CN112071972A - LED integrated light source manufacturing process and LED integrated light source - Google Patents

LED integrated light source manufacturing process and LED integrated light source Download PDF

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Publication number
CN112071972A
CN112071972A CN202010921283.9A CN202010921283A CN112071972A CN 112071972 A CN112071972 A CN 112071972A CN 202010921283 A CN202010921283 A CN 202010921283A CN 112071972 A CN112071972 A CN 112071972A
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China
Prior art keywords
layer
light source
integrated light
led integrated
chip
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Pending
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CN202010921283.9A
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Chinese (zh)
Inventor
戢利进
廖勇军
李文庭
张诺寒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dongguan Gma Optical Technology Co ltd
Xinyang Central Semiconductor Technology Co ltd
Xinyang Gma Optoelectronic Technology Co ltd
Guangdong Gma Optoelectronic Technology Co ltd
Original Assignee
Dongguan Gma Optical Technology Co ltd
Xinyang Central Semiconductor Technology Co ltd
Xinyang Gma Optoelectronic Technology Co ltd
Guangdong Gma Optoelectronic Technology Co ltd
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Application filed by Dongguan Gma Optical Technology Co ltd, Xinyang Central Semiconductor Technology Co ltd, Xinyang Gma Optoelectronic Technology Co ltd, Guangdong Gma Optoelectronic Technology Co ltd filed Critical Dongguan Gma Optical Technology Co ltd
Priority to CN202010921283.9A priority Critical patent/CN112071972A/en
Publication of CN112071972A publication Critical patent/CN112071972A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00Processes for applying liquids or other fluent materials
    • B05D1/36Successively applying liquids or other fluent materials, e.g. without intermediate treatment
    • B05D1/38Successively applying liquids or other fluent materials, e.g. without intermediate treatment with intermediate treatment
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/02Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
    • B05D3/0254After-treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/505Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0041Processes relating to semiconductor body packages relating to wavelength conversion elements

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

The invention relates to the technical field of LED integrated light sources, and discloses an LED integrated light source manufacturing process and an LED integrated light source. The manufacturing process of the LED integrated light source comprises the following steps of S10, adhering a plurality of chips in the counter bores of the substrate through an adhesive, and baking to form a chip layer; s20, conducting a plurality of chips, and reserving lead layers conducted with the chips; s30, placing an edge shielding frame on the periphery of the chip layer, mixing fluorescent powder, fluorescent glue and a diluent, spraying and coating the chip layer, taking down the edge shielding frame, baking to form a fluorescent layer, and placing the chip layer in the fluorescent layer; s40, dispensing packaging glue on the fluorescent layer, baking to form a packaging layer, and placing the chip layer in the packaging layer. By adding the diluent, the viscosity of the powder-glue mixed solution is reduced, so that the content of the fluorescent powder is more, and the brightness of the light generated after the light is excited is higher; the spraying mode enables the excitation efficiency of each part of the chip to be the same, ensures the uniformity of light emission, reduces the risk of glue cracking and prolongs the service life of the LED integrated light source.

