JP5057371B2 - Surface mount type light emitting diode and method for manufacturing the same - Google Patents

Description

  The present invention relates to a surface-mounted light emitting diode, and more particularly to a surface-mounted light emitting diode that places importance on heat dissipation, reliability, and productivity, and a method for manufacturing the same.

  A semiconductor light emitting device is a device in which a PN junction is formed on a compound semiconductor wafer such as AlInGaP or GaN, and light emission of visible light or near infrared light is obtained through forward current thereto. In recent years, display, communication, and measurement have been started. Widely applied to control. Furthermore, the range of application has been expanded to the field for vehicles where heat dissipation and reliability are particularly important. Surface mount light emitting diodes that meet these requirements have been developed.

  FIG. 10 is a schematic cross-sectional view showing an example of the configuration of a conventional surface-mounted light emitting diode. As shown in FIG. 10, the surface-mounted light-emitting diode 100 has a semiconductor light-emitting element 103 mounted on a base 101 having an electrode 102, and each electrode of the semiconductor light-emitting element 103 is connected to each base 101 with a conductive wire 104 by wire bonding. The structure is such that a mold member 105 is provided in the base 101 connected to the electrode 102.

  Heat is generated when the semiconductor light-emitting element (LED chip) mounted on the surface-mounted light-emitting diode emits light, but the amount of heat generated increases as the current flowing through the LED chip increases. In general, the higher the temperature of the LED chip, the lower the luminous efficiency of the LED chip, and the more the light deterioration becomes. That is, even if a large current is passed, it will not be bright effectively, and the life of the LED chip will be shortened. Therefore, by effectively releasing the heat generated from the LED chip to the outside and lowering the temperature, it is possible to provide an LED chip with good luminous efficiency and good life characteristics even at high currents.

The conventional semiconductor light-emitting devices with improved heat dissipation effects as described above are described in, for example, Patent Documents 1 to 5. In Patent Documents 1 and 2, the heat dissipation is improved by increasing the surface area of the lead frame, and in Patent Documents 3 to 5, the substrate material is a metal having a higher thermal conductivity than the resin. I am trying.
Japanese Patent Laid-Open No. 11-46018 JP 2002-222998 A JP 2000-58924 A JP 2000-77725 A JP 2000-216443 A

  However, in the conventional surface-mounted light emitting diode 100 shown in FIG. 10, the heat radiation from the semiconductor light emitting element 103 can be received only by the electrode 102, so that the heat radiation is not sufficient. In addition, the reliability was insufficient under severe conditions of environmental resistance (temperature, vibration, etc.) for in-vehicle use. In addition, in order to dispose the phosphor (substance) in the reflector for reflecting the light generated by the semiconductor light emitting element 103, it is necessary to include the phosphor in the mold member 105 that covers the semiconductor light emitting element 103. However, the resin containing the phosphor deteriorates when exposed to a high temperature due to heat generation of the semiconductor light emitting element in the vicinity of the semiconductor light emitting element 103, and thus the lifetime as a light source is shortened.

  Therefore, a main object of the present invention is to provide a surface mount type light emitting diode excellent in heat dissipation, reliability and productivity, and a method for manufacturing the same.

A surface-mount light-emitting diode according to the present invention includes a metal base member having a flat surface, an opposite surface opposite to the surface, and an outer peripheral surface on which at least one convex portion is formed. . In addition, a semiconductor light emitting device having a back surface bonded and fixed on the surface of the base member is provided. In addition, a metal reflector is provided that has an outer peripheral surface that is bonded to the surface of the base member with an adhesive sheet interposed therebetween so as to surround the semiconductor light emitting element, and has at least one convex-shaped portion formed thereon. The convex portion has a width smaller than the width of the outer peripheral surface of the base member and is formed away from the opposite surface. The convex portion has a width smaller than the width of the outer peripheral surface of the reflector. The outer peripheral surface of the base member and the outer peripheral surface of the reflector are on the same plane. The tip of the convex part and the tip of the convex part are on the same plane.

  In this case, the heat generated from the semiconductor light emitting element is directly conducted to the base member and is radiated to the outside through the base member because the semiconductor light emitting element is directly bonded and fixed on the base member. Part of the heat is conducted to the reflector through the adhesive sheet, and is radiated from the reflector to the outside. Since both the base member and the reflector are made of metal, the heat generated from the semiconductor light emitting element can be efficiently radiated to the outside, and the light generated from the semiconductor light emitting element can be efficiently emitted to the outside.

  The base member and the reflector may be formed by combining a plurality of metals, for example, another metal is laminated on the surface of the metal material by plating, but can be easily manufactured if formed as a single body. It is more preferable because productivity can be improved. In addition, if the base member and the reflector are made of a single metal, no partition or separation groove made of an insulating member with low reflectivity is formed for insulation between the positive electrode and the negative electrode. This is preferable because a decrease in reflectance of light generated from the element can be avoided. When formed as a single metal member, the material of the base member and the reflector is not limited to a single metal but may be an alloy.

  At this time, since the base member is made of metal, dicing becomes difficult if the base member is thick. Therefore, in the step of forming the base member from the plate material, if a region thinner than the thickness of the plate material is provided as a cutting margin, and dicing along the cutting margin, dicing can be performed more easily. Therefore, productivity can be improved without reducing the yield of the surface-mounted light emitting diode. The cutting margin after dicing becomes a convex portion having a dimension in the direction smaller than the dimension in the thickness direction of the base member on the outer peripheral surface of the base member. If the convex part is formed, the surface area of the base member increases, and therefore heat can be radiated more efficiently.

If the convex portion of the multiple is only be formed in the base member, the surface area of the base member is increased more, can be radiated more efficiently.

