TW200527716A - Package for housing light-emitting element, light-emitting apparatus and illumination apparatus - Google Patents

Package for housing light-emitting element, light-emitting apparatus and illumination apparatus Download PDF

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Publication number
TW200527716A
TW200527716A TW093133106A TW93133106A TW200527716A TW 200527716 A TW200527716 A TW 200527716A TW 093133106 A TW093133106 A TW 093133106A TW 93133106 A TW93133106 A TW 93133106A TW 200527716 A TW200527716 A TW 200527716A
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TW
Taiwan
Prior art keywords
light
emitting element
emitting device
emitting
base body
Prior art date
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TW093133106A
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Chinese (zh)
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TWI245436B (en
Inventor
Mitsugu Uraya
Daisuke Sakumoto
Akira Miyake
Fumiaki Sekine
Mitsuo Yanagisawa
Yuki Mori
Hiroshi Shibayama
Shingo Matsuura
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Kyocera Corp
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Publication date
Priority claimed from JP2004071434A external-priority patent/JP2005210043A/en
Priority claimed from JP2004071430A external-priority patent/JP3921474B2/en
Priority claimed from JP2004071427A external-priority patent/JP4091926B2/en
Priority claimed from JP2004071429A external-priority patent/JP2005210042A/en
Priority claimed from JP2004071433A external-priority patent/JP2005183901A/en
Priority claimed from JP2004275058A external-priority patent/JP2005294796A/en
Application filed by Kyocera Corp filed Critical Kyocera Corp
Publication of TW200527716A publication Critical patent/TW200527716A/en
Application granted granted Critical
Publication of TWI245436B publication Critical patent/TWI245436B/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

A light-emitting apparatus provides a ceramic-made base body, a frame body, a light-emitting element, a conductor layer and a light-transmitting member. The base body has on its upper surface a mounting portion for the light-emitting element. The frame body is joined to the upper surface of the base body so as to surround the mounting portion, with its inner peripheral surface shaped into a reflection surface. The wiring conductor has its one end formed on the upper surface of the base body and electrically connected to the light-emitting element, and has another end led to a side or lower surface of the base body. The light-transmitting member is disposed inside the frame body so as to cover the light-emitting element, which contains fluorescent substances for performing wavelength conversion. The base body is so designed that ceramic crystal grains range in average particle diameter from 1 to 5 μm.

Description

200527716 九、發明說明： 【發明所屬之技術領域】 本發明關於用來收納發光元件的發光元件收納用封裝及 發光裝置以及照明裝置，還關於以螢光體將從發光元件發 光的光進行波長變換並輻射到外部的發光元件收納用封裝 及發光裝置以及照明裝置。 【先前技術】 在圖31中示出用紅色、綠色、藍色及黃色等發出螢光的 多個螢光體（圖中未示出）將從發光二極管（LED)等發光元 件14發光的近紫外光和藍色光等光進行波長變換，進而進 行白色發光的第1先則技術的發光裝置。在圖3 1中，發光裝 置11主要由：絕緣體構成的基體12、框狀的框體13、透光 性構件15和發光元件14構成。基體12在上面的中央部上具 有用來安放發光元件14的安放部12a。在基體12上形成安放 部12a及從其外周將發光裝置的内外電導通的管腳或由金 屬化配線等構成的配線導體（圖中未示出）。框體13黏接固定 在基體12的上面上，形成有上側開口比下側開口還大的貫 通孔13a，並且内周面成爲將從發光元件14發光的光反射的 反射面13b。透光性構件15被填充在框體13的内側，並含有 由從發光元件14發光的光所激勵而進行波長變換的螢光 體。發光元件14被安放固定在安放部12a上。 在圖32中示出用來收納發光二極體（LED)等發光元件25 的第二先前技術的發光元件收納用封裝。在圖32中，發光 元件收納用封裝主要由絕緣體構成的基體21、框狀的反射 95381.doc 200527716 構件22構成。基體21在上面的中央部上具有用來安放發光 元件25的安放部21a。在基體21上，形成有從安放部2U到 基體21的外面而形成的將發光元件收納用封裝的内外電導 通連接的管腳或由金屬化配線等構成的導體層27。反射構 件22黏接固定在基體2 1上面上，且在形成有上側開口比下 侧開口還大的貫通孔22a，並且將内周面作爲反射發光元件 25發光的光的反射面22b。 在該發光元件收納用封裝的安放部21&上安放發光元件 25，並且將發光元件25的電極26電連接在導體層27上，以 在反射構件22的内側覆蓋發光元件25的方式，通過填充含 有激勵發光元件2 5發光的光並進行波長變換的螢光體的透 明構件23而成爲發光裝置20。 該發光裝置20可以用透明構件23所含有的紅色、綠色、 藍色、黃色等多個螢光體對從發光元件25發光的近紫外光 和藍色光進行波長變換，以得到白色光。 在圖33中示出用紅色、綠色、藍色、黃色等多個螢光體 34將從發光二極管（LED)等發光元件35發光的近紫外光和 藍色光等光進行波長變換，進而進行白色發光的第3先前技 術的發光裝置30。在圖33中，發光裝置3〇主要由絕緣體構 成的基體3 1、框狀的反射構件32、透明樹脂33和發光元件 35構成。基體31在上面的中央部上具有用來安放發光元件 35的安放部31a。基體31上形成安放部3丨a及從其外周將發 光裝置的内外電導通連接的管腳或由金屬化配線等構成的 配線導體（圖中未示出）。反射構件32黏接固定在基體31的上 95381.doc 200527716 面上，在形成有上側開口比下側開口還大的貫通孔32a，並 且内周面成爲將發光元件35發光的光反射的反射面32b。透 明树脂33被填充在反射構件32的内部，且含有激勵發光元 件35發光的光並進行波長變換的螢光體34。發光元件35被 安放固定在安放部3 1 a上。 基體12、21、31由氧化鋁材質燒結體（氧化鋁陶瓷）、氮 化鋁材質燒結體、莫來石材質燒結體或玻璃陶瓷等陶瓷或 者環氧樹脂等樹脂構成。在基體丨2、21、3 1由陶瓷構成的 情況下’以高溫在其上面燒結由鎢（W)或鉬（M〇)-錘（Μη)等 構成的金屬膏，以形成配線導體。又，在由樹脂構成基體 12、21、31的情況下，鑄模成型由銅（Cu)或鐵（F☆鎳（见) 合金等構成的管腳，並設置固定在基體12、21、31的内部。 此外，框體13以及反射構件22、32形成爲在形成上側開 口比下側開口還大的貫通孔丨3a、22a、32a，並且在内周面 設置反射光的反射面13b、22b、32b的框狀。具體而言，由 铭（A1)或Fe-Ni-鈷（Co)合金等金屬、氧化鋁陶瓷等陶瓷或者 環氧樹脂等樹脂構成，利用切削加工、鑄模成型或擠壓成 型等成型技術而形成。 又’框體13及反射構件22、32的反射面13b、22b、32b 係通過將貫通孔13a、22a、32a的内周面研磨並平坦化，或 者通過由蒸鍍法或電鍍法將鋁等金屬被覆在貫通孔13a、 22a、32a的内周面上，並作爲能將來之發光元件14、25、 35的光有效反射的構件而形成的。而且，框體13及反射構 件22、32係利用焊錫或銀（Ag)焊料等焊料材料或者樹脂粘 95381.doc 200527716 接材料等接合材料而接合在基體12、21、31上，以便以框 體13及反射構件22、32的内周面包圍安放部i2a、2ia、3h。 在第及第二先前技術中，經由接合線或金屬球等電連 接機構（圖中未示出）及電極36，電連接配置於安放部12&、 31 a外周的配線導體和發光元件14、35，然後通過用分配器 等注入機將含有螢光體的環氧樹脂和矽樹脂等透光性構件 15填充在框體13及反射構件32的内側，以便覆蓋發光元件 14 3 5，並用烘烤爐使其熱固化，從而可以做成可取出利 用螢光體波長變換從發光元件14、35發光的光並具有所希 望的波長光譜的光的發光裝置u、3〇。 在第二先前技術中，發光元件25經由設於發光元件25的 下面的電極26而和配置在安放部21a上的導體層27電連 接。發光π件25的電極和導體層27由焊錫或銀膏（含有銀粒 子的樹脂）等導電性粘接材料28進行接合。 透月構件23由含有螢光體的環氧樹脂和石夕樹脂等透明樹 脂構成，並通過以分配器等注入機填充到反射構件22的内 部中，以便覆蓋發光元件25,以烘烤爐使其熱固化而形成。 由此，可以取出利用螢光體將來自發光元件25的光進行長 波長變換而具有所希望的波長光譜的光。 該發光裝置30，由從外部電路（圖中未示出）供給的電流 電壓使發光元件25啓動，發出可見光，並作爲發光裝置而 使用。其適應範圍係用於各種指示器、光感測器、顯示器、 光耦合器、背光光源和光印刷頭等。 近年來，將上述發光裝置作爲照明用而利用的動向正在 95381.doc 200527716 增加，在輻射強度、放熱特性中要求更高特性的發光裝置。 又，在使用了發光元件的發光裝置中對長壽命性的期待也 不少。 相關技術，有特開2003_37298號公報。 在圖3 1所示的第一先前技術的發光裝置丨丨中，爲了使從 發光元件14發光的光有效地向發光裝置丨丨的外部輻射，例 如以研磨加工使由陶瓷構成的基體12的上面平滑，或在基 體12的上面上形成銀、鋁或金等金屬膜，以使基體12的上 面的反射率提高。但是，在爲使透光性構件丨5的内部含有 螢光體且可波長變換從發光元件14發光的光的發光裝置j i 的情況下，從發光元件14發光的光透過透光性構件15並通 過用基體12的上面進行正反射，從而具有難以激勵正反射 方向以外的螢光體，爲了主要用一部分的螢光體進行波長 變換’波長變換的效率降低，光輸出或亮度、彩色再現性 降低等問題。 又’在基體12由陶瓷構成的情況下，通過由基體丨2吸收 光，從而基體12的上面中的反射率易於降低。其結果，在 發光裝置得不到所希望的光輸出，並且也具有不能得到近 年來所希望的光取出效率的問題。此外，在爲了防止基板 12的光吸收而在基體12的上面上形成金屬膜的情況下，具 有需要利用電鍍或蒸鍍等形成金屬膜，製造工序增多且製 造成本升高的問題。 又’在基體12由環氧樹脂或液晶聚合物等樹脂材料構成 的情況下’由於無法經由基體12將發光元件14發出的熱有 95381.doc -10- 200527716 放也幸田射到外σ卩’故由該熱導致發光元件14的發光效率顯 著降低’其結果，具有發光裝置11的光輸出降低的問題。 進而’在合有用來被覆發光元件14並且將從發光元件14 發光的光進行波長變換的螢光體的透光性構件15中，由於 右想使螢光體的含有率提高且提高波長變換的效率，則從 發光裝置輻射的光易被螢光體妨害，故具有無法提高光輸 出的問題。此外’相反若降低螢光體的含有率，則波長變 換的效率降低’得不到所希望的波長的光，其結果具有無 法提高光輸出的問題。 在圖32中示出的第二先前技術的發光裝置20中，在將發 光疋件25黏接固定在安放部21a的導體層27上時，由於導電 性黏接材料28將導體層27露出擴展等，導電性黏接材料28 的厚度谷易偏離，故存在發光元件25容易以傾斜的狀態接 a的問通。若在發光元件25傾斜的狀態下安放在安放部2 J a 上，則具有難以用反射構件22以所希望的輻射角度使從發 光元件25發光的光反射並向外部良好地出射，從發光裝置 發光的光的輻射強度容易降低的問題。 又，若用來將發光元件25接合固定在導體層27上的導電 性黏接材料28的厚度偏離，則難以使從發光元件25産生的 熱經由導電性黏接材料28及基體21而有效地輻射到外部。 八…果，具有發光元件25的溫度上升，從發光元件25發光 的光的輪射強度谷易降低，無法穩定地維持從發光裝置發 光的光的輻射強度的問題。 進而，通過將用來接合導體層27和發光元件25的導電性 95381.doc 11 200527716 黏接材料28比發光元件25的外周還流出到外側，該流出的 導電性黏接材料28覆蓋基體21的上面，從而易於被流出了 從發光元件25或螢光體發出的光的導電性黏接材料28吸 收，具有容易産生從發光裝置輻射的光的輻射強度的降 低、亮度或彩色再現性的降低的問題。 又，由於用來接合導體層27與發光元件25的導電性黏接 材料28從安放部21a和發光元件25之間露出，故從發光元件 25和螢光體發出的光照射到導電性黏接材料“上。照射到 該導電性黏接材料28上的光一部分容易被導電性黏接材料 28吸收，具有易於産生從發光裝置輻射的光的輻射強度降 低、免度和彩色再現性降低的問題。 又，在從發光元件25發光的光爲紫外光的情況下，若發 光的光照射到導電性黏接材料28上，則導電性黏接材料28 劣化，導體層27與發光元件25的接合強度降低，難以將發 光元件25長期地牢固固定在導體層27上。其結果，具有容 易產生發光元件25的電極26與導體層27斷線等不利現象， 使發光裴置長壽變得困難。 又，近年來期望進一步提高發光裝置的輻射強度。然而， 在第二先前技術的發光裝置中，若爲了提高輻射光強度而 進一步增大輸入到發光元件35的電流值，則具有發光元件 35的發光強度與電流值成正比而不提高，容易產生偏離， 無法得到穩定的輻射強度的問題。 更洋細地5兒，若爲了提高輻射強度而進一步增大輸入到 發光το件35的電流值，則由於發光元件35的接合部溫度（結 95381.doc 200527716 溫）上升，發光元件35的發光效率顯著降低，故具有無法得 到與輸入電流成正比的輻射強度。又，具有由於預測爲起 因於熱的發光波長的偏差而無法得到穩定的輻射強度的問 題0 此外，在含有被覆發光元件35且用來將來自發光元件35 的光進行波長變換的螢光體34的透明樹脂33中，若提高鸯 光體34的含有率，以使波長變換的效率提高，則由於由螢 光體34進行過波長變換的光易被其他螢光體34妨害，故具 有無法提高輻射強度的問題。 又，相反的，若降低螢光體34的含有率，則波長變換的 效率降低，無法得到所希望的波長的光，其結果，具有無 法提高輻射強度的問題。 又，從發光兀件35産生的熱在基體31中傳遞，易於傳遞 到反射構件32,通過反射構件32與基體31的熱膨脹差，^ 射構件32熱膨脹而變形’也具有輕射角度偏離或輕射強度 降低的問題。 【發明内容】 因此，本發明赛於上述問題，其目的在於提供一種在可 提尚螢光體的波長變換效率、提高發光裝置的光輸出，並 且可以使從發光元件發光的光有效地輻射到外部，軸上光 度、亮度及彩色再現性等照明特性優越的發光元件收納用 封裝及發光裝置以及照明裝置。 本：明的其他目的在於，提供—種可以將發光元件的埶 良好地放熱’並長期衫地維持輻射特性的發光元件㈣ 95381.doc 200527716 用封裝及發光裝置以及照明裝置。 本發明之發光元件收納用封裝之特徵在於備有：在上面 形成了發光元件的安放部的包含陶瓷的基體；以圍繞所述 安放部的方式接合在該基體的上面的外周部，並且内周面 作爲反射從所述發光元件發光的光的反射面的框體；一端 形成於所述上面上，與所述發光元件的電極電連接，並且 另一端導出至所述基體的側面或下面的配線導體；及以覆 蓋所述發光元件的方式設置在所述框體的内側，且含有將 所述發光元件發光的光進行波長變換的螢光體的透光性構 件；所述基體的所述陶瓷所含的晶粒的平均粒徑爲1〜5 μηι 〇 本發明之發光裝置之特徵在於備有：所述發光元件收納 用封’’及被女放在所述安放部上且與所述配線導體電連 接的發光元件。 在本發明的特徵在於：所述透光性構件的上面與所述發 光元件的發光部之間的距離爲〇1〜〇.8 mm。 在本發明中，其特徵在於：所述配線導體的所述一端成 爲所述發光元件通過導電性粘接材料電連接的導體層，在 5亥導體層的周圍形成有由絕緣體構成的凸部。 在本發明中，其特徵在於：所述導體層比所述發光元件 的外周還位於内側。 在本發明中，其特徵在於··所述凸部傾斜爲伴隨其側面 朝向基體側而向外側擴展。 在本發明中，其特徵在於：所述配線導體的所述一端成 95381.doc 200527716 爲所述發光元件通過導電性黏接材料而電連接的導體層， 在所述導體層上，在比所述發光元件的外周還位於内側的 上面上形成有凸部。 在本發明中，其特徵在於：所述安放部從所述基體的上 面突出。 在本發明中，其特徵在於：所述突出的安放部傾斜爲伴 隨其側面朝向基體側而向外側擴展。 在本發明中，其特徵在於··所述發光元件的發光部比所 述反射面的下端還位於上侧，所述透光性構件，其上面與 所述發光部之間的距離爲01〜0 5 mm。 在本發明中，其特徵在於：所述透光性構件，其表面的 算術平均粗糙度爲中央部比外周部大。 在本發明中，其特徵在於：所述安放部從基體上面突出， 並且在其上面形成由所述配線導體的所述一端構成且發光 元件通過導電性黏接材料電連接的導體層，在該導體層的 周圍形成有由絕緣體構成的凸部。 在本發明中，其特徵在於··所述導體層比所述發光元件 的外周還位於内側。 在本發明中，其特徵在於：所述凸部傾斜爲伴隨其側面 朝向基體側而向外側擴展。 本發明之發光裝置之特徵在於備有··包含平板狀的陶瓷 的基體，發光元件；與該基體的上面接合，在上側主面的 中央。卩上形成將所述發光元件安放在上面的凸狀安放部， 在上側主面的外周部上形成了圍繞所述安放部且將其内周 95381.doc 200527716 面作爲將所述發光元件發光的光反射的反射面的側壁部的 反射構件；及以覆蓋所述發光元件的方式設置在所述側壁 部的内側，並含有將所述發光元件發光的光進行波長變換 的螢光體的透光性構件；其中所述反射面，位於連接其下 端位於所述發光元件的端部的發光部和所述安放部的上面 及側面之間的角的光路線上，或者比該光路線還位於下 側；所述透光性構件之上面與所述發光部之間的距離爲〇·工 〜〇·5 mm，所述基體中的所述陶瓷所含的晶粒的平均粒徑 爲1〜5 μιη 〇 在本發明中，其特徵在於··所述基體從其上面到外面爲 止形成配線導體；所述反射構件形成有貫通孔，其係在所 述安放部周圍貫通上下主面且位於比所述光路線還下側； 所述發光兀件的電極與所述基體上面的所述配線導體通過 所述貫通孔，由導線電連接著。 在本發明中，其特徵在於：所述貫通孔在其内部填充有 含有了絕緣性的光反射粒子的絕緣性膏，以便與所述反射 構件的上側主面齊平面。 本發明之照明裝置之特徵在於：設置爲使所述發光裝置 成爲規定配置。 根據本發明’由於基體的陶瓷所含的晶粒的平均粒徑爲1 〜5 μιη ’故由於晶粒成爲非常高的密度，所以晶粒間的晶 粒邊界或氣孔非常小，基體表面的晶粒所占的比例增大。 因此，可以有效地抑制從發光元件發光的光進入基體内 。、&尚反射率，其結果可以提高發光裝置的光輸出。 95381.doc -16· 200527716 又，由於利用高密度地佔據基體表面的晶粒而在基體表 面上適度地形成凹凸，故可以使從發光元件發光的光適度 也&反射，使光照射到更多的螢光體上。其結果，可以使 波長變換效率提高，可以提高光輸出或亮度、彩色再現性。 此外’由於由南密度的晶粒構成基體，故可以提高基體 的熱傳導率，發光元件所發出的熱通過基體有效地輻射到 外部’從而可以有效地抑制起因於熱的發光元件的發光效 率的降低。由此，可以抑制發光裝置的光輸出降低。 根據本發明，發光裝置備有··本發明的發光元件收納用 封裝，女放在安放部上且與配線導體電連接的發光元件。 因此，可以有效地反射從發光元件發光的光，使更多的螢 光體激勵，可以成爲光輸出提高，亮度或彩色再現性等照 明特性非常優越的裝置。 根據本發明，較佳者係透光性構件的上面與發光元件的 發光部之間的距離爲〇·1〜〇·8 mm。因此，可以由透光性構 件所含的螢光體高效地波長變換從發光元件發光的光，並 且可以使可有效抑制這些進行過波長變換的光被螢光體妨 害且高效地輻射到透光性構件外部的亮度或彩色再現性等 照明特性非常良好。 根據本發明，所述配線導體的所述一端成爲發光元件通 過導電性黏接材料電連接的導體層，在導體層周圍形成有 由絕緣體構成的凸部。因此，可以由凸部防止導電性黏接 材料流出導體層並擴展，可以使導電性黏接材料的厚度均 句並使發光元件水平地安放在導體層上。其結果，可以從 95381.doc 17 200527716 發光元件以所希望的射出角度發光，可以用框體以所希望 的幸S射角度反射從發光元件發光的光，可以增強從發光裝 置發光的光的輻射強度。 又’通過可以使發光元件水平地安放在導體層上，從而 能使從發光元件産生的熱無偏差、均勻地經由導電性黏接 材料及基體，而有效地輻射到外部。其結果，可以將發光 元件的溫度穩定地一直維持，可以以高狀態將從發光元件 發光的光的輻射強度保持爲穩定。 進而，可以有效地防止從發光元件發光的光通過凸部而 照射到導電性黏接材料，可以有效地防止從發光裝置輻射 的光被導電性黏接材料’產生輻射強度的降低、亮度或彩 色再現性的降低，可以提供輻射強度高、發光特性優越的 發光裝置。 根據本發明，由於導體層比發光元件的外周還位於内 側’故可以防止用來接合導體層與發光元件的導電性黏接 材料從導體層與發光元件之間露出，可以極有效地防止從 發光元件發光的光。其結果，可以防止從發光元件發光的 光被導電性黏接材料吸收或作爲輻射強度低的光而反射， 可以使從發光裝置發光的光的輕射強度成爲高的狀態，並 且使亮度或彩色再現性優越。 又，即使從發光元件發光的光爲紫外線的光，導電性黏 接材料也不會劣化，可以一直使導體層和發光元件的接合 強度高，可以將發光元件長期牢固固定在導體層上。其結 果，可以使發光元件的電極與導體層的電連接長期可靠， 95381.doc -18- 200527716 可以使發光裝置壽命長。 根據本發明’由於傾斜爲伴隨凸部關面朝向基體側而 向外侧擴張凸部的側面與基體的上面的角落的空氣易 於跑出’防止空氣進入該角落部，可以有效地防止在導電 I1生黏接材料及透光性構件上産生空隙，由於溫度變化導致 空隙中的空氣膨脹、産生剝離或裂紋。又，可以以凸部外 側的傾斜的側面使光良好地反射到上側，可以提高發光效 率〇 根據本發明，所述配線導體的所述一端成爲發光元件通 過導電性黏接材料電連接的導體層，在導體層±，在比發 光元件的外周還位於内側的上面上形成有凸部。因此，由 凸部將發光元件提高到比導體層還上側，可以在發光元件 的下面和導體層的上面之間確實地設置間隙:。由此，導電 性黏接材料由發光元件的重量而按壓流動，露出導體層並 擴展，可以在導體層上將導電性黏接材料形成爲均勻的厚 度，使發光元件水平地安放在導體層上。其結果，可以使 從發光元件以所希望的射出角度發光，用框體使從發光元 件發光的光以所希望的輻射角度反射並向外部射出，增強 從發光裝置發光的光的輻射強度。 又，通過可以在導體層上將導電性黏接材料形成爲均勻 的厚度，使發光元件水平地安放在導體層上，從㊉能夠使 從發光元件產生的熱經由導電性黏接材料及基體並有效輻 射到外部。其結果’可以將發光元件的溫度一直保持爲穩 定，在南的狀態下將從發光元件發光的光的輻射強度穩定 95381.doc -19- 200527716 地維持。 可以有效地防止導電性黏接材料流出到比發光元件 的外周還外側的位置，在發光元件的下側保持，可以有效 也防止從發光元件發光的光被流出到比發光元件的外周還 外側的導電性黏接材料。其結果，可以提高輕射強度高且 党度和彩色再現性等光特性優越的發光裝置。 根據本發明，由於安放部爲突出著的，故安放部與反射 構件的下鳊可罪地絕緣。因此，從平面看，可以使框體的 下端更接近安放部，可以用框體的反射面更好地反射從發 光元件發光的光。 根據本發明，由於傾斜爲伴隨凸出的安放部的側面朝向 基體側而向外側擴張，故可以使從發光元件産生的熱的擴 散性提高，並且可以利用突出的安放部的側面，有效地使 光向上方反射。其結果，可以使發光元件的發光效率及螢 光體的波長變換效率提高，並且可以使從發光元件或營光 體發出的光有效地向上方反射，能夠長期地以高輕射強度 輸出光。 根據本發明，由於發光元件的發光部比反射面的下端還 位於上側，且透過性構件的上面與發光部之間的距離爲〇 ^ 〜0.5 mm，故可以使從發光元件發出的光中、不會被反射 面反射而直接從框體的上侧開口輻射的光成爲非常高的強 度。即’由發光元件的發光部上侧的恒定厚度的透光性構 件所含螢光體高效地對從發光元件發出的光進行波長變 換，可以使那些波長變換過的光不會被螢光體妨宝 ^ o ^ \Tl> IS1 95381.doc -20- 200527716 接放出到透光性構件的外部 的輻射強度且得到良好的軸 光特性。 。