JP2005116937A - Semiconductor light emitting device and manufacturing method thereof - Google Patents

Semiconductor light emitting device and manufacturing method thereof Download PDF

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JP2005116937A
JP2005116937A JP2003352018A JP2003352018A JP2005116937A JP 2005116937 A JP2005116937 A JP 2005116937A JP 2003352018 A JP2003352018 A JP 2003352018A JP 2003352018 A JP2003352018 A JP 2003352018A JP 2005116937 A JP2005116937 A JP 2005116937A
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semiconductor light
light emitting
emitting device
frame
recess
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Takaaki Asaka
高明 浅香
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device that increases a heat radiation effect and prevents a resin package from being cracked, and to provide a method for manufacturing the semiconductor light emitting device. <P>SOLUTION: The light emitting device comprises a resin package having a reflection wall at an inner periphery in a recess; a pair of lead frames in which one edge is exposed on the bottom surface of the recess, and the other projects from the outer surface of the resin package; and a semiconductor light-emitting element mounted at one edge of the lead frame in the recess. In the light emitting device, when a plurality of lead frames are arranged so as to be overlapped, heat generated in the semiconductor light-emitting element is transferred to the upper and lower lead frames in succession. A plurality of the lead frames are arranged so as to be overlapped, thus transferring heat in the thickness direction. Additionally, each lead frame is made of a different member, thus reducing the amount of deformation when the lead frame is overlapped for being bent as compared with deformation when the lead frame having the thickness of two lead frames is bent. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、樹脂パッケージとリードフレームを一体成型したパッケージ半導体発光装置およびその製造方法に関する。   The present invention relates to a package semiconductor light emitting device in which a resin package and a lead frame are integrally molded, and a method for manufacturing the same.

従来、半導体発光装置は、光取り出し用の凹部が形成された樹脂パッケージと対となるリードフレームとを一体成型し、リードフレーム上に半導体発光素子を搭載した構造のものが多く用いられている。   2. Description of the Related Art Conventionally, many semiconductor light emitting devices have a structure in which a resin package having a light extraction recess formed therein and a paired lead frame are integrally molded, and a semiconductor light emitting element is mounted on the lead frame.

このような半導体発光装置の駆動電流を増加させて高輝度化を実現しようとするとき、温度上昇による輝度特性の低下や、樹脂パッケージの変形等の不具合を防止するため、半導体発光素子からの放熱特性を向上させる必要がある。   When increasing the drive current of such a semiconductor light emitting device to achieve high brightness, heat dissipation from the semiconductor light emitting element is prevented in order to prevent problems such as a decrease in luminance characteristics due to temperature rise and deformation of the resin package. It is necessary to improve the characteristics.

図４は、従来の半導体発光装置の平面図である。図４に示すように、従来の半導体発光装置７０は、対となるリードフレーム７１，７２の面積を広くして放熱面を拡大したものである。半導体発光素子７３の熱は、リードフレーム７１，７２に伝達され、リードフレーム７１，７２から樹脂パッケージ７４の外部に伝導する。このリードフレーム７１，７２の外側端部は、屈曲されて電極端子となる。   FIG. 4 is a plan view of a conventional semiconductor light emitting device. As shown in FIG. 4, the conventional semiconductor light emitting device 70 has a heat radiating surface enlarged by increasing the areas of the paired lead frames 71 and 72. The heat of the semiconductor light emitting element 73 is transmitted to the lead frames 71 and 72 and is conducted from the lead frames 71 and 72 to the outside of the resin package 74. The outer ends of the lead frames 71 and 72 are bent to form electrode terminals.

図５は、従来の他の半導体発光装置の断面図である。図５に示すように、従来の他の半導体発光装置７５は、リードフレーム７６，７７の厚みを厚くしたものである。半導体発光素子７８の熱は、リードフレーム７６，７７に伝達され、リードフレーム７６，７７から樹脂パッケージ７９の外部に伝導する。このリードフレーム７６，７７の外側端部は、屈曲されて電極端子となる。   FIG. 5 is a cross-sectional view of another conventional semiconductor light emitting device. As shown in FIG. 5, in another conventional semiconductor light emitting device 75, lead frames 76 and 77 are made thicker. The heat of the semiconductor light emitting element 78 is transmitted to the lead frames 76 and 77, and is conducted from the lead frames 76 and 77 to the outside of the resin package 79. The outer ends of the lead frames 76 and 77 are bent to serve as electrode terminals.

