CN111048651A - High-reflectivity UVLED substrate and production method - Google Patents
High-reflectivity UVLED substrate and production method Download PDFInfo
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- CN111048651A CN111048651A CN201911381724.4A CN201911381724A CN111048651A CN 111048651 A CN111048651 A CN 111048651A CN 201911381724 A CN201911381724 A CN 201911381724A CN 111048651 A CN111048651 A CN 111048651A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
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- H—ELECTRICITY
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- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- H—ELECTRICITY
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- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
Abstract
The invention provides a high-reflectivity UVLED substrate and a working method thereof, wherein the high-reflectivity UVLED substrate comprises a metal substrate, a first insulating layer, a second insulating layer, a metal cover plate and a PTFE (polytetrafluoroethylene) reflecting layer; the first insulating layer is formed with a circuit layer; the metal substrate comprises a boss, the boss is formed by upward extending of the metal substrate, and more than one boss is arranged; the lug boss is provided with a bonding pad, the horizontal height of the lug boss is the same as that of the circuit layer, and the bonding pad is positioned above the circuit layer; according to the invention, the height of the metal substrate is improved by arranging the lug boss, and the lug boss is parallel to the circuit layer, so that the UVLED using the substrate can be directly contacted with the metal substrate; the heat dissipation effect is good; the reflection rate of light is improved by arranging the reflection layer made of PTFE (polytetrafluoroethylene); PTFE can bear high ultraviolet irradiation, and has excellent natural reflectivity to purple light, so that the reflected light is more uniform, and the reflection effect is good.
Description
Technical Field
The invention relates to an ultraviolet lamp curing technology, in particular to a high-reflectivity UVLED substrate and a production method thereof.
Background
With the development of technology, in recent years, the application of the UVLED is also new, and the market prospect of the UVLED is very bright. Compared with the traditional mercury lamp, the UVLED has more advantages, high efficiency, energy conservation, high energy, stable light output and good uniform irradiation effect; the paint is safe, environment-friendly, non-toxic and harmless; reliable and durable, and long service life. Therefore, the UVLED has wide application, and can sterilize air, food surfaces, water and medical treatment, effectively sterilize bacteria and block the spread of viruses by utilizing the sterilization function of deep ultraviolet; also can make the mosquito killer lamp; however, according to the thermal characteristics of the UVLED, the temperature rise of the LED is not obvious under a small current, and if the ambient temperature is high, the dominant wavelength of the UVLED is red-shifted, the brightness is reduced, and the uniformity and consistency of the light emission are poor.
A multi-chip parallel-serial UVLED array bracket is disclosed in Chinese patent application No. 201710243382.4, published as 2017.06.27; the support is of a laminated structure and comprises a heat dissipation layer, a first insulating layer, a circuit layer, a second insulating layer and a single-face mirror surface emitting layer which are sequentially overlapped, wherein the single-face mirror surface emitting layer is provided with uniformly distributed reflection cups, and chip bonding pads are arranged in intervals of the reflection cups.
However, the single-side mirror surface emitting layer of the bracket is made of light aluminum and ALC aluminum, light irradiates the light aluminum and the ALC aluminum and returns to generate mirror surface reflection, and the mirror surface has a smooth surface, so that the reflection direction is single, the light can only be reflected from a specific direction, and the reflected light is not uniform; meanwhile, the support is of a laminated structure, the chip welding point is positioned above the support, the heat dissipation layer is positioned below the support, and the chip welding point is not directly contacted with the heat dissipation layer, so that heat generated by the operation of the UVLED can reach the heat dissipation layer only through the first insulating layer, the circuit layer and the second insulating layer; the heat dissipation effect is poor.
Disclosure of Invention
The invention provides a high-reflectivity UVLED substrate with uniform reflection, good reflection effect and good heat dissipation effect and a production method thereof.
