JP2008205395A - Surface-mounted light emitting diode and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a surface-mounted light emitting diode superior in heat dissipating characteristics, reliability and productivity. <P>SOLUTION: The surface-mounted light emitting diode 10 includes a base member 2 made of metal, a semiconductor light emitting element 1 whose backside is fixed by bonding to the base member 2, and a reflector 6 made of metal which is joined to the base member 2 via a thermally conductive adhesive sheet 5 so as to surround the semiconductor light emitting element 1. The heat generated from the semiconductor light emitting element 1 is conducted through the base member 2 and the thermally conductive adhesive sheet 5 to the reflector 6, and radiated from the reflector 6 to the outside. Since the reflector 6 is made of metal, the heat is efficiently radiated to the outside. Since the reflector 6 can be easily diced along cut-guide lines provided thereto, productivity is improved without deteriorating the yield. An electrode connected to the semiconductor light emitting element 1 is formed on a conductor layer 4 on the outside of the reflector 6, thereby the reflector 6 can be miniaturized. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a surface mount light emitting diode, and more particularly to a surface mount light emitting diode excellent in heat dissipation, reliability, and productivity, and a method for manufacturing the same.

  A semiconductor light emitting device is a device in which a PN junction is formed on a compound semiconductor wafer such as AlInGaP or GaN, and light emission of visible light or near infrared light is obtained through forward current thereto. In recent years, display, communication, and measurement have been started. Widely applied to control. Furthermore, the range of application has been expanded to the field for vehicles where heat dissipation and reliability are particularly important. Surface mount light emitting diodes that meet these requirements have been developed. Conventional surface-mounted light-emitting diodes have been proposed in Patent Documents 1 to 3, for example.

  FIG. 17 is a schematic cross-sectional view showing an example of the configuration of a conventional surface-mounted light emitting diode. As shown in FIG. 17, the surface-mounted light emitting diode 100 includes a chip substrate 101, an LED chip 102 mounted on the chip substrate 101, and a frame formed on the chip substrate 101 so as to surround the LED chip 102. And a mold resin 104 filled in the recessed portion of the frame-like member 103.

  The chip substrate 101 is made of a heat-resistant resin as a flat copper-clad wiring substrate, and includes a chip mounting land 105 and a connection land 107 on the surface, and a surface mounting terminal portion 106 that goes from the surface to the lower surface through both edges. And. The LED chip 102 is bonded onto the chip mounting land 105 of the chip substrate 101, and is electrically connected to the adjacent connection land 107 by wire bonding.

  The mold resin 104 is made of a transparent material such as an epoxy resin, for example, and is filled in the recessed portion inside the frame-like member 103 and cured. The chip substrate 101 is composed of an upper substrate and a lower substrate as a two-layer structure by, for example, an Any Layer AGSP (Advanced Grade Solid-bump Process) method.

  FIG. 18 is a perspective view showing another example of the configuration of a conventional surface-mounted light emitting diode. As shown in FIG. 18, the semiconductor light emitting device 200 includes a lead frame 201, a semiconductor light emitting element 202, a sealing member 203, and a reflection plate 205. The lead frame 201 has a plurality of lead terminals 204a and 204b. The semiconductor light emitting element 202 is die-bonded to the lead frame 201. The sealing member 203 seals the lead frame 201 so as to expose each of the plurality of lead terminals 204 a and 204 b and the semiconductor light emitting element 202. The reflection plate 205 is attached to the sealing member 203 and emits light emitted by the semiconductor light emitting element 202 in one direction.

  A predetermined lead terminal 204a connected to a portion of the lead frame 201 to which the semiconductor light emitting element 202 is die-bonded among the plurality of lead terminals is arranged toward the side where the reflection plate 205 is located and connected to the reflection plate 205. According to this configuration, the predetermined lead terminal 204 a connected to the portion where the semiconductor light emitting element 202 is die-bonded is connected to the reflector 205. Thereby, the heat generated in the semiconductor light emitting element 202 is reliably conducted to the reflection plate 205 through the predetermined lead terminal 204a. As a result, the heat conducted to the reflecting plate 205 can be efficiently radiated by the reflecting plate 205.

In addition, there has been proposed a semiconductor light emitting device that conducts heat by conducting heat generated in the light emitting element to a reflecting plate through a ceramic substrate having good thermal conductivity.
JP 2006-165138 A JP 2005-183531 A JP 2003-197974 A

  In the conventional surface-mounted light-emitting diode 100 shown in FIG. 17, for heat dissipation, the chip is arranged on a small chip-mounting land 105 and connected only to the lower conductive pattern in a step shape. Since the chip mounting land 105 is small and heat is radiated through the conductive pattern 108, this structure has a problem that heat cannot be sufficiently radiated. Furthermore, since the frame-shaped member 103 of the surface-mounted light-emitting diode 100 is formed from a heat-resistant resin, there is a problem that heat radiation from the frame-shaped member 103 is poor.

  As for the structure, the chip substrate 101 has a two-layer structure composed of an upper substrate and a lower substrate. Due to this structure, the chip substrate 101 is interposed from the upper surface with the connection land 107 and the conductive pattern 108 interposed therebetween. Electrical wiring connection is made to the surface mounting terminal portion 106 that wraps around the lower surface. Therefore, the chip substrate 101 needs to be sequentially penetrated to the lower substrate through the substrates constituting the multilayer substrate, and has a complicated wiring connection pattern.

  Further, in the conventional surface-mounted light emitting diode 200 shown in FIG. 18, a lead terminal 204 a connected to a portion where the semiconductor light emitting element 202 is die-bonded is connected to the reflection plate 205. Since this contact area is small, there arises a problem that heat generated in the semiconductor light emitting element 202 cannot be reliably conducted to the reflection plate 205 through the lead terminals 204a. Further, there is a problem that the reflection plate 205 on the resin sealing member 203 has a plate shape and cannot sufficiently dissipate heat efficiently. As a result, there is a problem that the heat conducted to the reflection plate 205 cannot be efficiently radiated by the reflection plate 205.

  Therefore, a main object of the present invention is to provide a surface mount type light emitting diode excellent in heat dissipation, reliability and productivity, and a method for manufacturing the same.

  The surface-mount type light emitting diode according to the present invention includes a metal base member. Further, a semiconductor light emitting element having a back surface bonded and fixed on the base member is provided. In addition, a metal reflector is provided which is bonded on the base member with an adhesive sheet interposed so as to surround the semiconductor light emitting element. A conductor layer electrically connected to the semiconductor light emitting element at a position farther from the semiconductor light emitting element than a position where the reflector is bonded on the surface of the base member or on a surface not bonded to the base member on the reflector. Is formed with an insulating layer interposed.

  In this case, the heat generated from the semiconductor light emitting element is conducted to the reflector through the base member and the adhesive sheet, and is radiated from the reflector to the outside. Part of the heat is radiated to the outside through the base member. Since both the base member and the reflector are made of metal, the heat generated from the semiconductor light emitting element can be efficiently radiated to the outside, and the light generated from the semiconductor light emitting element can be efficiently emitted to the outside. The base member and the reflector may be formed by combining a plurality of metals, for example, another metal is laminated on the surface of the metal material by plating, but can be easily manufactured if formed as a single body. It is more preferable because productivity can be improved. When formed as a single body, the material of the reflector is not limited to a single metal but may be an alloy.

