JP5493549B2 - Light emitting device and manufacturing method thereof - Google Patents

Description

  The present invention relates to a light-emitting device that can be used for a display device, a lighting fixture, a display, a backlight light source of a liquid crystal display, and the like. Regarding the method.

  In recent years, along with the downsizing and weight reduction of electronic devices, various types of light emitting devices (light emitting diodes) mounted thereon have been developed. In these light emitting devices, for example, a light emitting element is placed on a double-sided through-hole printed board on which a pair of metal conductor patterns formed on both sides of an insulating substrate is formed, and light is emitted from the metal conductor pattern using a wire or the like. It has a structure for electrically connecting the element.

  However, it is essential for such a light-emitting device to use a double-sided through-hole printed circuit board, and since this double-sided through-hole printed circuit board has a thickness of at least about 0.1 mm, the surface-mount type light-emitting device is thoroughly implemented. This is a factor that hinders the reduction in thickness. Therefore, a light emitting device having a structure that does not use such a printed circuit board has been developed (for example, Patent Document 1).

JP 2005-79329 A

  The light-emitting device disclosed in Patent Document 1 forms a thin metal film on a substrate by vapor deposition or the like, uses this as an electrode, and seals it with a light-transmitting resin together with a light-emitting element. Thinning is possible compared to the device.

  However, since only the translucent resin is used, the light escapes from the light emitting element in the lower surface direction, and the light extraction efficiency tends to be lowered. Although a structure in which a mortar-shaped metal film is provided to reflect light is disclosed, in order to provide such a metal film, it is necessary to provide unevenness on the substrate. Then, since the light emitting device is miniaturized, the unevenness becomes extremely fine, which makes it difficult to process, and the uneven structure easily breaks when the substrate is peeled off, resulting in a decrease in yield. Cheap. Moreover, when using for a display etc., when only translucent resin is used, contrast will deteriorate easily.

  In recent years, there has been a demand for higher output and the output of the light emitting element tends to be improved. However, the amount of heat generated when obtaining such high output light emission is also increasing. Therefore, the heat resistance of each member which comprises a light-emitting device is requested | required.

In order to solve the above-described problems, the method for manufacturing a semiconductor light emitting device of the present invention has a diffusion coefficient with Au in the opening after a protective film having a plurality of openings is formed on a support substrate made of stainless steel. A metal layer containing a metal smaller than the metal in the support substrate is formed, and a first layer containing Au as a main component and a second layer containing a metal different from Au stacked on the first layer as a main component. And a second step of providing a base made of a light-shielding resin on a support substrate exposed between the plurality of conductive members after removing the protective film, A third step of placing the light emitting element on the upper surface of the conductive member or the base via the adhesive member containing metal and heating the adhesive member at a temperature lower than the melting point of the metal layer; A fourth step of covering the light emitting element with a translucent sealing member, and a metal The support substrate is removed by peeling between the first layer and the first layer, and the lower surface of the base is protruded downward from the lower surface of the conductive member by removing, and then the light emitting device is separated. And a fifth step. Accordingly, a light-emitting device that is thin, has high light emission efficiency, and excellent heat resistance can be obtained with high yield.

  The light emitting device according to claim 7 of the present invention is obtained by the method for manufacturing a light emitting device according to any one of claims 1 to 6.

  According to the present invention, a thin light-emitting device can be easily formed with high yield. In addition, even a thin light-emitting device can prevent light from the light-emitting element from leaking from the lower surface side, so that a light-emitting device with improved light extraction efficiency and a light-emitting device with improved contrast are available. can get. In addition, a light emitting device having excellent heat resistance can be easily obtained.

FIG. 1A is a perspective view showing the whole and the inside of a light emitting device according to the present invention. 1B is a cross-sectional view of the light emitting device according to FIG. 1A taken along the line A-A ′. FIG. 1C is a process diagram illustrating a method for manufacturing a light emitting device according to the present invention. FIG. 1D is a process diagram illustrating a method for manufacturing a light-emitting device according to the present invention. FIG. 2A is a process diagram illustrating a method for manufacturing a light-emitting device according to the present invention. FIG. 2B is a process diagram illustrating a method for manufacturing the light emitting device according to the present invention. FIG. 2C is a cross-sectional view and a partially enlarged view of the light emitting device according to the present invention.

  The best mode for carrying out the present invention will be described below with reference to the drawings. However, the form shown below illustrates the light emitting device of the present invention and the manufacturing method thereof, and the present invention is not limited to the following form.

  Moreover, this specification does not limit the member shown by the claim to the member of embodiment. In particular, the dimensions, materials, shapes, relative arrangements, and the like of the components described in the embodiments are not intended to limit the scope of the present invention only to the extent that there is no limited description, It is just an example. It should be noted that the size and positional relationship of the members shown in each drawing may be exaggerated for clarity of explanation. Furthermore, in the following description, the same name and symbol indicate the same or the same members, and detailed description thereof will be omitted as appropriate.

<Embodiment 1>
A light-emitting device 100 of the present embodiment is shown in FIGS. 1A and 1B. 1A is a perspective view of the light-emitting device 100, and FIG. 1B is a cross-sectional view taken along the line AA ′ of the light-emitting device 100 shown in FIG. 1A.

  In this embodiment mode, the light-emitting device 100 includes a light-emitting element 102, a pair of conductive members 101 having an upper surface that is electrically connected to the light-emitting element 102, and a base 103 that is held in contact with an outer edge of the conductive member 101. Have. The base 103 is a resin capable of blocking light from the light emitting element 102 by adding various light-shielding fillers, etc., and has a recess S composed of a bottom surface portion 103a and a side wall 103b. In FIG. 2, a part of the upper surface of the pair of conductive members 101 is exposed. The lower surface of the conductive member 101 is exposed from the lower surface (back surface) of the base body 103. The light emitting element 102 and the conductive member 101 are electrically connected via a conductive wire 105, and the sealing member 106 is provided in the recess S so as to cover these electronic components.