また、１枚の板材からなるリードフレームに電極端子とは別に、樹脂パッケージの外側に露出する放熱部を形成した発光装置も開発されている（例えば、特許文献１参照。）。
特開平１１−８７７８０号公報（第２−６頁、第２図） In addition, a light emitting device has been developed in which a heat radiating portion exposed to the outside of a resin package is formed on a lead frame made of a single plate material separately from the electrode terminals (see, for example, Patent Document 1).
Japanese Patent Laid-Open No. 11-87780 (page 2-6, FIG. 2)

しかしながら、図４に示す従来の半導体発光装置のように、リードフレームの面積を広くして放熱面を拡大すると、樹脂とリードフレームとの境界面も広くなるため、樹脂がリードフレームの界面から剥離しやすくなり、信頼性が低下するという問題がある。   However, as in the conventional semiconductor light emitting device shown in FIG. 4, when the area of the lead frame is increased and the heat dissipation surface is enlarged, the boundary surface between the resin and the lead frame also increases, so that the resin is peeled off from the interface of the lead frame. There is a problem that reliability is reduced.

また、図５に示す従来の他の半導体発光装置のように、リードフレームの厚みを厚く形成して、放熱部分の断面積を拡大すると、リードフレームの剛性が増加するので、リードフレームの突出部分を曲げて電極端子を形成するときに、リードフレームの基部から樹脂パッケージに伝達される応力が大きくなり、樹脂パッケージにクラックが発生するので、後加工が困難になるという問題がある。   Further, like the other conventional semiconductor light emitting device shown in FIG. 5, if the lead frame is formed thick and the cross-sectional area of the heat radiating portion is enlarged, the rigidity of the lead frame increases. When the electrode terminal is formed by bending the wire, the stress transmitted from the base portion of the lead frame to the resin package is increased, and a crack is generated in the resin package, which makes it difficult to perform post-processing.

また、特許文献１に示すような放熱部を形成しても、空気への放熱効果は低く、他の部材に接触させなければ放熱効果は得られないので、結局は面積を広く形成しないと放熱効果は向上しない。   Moreover, even if the heat radiation part as shown in Patent Document 1 is formed, the heat radiation effect to the air is low, and the heat radiation effect cannot be obtained unless it is brought into contact with other members. The effect is not improved.

そこで本発明は、放熱効果を向上させるとともに樹脂パッケージのクラックを防止する半導体発光装置およびその製造方法を提供することを目的とする。   Accordingly, an object of the present invention is to provide a semiconductor light emitting device that improves the heat dissipation effect and prevents cracks in the resin package, and a method for manufacturing the same.

本発明の半導体発光装置においては、リードフレームとして、異なる材質からなる接続用フレームと放熱用フレームとを、重ねて配置した半導体発光装置としたものである。   In the semiconductor light emitting device of the present invention, the lead frame is a semiconductor light emitting device in which a connection frame and a heat radiating frame made of different materials are arranged to overlap each other.

また、本発明の半導体発光装置の製造方法においては、リードフレームを無接合状態で重ね、上型および下型で挟持して成型している。   Further, in the method for manufacturing a semiconductor light emitting device of the present invention, the lead frames are stacked in a non-joined state and are sandwiched and molded between the upper mold and the lower mold.

この発明によれば、放熱効果を向上させるとともに樹脂パッケージのクラックを防止する半導体発光装置およびその製造方法が得られる。   According to the present invention, it is possible to obtain a semiconductor light emitting device that improves the heat dissipation effect and prevents cracks in the resin package and a method for manufacturing the same.

本発明によれば、樹脂パッケージと、一対のリードフレームと、半導体発光素子とを有する半導体発光装置において、リードフレームを複数枚重ねて配置したので、半導体発光素子で発生した熱が、上側のリードフレームに伝達されて、さらに下側のリードフレームに伝達されることになり、放熱効果が向上する。また、２枚重ねているので、２枚分の厚みを有するリードフレームを折り曲げたときの変形より小さくなり、樹脂パッケージにクラックが入ることを防止できる。   According to the present invention, in the semiconductor light emitting device having the resin package, the pair of lead frames, and the semiconductor light emitting element, the plurality of lead frames are arranged so that the heat generated in the semiconductor light emitting element is It is transmitted to the frame and further transmitted to the lower lead frame, and the heat dissipation effect is improved. Further, since the two sheets are stacked, the deformation is smaller than when the lead frame having a thickness of two sheets is bent, and cracks can be prevented from entering the resin package.