In order to achieve the purpose, the technical scheme of the invention is as follows: a production method of a high-reflectivity UVLED substrate comprises the following steps:
(1) pretreatment: etching a boss structure in a pad area of a metal substrate, forming a circuit layer on a first insulating layer, mixing and stirring glue A and glue B for 15 minutes, and then carrying out vacuum pumping treatment to form mixed glue AB; positioning holes are formed in the peripheries of the metal substrate and the PTFE reflecting layer;
(2) bonding the metal substrate with the first insulating layer;
(3) bonding the first insulating layer with the second insulating layer;
(4) bonding the PTFE reflecting layer with the metal cover plate;
(5) bonding the metal cover plate with the second insulating layer;
the step (4) of bonding the PTFE reflecting layer and the metal cover plate specifically comprises the following steps:
(4.1) polishing the surface of the PTFE reflecting layer and the surface of the metal cover plate;
(4.2) cleaning the surfaces of the PTFE reflecting layer and the metal cover plate by using a degreasing agent, and then cleaning by using absolute ethyl alcohol;
(4.3) coating the mixed glue on the upper surface of the metal cover plate, wherein the thickness of the glue layer is 50-100 mu m;
(4.4) correspondingly connecting the metal cover plate coated with the mixed glue and the positioning holes in the PTFE reflecting layer with the positioning pins of the jig;
(4.5) bonding the PTFE reflecting layer with the upper surface of the metal cover plate, and then performing pressing processing;
(4.6) placing the reflecting layer and the metal cover plate in an environment with the temperature of 25 ℃ and the relative humidity RH50% +/-10% for curing for 30 minutes, and performing the step (5) when the lap joint shear strength of the reflecting layer and the metal cover plate is more than 10 Mpa;
according to the production method, the AB mixed glue formed by mixing the glue A and the glue B is arranged, so that the bonding strength of the substrate is improved; in addition, the boss is arranged on the metal substrate, so that when the light-emitting chip is externally connected, the heat of the chip is directly radiated through the boss metal layer, the radiating effect is good, the surface of the reflecting layer and the surface of the metal cover plate are polished, the bonding surface of the reflecting layer and the metal cover plate is roughened, and the mixed AB glue can be better contacted with the roughened surface, so that the reflecting layer is stably bonded with the metal cover plate; the surface is cleaned by the degreasing agent, so that surface grease and dirt are effectively removed, and the bonding effect is improved; the bonding between the metal cover plate and the reflecting layer is firmer through pressing; then placing the mixed glue in an environment with normal temperature and relative humidity for curing, thus effectively improving the bonding strength of the mixed glue, simultaneously preventing the influence of curing through heating on the characteristics of the PTFE reflecting layer, and ensuring that the mixed glue is fully bonded with the reflecting layer and the metal cover plate within 30 minutes; the metal cover plate is bonded with the second insulating layer more firmly through pressing; the shoulder reflecting layer produced by the production method is firmly bonded with the metal cover plate, so that the PTFE reflecting layer forms diffuse reflection due to the microporous structure on the surface of the PTFE reflecting layer, and the light reflectivity of the UVLED using the substrate can be improved.
Further, the thickness of the glue layer of the mixed AB glue is 80 μm.
According to the arrangement, the adhesive bonding effect is good by arranging the mixed glue with the thickness of 80 microns.
Further, the step of bonding the metal substrate and the first insulating layer in the step (2) specifically comprises:
(2.1) coating the mixed AB glue on the upper surface of the metal substrate, wherein the thickness of the glue layer is 50-100 mu m; forming a circuit layer on the first insulating layer;
(2.2) bonding the first insulating layer with the upper surface of the metal substrate, and then performing pressing processing;
(2.3) adding a solder mask between the circuit layer and the boss;
(2.4) carrying out surface treatment on the pad area on the circuit layer;
the step (3) of bonding the first insulating layer and the second insulating layer specifically comprises the following steps:
(3.1) coating the mixed AB glue on the lower surface of the second insulating layer, wherein the glue layer is 50-100 mu m thick;
(3.2) bonding the lower surface of the second insulating layer with the upper surface of the first insulating layer, and then performing pressing processing;
the step (5) of bonding the metal cover plate and the second insulating layer specifically comprises the following steps:
(5.1) coating the mixed AB glue on the upper surface of the second insulating layer, wherein the thickness of the glue layer is 50-100 mu m;
(5.2) bonding the lower surface of the metal cover plate with the upper surface of the second insulating layer, and then performing pressing processing;
through the arrangement, the adhesive layer with a certain thickness is ensured between the first insulating layer and the metal substrate, between the first insulating layer and the second insulating layer, and between the metal cover plate and the second insulating layer, and then the adhesive layer is processed in a pressing mode, so that the bonding reliability is ensured.
Further, the pretreatment in the step (1) further comprises: forming a connecting part on the circuit layer, wherein the top surface of the connecting part is flush with the plane of the boss, and forming a solder mask between the connecting part and the metal cover plate after the step (2.3);
above setting, through forming connecting portion on the circuit layer, and form the solder mask between connecting portion and metal cover plate to prevent the electric connection between boss and the circuit layer, make connecting portion and metal cover plate looks parallel and level simultaneously, conveniently brush the tin cream and realize welding process.