  Such a light emitting device 100 can be obtained by the following manufacturing method. 1C and 1D are diagrams illustrating a process of forming a light emitting device assembly 1000, and the light emitting device 100 illustrated in FIG. 1A can be obtained by cutting the assembly 1000 into pieces. it can.

1. First Step First, as shown in FIG. 1C (a), a flat support substrate 1070 made of stainless steel is prepared. A metal layer 1080 is formed on the upper surface of the support substrate. The metal layer contains a metal whose diffusion coefficient with Au is smaller than that of the metal in the support substrate, and can use a method such as plating, vapor deposition, sputtering, etc., and a uniform film on almost the entire upper surface of the support substrate. It is preferable to provide the thickness.

  Next, a resist 1090 is applied to the surface of the metal layer as a protective film on the surface of the support substrate. The thickness of the conductive member formed later can be adjusted by the thickness of the resist 1090. Here, the resist 1090 is provided only on the upper surface (surface on which the conductive member is formed) of the support substrate 1070, but may be formed on the lower surface (opposite surface). Thereby, it can prevent that a conductive member is formed in the lower surface side of a support substrate by the below-mentioned plating.

  The protective film (resist) to be used may be either a positive type or a negative type in the case of a resist formed by photolithography. Although a method using a positive resist is described here, a positive resist and a negative resist may be used in combination. In addition, a method of attaching a resist formed by screen printing or a sheet-like resist can be used.

  After the applied resist is dried, a mask 1100 having an opening on the top is directly or indirectly disposed, and exposure is performed by irradiating ultraviolet rays as indicated by arrows in the drawing. For the ultraviolet rays used here, a wavelength suitable for the sensitivity of the resist 1090 and the like can be selected. Thereafter, a protective film 1090 having an opening K is formed as shown in FIG. Here, if necessary, acid activation treatment or the like may be performed.

  Furthermore, after providing the metal layer or after providing the resist, it is preferable to perform a step of heating at a temperature higher than the heating temperature of the third step described later. Preferably, it is performed before providing the resist. The heating temperature is preferably in the range of 340 to 500 ° C, more preferably 380 to 420 ° C. Thereby, the metal layer and the support substrate can be alloyed or the adhesion can be improved, and as a result, the adhesion can be higher than the adhesion between the conductive member and the metal layer, and the support substrate can be removed. In this case, separation between the conductive member and the metal layer can be facilitated, and a light-emitting device can be obtained with high yield.

  Next, as shown in FIG. 1C (c), a first layer mainly composed of gold (Au) and a second layer mainly composed of a metal different from Au are formed thereon by plating. A conductive member 1010 is formed in the opening K of the protective film 1090. At this time, the plating condition can be adjusted so that the thickness of the resist 1090 is larger than that of the resist 1090, whereby the conductive member is formed even on the upper surface of the protective film, and the protrusion is formed on the side surface as shown in FIG. 1A. A conductive member having a part can be formed.

  As a plating method, it can select suitably according to the metal to be used or according to the target film thickness and flatness, and an electrolytic plating and an electroless plating can be used. In particular, it is preferable to use electrolytic plating, which makes it easy to remove the resist (protective film) and to form the conductive member in a uniform shape. Further, in order to improve the adhesion with the uppermost layer (for example, Ag), as a second layer formed under the upper layer (for example, Ag), two layers formed on the Ni (or Cu), for example, Au by strike plating are used. It is preferable to use the second layer.

  After plating, the protective film 1090 is washed and removed, thereby forming conductive members spaced apart from each other as shown in FIG. 1C (d).

2. Second Step Next, as shown in FIG. 1D (a), a base body 1030 made of a light shielding resin capable of reflecting light from the light emitting element is formed. Here, the base portion 1030a of the base and the side wall 1030b of the base are formed at the same time between the conductive members 1010. However, they may be formed in separate steps, and in that case, it is preferable to use the same light-shielding resin. However, different light-shielding resins may be used depending on the purpose and application.

  As a method for forming the substrate, methods such as injection molding, transfer molding, and compression molding can be used. For example, when the base 1030 is formed by transfer molding, the support substrate on which a plurality of conductive members are formed is set so as to be sandwiched in a mold composed of an upper mold and a lower mold. At this time, you may set in a metal mold | die via a release sheet | seat. Resin pellets, which are base materials, are inserted into the mold, and the support substrate and the resin pellets are heated. After melting the resin pellets, pressurize and fill the mold. The heating temperature, heating time, pressure, and the like can be appropriately adjusted according to the composition of the resin used. It can take out from the metal mold | die after hardening and the molded article shown to FIG. 1D (a) can be obtained.

3. Third Step Next, as shown in FIG. 1D (b), the light emitting element 1020 is formed on the conductive member 1010 surrounded by the side wall 1030b of the base using an adhesive member (not shown) containing metal. The electrodes of the light emitting element and the conductive member 1010 are connected using the conductive wire 1050. Although the light emitting element having positive and negative electrodes on the same surface side is used here, a light emitting element having positive and negative electrodes formed on different surfaces can also be used.

  Next, the adhesive member is melted by heating at a temperature lower than the melting point of the metal layer, and the light emitting element 1020 and the conductive member 1010 are firmly bonded. Although heating temperature is based also on the material of a metal layer or an adhesive member, the range of about 200-380 degreeC is preferable, More preferably, it is 270-340 degreeC. For example, a solder eutectic material of Au: Sn = 80: 20 has a eutectic temperature in the range of 280 to 320 ° C., and is preferably heated at this range temperature. The heating step here is a step in which the highest temperature is applied after the heating step after the metal layer is formed in the first step. In this temperature range, the metal in Au and stainless steel (Fe, Ni, Cr, etc.) The diffusion coefficient is large, and in particular, an environment in which Fe, Ni, Cr, etc. easily diffuses in Au. And even if it is a case where it is higher than the heating temperature of the adhesive member made of resin alone and is heated at such a high temperature, the support layer made of stainless steel and the first layer (Au) in the lowermost layer of the conductive member However, it can suppress that an alloying layer is formed by the metal layer provided between them.