  Further, it is desirable that a convex portion having a width smaller than the width of the outer peripheral surface is formed on the outer peripheral surface of the reflector. Since the reflector is made of metal, dicing becomes difficult if the reflector is provided thick. Therefore, in the process of forming the reflector from the plate material, if a region thinner than the thickness of the plate material is provided as a cutting margin, and dicing along the cutting margin, dicing can be performed more easily, Productivity can be improved without reducing yield. The shape of the margin after dicing is the convex portion. Furthermore, since the surface area of a reflector will increase if the convex part is formed, it can thermally radiate more efficiently.

  The base member is preferably made of at least one of Al, Cu, Fe, Mg, or a composite thereof. Since these materials have high thermal conductivity, it is possible to provide a base member with good heat dissipation to the outside of the heat generated from the semiconductor light emitting element. Also, these materials are easy to manufacture because of their good workability.

  The reflector is preferably made of at least one of Al, Cu, Fe, and Mg, or a composite thereof. Since these materials have high thermal conductivity, it is possible to provide a reflector with good heat dissipation to the outside of the heat generated from the semiconductor light emitting element. Also, these materials are easy to manufacture because of their good workability.

  Moreover, it is desirable that the adhesive sheet is a heat conductive adhesive sheet. In this case, the adhesive sheet has a relatively high thermal conductivity (for example, 1.0 W / m · K or more), which is a value representing the ease of heat transfer in one substance. Therefore, since heat is easily conducted from the adhesive sheet to the metal reflector, the heat generated from the semiconductor light emitting element can be radiated to the outside more efficiently. In addition, since the reflector can be bonded to the base member with the heat conductive adhesive sheet, it is easy to manufacture the surface mount type light emitting diode.

  In addition, a conductor layer is formed at a position farther from the semiconductor light emitting element than the portion where the reflector is bonded on the surface of the base member, and the semiconductor light emitting element and the conductor layer are electrically connected by a conductive wire. Is desirable. In this case, the size of the reflector can be reduced. In addition, since the electrode electrically connected to the semiconductor light emitting element by the conductive wire is not inside the reflector, the light generated by the semiconductor light emitting element is reflected on the inner peripheral surface of the reflector and the upper surface of the base member, and the light is transmitted. The light radiation efficiency radiated to the outside can be improved.

  In addition, a conductor layer is formed at a position farther from the semiconductor light emitting element than the portion where the reflector is bonded on the surface of the base member, and the semiconductor light emitting element and the conductor layer are electrically connected by one conductive line. In addition, it is desirable that the semiconductor light emitting element and the base member are electrically connected by another conductive line. In this case, the size of the reflector can be reduced.

  Further, a conductor layer is formed on the inner peripheral surface of the reflector, and it is desirable that the semiconductor light emitting element and the conductor layer are electrically connected by a conductive wire. In this case, the size of the reflector can be reduced. Since the distance between the inner peripheral surface of the reflector and the semiconductor light-emitting element is shortened, the light generated by the semiconductor light-emitting element is likely to be effectively reflected in the upper surface direction, and light can be emitted more efficiently to the outside. Efficiency can be improved. Further, the shape of bright spot light emission can be easily produced, and it is suitable for applications that require bright spot light emission.

  The heat conductive adhesive sheet is preferably made of at least one of heat conductive silicone, heat conductive acrylic, and heat conductive epoxy, or a composite (multilayer body) obtained by stacking them in layers. Since these materials have high thermal conductivity, it is possible to efficiently dissipate heat generated from the semiconductor light emitting element and dissipated in the translucent resin. Here, the heat conductive adhesive sheet is filled with a heat conductive filler, and can be configured to use silicon oxide, aluminum oxide, magnesium oxide, aluminum hydroxide, or the like having good heat conductivity as a filler. In addition, as a heat conductive adhesive sheet, a structure in which a heat conductive adhesive, an aluminum foil, and a heat conductive adhesive are sequentially laminated, and a structure in which a heat conductive adhesive, a heat conductive compound, and a heat conductive adhesive are sequentially laminated Conceivable.

  Further, it is desirable that the surface mount type light emitting diode is provided with a plurality of semiconductor light emitting elements. In this case, a high output light source can be obtained. For example, if one semiconductor light emitting element such as a blue, green, and red LED chip is mounted, a light source capable of toning such as white can be obtained by adjusting current distribution to each LED chip. it can. A plurality of each of the LED chips of each color may be mounted.

  Further, it is desirable that the inner peripheral surface of the reflector is formed to be a part of any one of a conical surface, a spherical surface, and a paraboloid. In this case, light generated from the semiconductor light emitting element can be efficiently emitted.

  In addition, it is desirable that the base member is subjected to gold plating or silver plating at least on the surface to which the semiconductor light emitting element is bonded and fixed. In this case, bonding for bonding and fixing the semiconductor light emitting element to the base member is good. Moreover, silver plating has a high light reflectance, and the external extraction efficiency of the light radiated | emitted from the semiconductor light-emitting element to the base member improves.

  Further, it is desirable that a surface treatment of gold plating or silver plating is performed on the lower surface side of the base member opposite to the upper surface side to which the semiconductor light emitting element is bonded and fixed to form the external connection terminal portion. In this case, alteration of the external connection terminal portion can be suppressed.

  Further, it is desirable that a translucent resin is provided on the base member so as to cover the semiconductor light emitting element and not to contact the reflector. In this case, the translucent resin that covers the semiconductor light emitting element and shields it from the outside air to protect the circuit is not in contact with the reflector. Therefore, there is no problem that the translucent resin is expanded and contracted due to heat conduction from the semiconductor light emitting element to the translucent resin, and the translucent resin is not peeled off from the reflector. Therefore, there is no problem that the translucent resin is peeled off from the reflector due to expansion and contraction of the reflector, so that the failure rate of the surface mount light emitting diode can be reduced and the reliability can be improved. Further, the base member and the reflector can be made of materials having different thermal expansion coefficients.

  The translucent resin preferably contains a phosphor that emits light having a long wavelength when excited by light emitted from the semiconductor light emitting element. For example, the semiconductor light emitting device is a blue semiconductor light emitting device made of a gallium nitride compound semiconductor, and the translucent resin is a phosphor that emits yellow light when excited by light emitted from the blue semiconductor light emitting device. The white light source can be obtained according to this configuration. The semiconductor light emitting element may be a ZnO (zinc oxide) based compound semiconductor or a semiconductor light emitting element that emits near-ultraviolet light.

  The method for manufacturing a surface-mounted light-emitting diode according to the present invention includes a step of sequentially forming an insulating layer and a conductor layer on a part of the surface of a metal base member assembly. In addition, the method includes a step of forming a plurality of through-hole portions and cutting grooves in a metallic reflector material. Further, the method includes a step of dicing the reflector material along the groove to form the reflector. Further, the method includes a step of joining the reflector on the base member aggregate with a heat conductive adhesive sheet interposed therebetween. Further, the method includes a step of bonding and fixing the plurality of semiconductor light emitting elements on the base member aggregate inside the plurality of through-hole portions. Moreover, the process of electrically connecting a semiconductor light-emitting device and a conductor layer is provided. Further, the method includes a step of dicing the base member assembly to divide the base member assembly into surface-mounted light emitting diodes having a single base member and a single reflector.