Further, the pressing processing is carried out through rolling of the copper bar.
Above setting, the bar copper self has certain gravity, rolls through the bar copper and applies decurrent pressure, can the exhaust air like this, makes the bonding effect better.
The invention also provides a high-reflectivity UVLED substrate which comprises a metal substrate, a first insulating layer, a second insulating layer, a metal cover plate and a PTFE (polytetrafluoroethylene) reflecting layer; a circuit layer is formed on the first insulating layer; the first insulating layer is positioned above the metal substrate, the circuit layer is positioned above the first insulating layer, the second insulating layer is arranged between the metal cover plate and the circuit layer, and the PTFE reflecting layer is arranged above the metal cover plate; the metal substrate comprises a boss, the boss is formed by upward extending of the metal substrate, more than one boss is arranged, and the height of the boss is the same as the height of the circuit layer at the highest position.
According to the arrangement, the height of the metal substrate is improved by arranging the lug boss, and the lug boss is parallel to the circuit layer, so that the UVLED using the substrate can be directly contacted with the metal substrate, and the heat dissipation effect is good; by arranging the metal cover plate, the circuit is prevented from being damaged during subsequent PTFE film pressing repair, the electric property is prevented from being poor, and meanwhile, the second insulating layer is prevented from being denatured under long-time irradiation of purple light; the circuit layer is separated from the metal cover plate by arranging the second insulating layer, so that poor electrical property caused by conduction between the circuit layers is prevented; the light reflectivity is improved by arranging the PTFE reflecting layer made of PTFE (polytetrafluoroethylene); the PTFE reflecting layer can bear high ultraviolet irradiation and has excellent natural reflectivity to purple light, so that the reflected light is more uniform and the reflecting effect is good.
Furthermore, a solder mask layer is arranged between the boss and the circuit layer.
Above setting, through setting up the solder mask, avoid in SMT technology, the tin flows into between circuit layer and the boss and switches on with metal substrate. Avoid causing bad electric property.
Furthermore, a gap is formed between the second insulating layer and the boss, and the height of the top surface of the second insulating layer is higher than that of the top surface of the boss.
Above setting, it is regional to form the pad between second insulating layer and the boss, conveniently carries out the manual welding of a small amount of lamp pearls.
Furthermore, the circuit layer upwards extends to have connecting portion, and connecting portion are located between boss and the metal cover plate, and the top surface and boss top surface, the connecting portion top surface looks parallel and level of PTFE reflection stratum.
Above setting up, PTFE reflection stratum and boss parallel and level, the convenient pad region to the base plate brushes the tin cream and handles, conveniently carries out the paster welding.
Furthermore, solder masks are arranged between the metal cover plate and the connecting part and between the PTFE reflecting layer and the connecting part.
Above setting, through setting up the solder mask, avoid in SMT technology, the tin flows into between circuit layer and the boss and switches on with metal substrate. Avoid causing bad electric property.
Drawings
Fig. 1 is a schematic structural diagram of an embodiment of the present invention.
Fig. 2 is an enlarged view of a in fig. 1.
Fig. 3 is a front view of a metal substrate in the present invention.
Fig. 4 is a side view of a metal substrate in the present invention.
FIG. 5 is a diagram of a first insulating layer and a circuit layer according to the present invention.
Fig. 6 is a structural view of a pad region of a wiring layer in the present invention.
Fig. 7 is a structural view of a second insulating layer in the present invention.
Fig. 8 is a structural view of a metal cover plate in the present invention.
Fig. 9 is a structural view of a reflective layer in the present invention.
Fig. 10 is a schematic structural diagram of another embodiment of the present invention.
FIG. 11 is a flow chart of the production method of the present invention.
Fig. 12 is a side view of a jig used in the production process of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
The first embodiment is as follows:
as shown in fig. 1 to 9 and 11, a high reflectivity UVLED substrate includes a metal substrate 1, a first insulating layer 2, a second insulating layer 4, a metal cover plate 5 and a PTFE reflective layer 6; a circuit layer 3 is formed on the first insulating layer 2; the first insulating layer 2 is located above the metal substrate 1, the line layer 3 is located above the first insulating layer 2, the second insulating layer 4 is disposed between the metal cover plate 5 and the line layer 3, and the PTFE reflective layer 6 is disposed above the metal cover plate 5. PTFE is an existing material.