本願の請求項１に記載の発明は、凹部の内周に反射壁を有する樹脂パッケージと、一端部が前記凹部の底面に露出し、他端部が前記樹脂パッケージの外側面から突出した一対のリードフレームと、前記凹部内の前記リードフレームの一端部に搭載された半導体発光素子とを有する半導体発光装置において、前記リードフレームは、複数枚が重ねて配置されていることを特徴とする半導体発光装置としたものであり、半導体発光素子から発生した熱は、上側のリードフレームに伝達されて、さらに下側のリードフレームに伝達される。複数枚のリードフレームが重ねて配置されているので、熱が厚み方向に伝達され、また、各リードフレームが別部材なので、これを重ねて曲げたときの変形量が、２枚分の厚みを有するリードフレームを折り曲げたときの変形より小さくなるという作用を有する。   The invention according to claim 1 of the present application is a pair of a resin package having a reflection wall on the inner periphery of the recess, one end exposed at the bottom of the recess, and the other end protruding from the outer surface of the resin package. A semiconductor light emitting device comprising: a lead frame; and a semiconductor light emitting device mounted on one end of the lead frame in the recess. The semiconductor light emitting device, wherein a plurality of the lead frames are arranged to overlap each other. In the device, the heat generated from the semiconductor light emitting element is transmitted to the upper lead frame and further to the lower lead frame. Since multiple lead frames are placed one on top of the other, heat is transmitted in the thickness direction, and each lead frame is a separate member, so the amount of deformation when it is stacked and bent is the thickness of two sheets. It has an effect of being smaller than deformation when the lead frame is bent.

請求項２に記載の発明は、前記リードフレームは、材質が異なる接続用フレームおよび放熱用フレームからなることを特徴とする請求項１に記載の半導体発光装置としたものであり、半導体発光素子との接続の信頼性を向上させる材質で接続用フレームを形成し、放熱性に優れる材質で放熱用フレームを形成すると、半導体発光素子の熱は接続用フレームを介して放熱用フレームに伝達された後、迅速に拡散するとともに、接続用フレームと半導体発光素子との剥離が防止される。   The invention according to claim 2 is the semiconductor light emitting device according to claim 1, wherein the lead frame includes a connection frame and a heat dissipation frame made of different materials. If the connection frame is formed of a material that improves the reliability of the connection and the heat dissipation frame is formed of a material that has excellent heat dissipation, the heat of the semiconductor light emitting device is transferred to the heat dissipation frame through the connection frame. , It diffuses quickly, and the connection frame and the semiconductor light emitting element are prevented from peeling off.

請求項３に記載の発明は、前記接続用フレームの表面には銀めっきが施され、前記凹部内にある前記接続用フレームの一端部は、前記凹部内にある前記放熱用フレームの一端部より小さく形成され、前記凹部内には、光透過性を有する樹脂により封止されていることを特徴とする請求項２に記載の半導体発光装置としたものであり、接続用フレームに銀めっきを施すことにより、半導体発光素子との接続性をよくし、また、樹脂との密着性が悪い接続用フレームを小さくして、樹脂を放熱用フレームに密着させるという作用を有する。   According to a third aspect of the present invention, the surface of the connection frame is silver-plated, and one end of the connection frame in the recess is more than one end of the heat dissipation frame in the recess. 3. The semiconductor light-emitting device according to claim 2, wherein the semiconductor light-emitting device is formed in a small size and is sealed with a light-transmitting resin in the recess, and the connection frame is subjected to silver plating. As a result, the connectivity with the semiconductor light emitting element is improved, and the connection frame having poor adhesion to the resin is made smaller, so that the resin is brought into close contact with the heat dissipation frame.

請求項４に記載の発明は、前記放熱用フレームの他端部は、前記樹脂パッケージ内で複数に分岐して前記外側面からそれぞれ突出し、前記接続用フレームの他端部とは重ならない位置に配置されていることを特徴とする請求項２または３に記載の半導体発光装置としたものであり、樹脂パッケージの外側には、放熱用フレームの他端部と接続用フレームの他端部とがそれぞれ１枚ずつ突出するという作用を有する。また、樹脂パッケージの内部では、分岐した放熱用フレームの間に樹脂パッケージを形成する樹脂が充填され、リードフレームの上下の樹脂が接続される。   According to a fourth aspect of the present invention, the other end of the heat dissipating frame is branched into a plurality of portions within the resin package and protrudes from the outer surface, and does not overlap the other end of the connecting frame. 4. The semiconductor light-emitting device according to claim 2, wherein the other end of the heat dissipating frame and the other end of the connecting frame are provided outside the resin package. Each has the effect of protruding one by one. Further, inside the resin package, a resin forming the resin package is filled between the branched heat dissipation frames, and the upper and lower resins of the lead frame are connected.

請求項５に記載の発明は、前記放熱用フレームの他端部は、前記接続用フレームの他端部と同形状に折り曲げられていることを特徴とする請求項２から４のいずれかの項に記載の半導体発光装置としたものであり、使用時に、接続用フレームが接続される電極部に放熱用フレームも接続されるという作用を有する。   The invention according to claim 5 is characterized in that the other end of the heat dissipating frame is bent in the same shape as the other end of the connecting frame. The semiconductor light emitting device according to claim 1 has an effect that, when in use, the heat dissipating frame is also connected to the electrode portion to which the connecting frame is connected.

