JP6521032B2 - Optical semiconductor device and method of manufacturing the same - Google Patents

Description

  The present invention relates to an optical semiconductor device such as a light emitting device usable as a display device, a lighting apparatus, a display, a backlight light source of a liquid crystal display, a light receiving device usable as a video camera, a digital still camera etc. In particular, the present invention relates to a thin / small type optical semiconductor device which is excellent in light extraction efficiency and contrast and can be obtained with a high yield, and a method of manufacturing the same.

  In recent years, along with the downsizing and weight reduction of electronic devices, various types of miniaturized optical semiconductor devices such as light emitting devices (such as light emitting diodes) and light receiving devices (such as CCDs and photodiodes) mounted on them have been developed. ing. These optical semiconductor devices use, for example, a double-sided through-hole printed circuit board having a pair of metal conductor patterns formed on both sides of an insulating substrate. An optical semiconductor element such as a light emitting element or a light receiving element is mounted on the double-sided through-hole printed circuit board, and a wire or the like is used to electrically connect the metal conductor pattern and the optical semiconductor element.

  However, in such an optical semiconductor device, it is essential to use a double-sided through-hole printed circuit board. Since this double-sided through-hole printed circuit board has a thickness of at least about 0.1 mm or more, it is a factor that hinders thorough thinning of the surface mount type optical semiconductor device. Therefore, an optical semiconductor device having a structure not using such a printed circuit board has been developed (for example, Patent Document 1).

JP 2005-79329 A

  The light emitting device disclosed in Patent Document 1 forms a thin metal film on a substrate by vapor deposition or the like to form an electrode, and seals the light emitting element together with the light emitting element with a light transmitting resin to form a conventional surface mount type light emitting device. Thinning is possible in comparison.

  However, since only the translucent resin is used, light is leaked from the light emitting element in the lower surface direction, and the light extraction efficiency tends to be reduced. There is also disclosed a structure in which a mortar-like metal film is provided to reflect light, but in order to provide such a metal film, it is necessary to provide unevenness on a substrate. Then, since the light emitting device is miniaturized, the asperities become extremely fine, and not only processing becomes difficult, but the asperity structure causes problems such as easy breakage at the time of peeling of the substrate and a decrease in yield. Cheap. Moreover, when using only a translucent resin when using for a display etc., contrast tends to worsen.

The light emitting device according to the present invention comprises two conductive members whose lower surface forms the outer surface of the light emitting device, a portion formed between at least the two conductive members, and a protrusion higher than the upper surface of the conductive member And a light-emitting element disposed in a recess formed by the light-shielding base and the upper surface of the conductive member, the light-emitting element being positioned away from the protrusion of the light-shielding base, and covering the light-emitting element And a part of the side surface of the conductive member is flush with the protrusion of the light shielding base to form the outer surface of the light emitting device, and the at least two conductive members The upper surface of the light-shielding substrate in the portion formed between is lower than the upper surface of the light-shielding substrate in the protrusion which is the side wall of the recess and higher than the upper surfaces of the two conductive members, Said to the side of the member By providing a protrusion spaced from the lower surface of the conductive member, which comprises suppressing the falling from the light-shielding base of the conductive member.

  According to the present invention, a thin optical semiconductor device can be easily formed with high yield. In addition, even with a thin optical semiconductor device, light from the light emitting element can be prevented from leaking from the lower surface side, so that the optical semiconductor device with improved light extraction efficiency and light with improved contrast A semiconductor device is obtained.

FIG. 1A is a perspective view showing the whole and the inside of an optical semiconductor device according to the present invention. 1B is a cross-sectional view and a partially enlarged view of the optical semiconductor device according to FIG. 1A in the A-A ′ cross section. FIG. 1C is a process diagram for explaining a method of manufacturing an optical semiconductor device according to the present invention. FIG. 1D is a process diagram for explaining a manufacturing method of the optical semiconductor device according to the present invention. FIG. 2A is a perspective view showing the whole and the inside of the optical semiconductor device according to the present invention. FIG. 2B is a cross-sectional view of the optical semiconductor device according to FIG. 2A in a B-B ′ cross section. FIG. 2C is a process diagram for explaining a method of manufacturing an optical semiconductor device according to the present invention. FIG. 3 is a perspective view showing the whole and the inside of the optical semiconductor device according to the present invention. FIG. 4A is a perspective view showing an optical semiconductor device according to the present invention. FIG. 4B is a cross-sectional view of the optical semiconductor device according to FIG. 4A taken along the line C-C '. FIG. 5A is a cross-sectional view of an optical semiconductor device according to the present invention. FIG. 5B is a partially enlarged cross-sectional view of the optical semiconductor device according to FIG. 5A.

  The best mode for carrying out the present invention will be described below with reference to the drawings. However, the form shown below illustrates the optical semiconductor device of this invention, and its manufacturing method, Comprising: This invention is not limited to the following forms.

  Further, the present specification does not in any way limit the members shown in the claims to the members of the embodiment. In particular, the dimensions, materials, shapes, relative arrangements, and the like of the components described in the embodiments are not intended to limit the scope of the present invention to the scope of the present invention unless otherwise stated. It is only an illustrative example. Note that the sizes and positional relationships of members shown in each drawing may be exaggerated for the sake of clarity. Further, in the following description, the same names and reference numerals indicate the same or the same members, and the detailed description will be appropriately omitted.

Embodiment 1
An optical semiconductor device (light emitting device) 100 according to the present embodiment is shown in FIGS. 1A and 1B. FIG. 1A is a perspective view of the light emitting device 100, and FIG. 1B is a cross sectional view of the light emitting device 100 shown in FIG.

  In the present embodiment, as shown in FIGS. 1A and 1B, the light emitting device 100 includes the light emitting element 103, the first conductive members 101 and 101 ′ electrically connected to the light emitting element 103, and the first light emitting element. A second conductive member 102 separated from the conductive members 101 and 101 ′ and on which the light emitting element 103 is mounted, and covers the light emitting element 103 and also includes the first conductive members 101 and 101 ′ and the second conductive member 102. And a sealing member 104 in contact therewith. A base 106 made of a resin capable of blocking light from the light emitting element 103 is provided between the first conductive members 101 and 101 'and the second conductive member 102.

(Substrate)
In the present embodiment, the base 106 is a resin capable of blocking the light from the light emitting element 103 by adding various fillers having a light blocking property and the like, and the first conductive members 101 and 101 ′ and the second It is provided between the conductive members 102. By providing the light shielding base 106 at such a position, the light from the light emitting element 103 can be prevented from leaking from the lower surface side of the light emitting device 100 to the outside, and the light extraction efficiency in the upper surface direction can be improved. Can.