Li Furekuta are the metal similar to the base member, when provided in the wall thickness becomes dicing difficult. Therefore, in the step of forming the reflector from the plate material, if a region thinner than the thickness of the plate material is provided as a cutting margin, and dicing along the cutting margin, dicing can be performed more easily. Therefore, the productivity of the surface mount type light emitting diode can be improved. The cutting margin after dicing becomes a convex-shaped portion having a dimension in the direction smaller than the dimension in the thickness direction of the reflector (that is, the width of the outer circumferential surface of the reflector) on the outer peripheral surface of the reflector. If the convex portion is formed, the surface area of the reflector increases, so that heat can be radiated more efficiently. If the plurality of convex portions are formed on the reflector, the surface area of the reflector is further increased, so that heat can be radiated more efficiently.

  The base member is preferably made of at least one of Al, Cu, Fe, Mg, or a composite thereof. Since these materials have high thermal conductivity, it is possible to provide a base member with good heat dissipation to the outside of the heat generated from the semiconductor light emitting element. Also, these materials are easy to manufacture because of their good workability. Furthermore, part of the light generated from the semiconductor light emitting element is reflected by the base member and is efficiently emitted to the outside, so that light leaking toward the lower portion of the base member can be extremely reduced.

  The reflector is preferably made of at least one of Al, Cu, Fe, and Mg, or a composite thereof. Since these materials have high thermal conductivity, it is possible to provide a reflector with good heat dissipation to the outside of the heat generated from the semiconductor light emitting element. Also, these materials are easy to manufacture because of their good workability. Furthermore, the light generated from the semiconductor light emitting element can be reflected by the reflector and efficiently emitted to the outside.

  The adhesive sheet is preferably made of at least one of thermally conductive silicone, thermally conductive acrylic, and thermally conductive epoxy, or a composite (multilayer body) obtained by stacking them in layers. These materials have a relatively high thermal conductivity (for example, 1.0 W / m · K or more), which is a value representing the ease of heat transfer in one substance. Therefore, heat generated from the semiconductor light emitting element and conducted to the base member is easily conducted to the reflector, and heat can be radiated more efficiently. In addition, since the reflector can be bonded to the base member with the heat conductive adhesive sheet, it is easy to manufacture the surface mount type light emitting diode. Here, the heat conductive adhesive sheet is filled with a heat conductive filler, and can be configured to use silicon oxide, aluminum oxide, magnesium oxide, aluminum hydroxide, or the like having good heat conductivity as a filler. In addition, as a heat conductive adhesive sheet, a structure in which a heat conductive adhesive, an aluminum foil, and a heat conductive adhesive are sequentially laminated, and a structure in which a heat conductive adhesive, a heat conductive compound, and a heat conductive adhesive are sequentially laminated Conceivable.

  Further, it is desirable that the inner peripheral surface of the reflector is formed to be a part of any one of a conical surface, a spherical surface, and a paraboloid. In this case, light generated from the semiconductor light emitting element can be efficiently emitted.

  In addition, it is desirable that the base member is subjected to gold plating or silver plating at least on the surface to which the semiconductor light emitting element is bonded and fixed. In this case, bonding for bonding and fixing the semiconductor light emitting element to the base member is good. Moreover, silver plating has a high light reflectance, and the external extraction efficiency of the light radiated | emitted from the semiconductor light-emitting element to the base member improves.

  Moreover, it is desirable that the conductor layer is formed with an insulating layer interposed on the surface of the reflector that is not joined to the base member. In this case, alteration of the conductor layer can be suppressed. In addition, when the electrode electrically connected to the semiconductor light emitting element by the conductive wire is not on the inner peripheral surface of the reflector, the light generated by the semiconductor light emitting element is unidirectionally on the inner peripheral surface of the reflector and the upper surface of the base member. It becomes easy to be reflected. Therefore, the light radiation efficiency which radiates | emits light outside can be improved.

  The conductor layer is preferably electrically connected to the semiconductor light emitting element. In this case, the size of the reflector can be reduced. If the size of the reflector is small, the distance between the inner peripheral surface of the reflector and the semiconductor light emitting element is shortened, so that the light generated by the semiconductor light emitting element is more easily reflected in the upper surface direction, and the light is emitted more efficiently to the outside. And light reflection efficiency can be improved. Further, the shape of bright spot light emission can be easily produced, and it is suitable for applications that require bright spot light emission. Further, if the reflector is miniaturized, the heat generated by the semiconductor light-emitting element is easily conducted to the reflector, and the heat is easily released from the reflector to improve the heat dissipation.

  In addition, it is desirable that a surface that is not joined to the base member on the reflector is subjected to a surface treatment of gold plating or silver plating to form an external connection terminal portion. In this case, alteration of the external connection terminal portion can be suppressed.

  Moreover, it is desirable that a translucent resin is provided on the base member so as to cover the semiconductor light emitting element. In this case, the light-transmitting resin can cover the semiconductor light emitting element and shield it from the outside air to protect the circuit.

  The translucent resin is preferably provided so as not to contact the reflector. In this case, there is no problem that the translucent resin is peeled off from the reflector due to expansion and contraction of the translucent resin due to heat conduction from the semiconductor light emitting element to the translucent resin. Since the base member does not expand and contract and the translucent resin does not peel off from the reflector, the failure rate of the surface-mounted light-emitting diode can be reduced and the reliability can be improved. Further, the base member and the reflector can be made of materials having different thermal expansion coefficients.

  Moreover, it is desirable that the translucent resin contains a phosphor that emits light having a longer wavelength than the light emitted from the semiconductor light emitting element when excited by the light emitted from the semiconductor light emitting element. For example, the semiconductor light emitting device is a blue semiconductor light emitting device made of a gallium nitride compound semiconductor, and the translucent resin is a phosphor that emits yellow light when excited by light emitted from the blue semiconductor light emitting device. It is desirable to contain. According to this configuration, a white light source can be obtained. The semiconductor light emitting element may be a ZnO (zinc oxide) based compound semiconductor or a semiconductor light emitting element that emits near-ultraviolet light.