4). Fourth Step In the fourth step, as shown in FIG. 1C (c), a sealing member 1060 made of a translucent resin is transferred, potted, and printed in a recess formed by being surrounded by the side wall 1030b of the substrate. It is formed by the method. In the case of a substrate having a recess, it is preferable to fill the recess with a translucent resin using potting. In this manner, the light emitting element 1020 and the conductive wire 1050 are covered with the sealing portion 1060 material. Here, the sealing member 1060 is provided so as to have substantially the same height as the side wall 1030b. However, the sealing member 1060 is not limited thereto, and may be formed to be lower or higher than the side wall 1030b. In addition, the upper surface may be a flat surface as described above, or may be formed in a curved shape in which the center is recessed or protruded. Further, the sealing member may have a single-layer structure or a multilayer structure of two or more layers having different compositions and characteristics.

5). Fifth Step In the fifth step, after the sealing member 1060 is cured, the support substrate 1070 is peeled off as shown in FIG. 1D (c). At this time, the metal layer 1080 and the first layer of the conductive member 1010 are peeled off. Are removed by peeling at a position where they are separated from each other. That is, the metal layer 1080 is removed as it is formed on the surface of the support substrate 1070.

  Through the above steps, the aggregate 1000 can be obtained in the light emitting device as shown in FIG. 1D (d). Finally, the broken line portion shown in FIG. 1D (d), that is, the base 1030 and the conductive member 1010 are cut into individual pieces at a position where the side wall 1030b of the base is cut, and the light emitting device as shown in FIG. 1A 100 can be obtained. Various methods such as dicing with a blade and dicing with a laser beam can be used as the method of dividing into pieces.

  Here, the light extraction direction can be limited to only the upward direction of the light emitting device 100 by cutting the side wall 1030b and cutting at a position where the sealing member 1060 is not cut. Thereby, the extraction of light in the upward direction is efficiently performed. In addition, in FIG. 1D (d), although it cut | disconnected in the position containing a conductive member, you may cut | disconnect not only in this but in the position spaced apart from a conductive member. If the conductive member is cut at a position including the conductive member, the conductive member is exposed also on the side surface of the light emitting device, and solder or the like is easily joined. In addition, when cutting at a position away from the conductive member, since only the resin such as the base and the sealing member is cut, it is easier to cut compared to cutting the conductive member and the resin together. Can do.

  Hereinafter, each member of the light emitting device of the present invention will be described in detail.

(Substrate)
In this embodiment mode, the base is a resin having a concave portion including a bottom surface portion and a side wall provided between a pair of conductive members, and light from the light emitting element is added by adding various light-shielding fillers. Is made of a resin capable of shielding light. By providing such a light-shielding substrate, light from the light emitting element can be prevented from leaking to the outside from the lower surface (back surface) side of the light emitting device, and the light extraction efficiency in the upper surface direction is improved. Can be made. In addition, the base | substrate which does not have a side wall, ie, a base | substrate only of a bottom face part, may be sufficient. The thickness of the bottom surface and the side wall of the substrate may be any thickness that can suppress light leakage from the light emitting element.

  The substrate may be any member that can block light from the light emitting element, and preferably has a small difference in linear expansion coefficient from the support substrate. Furthermore, it is preferable to use an insulating member. As a preferable material, a resin such as a thermosetting resin or a thermoplastic resin can be used. In particular, when the conductive member has a very thin thickness of about 25 μm to 200 μm, a thermosetting resin is preferable, and an extremely thin substrate can be obtained. Specifically, epoxy resin composition, silicone resin composition, modified epoxy resin composition such as silicone modified epoxy resin, modified silicone resin composition such as epoxy modified silicone resin, polyimide resin composition, modified polyimide resin composition, etc. I can give you.

  In particular, a thermosetting resin is preferable, and a resin described in JP-A-2006-156704 is preferable. For example, among thermosetting resins, epoxy resins, modified epoxy resins, silicone resins, modified silicone resins, acrylate resins, urethane resins and the like are preferable. Specifically, (i) an epoxy resin composed of triglycidyl isocyanurate and hydrogenated bisphenol A diglycidyl ether, and (ii) hexahydrophthalic anhydride, 3-methylhexahydrophthalic anhydride, 4-methylhexahydrophthalic anhydride It is preferable to use a solid epoxy resin composition containing a colorless and transparent mixture obtained by dissolving and mixing an acid anhydride composed of an acid with an epoxy resin so as to have an equivalent amount. Furthermore, with respect to 100 parts by weight of these mixtures, 0.5 parts by weight of DBU (1,8-Diazabicyclo (5,4,0) undecene-7) as a curing accelerator, 1 part by weight of ethylene glycol as a co-catalyst, oxidation A solid epoxy resin composition in which 10 parts by weight of a titanium pigment and 50 parts by weight of glass fiber are added and partially cured by heating to form a B stage is preferable.

  Moreover, the thermosetting epoxy resin composition which has the epoxy resin containing a triazine derivative epoxy resin as an essential component as described in international publication number WO2007 / 015426 is preferable. For example, it is preferable to include a 1,3,5-triazine nucleus derivative epoxy resin. In particular, an epoxy resin having an isocyanurate ring is excellent in light resistance and electrical insulation. It is desirable to have a divalent, more preferably a trivalent epoxy group for one isocyanurate ring. Specifically, tris (2,3-epoxypropyl) isocyanurate, tris (α-methylglycidyl) isocyanurate, or the like can be used. The softening point of the triazine derivative epoxy resin is preferably 90 to 125 ° C. These triazine derivative epoxy resins may be used in combination with a hydrogenated epoxy resin or other epoxy resins. Furthermore, in the case of a silicone resin composition, a silicone resin containing a methyl silicone resin is preferable.