  The thickness of the base 106 may be any thickness that can suppress the leakage of light to the lower surface side of the light emitting device 100. Further, the base 106 is in contact with both the side surface of the first conductive member 101, 101 'and the side surface of the second conductive member 102, that is, the sealing member 104 is the first conductive member 101, 101'. And the base 106, or between the second conductive member 102 and the base 106.

  When the width of the first conductive member 101, 101 'or the second conductive member 102 is different from the width of the light emitting device 100, for example, as shown in FIG. 1A, the width of the first conductive member 101, 101' is the light emitting device 100. If the side surface of the first conductive member 101, 101 'is separated from the side surface of the light emitting device 100, the base can be provided on that portion. By doing this, the lower surface of the light emitting device 100 is formed with the first conductive members 101 and 101 ′, the base 106, and the second conductive member 102 as the outer surface, and light toward the lower surface is obtained. Leakage can be efficiently suppressed.

  The base 106 may be any member as long as light from the light emitting element can be blocked. However, a member having a small difference in linear expansion coefficient with the support substrate is preferable. Furthermore, it is preferable to use an insulating member. As a preferable material, a resin such as a thermosetting resin or a thermoplastic resin can be used. In particular, when the film thickness of the conductive member is as thin as about 25 μm to 200 μm, a thermosetting resin is preferable, whereby an extremely thin substrate can be obtained. Furthermore, specifically, (a) epoxy resin composition, (b) silicone resin composition, (c) modified epoxy resin composition such as silicone modified epoxy resin, (d) modified silicone resin composition such as epoxy modified silicone resin (E) polyimide resin composition, (f) modified polyimide resin composition, and the like.

  In particular, thermosetting resins are preferable, and resins described in JP-A-2006-156704 are preferable. For example, among thermosetting resins, epoxy resin, modified epoxy resin, silicone resin, modified silicone resin, acrylate resin, urethane resin and the like are preferable. Specifically, (i) epoxy resins consisting of triglycidyl isocyanurate, hydrogenated bisphenol A diglycidyl ether, (ii) hexahydrophthalic anhydride, 3-methylhexahydrophthalic anhydride, 4-methylhexahydrophthalic anhydride It is preferable to use a solid epoxy resin composition containing a colorless and transparent mixture in which an acid anhydride composed of an acid is dissolved and mixed in an equivalent amount. Furthermore, 0.5 parts by weight of DBU (1,8-Diazabicyclo (5,4,0) undecene-7) as a curing accelerator and 1 part by weight of ethylene glycol as a cocatalyst with respect to 100 parts by weight of these mixtures are oxidized 10 parts by weight of a titanium pigment and 50 parts by weight of glass fibers are added, and a partial curing reaction is carried out by heating, and a B-staged solid epoxy resin composition is preferable.

  Moreover, the thermosetting epoxy resin composition which has an epoxy resin containing a triazine derivative epoxy resin as an essential component as described in international publication number WO2007 / 015426 is preferable. For example, it is preferred to include 1,3,5-triazine core derivative epoxy resin. In particular, an epoxy resin having an isocyanurate ring is excellent in light resistance and electrical insulation. It is desirable to have a bivalent, more preferably a trivalent epoxy group for one isocyanurate ring. Specifically, tris (2,3-epoxypropyl) isocyanurate, tris (α-methyl glycidyl) isocyanurate and the like can be used. The softening point of the triazine derivative epoxy resin is preferably 90 to 125 ° C. Further, these triazine derivative epoxy resins may be used in combination with hydrogenated epoxy resins or other epoxy resins. Furthermore, in the case of silicone resin compositions, silicone resins comprising methyl silicone resins are preferred.

  In particular, the case where a triazine derivative epoxy resin is used will be specifically described. It is preferred to use for the triazine derivative epoxy resin an acid anhydride which acts as a curing agent. In particular, light resistance can be improved by using an acid anhydride which is non-aromatic and does not have a carbon-carbon double bond. Specifically, hexahydrophthalic anhydride, methylhexahydrophthalic anhydride, trialkyltetrahydrophthalic anhydride, hydrogenated methyl nadic anhydride and the like can be mentioned. Particularly preferred is methyl hexahydrophthalic anhydride. Moreover, it is preferable to use an antioxidant, for example, a phenol type and a sulfur type antioxidant can be used. Moreover, as a curing catalyst, a well-known thing can be used as a curing catalyst of an epoxy resin composition.

Then, a filler for imparting a light shielding property, and various additives as necessary can be mixed in these resins. In the present invention, the resin is referred to as a light shielding resin constituting the substrate 106 including the above. For example, light can be transmitted by mixing fine particles such as TiO ₂ , SiO ₂ , Al ₂ O ₃ , MgO, MgCO ₃ , CaCO ₃ , Mg (OH) ₂ , Ca (OH) ₂ as a filler. You can adjust the rate. Preferably, about 90% or more of the light from the light emitting element is blocked so as to block about 60% or more of the light from the light emitting element. The light may be either reflected or absorbed by the substrate 106. When the optical semiconductor device is used for applications such as illumination, it is preferable to block light by reflection. In that case, the reflectance to light from the light emitting element is preferably 60% or more, more preferably 90% or more.

  The various fillers as described above can be used alone or in combination of two or more. For example, the filler can be used in combination with a filler for adjusting the reflectance and a filler for adjusting the linear expansion coefficient as described later.

For example, when using TiO ₂ as a white filler, it is preferable to blend 10 to 30 wt%, more preferably 15 to 25 wt%. As TiO ₂ , either rutile or anatase may be used. The rutile type is preferable in terms of light shielding property and light resistance. Furthermore, when it is desired to improve the dispersibility and light resistance, fillers modified by surface treatment can also be used. Alumina, silica, hydrated oxides such as zinc oxide, oxides, etc. can be used for the surface treatment of the filler made of TiO ₂ . In addition to these, it is preferable to use SiO ₂ in the range of 60～80Wt% as a filler, further, preferably used 65~75wt%. Further, as SiO ₂ , amorphous silica having a smaller linear expansion coefficient than crystalline silica is preferable. Further, a filler having a particle diameter of 100 μm or less, and further preferably a filler having a particle diameter of 60 μm or less is preferable. Furthermore, a filler having a spherical shape is preferable, which can improve the filling property at the time of molding of the substrate. In addition, in the case of use in a display or the like, when it is desired to improve the contrast, a filler that absorbs 60% or more, more preferably 90% or more of the light from the light emitting element is preferable. In such a case, the filler may be (a) carbon such as acetylene black, activated carbon or graphite, (b) transition metal oxide such as iron oxide, manganese dioxide, cobalt oxide or molybdenum oxide, or (c) colored Organic pigments can be used according to the purpose. Further, it is preferable to control the linear expansion coefficient of the substrate so that the difference with the linear expansion coefficient of the support substrate to be removed (peeled off) before being singulated becomes small. Preferably, the difference is 30% or less, more preferably 10% or less. When using a SUS board as a support substrate, 20 ppm or less is preferable and, as for the difference of a linear expansion coefficient, 10 ppm or less is more preferable. In this case, it is preferable to blend the filler at 70 wt% or more, preferably 85 wt% or more. Thereby, since the residual stress between the support substrate and the base can be controlled (relaxed), the warpage of the aggregate of optical semiconductors before being singulated can be reduced. By reducing the warpage, internal damage such as cutting of the conductive wire can be reduced, and positional deviation at the time of singulation can be suppressed, and manufacturing can be performed with high yield. For example, it is preferable to adjust the linear expansion coefficient of the substrate to 5 to 25 × 10 ⁻⁶ / K, more preferably to 7 to 15 × 10 ⁻⁶ / K. As a result, it is possible to easily suppress the warpage that occurs at the time of cooling after the base molding, and it is possible to manufacture with high yield. In the present specification, the term "linear expansion coefficient" refers to the linear expansion coefficient below the glass transition temperature of a substrate made of a light-shielding resin adjusted with various fillers and the like. It is preferable that the linear expansion coefficient in this temperature range be close to the linear expansion coefficient of the support substrate.