Description

LED integrated light source manufacturing process and LED integrated light source
Technical Field
The invention relates to the technical field of LED integrated light sources, in particular to an LED integrated light source manufacturing process and an LED integrated light source.
Background
The LED integrated light source has the advantages of energy conservation, environmental protection, long service life and the like, and is widely applied to occasions requiring various illuminations.
At present, LED integrated light sources are in different packaging forms and structures in the packaging field, and most of the traditional packaging process forms are dispensing processes, namely, fluorescent powder and fluorescent glue are mixed and then dripped on a chip, and then the mixture is baked and cured to form a fluorescent layer. Because the content of the fluorescent glue in the powder glue mixed solution is far greater than that of the fluorescent powder, the problems of low content of the fluorescent powder, low brightness of light generated after excitation and the like are easily caused; meanwhile, due to the fact that the particle sizes and densities of the fluorescent powder are different, the problem that the concentration of the fluorescent powder in the powder-glue mixed liquid is uneven exists, the situation that the excitation efficiency is reduced occurs at the position where the concentration of the fluorescent powder is low, particularly a dark zone is formed at the edge of a chip, and the light emitting effect of the LED integrated light source is affected; in addition, as the drop has more powder and glue mixed liquid, when the LED integrated light source is driven by a high-power product or used for a long time, glue cracking easily occurs when the temperature of the fluorescent layer is locally raised, so that failure is caused, and the use is seriously influenced.
Therefore, a manufacturing process of an LED integrated light source is needed to solve the above problems.
Disclosure of Invention
Based on the above, the present invention provides a manufacturing process of an LED integrated light source and an LED integrated light source, which can uniformly place fluorescent powder on a chip, so that the brightness of the light generated after excitation is high and the uniformity is good.
In order to achieve the purpose, the invention adopts the following technical scheme:
an LED integrated light source manufacturing process, comprising the following steps:
s10, adhering a plurality of chips to the counter bores of the substrate through an adhesive, and baking to form a chip layer;
s20, conducting a plurality of chips, and reserving lead layers conducted with the chips;
s30, placing an edge shielding frame on the periphery of the chip layer, mixing fluorescent powder, fluorescent glue and a diluent, spraying and covering the chip layer, taking down the edge shielding frame, baking to form a fluorescent layer, and placing the chip layer in the fluorescent layer;
s40, dispensing packaging glue on the fluorescent layer, baking to form a packaging layer, and placing the chip layer in the packaging layer.
As a preferable scheme of the manufacturing process of the LED integrated light source, the surface of the counter bore is plated with a reflecting layer.
As a preferred scheme of the manufacturing process of the LED integrated light source, a plurality of chips are arranged in a matrix to form a chip group.
As a preferred scheme of the manufacturing process of the LED integrated light source, more than two counter bores are arranged on the substrate, and one chip set is arranged in each counter bore.
As a preferable scheme of the manufacturing process of the LED integrated light source, in S30, after the edge mask frame is removed, white glue is coated between two adjacent chip sets, and the fluorescent layer is formed by baking.
As a preferable scheme of the manufacturing process of the LED integrated light source, the thickness of the fluorescent layer is 50-120 μm.
As a preferable scheme of the manufacturing process of the LED integrated light source, the adhesive is silver glue, and the baking condition in S10 is (170 +/-5) DEG C/1 hr.
As a preferred scheme of the manufacturing process of the LED integrated light source, the fluorescent glue is silica gel, and the baking condition in S30 is (150 +/-5) DEG C/1 hrs.
As a preferred scheme of the manufacturing process of the LED integrated light source, the packaging adhesive is silica gel, and the baking step in S40 is:
baking at 80 + -5 deg.C/1 hr;
then baking at 150 + -5 deg.C/3 hrs.
An LED integrated light source is manufactured by adopting the manufacturing process of the LED integrated light source in any scheme, and comprises the following steps:
a base plate, on which a counter bore is arranged;
the chip layer is arranged in the counter bore and comprises a plurality of chips which are electrically connected with each other, and the chips are adhered in the counter bore;
a lead layer in conduction with the chip;
a fluorescent layer disposed to cover the chip layer;
and the packaging layer is arranged to cover the fluorescent layer.