  In particular, the case where a triazine derivative epoxy resin is used will be specifically described. It is preferable to use an acid anhydride that acts as a curing agent for the triazine derivative epoxy resin. In particular, light resistance is improved by using an acid anhydride that is non-aromatic and does not have a carbon-carbon double bond. Can be made. Specific examples include hexahydrophthalic anhydride, methylhexahydrophthalic anhydride, trialkyltetrahydrophthalic anhydride, hydrogenated methylnadic acid anhydride, and the like, and methylhexahydrophthalic anhydride is particularly preferable. Moreover, it is preferable to use antioxidant, for example, phenol type and sulfur type antioxidant can be used.

These resins can be mixed with a filler for imparting light-shielding properties and various additives as required. In the present invention, these are referred to as light-shielding resins constituting the substrate. For example, light can be transmitted by mixing fine particles such as TiO ₂ , SiO ₂ , Al ₂ O ₃ , MgO, MgCO ₃ , CaCO ₃ , Mg (OH) ₂ , and Ca (OH) ₂ as a filler (filler). It is preferable to adjust the rate so that about 60% or more of the light from the light emitting element is shielded, more preferably about 90%. Here, either the light may be reflected or absorbed by the substrate, but when the light-emitting device is used for illumination or the like, it is more preferable to shield the light by reflecting it. Therefore, it is preferable that the reflectance with respect to the light from the light emitting element is 60% or more, more preferably 90% or more.

  The various fillers as described above can be used alone or in combination of two or more. For example, the filler for adjusting the reflectance and the linear expansion coefficient as described later can be used. It can be used in combination with fillers.

For example, when TiO ₂ is used as a white filler, it is preferably added in an amount of 10 to 30 wt%, more preferably 15 to 25 wt%. TiO ₂ may be either a rutile type or an anatase type. The rutile type is preferable from the viewpoint of light shielding properties and light resistance. Furthermore, when it is desired to improve dispersibility and light resistance, a filler modified by surface treatment can also be used. For the surface treatment of the filler made of TiO _2, hydrated oxides such as alumina, silica, and zinc oxide, and oxides can be used. In addition to these, it is preferable to use SiO ₂ in the range of 60 to 80 wt%, and more preferably 65 to 75 wt% as a filler mainly for adjusting the linear expansion coefficient. As the SiO _2, less amorphous silica coefficient of linear expansion than the crystalline silica is preferable. Further, a filler having a particle size of 100 μm or less, and further a filler of 60 μm or less is preferable. Furthermore, a spherical filler is preferable, which can improve the filling property when molding the substrate. In the case of use in a display or the like, in order to improve the contrast, it is preferable that the light absorption rate from the light emitting element is 60% or more, more preferably 90% or more. In such cases, as the filler, carbon such as acetylene black, activated carbon, graphite, transition metal oxides such as iron oxide, manganese dioxide, cobalt oxide, molybdenum oxide, or colored organic pigments are used depending on the purpose. I can do it.

Further, it is preferable to control the linear expansion coefficient of the substrate so that the difference from the linear expansion coefficient of the support substrate to be removed (peeled) before being separated into pieces is reduced. The difference is preferably 30% or less, more preferably 10% or less. When a SUS plate is used as the support substrate, the difference in coefficient of linear expansion is preferably 20 ppm or less, and more preferably 10 ppm or less. In this case, it is preferable to add 70 wt% or more, preferably 85 wt% or more of the filler. Thereby, since the residual stress between the support substrate and the base can be controlled (relaxed), the warpage of the assembly of the light emitting devices before being separated into pieces can be reduced. By reducing the warpage, internal damage such as cutting of the conductive wire can be reduced, and the positional deviation at the time of singulation can be suppressed, and manufacturing can be performed with high yield. For example, it is preferable to adjust the linear expansion coefficient of the substrates 5~25 × ^{10 -6} / K, more preferably it is desirable to adjust the 7~15 × ^{10 -6} / K. Thereby, it is possible to easily suppress the warpage that occurs during cooling after the base is molded, and it is possible to manufacture with high yield. In addition, in this specification, a linear expansion coefficient refers to the linear expansion coefficient below the glass transition temperature of the base | substrate which consists of light-shielding resin adjusted with various fillers. It is preferable that the linear expansion coefficient in this temperature region is close to the linear expansion coefficient of the support substrate.

  From another point of view, it is preferable to control the linear expansion coefficient of the base so that the difference between the linear expansion coefficients of the first and second conductive members is small. The difference is preferably 40% or less, more preferably 20% or less. Thereby, in the light emitting device after separation, the first and second conductive members and the base are prevented from being peeled off, and the light emitting device having excellent reliability can be obtained.

(Conductive member)
The conductive member functions as a pair of electrodes that are electrically connected directly or indirectly to the light emitting element and energizes electricity supplied from the outside. At least one conductive member is mounted on the light emitting element. The other has a size that can be connected to a conductive wire. The first layer (Au) is exposed on the lower surface of the conductive member so as to constitute the outer surface of the light emitting device. This allows the electrode to function as an electrode having excellent adhesion to the circuit board, and makes it electrically conductive. be able to.