  Another method for manufacturing a surface-mounted light emitting diode according to the present invention includes a step of forming a plurality of through-hole portions and a cutting groove in a metal reflector material. Further, the method includes a step of joining the reflector material on the metal base member aggregate with a heat conductive adhesive sheet interposed therebetween. Further, the method includes a step of sequentially forming an insulating layer and a conductor layer on a part of the surface of the reflector material. Further, the method includes a step of bonding and fixing the plurality of semiconductor light emitting elements on the base member aggregate inside the plurality of through-hole portions. Moreover, the process of electrically connecting a semiconductor light-emitting device and a conductor layer is provided. Further, the method includes a step of dicing the reflector material and the base member aggregate along the groove to divide the surface-mounted light emitting diode having a single base member and reflector.

  Still another manufacturing method of the surface-mounted light emitting diode according to the present invention includes a step of forming a plurality of through-hole portions and cutting grooves in a metal reflector material. Further, the method includes a step of dicing the reflector material along the groove to form the reflector. Further, the method includes a step of joining the reflector on the metal base member assembly with a heat conductive adhesive sheet interposed therebetween. Moreover, the process of laminating | stacking an insulating layer and a conductor layer in order on a part of surface of a reflector is provided. Further, the method includes a step of bonding and fixing the plurality of semiconductor light emitting elements on the base member aggregate inside the plurality of through-hole portions. Moreover, the process of electrically connecting a semiconductor light-emitting device and a conductor layer is provided. Further, the method includes a step of dicing the base member assembly to divide the base member assembly into surface-mounted light emitting diodes having a single base member and a single reflector.

  According to this manufacturing method, since the base member and the reflector are made of metal, the heat generated from the semiconductor light emitting element can be efficiently dissipated to the outside, and the light generated from the semiconductor light emitting element is efficiently emitted to the outside. can do. If the reflector made of metal is thick, dicing becomes difficult, but dicing becomes easier by forming a groove for cutting in the reflector material, which may reduce the yield of surface-mounted light-emitting diodes. Productivity can be improved.

  Embodiments of the present invention will be described below with reference to the drawings. In the following drawings, the same or corresponding parts are denoted by the same reference numerals, and description thereof will not be repeated.

(Embodiment 1)
1 is a schematic diagram showing a part of a cross-sectional structure of a surface-mounted light-emitting diode according to Embodiment 1 of the present invention. As shown in FIG. 1, the surface-mounted light-emitting diode 10 includes a semiconductor light-emitting element 1, a base member 2, an insulating layer 3, a conductor layer 4, a heat conductive adhesive sheet 5, a reflector 6 having a convex portion 9, and a phosphor-containing material. It is composed of a translucent resin 7 and a conductive wire 8.

  The base member 2 is made of aluminum (Al) with good thermal conductivity and is formed in a plate shape. The back surface of the semiconductor light emitting element 1 is bonded and fixed on the base member 2. An insulating layer 3 is laminated on a part of the surface of the base member 2, and a conductor layer 4 serving as a metal wiring pattern conductor is laminated on the surface of the insulating layer 3. A heat conductive adhesive sheet 5 is laminated on a partial region of the upper surface of the base member 2, which is a surface to which the semiconductor light emitting element 1 is bonded and fixed, and a reflector 6 is provided on the heat conductive adhesive sheet 5. That is, as shown in FIG. 1, the reflector 6 has a heat conductive adhesive sheet 5 interposed between the upper surface, which is the surface of the base member 2 to which the semiconductor light emitting element 1 is bonded and fixed, so as to surround the semiconductor light emitting element 1. Are joined.

  The base member 2 to which the semiconductor light emitting element 1 is bonded and fixed, and the conductor layer 4 formed at a position farther from the semiconductor light emitting element 1 than the portion where the reflector 6 is bonded on the upper surface of the base member 2 are an insulating layer. 3 is electrically insulated. The electrode of the semiconductor light emitting element 1 is electrically connected to the conductor layer 4 by a conductive wire 8. If the conductor layer 4 functions to supply current to the semiconductor light emitting element 1 from the outside as the external connection terminal portion 4a on the lower surface side opposite to the upper surface, for example, the surface light emitting diode 10 can be made to emit light. A circuit can be formed. The surface of the conductor layer 4 including the external connection terminal portion 4a is covered with a silver film, and therefore, alteration of the conductor layer 4 including the external connection terminal portion 4a is suppressed.

  The reflector 6 is made of aluminum (Al), and is formed in a mortar shape having a minimum inner diameter of about 2 mm and a maximum inner diameter of about 3 mm, for example. Moreover, the reflector 6 has the convex part 9 which is the remainder of the cutting margin used in order to make dicing easy in an outer peripheral surface. The convex portion 9 has a width smaller than the width of the outer peripheral surface of the reflector 6. The width indicates a dimension in a direction perpendicular to the upper surface of the base member 2 (the surface on which the semiconductor light emitting element 1 is bonded and fixed). That is, in the cross section of the reflector 6, as shown in FIG. 1, the dimension of the convex portion 9 in the thickness direction of the reflector 6 (vertical direction in FIG. 1) is smaller than the thickness of the reflector 6. The inner peripheral surface of the reflector 6 is mirror finished. Here, the inner peripheral surface of the reflector 6 is the surface of the reflector 6 facing the semiconductor light emitting element 1 surrounded by the reflector 6.

  Since the reflector 6 has a mortar shape and its inner peripheral surface is mirror-finished, the light generated from the semiconductor light emitting element 1 is reflected by the reflector 6 and is efficiently emitted to the outside. A part of the light generated from the semiconductor light emitting element 1 is emitted toward the base member 2, but since the base member 2 is also made of metal, the light is reflected on the upper surface of the base member 2, and the light is exposed to the outside. It is released efficiently. That is, the amount of light leaking from the lower surface side of the base member 2 is extremely small.

  A conductor layer 4 is formed on the upper surface of the base member 2 along the side surface of the base member 2. As shown in FIG. 1, in the cross section, the reflector 6 is located on the inner side of the portion where the conductor layer 4 is formed. The base member 2 is joined. That is, the reflector 6 is reduced in size as compared with the conventional surface-mounted light emitting diode (see FIG. 17) in which the reflector 6 is joined to the base member 2 along the side surface of the base member 2. If the reflector 6 is downsized, the distance from the semiconductor light emitting element 1 to the reflector 6 is shortened, so that the heat generated by the semiconductor light emitting element 1 is easily conducted to the reflector 6, and the heat is released from the reflector 6 to the outside. It becomes easy and heat dissipation improves. The conductive line 8 connects the electrode of the semiconductor light emitting element 1 and the corresponding electrode in the conductor layer 4 so as to straddle the reflector 6, and is electrically connected to the semiconductor light emitting element 1 by the conductive line 8. There is no electrode inside the reflector 6. Therefore, the light generated by the semiconductor light emitting element 1 is easily reflected in one direction by the inner peripheral surface of the reflector 6 and the upper surface of the base member 2, so that the light can be emitted to the outside more efficiently, and the light reflection efficiency can be improved. Can be improved.

