JP6007891B2 - Optical semiconductor device and manufacturing method thereof - Google Patents

Description

  The present invention relates to an optical semiconductor device such as a light emitting device usable for a display device, a lighting fixture, a display, a backlight light source of a liquid crystal display, a light receiving device usable for a video camera, a digital still camera, and the like, and a manufacturing method thereof. In particular, the present invention relates to an optical semiconductor device that is thin / small and excellent in light extraction efficiency and contrast, and can be obtained with high yield, and a method for manufacturing the same.

  In recent years, as electronic devices have become smaller and lighter, various types of optical semiconductor devices such as light emitting devices (light emitting diodes, etc.) and light receiving devices (CCDs, photodiodes, etc.) mounted on them have been developed. ing. These optical semiconductor devices use, for example, a double-sided through-hole printed circuit board in which a pair of metal conductor patterns are formed on both surfaces of an insulating substrate. An optical semiconductor element such as a light emitting element or a light receiving element is placed on a double-sided through-hole printed circuit board, and the metal conductor pattern and the optical semiconductor element are electrically connected using a wire or the like.

  However, it is essential for such an optical semiconductor device to use a double-sided through-hole printed circuit board. Since this double-sided through-hole printed circuit board has a thickness of at least about 0.1 mm, it is a factor that hinders a thorough thinning of the surface-mount type optical semiconductor device. Therefore, an optical semiconductor device having a structure that does not use such a printed circuit board has been developed (for example, Patent Document 1).

JP 2005-79329 A

  The light-emitting device disclosed in Patent Document 1 is a conventional surface-mounted light-emitting device by forming a thin metal film on a substrate by vapor deposition or the like to form an electrode and sealing the light-emitting element together with a light-transmitting resin. It is possible to make it thinner.

  However, since only the translucent resin is used, the light escapes from the light emitting element in the lower surface direction, and the light extraction efficiency tends to be lowered. Although a structure in which a mortar-shaped metal film is provided to reflect light is disclosed, in order to provide such a metal film, it is necessary to provide unevenness on the substrate. Then, since the light emitting device is miniaturized, the unevenness becomes extremely fine, which makes it difficult to process, and the uneven structure easily breaks when the substrate is peeled off, resulting in a decrease in yield. Cheap. Moreover, when using for a display etc., when only translucent resin is used, contrast will deteriorate easily.

The optical semiconductor device of the present invention is an optical semiconductor element, the lower surface forms the outer surface of the optical semiconductor device, the first conductive member having a thickness of 25 μm to 200 μm, and spaced apart from the first conductive member, The lower surface forms the outer surface of the optical semiconductor device, the second conductive member having a thickness of 25 to 200 μm, and a light-shielding resin having a reflectance of 60% or more with respect to light from the optical semiconductor element, An optical semiconductor device having a base provided to shield between the first conductive member and the second conductive member, wherein the positive electrode and the negative electrode of the optical semiconductor element are The first conductive member and the second conductive member are joined without a conductive wire, and the base is made of the light-shielding resin, and the first conductive member and the second conductive member A protrusion protruding from the upper surface of the With serial protrusion is the outer side surface of said optical semiconductor device, characterized in that it extends until reaching the optical semiconductor element towards the side surface of said optical semiconductor element.

  According to the present invention, a thin optical semiconductor device can be easily formed with a high yield. Even in a thin optical semiconductor device, light from the light emitting element can be prevented from leaking from the lower surface side, so that an optical semiconductor device with improved light extraction efficiency and light with improved contrast can be used. A semiconductor device is obtained.

FIG. 1A is a perspective view showing the whole and the inside of an optical semiconductor device according to the present invention. 1B is a cross-sectional view and a partially enlarged view of the optical semiconductor device according to FIG. 1A taken along the line A-A ′. FIG. 1C is a process diagram illustrating the method for manufacturing the optical semiconductor device according to the present invention. FIG. 1D is a process diagram illustrating a method for manufacturing an optical semiconductor device according to the present invention. FIG. 2A is a perspective view showing the whole and the inside of the optical semiconductor device according to the present invention. FIG. 2B is a cross-sectional view of the optical semiconductor device according to FIG. FIG. 2C is a process diagram illustrating the method for manufacturing the optical semiconductor device according to the present invention. FIG. 3 is a perspective view showing the whole and the inside of the optical semiconductor device according to the present invention. FIG. 4A is a perspective view showing an optical semiconductor device according to the present invention. 4B is a cross-sectional view taken along the line C-C ′ of the optical semiconductor device according to FIG. 4A. FIG. 5A is a cross-sectional view of an optical semiconductor device according to the present invention. FIG. 5B is a partially enlarged cross-sectional view of the optical semiconductor device according to FIG. 5A.

  The best mode for carrying out the present invention will be described below with reference to the drawings. However, the form shown below illustrates the optical semiconductor device and the manufacturing method thereof of the present invention, and the present invention is not limited to the following form.

  Moreover, this specification does not limit the member shown by the claim to the member of embodiment. In particular, the dimensions, materials, shapes, relative arrangements, and the like of the components described in the embodiments are not intended to limit the scope of the present invention only to the extent that there is no limited description, It is just an example. It should be noted that the size and positional relationship of the members shown in each drawing may be exaggerated for clarity of explanation. Furthermore, in the following description, the same name and symbol indicate the same or the same members, and detailed description thereof will be omitted as appropriate.

<Embodiment 1>
An optical semiconductor device (light emitting device) 100 of this embodiment is shown in FIGS. 1A and 1B. 1A is a perspective view of the light-emitting device 100, and FIG. 1B is a cross-sectional view taken along the line AA ′ of the light-emitting device 100 shown in FIG. 1A.

  In the present embodiment, as shown in FIGS. 1A and 1B, the light emitting device 100 includes a light emitting element 103, first conductive members 101 and 101 ′ electrically connected to the light emitting element 103, and a first A second conductive member 102 on which the light emitting element 103 is placed, spaced apart from the conductive members 101 and 101 ′, and the first conductive member 101, 101 ′ and the second conductive member 102 covering the light emitting element 103 and And a sealing member 104 in contact therewith. A base 106 made of a resin capable of blocking light from the light emitting element 103 is provided between the first conductive members 101 and 101 ′ and the second conductive member 102.

(Substrate)
In this embodiment mode, the base 106 is a resin capable of blocking light from the light emitting element 103 by adding various light-shielding fillers and the like, and includes the first conductive members 101 and 101 ′ and the second conductive member 101. Provided between the conductive members 102. By providing the light-shielding base 106 at such a position, light from the light emitting element 103 can be prevented from leaking out from the lower surface side of the light emitting device 100, and light extraction efficiency in the upper surface direction can be improved. Can do.