A method for manufacturing a surface-mounted light-emitting diode according to the present invention includes a step of forming a plurality of through-hole portions and a cutting groove in a metal reflector material. Further, the method includes a step of sequentially forming an insulating layer and a conductor layer on a part of the surface of the reflector material. Moreover, the process of forming the recessed part of the same planar shape as the groove | channel formed in the reflector raw material on the surface and back surface of a metal base member aggregate | assembly is provided. Further, the method includes a step of bonding and fixing a plurality of semiconductor light emitting elements to the surface of the base member assembly. In addition, a heat conductive adhesive sheet is interposed on the surface of the base member assembly so that the plurality of semiconductor light emitting elements are arranged inside the plurality of through holes, and the grooves and the recesses overlap. And a step of joining the reflector. Moreover, the process of electrically connecting a semiconductor light-emitting device and a conductor layer is provided. A single surface having a base member having a convex portion formed on the outer peripheral surface and a reflector having a convex portion formed on the outer peripheral surface by cutting the reflector material and the base member aggregate along the groove in the thickness direction. A step of dividing into mounting type light emitting diodes.

According to this manufacturing method, since the base member with the convex portion formed on the outer peripheral surface and the reflector with the convex portion formed on the outer peripheral surface are made of metal, the heat generated from the semiconductor light emitting element is efficiently radiated to the outside. In addition, light generated from the semiconductor light emitting element can be efficiently emitted to the outside. Metallic base member and the reflector is when provided in the wall thickness cut in the thickness direction becomes difficult, recess is formed in the base member, by the groove for cutting the reflector material is formed, in a thickness direction Cutting becomes easy. Therefore, productivity can be improved without reducing the yield of the surface-mounted light emitting diode.

  Embodiments of the present invention will be described below with reference to the drawings. In the following drawings, the same or corresponding parts are denoted by the same reference numerals, and description thereof will not be repeated.

(Embodiment 1)
1 is a perspective view showing a configuration of a surface-mounted light-emitting diode according to Embodiment 1 of the present invention. FIG. 2 is a schematic diagram showing a cross-sectional structure taken along line II-II shown in FIG. As shown in FIGS. 1 and 2, the surface-mounted light emitting diode 20 includes a semiconductor light emitting element 1, a base member 2 having a protrusion 10, an insulating layer 3, a conductor layer 4, a heat conductive adhesive sheet 5, and a protrusion 9. It is comprised from the reflector 6 which has this, the fluorescent substance containing translucent resin 7, the conductive wire 8, and the external connection terminal part 81,82.

  The base member 2 is made of a metal having high thermal conductivity such as Al, Cu, Fe, and Mg, and is formed in a plate shape. The back surface of the semiconductor light emitting element 1 is bonded and fixed on the base member 2. The base member 2 has the convex part 10 which is the remainder of the cut used for making dicing easy in an outer peripheral surface. The convex portion 10 has a width smaller than the width of the outer peripheral surface of the base member 2. The said width | variety shows the dimension in the direction (namely, thickness direction of the base member 2) perpendicular | vertical to the upper surface (surface where the semiconductor light-emitting device 1 is adhere | attached and fixed) of the base member 2. That is, in the cross section of the base member 2, as shown in FIG. 2, the dimension of the convex portion 10 in the thickness direction of the base member 2 (vertical direction in FIG. 2) is smaller than the thickness of the base member 2.

  A heat conductive adhesive sheet 5 is laminated on a partial region of the upper surface of the base member 2, and a reflector 6 is provided on the heat conductive adhesive sheet 5. That is, as shown in FIG. 2, the reflector 6 is bonded to the upper surface of the base member 2 with the heat conductive adhesive sheet 5 interposed so as to surround the semiconductor light emitting element 1.

  The reflector 6 is made of a metal having high thermal conductivity such as Al, Cu, Fe, or Mg, and is formed in a mortar shape having a minimum inner diameter of about 2 mm and a maximum inner diameter of about 3 mm, for example. Moreover, the reflector 6 has the convex part 9 which is the remainder of the cutting margin used in order to make dicing easy in an outer peripheral surface. The convex portion 9 has a width smaller than the width of the outer peripheral surface of the reflector 6. The said width | variety shows the dimension in the thickness direction of the reflector 6. FIG. That is, in the cross section of the reflector 6, as shown in FIG. 2, the dimension of the convex portion 9 in the thickness direction of the reflector 6 (vertical direction in FIG. 2) is smaller than the thickness of the reflector 6.

  The inner peripheral wall of the reflector 6 is mirror finished. Here, the inner peripheral surface of the reflector 6 is the surface of the reflector 6 facing the semiconductor light emitting element 1 surrounded by the reflector 6. Since the reflector 6 has a mortar shape and its inner peripheral wall is mirror-finished, the light generated from the semiconductor light emitting element 1 is reflected by the reflector 6 and efficiently emitted to the outside. A part of the light generated from the semiconductor light emitting element 1 is emitted toward the base member 2, but since the base member 2 is also made of metal, the light is reflected on the upper surface of the base member 2, and the light is exposed to the outside. It is released efficiently. That is, the amount of light leaking from the lower surface side of the base member 2 is extremely small.

  The insulating layer 3 is laminated on the upper surface, which is the surface of the reflector 6 that is not joined to the base member 2. A conductor layer 4 serving as a metal wiring pattern conductor is laminated on the surface of the insulating layer 3. The reflector 6 and the conductor layer 4 (that is, the base member 2 and the conductor layer 4 to which the semiconductor light emitting element 1 is bonded and fixed) are electrically insulated by the insulating layer 3. The electrode of the semiconductor light emitting element 1 is electrically connected to the conductor layer 4 by a conductive wire 8.

  If the conductor layer 4 functions to supply current to the semiconductor light emitting element 1 from the outside by connecting to the external connection terminal portions 81 and 82 on the upper surface, for example, a circuit for causing the surface mounted light emitting diode 20 to emit light Can be formed. The conductor layer 4 and the external connection terminal portions 81 and 82 are covered with a silver film on the surface, and therefore, the alteration of the conductor layer 4 and the external connection terminal portions 81 and 82 is suppressed.