  The side surface of the conductive member may be a flat surface, but it is preferable to have a protrusion as shown in FIG. 1B in consideration of adhesion to the substrate. This protrusion is preferably provided at a position separated from the lower surface of the conductive member 101, thereby preventing problems such as the conductive member 101 falling off the base 103. Such a protrusion can be provided at an arbitrary position around the conductive member, and can be provided partially, for example, only on two opposing side surfaces of the conductive member having a quadrangular view in top view. In order to prevent dropping more reliably, it is preferable to form the entire periphery of the conductive member.

  The film thickness of the conductive member is preferably about 10 μm to 100 μm, and particularly preferably about 45 μm to 95 μm. Such a thin conductive member can be obtained by plating on a support substrate as described later. By setting it as the thickness of the said range, it can be set as the electrically-conductive member of a comparatively uniform film thickness.

  In the present application, the conductive member has a first layer containing Au as a main component and a second layer containing a metal different from Au as a main component thereon.

  The first layer composed mainly of Au of the conductive member is exposed on the back surface of the light emitting device after removing the support substrate and the metal layer, and is excellent in the wettability of the solder used for mounting on the circuit board. It is a member. Therefore, by setting the main component as Au, preferably Au as the first layer, no further plating process is required. The thickness of the first layer is preferably about 0.04 μm to 1 μm, more preferably about 0.1 to 0.5 μm.

  The second layer of the conductive member is a layer containing a metal different from Au as a main component, and copper, nickel, iron, palladium, or the like can be suitably used depending on the purpose and application. For example, in order to improve the mechanical strength of the conductive member and the light emitting device, it is preferable to use Ni having high corrosion resistance as a main component, and in order to improve heat dissipation, copper having high thermal conductivity is used. Various selections can be made according to the purpose and application. These can be used alone, but in consideration of mechanical strength, bondability, mass productivity, cost, etc., alloys with other metals, or between the first layer and the second layer, or the second layer. They may be laminated on the layer. Examples of such materials include metals such as aluminum, gold, silver, tungsten, molybdenum, and cobalt, or alloys thereof (iron-nickel alloy, etc.), phosphor bronze, iron-containing copper, solder eutectic materials such as AuSn, SnAgCu, Examples thereof include solder such as SnAgCuIn and ITO. Among the solder materials, it is preferable that the solder particles are once melted and solidified so that the metal and the solder to be joined are alloyed and the melting point is increased, and the composition is adjusted so as not to be re-dissolved during additional heat treatment such as reflow mounting. The film thickness of the second layer is preferably about 0.04 μm to 200 μm, more preferably about 40 to 80 μm.

  In addition, it is preferable to provide a material capable of reflecting light from the light emitting element or the wavelength conversion member on the outermost surface (uppermost surface) of the conductive member. Specifically, gold, silver, copper, Pt, Pd, Al, W, Mo, Ru, Rh and the like are preferable. Furthermore, it is preferable that the outermost conductive member has high reflectivity and high gloss. Specifically, the reflectance in the visible region is preferably 70% or more. In this case, Au, Al, Ag, Ru, Rh, Pt, Pd and the like are preferable, and Ag is particularly preferable. Further, it is preferable that the surface gloss of the conductive member is high. Specifically, the glossiness is preferably 0.5 or more, more preferably 1.0 or more. The glossiness shown here is a number obtained by 45 ° irradiation and vertical light reception using a Nippon Denshoku Industries micro surface color difference meter VSR 300A. Further, eutectic solder plating such as Au, Sn, Sn alloy, AuSn and the like, which are advantageous for mounting on a circuit board or the like, is preferable on the support substrate side.

  The conductive member as described above is preferably a plating (plating layer) formed by a plating method, and particularly preferably a laminated plating (layer).

Moreover, the thing with a comparatively near linear expansion coefficient with a support substrate is preferable. For example, SUS430 having a linear expansion coefficient of 10.4 × 10 ⁻⁶ / K is used as the support substrate, and a conductive member is formed thereon, and the first layer has a linear expansion coefficient of 14.2 × 10 ⁻⁶ / K. A certain Au (0.04 to 0.1 μm), and Ni (or linear expansion coefficient 16.8 × 10 ⁻⁶ / K) as the second layer on top of it is 12.8 × 10 ⁻⁶ / K Cu) (40 to 70 μm) / Au (0.01 to 0.07 μm), and a laminated structure such as Ag (2 to ⁶ μm) having a linear expansion coefficient of 119.7 × 10 ⁻⁶ / K as the outermost surface layer is preferable. . The top layer of Ag has a linear expansion coefficient that is significantly different from that of other layers of metal, but it is because priority is given to the reflectance of light from the light emitting element, and the influence on the warp is extremely weak because of its extremely thin thickness. There is no practical problem.

(Sealing member)
The sealing member is a member that protects electronic components such as a light emitting element, a light receiving element, a protective element, and a conductive wire from dust, moisture, and external force. In the present embodiment, FIG. As shown in FIG. 1B, the concave portion S of the base 103 is filled.

  As a material for the sealing member, a material having a light-transmitting property capable of transmitting light from the light-emitting element and having light resistance that is not easily deteriorated by them is preferable. Specific examples of the material include a silicone resin composition, a modified silicone resin composition, an epoxy resin composition, a modified epoxy resin composition, and an acrylic resin composition. A composition can be mentioned. Furthermore, a silicone resin, an epoxy resin, a urea resin, a fluororesin, and a hybrid resin containing at least one of these resins can also be used. Furthermore, it is not limited to these organic materials, and inorganic materials such as glass and silica sol can also be used. In addition to such materials, a colorant, a light diffusing agent, a light reflecting material, various fillers, a wavelength conversion member (fluorescent member), and the like can be included as desired. The filling amount of the sealing member may be an amount that covers the electronic component.

