thereon, semiconductor module, and method for manufacturing substrate for mounting element thereon |
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PCT/JP2012/006032 Continuation WO2013046617A1 (en) | 2011-09-28 | 2012-09-21 | Substrate for mounting element thereon, semiconductor module, and method for manufacturing substrate for mounting element thereon |
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US20140078687A1 US20140078687A1 (en) | 2014-03-20 |
US9271389B2 true US9271389B2 (en) | 2016-02-23 |
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US14/089,523 Expired - Fee Related US9271389B2 (en) | 2011-09-28 | 2013-11-25 | Device mounting board, semiconductor module, and method for fabricating the device mounting board |
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US (1) | US9271389B2 (en) |
JP (1) | JP5999376B2 (en) |
WO (1) | WO2013046617A1 (en) |
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---|---|---|---|---|
WO2013018344A1 (en) * | 2011-07-29 | 2013-02-07 | 三洋電機株式会社 | Substrate for mounting elements and method for producing same, and semiconductor module and method for producing same |
JP2017147364A (en) * | 2016-02-18 | 2017-08-24 | 株式会社東芝 | Semiconductor module |
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JPH05191001A (en) | 1991-02-26 | 1993-07-30 | Sky Alum Co Ltd | Board for printed wiring and manufacture thereof |
JP2003303940A (en) | 2002-04-12 | 2003-10-24 | Hitachi Ltd | Insulation circuit board and semiconductor device |
US20050272252A1 (en) * | 2004-05-28 | 2005-12-08 | Ryosuke Usui | Circuit device |
JP2006100753A (en) | 2004-09-30 | 2006-04-13 | Sanyo Electric Co Ltd | Semiconductor module and its manufacturing method |
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JP2008159647A (en) | 2006-12-21 | 2008-07-10 | Sumitomo Metal Mining Co Ltd | Manufacturing method of heat dissipation substrate for electric circuit |
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JPH02129989A (en) * | 1988-11-09 | 1990-05-18 | Mitsubishi Electric Corp | Metal base substrate with compound insulating layer |
JPH02249293A (en) * | 1989-03-23 | 1990-10-05 | Matsushita Electric Ind Co Ltd | Metal base substrate |
JP5002350B2 (en) * | 2007-06-28 | 2012-08-15 | 三洋電機株式会社 | Circuit equipment |
JP2009123980A (en) * | 2007-11-16 | 2009-06-04 | Sumitomo Metal Mining Co Ltd | Aluminum-based heat dissipation substrate for electric circuit and method for manufacturing the same |
-
2012
- 2012-09-21 WO PCT/JP2012/006032 patent/WO2013046617A1/en active Application Filing
- 2012-09-21 JP JP2013535885A patent/JP5999376B2/en active Active
-
2013
- 2013-11-25 US US14/089,523 patent/US9271389B2/en not_active Expired - Fee Related
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JPH05191001A (en) | 1991-02-26 | 1993-07-30 | Sky Alum Co Ltd | Board for printed wiring and manufacture thereof |
JP2003303940A (en) | 2002-04-12 | 2003-10-24 | Hitachi Ltd | Insulation circuit board and semiconductor device |
US20050272252A1 (en) * | 2004-05-28 | 2005-12-08 | Ryosuke Usui | Circuit device |
JP2006100753A (en) | 2004-09-30 | 2006-04-13 | Sanyo Electric Co Ltd | Semiconductor module and its manufacturing method |
US20080035943A1 (en) | 2006-08-11 | 2008-02-14 | E. I. Dupont De Nemours And Company | Device chip carriers, modules, and methods of forming thereof |
JP2008159647A (en) | 2006-12-21 | 2008-07-10 | Sumitomo Metal Mining Co Ltd | Manufacturing method of heat dissipation substrate for electric circuit |
JP2011222551A (en) | 2010-04-02 | 2011-11-04 | Kyocera Corp | Insulating heat-radiating substrate |
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Also Published As
Publication number | Publication date |
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US20140078687A1 (en) | 2014-03-20 |
WO2013046617A1 (en) | 2013-04-04 |
JPWO2013046617A1 (en) | 2015-03-26 |
JP5999376B2 (en) | 2016-09-28 |
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