請求項６に記載の発明は、半導体発光素子が搭載される複数のリードフレームを成型金型に配置し、熱可塑性樹脂を用いて樹脂パッケージの成形を行う一体成型工程を有する半導体発光装置の製造方法において、複数の前記リードフレームは、無接合状態で重ねられ、前記成型金型の上型および下型で挟持されて成型されることを特徴とする半導体発光装置の製造方法としたものであり、成型時には、複数のリードフレームが密接した状態で熱可塑性樹脂が流入し、密接しているリードフレームの間の界面へ、流動性が悪い熱可塑性樹脂が浸入することがなく、重なっているリードフレームの周囲を覆って硬化するという作用を有する。   According to a sixth aspect of the present invention, there is provided a method of manufacturing a semiconductor light emitting device including an integral molding step in which a plurality of lead frames on which semiconductor light emitting elements are mounted are arranged in a molding die and a resin package is molded using a thermoplastic resin. In the method, a plurality of the lead frames are stacked in a non-bonded state, and are sandwiched and molded between an upper mold and a lower mold of the molding die. When molding, the thermoplastic resin flows in a state where a plurality of lead frames are in close contact, and the thermoplastic resin having poor fluidity does not enter the interface between the close lead frames, and the leads overlap. It has the effect of covering the periphery of the frame and curing.

以下、本発明の実施の形態について、図１、図２を用いて説明する。   Hereinafter, embodiments of the present invention will be described with reference to FIGS.

図１（Ａ）は本発明の一実施の形態の半導体発光装置の平面図、（Ｂ）は同半導体発光装置の断面図を示す。図１（Ａ）、（Ｂ）に示すように、一実施の形態の半導体発光装置１は、凹部２の内周に反射壁３を有する樹脂パッケージ４と、一端部が凹部２の円形の底面２７に露出し、他端部が樹脂パッケージ４の外側面から突出した一対のリードフレーム５，６と、凹部２内のリードフレーム５，６の一端部に搭載された半導体発光素子７とを有している。凹部２内の半導体発光素子７は、光透過性を有するエポキシ等からなる封止樹脂２８により封止されている。なお、リードフレーム５，６の一端部とは樹脂パッケージ４の中央側、他端部とは樹脂パッケージ４の両外側を示している。   1A is a plan view of a semiconductor light emitting device according to an embodiment of the present invention, and FIG. 1B is a cross-sectional view of the semiconductor light emitting device. As shown in FIGS. 1A and 1B, a semiconductor light emitting device 1 according to an embodiment includes a resin package 4 having a reflecting wall 3 on the inner periphery of a recess 2 and a circular bottom surface having a recess 2 at one end. 27, and a pair of lead frames 5 and 6 whose other end portions protrude from the outer surface of the resin package 4, and a semiconductor light emitting element 7 mounted on one end portion of the lead frames 5 and 6 in the recess 2. doing. The semiconductor light emitting element 7 in the recess 2 is sealed with a sealing resin 28 made of epoxy or the like having optical transparency. The one end portions of the lead frames 5 and 6 indicate the center side of the resin package 4, and the other end portions indicate both outer sides of the resin package 4.

リードフレーム５は、接続用フレーム８および放熱用フレーム１０を片側に重ねて配置し、その反対側に接続用フレーム９および放熱用フレーム１１を重ねて配置している。   In the lead frame 5, the connection frame 8 and the heat dissipation frame 10 are arranged on one side and the connection frame 9 and the heat dissipation frame 11 are arranged on the opposite side.

半導体発光素子７のｎ電極およびｐ電極は、サブ基板１２にバンプ（図示せず）を介して接続されている。サブ基板１２のｎ電極は、片側の接続用フレーム８に導電性接着剤を用いて固着され、ｐ側電極は、その反対側の接続用フレーム９に金線２９をワイヤボンディングすることにより接続されている。   The n electrode and the p electrode of the semiconductor light emitting element 7 are connected to the sub-substrate 12 via bumps (not shown). The n-electrode of the sub-substrate 12 is fixed to the connection frame 8 on one side using a conductive adhesive, and the p-side electrode is connected to the connection frame 9 on the opposite side by wire bonding a gold wire 29. ing.

樹脂パッケージ４は、ガラス繊維を混入した白色の熱可塑性樹脂からなり、直方体状に形成されている。凹部２は、樹脂パッケージ４の光取り出し面に形成されている。凹部２は、断面円形で、奥側に行くほど徐々に縮径する形状に形成されている。   The resin package 4 is made of a white thermoplastic resin mixed with glass fibers and is formed in a rectangular parallelepiped shape. The recess 2 is formed on the light extraction surface of the resin package 4. The concave portion 2 has a circular cross section and is formed in a shape that gradually decreases in diameter toward the back side.