其結果，可以提高發光裝置 上光度或亮度、彩色再現性等 丨便攸發光元件產生的熱向基體傳導，也會由於安 放部突出’可以有效地抑制安放部與框體之間增：且突出 的基體和透光性構件的接觸面積增大，放熱性提高，熱向 框體傳遞。其結果’可以有效抑制由框體與基體的熱膨服 差而導致框體變形。200527716 IX. Description of the invention: [Technical field to which the invention belongs] The present invention relates to a light-emitting element housing package, a light-emitting device, and a lighting device for accommodating light-emitting elements, and also relates to wavelength conversion of light emitted from the light-emitting element by a phosphor. A light-emitting element housing package, a light-emitting device, and a lighting device that are radiated to the outside. [Prior Art] FIG. 31 shows a plurality of phosphors (not shown in the figure) that emit fluorescent light with red, green, blue, yellow, and the like, which emit light from a light emitting element 14 such as a light emitting diode (LED). The first prior art light emitting device that performs wavelength conversion of light such as ultraviolet light and blue light, and further performs white light emission. In FIG. 31, the light-emitting device 11 is mainly composed of a base body 12 made of an insulator, a frame-shaped frame body 13, a light-transmitting member 15, and a light-emitting element 14. The base body 12 has a mounting portion 12a for mounting the light-emitting element 14 on the upper center portion. On the base body 12, a mounting portion 12a and a pin for electrically conducting the inside and outside of the light-emitting device from the outer periphery thereof or a wiring conductor (not shown) made of metallized wiring or the like are formed. The frame body 13 is adhered and fixed to the upper surface of the base body 12, and a through-hole 13a having an upper opening larger than a lower opening is formed. The inner peripheral surface is a reflecting surface 13b that reflects light emitted from the light emitting element 14. The light-transmitting member 15 is filled inside the frame 13 and contains a phosphor which is excited by light emitted from the light-emitting element 14 and performs wavelength conversion. The light-emitting element 14 is fixed on the mounting portion 12a. FIG. 32 shows a light emitting element storage package of the second prior art for storing light emitting elements 25 such as light emitting diodes (LEDs). In FIG. 32, the light-emitting element housing package is mainly composed of a base 21 made of an insulator and a frame-shaped reflection 95381.doc 200527716 member 22. The base body 21 has a mounting portion 21a for mounting the light emitting element 25 on the upper center portion. The base body 21 is formed with a pin that electrically connects the inside and outside of the light-emitting element storage package and a conductive layer 27 made of metallized wiring and the like formed from the mounting portion 2U to the outside of the base body 21. The reflection member 22 is adhered and fixed on the upper surface of the base 21, and a through hole 22a having an opening larger than that on the lower side is formed, and an inner peripheral surface is used as a reflection surface 22b for reflecting light emitted from the light emitting element 25. A light-emitting element 25 is placed on the mounting portion 21 & of the light-emitting element housing package, and the electrode 26 of the light-emitting element 25 is electrically connected to the conductor layer 27 so as to cover the light-emitting element 25 on the inside of the reflection member 22 by filling. The transparent member 23 containing a phosphor that excites light emitted by the light-emitting element 25 and performs wavelength conversion becomes the light-emitting device 20. This light-emitting device 20 can convert the near-ultraviolet light and blue light emitted from the light-emitting element 25 by a plurality of phosphors including red, green, blue, and yellow included in the transparent member 23 to obtain white light. FIG. 33 shows that a plurality of phosphors 34 such as red, green, blue, and yellow are used to perform wavelength conversion of light such as near-ultraviolet light and blue light emitted from a light emitting element 35 such as a light emitting diode (LED), thereby performing white A third prior art light emitting device 30 that emits light. In Fig. 33, the light-emitting device 30 is mainly composed of a base body 31 made of an insulator, a frame-shaped reflection member 32, a transparent resin 33, and a light-emitting element 35. The base body 31 has a mounting portion 31a for mounting the light-emitting element 35 on the upper center portion. The base 31 has a mounting portion 3a and a pin that electrically connects the inside and outside of the light-emitting device from the outer periphery thereof, or a wiring conductor (not shown) made of metalized wiring or the like. The reflecting member 32 is adhered and fixed to the upper 95381.doc 200527716 surface of the base 31, and a through hole 32a having an opening larger than that of the lower side is formed, and the inner peripheral surface is a reflecting surface that reflects light emitted from the light emitting element 35. 32b. The transparent resin 33 is filled in the reflection member 32 and contains a phosphor 34 that excites the light emitted by the light emitting element 35 and performs wavelength conversion. The light emitting element 35 is fixed to the mounting portion 3 1 a. The substrates 12, 21, and 31 are made of alumina sintered body (alumina ceramic), aluminum nitride sintered body, mullite sintered body, ceramic such as glass ceramic, or resin such as epoxy resin. In the case where the substrates 2, 2, and 31 are made of ceramics, a metal paste composed of tungsten (W) or molybdenum (Mo) -hammer (Mn) or the like is sintered thereon at a high temperature to form a wiring conductor. When the substrates 12, 21, and 31 are made of resin, pins made of copper (Cu) or iron (F ☆ nickel (see) alloy, etc.) are formed in a mold, and fixed to the substrates 12, 21, and 31. In addition, the frame body 13 and the reflection members 22 and 32 are formed so as to form through holes 3a, 22a, and 32a having an upper opening larger than the lower opening, and reflection surfaces 13b, 22b, and The frame shape of 32b. Specifically, it is made of metal such as Ming (A1) or Fe-Ni-Cobalt (Co) alloy, ceramics such as alumina ceramics, or resins such as epoxy resin, and is processed by cutting, molding or extrusion. It is formed by a molding technique. The reflection surfaces 13b, 22b, and 32b of the frame body 13 and the reflection members 22 and 32 are formed by polishing and flattening the inner peripheral surfaces of the through holes 13a, 22a, and 32a, or by a vapor deposition method. A metal such as aluminum is coated on the inner peripheral surfaces of the through holes 13a, 22a, and 32a by electroplating, and is formed as a member that can effectively reflect the light of the future light emitting elements 14, 25, and 35. Further, the frame body 13 and The reflecting members 22 and 32 are made of a solder material such as solder or silver (Ag) solder or Resin adhesive 95381.doc 200527716 Bonding materials such as bonding materials are bonded to the bases 12, 21, 31 so that the housings i2a, 2ia, 3h are surrounded by the inner peripheral surfaces of the frame 13 and the reflective members 22, 32. In the prior art, an electrical connection mechanism (not shown in the figure) such as a bonding wire or a metal ball and the electrode 36 are used to electrically connect the wiring conductors and the light emitting elements 14 and 35 disposed on the outer periphery of the placement sections 12 & 31 a, and then through A translucent member 15 such as epoxy resin and silicone resin containing a phosphor is filled inside the frame 13 and the reflective member 32 with an injection machine such as a dispenser so as to cover the light-emitting elements 14 3 5 and is made in a baking oven. By heat curing, a light emitting device u, 30 which can take out the light emitted from the light emitting elements 14, 35 by phosphor wavelength conversion and has a desired wavelength spectrum can be made. In the second prior art, the light emitting element 25 is electrically connected to the conductive layer 27 disposed on the mounting portion 21a through an electrode 26 provided on the lower surface of the light emitting element 25. The electrode and the conductive layer 27 of the light emitting π member 25 are made of solder or silver paste (resin containing silver particles), etc. Conductive bonding The material 28 is bonded. The translucent member 23 is made of a transparent resin such as epoxy resin containing a phosphor and a stone resin, and is filled into the inside of the reflective member 22 by an injection machine such as a dispenser so as to cover the light emitting element 25, It is formed by thermal curing in a baking oven. Thereby, light having a desired wavelength spectrum can be extracted by using a phosphor to convert light from the light emitting element 25 to a long wavelength. The light emitting device 30 is formed by an external circuit. (Not shown in the figure) The supplied current voltage activates the light emitting element 25, emits visible light, and is used as a light emitting device. Its applicable range is used for various indicators, light sensors, displays, optocouplers, backlight sources and optical print heads. In recent years, the trend of using the above-mentioned light-emitting devices for lighting is increasing at 95381.doc 200527716, and light-emitting devices with higher characteristics in terms of radiation intensity and heat radiation characteristics are required. Moreover, in a light-emitting device using a light-emitting element, long life expectancy is also expected. Related technologies include JP 2003-37298. In the first prior art light-emitting device shown in FIG. 31, in order to efficiently radiate light emitted from the light-emitting element 14 to the outside of the light-emitting device, the substrate 12 made of ceramic is polished, for example, by grinding. The upper surface is smooth, or a metal film such as silver, aluminum, or gold is formed on the upper surface of the base 12 to increase the reflectance of the upper surface of the base 12. However, in the case of a light-emitting device ji that contains a phosphor inside the light-transmitting member 5 and can wavelength-convert light emitted from the light-emitting element 14, the light emitted from the light-emitting element 14 passes through the light-transmitting member 15 and By performing specular reflection on the upper surface of the substrate 12, it is difficult to excite phosphors in directions other than the specular reflection direction. In order to perform wavelength conversion mainly with a part of phosphors, the efficiency of wavelength conversion is reduced, and light output, brightness, and color reproducibility are reduced And other issues. When the base body 12 is made of ceramics, light is absorbed by the base body 2 and the reflectance on the upper surface of the base body 12 tends to decrease. As a result, a desired light output cannot be obtained in the light-emitting device, and there is a problem that a desired light extraction efficiency cannot be obtained in recent years. In addition, in the case where a metal film is formed on the upper surface of the base 12 in order to prevent light absorption of the substrate 12, there is a problem that it is necessary to form a metal film by electroplating, vapor deposition, or the like. Also, when the base body 12 is made of a resin material such as an epoxy resin or a liquid crystal polymer, the heat emitted from the light-emitting element 14 cannot be transmitted through the base body 95381.doc -10- 200527716. Therefore, this heat significantly reduces the light-emitting efficiency of the light-emitting element 14. As a result, there is a problem that the light output of the light-emitting device 11 decreases. Furthermore, in the light-transmitting member 15 that includes a phosphor for covering the light-emitting element 14 and performing wavelength