  Further, from another viewpoint, it is preferable to control the linear expansion coefficient of the base so as to reduce the difference between the linear expansion coefficients of the first and second conductive members. Preferably, the difference is 40% or less, more preferably 20% or less. Thereby, in the photosemiconductor device after singulation, it is possible to suppress separation of the first and second conductive members and the base, and to obtain an optical semiconductor device excellent in reliability.

(First conductive member / second conductive member)
The first and second conductive members function as a pair of electrodes for supplying electricity to the optical semiconductor element. In this embodiment, the first conductive member is electrically connected to the optical semiconductor element (light emitting element) using a conductive wire, a bump, or the like, and functions as an electrode for supplying power from the outside. The second conductive member is a member on which the light emitting element is directly or indirectly mounted via another member such as a submount, and functions as a support. The case where the second conductive member merely mounts the light emitting element and does not contribute to the energization, and the case where the second conductive member contributes to the energization of the light emitting element or the protective element (that is, functions as an electrode) And either one is fine. In the first embodiment, the second conductive member is used as a support that does not contribute to conduction.

  In this embodiment, both the first conductive member and the second conductive member are formed on the lower surface of the optical semiconductor device (light emitting device) so as to form the outer surface, that is, not covered by the sealing member etc. It is provided to be The shape and size of the first conductive member and the second conductive member in top view can be arbitrarily selected according to the size of the light emitting device and the number and size of the light emitting elements to be mounted, etc. . Further, with regard to the film thickness, it is preferable that the first conductive member and the second conductive member have substantially the same film thickness. Specifically, 25 μm or more and 200 μm or less are preferable, and 50 μm or more and 100 μm or less are more preferable. The conductive member having such a thickness is preferably a plating (plating layer) formed by a plating method, and particularly preferably a laminated plating (layer).

(First conductive member)
In the present embodiment, as shown in FIG. 1A, the first conductive members 101 and 101 ′ are respectively provided on two opposing sides of the light emitting device 100 having a substantially rectangular shape in top view. The first conductive member 101 and the first conductive member 101 ′ are provided so as to sandwich the second conductive member 102 via the base 106. Here, since the second conductive member 102 does not contribute to energization and is used as a support of the light emitting element 103, the two first conductive members 101 and 101 ′ function to form a positive and negative electrode pair.

  The first conductive members 101 and 101 ′ have an upper surface electrically connected to the light emitting element 103 via the conductive wires 105 and 105 ′, and a lower surface forming the outer surface of the light emitting device 100. That is, the first conductive members 101 and 101 ′ are provided so as not to be covered by the base 106 and exposed to the outside.

  The upper surfaces of the first conductive members 101 and 101 ′ are portions to which the conductive wires 105 and 105 ′ for electrically connecting to the light emitting element 103 are bonded, and at least an area necessary for bonding is provided. Good. Further, the upper surface of the first conductive member 101, 101 'may be a flat surface as shown in FIG. 1B or the like, or may have fine irregularities, grooves, holes and the like. Further, in the case where the electrode of the light emitting element and the first conductive member are directly electrically connected without using the conductive wire, the first conduction is made to have a size having a region to which the electrode of the light emitting element can be joined. Provide members.

  The lower surface of the first conductive member 101, 101 'forms the outer surface of the optical semiconductor device, and is preferably a substantially flat surface. However, fine irregularities or the like may be formed.

  Further, the side surfaces of the first conductive members 101 and 101 'may be flat. However, in view of adhesion with the base 106, etc., it is preferable to have a projection X as shown in the partial enlarged view of FIG. 1A on the inner side surface of the first conductive member 101, 101 '. The projection X is preferably provided at a position separated from the lower surface of the first conductive member 101, 101 ', whereby problems such as the first conductive member 101, 101' falling off from the base 106 hardly occur. Become. Further, in place of the protrusions, the side surfaces of the first conductive member and the second conductive member are inclined such that the lower surface is narrower than the upper surfaces of the first conductive member and the second conductive member. Dropout can be suppressed.

  The protrusion X can be provided at any position around the first conductive members 101 and 101 ′ as long as it is a position different from the outer surface of the light emitting device 100. For example, it can be partially provided, such as being provided only on the two opposing side surfaces of the conductive member having a rectangular shape in top view. Moreover, in order to prevent falling-off more reliably, it is preferable to form over the whole periphery of a conductive member except the surface which forms an outer surface.

(Second conductive member)
In the present embodiment, as shown in FIG. 1B, the second conductive member 102 has an upper surface on which the light emitting element 103 is mounted, and a lower surface forming the outer surface of the light emitting device 100. Further, in the present embodiment, the side surface of the second conductive member 102 does not function as the electrode. Therefore, as shown to FIG. 1A, it can be provided so that all the side surfaces may be covered with a sealing member, ie, it may space apart from the side surface of the light-emitting device 100. FIG. Thereby, when obtaining the light emitting device singulated by cutting, since the cutting blade can be cut so as not to contact the second conductive member, the cutting becomes easy. Also, the second conductive member may be provided such that a portion thereof forms the outer surface of the light emitting device 100, ie, reaches the side surface of the light emitting device 100 (not shown). Since the light emitting element is mounted on the second conductive member, the heat dissipation can be improved by increasing the area.

  The upper surface of the second conductive member 102 may have an area larger than the area on which the light emitting element 103 can be mounted. In addition to the substantially rectangular shape in top view as shown in FIG. 1A, it may have various shapes such as a polygon, a waveform, or a shape having a notch. Further, a region on which the light emitting element 103 is mounted is preferably a flat surface. In addition to the light emitting element, a protective element or the like can be placed on the top surface of the second conductive member 102.