In the present embodiment, the metal substrate 1 is a copper substrate; therefore, the LED device has a good heat dissipation effect while the production cost is ensured, and the service life of the LED device is ensured; the metal cover plate 5 is an aluminum alloy cover plate; thus, the PTFE reflecting layer 6 can be highly adhered to the metal cover plate 5; the first insulating layer 2 and the second insulating layer 4 are composed of a mixture of alumina and silicon powder and an epoxy resin-filled polymer. Thus, the first insulating layer 2 and the second insulating layer 4 are excellent in viscoelastic properties, have resistance to thermal aging, and can withstand mechanical and thermal stresses.
The metal substrate 1 includes a boss 11 and two or more positioning holes 12, and the number of the positioning holes 12 is two or more. In the embodiment, the positioning holes 12 are symmetrically arranged at two ends of the metal substrate 1, and more than four positioning holes 12 are arranged. The boss 11 is formed by extending the metal substrate 1 upwards, the boss 11 is located between the positioning holes 12 at the two ends, and more than one boss 11 is arranged. In the present embodiment, three bosses 11 are provided. The lands 11 are at the same level as the wiring layer 3. A gap is reserved between the second insulating layer 2 and the boss 11, so that a pad area is formed between the second insulating layer 2 and the boss 11, and manual welding of a small number of lamp beads is facilitated.
And a solder mask layer 8 is arranged between the boss 11 and the circuit layer 3. By arranging the solder mask layer 8, the situation that tin flows between the circuit layer 3 and the boss 11 and is conducted with the metal substrate 1 in the SMT process is avoided. Avoid causing bad electric property. In the present embodiment, the solder resist layer 8 is solder resist ink.
The first insulating layer 2 is provided with a first positioning hole 21 matched with the positioning hole 12; the second insulating layer 4 is provided with a second positioning hole 41, a first through hole 42 and a second through hole 43; the second positioning hole 41 is fitted to the positioning hole 12, and the first through hole 42 and the second through hole 43 are regions to be fitted to the pads.
The metal cover plate 5 is provided with a cover plate positioning hole, a third through hole 52 and a fourth through hole 53; the cover positioning hole is fitted with the positioning hole 12, and the third through hole 52 and the fourth through hole 53 are regions to be fitted with the land.
The reflecting layer 6 is provided with a reflecting positioning hole 61, a fifth through hole 62 and a sixth through hole 63; the reflection positioning hole 61 is fitted to the positioning hole 12, and the fifth through hole 62 and the sixth through hole 63 are regions fitted to the pads.
The fifth through hole 62 and one of the sixth through holes 63 are provided with a notch 64, and the notch 64 is set as a positive pole mark to replace the traditional silk-screen printing process of the substrate. This embodiment is applicable to the manual welding that the lamp pearl is few.
The pre-fixing among the multiple layers is realized by inserting the positioning pin in the jig into the positioning hole 12, the first positioning hole 21, the second positioning hole 41, the cover plate positioning hole and the reflection positioning hole 61; thus, the first insulating layer 2, the second insulating layer 4, the metal cover plate 5 and the reflecting layer 6 are accurately bonded on the metal substrate 1; and the offset is avoided when the adhesive is bonded.
The height of the metal substrate 1 is improved by arranging the boss 11, and the boss 11 is parallel to the circuit layer 3, so that the UVLED using the substrate can be directly contacted with the metal substrate 1; the heat dissipation effect is good; the metal cover plate 5 is arranged, so that the circuit is prevented from being damaged during subsequent PTFE film pressing repair, the electric property is prevented from being poor, and meanwhile, the second insulating layer 4 is prevented from being denatured under long-time irradiation of purple light; the second insulating layer 4 is arranged to separate the circuit layer 3 from the metal cover plate, so that poor electrical property caused by conduction between the circuit layers 3 is prevented; the PTFE (polytetrafluoroethylene) reflective layer 6 is provided to improve the reflectance of light; PTFE can bear high ultraviolet irradiation, and has excellent natural reflectivity to purple light, so that the reflected light is more uniform, and the reflection effect is good.