  The thickness of the base 106 may be a thickness that can suppress light leakage to the lower surface side of the light emitting device 100. The base 106 is in contact with both the side surfaces of the first conductive members 101 and 101 ′ and the side surface of the second conductive member 102, that is, the sealing member 104 is in contact with the first conductive members 101 and 101 ′. It is preferable that it is provided so as not to be interposed between the first conductive member 102 and the base 106 or between the second conductive member 102 and the base 106.

  When the widths of the first conductive members 101 and 101 ′ and the second conductive member 102 are different from the width of the light emitting device 100, for example, as shown in FIG. 1A, the width of the first conductive members 101 and 101 ′ is the light emitting device 100. When the side surfaces of the first conductive members 101 and 101 ′ and the side surfaces of the light emitting device 100 are spaced apart from each other, a base can be provided also in that portion. By doing in this way, the lower surface of the light emitting device 100 is formed with the first conductive members 101 and 101 ′, the base body 106, and the second conductive member 102 as outer surfaces. Can be efficiently suppressed.

  The base 106 may be any member as long as light from the light emitting element can be blocked. However, a member having a small difference in linear expansion coefficient from the support substrate is preferable. Furthermore, it is preferable to use an insulating member. As a preferable material, a resin such as a thermosetting resin or a thermoplastic resin can be used. In particular, when the conductive member has a very thin thickness of about 25 μm to 200 μm, a thermosetting resin is preferable, and an extremely thin substrate can be obtained. More specifically, (a) an epoxy resin composition, (b) a silicone resin composition, (c) a modified epoxy resin composition such as a silicone-modified epoxy resin, and (d) a modified silicone resin composition such as an epoxy-modified silicone resin. Product, (e) polyimide resin composition, (f) modified polyimide resin composition, and the like.

  In particular, a thermosetting resin is preferable, and a resin described in JP-A-2006-156704 is preferable. For example, among thermosetting resins, epoxy resins, modified epoxy resins, silicone resins, modified silicone resins, acrylate resins, urethane resins and the like are preferable. Specifically, (i) an epoxy resin composed of triglycidyl isocyanurate and hydrogenated bisphenol A diglycidyl ether, and (ii) hexahydrophthalic anhydride, 3-methylhexahydrophthalic anhydride, 4-methylhexahydrophthalic anhydride It is preferable to use a solid epoxy resin composition containing a colorless and transparent mixture in which an acid anhydride composed of an acid is dissolved and mixed so as to be equivalent. Furthermore, with respect to 100 parts by weight of these mixtures, 0.5 parts by weight of DBU (1,8-Diazabicyclo (5,4,0) undecene-7) as a curing accelerator, 1 part by weight of ethylene glycol as a co-catalyst, oxidation A solid epoxy resin composition in which 10 parts by weight of a titanium pigment and 50 parts by weight of glass fiber are added and partially cured by heating to form a B stage is preferable.

  Moreover, the thermosetting epoxy resin composition which has the epoxy resin containing a triazine derivative epoxy resin as an essential component as described in international publication number WO2007 / 015426 is preferable. For example, it is preferable to include a 1,3,5-triazine nucleus derivative epoxy resin. In particular, an epoxy resin having an isocyanurate ring is excellent in light resistance and electrical insulation. It is desirable to have a divalent, more preferably a trivalent epoxy group for one isocyanurate ring. Specifically, tris (2,3-epoxypropyl) isocyanurate, tris (α-methylglycidyl) isocyanurate, or the like can be used. The softening point of the triazine derivative epoxy resin is preferably 90 to 125 ° C. These triazine derivative epoxy resins may be used in combination with a hydrogenated epoxy resin or other epoxy resins. Furthermore, in the case of a silicone resin composition, a silicone resin containing a methyl silicone resin is preferable.

  In particular, the case where a triazine derivative epoxy resin is used will be specifically described. It is preferable to use an acid anhydride that acts as a curing agent for the triazine derivative epoxy resin. In particular, light resistance can be improved by using an acid anhydride which is non-aromatic and does not have a carbon-carbon double bond. Specific examples include hexahydrophthalic anhydride, methylhexahydrophthalic anhydride, trialkyltetrahydrophthalic anhydride, and hydrogenated methylnadic acid anhydride. In particular, methylhexahydrophthalic anhydride is preferred. Moreover, it is preferable to use antioxidant, for example, a phenolic-type and sulfur-type antioxidant can be used. Moreover, as a curing catalyst, a well-known thing can be used as a curing catalyst of an epoxy resin composition.

And the filler for providing light-shielding property in these resin, and various additives can be mixed as needed. In the present invention, these are referred to as a light-shielding resin constituting the base 106. For example, light can be transmitted by mixing fine particles such as TiO ₂ , SiO ₂ , Al ₂ O ₃ , MgO, MgCO ₃ , CaCO ₃ , Mg (OH) ₂ , and Ca (OH) ₂ as a filler (filler). You can adjust the rate. It is preferable to shield about 60% or more of light from the light emitting element, more preferably about 90%. Note that the substrate 106 may either reflect or absorb light. When the optical semiconductor device is used for illumination or the like, it is preferable to shield it by reflection. In that case, the reflectance with respect to the light from the light emitting element is preferably 60% or more, more preferably 90% or more.

  Various fillers as described above can be used alone or in combination of two or more. For example, it is possible to use a combination of a filler for adjusting the reflectance and a filler for adjusting the linear expansion coefficient as will be described later.

For example, when TiO ₂ is used as a white filler, it is preferably added in an amount of 10 to 30 wt%, more preferably 15 to 25 wt%. TiO ₂ may be either a rutile type or an anatase type. The rutile type is preferable from the viewpoint of light shielding properties and light resistance. Furthermore, when it is desired to improve dispersibility and light resistance, a filler modified by surface treatment can also be used. For the surface treatment of the filler made of TiO _2, hydrated oxides such as alumina, silica and zinc oxide, oxides and the like can be used. In addition to these it is preferable to use SiO ₂ in the range of 60～80Wt% as a filler, further, preferably used 65~75wt%. As the SiO _2, less amorphous silica coefficient of linear expansion than the crystalline silica is preferable. Further, a filler having a particle size of 100 μm or less, and further a filler of 60 μm or less is preferable. Furthermore, a spherical filler is preferable, which can improve the filling property when molding the substrate. Further, in the case of use for a display or the like and when it is desired to improve the contrast, a filler that absorbs light of 60% or more, more preferably 90% or more is preferable. In such a case, the filler may be (a) carbon such as acetylene black, activated carbon, graphite, (b) transition metal oxide such as iron oxide, manganese dioxide, cobalt oxide, molybdenum oxide, or (c) colored. Organic pigments can be used according to the purpose. Further, it is preferable to control the linear expansion coefficient of the substrate so that the difference from the linear expansion coefficient of the support substrate to be removed (peeled) before being separated into pieces is reduced. The difference is preferably 30% or less, more preferably 10% or less. When a SUS plate is used as the support substrate, the difference in coefficient of linear expansion is preferably 20 ppm or less, and more preferably 10 ppm or less. In this case, it is preferable to add 70 wt% or more, preferably 85 wt% or more of the filler. Thereby, the residual stress between the support substrate and the base can be controlled (relaxed), so that the warpage of the assembly of optical semiconductors before being separated into pieces can be reduced. By reducing the warpage, internal damage such as cutting of the conductive wire can be reduced, and the positional deviation at the time of singulation can be suppressed, and manufacturing can be performed with high yield. For example, the linear expansion coefficient of the substrate is preferably adjusted to 5 to 25 × 10 ⁻⁶ / K, more preferably 7 to 15 × 10 ⁻⁶ / K. Thereby, it is possible to easily suppress the warpage that occurs during cooling after the base is molded, and it is possible to manufacture with high yield. In addition, in this specification, a linear expansion coefficient refers to the linear expansion coefficient below the glass transition temperature of the base | substrate which consists of light-shielding resin adjusted with various fillers. It is preferable that the linear expansion coefficient in this temperature region is close to the linear expansion coefficient of the support substrate.