conversion of light emitted from the light-emitting element 14, the right side is intended to increase the phosphor content and increase the wavelength conversion. Efficiency, since the light radiated from the light emitting device is easily obstructed by the phosphor, there is a problem that the light output cannot be improved. In addition, "conversely, if the content of the phosphor is decreased, the efficiency of the wavelength conversion is reduced", and light of a desired wavelength cannot be obtained. As a result, there is a problem that the light output cannot be increased. In the light emitting device 20 of the second prior art shown in FIG. 32, when the light emitting element 25 is adhered and fixed to the conductor layer 27 of the mounting portion 21a, the conductive layer 27 is exposed and expanded due to the conductive adhesive material 28 For example, since the thickness valley of the conductive adhesive material 28 is likely to deviate, there is a problem that the light emitting element 25 is easily connected to a in an inclined state. When the light-emitting element 25 is placed on the mounting portion 2 J a with the light-emitting element 25 inclined, it is difficult to reflect the light emitted from the light-emitting element 25 with the reflective member 22 at a desired radiation angle and to emit the light well to the outside. The problem is that the radiant intensity of the emitted light is likely to decrease. In addition, if the thickness of the conductive adhesive material 28 used to bond and fix the light-emitting element 25 to the conductor layer 27 deviates, it is difficult to efficiently generate heat from the light-emitting element 25 through the conductive adhesive material 28 and the substrate 21. Radiation to the outside. In other words, there is a problem that the temperature of the light-emitting element 25 rises, and the trough intensity valley of the light emitted from the light-emitting element 25 tends to decrease, so that the radiation intensity of the light emitted from the light-emitting device cannot be stably maintained. Furthermore, the conductive 95381.doc 11 200527716 adhesive material 28 for bonding the conductive layer 27 and the light emitting element 25 flows out to the outside than the outer periphery of the light emitting element 25, and the discharged conductive adhesive material 28 covers the substrate 21 As a result, it is easily absorbed by the conductive adhesive material 28 flowing out of the light emitted from the light-emitting element 25 or the phosphor, and has a reduction in the radiation intensity of light radiated from the light-emitting device and a reduction in brightness or color reproducibility. problem. In addition, since the conductive adhesive material 28 for bonding the conductor layer 27 and the light-emitting element 25 is exposed between the mounting portion 21a and the light-emitting element 25, light emitted from the light-emitting element 25 and the phosphor is radiated to the conductive adhesive. Material ". A part of the light irradiated onto the conductive adhesive material 28 is easily absorbed by the conductive adhesive material 28, and there is a problem that the radiation intensity of light radiated from the light-emitting device is easily reduced, the immunity and the color reproducibility are reduced. When the light emitted from the light-emitting element 25 is ultraviolet light, if the light-emitting light is irradiated onto the conductive adhesive material 28, the conductive adhesive material 28 is deteriorated, and the bonding between the conductive layer 27 and the light-emitting element 25 is performed. The strength is reduced, and it is difficult to firmly fix the light-emitting element 25 to the conductor layer 27 for a long period of time. As a result, disadvantages such as disconnection between the electrode 26 of the light-emitting element 25 and the conductor layer 27 are prone to occur, which makes it difficult to make the light-emitting element long-lived. In recent years, it has been desired to further increase the radiation intensity of the light-emitting device. However, in the light-emitting device of the second prior art, in order to further increase the intensity of the radiation light, The current value of the light element 35 has the problem that the light emission intensity of the light emitting element 35 is not proportional to the current value, and it is easy to produce deviations, and the stable radiation intensity cannot be obtained. More specifically, if the radiation intensity is increased, If the current value input to the light emitting element 35 is further increased, the junction temperature (junction 95381.doc 200527716 temperature) of the light emitting element 35 increases, and the luminous efficiency of the light emitting element 35 is significantly reduced. Therefore, it is impossible to obtain a ratio proportional to the input current. In addition, there is a problem that a stable radiation intensity cannot be obtained due to a deviation in the light emission wavelength due to heat. In addition, the light emission element 35 is covered with a light emitting element 35 and is used for wavelength conversion of light from the light emitting element 35. In the transparent resin 33 of the phosphor 34, if the content of the phosphor 34 is increased to improve the efficiency of wavelength conversion, the light that has undergone wavelength conversion by the phosphor 34 is easily obstructed by other phosphors 34. Therefore, there is a problem that the radiation intensity cannot be increased. Conversely, if the content ratio of the phosphor 34 is decreased, the efficiency of wavelength conversion is reduced, However, as a result, light having a desired wavelength cannot be obtained. As a result, the radiation intensity cannot be improved. In addition, the heat generated from the light-emitting element 35 is transmitted to the base 31 and easily transmitted to the reflective member 32. The reflective member 32 and the base 31 pass The thermal expansion difference of ^, the thermal expansion and deformation of the radiation member 32 also has the problems of deviation of light emission angle or reduction of light emission intensity. [Summary of the Invention] Therefore, the present invention overcomes the above problems, and its object is to provide a fluorescent light that can be improved. The wavelength conversion efficiency of the body and the light output of the light-emitting device can be improved, and the light emitted from the light-emitting element can be effectively radiated to the outside. Another object of the present invention is to provide a light-emitting element that can radiate heat of a light-emitting element well and maintain radiation characteristics for a long period of time. 95381.doc 200527716 A package, a light-emitting device, and a lighting device. The package for accommodating a light-emitting element according to the present invention includes: a ceramic-containing base body on which a mounting portion of a light-emitting element is formed; an outer peripheral portion joined to the upper surface of the base body so as to surround the mounting portion; The surface is a frame that reflects the light emitted from the light-emitting element; one end is formed on the upper surface, is electrically connected to the electrode of the light-emitting element, and the other end is led out to the side or lower wiring of the base. A conductor; a light-transmitting member provided on the inside of the housing so as to cover the light-emitting element, and containing a phosphor that performs wavelength conversion of light emitted by the light-emitting element; the ceramic of the substrate The average particle diameter of the contained crystal grains is 1 to 5 μηι. The light-emitting device of the present invention is characterized by including: the light-emitting element housing seal, and a female being placed on the mounting portion and connected to the wiring. A light-emitting element to which a conductor is electrically connected. The present invention is characterized in that the distance between the upper surface of the light-transmitting member and the light-emitting portion of the light-emitting element is 0.001 to 0.8 mm. In the present invention, the one end of the wiring conductor is a conductor layer in which the light emitting element is electrically connected by a conductive adhesive material, and a convex portion made of an insulator is formed around the conductor layer. In the present invention, the conductor layer is located further inside than the outer periphery of the light emitting element. The present invention is characterized in that the convex portion is inclined to expand outward as its side surface faces the base body side. In the present invention, the one end of the wiring conductor is 95381.doc 200527716, which is a conductor layer in which the light-emitting element is electrically connected through a conductive adhesive material. A convex portion is formed on an upper surface of an outer periphery of the light-emitting element. In the present invention, the placement portion is protruded from an upper surface of the base body. In the present invention, the protruding mounting portion is inclined so as to expand outward as its side faces toward the base side. In the present invention, the light-emitting part of the light-emitting element is located on an upper side than a lower end of the reflective surface, and the distance between the upper surface of the light-transmitting member and the light-emitting part is 01 to 0 5 mm. In the present invention, the light-transmitting member has an arithmetic average roughness on a surface of which is larger in a central portion than in a peripheral portion. In the present invention, the mounting portion is protruded from the upper surface of the substrate, and a conductor layer composed of the one end of the wiring conductor and a light-emitting element electrically connected by a conductive adhesive material is formed on the mounting portion. A convex portion made of an insulator is formed around the conductor layer. In the present invention, the conductive layer is located on the inner side of the outer periphery of the light emitting element. In the present invention, the convex portion is inclined so as to expand outward as the side surface faces the base body side. The light-emitting device of the present invention is characterized by including a base body including a plate-shaped ceramic and a light-emitting element; the base body is bonded to the upper surface of the base body and is located at the center of the upper main surface. A convex-shaped placing portion on which the light-emitting element is placed is formed on the ridge, and an outer peripheral portion of the upper main surface is formed around the placing portion and an inner periphery of 95381.doc 200527716 is used as the light-emitting element. A reflecting member on a side wall portion of a reflecting surface on which light is reflected; and a light-transmitting phosphor that is provided inside the side wall portion so as to cover the light-emitting element and includes a wavelength conversion of light emitted by the light-emitting element Wherein the reflecting surface is located on the light path connecting the corners between the light emitting part whose lower end is located at the end of the light emitting element and the upper and side surfaces of the mounting part, or is located on the lower side than the light path ; The distance between the upper surface of the light-transmitting member and the light-emitting portion is 0. 