  The side surface of the second conductive member 102 may be a flat surface, but in consideration of adhesion with the base 106, etc., it has a projection X as shown in FIG. 1B as in the first conductive member. Is preferred. The protrusion X is preferably provided at a position spaced apart from the lower surface of the second conductive member 102, whereby problems such as the second conductive member 102 falling off from the base 106 hardly occur. The protrusion X can be provided at any position around the second conductive member 102. For example, it can be partially provided, such as being provided only on the two opposing side surfaces of the conductive member having a rectangular shape in top view. Moreover, in order to prevent falling off more reliably, it is preferable to form over the entire periphery of the second conductive member.

  The first conductive member and the second conductive member preferably use the same material, which can reduce the number of processes. However, different materials may be used. Specific materials include metals such as copper, aluminum, gold, silver, tungsten, molybdenum, iron, nickel, cobalt or alloys thereof (iron-nickel alloy etc.), phosphor bronze, iron-containing copper, Au-Sn, etc. Eutectic solders, solders such as SnAgCu and SnAgCuIn, and ITO. Among solder materials, it is preferable that the solder particles are once melted and solidified so that the metal to be joined by the solder and the solder are alloyed to increase the melting point, and the composition is adjusted to a composition which does not remelt at additional heat treatment such as reflow mounting.

  These can be used alone or as an alloy. Furthermore, a plurality of layers can be provided by laminating (plating) or the like. For example, in the case of using a light emitting element as a semiconductor element, it is preferable to use a material that can reflect light from the light emitting element for the outermost surface of the conductive member. Specifically, gold, silver, copper, Pt, Pd, Al, W, Mo, Ru, Rh and the like are preferable. Furthermore, the conductive member on the outermost surface preferably has high reflectance and high gloss. Specifically, the reflectance in the visible region is preferably 70% or more, and in that case, Ag, Ru, Rh, Pt, Pd or the like is preferably used. In addition, it is preferable that the surface gloss of the conductive member be high. The preferred glossiness is 0.5 or more, more preferably 1.0 or more. The glossiness shown here is a number obtained by irradiation at 45 °, a measurement area of 0.2 0.2 mm, and vertical light reception, using a micro surface color difference meter VSR 300A manufactured by Nippon Denshoku Kogyo. Moreover, it is preferable to use materials, such as Au, Sn, Sn alloy, eutectic solder plating, such as AuSn, etc. which are advantageous for mounting to a circuit board etc. for the support substrate side of a conductive member.

  In addition, an intermediate layer may be formed between the outermost surface (uppermost layer) of the conductive member and the support substrate side (lowermost layer). In order to improve the mechanical strength of the conductive member and the light emitting device, it is preferable to use a metal with high corrosion resistance, such as Ni, for the intermediate layer. Moreover, in order to improve heat dissipation, it is preferable to use copper with high thermal conductivity for the intermediate layer. Thus, depending on the purpose and application, it is preferable to use a suitable member for the intermediate layer. Also for this intermediate layer, Pt, Pd, Al, W, Ru, Pd or the like can be used other than the above-mentioned metals. As the intermediate layer, a metal having good adhesion to the metal of the uppermost layer or the lowermost layer may be laminated. The film thickness of the intermediate layer is preferably thicker than the uppermost layer or the lowermost layer. In particular, it is preferable to form in the ratio of 80%-99% of the film thickness of the whole electrically-conductive member, More preferably, it is preferable to set it as 90%-99% of range.

In particular, in the case of a plating layer made of metal, the linear expansion coefficient is defined by the composition, and therefore, it is preferable that the lowermost layer and the intermediate layer have a linear expansion coefficient relatively close to that of the support substrate. For example, in the case of using SUS430 having a linear expansion coefficient of 10.4 × 10 ⁻⁶ / K as a supporting substrate, the conductive member thereon has a laminated structure containing (as a main component) the following metals: can do. From the lowermost layer side, Au (0.04 to 0.1 μm) having a linear expansion coefficient of 14.2 × 10 ⁻⁶ / K and a linear expansion coefficient of 12.8 × 10 ⁻⁶ / K as the first intermediate layer Ni (or Cu having a linear expansion coefficient of 16.8 × 10 ^-6 / K) (25 to 100 μm), Au (0.01 to 0.07 μm) as the second intermediate layer, and a linear expansion coefficient of 119. A laminated structure of Ag (2-6 μm) or the like which is 7 × 10 ⁻⁶ / K is preferable. Although Ag of the uppermost layer has a linear expansion coefficient significantly different from that of the metal of the other layers, Ag is used because the reflectance of light from the light emitting element is prioritized. Since the top layer of Ag is extremely thin, the influence on warpage is extremely weak. Therefore, there is practically no problem.

(Sealing member)
The sealing member is provided to cover the light emitting element and to be in contact with the first conductive member and the second conductive member. The sealing member is a member that protects electronic components such as a light emitting element, a light receiving element, a protection element, and a conductive wire from dust, moisture, external force, and the like.
As a material of the sealing member, a material having translucency capable of transmitting light from the light emitting element and having light resistance which is less likely to deteriorate due to them is preferable. As a specific material, it has translucency which can permeate | transmit the light from a light emitting element, such as a silicone resin composition, a modified silicone resin composition, an epoxy resin composition, a modified epoxy resin composition, an acrylic resin composition, etc. An insulating resin composition can be mentioned. In addition, a silicone resin, an epoxy resin, a urea resin, a fluorine resin, and a hybrid resin containing at least one or more of these resins can also be used. Furthermore, not limited to these organic substances, inorganic substances such as glass and silica sol can also be used. In addition to such materials, if desired, a colorant, a light diffusing agent, a light reflecting material, various fillers, a wavelength conversion member (fluorescent member), etc. can be contained. The filling amount of the sealing member may be an amount by which the electronic component is covered.

  The shape of the outer surface of the sealing resin member can be variously selected according to the light distribution characteristic and the like. For example, by making the upper surface into a convex lens shape, a concave lens shape, a Fresnel lens shape or the like, the directivity characteristic can be adjusted. In addition to the sealing member, a lens member may be provided. Furthermore, when using a phosphor-containing molded body (for example, a phosphor-containing plate-like molded body, a phosphor-containing dome-like molded body, etc.), a material having excellent adhesion to the phosphor-containing molded body as a sealing member is used. It is preferable to select. In addition to the resin composition, inorganic substances such as glass can be used as the phosphor-containing compact.

  Although the sealing member used mainly for the light emitting device has been described, the light receiving device is substantially the same as described above. In the case of the light receiving device, a colored filler such as white or black may be contained in the sealing member for the purpose of enhancing the incident efficiency of light or avoiding the secondary reflection inside the light receiving device. Moreover, in order to avoid the influence of visible light, it is preferable to use a sealing member containing a black colored filler in the infrared light emitting device or the infrared detecting device.