図２は放熱用フレーム１０，１１の平面図を示す。図２に示すように、放熱用フレーム１０、１１は、アルミニウム合金等の放熱性がよい材料により形成され、対向する一端部の両角部にそれぞれ面取り部１５〜１８を形成している。   FIG. 2 is a plan view of the heat dissipating frames 10 and 11. As shown in FIG. 2, the heat dissipating frames 10 and 11 are formed of a material having good heat dissipation such as an aluminum alloy, and chamfered portions 15 to 18 are formed at both corners of one end portion facing each other.

また、放熱用フレーム１０，１１の他端部は、樹脂パッケージ４内で２つに分岐して外側面からそれぞれ突出している。すなわち、放熱用フレーム１０，１１は、Ｕ字状に形成され、それぞれの開口部１３，１４を他端側に配置し、それぞれの溝底部を一端側に配置している。また、対向した面取り部１５，１７および面取り部１６，１８の間の隙間１９，２０は三角形状に形成されている。   Further, the other end portions of the heat dissipating frames 10 and 11 are branched into two in the resin package 4 and project from the outer surfaces. That is, the heat dissipating frames 10 and 11 are formed in a U-shape, and the respective openings 13 and 14 are disposed on the other end side, and the respective groove bottoms are disposed on the one end side. Further, the gaps 19 and 20 between the facing chamfered portions 15 and 17 and the chamfered portions 16 and 18 are formed in a triangular shape.

図３は接続用フレーム８，９の平面図を示す。図３に示すように、接続用フレーム８，９は、鉄合金や銅合金等の表面に銀めっきを施したもので、半導体発光素子７との接続性がよい材料を使用している。   FIG. 3 is a plan view of the connection frames 8 and 9. As shown in FIG. 3, the connection frames 8 and 9 are obtained by applying silver plating to the surface of an iron alloy, a copper alloy, or the like, and using a material having good connectivity with the semiconductor light emitting element 7.

接続用フレーム８，９は、それぞれの一側端部に幅狭の素子接続部２１，２２を有し、中間部に放熱用拡形部２３，２４を有し、他側に接続端子部２５，２６を有している。   Each of the connection frames 8 and 9 has narrow element connection portions 21 and 22 at one end portion thereof, has heat radiation enlarged portions 23 and 24 at an intermediate portion, and a connection terminal portion 25 on the other side. , 26.

図１に示すように、素子接続部２１，２２および放熱用拡形部２３，２４は、放熱用フレーム１０，１１に当接した状態で重ねて配置され、接続端子部２５，２６は、放熱用フレーム１０，１１とは重ならない位置に配置されている。   As shown in FIG. 1, the element connecting portions 21 and 22 and the heat radiating expanded portions 23 and 24 are arranged so as to be in contact with the heat radiating frames 10 and 11, and the connection terminal portions 25 and 26 are radiated. It arrange | positions in the position which does not overlap with the frames 10 and 11 for work.

接続用フレーム８，９の一端部であって、樹脂パッケージ４の凹部２の底面２７に露出している部分は、放熱用フレーム１０，１１の露出している部分より小さく形成されている。   One end of the connection frames 8 and 9, which is exposed at the bottom surface 27 of the recess 2 of the resin package 4, is formed smaller than the exposed portion of the heat dissipation frames 10 and 11.

放熱用フレーム１０，１１の他端部は、接続用フレーム８，９の他端部と同じ形状に折り曲げられている。すなわち、放熱用フレーム１０，１１の他端部および接続用フレーム８，９の他端部は、樹脂パッケージ４の外側で下方に屈曲し、その先部がそれぞれ一側に屈曲し、樹脂パッケージ４の下面に当接している。   The other end portions of the heat dissipating frames 10 and 11 are bent in the same shape as the other end portions of the connecting frames 8 and 9. That is, the other end portions of the heat dissipating frames 10 and 11 and the other end portions of the connecting frames 8 and 9 are bent downward on the outside of the resin package 4, and the tip portions thereof are bent to one side, respectively. It is in contact with the lower surface of.

次に半導体発光装置１の製造方法について説明する。   Next, a method for manufacturing the semiconductor light emitting device 1 will be described.

リードフレーム５，６は、平板状の材料をそれぞれプレスで打ち抜いて形成されるが、インサート成型を行うときには、それぞれの他端部が支持フレーム（図示せず）から分離していない状態で行われる。   The lead frames 5 and 6 are each formed by stamping a flat plate material with a press. When insert molding is performed, each of the other end portions is not separated from a support frame (not shown). .