5 ~ 5 mm, and the average particle diameter of the crystal grains contained in the ceramic in the substrate is 1 to 5 μm 〇In the present invention, the base body is formed with a wiring conductor from the upper surface to the outer surface; the reflective member is formed with a through hole that penetrates the upper and lower main surfaces around the mounting portion and is located above the main portion. The light path is also on the lower side; the electrode of the light-emitting element and the wiring conductor on the base are electrically connected by a wire through the through hole. In the present invention, the through hole is filled with an insulating paste containing insulating light reflecting particles so as to be flush with the upper main surface of the reflecting member. The lighting device of the present invention is characterized in that the lighting device is provided in a predetermined arrangement. According to the present invention, since the average grain size of crystal grains contained in the ceramic of the substrate is 1 to 5 μm, the crystal grains have a very high density, so the grain boundaries or pores between the crystal grains are very small, and the crystals on the surface of the substrate are very small. The proportion of grains increases. Therefore, the light emitted from the light emitting element can be effectively suppressed from entering the substrate. &Amp; Still reflectance, as a result, the light output of the light emitting device can be improved. 95381.doc -16 · 200527716 In addition, due to the high-density occupation of crystal grains on the surface of the substrate, unevenness is appropriately formed on the surface of the substrate, so that the light emitted from the light-emitting element can be moderately & reflected, so that the light is illuminated more Many phosphors. As a result, the wavelength conversion efficiency can be improved, and the light output, brightness, and color reproducibility can be improved. In addition, since the matrix is composed of grains having a south density, the thermal conductivity of the matrix can be improved, and the heat emitted from the light-emitting element is effectively radiated to the outside through the matrix, thereby effectively suppressing the decrease in the luminous efficiency of the light-emitting element due to heat. . This can suppress a reduction in the light output of the light emitting device. According to the present invention, the light-emitting device is provided with the light-emitting element housing package of the present invention, and the light-emitting element is placed on the mounting portion and is electrically connected to the wiring conductor. Therefore, it is possible to effectively reflect the light emitted from the light-emitting element and excite more phosphors, and it is possible to improve the light output, and the device has excellent lighting characteristics such as brightness and color reproducibility. According to the present invention, the distance between the upper surface of the light-transmitting member and the light-emitting portion of the light-emitting element is preferably from 0.1 mm to 0.8 mm. Therefore, the light emitted from the light-emitting element can be efficiently wavelength-converted by the phosphor contained in the light-transmitting member, and it is possible to effectively suppress these wavelength-converted light from being hindered by the phosphor and efficiently radiating the light. Illumination characteristics such as brightness and color reproducibility outside the sexual member are very good. According to the present invention, the one end of the wiring conductor is a conductor layer in which the light emitting element is electrically connected by a conductive adhesive material, and a convex portion made of an insulator is formed around the conductor layer. Therefore, the convex portion can prevent the conductive adhesive material from flowing out of the conductive layer and spread, and the thickness of the conductive adhesive material can be uniformed and the light-emitting element can be horizontally placed on the conductive layer. As a result, the light emitting element can emit light at a desired emission angle from 95381.doc 17 200527716, and the light emitted from the light emitting element can be reflected by the frame at a desired emission angle, and the radiation of the light emitted from the light emitting device can be enhanced. strength. Furthermore, the light-emitting element can be horizontally placed on the conductor layer, so that the heat generated from the light-emitting element can be uniformly radiated to the outside through the conductive adhesive material and the substrate without deviation. As a result, the temperature of the light-emitting element can be stably maintained at all times, and the radiation intensity of light emitted from the light-emitting element can be kept stable in a high state. Furthermore, it is possible to effectively prevent the light emitted from the light-emitting element from being irradiated to the conductive adhesive material through the convex portion, and it is possible to effectively prevent the light emitted from the light-emitting device from being reduced in radiation intensity, brightness, or color by the conductive adhesive material. A decrease in reproducibility can provide a light-emitting device with high radiation intensity and excellent light-emitting characteristics. According to the present invention, since the conductor layer is located inside than the outer periphery of the light-emitting element, the conductive adhesive material used to join the conductor layer and the light-emitting element can be prevented from being exposed between the conductor layer and the light-emitting element. Element glowing light. As a result, the light emitted from the light emitting element can be prevented from being absorbed by the conductive adhesive material or reflected as light with low radiation intensity. The light emission intensity of the light emitted from the light emitting device can be made high, and the brightness or color can be improved. Excellent reproducibility. In addition, even if the light emitted from the light emitting element is ultraviolet light, the conductive adhesive material does not deteriorate, and the bonding strength between the conductive layer and the light emitting element can be always high, and the light emitting element can be firmly fixed to the conductive layer for a long time. As a result, the electrical connection between the electrode of the light-emitting element and the conductor layer can be made reliable for a long time, and 95381.doc -18- 200527716 can make the light-emitting device have a long life. According to the present invention, “the air is inclined to run out as the side of the convex portion and the corner of the upper surface of the base are expanded as the convex portion closes to the base side and expands outward. Preventing air from entering this corner portion can effectively prevent Voids are generated in the adhesive material and the light-transmitting member, and air in the voids expands due to temperature changes, causing peeling or cracking. In addition, the inclined side surface outside the convex portion can reflect light to the upper side well, and the light emitting efficiency can be improved. According to the present invention, the one end of the wiring conductor becomes a conductor layer where the light emitting element is electrically connected by a conductive adhesive material. In the conductor layer ±, a convex portion is formed on the upper surface located on the inner side than the outer periphery of the light emitting element. Therefore, the light-emitting element is raised above the conductive layer by the convex portion, and a gap can be surely provided between the lower surface of the light-emitting element and the upper surface of the conductive layer. Thereby, the conductive adhesive material is pressed and flowed by the weight of the light emitting element, and the conductive layer is exposed and expanded. The conductive adhesive material can be formed on the conductor layer to have a uniform thickness, and the light emitting element can be horizontally placed on the conductor layer. . As a result, light can be emitted from the light emitting element at a desired emission angle, and the light emitted from the light emitting element can be reflected at a desired radiation angle with a frame and emitted to the outside, thereby increasing the radiation intensity of the light emitted from the light emitting device. In addition, by forming the conductive adhesive material with a uniform thickness on the conductor layer, the light-emitting element can be horizontally placed on the conductor layer, so that the heat generated from the light-emitting element can be passed through the conductive adhesive material and the substrate. Effective radiation to the outside. As a result, the temperature of the light-emitting element can be kept constant, and the radiation intensity of the light emitted from the light-emitting element can be stably maintained in the south state 95381.doc -19- 200527716. It can effectively prevent the conductive adhesive material from flowing out to a position outside the outer periphery of the light-emitting element, and can be held under the light-emitting element. It can also effectively prevent light emitted from the light-emitting element from flowing out to the outer side of the light-emitting element. Conductive bonding material. As a result, it is possible to improve a light-emitting device having a high light emission intensity and excellent light characteristics such as power and color reproducibility. According to the present invention, since the mounting portion is protruding, the mounting portion is guiltyly insulated from the chin of the reflecting member. Therefore, when viewed from a plane, the lower end of the frame can be brought closer to the mounting portion, and the light emitted from the light emitting element can be better reflected by the reflecting surface of the frame. According to the present invention, since the side surface of the mounting portion that is inclined is expanded outward toward the base side, the heat diffusivity generated from the light-emitting element can be improved, and the side surface of the protruding mounting portion can be effectively used. The light is reflected upwards. As a result, the luminous efficiency of the light-emitting element and the wavelength conversion efficiency of the phosphor can be improved, and the light emitted from the light-emitting element or the phosphor can be effectively reflected upward, and light can be output at a high light emission intensity for a long period of time. According to the present invention, the light-emitting portion of the light-emitting element is located on the upper side than the lower end of the reflective surface, and the distance between the upper surface of the transmissive member and the light-emitting portion is 0 to 0.5 mm. The light radiated directly from the upper opening of the frame without being reflected by the reflecting surface becomes a very high intensity. In other words, the phosphors contained in the light-transmitting member with a constant thickness above the light-emitting part of the light-emitting element efficiently perform wavelength conversion on the light emitted from the light-emitting element, so that those wavelength-converted light will not be emitted by the phosphor.宝宝 ^ o ^ \ Tl > IS1 95381.doc -20- 200527716 The radiation intensity emitted to the outside of the light-transmitting member and good axial light characteristics are obtained. . As a result, the lightness, brightness, and color reproducibility of the light-emitting device can be improved. The heat generated by the light-emitting element can be transmitted to the substrate, and the protruding portion of the mounting portion can effectively suppress the increase between the mounting portion and the frame. The contact area between the substrate and the light-transmitting member is increased, the heat radiation is improved, and heat is transmitted to the frame. As a result, it is possible to effectively suppress the deformation of the frame caused by the difference in thermal expansion between the frame and the base.