  Further, inside the reflector 6 on the upper surface of the base member 2, a silicone resin is filled as a translucent resin 7 that is a resin material having a property that light can travel inside the material. It is covered with a translucent resin 7. The translucent resin 7 contains and holds a phosphor that emits yellow light when excited by light from the semiconductor light emitting device. Here, the phosphor is a substance that emits (emits) visible light having a different wavelength when irradiated with electromagnetic waves having a specific wavelength (for example, visible light, ultraviolet light, X-ray, electron beam, etc.).

  The semiconductor light emitting element 1 is a blue semiconductor light emitting element made of a gallium nitride compound semiconductor, and is formed in a chip shape having P and N electrodes on the same surface (upper surface side in FIG. 1). When the semiconductor light emitting element 1 emits light, blue light is emitted. At this time, a white color is obtained by mixing the yellow light obtained by absorbing the blue light in the phosphor dispersed and held in the translucent resin 7 and the blue light not absorbed by the phosphor. Can be obtained. If a plurality of the semiconductor light emitting elements 1 are mounted on the base member 2 by being bonded and fixed, a higher output light source can be obtained. Here, the translucent resin 7 may be formed in a convex lens shape that rises toward the side away from the surface of the base member 2. Here, blue light refers to light having an emission peak wavelength of 350 nm or more and 490 nm or less. The yellow light means light having a longer wavelength than the blue light having a peak emission wavelength of 550 nm to 650 nm.

  Here, the translucent resin 7 and the reflector 6 are not in contact. Therefore, the heat generated from the semiconductor light-emitting element 1 causes expansion and contraction of the translucent resin 7, so that the problem that the translucent resin 7 is peeled off from the reflector 6 does not occur. The rate can be reduced and the reliability can be improved. Moreover, the base member 2 and the reflector 6 can be comprised with the material from which a thermal expansion coefficient differs.

  FIG. 2 is a schematic diagram showing conduction of heat generated by the semiconductor light emitting device. In FIG. 2, arrows a, b, c, and d indicate heat conduction. As shown in FIG. 2, the heat generated by the semiconductor light emitting device 1 is conducted to the base member 2 as indicated by arrows a and b. Part of the heat conducted to the base member 2 is radiated to the outside through the base member, and part of the heat is conducted to the reflector 6 through the heat conductive adhesive sheet 5 as indicated by arrows b and c. The heat conducted to the reflector 6 is radiated to the outside as indicated by an arrow d.

  Since the base member 2 and the reflector 6 are made of Al and have high thermal conductivity, the surface-mounted light-emitting diode 10 with good heat dissipation that can efficiently radiate the heat generated from the semiconductor light-emitting element 1 to the outside is configured. can do. Since the convex portion 9 is formed on the reflector 6 and the surface area of the reflector 6 is increased, heat can be radiated more efficiently. In addition, since the reflector 6 is joined to the base member 2 with the heat conductive adhesive sheet 5 interposed, heat is easily conducted to the Al reflector 6, and the heat generated from the semiconductor light emitting element 1 is more efficiently externalized. Can dissipate heat. Needless to say, a thermally conductive adhesive sheet 5 having good thermal conductivity is used. For example, the thermally conductive adhesive sheet 5 is any one of thermally conductive silicone, thermally conductive acrylic, thermally conductive epoxy, or the like. A composite body (multilayer body) obtained by stacking layers in layers can be used.

  Since heat generated from the semiconductor light emitting element 1 can be efficiently radiated to the outside, the temperature of the semiconductor light emitting element 1 is lowered, and the temperature of the translucent resin 7 covering the semiconductor light emitting element 1 is also kept low. Therefore, deterioration due to the phosphor dispersed and held in the translucent resin 7 being exposed to the high temperature of the semiconductor light emitting element 1 is suppressed. As a result, the life of the surface-mounted light emitting diode 10 can be extended. In addition, color variations generated from the surface-mounted light emitting diode 10 can be suppressed.

  As phosphors dispersed and held in the translucent resin 7, gadolinium and cerium are added, YAG type (yttrium aluminum garnet), BOS type (Barium Ortho-Silicate), TAG type (terbium aluminum garnet). ) At least one kind. In order to obtain white light, the translucent resin 7 needs to contain a phosphor. However, as the surface-mounted light-emitting diode 10, only the translucent resin 7 not containing the phosphor emits semiconductor light. Needless to say, the element 1 may be sealed. It is desirable that the translucent resin 7 is at least one of a silicone resin, an epoxy resin, an acrylic resin, a fluorine resin, a polyimide resin, a silicone deformed epoxy resin, or a composite thereof. Since a part of the heat generated from the semiconductor light emitting element 1 is radiated to the outside through the translucent resin 7, the translucent resin 7 has good heat dissipation (for example, thermal conductivity of 0.3 W / mK or more). More preferred.

  In addition, the light generated from the semiconductor light emitting element 1 is efficiently emitted to the outside because the reflector 6 is made of metal (Al). Since the reflector 6 is made of Al, it does not require Al vapor deposition or metal plating for increasing the reflectivity as a reflection layer on the inner peripheral surface which is a surface for reflecting light in the reflector 6, so that the production is easy. Become. Further, since the base member 2 and the reflector 6 are produced simply by bonding them with the heat conductive adhesive sheet 5, the production is facilitated. Note that a plating layer made of, for example, silver plating, nickel plating, nickel-chromium plating, or the like may be formed on the inner peripheral surface of the reflector 6, and light generated from the semiconductor light emitting element 1 can be more efficiently generated by the plating layer. It can be discharged to the outside of the reflector 6.

  Next, a manufacturing procedure of the surface mount type light emitting diode 10 shown in FIG. 1 will be described. FIG. 3 is a flowchart showing a manufacturing process of the surface-mounted light emitting diode. 4 to 9 are diagrams for explaining each step of the method for manufacturing the surface-mounted light-emitting diode shown in FIG. As shown in FIG. 3, first, in step (S10), plate-like aluminum having a thickness of 0.5 mm is prepared as a base member assembly. The base member assembly is embossed in the direction of being crushed from above using an embossing mold, and the upper surface, which is the surface to which the semiconductor light emitting element is bonded and fixed in a later step, and the lower surface opposite to the upper surface, Form a recess. Here, the base member aggregate is a material formed into the base member 2 by dicing (cutting), and as will be described later, each of the semiconductor light emitting element 1 for bonding and fixing, wire bonding, and resin sealing After the process, the base member 2 is cut and separated.