  From another point of view, it is preferable to control the linear expansion coefficient of the base so that the difference between the linear expansion coefficients of the first and second conductive members is small. The difference is preferably 40% or less, more preferably 20% or less. Thereby, in the optical semiconductor device after singulation, the first and second conductive members and the base are prevented from peeling off, and an optical semiconductor device having excellent reliability can be obtained.

(First conductive member / second conductive member)
The first and second conductive members function as a pair of electrodes for energizing the optical semiconductor element. In this embodiment, the first conductive member is electrically connected to the optical semiconductor element (light emitting element) using a conductive wire or a bump, and functions as an electrode for supplying power from the outside. The second conductive member is a member on which the light emitting element is mounted directly or indirectly through another member such as a submount, and functions as a support. A case where the second conductive member simply places the light emitting element and does not contribute to energization, and a case where the second conductive member contributes to energization of the light emitting element or the protection element (that is, functions as an electrode). And either. In the first embodiment, the second conductive member is used as a support that does not contribute to conduction.

  In this embodiment, both the first conductive member and the second conductive member form an outer surface on the lower surface of the optical semiconductor device (light emitting device), that is, are not covered with a sealing member or the like and exposed to the outside (lower surface). It is provided to be. The shape and size of the first conductive member and the second conductive member in a top view can be arbitrarily selected according to the size of the light emitting device and the number and size of the light emitting elements to be mounted. . As for the film thickness, it is preferable that the first conductive member and the second conductive member have substantially the same film thickness. Specifically, it is preferably 25 μm or more and 200 μm or less, and more preferably 50 μm or more and 100 μm or less. The conductive member having such a thickness is preferably a plating (plating layer) formed by a plating method, and particularly preferably a laminated plating (layer).

(First conductive member)
In the present embodiment, as shown in FIG. 1A, the first conductive members 101 and 101 ′ are provided one by one on each of the two opposing sides of the light emitting device 100 having a substantially square shape when viewed from above. The first conductive member 101 and the first conductive member 101 ′ are provided so as to sandwich the second conductive member 102 with the base 106 interposed therebetween. Here, since the second conductive member 102 does not contribute to energization and is used as a support for the light emitting element 103, the two first conductive members 101 and 101 ′ function as a pair of positive and negative electrodes.

  The first conductive members 101 and 101 ′ have an upper surface that is electrically connected to the light emitting element 103 via the conductive wires 105 and 105 ′, and a lower surface that forms the outer surface of the light emitting device 100. That is, the first conductive members 101 and 101 ′ are provided so as to be exposed to the outside without being covered with the base 106.

  The upper surfaces of the first conductive members 101 and 101 ′ are portions to which conductive wires 105 and 105 ′ for electrical connection with the light emitting element 103 are joined, and have at least an area necessary for joining. Good. Further, the upper surface of the first conductive members 101 and 101 'may be a flat plane as shown in FIG. 1B, or may have fine irregularities, grooves, holes, or the like. In the case where the electrode of the light-emitting element and the first conductive member are directly electrically connected without using a conductive wire, the first conductive material is formed so as to have a region where the electrode of the light-emitting element can be joined. A member is provided.

  The lower surfaces of the first conductive members 101 and 101 'form the outer surface of the optical semiconductor device, and are preferably substantially flat surfaces. However, fine irregularities or the like may be formed.

  The side surfaces of the first conductive members 101 and 101 'may be flat. However, in consideration of adhesion to the base 106, etc., it is preferable to have a protrusion X as shown in the partially enlarged view of FIG. 1A on the inner side surface of the first conductive members 101, 101 '. The protrusion X is preferably provided at a position separated from the lower surfaces of the first conductive members 101 and 101 ′, thereby preventing problems such as the first conductive members 101 and 101 ′ dropping off from the base 106. Become. Also, instead of the protrusions, the side surfaces of the first conductive member and the second conductive member are inclined so that the lower surface is narrower than the upper surfaces of the first conductive member and the second conductive member, Dropping can be suppressed.

  The protrusion X can be provided at any position as long as it is different from the outer surface of the light emitting device 100 around the first conductive members 101 and 101 ′. For example, it can be provided partially, for example, only on the two opposing side surfaces of the conductive member having a quadrilateral view. Moreover, in order to prevent dropping more reliably, it is preferable to form over the entire periphery of the conductive member except the surface forming the outer surface.

(Second conductive member)
In this embodiment, the second conductive member 102 has an upper surface on which the light emitting element 103 is placed and a lower surface that forms the outer surface of the light emitting device 100, as shown in FIG. 1B. In the present embodiment, the second conductive member 102 does not function as an electrode on the side surface of the second conductive member 102. Therefore, as shown in FIG. 1A, the side surfaces can be provided so that they are all covered with a sealing member, that is, separated from the side surfaces of the light emitting device 100. Thereby, when obtaining the light emitting device separated by cutting, the cutting blade can be cut so as not to come into contact with the second conductive member, so that cutting becomes easy. Further, the second conductive member may be provided so that a part thereof forms the outer surface of the light emitting device 100, that is, reaches the side surface of the light emitting device 100 (not shown). Since the light emitting element is mounted on the second conductive member, heat dissipation can be improved by increasing the area.

  The upper surface of the second conductive member 102 only needs to have an area greater than or equal to the area where the light emitting element 103 can be placed. In addition to the substantially square shape in top view as shown in FIG. 1A, various shapes such as a polygon, a waveform, or a shape having a notch can be used. In addition, the region where the light emitting element 103 is placed is preferably a flat surface. In addition to the light emitting element, a protective element or the like can be placed on the upper surface of the second conductive member 102.