  Further, inside the reflector 6 on the upper surface of the base member 2, a silicone resin is filled as a translucent resin 7 that is a resin material having a property that light can travel inside the material. It is covered with a translucent resin 7. The translucent resin 7 contains a phosphor that emits yellow light when excited by light from the semiconductor light emitting element 1 and holds the phosphor in a dispersed manner. Here, the phosphor is a substance that emits (emits) visible light having a different wavelength when irradiated with electromagnetic waves having a specific wavelength (for example, visible light, ultraviolet light, X-ray, electron beam, etc.).

  The semiconductor light emitting device 1 is a blue semiconductor light emitting device made of a gallium nitride compound semiconductor, and the P and N electrodes are on the same surface (in this case, the surface opposite to the back surface bonded to the base member 2; It is formed in a chip shape on the upper surface side shown in FIG. When the semiconductor light emitting element 1 emits light, blue light is emitted. At this time, a white color is obtained by mixing the yellow light obtained by absorbing the blue light in the phosphor dispersed and held in the translucent resin 7 and the blue light not absorbed by the phosphor. Can be obtained. If a plurality of the semiconductor light emitting elements 1 are mounted on the base member 2 by being bonded and fixed, a higher output light source can be obtained. The shape of the translucent resin 7 may be formed in a convex lens shape that rises toward the side away from the surface of the base member 2. Here, blue light refers to light having an emission peak wavelength of 350 nm or more and 490 nm or less. The yellow light means light having a longer wavelength than the blue light having a peak emission wavelength of 550 nm to 650 nm.

  Here, the translucent resin 7 and the reflector 6 are not in contact. Therefore, the heat generated from the semiconductor light emitting element 1 causes expansion and contraction of the translucent resin 7, so that the problem that the translucent resin 7 is peeled off from the reflector 6 does not occur, and the failure of the surface mount light emitting diode 20 occurs. The rate can be reduced and the reliability can be improved. Moreover, the base member 2 and the reflector 6 can be comprised with the material from which a thermal expansion coefficient differs.

  FIG. 3 is a schematic diagram showing conduction of heat generated by the semiconductor light emitting device. In FIG. 3, arrows a, b, c, d, e, and f indicate heat conduction. As shown in FIG. 3, the heat generated by the semiconductor light emitting element 1 is directly conducted to the base member 2 as indicated by arrows a and b because the semiconductor light emitting element 1 is bonded and fixed directly on the base member 2. Is done. A part of the heat conducted to the base member 2 is radiated to the outside through the convex portion 10 of the base member 2 as indicated by arrows e and f, and a part of the heat is thermally conductively adhered as indicated by arrows b and c. Conducted through the sheet 5 to the reflector 6. The heat conducted to the reflector 6 is radiated from the convex portion 9 to the outside as indicated by an arrow d.

  Since the base member 2 and the reflector 6 are both made of metal having high thermal conductivity, the surface-mounted light-emitting diode 20 with good heat dissipation that can efficiently radiate the heat generated from the semiconductor light-emitting element 1 to the outside is configured. can do. A convex portion 10 is formed on the base member 2, and a convex portion 9 is formed on the reflector 6, and the surface areas of the base member 2 and the reflector 6 are increased. Therefore, heat can be radiated more efficiently.

  Further, since the reflector 6 is joined to the base member 2 with the heat conductive adhesive sheet 5 interposed therebetween, heat is easily conducted to the reflector 6, and the heat generated from the semiconductor light emitting element 1 is more efficiently radiated to the outside. be able to. Needless to say, a thermally conductive adhesive sheet 5 having good thermal conductivity is used. For example, the thermally conductive adhesive sheet 5 is any one of thermally conductive silicone, thermally conductive acrylic, thermally conductive epoxy, or the like. A composite body (multilayer body) obtained by stacking layers in layers can be used.

  Since heat generated from the semiconductor light emitting element 1 can be efficiently radiated to the outside, the temperature of the semiconductor light emitting element 1 is lowered, and the temperature of the translucent resin 7 covering the semiconductor light emitting element 1 is also kept low. Therefore, deterioration due to the phosphor dispersed and held in the translucent resin 7 being exposed to the high temperature of the semiconductor light emitting element 1 is suppressed. As a result, the life of the surface-mounted light emitting diode 20 can be extended. In addition, color variations generated from the surface-mounted light emitting diode 20 can be suppressed.

  The phosphors dispersed and held in the translucent resin 7 are YAG (yttrium aluminum garnet), BOS (Barium Ortho-Silicate), and TAG (terbium aluminum garnet) to which gadolinium and cerium are added. ) At least one kind. In order to obtain white light, the translucent resin 7 needs to contain a phosphor. However, as the surface-mounted light-emitting diode 20, only the translucent resin 7 not containing the phosphor emits semiconductor light. Needless to say, the element 1 may be sealed. It is desirable that the translucent resin 7 is at least one of a silicone resin, an epoxy resin, an acrylic resin, a fluorine resin, a polyimide resin, a silicone deformed epoxy resin, or a composite thereof. Since a part of the heat generated from the semiconductor light emitting element 1 is radiated to the outside through the translucent resin 7, the translucent resin 7 has good heat dissipation (for example, thermal conductivity of 0.3 W / mK or more). More preferred.

  Further, the light generated from the semiconductor light emitting element 1 is efficiently emitted to the outside because the reflector 6 is made of metal. Since the reflector 6 is a metal integral body and does not require Al deposition or metal plating for increasing the reflectivity as a reflective layer on the inner peripheral surface, which is a surface that reflects light in the reflector 6, it can be manufactured. It becomes easy. Further, since the base member 2 and the reflector 6 are produced simply by bonding them with the heat conductive adhesive sheet 5, the production is facilitated.