  Next, in step (S20), as shown in FIG. 4, a silicon dioxide layer (thickness 0) is formed as the insulating layer 3 so as to cover the surface on the side surface of the plate-like base member aggregate and the concave portion. .1 mm) is laminated by a CVD (Chemical Vapor Deposition) method. Subsequently, in the step (S30), a copper thin film (thickness: 0.035 mm) as a metal wiring pattern conductor formed on the surface of the insulating layer 3 using electroplating, and further a silver thin film (using silver plating) A conductor layer 4 having a thickness of 0.005 mm) is laminated. Since the surface of the conductor layer 4 is silver-plated and covered with a silver thin film, the alteration of the conductor layer 4 is suppressed. Next, in step (S40), as shown in FIG. 5, a sheet-like thermally conductive silicone (thickness 0.05 mm) as the thermally conductive adhesive sheet 5 is pasted on the upper surface side of the base member assembly. That is, the heat conductive adhesive sheet 5 is affixed to the upper surface of the base member 2 inside the portion where the conductor layer 4 is formed on the upper surface side of the base member 2.

  On the other hand, a reflector is formed in steps (S110) to (S140). First, in a process (S110), as shown to Fig.9 (a), the aluminum plate (thickness 1mm) as the board | plate material 11 is prepared. FIG. 9A is a side view of the plate material 11. In practice, a material that is long in the direction perpendicular to the paper surface is prepared as the plate material 11. Next, in the step (S120), the through-hole portion 13 and the cutting groove 12 are formed in the aluminum plate by a double-side embossing method in the direction of crushing from above using an embossing die. The cutting groove 12 is formed along two orthogonal directions on the surface of the plate 11. FIG. 9B is a cross-sectional view after embossing. Here, the through-hole portion 13 is formed so as to be a part of a conical surface, and in the cross section shown in FIG. 9B, the diameter of the through-hole portion 13 decreases from the upper side to the lower side in the figure. It has become. The cutting groove 12 is an area thinner than the plate material 11.

  Next, in step (S130), dicing is performed along the groove for cutting 12. Here, dicing is performed in any of the two directions along the cutting grooves 12 formed in two orthogonal directions. Since a cutting groove is formed in the metal plate material 11 and dicing is performed along the cutting groove, the cutting width of the plate material 11 is small and dicing can be easily performed. Therefore, since the generation of defective products in the dicing process can be suppressed, the yield can be reduced and the productivity can be improved. In this way, a single plate-like reflector 6 is completed in the step (S140). FIG. 9C is a cross-sectional view of the reflector 6.

  Next, in a process (S50), as shown in FIG. 6, the reflector 6 is joined on the heat conductive adhesive sheet 5. As shown in FIG. The reflector 6 has a convex portion 9 as a remainder of the cut margin after being cut along the cutting groove 12 in the dicing in the step (S130).

  Next, in step (S60), as shown in FIG. 7, the semiconductor light emitting element 1 is bonded and fixed (mounted) to the upper surface of the base member 2 with an epoxy resin as a transparent resin. Since the semiconductor light emitting element 1 is bonded and fixed to the inside of the through-hole portion 13 formed so as to be a part of the conical surface of the reflector material, a part of the conical surface becomes the inner peripheral surface of the reflector 6. Light generated from the semiconductor light emitting element 1 can be efficiently emitted to the outside. Subsequently, in step (S <b> 70), each electrode of the semiconductor light emitting element 1 and a corresponding bonding pad of the conductor layer 4 are connected using a conductive wire (lead wire) 8 by wire bonding. Thereafter, in step (S80), as shown in FIG. 8, a translucent resin 7 (eg, silicone resin) containing a BOS phosphor is filled into the reflector 6 using a dispenser.

  Next, in step (S90), dicing is performed on the base member aggregate that is long in the direction perpendicular to the paper surface shown in FIG. In this way, in the step (S100), the single surface-mounted light emitting diode 10 shown in FIG. 1 having the single base member 2 and the reflector 6 is manufactured.

  In the first embodiment, the semiconductor light emitting device 1 is formed in a chip shape having P and N electrodes on the same surface. However, the present invention is not limited to this structure, and is formed on a chip having P and N electrodes on both sides. It may be a structure. In the case where the semiconductor light emitting element 1 has an electrode on the back surface side on the side in contact with the base member 2, the surface treatment of gold plating or silver plating is performed on the surface of the base member 2 to which the semiconductor light emitting element 1 is bonded and fixed. If applied, the bonding for fixing the semiconductor light emitting element 1 to the base member 2 will be good. In the case of silver plating, the light reflectance is high and the efficiency of extracting light outside the light is improved. Further, the substrate of the semiconductor light emitting element 1 may be either an insulator or a conductor. Needless to say, the semiconductor light emitting device 1 is not limited to a gallium nitride-based compound semiconductor, and may use a ZnO (zinc oxide) -based compound semiconductor, an InGaAlP-based, or an AlGaAs-based compound semiconductor. In any of these structures, the semiconductor light emitting element 1 can be mounted on the base member 2.

  Furthermore, a plurality of semiconductor light emitting elements 1 can be mounted on the base member 2. If a plurality of semiconductor light emitting elements 1 of the same color are mounted, a high output light source can be obtained. In addition, for example, if one or the same number of semiconductor light emitting elements such as blue, green, and red LED chips are mounted, a light source capable of toning such as white by adjusting current distribution to each LED chip Needless to say you can get

(Embodiment 2)
FIG. 10 is a schematic diagram showing a part of a cross-sectional structure of a surface-mounted light-emitting diode according to Embodiment 2 of the present invention. The surface-mounted light-emitting diode 20 according to the second embodiment and the surface-mounted light-emitting diode 10 according to the first embodiment described above basically have the same configuration. However, the second embodiment is different from the first embodiment in that the wire bonding of the semiconductor light emitting element 1 is configured as shown in FIG.

  Specifically, the reflector 6 constituting the surface-mounted light emitting diode 20 is formed in a mortar shape having a length of about 2 mm and a width of about 0.8 mm, for example. An insulating layer 3 and a conductor layer 4 are laminated on the base member 2 so as to cover one side of the side surface. One electrode of the semiconductor light emitting element 1 is connected to the bonding pad of the corresponding base member 2 by the conductive line 8a, and the other electrode of the semiconductor light emitting element 1 is connected to the bonding pad of the corresponding conductor layer 4 by the conductive line 8b. It is connected.

  With respect to the method for manufacturing the surface-mounted light-emitting diode 20, a convex portion is formed only on one side of the side surface of the base member assembly in the step (S10) shown in FIG. Next, in the step (S20), a silicon dioxide layer having a thickness of 0.05 mm as the insulating layer 3 is laminated by a sputtering method so as to cover the side surface on which the convex portions of the base member aggregate are formed and the convex portions. Is done. Next, in the step (S30), a copper thin film (thickness 0.04 mm) as a metal wiring pattern conductor laminated on the surface of the insulating layer 3 by a CVD (Chemical Vapor Deposition) method, and further using a silver plating method. A conductor layer 4 made of a silver thin film (thickness 0.01 mm) is laminated. Subsequently, in the step (S40), the sheet-like thermally conductive acrylic (thickness: 0.1 mm) as the thermally conductive adhesive sheet 5 is formed on the side surface of the base member assembly on which the conductor layer 4 is laminated. Is affixed so as to be located on the upper surface of the base member assembly, which is inside the portion where the conductor layer 4 is formed on the upper surface side of the base member assembly. Further, the sheet-like thermally conductive acrylic (thickness 0.1 mm) as the thermally conductive adhesive sheet 5 is, for example, a base member aggregate on the side surface side of the base member aggregate where the conductor layer 4 is not laminated. Attached to the upper surface of the base member assembly so as to be along the side surface of the base member.