  The side surface of the second conductive member 102 may be a flat surface, but considering the adhesion to the base 106 and the like, it has a protrusion X as shown in FIG. 1B as in the first conductive member. Is preferred. The protrusion X is preferably provided at a position separated from the lower surface of the second conductive member 102, thereby making it difficult for the second conductive member 102 to fall off the base 106. The protrusion X can be provided at any position around the second conductive member 102. For example, it can be provided partially, for example, only on the two opposing side surfaces of the conductive member having a quadrilateral view. Moreover, in order to prevent dropping more reliably, it is preferable to form over the entire periphery of the second conductive member.

  It is preferable to use the same material for the first conductive member and the second conductive member, which can reduce the number of steps. However, different materials may be used. Specific materials include metals such as copper, aluminum, gold, silver, tungsten, molybdenum, iron, nickel, and cobalt, or alloys thereof (iron-nickel alloy, etc.), phosphor bronze, iron-containing copper, Au-Sn, and the like. Eutectic solder, solder such as SnAgCu and SnAgCuIn, ITO and the like. Among the solder materials, it is preferable that the solder particles are once melted and solidified so that the metal and the solder to be joined are alloyed and the melting point is increased, and the composition is adjusted so as not to be re-dissolved during additional heat treatment such as reflow mounting.

  These can be used alone or as an alloy. Further, a plurality of layers can be provided by laminating (plating). For example, when a light-emitting element is used as the semiconductor element, a material that can reflect light from the light-emitting element is preferably used for the outermost surface of the conductive member. Specifically, gold, silver, copper, Pt, Pd, Al, W, Mo, Ru, Rh and the like are preferable. Furthermore, it is preferable that the outermost conductive member has high reflectivity and high gloss. Specifically, the reflectance in the visible range is preferably 70% or more, and in this case, Ag, Ru, Rh, Pt, Pd, etc. are preferably used. Further, it is preferable that the surface gloss of the conductive member is high. The glossiness is preferably 0.5 or more, more preferably 1.0 or more. The glossiness shown here is a number obtained by using a minute surface color difference meter VSR 300A manufactured by Nippon Denshoku Industries Co., Ltd., 45 ° irradiation, measurement area Φ0.2 mm, and vertical light reception. Moreover, it is preferable to use materials such as eutectic solder plating such as Au, Sn, Sn alloy, AuSn, etc. that are advantageous for mounting on a circuit board or the like on the support substrate side of the conductive member.

  Further, an intermediate layer may be formed between the outermost surface (uppermost layer) of the conductive member and the support substrate side (lowermost layer). In order to improve the mechanical strength of the conductive member and the light emitting device, it is preferable to use a metal having high corrosion resistance, for example, Ni for the intermediate layer. Moreover, in order to improve heat dissipation, it is preferable to use copper with high thermal conductivity for the intermediate layer. Thus, it is preferable to use a suitable member for the intermediate layer according to the purpose and application. Also for this intermediate layer, Pt, Pd, Al, W, Ru, Pd, etc. can be used in addition to the above metals. As the intermediate layer, a metal having good adhesion to the metal of the uppermost layer or the lowermost layer may be laminated. The intermediate layer is preferably formed thicker than the uppermost layer or the lowermost layer. In particular, it is preferably formed at a ratio in the range of 80% to 99% of the entire film thickness of the conductive member, and more preferably in the range of 90% to 99%.

Particularly, in the case of a plating layer made of metal, the linear expansion coefficient is defined by the composition thereof, and therefore, the lowermost layer and the intermediate layer preferably have a linear expansion coefficient that is relatively close to that of the support substrate. For example, when SUS430 having a linear expansion coefficient of 10.4 × 10 ⁻⁶ / K is used as the support substrate, the conductive member thereon includes the following metal (main component) laminated structure: can do. From the bottom layer side, Au (0.04 to 0.1 μm) having a linear expansion coefficient of 14.2 × 10 ⁻⁶ / K, and a linear expansion coefficient of 12.8 × 10 ⁻⁶ / K as the first intermediate layer Ni (or Cu having a linear expansion coefficient of 16.8 × 10 ⁻⁶ / K) (25 to 100 μm), Au (0.01 to 0.07 μm) as the second intermediate layer, and a linear expansion coefficient of 119. A laminated structure such as Ag (2 to ⁶ μm) of 7 × 10 ⁻⁶ / K is preferable. Although Ag of the uppermost layer has a linear expansion coefficient that is significantly different from that of other layers of metal, Ag is used because priority is given to the reflectance of light from the light emitting element. Since the uppermost layer Ag has a very thin thickness, the influence on the warp is extremely weak. Therefore, there is no practical problem.

(Sealing member)
The sealing member covers the light emitting element and is provided so as to be in contact with the first conductive member and the second conductive member. The sealing member is a member that protects electronic components such as a light emitting element, a light receiving element, a protective element, and a conductive wire from dust, moisture, external force, and the like.
As a material for the sealing member, a material having a light-transmitting property capable of transmitting light from the light-emitting element and having light resistance that is not easily deteriorated by them is preferable. Specific examples of the material include a silicone resin composition, a modified silicone resin composition, an epoxy resin composition, a modified epoxy resin composition, and an acrylic resin composition, which have a light-transmitting property capable of transmitting light from a light-emitting element. An insulating resin composition can be mentioned. In addition, a silicone resin, an epoxy resin, a urea resin, a fluororesin, and a hybrid resin containing at least one of these resins can be used. Furthermore, it is not limited to these organic materials, and inorganic materials such as glass and silica sol can also be used. In addition to such materials, a colorant, a light diffusing agent, a light reflecting material, various fillers, a wavelength conversion member (fluorescent member), and the like can be included as desired. The filling amount of the sealing member may be an amount that covers the electronic component.

  The shape of the outer surface of the sealing tree member can be variously selected according to the light distribution characteristics and the like. For example, the directivity can be adjusted by making the upper surface into a convex lens shape, a concave lens shape, a Fresnel lens shape, or the like. In addition to the sealing member, a lens member may be provided. Furthermore, when using a molded body with a phosphor (for example, a plate-shaped molded body with a phosphor, a dome-shaped molded body with a phosphor, etc.), a material excellent in adhesion to the molded body with a phosphor is used as a sealing member. It is preferable to select. In addition to the resin composition, an inorganic substance such as glass can be used as the phosphor-containing molded body.

  In addition, although the sealing member mainly used for a light-emitting device was demonstrated, it is substantially the same as the above also about a light-receiving device. In the case of a light receiving device, a colored filler such as white or black may be contained in the sealing member for the purpose of increasing the light incident efficiency or avoiding secondary reflection inside the light receiving device. Moreover, in order to avoid the influence of visible light, it is preferable to use a black colored filler-containing sealing member for the infrared light emitting device and the infrared detecting device.