The invention has the beneficial effects that: the thinner is added between the fluorescent powder and the fluorescent glue to reduce the viscosity of the mixed liquid of the fluorescent powder and the fluorescent glue, so that the content of the fluorescent powder in the mixed liquid of the fluorescent powder and the fluorescent glue is more, and the brightness of the light generated after the light is excited is higher; the powder and glue mixed liquid is placed on the chip in a spraying mode, and compared with a process of dripping the powder and glue mixed liquid, the spraying process can enable the powder and glue mixed liquid to be placed on the chip more uniformly, so that the excitation efficiency of all parts of the chip is the same, and the uniformity of light emission of the LED integrated light source is guaranteed; in addition, the thickness of the fluorescent layer processed by the spraying process is small, when the LED integrated light source is driven by a high-power product or used for a long time and the local temperature rise condition occurs, the risk of glue cracking is reduced, meanwhile, the fluorescent layer is in direct contact with the chip layer, heat dissipation is facilitated, and the service life of the LED integrated light source is prolonged.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings used in the description of the embodiments of the present invention will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the contents of the embodiments of the present invention and the drawings without creative efforts.
FIG. 1 is a cross-sectional view of an LED integrated light source provided by an embodiment of the present invention;
FIG. 2 is a schematic diagram of an LED integrated light source with a plurality of chip sets according to an embodiment of the present invention;
fig. 3 is a schematic diagram of an LED integrated light source and a housing according to an embodiment of the present invention.
In the figure:
1. a substrate; 11. a counter bore; 12. an adhesive; 13. a reflective layer;
21. a chip; 22. an edge mask frame; 24. a chipset;
3. a wiring layer; 31. a wire;
4. a fluorescent layer; 41. white glue;
5. a packaging layer;
6. a housing; 61. binding post, 62, mounting hole.
Detailed Description
In order to make the technical problems solved, technical solutions adopted and technical effects achieved by the present invention clearer, the technical solutions of the embodiments of the present invention will be described in further detail below with reference to the accompanying drawings, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1 to 3, the present embodiment provides an LED integrated light source manufacturing process and an LED integrated light source, where the steps of the LED integrated light source manufacturing process include: s10, bonding a plurality of chips 21 in the counter bores 11 of the substrate 1 through the adhesive 12, and baking to form a chip layer; s20, conducting a plurality of chips 21, and reserving a lead layer 3 which is conducted with the chips 21; s30, placing the edge shielding frame 22 at the periphery of the chip layer, mixing fluorescent powder, fluorescent glue and diluent, spraying and coating the chip layer, taking down the edge shielding frame 22, baking to form a fluorescent layer 4, and placing the chip layer in the fluorescent layer 4; s40, dispensing packaging glue on the fluorescent layer 4, baking to form a packaging layer 5, and placing the chip layer in the packaging layer 5.
The thinner is added between the fluorescent powder and the fluorescent glue to reduce the viscosity of the mixed liquid of the fluorescent powder and the fluorescent glue, so that the content of the fluorescent powder in the mixed liquid of the fluorescent powder and the fluorescent glue is more, and the brightness of the light generated after the light is excited is higher; the powder and glue mixed liquid is placed on the chip 21 in a spraying mode, and compared with a process for dripping the powder and glue mixed liquid, the spraying process can enable the powder and glue mixed liquid to be more uniformly placed on the chip 21, so that the excitation efficiency of all parts of the chip 21 is the same, and the uniformity of light emission of the LED integrated light source is ensured; in addition, the thickness of the fluorescent layer 4 processed by the spraying process is small, when the LED integrated light source is driven by a high-power product or used for a long time, and the local temperature rise condition occurs, the risk of glue cracking is reduced, meanwhile, the fluorescent layer 4 is in direct contact with the chip layer, heat dissipation is facilitated, and the service life of the LED integrated light source is prolonged.
In this embodiment, base plate 1 adopts the copper to make, because copper has better heat conductivity, can in time dispel the heat when LED integrated optical source is driven by high power product or long-term use, avoids heat accumulation damage LED integrated optical source, can improve LED integrated optical source's life. The blue light chip 21 is adopted as the chip 21 to electrically excite the phosphor to generate white light, and of course, a person skilled in the art may select the corresponding chip 21 according to a desired color of light, which is not limited herein.