  In the step (S70), one electrode of the semiconductor light emitting element 1 is connected to the corresponding bonding pad of the base member 2 by the conductive line 8a, and the other electrode of the semiconductor light emitting element 1 is reflected by the conductive line 8b. 6 is connected to the bonding pad of the corresponding conductor layer 4. Subsequently, in step (S80), a translucent resin 7 (for example, an epoxy resin) containing a YAG phosphor is used in a reflector 6 so as to cover the semiconductor light emitting element 1 and the conductive wire 8a. Fill.

  Since the other configuration and manufacturing procedure of the surface-mounted light emitting diode 20 are as described in the first embodiment, the description thereof will not be repeated.

(Embodiment 3)
FIG. 11 is a schematic diagram showing a part of a cross-sectional structure of a surface-mounted light-emitting diode according to Embodiment 3 of the present invention. 12 is a perspective view of the surface-mounted light-emitting diode shown in FIG. The surface-mounted light emitting diode 30 according to the third embodiment and the surface-mounted light emitting diode 10 according to the first embodiment described above basically have the same configuration. However, the third embodiment is different from the first embodiment in that the structure of the insulating layer 3 and the conductor layer 4 is as shown in FIG.

  Specifically, the base member 2 constituting the surface mount type light emitting diode 30 is made of aluminum having a thickness of 0.5 mm. The reflector 6 is formed of an aluminum plate having a thickness of 1 mm, for example, an elliptical shape having an inner diameter of about 2 mm and an inner diameter of about 1 mm. On the surface of the reflector 6 other than the surface in contact with the base member 2 with the heat conductive contact sheet 5 interposed therebetween, the conductor layer 4 is laminated with the insulating layer 3 interposed therebetween. The semiconductor light emitting element 1 and the conductor layer 4 are electrically connected by a conductive wire 8. A current for causing the semiconductor light emitting device 1 to emit light from the outside is supplied to the semiconductor light emitting device 1 through the external connection terminal portions 81 and 82 connected to the conductive layer 4. Since the other configuration of the surface-mounted light-emitting diode 20 is as described in the first embodiment, the description thereof will not be repeated.

  Next, a manufacturing procedure of the surface mount type light emitting diode 30 shown in FIG. 11 will be described. FIG. 13 is a flowchart showing a method for manufacturing the surface-mounted light-emitting diode according to the third embodiment. First, in step (S10), plate-like aluminum having a thickness of 0.5 mm is prepared as a base member aggregate. Subsequently, in step (S20), a sheet-like thermally conductive silicone (thickness 0.05 mm) as the thermally conductive adhesive sheet 5 is pasted on the upper surface of the base member assembly.

  On the other hand, a reflector material is formed in steps (S110) to (S140). First, in the same manner as in the first embodiment, an aluminum plate (thickness 1 mm) is prepared as the plate material 11 in the step (S110), and then in the step (S120), the through hole 13 and the cutting groove 12 are formed in the aluminum plate. And form. Next, in step (S130), dicing is performed along the cutting grooves 12 along the cutting grooves 12 in the direction perpendicular to the paper surface shown in FIG. 9B. In this way, a plate-shaped reflector material is completed in the step (S140). The reflector material has a plate shape that is long in the direction perpendicular to the paper surface of FIG. 9 (c), and a plurality of members formed on the reflector 6 by being diced in a later process along the direction are combined. Is.

  Next, in a process (S30), a reflector raw material is joined on the heat conductive adhesive sheet 5. FIG. Next, in a step (S40), a silicon dioxide layer (thickness: 0.1 mm) as the insulating layer 3 is formed on the upper surface of the reflector material by a CVD method. Next, in the step (S50), a copper thin film (thickness: 0.035 mm) as a metal wiring pattern conductor is formed on the surface of the insulating layer 3 by electroplating, and a silver thin film (thickness 0) is further formed using a silver plating method. .005 mm) is laminated.

  Next, in step (S60), the semiconductor light emitting element 1 is bonded and fixed (mounted) to the upper surface of the base member 2 with an epoxy resin as a transparent resin. Subsequently, in the step (S70), each electrode of the semiconductor light emitting element 1 and a bonding pad of the corresponding conductor layer 4 laminated on the reflector material are connected by wire bonding using a conductive wire (lead wire) 8. To do. Thereafter, in step (S80), translucent resin 7 (for example, silicone resin) containing a BOS phosphor is filled into the through-hole portion of the reflector material using a dispenser.

  Next, in the step (S90), a cutting groove formed in the reflector material (in the reflector material long in the direction perpendicular to the paper surface shown in FIG. 9C, cut on a cross section different from that in FIG. 9C). Since the cutting groove is formed, the cutting groove is not shown), and the reflector material and the base member assembly are diced. In this way, in the step (S100), a single surface-mounted light emitting diode 30 shown in FIG. 11 having a single base member 2 and a reflector 6 is manufactured.

(Embodiment 4)
FIG. 14 is a schematic diagram showing a part of a cross-sectional structure of a surface-mounted light-emitting diode according to Embodiment 4 of the present invention. The surface-mounted light emitting diode 40 according to the fourth embodiment and the surface-mounted light emitting diode 30 according to the third embodiment described above basically have the same configuration. However, the fourth embodiment is different from the third embodiment in that the structure of the insulating layer 3 and the conductor layer 4 is configured as shown in FIG.

  Specifically, the base member 2 constituting the surface mount type light emitting diode 30 is made of copper having a thickness of 1.0 mm. The reflector 6 is formed of a 0.75 mm thick aluminum plate, for example, in a mortar shape having a minimum inner diameter of about 2 mm and a maximum inner diameter of about 2.4 mm. On the upper surface and inner peripheral surface of the reflector 6, which is a surface other than the surface that is in contact with the base member 2 with the thermally conductive contact sheet 5 interposed therebetween, the conductor layer 4 is interposed with the insulating layer 3 interposed therebetween. Are stacked. The semiconductor light emitting element 1 and the conductor layer 4 are electrically connected by a conductive wire 8. Since other configurations of the surface-mounted light emitting diode 40 are the same as those described in the first and third embodiments, the description thereof will not be repeated.

  Next, a manufacturing procedure of the surface mount type light emitting diode 40 shown in FIG. 14 will be described. FIG. 15 is a flowchart showing a method for manufacturing the surface-mounted light-emitting diode according to the fourth embodiment. First, in step (S10), plate-like copper having a thickness of 1.0 mm is prepared as a base member aggregate. Subsequently, in the step (S20), a sheet-like thermally conductive silicone (thickness 0.03 mm) as the thermally conductive adhesive sheet 5 is pasted on the upper surface of the base member assembly. On the other hand, in steps (S110) to (S140), as described in the first embodiment, a single plate-like reflector 6 is formed from an aluminum plate (thickness: 0.75 mm) as the plate material 11.