(Joining member)
The joining member is a member for placing and connecting a light emitting element, a light receiving element, a protection element, and the like on the first conductive member and the second conductive member. Either a conductive bonding member or an insulating bonding member can be selected depending on the substrate of the element to be placed. For example, in the case of a semiconductor light emitting device in which a nitride semiconductor layer is stacked on sapphire that is an insulating substrate, the bonding member may be insulating or conductive. When a conductive substrate such as a SiC substrate is used, conduction can be achieved by using a conductive bonding member. As the insulating bonding member, an epoxy resin composition, a silicone resin composition, a polyimide resin composition, a modified resin thereof, a hybrid resin, or the like can be used. When these resins are used, a metal layer having a high reflectance such as an Al or Ag film or a dielectric reflecting film can be provided on the back surface of the light emitting element in consideration of deterioration due to light or heat from the semiconductor light emitting element. In this case, methods such as vapor deposition, sputtering, and bonding of thin films can be used. As the conductive bonding member, a conductive paste such as silver, gold, or palladium, a solder such as Au—Sn eutectic, a brazing material such as a low melting point metal, or the like can be used. Furthermore, when using a translucent joining member among these joining members, the fluorescent member which absorbs the light from a semiconductor light-emitting element and light-emits light of a different wavelength can also be contained in it.

(Conductive wire)
As the conductive wire that connects the electrode of the light emitting element to the first conductive member and the second conductive member, metals such as gold, copper, platinum, and aluminum, and alloys thereof can be used. In particular, it is preferable to use gold excellent in thermal resistance.

(Wavelength conversion member)
The sealing member may contain a fluorescent member that emits light having a different wavelength by absorbing at least a part of light from the semiconductor light emitting element as the wavelength converting member.
As the fluorescent member, it is more efficient to convert the light from the semiconductor light emitting element into a longer wavelength. However, the present invention is not limited to this, and various fluorescent members such as one that converts light from a semiconductor light emitting element into a short wavelength or one that further converts light converted by another fluorescent member can be used. Such a fluorescent member may be formed of a single layer of a single type of fluorescent material or a single layer in which two or more types of fluorescent materials are mixed. Two or more single layers containing the same may be laminated, or two or more single layers each containing two or more kinds of fluorescent substances may be laminated.

In the case of using a semiconductor light-emitting element having a nitride-based semiconductor as a light-emitting layer as the light-emitting element, a fluorescent member that absorbs light from the light-emitting element and converts the wavelength into light having a different wavelength can be used. For example, a nitride phosphor or an oxynitride phosphor mainly activated by a lanthanoid element such as Eu or Ce can be used. More specifically, (a) Eu-activated α or β sialon type phosphor, various alkaline earth metal nitride silicates, various alkaline earth metal aluminum silicon nitrides (eg, CaSiAlN ₃ : Eu, SrAlSi ₄ N ₇ : Eu), (b) lanthanoid elements such as Eu, alkaline earth metal halogenapatites mainly activated by transition metal elements such as Mn, alkaline earth metal halosilicates, alkaline earth metal silicates, Alkaline earth metal halogen borate, alkaline earth metal aluminate, alkaline earth metal sulfide, alkaline earth metal thiogallate, alkaline earth metal silicon nitride, germanate, or (c) lanthanoids such as Ce Rare earth aluminates, rare earth silicates, alkaline earth metal rare earth silicates activated mainly by elements The salt (d) is preferably at least one selected from organic and organic complexes mainly activated by a lanthanoid element such as Eu. A YAG phosphor that is a rare earth aluminate phosphor mainly activated by a lanthanoid element such as Ce is preferable. YAG-based phosphors include Y ₃ Al ₅ O ₁₂ : Ce, (Y _0.8 Gd _0.2 ) ₃ Al ₅ O ₁₂ : Ce, Y ₃ (Al _0.8 Ga _0.2 ) ₅ O ₁₂ : Ce , (Y, Gd) ₃ (Al, Ga) ₅ O ₁₂ . Further, there are Tb ₃ Al ₅ O ₁₂ : Ce, Lu ₃ Al ₅ O ₁₂ : Ce, etc. in which a part or all of Y is substituted with Tb, Lu, or the like. Furthermore, phosphors other than the above phosphors and having the same performance, function, and effect can be used.

Moreover, what apply | coated fluorescent substance to other molded objects, such as glass and a resin composition, can also be used. Furthermore, a molded body containing a phosphor can also be used. Specifically, glass containing phosphor, YAG sintered body, sintered body such as YAG and Al ₂ O ₃ , SiO ₂ , B ₂ O ₃ , crystallized inorganic bulk in which YAG is precipitated in an inorganic melt. The body can be used. A phosphor integrally formed with epoxy, silicone, hybrid resin, or the like may be used.

(Semiconductor element)
In the present invention, the semiconductor element has various structures such as a structure in which positive and negative electrodes are formed on the same surface side, a structure in which positive and negative electrodes are formed on different surfaces, and a structure in which a substrate different from the growth substrate is bonded. A semiconductor element can be used. It is preferable to use a semiconductor light emitting element (also simply referred to as a light emitting element or a light emitting diode) or a semiconductor light receiving element (simply a light receiving element) having such a structure.

A semiconductor light emitting device having an arbitrary wavelength can be selected. For example, a blue, a green light emitting element, ZnSe and nitride semiconductor _{(In X Al Y Ga 1-} X-Y N, 0 ≦ X, 0 ≦ Y, X + Y ≦ 1), can be used GaP. As the red light emitting element, GaAlAs, AlInGaP, or the like can be used. Furthermore, a semiconductor light emitting element made of a material other than this can be used. The composition, emission color, size, number, and the like of the light-emitting element to be used can be appropriately selected depending on the purpose.

In the case of a light-emitting device having a fluorescent material, a nitride semiconductor (In _X Al _Y Ga _1- XYN, 0 ≦ X, 0 ≦ Y, X + Y ≦ 1) is preferred. Various emission wavelengths can be selected depending on the material of the semiconductor layer and the degree of mixed crystal.

  In addition, a light-emitting element that outputs ultraviolet light or infrared light as well as light in the visible light region can be used. Furthermore, a light receiving element or the like can be mounted together with the light emitting element or alone.

  Examples of the light receiving element include a photo IC, a photodiode, a phototransistor, a CCD (charge coupled device) image sensor, a CMOS image sensor, and a Cd cell.