  The shape of the outer surface of the sealing tree member can be variously selected according to the light distribution characteristics. For example, the directivity can be adjusted by making the upper surface into a convex lens shape, a concave lens shape, a Fresnel lens shape, or the like. In addition to the sealing member, a lens member may be provided. Furthermore, when using a molded article containing a fluorescent member, for example, a plate-like molded article containing a fluorescent member, a dome-shaped molded article, etc., it is preferable to select a material having excellent adhesion as the sealing member. In addition to the resin composition, the fluorescent member-containing molded body may be made of an inorganic material such as glass.

  Although the light emitting device has been mainly described above, the light receiving device is substantially the same as described above. As a sealing member to be used, the purpose is to increase the light incident efficiency or avoid secondary reflection inside the light receiving device. A colored filler such as white or black may be used. In particular, in order to avoid the influence of visible light, it is preferable to use a black colored filler-containing sealing member for an infrared light emitting device or an infrared detection device.

  Further, instead of the base made of the above light-shielding resin, the conductive member and each electronic component placed thereon may be integrally held with the resin used as the sealing member.

(Adhesive member)
The adhesive member is a member containing a metal, and is a member that can be melted by heating at a temperature lower than the melting point of the metal layer to bond the light emitting element and the conductive member. Such an adhesive member needs to be heated at a higher temperature than an adhesive member made only of resin, but is a member excellent in heat resistance, and due to high-temperature heat generation accompanying the increase in output of the light emitting element. Are less likely to deteriorate and adhesion is less likely to decrease. As a preferable material for the adhesive member, a conductive paste such as silver, gold or palladium, a solder eutectic material such as AuSn, or a brazing material such as a low melting point metal can be used. In particular, Au: Sn = 10: 90, A eutectic material of Au: Sn = 80: 20 is preferred. In particular, a solder eutectic material of Au: Sn = 80: 20 has a eutectic temperature in the range of 280 to 320 ° C., and has high fluidity and wettability, so that the light-emitting element is firmly bonded. be able to.

(Conductive wire)
Examples of the conductive wire that directly or indirectly connects the electrode of the light emitting element and the conductive member include conductive wires using metals such as gold, copper, platinum, and aluminum, and alloys thereof. In particular, it is preferable to use gold excellent in thermal resistance.

(Wavelength conversion member)
In the sealing member, a fluorescent member that emits light having a different wavelength by absorbing at least a part of light from the light emitting element may be contained as a wavelength conversion member.

  As the fluorescent member, it is more efficient to convert the light from the light emitting element into a longer wavelength. However, the present invention is not limited to this, and various fluorescent members such as one that converts light from the light emitting element into a short wavelength or one that further converts light converted by another fluorescent member can be used. Such a wavelength conversion member may form one type of fluorescent member as a single layer, may form a single layer in which two or more types of fluorescent members are mixed, or one type of fluorescent member. Two or more monolayers may be laminated, or two or more monolayers in which two or more kinds of fluorescent members are mixed may be laminated.

As the fluorescent member, for example, when a semiconductor light-emitting element having a nitride-based semiconductor as a light-emitting layer is used as the light-emitting element, any member that absorbs light from the light-emitting element and converts it into light of a different wavelength may be used. For example, a nitride-based phosphor / oxynitride-based phosphor mainly activated by a lanthanoid element such as Eu or Ce, more specifically, (a) an Eu-activated α- or β-sialon-type phosphor, Various alkaline earth metal nitride silicates, various alkaline earth metal aluminum nitride silicon (eg, CaSiAlN ₃ : Eu, SrAlSi ₄ N ₇ : Eu, etc.), (b) lanthanoid elements such as Eu, transition metal systems such as Mn Alkaline earth metal halogenapatite, alkaline earth metal halosilicate, alkaline earth metal silicate, alkaline earth metal borate, alkaline earth metal aluminate, alkaline earth metal sulfide , Alkaline earth metal thiogallate, alkaline earth metal silicon nitride, germanate, or (c) lanthanum such as Ce Selected from organic and organic complexes mainly activated by lanthanoid elements such as rare earth aluminates, rare earth silicates, alkaline earth metal rare earth silicates (d) Eu, which are mainly activated by id elements It is preferable that it is at least any one or more. Preferably, Y ₃ Al ₅ O ₁₂ : Ce, (Y _0.8 Gd _0.2 ) ₃ Al ₅ O ₁₂ : Ce, which is a rare earth aluminate phosphor mainly activated by a lanthanoid element such as Ce. Y ₃ (Al _0.8 Ga _0.2 ) ₅ O ₁₂ : Ce, (Y, Gd) ₃ (Al, Ga) ₅ O ₁₂ is a YAG phosphor represented by a composition formula. Further, there are Tb ₃ Al ₅ O ₁₂ : Ce, Lu ₃ Al ₅ O ₁₂ : Ce, etc. in which a part or all of Y is substituted with Tb, Lu, or the like. Furthermore, fluorescent members other than the above-described fluorescent members, which have similar performance, action, and effect, can be used.

Moreover, what apply | coated the fluorescent member to other molded objects, such as glass and a resin composition, can also be used. Furthermore, a molded body containing a fluorescent member can also be used. Specifically, fluorescent member-containing glass, YAG sintered body, sintered body such as YAG and Al ₂ O ₃ , SiO ₂ , B ₂ O ₃ , crystallized inorganic bulk in which YAG is precipitated in an inorganic melt A body or the like, or a fluorescent member integrally formed with epoxy, silicone, hybrid resin, or the like can be used.

(Light emitting element)
In the present invention, the light emitting element has various structures such as a structure in which positive and negative electrodes are formed on the same surface side, a structure in which positive and negative electrodes are formed on different surfaces, and a structure in which a substrate different from the growth substrate is bonded. A semiconductor element can be used.