  Subsequently, in the step (S30), the reflector 6 is bonded onto the heat conductive adhesive sheet 5. Next, in step (S40), a polyimide resin layer (thickness 0.05 mm) is formed as the insulating layer 3 on the upper surface of the reflector 6. Next, in the step (S50), a copper thin film (thickness 0.04 mm) as a metal wiring pattern conductor is formed on the surface of the insulating layer 3 by a thermal oxidation method, and further a silver thin film (thickness) using a silver plating method. 0.02 mm), and the conductor layer 4 is laminated.

  Next, in step (S60), the semiconductor light emitting element 1 is bonded and fixed (mounted) to the upper surface of the base member 2 with an acrylic resin as a transparent resin. Subsequently, in step (S70), each electrode of the semiconductor light emitting element 1 and a bonding pad provided on the inner peripheral surface of the reflector 6 of the corresponding conductor layer 4 laminated on the reflector 6 are bonded by wire bonding. A conductive wire (lead wire) 8 is used for connection. Thereafter, in step (S80), translucent resin 7 (eg, silicone resin) containing BOS phosphor is filled into reflector 6 using a dispenser.

  Next, in the step (S90), as described in the first embodiment, the base member aggregate is diced. In this manner, in the step (S100), a single surface-mounted light-emitting diode 10 having a single base member 2 and a reflector 6 shown in FIG. 14 is manufactured.

(Embodiment 5)
FIG. 16 is a schematic diagram showing a part of a cross-sectional structure of a surface-mounted light-emitting diode according to Embodiment 5 of the present invention. The surface-mounted light emitting diode 50 according to the fifth embodiment and the surface-mounted light emitting diode 30 according to the third embodiment described above basically have the same configuration. However, the fourth embodiment is different from the third embodiment in that the structure of the insulating layer 3 and the conductor layer 4 is configured as shown in FIG.

  Specifically, the base member 2 constituting the surface mount type light emitting diode 50 is made of aluminum having a thickness of 1.0 mm. The reflector 6 is formed of an aluminum plate having a thickness of 0.75 mm, for example, in a mortar shape having a minimum inner diameter of about 2.5 mm and a maximum inner diameter of about 3 mm. A conductor layer 4 is laminated at one location on the upper surface of the reflector 6 with an insulating layer 3 interposed. The semiconductor light emitting element 1 has electrodes on both sides. The electrode on the upper surface side opposite to the surface on which the semiconductor light emitting element 1 is bonded and fixed to the base member 2 and the bonding pad of the conductor layer 4 are electrically connected by a conductive wire 8.

  The method for manufacturing the surface-mounted light-emitting diode 50 according to the fifth embodiment is basically the same as the method for manufacturing the surface-mounted light-emitting diode 40 according to the fourth embodiment shown in FIG. In the method for manufacturing the surface-mounted light emitting diode 50, plate-like aluminum having a thickness of 1.0 mm is prepared as a base member aggregate in the step (S10) shown in FIG. Next, in step (S20), a sheet-like thermally conductive epoxy (thickness: 0.1 mm) as the thermally conductive adhesive sheet 5 is pasted on the upper surface of the base member assembly.

  In the step (S40), an epoxy resin layer (thickness 0.03 mm) is formed as the insulating layer 3 at one place on the upper surface of the reflector 6. Subsequently, in the step (S50), a copper thin film (thickness 0.035 mm) as a metal wiring pattern conductor is formed on the surface of the insulating layer 3 by a sputtering method, and further a gold thin film (thickness 0. 5 mm) using a gold plating method. The conductor layer 4 is stacked. Thereafter, in step (S60), the semiconductor light emitting element 1 is bonded and fixed (mounted) to the upper surface of the base member 2 with silver paste.

  Since the other configuration and manufacturing procedure of the surface-mounted light emitting diode 50 are as described in the first and fourth embodiments, the description thereof will not be repeated.

  In the description of the first to fifth embodiments, an example is described in which the base member 2 and the reflector 6 are created using a single metal plate as a raw material. A plurality of metals may be combined and formed, for example, by laminating metals by plating. The metal material forming the base member 2 and the reflector 6 is not limited to Al and Cu, and Fe, Mg, etc. excellent in heat dissipation and workability can be used, or a composite thereof can be used. However, it is more preferable to form the base member 2 and the reflector 6 as a single metal, because it can be easily manufactured as shown in FIG. 9 and productivity can be improved. When formed as a single body, the material of the base member 2 and the reflector 6 is not limited to a single metal but may be an alloy.

  Regarding the shape of the reflector 6, for example, a portion such as the convex portion 9 excluding the inner peripheral surface that is the light reflecting surface of the reflector 6 may be provided in a concavo-convex shape so as to have a shape like a radiation fin. In this way, heat dissipation from the reflector 6 to the outside is further promoted, so that heat dissipation can be further improved. The light reflecting surface of the reflector 6 is not limited to a conical surface, and the reflector 6 may be formed so as to be, for example, a spherical surface or a part of a paraboloid. In this case, the light generated from the semiconductor light emitting element 1 is efficiently used. Can release well.

  The insulating layer 3 is not limited to silicon dioxide, and can be configured, for example, by adhering acrylic rubber, epoxy, silicone, or the like to the base member 2 and the conductor layer 4 with a heat conductive adhesive material interposed therebetween. If the material which comprises the insulating layer 3 is a thing with high heat conductivity, it is more preferable.

  The heat conductive adhesive sheet 5 may be in contact with the translucent resin 7. For example, in the surface-mounted light emitting diode 10 shown in FIG. 1, the heat conductive adhesive sheet 5 is formed on the inner side of the inner peripheral wall of the reflector 6 except for the region where the semiconductor light emitting element 1 is wire bonded to the conductor layer 4. If it is set as a structure, the heat conductive adhesive sheet 4 can be made to contact with the translucent resin 7. FIG. In this case, the heat dissipated in the translucent resin 7 can be conducted to the reflector 6 through the heat conductive adhesive sheet 5. Therefore, the heat generated by the semiconductor light emitting element 1 can be radiated to the outside more efficiently.

  Furthermore, you may form the reflector 6 in the shape which increases the area which the heat conductive adhesive sheet 5 and the reflector 6 have joined. For example, the reflector 6 can be formed into a shape having irregularities or a shape having fine sawtooth-shaped notches at the joint portion with the heat conductive adhesive sheet 4. If it does in this way, the heat conduction from the heat conductive adhesive sheet 5 to the reflector 6 will improve. Therefore, the heat generated by the semiconductor light emitting element 1 can be radiated to the outside more efficiently. Moreover, the joining strength of the reflector 6 can be improved.