(Joining member)
The bonding member is a member for placing and connecting a light emitting element, a light receiving element, a protection element and the like on the first conductive member and the second conductive member. Depending on the substrate of the element to be placed, either a conductive bonding member or an insulating bonding member can be selected. For example, in the case of a semiconductor light emitting device in which a nitride semiconductor layer is stacked on sapphire, which is an insulating substrate, the bonding member may be either insulating or conductive. In the case of using a conductive substrate such as a SiC substrate, conduction can be achieved by using a conductive bonding member. An epoxy resin composition, a silicone resin composition, a polyimide resin composition, those modified resin, a hybrid resin etc. can be used as an insulating joining member. When these resins are used, it is possible to provide a metal layer with high reflectance such as Al or Ag film or a dielectric reflection film on the back surface of the light emitting element in consideration of deterioration due to light and heat from the semiconductor light emitting element. In this case, methods such as vapor deposition, sputtering, and bonding of thin films can be used. In addition, as the conductive bonding member, a conductive paste such as silver, gold, palladium, a solder such as Au-Sn eutectic, a brazing material such as a low melting point metal, or the like can be used. Furthermore, among these bonding members, in the case of using a translucent bonding member in particular, a fluorescent member that absorbs light from the semiconductor light emitting element and emits light of different wavelength may be contained therein.

(Conductive wire)
As a conductive wire which connects the electrode of the light emitting element, the first conductive member, and the second conductive member, metals such as gold, copper, platinum, aluminum and alloys thereof can be used. In particular, it is preferable to use gold excellent in thermal resistance and the like.

(Wavelength conversion member)
The sealing member may contain a fluorescent member which absorbs at least a part of the light from the semiconductor light emitting element and emits light having different wavelengths as a wavelength conversion member.
As the fluorescent member, one that converts the light from the semiconductor light emitting element to a longer wavelength is more efficient. However, the present invention is not limited to this, and various fluorescent members can be used, such as one that converts light from a semiconductor light emitting element to a short wavelength or one that further converts light converted by another fluorescent member. Such a fluorescent member may form a single fluorescent substance or the like in a single layer, or may form a single layer in which two or more fluorescent substances or the like are mixed, or a single fluorescent substance Two or more single layers containing etc. may be laminated, or two or more single layers mixed with two or more kinds of fluorescent substances may be laminated.

When a semiconductor light emitting element using a nitride-based semiconductor as a light emitting layer is used as a light emitting element, a fluorescent member that absorbs light from the light emitting element and converts the wavelength to light of different wavelength can be used. For example, a nitride-based phosphor or an oxynitride-based phosphor mainly activated by a lanthanoid-based element such as Eu or Ce can be used. More specifically, (a) Eu activated α or β sialon type phosphor, various alkaline earth metal nitrided silicates, various alkaline earth metal aluminum silicon nitrides (eg: CaSiAlN ₃ : Eu, SrAlSi ₄ N ₇ : Alkaline earth metal halogenapatite mainly activated by a lanthanoid element such as Eu) and (b) Eu, a transition metal element such as Mn, a halosilicate of an alkaline earth metal, an alkaline earth metal silicate, Alkaline earth metal borate halogen, alkaline earth metal aluminate, alkaline earth metal sulfide, alkaline earth metal thiogallate, alkaline earth metal silicon nitride, germanate, or (c) lanthanides such as Ce Rare earth aluminate, rare earth silicate, alkaline earth metal rare earth silicic acid activated mainly by elements Salt (d) It is preferable that it is at least one or more selected from organic and organic complexes that are mainly activated with a lanthanoid element such as Eu. Preferred is a YAG-based phosphor which is a rare earth aluminate phosphor mainly activated by a lanthanoid-based element such as Ce. YAG-based phosphors are Y ₃ Al ₅ O ₁₂ : Ce, (Y _0.8 Gd _0.2 ) ₃ Al ₅ O ₁₂ : Ce, Y ₃ (Al _0.8 Ga _0.2 ) ₅ O ₁₂ : Ce , (Y, Gd) ₃ (Al, Ga) ₅ O ₁₂ or the like. There are also Tb ₃ Al ₅ O ₁₂ : Ce, Lu ₃ Al ₅ O ₁₂ : Ce, etc. in which a part or all of Y is substituted with Tb, Lu or the like. Furthermore, phosphors other than the above-mentioned phosphors and having similar performance, action, and effects can also be used.

Moreover, what apply | coated fluorescent substance to other molded objects, such as glass and a resin composition, can also be used. Furthermore, a phosphor-containing compact can also be used. Specifically, a phosphor-containing glass, a YAG sintered body, a sintered body of YAG and Al ₂ O ₃ , SiO ₂ , B ₂ O ₃ or the like, a crystallized inorganic bulk in which YAG is precipitated in an inorganic melt The body etc. can be used. What integrally molded fluorescent substance with an epoxy, silicone, a hybrid resin etc. may also be used.

(Semiconductor element)
In the present invention, the semiconductor element has various structures such as a structure in which positive and negative electrodes are formed on the same side, a structure in which positive and negative electrodes are formed on different sides, and a structure in which a substrate different from the growth substrate is bonded. A semiconductor element can be used. It is preferable to use a semiconductor light emitting element (also referred to simply as a light emitting element or a light emitting diode) or a semiconductor light receiving element (simply a light receiving element) having such a structure.

The semiconductor light emitting element can be selected at any wavelength. For example, a blue, a green light emitting element, ZnSe and nitride semiconductor _{(In X Al Y Ga 1-} X-Y N, 0 ≦ X, 0 ≦ Y, X + Y ≦ 1), can be used GaP. In addition, GaAlAs, AlInGaP, or the like can be used as the red light-emitting element. Furthermore, semiconductor light emitting devices made of materials other than these can also be used. The composition, emission color, size, number, and the like of the light-emitting elements to be used can be selected as appropriate depending on the purpose.

In the case of a light emitting device having a fluorescent substance, a nitride semiconductor capable of emitting a short wavelength capable of efficiently exciting the fluorescent substance (In _X Al _Y Ga _1-X-Y N, 0 ≦ X, 0 ≦ Y, X + Y ≦ 1) is preferred. Various emission wavelengths can be selected depending on the material of the semiconductor layer and the mixed crystal ratio thereof.

  In addition, light emitting elements that output ultraviolet light or infrared light as well as light in the visible light region can be used. Furthermore, a light receiving element or the like can be mounted together with or independently from the light emitting element.

  Examples of the light receiving element include a photo IC, a photodiode, a photo transistor, a CCD (charge coupled device) image sensor, a CMOS image sensor, a Cd cell, and the like.