対となる接続用フレーム８，９が多数形成された支持フレームと、対となる放熱用フレーム１０，１１が多数形成された支持フレームとは、同じ外形に形成され、放熱用フレーム１０，１１が形成された支持フレームに接続用フレーム８，９が形成された支持フレームを重ねると、図１に示すように製品と同じ配置となる。両支持フレームは接着剤等を用いずに無接合状態で重ねられる。   A support frame in which a large number of paired connection frames 8 and 9 are formed and a support frame in which a large number of paired heat dissipation frames 10 and 11 are formed are formed in the same outer shape, and the heat dissipation frames 10 and 11 are formed. When the support frame on which the connection frames 8 and 9 are formed is overlapped on the formed support frame, the arrangement is the same as that of the product as shown in FIG. Both supporting frames are stacked in a non-joined state without using an adhesive or the like.

これを成型金型にセットし、樹脂パッケージ４が設けられる部分の外側を上型および下型で挟持する。放熱用フレーム１０，１１の一側部分と接続用フレーム８，９の一側部を隙間なく重ねた状態で、キャビティ内に熱可塑性樹脂を流入させて充填する。使用される熱可塑性樹脂はガラス繊維等が混入されているので、流動性が悪く、接続用フレーム８，９と放熱用フレーム１０，１１との間の隙間には浸入しない。従って、接続用フレーム８，９と放熱用フレーム１０，１１とが直接当接した状態で成型されるので、熱伝達率が向上し、放熱を効率よく行うことができる。なお、放熱用フレーム１０，１１の表面は、熱可塑性樹脂で覆われ、凹部２内には露出しない。   This is set in a molding die, and the outside of the portion where the resin package 4 is provided is sandwiched between the upper die and the lower die. In a state where one side portion of the heat dissipating frames 10 and 11 and one side portion of the connecting frames 8 and 9 are overlapped with no gap, a thermoplastic resin is poured into the cavity and filled. Since the thermoplastic resin used is mixed with glass fiber or the like, it has poor fluidity and does not enter the gap between the connection frames 8 and 9 and the heat dissipation frames 10 and 11. Therefore, since the connection frames 8 and 9 and the heat dissipating frames 10 and 11 are molded in direct contact with each other, the heat transfer rate is improved and heat can be efficiently dissipated. The surfaces of the heat dissipating frames 10 and 11 are covered with a thermoplastic resin and are not exposed in the recess 2.

樹脂パッケージ４を製造した後は、接続用フレーム８，９にサブ基板１２に搭載された半導体発光素子７を接続し、その後、凹部２内にエポキシ樹脂を充填して硬化させる。エポキシ樹脂は、銀めっきされた接続用フレーム８，９との密着性が悪いが、接続用フレーム８，９の大きさが小さく形成されているので、エポキシ樹脂の密着性をよくすることができ、装置の信頼性が向上する。   After the resin package 4 is manufactured, the semiconductor light emitting element 7 mounted on the sub-board 12 is connected to the connection frames 8 and 9, and then the recess 2 is filled with epoxy resin and cured. The epoxy resin has poor adhesion to the silver-plated connection frames 8 and 9, but since the size of the connection frames 8 and 9 is small, the adhesion of the epoxy resin can be improved. The reliability of the device is improved.

そして、支持フレームから各他端部を切断し、屈曲させることにより、図１に示すような半導体発光装置１を製造することができる。   Then, by cutting and bending each other end from the support frame, the semiconductor light emitting device 1 as shown in FIG. 1 can be manufactured.

次に、半導体発光装置１の使用状態について説明する。   Next, the usage state of the semiconductor light emitting device 1 will be described.

半導体発光装置１は、例えば、回路基板上の電極端子に接続用フレーム８，９の他端部を導通接続されて面実装される。このとき、放熱用フレーム１０，１１の他端部も接続用フレーム８，９の他端部と同じ形状に形成されているので、回路基板上の電極端子に接続することができる。   For example, the semiconductor light emitting device 1 is surface-mounted by electrically connecting the other ends of the connection frames 8 and 9 to electrode terminals on a circuit board. At this time, since the other end portions of the heat dissipating frames 10 and 11 are also formed in the same shape as the other end portions of the connecting frames 8 and 9, they can be connected to electrode terminals on the circuit board.

回路基板上の電極端子に電圧が加わると、半導体発光素子７内に電流が流れ発光層が発光し、熱を発生させる。光は、封止樹脂２８内を通過し、反射壁３で反射して外側に取り出される。   When a voltage is applied to the electrode terminals on the circuit board, a current flows in the semiconductor light emitting element 7 and the light emitting layer emits light to generate heat. The light passes through the sealing resin 28, is reflected by the reflecting wall 3, and is extracted outside.