The production method of the high-reflectivity UVLED substrate corresponding to the embodiment comprises the following steps:
(1) pretreatment: etching a boss structure in a pad area of a metal substrate, forming a circuit layer on a first insulating layer, mixing and stirring glue A and glue B for 15 minutes, and then carrying out vacuum pumping treatment to form mixed glue AB; positioning holes are formed in the peripheries of the metal substrate and the PTFE reflecting layer; wherein, the glue A is generally composed of resin, filler and plasticizer, and the glue B is composed of curing agent, accelerator, filler and diluent;
(2) bonding the metal substrate with the first insulating layer;
(3) bonding the first insulating layer with the second insulating layer;
(4) bonding the PTFE reflecting layer with the metal cover plate;
(5) bonding the metal cover plate with the second insulating layer;
the step (2) of bonding the metal substrate and the first insulating layer specifically comprises the following steps:
(2.1) coating the mixed AB glue on the upper surface of the metal substrate, wherein the thickness of the glue layer is 50-100 mu m; forming a circuit layer on the first insulating layer;
(2.2) bonding the first insulating layer with the upper surface of the metal substrate, and then performing pressing processing;
(2.3) adding a solder mask between the circuit layer and the boss;
(2.4) carrying out surface treatment on the pad area on the circuit layer;
the step (3) of bonding the first insulating layer and the second insulating layer specifically comprises the following steps:
(3.1) coating the mixed AB glue on the lower surface of the second insulating layer, wherein the glue layer is 50-100 mu m thick;
(3.2) bonding the lower surface of the second insulating layer with the upper surface of the first insulating layer, and then performing pressing processing;
the step (4) of bonding the PTFE reflecting layer and the metal cover plate specifically comprises the following steps:
(4.1) polishing the surface of the PTFE reflecting layer and the surface of the metal cover plate;
(4.2) cleaning the surfaces of the PTFE reflecting layer and the metal cover plate by using a degreasing agent, and then cleaning by using absolute ethyl alcohol;
(4.3) coating the mixed AB glue on the upper surface of the metal cover plate, wherein the thickness of the glue layer is 50-100 mu m;
(4.4) bonding the PTFE reflecting layer with the upper surface of the metal cover plate, and then performing pressing processing;
(4.5) placing the PTFE reflecting layer and the metal cover plate in an environment with the temperature of 25 ℃ and the relative humidity of PH50% +/-10% for curing for 30 minutes, and performing the step (5) when the lap joint shear strength of the PTFE reflecting layer and the metal cover plate is more than 10 Mpa;
the step (5) of bonding the metal cover plate and the second insulating layer specifically comprises the following steps:
(5.1) coating the mixed AB glue on the upper surface of the second insulating layer, wherein the thickness of the glue layer is 50-100 mu m;
and (5.2) bonding the lower surface of the metal cover plate with the upper surface of the second insulating layer, and then performing pressing processing.
The production method comprises the following steps: step (1), glue A and glue B are mixed and stirred through a centrifugal stirrer, so that the mixed glue can be uniformly stirred, and the problem that the bonding effect is inconsistent due to nonuniform stirring of the mixed glue is avoided.
And (2.1) coating the mixed glue on the upper surface of the metal substrate 1 by an automatic coating machine, wherein the thickness of the glue layer is 80 microns, so that the mixed glue can be uniformly coated on the metal substrate 1, and the phenomenon that the bonded substrate is uneven due to uneven mixed glue on the upper surface of the metal substrate 1 is avoided.
Step (2.3), adding a solder mask between the circuit layer and the boss; specifically include to add the solder mask between boss and circuit layer, the addition of solder mask is realized through the fat liquoring.
And (3.1) coating the mixed glue on the lower surface of the second insulating layer 4 by an automatic coating machine, wherein the glue layer thickness is 80 microns, so that the mixed glue can be uniformly coated on the second insulating layer 4, and the phenomenon that the bonded substrate is uneven due to uneven mixed glue on the lower surface of the second insulating layer 4 is avoided.
And (4.1) polishing the surfaces of the PTFE reflecting layer 6 and the metal cover plate 5 by using No. 0 abrasive paper, so that the surfaces of the PTFE reflecting layer 6 and the metal cover plate 5 can be polished to be rougher, and the bonding is convenient.
Step (4.2), in the present embodiment, the surfaces of the PTFE reflective layer 6 and the metal cover plate 5 are cleaned by acetone.
And (4.3) coating the mixed glue on the upper surface of the metal substrate 1 by an automatic coating machine, wherein the thickness of the glue layer is 80 microns, so that the mixed glue can be uniformly coated on the metal substrate 1, and the phenomenon that the bonded substrate is uneven due to uneven mixed glue on the upper surface of the metal substrate 1 is avoided.
And (5.1) coating the mixed glue on the upper surface of the second insulating layer 4 by an automatic coating machine, wherein the thickness of the glue layer is 80 microns, so that the mixed glue can be uniformly coated on the second insulating layer 4, and the phenomenon that the bonded substrate is uneven due to uneven mixed glue on the upper surface of the second insulating layer 4 is avoided.