(Support substrate)
The support substrate is a plate-like or sheet-like member used to form the first and second conductive members. The supporting substrate is not included in the optical semiconductor device because it is removed before being singulated. As the supporting substrate, in addition to a metal plate having conductivity such as a SUS plate, an insulating plate such as polyimide on which a conductive film is formed by a sputtering method or a vapor deposition method can be used. Alternatively, an insulating plate-like member to which a metal thin film or the like can be attached can also be used. In any event, the support substrate is removed at the end of the process. That is, the support substrate needs to be peeled off from the first and second conductive members and the base. Therefore, it is necessary to use a bendable member as the support substrate, and although depending on the material, it is preferable to use a plate-like member having a film thickness of about 10 μm to 300 μm. As the supporting substrate, metal sheets such as iron, copper, silver, kovar, nickel and the like, resin sheets made of polyimide to which metal thin films can be attached and the like are preferable other than the above-mentioned SUS plate. In particular, it is preferable to use various stainless steels such as altensite, ferrite and austenite. Particularly preferred is ferritic stainless steel. Particularly preferably, 400 series and 300 series stainless steels are preferable. More ^{specifically, SUS430 (10.4 × 10 -6 /K),SUS444(10.6×10} -6 /K),SUS303(18.7×10 -6 /K),SUS304(17.3 × 10 ^-6 / K) or the like is preferably used. The surface of the 400 series stainless steel tends to be rougher than that of the 300 series when acid treatment is performed as pretreatment of plating. Therefore, when the plating layer is formed on the acid-treated 400 series stainless steel, the surface of the plating layer is also easily roughened. Thereby, the adhesion to the sealing member and the resin constituting the base can be improved. In addition, the surface of the 300 series is hard to be roughened by acid treatment. Therefore, if 300 series stainless steel is used, the glossiness of the surface of the plating layer can be easily improved, whereby the reflectance from the light emitting element can be improved, and a light emitting device with high light extraction efficiency can be obtained.

  In order to increase the surface gloss of the first and second conductive members, the first conductive member is formed by using a method such as plating, vapor deposition, or sputtering. In order to further increase the glossiness, the surface of the support substrate is preferably smooth. For example, when using SUS as a support substrate, the outermost surface of a conductive member with high surface gloss can be obtained by using SUS having a relatively small grain size in the 300 series.

  Further, in order to reduce the warpage after resin molding, the support substrate may be processed with slits, grooves, or waves.

<Manufacturing method 1-1>
Hereinafter, a method of manufacturing a light emitting device of the present invention will be described with reference to the drawings. FIG. 1C and FIG. 1D are diagrams for explaining steps of forming an assembly 1000 of light emitting devices. By cutting the assembly 1000 into pieces, the light emitting device 100 described in Embodiment 1 can be obtained.

1. First Step First, as shown in FIG. 1C (a), a support substrate 1070 made of a metal plate or the like is prepared.
A resist 1080 is applied on the surface of the support substrate as a protective film. The thickness of the first conductive member and the second conductive member to be formed later can be adjusted by the thickness of the resist 1080. Here, although the resist 1080 is provided only on the upper surface (the surface on which the first conductive member and the like are formed) of the support substrate 1070, the resist 1080 may be further formed on the lower surface (the opposite surface). In that case, by providing the resist on substantially the entire surface of the opposite side, it is possible to prevent the conductive member from being formed on the lower surface by the plating described later.

  In the case of a resist formed by photolithography, either a positive type or a negative type may be used as the protective film (resist) to be used. Here, although a method using a positive resist is described, a positive resist and a negative resist may be used in combination. In addition, a method in which a resist formed by screen printing or a sheet-like resist is attached can also be used.

  After the applied resist is dried, a mask 1090 having an opening on the top is disposed directly or indirectly, and exposure is performed by irradiating ultraviolet light as indicated by arrows in the figure. As the ultraviolet light used here, a wavelength suitable for the sensitivity of the resist 1070 can be selected. Thereafter, the substrate is treated with an etchant to form a resist 1080 having an opening K as shown in FIG. 1C (b). Here, if necessary, acid activation may be performed.

  Then, plating is performed using a metal to form the first conductive member 1010 and the second conductive member 1020 in the opening K of the resist 1080 as shown in FIG. 1C (c). At this time, plating can be performed to be thicker than the film thickness of the resist 1080 by adjusting plating conditions. Thereby, the conductive member can be formed to the upper surface of the resist (protective film), and the projection X as shown in FIG. 1A can be formed. The plating method can be appropriately selected by a method known in the art according to the metal used or according to the target film thickness and flatness. For example, electrolytic plating, electroless plating or the like can be used. In particular, electrolytic plating is preferably used, which facilitates removal of the resist (protective film) and facilitates formation of the conductive member in a uniform shape. Further, in order to improve the adhesion to the outermost layer (for example, Ag), it is preferable to form an intermediate layer (for example, Au, Ag) on the layer therebelow by strike plating.

  After plating, the protective film 1080 is washed and removed to form the first conductive member 1010 and the second conductive member 1020 which are separated from each other as shown in FIG. 1C (d). In addition to the plating as described above, the projection X can be formed by crushing, a baking method after metal paste printing, or the like.

2. Second Step Next, as shown in FIG. 1D (a), a base 1060 capable of reflecting light from the light emitting element is provided between the first conductive member 1010 and the second conductive member 1020. The substrate can be formed by methods such as injection molding, transfer molding, compression molding and the like.

  For example, when the base 1060 is formed by transfer molding, a support substrate on which a plurality of first and second conductive members are formed is set so as to be sandwiched in a mold consisting of an upper mold and a lower mold. At this time, it may be set in the mold via a release sheet or the like. The resin pellet which is a raw material of a base | substrate is inserted in the inside of a metal mold | die, and a supporting substrate and a resin pellet are heated. After the resin pellet is melted, it is pressurized and filled into a mold. The heating temperature, heating time, pressure and the like can be appropriately adjusted according to the composition of the resin used and the like. After curing, it is removed from the mold to obtain a molded article shown in FIG. 1D (a).

3. Third Step Next, as shown in FIG. 1D (b), the light emitting element 1030 is bonded on the second conductive member 1020 using a bonding member (not shown), and the first conductive wire 1050 is used. Connected to the conductive member 1010 of FIG. In addition, although the light emitting element which has a positive / negative electrode in the same surface side is used here, the light emitting element in which the positive / negative electrode is formed in a different surface can also be used.

4. After the fourth step , the sealing member 1040 is formed by a method such as transfer molding, potting, printing, etc. so as to cover the light emitting element 1030 and the conductive wire 1050. Here, the sealing member has a single-layer structure, but may have a multilayer structure of two or more layers having different compositions and characteristics.
After curing the sealing member 1040, as shown in FIG. 1D (c), the supporting substrate 1070 is peeled off and removed.

5. Through the fifth and subsequent steps, an assembly 1000 of semiconductor devices (light emitting devices) as shown in FIG. 1D (d) can be obtained. Finally, the light emitting device 100 as shown, for example, in FIG. 1A can be obtained by cutting and singulating at a position indicated by a broken line in FIG. 1D (d). As a method of singulation, various methods such as dicing with a blade and dicing with a laser beam can be used.