  Next, a manufacturing procedure of the surface mount light emitting diode 20 shown in FIGS. 1 and 2 will be described. FIG. 4 is a flowchart showing a manufacturing process of the surface-mounted light emitting diode. FIG. 5 is a diagram for explaining each step of the method for manufacturing the surface-mounted light-emitting diode shown in FIG. As shown in FIG. 4, first, in a step (S10), a metal plate having a thickness of 1 mm is prepared as a base member assembly. Next, in step (S20), the base member assembly is embossed in a direction to be crushed from above using an embossing die, and an upper surface that is a surface to which a semiconductor light emitting element is bonded and fixed in a subsequent step; A recess 14 is formed on the lower surface on the opposite side. The recess 14 is formed along two orthogonal directions on the surface of the base member assembly. The recess 14 is formed to have a depth of 0.3 mm on the upper and lower surfaces of the base member assembly. Here, the base member aggregate is a material formed into the base member 2 by dicing (cutting), and as will be described later, each of the semiconductor light emitting element 1 for bonding and fixing, wire bonding, and resin sealing After the process, the base member 2 is cut and separated.

  Next, in step (S30), as shown in FIG. 5A, the semiconductor light emitting element 1 is bonded and fixed (mounted) to the upper surface of the base member assembly with a silicone resin as a transparent resin. The transparent resin may be, for example, an epoxy resin or an acrylic resin. Next, in step (S40), as shown in FIG. 5A, sheet-like thermally conductive acrylic (thickness 0.1 mm) as the thermally conductive adhesive sheet 5 is formed on the upper surface side of the base member assembly. Affix it.

  On the other hand, the reflector material is formed in steps (S110) to (S150). First, in step (S110), a metal plate having a thickness of 0.8 mm is prepared. Next, in the step (S120), the through-hole portion 13 and the cutting groove 12 are formed in the plate material by a double-side embossing method in the direction of crushing from above using an embossing die. The cutting groove 12 is formed along two orthogonal directions on the surface of the reflector material. Here, the through-hole portion 13 is formed so as to be a part of a conical surface. In the cross section shown in FIG. 5A, the diameter of the through-hole portion 13 decreases from the upper side to the lower side in the drawing. It has become. The cutting groove 12 is an area thinner than the plate material 11. The cutting groove 12 is formed to have a depth of 0.3 mm on the upper and lower surfaces of the plate material.

  Next, in a step (S130), a silicon dioxide layer (thickness 0.05 mm) as the insulating layer 3 is laminated in a planar shape on the upper surface of the reflector material by a CVD (Chemical Vapor Deposition) method. The insulating layer 3 can also be formed by sputtering, for example. Subsequently, in the step (S140), a copper thin film (thickness: 0.035 mm) as a metal wiring pattern conductor formed on the surface of the insulating layer 3 using electroplating, and further a silver thin film (using silver plating) A conductor layer 4 having a thickness of 0.005 mm) is laminated. The metal wiring pattern conductor can also be formed by, for example, a CVD method, a sputtering method, or a thermal oxidation method. Since the surface of the conductor layer 4 is silver-plated and covered with a silver thin film, the alteration of the conductor layer 4 is suppressed. Simultaneously with the lamination of the conductor layer 4, the external connection terminal portions 81 and 82 are also formed on the upper surface of the reflector material. In this way, a plate-shaped reflector material is completed in the step (S150). The reflector material has a plate shape extending in a direction perpendicular to the paper surface of FIG. 5A, and a plurality of members formed on the reflector 6 by being diced in a later process are combined. It is.

  Next, in a process (S50), as shown in FIG.5 (b), a reflector raw material is joined on the heat conductive adhesive sheet 5. FIG. At this time, the reflector material is arranged so that the cutting groove 12 and the recess 14 overlap each other. In addition, the reflector material is bonded to the base member assembly so that the semiconductor light emitting element 1 is disposed inside the through hole portion 13 formed as a partial shape of the conical surface. Therefore, a partial shape of the conical surface becomes the inner peripheral surface of the reflector 6, so that the light generated from the semiconductor light emitting element 1 can be efficiently emitted to the outside.

  Subsequently, in the step (S60), each electrode of the semiconductor light emitting element 1 and the bonding pad of the corresponding conductor layer 4 are connected by wire bonding using a conductive wire (lead wire) 8. Thereafter, in step (S70), translucent resin 7 (eg, silicone resin) containing a BOS phosphor is filled into reflector 6 using a dispenser.

  Next, in the step (S80), the reflector material and the base member aggregate are diced along the dicing line 15 shown in FIG. That is, the reflector material is diced along the cutting groove 12, and the base member assembly is diced along the recess 14. Therefore, the cut width of the reflector material and the base member aggregate is small, and dicing can be easily performed. Therefore, since the occurrence of defective products in the dicing process can be suppressed, the yield of the surface-mounted light emitting diode 20 is not lowered, and the productivity can be improved.

  Dicing is also performed in a direction orthogonal to the dicing line shown in FIG. That is, FIG. 5B is a cross-sectional view showing one cross section of the reflector material and the base member assembly. In practice, the reflector material and the base member assembly are in a direction perpendicular to the paper surface of FIG. It also extends. The recess 14 and the cutting groove 12 are formed along two orthogonal directions on the surfaces of the base member assembly and the reflector material, respectively. Therefore, a single surface-mounted light-emitting diode 20 is obtained by performing dicing in any of two orthogonal directions, the dicing line shown in FIG. 5B and the direction orthogonal to the dicing line. .

  In this way, in the step (S90), a single surface-mounted light-emitting diode 20 having a single base member 2 and a reflector 6 as shown in FIG. 5C is manufactured. On the base member 2, a convex portion 10 is formed as the remainder of the cut edge after being divided along the concave portion 14 in the dicing in the step (S80). The convex portion 10 has a dimension in a direction perpendicular to the surface of the base member 2 on which the semiconductor light emitting element 1 is mounted (that is, the thickness direction of the base member 2 and the vertical direction in FIG. 5C). 0.4 mm. Further, the reflector 6 is formed with a convex portion 9 as a remainder of the cut after being cut along the cutting groove 12 in the dicing in the step (S80). The dimension of the convex part 9 in the direction perpendicular to the surface of the base member 2 on which the semiconductor light emitting element 1 is mounted is 0.2 mm.