The pressing processing of the production method is to carry out pressing through rolling of the copper bar. In this embodiment, a copper rod with a diameter of 10mm is used for pressing. The copper rod has certain gravity, and downward pressure is applied by rolling of the copper rod, so that air can be discharged, and the bonding effect is better.
Example two:
in another embodiment, as shown in fig. 11, the metal substrate 1 is extended upward with a boss 11, and the top surface of the boss 11 is flush with the upper surface of the PTFE reflective layer; a gap is formed between the boss 11 and the second reflecting layer 4, the circuit layer is positioned in the gap and extends upwards to form a connecting part 31, a solder mask layer 8 is arranged between the boss 11 and the connecting part 31, and the solder mask layer 8 is also arranged between the connecting part 31 and the reflecting layer 6 and between the connecting part and the metal cover plate 5; the solder mask layer 8 is solder resist ink in this embodiment, which is suitable for use in steel mesh brush paste pad soldering.
The production method of the high-reflectivity UVLED substrate corresponding to the embodiment comprises the following steps:
(1) pretreatment: etching a boss 11 structure in a pad area of the metal substrate 1, forming a circuit layer on the first insulating layer, forming a connecting part 31 extending upwards on the circuit layer, mixing and stirring the glue A and the glue B for 15 minutes, and then carrying out vacuum-pumping treatment to form mixed glue AB; positioning holes are formed in the peripheries of the metal substrate and the PTFE reflecting layer; wherein, the glue A is generally composed of resin, filler and plasticizer, and the glue B is composed of curing agent, accelerator, filler and diluent;
(2) bonding the metal substrate with the first insulating layer;
(3) bonding the first insulating layer with the second insulating layer;
(4) bonding the PTFE reflecting layer with the metal cover plate;
(5) bonding the metal cover plate with the second insulating layer;
the step (2) of bonding the metal substrate and the first insulating layer specifically comprises the following steps:
(2.1) coating the mixed AB glue on the upper surface of the metal substrate, wherein the thickness of the glue layer is 50-100 mu m; forming a circuit layer on the first insulating layer;
(2.2) bonding the first insulating layer with the upper surface of the metal substrate, and then performing pressing processing;
(2.3) adding a solder mask between the circuit layer and the boss;
(2.4) carrying out surface treatment on the pad area on the circuit layer;
the step (3) of bonding the first insulating layer and the second insulating layer specifically comprises the following steps:
(3.1) coating the mixed AB glue on the lower surface of the second insulating layer, wherein the glue layer is 50-100 mu m thick;
(3.2) bonding the lower surface of the second insulating layer with the upper surface of the first insulating layer, and then performing pressing processing;
the step (4) of bonding the PTFE reflecting layer and the metal cover plate specifically comprises the following steps:
(4.1) polishing the surface of the PTFE reflecting layer and the surface of the metal cover plate;
(4.2) cleaning the surfaces of the PTFE reflecting layer and the metal cover plate by using a degreasing agent, and then cleaning by using absolute ethyl alcohol;
(4.3) coating the mixed AB glue on the upper surface of the metal cover plate, wherein the thickness of the glue layer is 50-100 mu m;
(4.4) correspondingly connecting the metal cover plate coated with the mixed glue and the positioning holes in the PTFE reflecting layer with the positioning pins of the jig;
(4.5) bonding the PTFE reflecting layer with the upper surface of the metal cover plate, and then performing pressing processing;
(4.6) placing the PTFE reflecting layer and the metal cover plate in an environment with the temperature of 25 ℃ and the relative humidity of PH50% +/-10% for curing for 30 minutes, and performing the step (5) when the lap joint shear strength of the PTFE reflecting layer and the metal cover plate is more than 10 Mpa;
the step (5) of bonding the metal cover plate and the second insulating layer specifically comprises the following steps:
(5.1) coating the mixed AB glue on the upper surface of the second insulating layer, wherein the thickness of the glue layer is 50-100 mu m;
and (5.2) bonding the lower surface of the metal cover plate with the upper surface of the second insulating layer, and then performing pressing processing.
The production method comprises the following steps: step (1), glue A and glue B are mixed and stirred through a centrifugal stirrer, so that the mixed glue can be uniformly stirred, and the problem that the bonding effect is inconsistent due to nonuniform stirring of the mixed glue is avoided.