  In addition, in FIG. 1D (d), although it cut | disconnects in the position containing an electrically-conductive member, you may cut | disconnect not only this but the position away from an electrically-conductive member. When the conductive member is cut at the position including the conductive member, the conductive member is exposed also on the side surface of the optical semiconductor device, and the solder or the like is easily joined. In addition, when cutting at a position away from the conductive member, it is easier to cut compared to cutting the conductive member (metal) and the resin together because only the resin such as the base or sealing member is cut. It can be cut off.

<Manufacturing method 1-2>
In the manufacturing method 1-2, a method of forming the first conductive member and the second conductive member by etching will be described.

  A thin film of a conductive member such as copper foil is attached to a plate-like support substrate made of an insulating member such as polyimide. Furthermore, a sheet-like protective film (such as a dry resist sheet) is attached on the conductive member, exposed using a mask having an opening, and a protective film of a part exposed using a cleaning solution such as a weak alkaline solution. Remove Thus, a protective film having an opening is formed on the conductive member.

  Next, the conductive member is immersed in an etching solution capable of etching the entire support substrate to etch the conductive member. Finally, the protective film is removed to form first and second conductive members spaced apart from each other on the support substrate.

Second Embodiment
The optical semiconductor device (light-emitting device) 200 concerning Embodiment 2 is shown to FIG. 2A and FIG. 2B. FIG. 2A is a perspective view showing the inside of the light emitting device 200 according to the present invention, and FIG. 2B is a cross sectional view taken along the line C-C 'of the light emitting device 200 according to FIG.

  In the second embodiment, the light emitting device 200 includes (a) a light emitting element 203 and a protection element 210, and (b) a first conductive member 201 electrically connected to the light emitting element 203 and the protection element 210 (c The second conductive member 202 which is separated from the first conductive member 201 and on which the light emitting element 203 is mounted, and (d) covers the light emitting element 203 and the first conductive member 201 and the second conductive member 202 And a sealing member 204 in contact therewith. The lower surfaces of the first conductive member 201 and the second conductive member 202 respectively form the outer surface of the light emitting device 200. Furthermore, part of the side surfaces of the first conductive member 201 and the second conductive member 202 also form the outer surface of the light emitting device 200. A base 206 made of a resin capable of blocking light from the light emitting element 203 is formed between the first conductive member 201 and the second conductive member 202. The base 206 has a protrusion 206 b which is higher than the top surfaces of the first conductive member 201 and the second conductive member 202 at a position away from the light emitting element 203. Thereby, the concave portion S1 is formed in the light emitting device 200 by the protruding portion 206b of the base 206. The concave portion S1 can suppress the emission of light to the side surface side of the light emitting device 200, and emit the light toward the upper surface.

  As shown to FIG. 2B, it is preferable that the protrusion part 206b makes an inner surface an inclined surface so that it may become the recessed part S1 which spreads toward an upper surface. Thus, light can be easily reflected toward the upper surface of the light emitting device. As the members and the like used in the second embodiment, the same members as those in the first embodiment can be used.

<Manufacturing method 2>
Hereinafter, a method of manufacturing the light emitting device 200 of the present invention will be described with reference to the drawings. FIG. 2C is a view for explaining a process of forming an assembly 2000 of light emitting devices. By cutting the assembly 2000, the light emitting device 200 described in the second embodiment can be obtained.

1. In the first step manufacturing method 2, the first step can be performed in the same manner as the manufacturing methods 1-1 and 1-2.

2. Second Step In the second step, as shown in FIG. 2C (a), when the bottom portion 2060a of the base is formed in the second step, the projecting portion 2060b is simultaneously formed. In addition, although it forms simultaneously here, you may form the bottom face part 2060a first, and may form the protrusion part 2060b sequentially, or form the bottom face part 2060a after forming the protrusion part 2060b first. It is also good. Although it is preferable that both use the same light shielding resin, different light shielding resins may be used depending on the purpose and application.

  The protrusion 2060 b can be formed by a transfer mold using a mold or the like, similarly to the bottom surface 2060 a of the base. At this time, by using an upper mold having asperities as a mold, a projecting portion 2060b as shown in FIG. 2C (a) can be formed.

3. Third Step In the third step, as shown in FIG. 2C (b), the light emitting element 2030 is placed on the first conductive member 2010 in the region surrounded by the projecting portion 2060b. The conductive wire 2050 is connected to the upper surfaces of the first and second conductive members in the area surrounded by the same protrusion 2060b.

4. Fourth Step In the fourth step, as shown in FIG. 2C (c), the recess formed by being surrounded by the projecting portion 2060b is filled with a sealing member made of a translucent resin. Thus, the light emitting element is covered with the sealing member. Here, the sealing member 2040 is provided so as to have substantially the same height as the projecting portion 2060b, but the sealing member 2040 is not limited to this and may be formed to be lower or higher than the projecting portion. In addition, the upper surface may be flat as described above, or may be formed in a curved shape in which the center is recessed or protruded.

5. Fifth Step In the fifth step, the optical semiconductor device 200 as shown in FIG. 2A is singulated by cutting at the broken line portion shown in FIG. 2C (d), that is, at a position where the projection 2060b is to be cut. I assume. Here, the projecting portion 2060 b is cut so that the sealing member 2040 is not cut, so that the light extraction direction can be limited only to the upper direction of the optical semiconductor device (light emitting device) 200. Thus, light extraction in the upward direction is efficiently performed. Here, although the protruding portion 2060 is cut, the sealing member 2040 may be cut at a position where it is cut.

Embodiment 3
FIG. 3 is a perspective view showing the optical semiconductor device of the present invention, in which a part is cut away so that the inside of the base 306 can be seen. In the third embodiment, as shown in FIG. 3, the light emitting element 303 is placed in the recess S2 surrounded by the projecting portion 306 of the base, and the protective element 310 is embedded in the projecting portion 306 of the base. It is characterized by FIG. 3 is a view showing the inside of a part of the base 306 of the substantially rectangular optical semiconductor device as shown in FIG. 2A.

  In the second step, before forming the base, the protection element 310 is placed on the second conductive member 302 and further bonded to the first conductive member 301 using the conductive wire 305. Thus, the protective element 310 can be embedded in the base 306. In Embodiment 1, the light emitting element and the protective element are placed in the third step after the base is formed in the second step. In this embodiment mode, the light emitting element and the protective element are provided in different steps. As in the present embodiment, by providing the protective element so as to be embedded in the base, the optical semiconductor device itself can be further miniaturized.