A semiconductor light emitting device having an arbitrary wavelength can be selected. For example, the blue, the green light emitting element, ZnSe and nitride semiconductor _{(In X Al Y Ga 1-} X-Y N, 0 ≦ X, 0 ≦ Y, X + Y ≦ 1), used after using GaP be able to. As the red light emitting element, GaAlAs, AlInGaP, or the like can be used. Furthermore, a semiconductor light emitting element made of a material other than this can also be used. The composition, emission color, size, number, and the like of the light emitting element to be used can be appropriately selected according to the purpose.

In the case of a light emitting device having a wavelength conversion member, a nitride semiconductor capable of emitting a short wavelength that can efficiently excite the wavelength conversion member (In _X Al _Y Ga _1- XYN, 0 ≦ X, 0 ≦ Y, X + Y ≦ 1) is preferred. Various emission wavelengths can be selected depending on the material of the semiconductor layer and the degree of mixed crystal.

  Further, a light-emitting element that outputs not only light in the visible light region but also ultraviolet rays and infrared rays can be obtained. Furthermore, a light receiving element or the like can be mounted together with or independently of the light emitting element, and a protective element or the like can also be mounted. In addition, the conductive member may be indirectly mounted via another member such as a pedestal member in addition to being directly bonded onto the conductive member via the adhesive member.

(Support substrate)
The support substrate is a plate-like or sheet-like member used for forming the conductive member, and is a member that is not included in the light-emitting device because it is removed before being separated into individual pieces.

The support substrate is made of stainless steel (SUS), and various types of stainless steel such as altensite, ferrite, and austenite can be used. Preferably, a stainless ferritic, particularly preferably 400 system, are of 300 system, ^{further, SUS430 (10.4 × 10 -6 /K),SUS444(10.6×10} -6 / K ^{), SUS303 (18.7 × 10 -6} /K),SUS304(17.3×10 -6 / K) and the like are preferably used. When the 400 series stainless steel is subjected to an acid treatment as a pretreatment for plating, the surface becomes more rough than the 300 series stainless steel. Accordingly, when a plating layer is formed on 400 series stainless steel that has been subjected to acid treatment, the surface of the plating layer is also likely to be rough. Thereby, adhesiveness with resin which comprises a sealing member and a base | substrate can be improved. In addition, the surface of 300 series is hardly roughened by acid treatment. For this reason, if 300 series stainless steel is used, it is easy to improve the glossiness of the surface of the plating layer, whereby the reflectance from the light emitting element is improved and a light emitting device with high light extraction efficiency can be obtained.

  The thickness of the support substrate is preferably a plate-shaped member having a thickness of about 10 μm to 300 μm, and the support substrate may be slit, grooved, or corrugated to reduce warpage after resin molding.

(Metal layer)
A metal layer is provided on the support substrate which consists of stainless steel, and contains the metal whose diffusion coefficient with Au is smaller than the metal in a support substrate. This functions as a barrier layer that suppresses diffusion of Fe, Ni, Cr, and the like contained in the support substrate to the first layer of the conductive member due to heating when the light emitting element is bonded to the conductive member.
Accordingly, since alloying between the support substrate and the conductive member can be suppressed, the support substrate can be easily removed in a later process, and a light-emitting device can be obtained with high yield.

  Preferred materials for such a metal layer include Ti, Pt, Pd, Al, Rh, Mo and the like. The thickness of the metal layer is preferably about 0.02 μm to 5 μm, more preferably about 0.02 μm to 1 μm. Similar to the conductive member, the metal layer can be formed by plating, or by a method such as sputtering or vapor deposition.

<Embodiment 2>
2A to 2C show a light emitting device 200 and a manufacturing method thereof according to the present embodiment. FIG. 2C shows a cross-sectional view of the light emitting device 200 and a partially enlarged view thereof.

  In this embodiment mode, the light-emitting device 200 has substantially the same appearance as the light-emitting device illustrated in FIG. 1A, and has a pair of conductive members 201 having a light-emitting element 202 and an upper surface that is electrically connected to the light-emitting element 202. And a base 203 held in contact with the outer edge of the conductive member 201. The base 203 has a recess composed of a bottom surface portion 203a and a side wall 203b, and a part of the upper surface of the pair of conductive members 201 is exposed at the bottom surface of the recess. The lower surface of the conductive member 201 is exposed from the lower surface (back surface) of the base body 203. The light emitting element 202 and the conductive member 101 are electrically connected via a conductive wire 205, and a sealing member 206 is provided in the recess so as to cover these electronic components. The second embodiment is characterized in that the lower surface of the base 203 protrudes below the lower surface of the conductive member 201. As a result, it is possible to make it difficult for a short circuit to occur during mounting on a mounting board such as a printed board.

  Such a light emitting device 200 can be obtained by the following manufacturing method. 2A and 2B are diagrams for explaining a process of forming the light emitting device assembly 2000. By cutting the assembly 2000 into pieces, the light emitting device 200 shown in FIG. 2C can be obtained. it can. In the manufacturing method of the second embodiment, the formation order of the metal layer and the protective film provided on the support substrate is reversed from that of the first embodiment, that is, the metal layer is formed after the protective film is first formed. Different from the first embodiment. Hereinafter, differences from Embodiment 1 will be mainly described, and other methods can be omitted as appropriate because the same methods as Embodiment 1 can be used.

1. First Step First, as shown in FIG. 2A (a), a flat support substrate 2070 made of stainless steel is prepared. A resist 2090 is applied as a protective film on the surface of the support substrate. After the applied resist 2070 is dried, a mask 2100 having an opening is directly or indirectly disposed on the resist 2070, and exposure is performed by irradiating ultraviolet rays as indicated by arrows in the drawing. Thereafter, a protective film 2090 having an opening K is formed as shown in FIG.

  Next, a metal layer 2080 containing a metal whose diffusion coefficient with Au is smaller than that of the metal in the support substrate is formed on the support substrate exposed in the opening K of the protective film 2090. Thereafter, similarly to Embodiment 1, it is preferable to heat at a temperature higher than the heating temperature in the third step.