(Support substrate)
The support substrate is a plate-like or sheet-like member used for forming the first and second conductive members. Since the support substrate is removed before being singulated, it is not provided in the optical semiconductor device. As the support substrate, in addition to a conductive metal plate such as a SUS plate, a substrate in which a conductive film is formed by sputtering or vapor deposition on an insulating plate such as polyimide can be used. Alternatively, an insulating plate member to which a metal thin film or the like can be attached can be used. In any case, the support substrate is removed at the final stage of the process. That is, the support substrate needs to be peeled off from the first and second conductive members and the base. For this reason, it is necessary to use a foldable member as the support substrate, and it is preferable to use a plate-like member having a film thickness of about 10 μm to 300 μm depending on the material. As the support substrate, in addition to the above SUS plate, a metal plate such as iron, copper, silver, kovar, nickel, or a resin sheet made of polyimide to which a metal thin film can be attached is preferable. In particular, it is preferable to use various stainless steels such as altensite, ferrite, and austenite. Particularly preferred is ferritic stainless steel. Particularly preferred is 400 series or 300 series stainless steel. More ^{specifically, SUS430 (10.4 × 10 -6 /K),SUS444(10.6×10} -6 /K),SUS303(18.7×10 -6 /K),SUS304(17.3 × 10 ⁻⁶ / K) or the like is preferably used. When the 400 series stainless steel is subjected to an acid treatment as a pretreatment for plating, the surface becomes more rough than the 300 series stainless steel. Accordingly, when a plating layer is formed on 400 series stainless steel that has been subjected to acid treatment, the surface of the plating layer is also likely to be rough. Thereby, adhesiveness with resin which comprises a sealing member and a base | substrate can be improved. In addition, the surface of 300 series is hardly roughened by acid treatment. For this reason, if 300 series stainless steel is used, it is easy to improve the glossiness of the surface of the plating layer, whereby the reflectance from the light emitting element is improved and a light emitting device with high light extraction efficiency can be obtained.

  Moreover, when raising the surface glossiness of the 1st, 2nd electrically-conductive member, it forms using methods, such as plating, vapor deposition, and sputtering. In order to further increase the glossiness, the surface of the support substrate is preferably smooth. For example, when SUS is used as the support substrate, the outermost surface of the conductive member having a high surface gloss can be obtained by using SUS having a relatively low crystal grain boundary in the 300s.

  Moreover, in order to relieve the warp after the resin molding, the support substrate can be processed into slits, grooves and corrugations.

<Production method 1-1>
Hereinafter, the manufacturing method of the light-emitting device of this invention is demonstrated using figures. According to the method of manufacturing an optical semiconductor device of the present invention, a first step of forming a plurality of first and second conductive members spaced apart from each other on a support substrate, and a light shielding between the first and second conductive members. A second step of providing a base made of a transparent resin, a third step of placing the optical semiconductor element on the first and / or second conductive members, and sealing the optical semiconductor element with a translucent resin. It has the 4th process covered with a stop member, and the 5th process of separating an optical semiconductor device into pieces after removing a support substrate, It is characterized by the above-mentioned. 1C and 1D are diagrams illustrating a process of forming a light emitting device assembly 1000. By cutting the aggregate 1000 into pieces, the light-emitting device 100 described in Embodiment 1 can be obtained.

1. First Step First, as shown in FIG. 1C (a), a support substrate 1070 made of a metal plate or the like is prepared.
A resist 1080 is applied as a protective film on the surface of the support substrate. The thickness of the first conductive member and the second conductive member to be formed later can be adjusted by the thickness of the resist 1080. Here, the resist 1080 is provided only on the upper surface (the surface on the side where the first conductive member or the like is formed) of the support substrate 1070, but it may be formed on the lower surface (the surface on the opposite side). In that case, it is possible to prevent a conductive member from being formed on the lower surface by plating described later by providing a resist on almost the entire surface on the opposite side.

  The protective film (resist) to be used may be either a positive type or a negative type in the case of a resist formed by photolithography. Although a method using a positive resist is described here, a positive resist and a negative resist may be used in combination. In addition, a method of attaching a resist formed by screen printing or a sheet-like resist can be used.

  After the applied resist is dried, a mask 1090 having an opening is disposed directly or indirectly on the resist, and exposure is performed by irradiating ultraviolet rays as indicated by arrows in the drawing. As the ultraviolet rays used here, a suitable wavelength can be selected depending on the sensitivity of the resist 1070 and the like. Thereafter, a resist 1080 having an opening K as shown in FIG. 1C (b) is formed by processing with an etching agent. Here, if necessary, acid activation treatment or the like may be performed.

  Next, by plating using a metal, the first conductive member 1010 and the second conductive member 1020 are formed in the opening K of the resist 1080 as shown in FIG. 1C (c). At this time, the plating can be performed so as to be thicker than the film thickness of the resist 1080 by adjusting the plating conditions. Thus, the conductive member can be formed up to the upper surface of the resist (protective film), and the protrusion X as shown in FIG. 1A can be formed. The plating method can be appropriately selected depending on the metal to be used or a method known in the art depending on the target film thickness or flatness. For example, electrolytic plating, electroless plating, or the like can be used. In particular, it is preferable to use electrolytic plating, which makes it easy to remove the resist (protective film) and to form the conductive member in a uniform shape. Further, in order to improve the adhesion with the outermost layer (for example, Ag), it is preferable to form an intermediate layer (for example, Au, Ag) on the lower layer by strike plating.

  After plating, the protective film 1080 is washed and removed, thereby forming the first conductive member 1010 and the second conductive member 1020 that are separated from each other as shown in FIG. 1C (d). In addition to the plating as described above, the projecting portion X can be formed by crushing, a baking method after printing a metal paste, or the like.

2. Second Step Next, as shown in FIG. 1D (a), a base 1060 capable of reflecting light from the light emitting element is provided between the first conductive member 1010 and the second conductive member 1020. The substrate can be formed by a method such as injection molding, transfer molding, or compression molding.

  For example, when the base 1060 is formed by transfer molding, a support substrate on which a plurality of first and second conductive members are formed is set so as to be sandwiched between molds including an upper mold and a lower mold. At this time, you may set in a metal mold | die via a release sheet | seat. Resin pellets, which are base materials, are inserted into the mold, and the support substrate and the resin pellets are heated. After melting the resin pellets, pressurize and fill the mold. The heating temperature, heating time, pressure, and the like can be appropriately adjusted according to the composition of the resin used. It can take out from the metal mold | die after hardening and the molded article shown to FIG. 1D (a) can be obtained.

3. Third Step Next, as shown in FIG. 1D (b), the light emitting element 1030 is bonded onto the second conductive member 1020 using a bonding member (not shown), and the first is performed using the conductive wire 1050. The conductive member 1010 is connected. Although the light emitting element having positive and negative electrodes on the same surface side is used here, a light emitting element having positive and negative electrodes formed on different surfaces can also be used.

4). Fourth Step After that, the sealing member 1040 is formed by a method such as transfer molding, potting, and printing so as to cover the light emitting element 1030 and the conductive wire 1050. Although the sealing member has a single-layer structure here, it may have a multilayer structure of two or more layers having different compositions and characteristics.
After the sealing member 1040 is cured, the support substrate 1070 is peeled off and removed as shown in FIG. 1D (c).