根據本^明’由於透光性構件的表面的算術平均粗縫度 在中央部比外周部還大，故可以抑制從透光性構件的中央 邛和外周部射出的光的輻射強度的差。即，可以使從發光 元件發光且不會被框體等反射，直接從透紐構件表面的 中央部II射強度大的光’由透純構件表面的中央部的粗 才k面適度地散射，將光強度減弱一些。由此，從高強度高 的透光性構件素面的中央部輻射的光由框體反射，可以使 具興從強度減小的透光性構件的外周部輻射的光的強度近 似，可以減小透光性構件的中央部與外周部的輻射強度的 差。其結果’發光裝置可以在廣泛的範圍内輻射光，可以 抑制通過向發光面的一部分集中輻射強度而産生的、給予 人眼強烈刺激的眩光等現象，可以抑制對人眼的壞影響。 根據本發明，在所述安放部從基體上面突出，並且在其 上面形成由所述配線導體的所述一端構成、發光元件通過 導電性黏接材料電連接的導體層，在導體層周圍形成有由 絕緣體構成的凸部。因此，可以使從發光元件的側面向橫 95381.doc 21 200527716 向或斜下方發光的光良好地反射到框體的反射面，不會被 . 框體與基體的接合部或基體的表面吸收，可以用框體^所 ， 希望的輻射角度反射，並向外部良好地輻射。其結果，可 以將從發光裝置發光的關的輻射強度穩定地保持爲高。 又，由於安放部突出，故安放部和反射構件的下端可以 可靠地絕緣。因此，從平面看’可以將框體的下端更靠近 安放部’可以用框體的反射面更良好地反射從發光元件發 光的光。 又，可以利用由絕緣體構成的凸部防止導電性黏接材料· 漏出並擴散，可以使導電性黏接材料的厚度均勻，使發光 疋件水平地安放在導體層上。其結果，使從發光元件以所 希望的輻射強度#光，τ以用㈣以所希望的輻射強度反 射從發光元件發光的光並向外部輻射，可以使從發光裝置 發光的光的輻射強度增強。 又，可以使發光元件水平地安放在導體層上，從而能夠 使從發光7G件産生的熱無偏差地均勾地經由導電性黏接# 料及基體’而有效地輻射到外部。其結果，可以將發光元 件的溫度-直穩定地保持，以高的狀態穩定地維持從發光 元件發出的光。 此外，可以有效地防止發光元件發光的光由凸部而照射 到導電性黏接材料上，可以有效地防止從發光裝置輻射的 光被導電性黏接材料吸收，而産生輕射強度的降低、亮度^ 或毛色再現性的降低’可以提供輕射強度高且發光特性優、 越的發光裝置。 9538l.d〇( -22- 200527716 根據本發明，由於導體層比發光元件的外周還位於内 側，故可以防止用來接合導體層和發光元件的導電性黏接 材料從導體層與發光元件露出，可以極有效地防止從發光 元件發光的光照射到導電性黏接材料上。其結果，可以防 止從發光元件發光的光被導電性黏接材料吸收或作爲輻射 強度低的光而反射，可以使從發光裝置發光的光的輻射強 度爲高狀態，並且亮度或彩色再現性優越。 又，即使從發光元件發光的光爲紫外光，導電性黏接材 料也不會劣化，可以使導體層與發光元件的接合強度一直 非常高，可以將發光元件長期牢固地固定在導體層上。其 結果，可以使發光元件與導體層的電連接長期可靠，可以 使發光裝置耐用。 根據本發明，由於傾斜爲凸部的側面朝向基體側而向外 側擴張，故凸部的側面與基體的上面的角落的空氣易於跑 出，防止空氣進入該角落部，可以有效地防止在導電性黏 接材料及透光性構件上産生空隙，由於溫度變化導致空隙 中的空氣膨脹、産生剝離或裂紋。又，可以以凸部外側的 傾斜的側面使光良好地反射到上側，可以提高發光效率。 根據本發明，發光裝置備有：由平板狀的陶瓷構成的基 體，發光元件，與該基體的上面接合，在上側主面的中央 部上形成將所述發光元件安放在上面的凸狀安放部，在上 側主面的外周部上形成了圍繞所述安放部且將其内周面作 爲將所述發光元件發光的光反射的反射面的側壁部的反射 構件；以覆蓋所述發光元件的方式設置在所述側壁部的内 95381.doc •23 - 200527716 側’並含有將所述發光元件發光的光進行波長變換的螢光 體的透光性構件。反射面係位於連接下端位於所述發光元 件的端部的發光部和所述安放部的上面及側面之間的角的 光路線上，或者比該光路線還位於下側。透光性構件之上 面與所述發光部之間的距離爲〇 · 1〜〇 · 5 mm。因此，可以使 從發光元件發出的光中、不會被反射面反射而直接從發光 元件輻射到上侧的光的強度非常高。即，利用比發光元件 的發光部更上側的恒定厚度的透光性構件所含的螢光體高 效地將從發光元件發出的光進行波長變換，可以使這些波 長、菱換過的光不會被螢光體妨害，直接放出到透光性構件 的外部。其結果，可以提高發光裝置的輻射強度，使軸上 光度或亮度、彩色再現性等光特性良好。 又’從發光元件産生的熱，容易從一體化的安放部傳遞 到側壁部，特別在反射構件由金屬構成的情況下，熱迅速 地被傳遞到側壁部，並且從側壁部的外側面向外部良好地 轄射。因此，可以利用基體與反射構件的熱膨脹差有效地 抑制反射構件變形，可以將輻射光的光特性長期維持良好。 又’由於反射面位於連接其下端位於所述發光元件的端 邛的發光部和所述安放部的上面及侧面之間的角的光路線 上，或者比该光路線還位於下侧，故可以用反射面有效地 反射從發光元件向橫向或下側方向發光的直接光，可以使 輻射光強度極高。 根據本發明，基體從其上面到外面形成了配線導體，反 射構件形成在安放部的周圍貫通上下主面間且比光路線還 95381.doc 200527716 位於下側的貫通孔，發光元件的電極與基體上面的配線導 體通過貫通孔而由導線電連接。因此，從發光元件發光的 直接光在比用來通過設於反射構件上的導線的貫通孔還上 側的位置上由反射面反射，可以有效地防止直接光進入貫 通孔内而被吸收，以提高輻射光強度。 此外，可以使發光元件的下面和反射構件的安放部完全 接合，可以將發光元件的熱良好地向反射構件傳遞，進一 步提高放熱性。 又，通過使陶瓷所含的晶粒的平均粒徑爲丨〜5 ，提高 基體的反射率，從而可以有效抑制光從用來通過形成於反 射構件的引線的貫通孔漏出並被基體吸收。 根據本發明，在貫通孔的内部填充有含有絕緣性光反射 粒子的絕緣性膏，以便與反射構件的上側主面齊平面。因 此，即使從發光元件或螢光體發出的光進入貫通孔，也可 以有光反射離子向上側有效地反射，可以使發光裝置的輻 射強度或軸上光度或亮度、彩色再現性等光特性良好。 根據本發明，因爲照明裝置設置爲使所述本發明的發光 裝置成爲規定的配置，所以利用由半導體構成的發光元件 的電子再結合産生的發光，可以做成能夠比現有的利用放 電的照明裝置還低消耗電力且耐用的小型照明裝置。其結 果，可以抑制從發光元件産生的光的中心波長的變動，可 以以長期穩定的輻射光強度與輻射光角度（配光分佈）照射 光，並且可以做成抑制照射面中的顏色不均或照度分佈偏 離的照明裝置。 95381.doc •25- 200527716 此外，通過在將本發明的發光裝置作爲光源設置爲規定 配置，並且在這些發光裝置的周圍設置光學設計爲任意形 狀的反射工具或光學透鏡、光擴散板等，可以作成輻射任 意的配光分佈的光的照明裝置。 【實施方式】 以下參照附圖，詳細說明本發明的較佳實施例。 以下詳細說明本發明的發光元件收納用封裝（以下也稱 爲封裝）及發光裝置。圖1係表示本發明的第一實施方式的 發光裝置41的剖面圖。發光裝置41主要由基體42、框體43、 發光元件44和含有螢光體（圖中未示出）的透光性構件仏構 成。此種發光裝置41可以將從發光元件44發光的光輸出到 外部。According to the present invention, since the arithmetic average shirring degree on the surface of the light-transmitting member is larger in the central portion than in the outer peripheral portion, it is possible to suppress the difference in radiation intensity of light emitted from the center of the light-transmitting member and the outer peripheral portion. That is, it is possible to emit light from a light-emitting element without being reflected by a frame or the like, and to directly emit light having a high intensity directly from the central portion II of the surface of the transparent member. The coarse k-plane of the central portion of the surface of the transparent member is appropriately scattered. Reduce the light intensity. Accordingly, the light radiated from the central portion of the plain surface of the high-intensity and light-transmitting member is reflected by the frame, and the intensity of the light radiated from the outer peripheral portion of the light-transmitting member with reduced intensity can be approximated, and the intensity can be reduced. The difference in radiation intensity between the central portion and the outer peripheral portion of the translucent member. As a result, the light-emitting device can radiate light over a wide range, can suppress glare and the like that are generated by concentrating radiant intensity on a part of the light-emitting surface, and give a strong stimulus to the human eye, and can suppress bad effects on the human eye. According to the present invention, a conductor layer composed of the one end of the wiring conductor and a light-emitting element electrically connected by a conductive adhesive material is formed on the placement portion protruding from the upper surface of the base body, and a conductor layer is formed around the conductor layer. A convex portion made of an insulator. Therefore, the light emitted from the side of the light emitting element to the horizontal 95381.doc 21 200527716 can be well reflected to the reflecting surface of the frame, and will not be absorbed by the joint between the frame and the base or the surface of the base. It can be reflected at the desired radiation angle with the frame, and radiate well to the outside. As a result, the intensity of the radiation emitted from the light emitting device can be stably maintained high. In addition, since the mounting portion protrudes, the lower end of the mounting portion and the reflecting member can be reliably insulated. Therefore, when viewed from a plane, 'the lower end of the frame can be closer to the mounting portion', the light emitted from the light-emitting element can be more well reflected by the reflection surface of the frame. In addition, the convex portion made of an insulator can prevent the conductive adhesive material from leaking out and spread. The thickness of the conductive adhesive material can be made uniform, and the light emitting element can be horizontally placed on the conductive layer. As a result, the light emitted from the light-emitting element is emitted at a desired radiation intensity #, and τ is used to reflect the light emitted from the light-emitting element at a desired radiation intensity and to be radiated to the outside, thereby increasing the radiation intensity of the light emitted from the light-emitting device. . In addition, the light-emitting element can be horizontally placed on the conductor layer, so that the heat generated from the light-emitting 7G element can be uniformly radiated to the outside through the conductive adhesive material and the substrate 'without deviation. As a result, the temperature of the light-emitting element can be stably maintained, and the light emitted from the light-emitting element can be stably maintained in a high state. In addition, it is possible to effectively prevent the light emitted from the light-emitting element from being irradiated onto the conductive adhesive material through the convex portion, and it is possible to effectively prevent light radiated from the light-emitting device from being absorbed by the conductive adhesive material, thereby reducing light emission intensity, A decrease in brightness or fur color reproducibility can provide a light emitting device with high light emission intensity and excellent light emission characteristics. 9538l.d〇 (-22- 200527716 According to the present invention, since the conductor layer is located on the inner side than the outer periphery of the light emitting element, the conductive adhesive material used to join the conductor layer and the light emitting element can be prevented from being exposed from the conductor layer and the light emitting element. It is extremely effective to prevent the light emitted from the light-emitting element from being irradiated onto the conductive adhesive material. As a result, it is possible to prevent the light emitted from the light-emitting element from being absorbed by the conductive adhesive material or reflected as light with low radiation intensity. The light emitted from the light-emitting device has a high radiation intensity and excellent brightness or color reproducibility. Moreover, even if the light emitted from the light-emitting element is ultraviolet light, the conductive adhesive material is not deteriorated, and the conductive layer and the light can be emitted. The bonding strength of the elements has always been very high, and the light-emitting element can be firmly fixed to the conductor layer for a long time. As a result, the electrical connection between the light-emitting element and the conductor layer can be reliable for a long time, and the light-emitting device can be made durable. According to the present invention, since the tilt is The side of the convex part expands outward toward the base body side, so the air of the side of the convex part and the upper corner of the base body It is easy to run out and prevent air from entering the corner, which can effectively prevent voids from being formed in the conductive adhesive material and the light-transmitting member. The air in the voids expands due to temperature changes, causing peeling or cracking. According to the present invention, a light-emitting device is provided with a base body made of a flat plate-shaped ceramic, and a light-emitting element is bonded to the upper surface of the base body. A convex mounting portion for mounting the light emitting element on the upper surface is formed in a central portion of the surface, and an outer peripheral portion of the upper main surface is formed to surround the mounting portion and use an inner peripheral surface thereof as light for emitting the light emitting element. A reflecting member on a side wall portion of a reflective reflecting surface; provided on the inner side of the side wall portion so as to cover the light-emitting element 95381.doc • 23-200527716 side, and includes a wavelength-converted light that emits light from the light-emitting element A light-transmitting member of a phosphor. The reflecting surface is located on the upper side of the light-emitting part and the mounting part which are connected to the light-emitting element at the lower end. The light path at the angle between the side faces is located on the lower side than the light path. The distance between the upper surface of the light-transmitting member and the light-emitting portion is 0. 