And (2.1) coating the mixed glue on the upper surface of the metal substrate 1 by an automatic coating machine, wherein the thickness of the glue layer is 80 microns, so that the mixed glue can be uniformly coated on the metal substrate 1, and the phenomenon that the bonded substrate is uneven due to uneven mixed glue on the upper surface of the metal substrate 1 is avoided.
Step (2.3), adding a solder mask between the circuit layer and the boss; the method specifically comprises the steps of adding a solder mask between a boss and a connecting part of a circuit layer, and further comprises adding a solder mask between the circuit layer and a metal cover plate and a PTFE (polytetrafluoroethylene) reflecting layer after the step, wherein the solder mask is added through inking.
And (3.1) coating the mixed glue on the lower surface of the second insulating layer 4 by an automatic coating machine, wherein the glue layer thickness is 80 microns, so that the mixed glue can be uniformly coated on the second insulating layer 4, and the phenomenon that the bonded substrate is uneven due to uneven mixed glue on the lower surface of the second insulating layer 4 is avoided.
And (4.1) polishing the surfaces of the PTFE reflecting layer 6 and the metal cover plate 5 by using No. 0 abrasive paper, so that the surfaces of the PTFE reflecting layer 6 and the metal cover plate 5 can be polished to be rougher, and the bonding is convenient.
Step (4.2), in the present embodiment, the surfaces of the PTFE reflective layer 6 and the metal cover plate 5 are cleaned by acetone.
And (4.3) coating the mixed glue on the upper surface of the metal substrate 1 by an automatic coating machine, wherein the thickness of the glue layer is 80 microns, so that the mixed glue can be uniformly coated on the metal substrate 1, and the phenomenon that the bonded substrate is uneven due to uneven mixed glue on the upper surface of the metal substrate 1 is avoided.
And (5.1) coating the mixed glue on the upper surface of the second insulating layer 4 by an automatic coating machine, wherein the thickness of the glue layer is 80 microns, so that the mixed glue can be uniformly coated on the second insulating layer 4, and the phenomenon that the bonded substrate is uneven due to uneven mixed glue on the upper surface of the second insulating layer 4 is avoided.
The pressing processing of the production method is to carry out pressing through rolling of the copper bar. In this embodiment, a copper rod with a diameter of 10mm is used for pressing. The copper rod has certain gravity, and downward pressure is applied by rolling of the copper rod, so that air can be discharged, and the bonding effect is better.
The glue A and the glue B are mixed to form the glue AB, so that the bonding strength of the substrate is improved; meanwhile, the vacuum pumping treatment can discharge air in the mixed glue, so that the bonding effect is prevented from being influenced; the bonding between the first insulating layer 2 and the metal substrate 1 is firmer through pressing processing; the solder mask layer 8 is added, so that the tin is prevented from flowing between the circuit layer 3 and the boss 11 and being conducted with the metal substrate 1 in the SMT process; avoid causing bad electric property; the surface of the welding disc area is processed, so that the formed substrate is conveniently connected with the UVLED lamp; the bonding between the first insulating layer 2 and the second insulating layer 4 is firmer through pressing processing;
polishing the surface of the PTFE reflecting layer 6 and the surface of the metal cover plate 5 to roughen the bonding surface of the PTFE reflecting layer 6 and the metal cover plate 5, so that the mixed glue can be better contacted with the rough surface, and the PTFE reflecting layer 6 is stably bonded with the metal cover plate 5; the surface is cleaned by the degreasing agent, so that surface grease and dirt are effectively removed, and the bonding effect is improved;
the metal cover plate 5 and the PTFE reflecting layer 6 are bonded more firmly through pressing; then, the mixed glue is placed in an environment with the temperature of 25 ℃ and the relative humidity PH of 50 +/-10% for curing, so that the bonding strength of the mixed glue is effectively improved, and meanwhile, the curing time is 30 minutes, so that the mixed glue is fully bonded with the PTFE reflecting layer 6 and the metal cover plate 5; the bonding between the metal cover plate 5 and the second insulating layer 4 is firmer through pressing; the PTFE reflecting layer 6 produced by the production method is firmly bonded with the metal cover plate 5, so that the PTFE reflecting layer 6 can improve the light reflectivity of the UVLED using the substrate.