Fourth Preferred Embodiment
FIG. 4A is a perspective view showing the optical semiconductor device of the present invention, and FIG. 4B is a cross-sectional view taken along the line CC 'in FIG. 4A. The fourth embodiment is characterized in that a base 406 is provided to reach the side surface of the optical semiconductor element 403 as shown in FIGS. 4A and 4B. Here, a protrusion which protrudes from the top surface of the first conductive member or the second conductive member is provided over the entire base 406. In such a configuration, the third step, that is, the step of mounting the optical semiconductor element on the first and / or second conductive members, is the second step, that is, the first and second steps. It can obtain by performing before the process of providing the base | substrate which consists of light shielding resin between the electrically-conductive members of these. As shown in FIGS. 4A and 4B, since the base 406 is provided to have substantially the same height as the optical semiconductor element (light emitting element) 403, light is emitted only from the top surface of the light emitting element. Thereby, light can be extracted more efficiently.

Further, although the base (protruding portion) 406 is provided until the height is substantially the same as that of the light emitting element 403 here, the height is not limited to this, and the height may be lower than that of the light emitting element 403. When such a base 406 is provided, the sealing member 404 can be cured on the light emitting element 403 or the base 406 by dropping, printing, or the like. Alternatively, the sealing member 404 which has been formed and cured in a separate step may be bonded to the base 406 and the light emitting element 403. For example, an Al ₂ O ₃ powder and a YAG phosphor powder formed into a flat plate shape by compression molding or the like can be attached as a sealing member 404 onto a light emitting element or a substrate using an adhesive.

  In the fourth embodiment, the positive and negative electrodes of the light emitting element 403 are directly bonded to the first and second conductive members using the conductive bonding member without using the conductive wire. In the case where the optical semiconductor element 403 is mounted before the formation of the base 406, deformation of the wire due to the mold can be prevented by adopting such a mounting method without using a wire.

The Fifth Preferred Embodiment
FIG. 5A is a cross-sectional view showing the optical semiconductor device of the present invention, and FIG. 5B is a partially enlarged view of FIG. 5A. The optical semiconductor device in the fifth embodiment has the same appearance as the optical semiconductor device shown in FIG. 2A, but a base formed between the first conductive member 501 and the second conductive member 502. The difference is that the protrusion 506 has a protrusion 506 a higher than the top surfaces of the first conductive member 501 and the second conductive member 502. A recess is formed around the light emitting element 503 with the protrusion 506 b as a side wall. In the recessed portion, a protruding portion 506a whose height is lower than the protruding portion 506b which is a side wall of the recessed portion is provided. As shown in FIG. 5B, the protrusion 506 a is formed to cover a part of the top surface of the first conductive member 501 and the second conductive member 502. In this way, when the support substrate is removed in the manufacturing process, it is possible to suppress peeling of the base (projection) 506a. Furthermore, since the base 506a at a position close to the light emitting element 503 can be thickened, the light from the light emitting element 503 can be prevented from leaking to the bottom side, and light can be reflected more efficiently. It is preferable that the projection 506a of the base provided between the first conductive member and the second conductive member have a height such that the conductive wire 505 does not contact. Further, it is preferable to cover a part of the top surface of both the first conductive member 501 and the second conductive member 502, but only one of them may be used. Also, the size, width, position, etc. of the area to be covered can be formed as desired. Furthermore, instead of providing the base 506 between the first conductive member 501 and the second conductive member 502, a separate member such as a submount made of Si from the first conductive member to the second conductive member may be used. And the light emitting element may be mounted thereon. Thus, the light from the light emitting element can be prevented from leaking to the bottom side, and the light can be reflected more efficiently.

  According to the method of manufacturing an optical semiconductor device according to the present invention, it is possible to easily obtain an optical semiconductor device which is small and light and which is excellent in light extraction efficiency and contrast. These optical semiconductor devices include (a) various display devices, (b) lighting fixtures, (c) displays, (d) backlight sources for liquid crystal displays, and (e) digital video cameras, facsimiles, copiers, The present invention can also be used for an image reading device such as a scanner, (f) a projector device, and the like.

100, 200, 300, 400 ... optical semiconductor device (light emitting device)
101, 101 ', 201, 301, 401 ... first conductive member 102, 202, 302, 402 ... second conductive member 103, 203, 303, 403 ... optical semiconductor element (light emitting element)
104, 204, 304, 404 ... sealing member 105, 105 ', 205, 205', 305, 405 ... conductive wire 106, 206, 306, 406 ... base 206a ... bottom surface of base 206b ··· Protrusions 210, 310 · · · Protection elements 1000, 2000 ··· Optical semiconductor device assembly 1010, 2010 · · · First conductive member 1020, 2010 · · · Second conductive member 1030, 2030 ··· Optical semiconductor device (light emitting device)
1040, 2040 · · · Sealing member 1050, 2050 · · · Conductive wire 1060, 2060 · · · Base 2060a · · · Bottom portion 2060b of the base · · · · Projection portion of the base 1070, 2070 · · · Support substrate 1080 · · · ..Protective film (resist)
1090 ··· Mask X ··· Protrusions S1, S2 · · · · Concave

Claims (8)

A light emitting device,
Two conductive members whose lower surface forms the outer surface of the light emitting device;
A light-shielding substrate comprising a portion formed between at least the two conductive members, and a protrusion higher than the upper surface of the conductive member;
A light emitting element which is disposed in a recess formed by the light shielding base and the upper surface of the conductive member and which is located at a distance from the protrusion of the light shielding base;
A sealing member covering the light emitting element;
Equipped with
A part of the side surface of the conductive member is flush with the projecting portion of the light shielding substrate to form an outer surface of the light emitting device,
The upper surface of the light shielding base in the portion formed between the at least two conductive members is lower than the upper surface of the light shielding base in the protrusion which is the side wall of the recess, and of the two conductive members. Higher than the top,
A light emitting device characterized in that the side surface of the conductive member is provided with a projection spaced from the lower surface of the conductive member, thereby preventing the conductive member from coming off the light shielding base. The thickness of the said electroconductive member is 25 micrometers or more and 200 micrometers or less, The light-emitting device of Claim 1 characterized by the above-mentioned. The thickness of the said electroconductive member is 50 micrometers or more and 100 micrometers or less, The light-emitting device of Claim 1 characterized by the above-mentioned. 4. The light emitting device according to any one of claims 1 to 3, wherein the light shielding substrate in a portion formed between the at least two conductive members covers a part of the top surface of the conductive member. The light-emitting device according to any one of claims 1 to 4, wherein the inner surface of the protrusion is an inclined surface spreading toward the upper surface. The light emitting device according to any one of claims 1 to 5, wherein a protective element is embedded in the protrusion. The light emitting device according to any one of claims 1 to 6 , wherein the sealing member contains a phosphor that absorbs at least a part of the light from the light emitting element and converts it into a different wavelength. The phosphor according to any one of claims 1 to 7 , further comprising: a phosphor that absorbs at least a part of the light from the light emitting element and converts the light to a different wavelength, and the phosphor is applied to a glass or a resin composition molded body. A light emitting device described in.

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