一方、発生した熱は、半導体発光素子７の底面から接続用フレーム８の素子接続部２１に伝達される。また、半導体発光素子７から発生した熱の一部は金線２９を介して接続用フレーム９の素子接続部２２に伝達される。   On the other hand, the generated heat is transmitted from the bottom surface of the semiconductor light emitting element 7 to the element connection portion 21 of the connection frame 8. A part of the heat generated from the semiconductor light emitting element 7 is transmitted to the element connecting portion 22 of the connection frame 9 through the gold wire 29.

素子接続部２１，２２に伝達された熱は、放熱用拡形部２３，２４に伝導されるとともに放熱用フレーム１０，１１に伝達される。そして、放熱用拡形部２３，２４および放熱用フレームの一側部内を伝導されてそれぞれの他端部を介して回路基板の電極に熱を放出する。このように迅速に熱を放出するので、半導体発光素子７の温度上昇が抑えられ、この分だけ駆動電流を増加させることができる。   The heat transmitted to the element connecting portions 21 and 22 is conducted to the heat radiating expanded portions 23 and 24 and also to the heat radiating frames 10 and 11. And it is conducted in one side part of the heat radiation expansion parts 23 and 24 and the heat radiation frame and releases heat to the electrodes of the circuit board through the other end parts. Since heat is quickly released in this way, the temperature rise of the semiconductor light emitting element 7 can be suppressed, and the drive current can be increased by this amount.

また、半導体発光装置１は、放熱用フレーム１０，１１と接続用フレーム８，９を重ねて配置しているので、面積を小さくしても十分な放熱性を有している。面積を小さくすることにより、開口部１３，１４および隙間１９，２０で上下の樹脂を一体的に接続することができ、リードフレーム５，６から樹脂が剥離することが防止される。   In addition, since the semiconductor light emitting device 1 has the heat dissipating frames 10 and 11 and the connection frames 8 and 9 arranged in an overlapping manner, the semiconductor light emitting device 1 has sufficient heat dissipation even if the area is reduced. By reducing the area, the upper and lower resins can be integrally connected through the openings 13 and 14 and the gaps 19 and 20, and the resin is prevented from being peeled off from the lead frames 5 and 6.

本発明の半導体発光装置は接続用フレームと放熱用フレームとを、重ねて配置することによって、放熱効果が必要な用途にも適用できる。   The semiconductor light emitting device of the present invention can be applied to applications that require a heat dissipation effect by arranging the connection frame and the heat dissipation frame in an overlapping manner.

（Ａ）は本発明の一実施の形態の半導体発光装置の平面図、（Ｂ）は同半導体発光装置の断面図(A) is a top view of the semiconductor light-emitting device of one embodiment of the present invention, (B) is a cross-sectional view of the semiconductor light-emitting device 放熱用フレームの平面図Top view of the heat dissipation frame 接続用フレームの平面図Top view of connection frame 従来の半導体発光装置の平面図Plan view of a conventional semiconductor light emitting device 従来の他の半導体発光装置の断面図Sectional view of another conventional semiconductor light emitting device

符号の説明Explanation of symbols

１ 半導体発光装置
２ 凹部
３ 反射壁
４ 樹脂パッケージ
５，６ リードフレーム
７ 半導体発光素子
８，９ 接続用フレーム
１０，１１ 放熱用フレーム
１２ サブ基板
１３，１４ 開口部
１５〜１８ 面取り部
１９，２０ 隙間
２１，２２ 素子接続部
２３，２４ 放熱用拡形部
２５，２６ 接続端子部
２７ 底面
２８ 封止樹脂
２９ 金線 DESCRIPTION OF SYMBOLS 1 Semiconductor light-emitting device 2 Recessed part 3 Reflecting wall 4 Resin package 5, 6 Lead frame 7 Semiconductor light-emitting element 8, 9 Connection frame 10, 11 Heat dissipation frame 12 Sub-board 13, 14 Opening 15-18 Chamfer 19, 20 Crevice 21, 22 Element connection part 23, 24 Heat radiation expansion part 25, 26 Connection terminal part 27 Bottom face 28 Sealing resin 29 Gold wire

Claims (6)