5. Through the steps such as the fifth step and above, an assembly 1000 of semiconductor devices (light emitting devices) as shown in FIG. 1D (d) can be obtained. Finally, by cutting at a position indicated by a broken line in FIG. 1D (d) into pieces, a light emitting device 100 as shown in FIG. 1A can be obtained, for example. Various methods such as dicing with a blade and dicing with a laser beam can be used as the method of dividing into pieces.

  In addition, in FIG. 1D (d), although it cut | disconnected in the position containing a conductive member, you may cut | disconnect not only in this but in the position spaced apart from a conductive member. If the conductive member is cut at a position including the conductive member, the conductive member is exposed also on the side surface of the optical semiconductor device, and solder or the like is easily joined. In addition, when cutting at a position away from the conductive member, since only the resin such as the base and the sealing member is cut, it is easier than cutting the conductive member (metal) and the resin together. Can be cut.

<Production method 1-2>
In the manufacturing method 1-2, a method of forming the first conductive member and the second conductive member by etching will be described.

  A thin film of a conductive member such as a copper foil is attached to a plate-like support substrate made of an insulating member such as polyimide. Further, a sheet-like protective film (dry resist sheet or the like) is pasted on this conductive member, exposed using a mask having an opening, and the protective film of a portion exposed using a cleaning solution such as a weak alkaline solution Remove. Thereby, a protective film having an opening is formed on the conductive member.

  Next, the conductive member is etched by immersing the conductive member together with the supporting substrate in an etchant that can be etched. Finally, by removing the protective film, first and second conductive members that are separated from each other are formed on the support substrate.

<Embodiment 2>
2A and 2B show an optical semiconductor device (light emitting device) 200 according to the second embodiment. 2A is a perspective view showing the inside of the light emitting device 200 according to the present invention, and FIG. 2B is a cross-sectional view taken along the line CC ′ in a state where the concave portion of the light emitting device 200 according to FIG. 2A is sealed.

  In Embodiment 2, the light emitting device 200 includes (a) a light emitting element 203 and a protective element 210, (b) a first conductive member 201 electrically connected to the light emitting element 203 and the protective element 210, and (c) ) A second conductive member 202 that is spaced from the first conductive member 201 and on which the light emitting element 203 is placed, and (d) the first conductive member 201 and the second conductive member 202 that cover the light emitting element 203. And a sealing member 204 in contact with. The lower surfaces of the first conductive member 201 and the second conductive member 202 form the outer surface of the light emitting device 200. Further, part of the side surfaces of the first conductive member 201 and the second conductive member 202 also form the outer surface of the light emitting device 200. A base body 206 made of a resin capable of blocking light from the light emitting element 203 is formed between the first conductive member 201 and the second conductive member 202. The base body 206 has a protruding portion 206 b higher than the upper surfaces of the first conductive member 201 and the second conductive member 202 at a position away from the light emitting element 203. As a result, the recess S1 is formed in the light emitting device 200 by the protrusion 206b of the base body 206. The recess S1 can suppress light from being emitted to the side surface of the light emitting device 200, and can emit light toward the top surface.

  As shown in FIG. 2B, it is preferable that the protrusion 206b has an inclined inner surface so as to be a recess S1 that expands toward the upper surface. This makes it easy to reflect light toward the top surface of the light emitting device. In addition, about the member etc. which are used in Embodiment 2, the thing similar to Embodiment 1 can be used.

<Manufacturing method 2>
Hereinafter, a method for manufacturing the light emitting device 200 of the present invention will be described with reference to the drawings. FIG. 2C is a diagram illustrating a process of forming the light emitting device assembly 2000. By cutting the assembly 2000, the light emitting device 200 described in Embodiment 2 can be obtained.

1. In the 1st process manufacturing method 2, about the 1st process, it can carry out similarly to manufacturing methods 1-1 and 1-2.

2. Second Step In the second step, as shown in FIG. 2C (a), when the bottom surface portion 2060a of the base is formed in the second step, the protruding portion 2060b is formed at the same time. In addition, although it forms simultaneously here, you may form the bottom face part 2060a first, and may form the protrusion part 2060b subsequently, or after forming the protrusion part 2060b previously, the bottom face part 2060a may be formed. Also good. It is preferable to use the same light-shielding resin for both, but different light-shielding resins may be used depending on the purpose and application.

  The protruding portion 2060b can be formed by transfer molding using a mold or the like, similarly to the bottom surface portion 2060a of the base. At this time, the protrusion 2060b as shown in FIG. 2C (a) can be formed by using an upper mold having irregularities as the mold.

3. Third Step In the third step, as shown in FIG. 2C (b), the light emitting element 2030 is placed on the first conductive member 2010 in the region surrounded by the protrusion 2060b. The conductive wire 2050 is connected to the upper surfaces of the first and second conductive members in the region surrounded by the same protrusion 2060b.

4). Fourth Step In the fourth step, as shown in FIG. 2C (c), a concave member formed by being surrounded by the protruding portion 2060b is filled with a sealing member made of a translucent resin. Thus, the light emitting element is covered with the sealing member. Here, the sealing member 2040 is provided so as to have substantially the same height as the protruding portion 2060b. However, the present invention is not limited thereto, and the sealing member 2040 may be formed to be lower or higher than the protruding portion. In addition, the upper surface may be a flat surface as described above, or may be formed in a curved shape in which the center is recessed or protruded.

5. Fifth Step In the fifth step, the broken line portion shown in FIG. 2C (d), that is, the protruding portion 2060b is cut into pieces by cutting, and the optical semiconductor device 200 as shown in FIG. 2A is obtained. And Here, the projecting portion 2060b is cut so that the sealing member 2040 is not cut, so that the light extraction direction can be limited only to the upward direction of the optical semiconductor device (light emitting device) 200. Thereby, the extraction of light in the upward direction is efficiently performed. Here, the protruding portion 2060 is cut, but it may be cut at a position where the sealing member 2040 is cut.

<Embodiment 3>
FIG. 3 is a perspective view showing an optical semiconductor device according to the present invention, which is a part cut away so that the inside of the substrate 306 can be seen. In the third embodiment, as shown in FIG. 3, the light emitting element 303 is placed in the recess S <b> 2 surrounded by the base protrusion 306, and the protection element 310 is embedded in the base protrusion 306. It is characterized by that. FIG. 3 is a view showing the inside of a part of the base body 306 of the optical semiconductor device having a substantially rectangular parallelepiped shape as shown in FIG. 2A.

  In the second step, the protective element 310 is placed on the second conductive member 302 and further joined to the first conductive member 301 using the conductive wire 305 before the base is formed. As a result, the protective element 310 can be embedded in the base body 306. In the first embodiment, after the base is formed in the second step, the light emitting element and the protective element are placed in the third step. In this embodiment, the light-emitting element and the protective element are provided in different steps. By providing the protective element so as to be embedded in the substrate as in the present embodiment, the optical semiconductor device itself can be further reduced in size.