Furthermore, the surface of the counter bore 11 is plated with a reflective layer 13, and the reflective layer 13 is made of metal with high reflectivity so as to increase the reflectivity of the counter bore 11, reflect light generated after the chip 21 excites the fluorescent powder, and improve the brightness of the LED integrated light source. Alternatively, the reflective layer 13 may be made of silver, which is processed to the surface of the counterbore 11 through an electroplating process, and the silver plating can improve the surface reflectivity of the counterbore 11.
Specifically, the adhesive 12 is silver paste, and the baking condition in S10 is (170 ± 5) ° c/1 hr, so as to ensure good adhesion between the chip 21 and the substrate 1. The silver adhesive has better heat conductivity, can have better adhesion property under the baking condition of 170 ℃/1hr, and realizes the effective connection between the chip 21 and the substrate 1.
Optionally, a plurality of chips 21 are arranged in a matrix to form a chip group 24, which is beneficial to ensuring the uniformity of the light emission of the LED integrated light source. A plurality of chips 21 are connected in series or in parallel by wires 31 to form a lead layer 3, so as to meet the light emitting requirement of the LED integrated light source. The wiring terminals 61 are arranged at two ends of the lead layer 3, so that the LED integrated light source can be conveniently connected into a use circuit. In addition, the wires 31 can be gold wires, which have small resistance and high conductivity and can generate less heat, and the plurality of chips 21 arranged in a matrix can facilitate the arrangement of the wires 31.
Specifically, the mixing ratio of each component in the powder-glue mixed solution can be configured according to the specification requirements of color temperature, high color development and high color gamut of the product, wherein the fluorescent powder can be mixed by more than one fluorescent powder and less than four fluorescent powders, the fluorescent glue can also be mixed by two fluorescent glues as long as the concentration of the powder-glue mixed solution can be ensured for spraying operation, and the specific mixing ratio is not specifically limited herein.
Further, after the fluorescent powder, the fluorescent glue and the diluent are mixed, in order to reduce bubbles in the mixed liquid of the fluorescent powder and the diluent, the mixed liquid of the fluorescent powder and the diluent can be defoamed, and the defoaming operation is the prior art and is not described herein again. The arrangement of the edge shielding frame 22 can effectively reduce the position of spraying the powder glue mixed liquid to the outside of the chip 21, and can reduce the waste of the powder glue mixed liquid.
In this embodiment, the thickness of the fluorescent layer 4 is 50 μm to 120 μm, which not only ensures the brightness of light emission after being excited, but also prevents glue cracking after being heated. The fluorescent glue is silica gel, and the baking condition in S30 is (150 +/-5) DEG C/1 hrs, so as to ensure that the fluorescent glue can be completely cured.
It should be noted that, as shown in fig. 1 and fig. 2, in order to make the brightness of the LED integrated light source higher, more than two counter bores 11 are provided on the substrate 1, and each counter bore 11 is provided with a chip set 24.
For the LED integrated light source with multiple chip sets 24, after the edge shielding frame 22 is removed in S30, white glue 41 is further coated between two adjacent chip sets 24 to divide the different chip sets 24, and baking is performed after the white glue 41 is coated to form the fluorescent layer 4.
Furthermore, the packaging adhesive is silica gel, which can completely cover the lead 31, thereby effectively ensuring the LED integrated light source circuit. And the baking in the S40 adopts segmented baking, and the specific steps are as follows: baking at 80 + -5 deg.C/1 hr; then baking at 150 + -5 deg.C/3 hrs. According to the property of the silica gel, the short-time low-temperature baking can remove air bubbles in the silica gel so as to ensure that the packaging layer 5 has better light transmittance; the long-time high-temperature baking can thoroughly cure the silica gel so as to ensure higher strength.
As shown in fig. 1-3, the present embodiment further discloses an LED integrated light source, which is manufactured by the LED integrated light source manufacturing process according to any of the above schemes, and includes a substrate 1, a chip layer, a lead layer 3, a fluorescent layer 4 and a package layer 5, wherein the substrate 1 is provided with a counterbore 11; the chip layer is arranged in the counter bore 11 and comprises a plurality of chips 21 which are electrically connected with each other, and the chips 21 are adhered in the counter bore 11; the lead layer 3 is conducted with the chip 21; the fluorescent layer 4 is arranged to cover the chip layer; the encapsulation layer 5 is arranged to cover the fluorescent layer 4. The LED integrated light source has high brightness, good uniformity and long service life.
Further, the LED integrated light source further includes a housing 6, and the housing 6 is provided with a connecting terminal 61 electrically connected to the lead terminal, and a mounting hole 62 for facilitating mounting of the LED integrated light source.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. Wherein the terms "first position" and "second position" are two different positions.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.