  The embodiment disclosed this time is to be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

FIG. 3 is a schematic diagram showing a part of a cross-sectional structure of the surface-mounted light emitting diode according to the first embodiment. It is a schematic diagram which shows conduction of the heat | fever which a semiconductor light-emitting device generate | occur | produces. It is a flowchart which shows the manufacturing process of a surface mount type light emitting diode. It is a schematic diagram which shows a conductor layer formation process. It is a schematic diagram which shows an adhesive sheet sticking process. It is a schematic diagram which shows a reflector joining process. It is a schematic diagram which shows a semiconductor light emitting element adhesion | attachment fixing process. It is a schematic diagram which shows a translucent resin filling process. It is a schematic diagram which shows the process of shape | molding a reflector. FIG. 4 is a schematic diagram showing a part of a cross-sectional structure of a surface-mounted light emitting diode according to a second embodiment. 6 is a schematic diagram showing a part of a cross-sectional structure of a surface-mounted light-emitting diode according to Embodiment 3. FIG. FIG. 12 is a perspective view of the surface mount light emitting diode shown in FIG. 11. 10 is a flowchart showing manufacturing steps of the surface-mounted light-emitting diode according to the third embodiment. FIG. 6 is a schematic diagram showing a part of a cross-sectional structure of a surface-mounted light emitting diode according to a fourth embodiment. 10 is a flowchart showing manufacturing steps of the surface-mounted light-emitting diode according to the fourth embodiment. FIG. 10 is a schematic diagram showing a part of a cross-sectional structure of a surface-mounted light emitting diode according to a fifth embodiment. It is a cross-sectional schematic diagram which shows the example of a structure of the conventional surface mount type light emitting diode. It is a perspective view which shows the other example of a structure of the conventional surface mount type light emitting diode.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 Semiconductor light-emitting device, 2 Base member, 3 Insulating layer, 4 Conductor layer, 4a External connection terminal part, 5 Thermal conductive adhesive sheet, 6 Reflector, 7 Translucent resin, 8 Conductive wire, 9 Convex part, 10, 20 , 30, 40, 50 Surface mount type light emitting diode, 11 Plate material, 12 Cutting groove, 13 Through hole, 100 Surface mount type light emitting diode, 101 Chip substrate, 102 LED chip, 103 Frame member, 104 Mold resin, 105 chip mounting land, 106 surface mounting terminal, 107 connection land, 108 conductive pattern, 200 semiconductor light emitting device, 201 lead frame, 202 semiconductor light emitting element, 203 sealing member, 204a, 204b lead terminal, 205 reflector.

Claims (18)

A metal base member;
A semiconductor light emitting element having a back surface bonded and fixed on the base member;
A metal reflector joined to the base member so as to surround the semiconductor light emitting element with an adhesive sheet interposed therebetween,
Electrically connected to the semiconductor light emitting element at a position farther from the semiconductor light emitting element than a position where the reflector is bonded on the surface of the base member, or on a surface not bonded to the base member on the reflector A surface-mounted light-emitting diode in which the conductive layer is formed with an insulating layer interposed.   The surface-mount light-emitting diode according to claim 1, wherein a convex portion having a width smaller than a width of the outer peripheral surface is formed on the outer peripheral surface of the reflector.   The surface-mount light-emitting diode according to claim 1, wherein the base member is made of at least one of Al, Cu, Fe, and Mg or a composite thereof.   The surface-mounted light-emitting diode according to claim 1, wherein the reflector is made of at least one of Al, Cu, Fe, and Mg, or a composite thereof.   The surface-mount light-emitting diode according to claim 1, wherein the adhesive sheet is a heat conductive adhesive sheet. The conductor layer is formed at a position farther from the semiconductor light emitting element than the portion where the reflector is bonded on the surface of the base member,
The surface-mount light-emitting diode according to claim 1, wherein the semiconductor light-emitting element and the conductor layer are electrically connected by a conductive wire. The conductor layer is formed at a position farther from the semiconductor light emitting element than the portion where the reflector is bonded on the surface of the base member,
The semiconductor light emitting element and the conductor layer are electrically connected by one conductive line,
The surface-mount light-emitting diode according to claim 1, wherein the semiconductor light-emitting element and the base member are electrically connected by another conductive line. The conductor layer is formed on the inner peripheral surface of the reflector,
The surface-mount light-emitting diode according to claim 1, wherein the semiconductor light-emitting element and the conductor layer are electrically connected by a conductive wire.   The surface-mounted light-emitting diode according to claim 5, wherein the thermally conductive adhesive sheet is made of at least one of thermally conductive silicone, thermally conductive acrylic, and thermally conductive epoxy, or a composite thereof.   The surface-mount light-emitting diode according to claim 1, comprising a plurality of the semiconductor light-emitting elements.   2. The surface-mount light-emitting diode according to claim 1, wherein an inner peripheral surface of the reflector is formed to be a part of any one of a conical surface, a spherical surface, and a paraboloid.   The surface-mount light-emitting diode according to claim 1, wherein the base member is subjected to a surface treatment of gold plating or silver plating at least on a surface to which the semiconductor light emitting element is bonded and fixed.   2. The external connection terminal portion is formed by performing a surface treatment of gold plating or silver plating on a lower surface side of the base member opposite to an upper surface side to which the semiconductor light emitting element is bonded and fixed. Surface mount type light emitting diode.   The surface-mount light emitting diode according to claim 1, wherein a translucent resin is provided on the base member so as to cover the semiconductor light emitting element and not to contact the reflector.   The surface-mounted light-emitting diode according to claim 14, wherein the translucent resin contains a phosphor that emits light having a long wavelength when excited by light emitted from the semiconductor light-emitting element. A step of sequentially forming an insulating layer and a conductor layer on a part of the surface of the metal base member assembly;
Forming a plurality of through holes and a cutting groove in a metal reflector material;
Forming a reflector by dicing the reflector material along the groove;
A step of joining the reflector on the base member assembly with a heat conductive adhesive sheet interposed therebetween;
Adhering and fixing a plurality of semiconductor light emitting elements on the base member assembly inside the plurality of through-hole portions;
Electrically connecting the semiconductor light emitting element and the conductor layer;
And a step of dicing the base member assembly to divide the base member assembly into surface-mounted light-emitting diodes each having a single base member and a single reflector. Forming a plurality of through holes and a cutting groove in a metal reflector material;
A step of joining the reflector material on a base member assembly made of metal with a heat conductive adhesive sheet interposed therebetween;
A step of sequentially forming an insulating layer and a conductor layer on a part of the surface of the reflector material;
Adhering and fixing a plurality of semiconductor light emitting elements on the base member assembly inside the plurality of through-hole portions;
Electrically connecting the semiconductor light emitting element and the conductor layer;
And a step of dicing the reflector material and the base member aggregate along the groove to divide the reflector material into surface-mounted light-emitting diodes having a single base member and reflector. Forming a plurality of through holes and a cutting groove in a metal reflector material;
Forming a reflector by dicing the reflector material along the groove;
A step of joining the reflector on a metal base member aggregate with a thermally conductive adhesive sheet interposed therebetween;
A step of sequentially forming an insulating layer and a conductor layer on a part of the surface of the reflector; and
Adhering and fixing a plurality of semiconductor light emitting elements on the base member assembly inside the plurality of through-hole portions;
Electrically connecting the semiconductor light emitting element and the conductor layer;
And a step of dicing the base member assembly to divide the base member assembly into surface-mounted light-emitting diodes each having a single base member and a single reflector.

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