  In the first embodiment, the semiconductor light emitting device 1 is formed in a chip shape having P and N electrodes on the same surface. However, the present invention is not limited to this structure, and is formed in a chip shape having P and N electrodes on both sides. It may be a structure. In the case where the semiconductor light emitting element 1 has an electrode on the back surface side on the side in contact with the base member 2, the surface treatment of gold plating or silver plating is performed on the surface of the base member 2 to which the semiconductor light emitting element 1 is bonded and fixed. If applied, the bonding for fixing the semiconductor light emitting element 1 to the base member 2 will be good. In the case of silver plating, the light reflectance is high and the efficiency of extracting light outside the light is improved. Further, the substrate of the semiconductor light emitting element 1 may be either an insulator or a conductor. Needless to say, the semiconductor light emitting device 1 is not limited to a gallium nitride-based compound semiconductor, and may use a ZnO (zinc oxide) -based compound semiconductor, an InGaAlP-based, or an AlGaAs-based compound semiconductor. In any of these structures, the semiconductor light emitting element 1 can be mounted on the base member 2.

  Furthermore, a plurality of semiconductor light emitting elements 1 can be mounted on the base member 2. If a plurality of semiconductor light emitting elements 1 of the same color are mounted, a high output light source can be obtained. For example, if one or the same number of semiconductor light emitting elements such as blue, green, red, and near-ultraviolet LED chips are mounted, white or other colors can be adjusted by adjusting the current distribution to each LED chip. It goes without saying that possible light sources can be obtained.

(Embodiment 2)
FIG. 6 is a schematic diagram showing a part of a cross-sectional structure of the surface-mounted light-emitting diode according to the second embodiment. The surface-mounted light-emitting diode 30 according to the second embodiment and the surface-mounted light-emitting diode 20 according to the first embodiment described above basically have the same configuration. However, the second embodiment is different from the third embodiment in that the structure of the insulating layer 3 and the conductor layer 4 is configured as shown in FIG.

  Specifically, the base member 2 constituting the surface mount type light emitting diode 30 is made of copper having a thickness of 1.2 mm. The reflector 6 is formed from a metal plate having a thickness of 0.6 mm. On the upper surface and inner peripheral surface of the reflector 6, which is a surface other than the surface in contact with the base member 2 with the thermally conductive adhesive sheet 5 (thickness 0.08 mm) interposed, the insulating layer 3 ( A conductor layer 4 (thickness 0.05 mm) is laminated with a thickness 0.03 mm interposed. The semiconductor light emitting element 1 and the conductor layer 4 are electrically connected by a conductive wire 8.

  During the manufacture of the surface-mounted light emitting diode 30 shown in FIG. 6, the recesses formed in the base member assembly are formed to a depth of 0.35 mm on the upper and lower surfaces of the base member assembly. Further, the cutting grooves formed in the reflector material are formed to have a depth of 0.1 mm on the upper and lower surfaces of the plate material. Thus, the convex part 10 of the base member 2 is formed so that the dimension in the direction perpendicular to the surface of the base member 2 on which the semiconductor light emitting element 1 is mounted is 0.5 mm. The convex portion 9 of the reflector 6 is formed so that the dimension in the direction perpendicular to the surface of the base member 2 on which the semiconductor light emitting element 1 is mounted is 0.4 mm.

  Other configurations and manufacturing procedures of the surface-mounted light-emitting diode 30 are as described in the first embodiment, and thus description thereof will not be repeated.

(Embodiment 3)
FIG. 7 is a schematic diagram showing a part of a cross-sectional structure of the surface-mounted light-emitting diode according to the third embodiment. The surface-mounted light-emitting diode 40 of the third embodiment and the surface-mounted light-emitting diode 20 of the first embodiment described above basically have the same configuration. However, the third embodiment is different from the first embodiment in that the structure of the semiconductor light emitting element 1 and the conductive wire 8 is configured as shown in FIG.

  Specifically, the reflector 6 constituting the surface-mounted light emitting diode 30 is formed in a mortar shape having a minimum inner diameter of about 2 mm and a maximum inner diameter of about 2.4 mm, for example, by an aluminum plate having a thickness of 0.6 mm. The reflector 6 is in contact with the base member 2 with a heat conductive adhesive sheet 5 (thickness 0.15 mm) interposed therebetween. On the upper surface of the reflector 6, the conductor layer 4 (thickness 0.03 mm) is laminated with the insulating layer 3 (thickness 0.04 mm) interposed.

  The semiconductor light emitting device 1 is formed in a chip shape having P and N electrodes on both surfaces (upper and lower surfaces shown in FIG. 7), and is bonded and fixed to the base member 2 with a silver paste 41 interposed therebetween. The electrode on the upper surface side opposite to the surface on which the semiconductor light emitting element 1 is bonded and fixed to the base member 2 and the bonding pad of the conductor layer 4 are electrically connected by a conductive wire 8. The base member 2 and the bonding pad of the conductor layer 4 are electrically connected by a conductive wire 8.

  At the time of manufacturing the surface-mounted light emitting diode 40 shown in FIG. 7, the recesses formed in the base member assembly having a thickness of 1 mm are formed to have a depth of 0.25 mm on the upper and lower surfaces of the base member assembly. . Further, the cutting grooves formed in the reflector material are formed to have a depth of 0.2 mm on the upper and lower surfaces of the plate material. Thus, the convex part 10 of the base member 2 is formed so that the dimension in the direction perpendicular to the surface of the base member 2 on which the semiconductor light emitting element 1 is mounted is 0.5 mm. The convex portion 9 of the reflector 6 is formed so that the dimension in the direction perpendicular to the surface of the base member 2 on which the semiconductor light emitting element 1 is mounted is 0.2 mm.