Claims (10)

1. An LED integrated light source manufacturing process is characterized by comprising the following steps:
s10, bonding a plurality of chips (21) in the counter bores (11) of the substrate (1) through the adhesive (12), and baking to form a chip layer;
s20, conducting a plurality of chips (21), and reserving a lead layer (3) which is conducted with the chips (21);
s30, placing an edge shielding frame (22) at the periphery of the chip layer, mixing fluorescent powder, fluorescent glue and a diluent, spraying and covering the chip layer, taking down the edge shielding frame (22), baking to form a fluorescent layer (4), and placing the chip layer in the fluorescent layer (4);
s40, dispensing packaging glue on the fluorescent layer (4), baking to form a packaging layer (5), and placing the chip layer in the packaging layer (5).
2. The LED integrated light source manufacturing process according to claim 1, wherein the surface of the counter bore (11) is plated with a reflective layer (13).
3. The process for manufacturing an LED integrated light source according to claim 1, wherein a plurality of the chips (21) are arranged in a matrix to form a chip set (24).
4. The manufacturing process of the LED integrated light source as claimed in claim 2, wherein more than two counter bores (11) are arranged on the substrate (1), and each counter bore (11) is internally provided with one chip group (24).
5. The manufacturing process of LED integrated light source as claimed in claim 3, wherein in S30, after the edge mask frame (22) is removed, a white glue (41) is applied between two adjacent chip sets (24) and baked to form the fluorescent layer (4).
6. The manufacturing process of an LED integrated light source according to claim 1, wherein the thickness of the fluorescent layer (4) is 50-120 μm.
7. The manufacturing process of LED integrated light source according to any one of claims 1-6, wherein the adhesive (12) is silver paste, and the baking condition in S10 is (170 ± 5) ° C/1 hrs.
8. The process for manufacturing an LED integrated light source according to any one of claims 1-6, wherein the fluorescent glue is silica gel, and the baking condition in S30 is (150 ± 5) ° C/1 hrs.
9. The manufacturing process of the LED integrated light source as claimed in any one of claims 1 to 6, wherein the packaging adhesive is a silica gel, and the baking step in S40 is:
baking at 80 + -5 deg.C/1 hr;
then baking at 150 + -5 deg.C/3 hrs.
10. An LED integrated light source, which is manufactured by the LED integrated light source manufacturing process according to any one of claims 1 to 9, and comprises:
a base plate (1) provided with a counter bore (11);
the chip layer is arranged in the counter bore (11) and comprises a plurality of chips (21) which are electrically connected with each other, and the chips (21) are adhered in the counter bore (11);
a lead layer (3) that is electrically connected to the chip (21);
a fluorescent layer (4) disposed to cover the chip layer;
and the packaging layer (5) is arranged to cover the fluorescent layer (4).
CN202010921283.9A 2020-09-04 2020-09-04 LED integrated light source manufacturing process and LED integrated light source Pending CN112071972A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113964258A (en) * 2021-10-29 2022-01-21 广东晶科电子股份有限公司 LED packaging structure and manufacturing method thereof

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Application publication date: 20201211