1 to 0. 5 mm. Of the light emitted from the element, the intensity of the light radiated directly from the light-emitting element to the upper side without being reflected by the reflecting surface is very high. That is, the light-transmitting member with a constant thickness higher than the light-emitting portion of the light-emitting element is used. The phosphor efficiently converts the wavelength of the light emitted from the light-emitting element, so that the light emitted by these wavelengths and diamonds can be directly emitted to the outside of the light-transmitting member without being hindered by the phosphor. As a result, the light emission can be improved. The radiation intensity of the device makes the optical characteristics such as brightness, brightness, and color reproducibility on the axis good. Also, the heat generated from the light-emitting element is easily transmitted from the integrated mounting portion to the side wall portion, especially when the reflection member is made of metal. Next, heat is quickly transferred to the side wall portion, and is well radiated from the outside of the side wall portion to the outside. Therefore, it is possible to effectively suppress the deformation of the reflecting member by utilizing the thermal expansion difference between the base body and the reflecting member, and it is possible to maintain the optical characteristics of the radiated light for a long period of time. Also, since the reflecting surface is located on the light path connecting the corners between the light-emitting part whose lower end is located at the end of the light-emitting element and the upper and side surfaces of the mounting part, or is located on the lower side than the light path, it can be used The reflecting surface effectively reflects the direct light that is emitted from the light emitting element in the lateral or lower direction, and can make the intensity of the radiated light extremely high. According to the present invention, a wiring conductor is formed from the upper surface to the outer surface of the base body, and a reflecting member is formed around the mounting portion and penetrates between the upper and lower main surfaces and is more than a light path. 95381.doc 200527716 The electrode and the base body of the light-emitting element The upper wiring conductor is electrically connected by a lead wire through a through hole. Therefore, the direct light emitted from the light-emitting element is reflected by the reflecting surface at a position higher than the through-hole used to pass through the conductive wire provided on the reflective member, which can effectively prevent the direct light from being absorbed into the through-hole and absorbed, thereby improving Radiation light intensity. In addition, the lower surface of the light-emitting element and the mounting portion of the reflecting member can be completely joined, and the heat of the light-emitting element can be well transmitted to the reflecting member, thereby further improving heat dissipation. Furthermore, by setting the average particle size of the crystal grains contained in the ceramic to 5 to 5 to increase the reflectance of the substrate, light can be effectively prevented from leaking out of the through-holes for passing through the leads formed in the reflective member and absorbed by the substrate. According to the present invention, the inside of the through hole is filled with an insulating paste containing insulating light reflecting particles so as to be flush with the upper main surface of the reflecting member. Therefore, even if the light emitted from the light emitting element or the phosphor enters the through hole, light reflecting ions can be effectively reflected to the upper side, and the light characteristics such as the radiation intensity, on-axis luminosity or brightness, and color reproducibility can be made good. . According to the present invention, since the lighting device is provided so that the light-emitting device of the present invention has a predetermined configuration, light emission generated by electron recombination of a light-emitting element composed of a semiconductor can be made into a lighting device capable of discharging compared with a conventional one. It is also a small and durable lighting device with low power consumption. As a result, variations in the central wavelength of light generated from the light-emitting element can be suppressed, and light can be irradiated with long-term stable radiation light intensity and radiation light angle (light distribution), and it can be made to suppress color unevenness on the irradiation surface or Illumination device with uneven illumination distribution. 95381.doc • 25- 200527716 In addition, by setting the light-emitting devices of the present invention as a light source in a predetermined configuration, and surrounding the light-emitting devices, a reflection tool, an optical lens, a light diffusion plate, or the like which is optically designed to have an arbitrary shape can be provided. An illumination device that emits light with an arbitrary light distribution. [Embodiment] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. Hereinafter, the light-emitting element storage package (hereinafter also referred to as a package) and the light-emitting device of the present invention will be described in detail. Fig. 1 is a sectional view showing a light emitting device 41 according to a first embodiment of the present invention. The light-emitting device 41 is mainly composed of a base body 42, a frame body 43, a light-emitting element 44, and a light-transmitting member 含有 containing a phosphor (not shown). Such a light emitting device 41 can output light emitted from the light emitting element 44 to the outside.

本發明的封裝備有：基體42、框體43、配線導體（圖中未 示出）和透光性構件45。基體42在上面形成發光元件44的安 放部42a，且由陶瓷構成。框體43以圍繞安放部42&的方式 接合在該基體42的上面外周部上，並且内周面作爲反射從 發光元件44發光的光的反射面。配線導體，—端形成於基 體42的上面上並與發光元件44的電極電連接，並且另一端 導出至基體42的側面或下面。透光性構件45設置爲在框體 43的内側覆蓋發光元件44，且含有將從發光元件料發光的 光進行波長變換的螢光體。 石材質燒結體或玻璃陶瓷等陶瓷組成 支撐發光元件44的支撐構件發揮作用 基體42由氧化鋁材質燒結體 氮化鋁材質燒結體、莫來 的絕緣體構成，作爲 ’在其上面具有安放 95381.doc -26- 200527716 發光元件44的安放部42&。 又，基體42的陶瓷的晶粒的平均粒徑爲1〜5 μιη。由此， 由於晶粒成爲非常高的密度，故基體42表面的晶粒所占比 例增大’由於可以有效地抑制從晶粒間進入基體42内部的 光’基體42上面的反射率提高，故可以提高發光裝置“的 光輸出。 "進而’基體42的上面的算術平均粗糙度成爲可以將從發 光元件44發光的光在基體42的上面向全方向反射的適度的 大小。其結果’由在框體43的内周面反射的光被激勵而發 光的螢光體的數量增加，可以提高發光裝置41的光輸出或 亮度、彩色再現性。 而且，在陶瓷的晶粒的平均粒徑比5 大的情況下，基 體42表面的晶粒所占比例減小，從晶粒間進入基體42内部 的光增加，基體42上面的反射率容易降低。其結果，從發 光元件44發光的光或從螢光體發光的光不能有效地被基體 42的上面反射，發光裝置41的光輸出容易降低。又，在陶 瓷的晶粒的平均粒徑比1 μιη小的情況下，基體42上面的算 術平均粗糙度減小，從發光元件44發光的光在基體42的上 面谷易正反射，難以向全方向反射。其結果，正反射方向 以外的螢光體難以被激勵，主要係位於正反射方向的螢光 體有助於波長變換，波長變換的效率降低，發光裝置41的 光輸出容易降低。 又，由於基體42的陶瓷的晶粒的平均粒徑爲i〜5 μιη，故 基體42的熱傳導性南的晶粒的密度升高，基體a的熱傳導 95381.doc -27- 200527716 率提高，發光元件44發出的熱能夠通過基體42而有效的輕 射到外部。因此’由於可以抑制起因於熱的發光元件4 4的 發光效率的降低，可以有效地抑制發光裝置4丨的光輸出的 降低。 在安放部42a上形成有用來電連接發光元件44的配線導 體（圖中未示出）。該配線導體借助於形成於基體42内部的配 線層（圖中未示出）而導出到發光裝置41的外表面，借助於焊 料材料或金屬制的導線等連接到外部電路基板上，電連接 發光元件44與外部電路。 將發光元件44連接到配線導體的方法有：使用借助於Au 線或A1線等導線連接的引線接合方式；或者將形成於發光 元件44下面的電極通過使用了 Au-錫（Sn)焊錫、Sn-Ag焊 錫、Sn-Ag_Cu焊錫或Sn-錯（Pb)等的焊錫突起、或使用7Au 或Ag等金屬的金屬突起構成的連接機構連接倒裝式接合方 式等方法。較佳者係利用倒裝式接合方式進行連接。由此， 由於可以將配線導體設置在基體42上面的發光元件44的正 下方’故沒有必要在基體42上面的發光元件44的外周部設 置配線導體的區域。由此，可以有效地抑制從發光元件44 發光的光被该基體42的配線導體區域吸收，以降低輻射的 光輸出。 配線導體由W、Mo、Mu、Cu或Ag等金屬粉末組成的金 屬化層構成，形成於基體42的表面或内部。或者，也可以 通過將Fe-Ni-Co合金等的管腳埋設在基體42中而形成。 又，也可以通過使由已形成配線導體的絕緣體構成的輸入 95381.doc -28- 200527716 輸出端子與設於基體42的貫通孔嵌入接合而設置。 此外，較佳者係以1〜2〇μηι的厚度使沁或Au等耐腐蝕性 優越的金屬被覆在配線導體的露出表面上。由此，可以有 效地防止配線導體的氧化腐蝕，並且可以使發光元件4 ^與 配線導體連接牢固。因&，較佳者係利用電解電鍍或無電 解電鍍法依次將例如厚度丨〜1〇 μιη左右的Ni電鍍層和厚度 0-1〜3 μιη左右的Au電鍍層被覆在配線導體的露出表面上。 又，利用焊錫或Ag焊料等焊料材料或者環氧樹脂等黏接 劑的接合材料，使框體43安裝在基體42的上面上。進而， 框體43形成有上側開口比下側開口還大的貫通孔&，且在 内周面具有可以以高反射率反射從發光元件44發光的光的 ^射面43b。形成此種内周面的方法，例如根據切削加工或 鑄模成型等，係用A卜Ag、AU、白金（pt)、鈦（Ti)、鉻（Cr) 或Cu等高反射率金屬形成框體43，利用電解研磨或化學研 磨等研磨加工將其内周面平滑化，以作爲反射面。又，也 可以用耐氣候性或耐濕性優越的Cu_w合金或sus(不銹鋼） 合金形成框體43,利用A卜Ag或八11等的金屬電鍍或者蒸鍍 等在該内周面上形成金屬薄膜。而且，在内周面由Ag4Cu 等因氧化而容易變色的金屬構成的情況下，可以在其表面 上被覆從糸外區域到可見光區域透光率優越、低熔點玻 璃、溶膠_凝膠玻璃、錢脂或環氧樹脂，&此，可以使框 體43的内周面的财腐姓性、耐藥品性或耐氣候性提高。 又，較佳者係框體43的内周面的表面算術平均粗糙度Ra 爲1 μηι以下。由此，可以將從發光元件44發光的光良好 95381.doc -29- 200527716 地向發光裝置的上側反射。在Ra超過〇1 ^㈤的情況下，難 ， 以用框體43的内周面將從發光元件44發光的光良好地向發 光裝置的上側反射，並且在發光裝置4丨的内部容易漫反 射。其結果，發光裝置4 1内部的光的損耗易於增大，難以 用所希望的反射角度向發光裝置41的外部輻射光。 本發明的透光性構件45較佳者係由和發光元件44的折射 率差小、相對於從紫外區域到可見光區域的光透過率高的 材料構成。例如，透光性構件45由矽樹脂、環氧樹脂或尿 素樹脂等透明樹脂或者低熔點玻璃或溶膠_凝膠玻璃等構 ® 成。由此’可以有效地抑制由發光元件44與透光性構件45 的折射率差導致光的反射損耗産生，可以提供以高效率和 所希望的輻射強度或角度分佈向發光裝置41的外部輻射光 的發光裝置41。又，此種透光性構件45由分配器等注入機 填充在框體43的内側並用烘烤爐等熱固化而形成，以便覆 蓋發光元件44。 此外，由於透光性構件45以任意比例配合、填充利用被 . 從發光το件44發光的光激勵的螢光體中的電子的再結合而 發光爲藍色、紅色、綠色或黃色等的無機類螢光體，故可 以輸出具有所希望的發光光譜和顏色的光。 又，較佳者係將透光性構件45設置爲其上面與發光元件 44的發光部46之間的距離成爲〇1〜〇8 mm。由此，在由發 光元件44的發光部46上側的恒定厚度的透光性構件45所含-的螢光體將從發光元件44發光的光高效地進行波長變化，， 並且可以有效地抑制那些波長變換過的光被螢光體妨害， 95381.doc -30 - 200527716 可以有效地向透光性構件45的外部輕射。其結果，在提高 ’X光裝置41的光輸出’並且可以使亮度及彩色再現性等照 明特性良好。 而且，在發光το件44的發光部46與透光性構件45的上面 的間隔X(參照圖1)比G.8 mm長的情況下，螢光體中鄰近發 光το件44的雖然可以良好地波長變換從發光元件料發光的 光，但難以有效地將該波長變換過的光放出到透光性構件 45的外部。即，通過由透光性構件45上面附近的螢光體妨 害波長變換過的光的進行，從而難以使光向外部的輻射良 好。 另一方面，在發光元件44的發光部46與透光性構件45的 表面的間隔比0.1 mm小的情況下，由從發光元件44發光的 光照射而激勵的螢光體的數量減少，難以有效地進行波長 變換。由此，沒有進行波長變換而透過透光性構件45的視 感性低的波長的光增多，難以使光輸出或亮度、彩色再現 性等照明特性良好。 此外，發光元件44，雖然輻射的能量的峰值波長可以是 從紫外線區域到紅外線區域的任一個，但從使白色光或各 種顏色的光視感性好地放出的觀點來看，較佳者係以從300 〜5 00 nm的近紫外系到藍色系發光的元件。例如，列舉在 藍寶石襯底上依次層疊了緩衝層、n型層、發光層及p型層 的、用GaN、GaAIN、InGaN或InGaAIN等氮化鎵系化合物 半導體或者碳化矽系化合物半導體或ZnSe(硒化鋅）等形成 了發光層的元件。 95381.doc -31 - 200527716 圖2係表示第二貫施方式的發光裝置5〇的剖面圖。發光裝 置50主要由基體51、作爲框體的反射構件52、透光性構件 53、導體層57和凸部59構成。 本發明的發光元件收納用封裝備有基體51、框狀的反射 構件52和導體層57。基體51在上面的中央部上具有發光元 件55的安放部51a。反射構件52在基體51的上面的外周部上 包圍女放部51a而设置的。導體層57形成於安放部5 1&上。 發光元件55通過導電性黏接材料8，與導體層57電連接。導 體層5 7在比發光元件5 5的外周還位於外側的上面上形成有 凸部59。而且，在該封裝中設置配線導體。配線導體的一 、形成於基體51的上面上並與發光元件55的電極電連接， 並且另一端向基體51的側面或下面導出。即，配線導體的 一端作爲導體層57。 本發明的基體5 1由氧化鋁陶瓷或氮化鋁材質燒結體、莫 來石材質燒結體或玻璃陶瓷等陶瓷或者環氧樹脂等樹脂構 成。基體51在上面具有安放發光元件55的安放部51&。又， 在基體51由陶瓷構成的情況下，與本發明的第一實施方式 同樣，陶瓷的晶粒的平均粒徑較佳者係爲1〜5 μιη。 在安放部5 la上形成有在將發光元件55安放固定在基體 51上’並且發光元件55電連接的導體層57。該導體層”通 過形成於基體51内部的配線層（圖中未示出）而向發光裝置 5〇的外表面導出。通過使該發光裝置5〇外表面的導出部與 外部電路基板連接，從而發光元件55與外部電路電連接。 在基體51由陶瓷構成的情況下，以高溫燒結成爲導體層 95381.doc -32- 200527716 57的由W、Mo-Mn、Cu、Ag等構成的金屬膏而在基體51上 面上形成導體層57。又，在基體51由樹脂構成的情況下， 鑄模成型Cii或Fe_Ni合金等構成的管腳並設置固定在基體 5 1的内部。 凸部59在導體層57上設於比發光元件55的外周還位於内 侧的上面。凸部59可以是導電性材料，也可以是絕緣性材 料。在凸部59由絕緣性的陶瓷構成的情況下，例如通過印 刷塗敷以形成基體51的材料爲主要成分的陶瓷膏，與成爲 導體層57的同時在高溫燒結而形成。又，在基體51由樹脂 構成的情況下，例如凸部59由和基體5 1相同的材質構成， 與基體5 1同時利用模具成型形成。 又’在凸部59爲導電性材料的情況下，可以通過在導體 層57的上面印刷塗敷金屬膏並燒結，或者通過用切削加工 等在管腳上設置突出部，而做成。 如此，導體層57在比發光元件55的外周還位於内側的上 面上形成有凸部59。因此，由凸部59將發光元件5 5提升得 比導體層57還上側，可以在發光元件55的下面與導體層57 的上面之間可靠地設置間隙。