  Since other configurations and manufacturing procedures of the surface-mounted light emitting diode 40 are as described in the first embodiment, the description thereof will not be repeated.

(Embodiment 4)
FIG. 8 is a perspective view showing a configuration of the surface-mounted light-emitting diode according to the fourth embodiment. The surface-mounted light-emitting diode 50 of the fourth embodiment and the surface-mounted light-emitting diode 20 of the first embodiment described above basically have the same configuration. However, the fourth embodiment is different from the first embodiment in that the structure of the convex portions 9 and 10 is configured as shown in FIG.

  Specifically, the protrusion 10 formed on the base member 2 has a dimension in the direction perpendicular to the surface of the base member 2 on which the semiconductor light emitting element 1 is mounted of 0.5 mm. Further, the projection 9 formed on the reflector 6 has a dimension of 0.3 mm in a direction perpendicular to the surface of the base member 2 on which the semiconductor light emitting element 1 is mounted. As for the convex parts 9 and 10, the outer peripheral surface is formed in uneven | corrugated shape. Thus, the surface area of the convex parts 9 and 10 can be increased because the outer peripheral surfaces of the convex parts 9 and 10 are formed in an uneven shape. For this reason, since the heat radiation area of the convex parts 9 and 10 also increases, it is advantageous for heat radiation generated from the semiconductor light emitting element 1 to the outside. The concavo-convex shape shown in FIG. 8 can be formed by cutting a metal by laser processing (for example, using a carbon dioxide laser). This is because laser processing is usually a method of melting and cutting with heat, and the cut surface has an uneven shape. Further, for example, in dicing, by applying a force in the left and right (lateral) direction, the uneven shape can be obtained by a method of forming unevenness on the dicing surface. Further, for example, the concave and convex shape can be formed by performing a half dicing, forming a dicing groove only in half, and then cutting by applying a mechanical force so as to bend.

  Since the other configuration and manufacturing procedure of the surface-mounted light emitting diode 50 are as described in the first embodiment, the description thereof will not be repeated.

(Embodiment 5)
FIG. 9 is a perspective view showing the configuration of the surface-mounted light-emitting diode according to the fifth embodiment. The surface-mounted light-emitting diode 60 of the fifth embodiment and the surface-mounted light-emitting diode 20 of the first embodiment described above basically have the same configuration. However, the fourth embodiment is different from the first embodiment in that the structure of the convex portion 10 is configured as shown in FIG.

  Specifically, the protrusion 10 formed on the base member 2 has a dimension in the direction perpendicular to the surface of the base member 2 on which the semiconductor light emitting element 1 is mounted of 0.3 mm. Further, the projection 9 formed on the reflector 6 has a dimension of 0.3 mm in a direction perpendicular to the surface of the base member 2 on which the semiconductor light emitting element 1 is mounted. The convex portions 10 are formed at two locations on the outer peripheral surface of the base member 2. That is, the two base members 2 in which the convex portions 10 are formed on the outer peripheral surface are stacked with the heat conductive adhesive sheet 5 interposed therebetween to constitute the surface mount type light emitting diode 60. Thus, the surface area of the convex parts 9 and 10 can be increased by forming the convex part 9 and the two convex parts 10. For this reason, since the heat radiation area of the convex parts 9 and 10 also increases, it is advantageous for heat radiation generated from the semiconductor light emitting element 1 to the outside.

  Other configurations and manufacturing procedures of the surface-mounted light-emitting diode 60 are as described in the first embodiment, and thus description thereof will not be repeated.

  In the description of the first to fifth embodiments, an example is described in which the base member 2 and the reflector 6 are created using a single metal plate as a raw material. A plurality of metals may be combined and formed, for example, by laminating metals by plating. For example, a plating layer made of silver plating, nickel plating, nickel-chrome plating, or the like can be formed on the inner peripheral surface of the reflector 6. If the plating layer is formed, the light generated from the semiconductor light emitting element 1 can be emitted to the outside of the reflector 6 more efficiently. As the metal material forming the base member 2 and the reflector 6, Al, Cu, Fe, Mg, etc. excellent in heat dissipation and workability can be used, or a composite thereof can be used. When the base member 2 and the reflector 6 are formed as a single body, the material of the base member 2 and the reflector 6 is not limited to a single metal and may be an alloy.

  With respect to the shapes of the base member 2 and the reflector 6, portions other than the upper surface of the base member 2 and the inner peripheral surface of the reflector 6 that are light reflecting surfaces may be provided in a concavo-convex shape so as to have a shape like a radiating fin. In this way, heat dissipation from the base member 2 and the reflector 6 to the outside is further promoted, so that the heat dissipation can be further improved. The light reflecting surface of the reflector 6 is not limited to a conical surface, and the reflector 6 may be formed so as to be, for example, a spherical surface or a part of a paraboloid. In this case, the light generated from the semiconductor light emitting element 1 is efficiently used. Can release well.

  The insulating layer 3 can be configured by adhering silicon dioxide, acrylic rubber, epoxy, silicone, polyimide, or the like to the reflector 6 and the conductor layer 4 with a heat conductive adhesive interposed therebetween.

  The heat conductive adhesive sheet 5 may be in contact with the translucent resin 7. For example, in the surface-mounted light-emitting diode 20 shown in FIG. 2, if the heat conductive adhesive sheet 5 is formed also inside the inner peripheral wall of the reflector 6, the heat conductive adhesive sheet 5 and the translucent resin 7 are used. Can be contacted. In this case, the heat dissipated in the translucent resin 7 can be conducted to the reflector 6 through the heat conductive adhesive sheet 5. Therefore, the heat generated by the semiconductor light emitting element 1 can be radiated to the outside more efficiently.