  Next, a first layer containing gold (Au) as a main component and a second layer containing a metal different from Au as a main component are formed on the metal layer 2080 by plating. As shown in (c), the metal layer 2080 and the conductive member 2010 thereon are formed in the opening K of the protective film 2090. Thus, the point that the metal layer 2080 is formed in the same shape as the conductive member 2010 is different from the first embodiment. Here, the metal layer 2080 is preferably formed extremely thin as compared with the conductive member 2010. That is, since the metal layer 2080 is removed together with the support substrate in the final step, if it is formed thick, it is difficult to peel off, and the difference in height between the back surface of the conductive member and the back surface of the base member becomes large. Therefore, it is preferable to form a thin film, for example, about 0.02 μm to 3 μm, and more preferably about 0.02 μm to 1 μm.

  After plating, the protective film 2090 is washed away to form a plurality of metal layers 2080 and conductive members 2010 that are spaced apart from each other as shown in FIG. 2A (d).

2. Second Step Next, as shown in FIG. 2B (a), a base body 2030 made of a light shielding resin capable of reflecting light from the light emitting element and having a bottom surface portion 2030a and side walls 2030b is formed.

3. Third Step Next, as shown in FIG. 2B (b), the light emitting element 2020 is formed on the conductive member 2010 surrounded by the side wall 2030b of the base using an adhesive member (not shown) containing metal. The electrodes of the light emitting element and the conductive member 2010 are connected using the conductive wire 2050.

  Next, the adhesive member is melted by heating at a temperature lower than the melting point of the metal layer, and the light emitting element 2020 and the conductive member 2010 are firmly bonded.

4). Fourth Step In the fourth step, as shown in FIG. 2B (c), a sealing member 2060 made of a translucent resin is formed in a recess formed by being surrounded by the side wall 2030b of the substrate.

5). Fifth Step In the fifth step, after the sealing member 2060 is cured, the support substrate 2070 is peeled off as shown in FIG. 2B (c). At this time, the metal layer 2080 and the first layer of the conductive member 2010 are peeled off. Are removed by peeling at a position where they are separated from each other. Here, since the plurality of metal layers 2080 are formed so as to be separated from each other in the same manner as the conductive member 2060 instead of the entire upper surface of the support substrate 2070, the metal layers 2080 are separated from the upper surface of the support substrate 2070 after peeling. The metal layer 2080 is peeled off so as to remain.

  Through the above steps, the assembly 2000 can be obtained in the light emitting device as shown in FIG. 2B (d). Finally, the broken line portion shown in FIG. 2B (d), that is, the base 2030 and the conductive member 2010 are cut into pieces at a position where the side wall 2030b of the base is cut, and the base as shown in FIG. 2C. The light emitting device 200 in which the lower surface of the (bottom surface portion) 203 protrudes from the lower surface of the conductive member 201 can be obtained. 2C shows an example in which the lower surface of the bottom surface portion 203a of the base body protrudes from the lower surface of the conductive member 201, but the lower surface of the side wall 203b of the base body also protrudes from the lower surface of the conductive member 201. This is preferable because it can be mounted in a balanced manner.

  The light-emitting device according to the present invention is small and lightweight, has excellent heat resistance, and can obtain a light-emitting device with light extraction efficiency. Various display devices, lighting fixtures, displays, backlight light sources for liquid crystal displays, etc. Can also be used.

100, 200: Light emitting devices 101, 201: Conductive members 102, 202: Light emitting elements 103, 203 ... Base body 103a, 203a ... Bottom surface of base body 103b, 203b ... Side wall of base body S: concave portion 104 of substrate 104 ... protective element 105, 205 ... conductive wire 106, 206 ... sealing member 1000, 2000 ... aggregate of light emitting elements 1010, 2010 ... conductive member 1020, 2020 ... Light emitting elements 1030, 2030 ... Base 1030a, 2030a ... Bottom of base 1030b, 2030b ... Side walls 1050, 2050 ... Conductive wires 1060, 2060 ... Sealed Stop member 1070, 2070 ... Support substrate 1080, 2080 ... Metal layer 1090, 2090 ... Protective film (resist)
1100, 2100 ... Mask

Claims (6)

After forming a protective film having a plurality of openings on a support substrate made of stainless steel, a metal layer containing a metal having a diffusion coefficient with Au smaller than that of the metal in the support substrate is formed in the openings. A first step of forming a plurality of conductive members having a first layer containing Au as a main component and a second layer stacked on the first layer and containing a metal different from Au as a main component;
A second step of providing a base made of a light-shielding resin on the support substrate exposed between the plurality of conductive members after removing the protective film ;
A third step of placing the light emitting element on the upper surface of the conductive member or the base via an adhesive member containing a metal and heating the adhesive member at a temperature lower than the melting point of the metal layer. When,
A fourth step of covering the light emitting element with a translucent sealing member;
The support substrate is removed by peeling between the metal layer and the first layer, and the lower surface of the base is protruded below the lower surface of the conductive member by removing the light. A fifth step of dividing the device into pieces;
A method for manufacturing a light-emitting device, comprising:
The method for manufacturing a light emitting device according to claim 1, wherein the first step includes a step of heating at a temperature higher than a heating temperature of the third step.
The light emitting device manufacturing method according to claim 1, wherein the metal layer includes any one of Ti, Pt, Pd, Al, Rh, and Mo.
The method for manufacturing a light emitting device according to any one of claims 1 to 3, wherein the adhesive member is a eutectic material.
5. The method for manufacturing a light emitting device according to claim 1, wherein in the second step, a bottom surface provided between conductive members and a side wall are provided as a base.
The light-emitting device obtained by the manufacturing method of the light-emitting device of any one of the said Claim 1 thru | or 5 .

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