Claims (10)
1. A production method of a high-reflectivity UVLED substrate is characterized by comprising the following steps: the method comprises the following steps:
(1) pretreatment: etching a boss in a pad area of a metal substrate, forming a circuit layer on a first insulating layer, mixing and stirring glue A and glue B for 15 minutes, and then carrying out vacuum pumping treatment to form mixed glue AB; positioning holes are formed in the peripheries of the metal substrate and the PTFE reflecting layer;
(2) bonding the metal substrate with the first insulating layer;
(3) bonding the first insulating layer with the second insulating layer;
(4) bonding the PTFE reflecting layer with the metal cover plate;
(5) bonding the metal cover plate with the second insulating layer;
the step (4) of bonding the PTFE reflecting layer and the metal cover plate specifically comprises the following steps:
(4.1) polishing the surface of the PTFE reflecting layer and the surface of the metal cover plate;
(4.2) cleaning the surfaces of the PTFE reflecting layer and the metal cover plate by using a degreasing agent, and then cleaning by using absolute ethyl alcohol;
(4.3) coating the mixed glue on the upper surface of the metal cover plate, wherein the thickness of the glue layer is 50-100 mu m;
(4.4) correspondingly connecting the metal cover plate coated with the mixed glue and the positioning holes in the PTFE reflecting layer with the positioning pins of the jig;
(4.5) bonding the PTFE reflecting layer with the upper surface of the metal cover plate, and then performing pressing processing;
and (4.6) placing the reflecting layer and the metal cover plate in an environment with the temperature of 25 ℃ and the relative humidity RH50% +/-10% for curing for 30 minutes, and performing the step (5) when the lap shear strength of the reflecting layer and the metal cover plate is more than 10 Mpa.
2. The method of claim 1, wherein the method comprises the steps of: the thickness of the glue layer of the mixed AB glue is 80 μm.
3. The method of claim 1, wherein the method comprises the steps of: the step (2) of bonding the metal substrate and the first insulating layer specifically comprises the following steps:
(2.1) coating the mixed AB glue on the upper surface of the metal substrate, wherein the thickness of the glue layer is 50-100 mu m; forming a circuit layer on the first insulating layer;
(2.2) bonding the first insulating layer with the upper surface of the metal substrate, and then performing pressing processing;
(2.3) adding a solder mask between the circuit layer and the boss;
(2.4) carrying out surface treatment on the pad area on the circuit layer;
the step (3) of bonding the first insulating layer and the second insulating layer specifically comprises the following steps:
coating the mixed AB glue on the lower surface of the second insulating layer, wherein the glue layer is 50-100 mu m thick;
(3.2) bonding the lower surface of the second insulating layer with the upper surface of the first insulating layer, and then performing pressing processing;
the step (5) of bonding the metal cover plate and the second insulating layer specifically comprises the following steps:
(5.1) coating the mixed AB glue on the upper surface of the second insulating layer, wherein the thickness of the glue layer is 50-100 mu m;
and (5.2) bonding the lower surface of the metal cover plate with the upper surface of the second insulating layer, and then performing pressing processing.
4. A method of producing a high reflectivity uv led substrate according to claim 1, wherein: the pretreatment in the step (1) further comprises the following steps: and (3) forming a connecting part on the circuit layer, wherein the top surface of the connecting part is flush with the plane of the boss, and forming a solder mask layer between the connecting part and the metal cover plate after the step (2.3).
5. A method of producing a high reflectivity uv led substrate according to claim 1, 2 or 3, wherein: and the pressing processing is carried out by rolling the copper bar.
6. A high reflectivity UVLED substrate according to claims 1 to 5 wherein: the PTFE reflection layer is arranged on the metal substrate; a circuit layer is formed on the first insulating layer; the first insulating layer is positioned above the metal substrate, the circuit layer is positioned above the first insulating layer, the second insulating layer is arranged between the metal cover plate and the circuit layer, and the PTFE reflecting layer is arranged above the metal cover plate; the metal substrate comprises a boss, the boss is formed by upward extending of the metal substrate, more than one boss is arranged, and the height of the boss is the same as the height of the circuit layer at the highest position.
7. A high reflectivity UVLED substrate according to claim 1, wherein: and a solder mask layer is arranged between the boss and the circuit layer.
8. A high reflectivity UVLED substrate according to claim 1, wherein: a gap is formed between the second insulating layer and the boss, and the height of the top surface of the second insulating layer is higher than that of the top surface of the boss.
9. A high reflectivity UVLED substrate according to claim 1, wherein: the circuit layer upwards extends and is provided with a connecting part, the connecting part is positioned between the boss and the metal cover plate, and the top surface of the PTFE reflecting layer is flush with the top surface of the boss and the top surface of the connecting part.
10. A high reflectivity UVLED substrate according to claim 9, wherein: and solder masks are arranged between the metal cover plate and the connecting part and between the PTFE reflecting layer and the connecting part.
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