凹部の内周に反射壁を有する樹脂パッケージと、一端部が前記凹部の底面に露出し、他端部が前記樹脂パッケージの外側面から突出した一対のリードフレームと、前記凹部内の前記リードフレームの一端部に搭載された半導体発光素子とを有する半導体発光装置において、
前記リードフレームは、複数枚が重ねて配置されていることを特徴とする半導体発光装置。 A resin package having a reflecting wall on the inner periphery of the recess; a pair of lead frames having one end exposed at the bottom surface of the recess and the other end protruding from the outer surface of the resin package; and the lead frame in the recess In a semiconductor light emitting device having a semiconductor light emitting element mounted on one end of
A semiconductor light-emitting device, wherein a plurality of the lead frames are arranged to overlap each other. 前記リードフレームは、材質が異なる接続用フレームおよび放熱用フレームからなることを特徴とする請求項１に記載の半導体発光装置。 The semiconductor light emitting device according to claim 1, wherein the lead frame includes a connection frame and a heat dissipation frame made of different materials. 前記接続用フレームの表面には銀めっきが施され、前記凹部内にある前記接続用フレームの一端部は、前記凹部内にある前記放熱用フレームの一端部より小さく形成され、前記凹部内には、光透過性を有する樹脂により封止されていることを特徴とする請求項２に記載の半導体発光装置。 The surface of the connection frame is silver-plated, and one end of the connection frame in the recess is formed smaller than one end of the heat dissipation frame in the recess, and in the recess The semiconductor light-emitting device according to claim 2, wherein the semiconductor light-emitting device is sealed with a light-transmitting resin. 前記放熱用フレームの他端部は、前記樹脂パッケージ内で複数に分岐して前記外側面からそれぞれ突出し、前記接続用フレームの他端部とは重ならない位置に配置されていることを特徴とする請求項２または３に記載の半導体発光装置。 The other end of the heat dissipating frame is branched into a plurality of portions in the resin package and protrudes from the outer surface, and is disposed at a position that does not overlap the other end of the connecting frame. The semiconductor light emitting device according to claim 2. 前記放熱用フレームの他端部は、前記接続用フレームの他端部と同形状に折り曲げられていることを特徴とする請求項２から４のいずれかの項に記載の半導体発光装置。 5. The semiconductor light emitting device according to claim 2, wherein the other end of the heat dissipating frame is bent in the same shape as the other end of the connecting frame. 半導体発光素子が搭載される複数のリードフレームを成型金型に配置し、熱可塑性樹脂を用いて樹脂パッケージの成形を行う一体成型工程を有する半導体発光装置の製造方法において、
複数の前記リードフレームは、無接合状態で重ねられ、前記成型金型の上型および下型で挟持されて成型されることを特徴とする半導体発光装置の製造方法。 In a method for manufacturing a semiconductor light emitting device, the semiconductor light emitting device includes an integral molding step in which a plurality of lead frames on which semiconductor light emitting elements are mounted are arranged in a molding die and a resin package is molded using a thermoplastic resin.
A method of manufacturing a semiconductor light emitting device, wherein the plurality of lead frames are stacked in a non-bonded state, and are sandwiched and molded between an upper mold and a lower mold of the molding die.
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JP2007036073A (en) * 2005-07-29 2007-02-08 Hitachi Displays Ltd Lighting device and display unit using it
US8169128B2 (en) 2005-08-08 2012-05-01 Samsung Led Co., Ltd. LED package having recess in heat conducting part
EP1753038A2 (en) * 2005-08-08 2007-02-14 Samsung Electro-Mechanics Co., Ltd. Light emitting diode package having recess in heat conducting part
JP2007049149A (en) * 2005-08-08 2007-02-22 Samsung Electro-Mechanics Co Ltd Led package with recessed part formed in heat transmission part
EP1753038A3 (en) * 2005-08-08 2012-11-21 Samsung LED Co., Ltd. Light emitting diode package having recess in heat conducting part
KR101258230B1 (en) * 2005-10-04 2013-04-25 서울반도체 주식회사 Heat sink fin and light emitting diode using the same
KR100735325B1 (en) 2006-04-17 2007-07-04 삼성전기주식회사 Light emitting diode package and fabrication method thereof
JP2007305785A (en) * 2006-05-11 2007-11-22 Nichia Chem Ind Ltd Light emitting device
JP2009088534A (en) * 2007-10-01 2009-04-23 Yiguang Electronic Ind Co Ltd Light emitting diode device
JP2013211579A (en) * 2007-10-01 2013-10-10 Everlight Electronics Co Ltd Light emitting diode device
US9076942B2 (en) 2010-04-01 2015-07-07 Lg Innotek Co., Ltd. Lighting device and lighting system having the same
CN106169532A (en) * 2011-10-27 2016-11-30 首尔半导体株式会社 Light emission diode package member
CN110246834A (en) * 2018-03-08 2019-09-17 三星电子株式会社 Semiconductor light emitting device packaging piece
CN110246834B (en) * 2018-03-08 2024-03-19 三星电子株式会社 Semiconductor light emitting device package
US10923643B2 (en) 2018-06-25 2021-02-16 Nichia Corporation Package, light emitting device, and method of manufacturing the package
US11581463B2 (en) 2018-06-25 2023-02-14 Nichia Corporation Package
US11935995B2 (en) 2018-06-25 2024-03-19 Nichia Corporation Light emitting device

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