<Embodiment 4>
4A is a perspective view showing an optical semiconductor device of the present invention, and FIG. 4B is a cross-sectional view taken along the line CC ′ of FIG. 4A. In the fourth embodiment, as shown in FIGS. 4A and 4B, the base 406 is provided so as to reach the side surface of the optical semiconductor element 403. Here, a protruding portion that protrudes from the upper surface of the first conductive member or the second conductive member is provided over the entire base 406. In such a configuration, the third step, that is, the step of placing the optical semiconductor element on the first and / or second conductive member is replaced with the second step, that is, the first and second steps. It can obtain by performing before the process which provides the base | substrate which consists of light-shielding resin between these electrically-conductive members. As shown in FIGS. 4A and 4B, since the base 406 is provided so as to be substantially the same height as the optical semiconductor element (light emitting element) 403, light is emitted only from the upper surface of the light emitting element. Thereby, light can be extracted more efficiently.

Here, the base body (projecting portion) 406 is provided until the height is substantially the same as that of the light emitting element 403, but the present invention is not limited to this, and the height may be lower than that of the light emitting element 403. In the case where such a base 406 is provided, the sealing member 404 can be cured on the light-emitting element 403 or the base 406 by dropping, printing, or the like. Alternatively, a method of bonding the sealing member 404 formed and cured in a separate process to the base 406 and the light emitting element 403 can be employed. For example, an Al ₂ O ₃ powder and a YAG phosphor powder that are molded into a flat plate shape by compression molding or the like can be used as a sealing member 404 and attached to a light emitting element or a substrate using an adhesive.

  In Embodiment 4, the positive and negative electrodes of the light emitting element 403 are directly bonded to the first and second conductive members using a conductive bonding member without using a conductive wire. In the case where the optical semiconductor element 403 is mounted before the base 406 is formed, by using such a mounting method that does not use a wire, deformation of the wire due to the mold can be prevented.

<Embodiment 5>
FIG. 5A is a sectional view showing an optical semiconductor device of the present invention, and FIG. 5B is a partially enlarged view of FIG. 5A. The optical semiconductor device in the fifth embodiment has the same appearance as the optical semiconductor device shown in FIG. 2A, but is a base formed between the first conductive member 501 and the second conductive member 502. The difference 506 is that the first conductive member 501 and the second conductive member 502 have a protruding portion 506a that is higher than the upper surfaces thereof. A recess having a protruding portion 506b as a side wall is formed around the light emitting element 503. In the concave portion, a protruding portion 506a having a height lower than that of the protruding portion 506b serving as a side wall of the concave portion is provided. As shown in FIG. 5B, the protruding portion 506a is formed so as to cover a part of the upper surface of the first conductive member 501 and the second conductive member 502. By doing in this way, when removing a support substrate in a manufacturing process, it can control that base (projection part) 506a exfoliates. Furthermore, since the base 506a at a position close to the light-emitting element 503 can be thickened, light from the light-emitting element 503 can be prevented from leaking to the bottom surface, and light can be reflected more efficiently. The protruding portion 506a of the base provided between the first conductive member and the second conductive member is preferably set to such a height that the conductive wire 505 does not contact. Moreover, it is preferable to cover part of the upper surfaces of both the first conductive member 501 and the second conductive member 502, but only one of them may be covered. Further, the size, width, position, etc. of the region to be covered can be formed as desired. Further, instead of providing the base 506 between the first conductive member 501 and the second conductive member 502, another member, for example, a sub-mount made of Si, can be connected from the first conductive member to the second conductive member. The light emitting element may be placed thereon. Accordingly, it is possible to suppress light from the light emitting element from leaking to the bottom surface side, and it is possible to reflect light more efficiently.

  According to the method for manufacturing an optical semiconductor device according to the present invention, an optical semiconductor device that is small and light and has excellent light extraction efficiency and contrast can be easily obtained. These optical semiconductor devices include (a) various display devices, (b) lighting fixtures, (c) displays, (d) backlight light sources for liquid crystal displays, and (e) digital video cameras, facsimiles, copiers, It can also be used for an image reading device in a scanner or the like, (f) a projector device, or the like.

100, 200, 300, 400 ... optical semiconductor device (light emitting device)
101, 101 ', 201, 301, 401 ... first conductive member 102, 202, 302, 402 ... second conductive member 103, 203, 303, 403 ... optical semiconductor element (light emitting element)
104, 204, 304, 404 ... Sealing members 105, 105 ', 205, 205', 305, 405 ... Conductive wires 106, 206, 306, 406 ... Base 206a ... Bottom of base 206b: Base protrusions 210, 310 ... Protection elements 1000, 2000 ... Optical semiconductor device assemblies 1010, 2010 ... 1st conductive members 1020, 2010 ... 2nd conductive members 1030, 2030 ... Optical semiconductor element (light emitting element)
1040, 2040 ... sealing members 1050, 2050 ... conductive wires 1060, 2060 ... base 2060a ... base 2060b ... base projections 1070, 2070 ... support substrate 1080 ..Protective film (resist)
1090 ... Mask X ... Projection S1, S2 ... Concave

Claims (6)

An optical semiconductor device,
An optical semiconductor element;
A first conductive member having a lower surface forming an outer surface of the optical semiconductor device and having a thickness of 25 μm to 200 μm;
A second conductive member spaced from the first conductive member, a lower surface forming an outer surface of the optical semiconductor device, and a thickness of 25 to 200 μm;
A substrate made of a light-shielding resin having a reflectance of 60% or more with respect to light from the optical semiconductor element, and provided so as to shield light between the first conductive member and the second conductive member; An optical semiconductor device comprising:
The positive electrode and the negative electrode of the optical semiconductor element are joined to the first conductive member and the second conductive member without a conductive wire, respectively.
The base is made of the light-shielding resin and has a protruding portion that protrudes from the upper surfaces of the first conductive member and the second conductive member. The protruding portion serves as an outer surface of the optical semiconductor device. The optical semiconductor device extends toward the side surface of the optical semiconductor element until it reaches the optical semiconductor element.   The optical semiconductor device according to claim 1, wherein a height of the protruding portion is substantially the same as that of the optical semiconductor element. 3. The optical semiconductor device according to claim 1, wherein the base and the first conductive member or the second conductive member are flush with each other in at least one of the side surfaces of the optical semiconductor device.   4. The optical semiconductor device according to claim 1, wherein the first conductive member or the second conductive member has a side protrusion of the first conductive member or the second conductive member. 5.   5. The optical semiconductor device according to claim 4, wherein the protrusion is provided at a position separated from a lower surface of the first conductive member or the second conductive member.     The said optical semiconductor device is a rectangular parallelepiped, The optical semiconductor device as described in any one of Claims 1-5.

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