由此，可以防止導電性黏接 材料58由發光元件55的重量而被壓漏出，漏出導體層57而 擴散，可以將導電性黏接材料58均勻地形成於導體層57 上，使發光元件55水平地安放在導體層57上。其結果，可 以使可從發光元件55以所希望的射出角度發光、從發光元 件55發光的光由反射構件52以所希望的輻射角度反射，並 向外部射出，而從發光裝置發光的光的輻射強度增強。 95381.doc -33- 200527716 又，通過可以將導電性黏接材料58均句地形成於導體層 57上，使發光元件55水平地安放在導體層57上，從而也能 夠使從發光元件55産生的熱經由導電性黏接材料“及基體 51而有效地輻射到外部。其結果，可以將發光元件55的溫 度一直保持穩定，將從發光元件55發光的光的輻射強度2 高的狀態下保持穩定。The package of the present invention includes a base body 42, a frame body 43, a wiring conductor (not shown), and a light-transmitting member 45. The base 42 has a mounting portion 42a on which the light emitting element 44 is formed, and is made of ceramic. The frame 43 is joined to the outer peripheral portion of the upper surface of the base 42 so as to surround the mounting portion 42, and the inner peripheral surface serves as a reflecting surface that reflects light emitted from the light emitting element 44. The wiring conductor has one end formed on the upper surface of the base body 42 and electrically connected to the electrode of the light-emitting element 44, and the other end is led out to the side or the lower surface of the base body 42. The light-transmitting member 45 is provided so as to cover the light-emitting element 44 on the inside of the frame 43 and contains a phosphor that performs wavelength conversion of light emitted from the light-emitting element material. A sintered body made of stone material, glass ceramics, or other ceramic components are used to support the light-emitting element 44. The support body 42 is composed of an alumina sintered body, an aluminum nitride sintered body, and a Mullite insulator. -26- 200527716 Mounting section 42 & of light emitting element 44. The average grain size of the crystal grains of the ceramics of the base 42 is 1 to 5 μm. As a result, since the crystal grains have a very high density, the proportion of the crystal grains on the surface of the substrate 42 is increased. 'Because the light entering from the crystal grains into the interior of the substrate 42 can be effectively suppressed', the reflectance on the substrate 42 is increased, so The light output of the light-emitting device can be increased. &Quot; Furthermore, the arithmetic average roughness of the upper surface of the base body 42 becomes a moderate size capable of reflecting the light emitted from the light-emitting element 44 on the upper surface of the base body 42 in all directions. Increasing the number of phosphors that are excited by the light reflected on the inner peripheral surface of the frame 43 can increase the light output, brightness, and color reproducibility of the light-emitting device 41. In addition, the average particle size ratio of the crystal grains in the ceramics When the thickness is larger, the proportion of crystal grains on the surface of the substrate 42 decreases, and light entering from the crystal grains into the substrate 42 increases, and the reflectance on the substrate 42 tends to decrease. As a result, light emitted from the light emitting element 44 or The light emitted from the phosphor cannot be effectively reflected by the upper surface of the substrate 42, and the light output of the light-emitting device 41 is likely to be reduced. In addition, when the average particle size of the crystal grains of the ceramic is smaller than 1 μm The arithmetic average roughness on the base 42 is reduced, and the light emitted from the light emitting element 44 is easily reflected in the valley above the base 42 and is difficult to be reflected in all directions. As a result, phosphors other than the direction of the regular reflection are difficult to be excited, mainly located in The phosphor in the direction of regular reflection contributes to wavelength conversion, the efficiency of wavelength conversion decreases, and the light output of the light-emitting device 41 tends to decrease. Moreover, since the average grain size of the crystal grains of the ceramics of the substrate 42 is i ~ 5 μm, The density of the thermal conductivity of the south crystal grains of 42 increases, and the thermal conductivity of the substrate a is increased by 95381.doc -27- 200527716, and the heat emitted by the light emitting element 44 can be effectively radiated to the outside through the substrate 42. Therefore, 'because it can be suppressed The decrease in the luminous efficiency of the light-emitting element 44 due to the heat can effectively suppress the decrease in the light output of the light-emitting device 4. A wiring conductor (not shown in the figure) for connecting the light-emitting element 44 by an incoming call is formed on the mounting portion 42a. The wiring conductor is led out to the outer surface of the light-emitting device 41 by a wiring layer (not shown in the figure) formed inside the base body 42 and a solder material is used. A metal wire or the like is connected to an external circuit board, and the light-emitting element 44 is electrically connected to the external circuit. The method of connecting the light-emitting element 44 to the wiring conductor is to use a wire bonding method using a wire such as an Au wire or an A1 wire; or The electrodes formed under the light-emitting element 44 are solder bumps such as Au-tin (Sn) solder, Sn-Ag solder, Sn-Ag_Cu solder, or Sn-fault (Pb), or a metal using a metal such as 7Au or Ag The connection mechanism formed by the protrusion is connected to the flip-chip bonding method and the like. Preferably, the connection is performed by the flip-chip bonding method. Therefore, since the wiring conductor can be disposed directly below the light-emitting element 44 on the base body 42, there is no such thing. It is necessary to provide a region of a wiring conductor on the outer peripheral portion of the light emitting element 44 on the upper surface of the base body 42. Thereby, the light emitted from the light-emitting element 44 can be effectively suppressed from being absorbed by the wiring conductor region of the base body 42 to reduce the radiated light output. The wiring conductor is made of a metallized layer composed of metal powder such as W, Mo, Mu, Cu, or Ag, and is formed on the surface or inside of the base 42. Alternatively, it may be formed by embedding pins such as Fe-Ni-Co alloy in the base 42. Alternatively, the input terminal 95381.doc -28- 200527716 formed of an insulator having a wiring conductor formed therein may be provided by insert-bonding the through-hole provided in the base 42. In addition, it is preferable that the exposed surface of the wiring conductor is coated with a metal having excellent corrosion resistance such as Qin or Au with a thickness of 1 to 20 μm. This can effectively prevent the oxidative corrosion of the wiring conductor, and can firmly connect the light emitting element 4 to the wiring conductor. Because of &, it is preferable to use electrolytic plating or non-electrolytic plating method to sequentially cover, for example, a Ni plating layer having a thickness of about 10 to 10 μm and an Au plating layer having a thickness of about 0 to 3 μm to the exposed surface of the wiring conductor. on. The frame 43 is mounted on the upper surface of the base 42 using a solder material such as solder or Ag solder or a bonding material such as an adhesive such as epoxy resin. Furthermore, the housing 43 is formed with a through hole & having an upper opening larger than the lower opening, and has a light emitting surface 43b on the inner peripheral surface that can reflect light emitted from the light emitting element 44 with a high reflectance. A method of forming such an inner peripheral surface is, for example, a frame made of a high-reflectivity metal such as Ag, AU, platinum (pt), titanium (Ti), chromium (Cr), or Cu, for example, by cutting or molding. 43. The inner peripheral surface is smoothed by using a polishing process such as electrolytic polishing or chemical polishing as a reflective surface. In addition, the frame 43 may be formed of a Cu_w alloy or a sus (stainless steel) alloy having excellent weather resistance and moisture resistance, and metal may be formed on the inner peripheral surface by electroplating or vapor deposition of a metal such as Alb or Ag 11 film. In addition, when the inner peripheral surface is made of a metal that easily discolors due to oxidation, such as Ag4Cu, the surface can be coated with excellent light transmittance from the outer region to the visible light region, low-melting glass, sol_gel glass, and money. It is possible to improve the property, chemical resistance, or weather resistance of the inner peripheral surface of the frame 43 by using an epoxy resin or an epoxy resin. The surface arithmetic average roughness Ra of the inner peripheral surface of the frame 43 is preferably 1 μm or less. As a result, the light emitted from the light emitting element 44 can be reflected toward the upper side of the light emitting device with a good 95381.doc -29- 200527716. When Ra exceeds 〇1 ^ 难, it is difficult to reflect the light emitted from the light-emitting element 44 to the upper side of the light-emitting device with the inner peripheral surface of the frame 43 well, and it is easy to diffuse the reflection inside the light-emitting device 4 . As a result, the loss of light inside the light emitting device 41 tends to increase, making it difficult to radiate light to the outside of the light emitting device 41 at a desired reflection angle. The light-transmitting member 45 of the present invention is preferably made of a material having a small refractive index difference from the light-emitting element 44 and a high light transmittance from the ultraviolet region to the visible light region. For example, the light-transmitting member 45 is made of a transparent resin such as silicone resin, epoxy resin, or urea resin, or a low-melting glass or sol-gel glass. This can effectively suppress light reflection loss caused by the difference in refractive index between the light-emitting element 44 and the light-transmitting member 45, and can provide radiated light to the outside of the light-emitting device 41 with high efficiency and a desired radiation intensity or angular distribution.的 照明 装置 41。 