  Furthermore, you may form the reflector 6 in the shape which increases the area which the heat conductive adhesive sheet 5 and the reflector 6 have joined. For example, the reflector 6 can be formed into a shape having irregularities or a shape having fine notches in a sawtooth shape at the joint portion with the heat conductive adhesive sheet 5. If it does in this way, the heat conduction from the heat conductive adhesive sheet 5 to the reflector 6 will improve. Therefore, the heat generated by the semiconductor light emitting element 1 can be radiated to the outside more efficiently. Moreover, the joining strength of the reflector 6 can be improved.

  The embodiment disclosed this time is to be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

It is a perspective view which shows the structure of the surface mount type light emitting diode which concerns on Embodiment 1 of this invention. It is a schematic diagram which shows the cross-sectional structure in the II-II line | wire shown in FIG. It is a schematic diagram which shows conduction of the heat | fever which a semiconductor light-emitting device generate | occur | produces. It is a flowchart which shows the manufacturing process of a surface mount type light emitting diode. It is a figure for demonstrating each process of the manufacturing method of the surface mount type light emitting diode shown in FIG. FIG. 4 is a schematic diagram showing a part of a cross-sectional structure of a surface-mounted light emitting diode according to a second embodiment. 6 is a schematic diagram showing a part of a cross-sectional structure of a surface-mounted light-emitting diode according to Embodiment 3. FIG. 6 is a perspective view showing a configuration of a surface-mounted light emitting diode according to a fourth embodiment. FIG. 10 is a perspective view illustrating a configuration of a surface-mounted light emitting diode according to a fifth embodiment. It is a cross-sectional schematic diagram which shows the example of a structure of the conventional surface mount type light emitting diode.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 Semiconductor light-emitting device, 2 Base member, 3 Insulating layer, 4 Conductor layer, 5 Thermal conductive adhesive sheet, 6 Reflector, 7 Fluorescent substance containing translucent resin, 8 Conductive wire, 9,10 Convex part, 11 Plate material, 12 Cutting groove, 13 through-hole portion, 14 recess, 15 dicing line, 20, 30, 40, 50, 60, 100 surface mount type light emitting diode, 41 silver paste, 81, 82 external connection terminal portion, 101 base, 102 Electrode, 103 Semiconductor light emitting element, 104 Conductive wire, 105 Mold member.

Claims (14)

A metal base member having a flat surface, an opposite surface opposite to the surface, and an outer peripheral surface on which at least one convex portion is formed;
A semiconductor light emitting device having a back surface bonded and fixed on the front surface of the base member;
A metal reflector having an outer peripheral surface which is bonded to the surface of the base member with an adhesive sheet so as to surround the semiconductor light emitting element and has at least one convex-shaped portion formed thereon; Prepared ,
The convex portion has a width smaller than the width of the outer peripheral surface of the base member, and is formed away from the opposite surface,
The convex portion has a width smaller than the width of the outer peripheral surface of the reflector,
The outer peripheral surface of the base member and the outer peripheral surface of the reflector are on the same plane,
Ru near the same plane with the tip of the tip and the convex portion of the convex portion, a surface-mount type light emitting diode.   The surface-mount light-emitting diode according to claim 1, wherein the base member is made of at least one of Al, Cu, Fe, and Mg or a composite thereof.   The surface-mounted light-emitting diode according to claim 1, wherein the reflector is made of at least one of Al, Cu, Fe, and Mg, or a composite thereof.   2. The surface-mount light-emitting diode according to claim 1, wherein the adhesive sheet is made of at least one of thermally conductive silicone, thermally conductive acrylic, and thermally conductive epoxy, or a multilayer body thereof.   2. The surface-mount light-emitting diode according to claim 1, wherein an inner peripheral surface of the reflector is formed to be a part of any one of a conical surface, a spherical surface, and a paraboloid.   The surface-mount light-emitting diode according to claim 1, wherein the base member is subjected to a surface treatment of gold plating or silver plating at least on a surface to which the semiconductor light emitting element is bonded and fixed. In the base member and the surface not bonded on the reflector, the conductive layer is formed by interposing an insulating layer, according to claim 1 or a surface-mount type light emitting diode according to claim 2. The surface-mount light-emitting diode according to claim 7 , wherein the conductor layer is electrically connected to the semiconductor light-emitting element. The surface-mounted light-emitting diode according to claim 7 , wherein a surface of the reflector that is not joined to the base member is subjected to a surface treatment of gold plating or silver plating to form an external connection terminal portion.   The surface mount light emitting diode according to claim 1, wherein a translucent resin is provided on the base member so as to cover the semiconductor light emitting element. The surface-mounted light-emitting diode according to claim 10 , wherein the translucent resin is provided so as not to contact the reflector. The translucent resin, when the semiconductor light emitting element is excited by light emitted, the semiconductor light emitting element contains a phosphor that emits light with a longer wavelength than the light emitted, according to claim 11 Surface mount type light emitting diode. The semiconductor light emitting device is a blue semiconductor light emitting device made of a gallium nitride compound semiconductor,
The surface-mount light-emitting diode according to claim 11 , wherein the translucent resin contains a phosphor that emits yellow light when excited by light emitted from the blue semiconductor light-emitting element. Forming a plurality of through holes and a cutting groove in a metal reflector material;
A step of sequentially forming an insulating layer and a conductor layer on a part of the surface of the reflector material;
Forming a recess having the same planar shape as the groove formed in the reflector material on the front and back surfaces of the base member assembly made of metal;
Adhering and fixing a plurality of semiconductor light emitting elements to the surface of the base member assembly;
The plurality of semiconductor light emitting elements are disposed inside the plurality of through-hole portions with a heat conductive adhesive sheet interposed on the surface of the base member assembly, and the grooves and the recesses Joining the reflectors so that they overlap,
Electrically connecting the semiconductor light emitting element and the conductor layer;
The reflector material and the base member aggregate are cut in the thickness direction along the groove, and a single member having a base member having a convex portion formed on the outer peripheral surface and a reflector having a convex portion formed on the outer peripheral surface is provided. A method of manufacturing a surface-mounted light-emitting diode.

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