The light emitting device 41. In addition, such a light-transmitting member 45 is formed by filling an inside of the frame 43 with an injection machine such as a dispenser and curing it with a baking oven or the like so as to cover the light-emitting element 44. In addition, the light-transmitting member 45 mixes and fills at any ratio, and utilizes the recombination of the electrons in the phosphor excited by the light emitted from the light-emitting το member 44 to emit blue, red, green, or yellow inorganic light. Like a phosphor, it can output light with a desired emission spectrum and color. In addition, it is preferable that the translucent member 45 is provided so that the distance between the upper surface and the light-emitting portion 46 of the light-emitting element 44 is 0 to 8 mm. Accordingly, the phosphor included in the light-transmitting member 45 with a constant thickness above the light-emitting portion 46 of the light-emitting element 44 can efficiently change the wavelength of light emitted from the light-emitting element 44 and can effectively suppress those The wavelength-converted light is obstructed by the phosphor, and 95381.doc -30-200527716 can effectively emit light to the outside of the light-transmitting member 45. As a result, the 'light output of the X-ray device 41' can be improved and the lighting characteristics such as brightness and color reproducibility can be made good. When the distance X (see FIG. 1) between the light-emitting portion 46 of the light-emitting το member 44 and the upper surface of the light-transmitting member 45 is longer than G.8 mm, the phosphor adjacent to the light-emitting το member 44 may be good. Although the ground wavelength converts light emitted from the light-emitting element material, it is difficult to efficiently emit the wavelength-converted light to the outside of the light-transmitting member 45. That is, it is difficult to make the radiation of the light to the outside good because the progress of the wavelength-converted light is hindered by the phosphor near the upper surface of the light-transmitting member 45. On the other hand, when the distance between the light-emitting portion 46 of the light-emitting element 44 and the surface of the light-transmitting member 45 is smaller than 0.1 mm, the number of phosphors excited by irradiation with light emitted from the light-emitting element 44 decreases, making it difficult Efficient wavelength conversion. Therefore, light of a wavelength with low visibility that has transmitted through the light-transmitting member 45 without undergoing wavelength conversion increases, and it is difficult to make the lighting characteristics such as light output, brightness, and color reproducibility good. In addition, although the light emitting element 44 may have a peak wavelength of radiated energy from any of the ultraviolet region to the infrared region, from the viewpoint of emitting white light or various colors of light visually, it is preferred that Light emitting elements from near ultraviolet to 300 to 500 nm. For example, a GaN, GaAIN, InGaN, or InGaAIN gallium nitride-based compound semiconductor or a silicon carbide-based compound semiconductor or ZnSe ( Elements such as zinc selenide) that form the light emitting layer. 95381.doc -31-200527716 Fig. 2 is a sectional view showing a light emitting device 50 of a second embodiment. The light-emitting device 50 is mainly composed of a base body 51, a reflecting member 52 as a frame body, a light-transmitting member 53, a conductive layer 57 and a convex portion 59. The light-emitting element housing package of the present invention includes a base 51, a frame-shaped reflecting member 52, and a conductive layer 57. The base body 51 has a mounting portion 51a of a light emitting element 55 in a central portion of the upper surface. The reflecting member 52 is provided on the outer peripheral portion of the upper surface of the base body 51 so as to surround the female receiver 51a. The conductive layer 57 is formed on the mounting portion 51 &. The light emitting element 55 is electrically connected to the conductive layer 57 via the conductive adhesive material 8. The conductive layer 57 is formed with a convex portion 59 on an upper surface which is located outside the outer periphery of the light emitting element 55. A wiring conductor is provided in the package. One of the wiring conductors is formed on the upper surface of the base body 51 and is electrically connected to the electrode of the light-emitting element 55, and the other end is led out to the side or lower surface of the base body 51. That is, one end of the wiring conductor serves as the conductor layer 57. The base body 51 of the present invention is composed of alumina ceramic or aluminum nitride sintered body, mullite sintered body, ceramic such as glass ceramic, or resin such as epoxy resin. The base 51 has a mounting portion 51 & on which the light emitting element 55 is mounted. When the substrate 51 is made of ceramic, the average particle diameter of the crystal grains of the ceramic is preferably 1 to 5 μm, as in the first embodiment of the present invention. A conductive layer 57 is formed on the mounting portion 51a to mount and fix the light-emitting element 55 on the base 51, and the light-emitting element 55 is electrically connected. The "conductor layer" is led to the outer surface of the light emitting device 50 through a wiring layer (not shown) formed inside the base body 51. By connecting the lead-out portion of the outer surface of the light emitting device 50 to an external circuit board, The light-emitting element 55 is electrically connected to an external circuit. When the base body 51 is made of ceramic, it is sintered at a high temperature to form a conductive layer 95381.doc -32- 200527716 57 and a metal paste made of W, Mo-Mn, Cu, Ag, etc. A conductor layer 57 is formed on the base body 51. In the case where the base body 51 is made of resin, a pin made of Cii or Fe_Ni alloy is cast and fixed inside the base body 51. The convex portion 59 is on the conductor layer 57. The upper portion is provided on the upper side than the outer periphery of the light emitting element 55. The convex portion 59 may be a conductive material or an insulating material. When the convex portion 59 is made of an insulating ceramic, for example, it is coated by printing The ceramic paste containing the material forming the base body 51 as a main component is formed by sintering at a high temperature at the same time as the conductor layer 57. When the base body 51 is made of resin, for example, the convex portion 59 is the same as the base body 51. The material composition is formed by mold molding at the same time as the base body 51. Also, when the convex portion 59 is a conductive material, a metal paste may be applied by printing on the conductive layer 57 and sintered, or by cutting or the like. A protruding portion is provided on the pin, and thus, the conductive layer 57 has a convex portion 59 formed on an upper surface located on the inner side than the outer periphery of the light-emitting element 55. Therefore, the light-emitting element 55 is raised by the convex portion 59. The conductive layer 57 is also on the upper side, and a gap can be reliably provided between the lower surface of the light emitting element 55 and the upper surface of the conductive layer 57. As a result, the conductive adhesive material 58 can be prevented from being squeezed out by the weight of the light emitting element 55 and leaking out of the conductor The layer 57 is diffused, and the conductive adhesive material 58 can be uniformly formed on the conductive layer 57 so that the light-emitting element 55 can be horizontally placed on the conductive layer 57. As a result, the light-emitting element 55 can be emitted as desired. The light emitted at an angle and emitted from the light emitting element 55 is reflected by the reflecting member 52 at a desired radiation angle and is emitted to the outside, and the intensity of the light emitted from the light emitting device is increased. c -33- 200527716 Furthermore, the conductive adhesive material 58 can be uniformly formed on the conductive layer 57 so that the light-emitting element 55 can be horizontally placed on the conductive layer 57, so that the heat generated from the light-emitting element 55 can also be made. It is effectively radiated to the outside through the conductive adhesive material "and the substrate 51. As a result, the temperature of the light emitting element 55 can be kept stable at all times, and the light intensity emitted from the light emitting element 55 can be kept stable in a state where the radiation intensity 2 is high.

此外，可以有效地防止導電性黏接材料58流出到比發光 元件55的外周還外側的位置，而保持在發光元件55^下 側’可以有效地防止從發光元件55發光的光被流出到比發 光元件55的外周還外侧的位置的導電性黏接材料58所吸 收。其結果’可以提供輻射強度高且亮度或彩色再現性等 光特性優越的發光裝置5〇。 mm。由此，在發光 性黏接材料5 8的良好 凸部59的高度較佳者係爲〇·“〜〇」 元件55與導體層57之間可以形成導電 的f液面，可卩更有效地防止導電性黏接材料58的流出In addition, it is possible to effectively prevent the conductive adhesive material 58 from flowing out to a position outside the outer periphery of the light emitting element 55, and keeping it under the light emitting element 55 ^ can effectively prevent light emitted from the light emitting element 55 from flowing out to The light-emitting element 55 is absorbed by the conductive adhesive material 58 at a position outside the periphery. As a result, it is possible to provide a light emitting device 50 having high radiation intensity and excellent light characteristics such as brightness and color reproducibility. mm. Therefore, it is preferable that the height of the good convex portion 59 of the light-emitting adhesive material 58 be 0 · “˜〇”. A conductive f-fluid surface can be formed between the element 55 and the conductive layer 57, which can more effectively Prevent outflow of conductive adhesive material 58

並且，可以進一步提高發光元件55與導體層57的接合強度。 在圖3A及圖3B中示出導體層57及凸部59的放大平面 圖。如圖3A所示，在比發光元件55的外周還位於内側的導 體層57的上面設有多個例如半球狀的凸&，如圖沾 所示，可以在比發光元件55的外周還位於内側的導體層57 的上面δ又置多個長方形狀的凸部59，以使其與發光元件55 的外周平行。如圖3Α及3Β所示，通過設置多個凸部59，從 而可以可罪地在發光元件55的下面與導體層57的上面之間 "又置間隙’在導體層57的上面與發光元件Μ的下面之間形 95381.doc -34· 200527716 成良好的導電性黏接材料58的彎液面。在這裏，以使發光 元件55相對於導體層57水平安放，平衡良好地設置凸部π 係重要的。#此，通過在導體層57上設置具有比發光元件 55的下面的面積還小的面積的凸部，從而即使經由導電性 黏接材料58接合導體層57與發光元件55的下面，也可以防 止用來將發光元件55接合固定在導體層57上的導電性黏接 材料5 8漏出導體層5 7並擴散，在安放部5 1 a上可以使導電性 黏接材料均勻擴散，可以將發光元件55水平地安放在安放 部5 la上。 發光元件55，設於其下面的電極通過Ag膏、金（Au)_錫 (Sn)焊錫等導電性黏接材料58進行連接。 而且’導體層57較佳者係在其露出的表面上以1〜2〇 μηι 左右的厚度被覆Ni或Au等财腐餘性優越的金屬就可以。由 此，可以有效地防止導體層57的氧化腐蝕，並且，可以使 發光元件55與導體層57的連接牢固。因此，較佳者係在導 體層57的露出表面上，利用電解電鍍或無電解電鍍法依次 被覆有例如厚度1〜10 μηι左右的Ni電鍍層和厚度爲〇.丨〜3 μιη左右的Au電鐘層。 又’利用焊錫、Ag焊料等焊料材料或環氧樹脂等黏接劑 等的接合材料，將反射構件52安裝在基體51的上面。反射 構件52在中央部上形成有貫通孔52a。較佳者係將貫通孔 52a的内周面作爲有效地反射發光元件55及螢光體發出的 光的反射面52b。 反射面52b係通過對反射構件52進行切削加工或模具成 95381.doc -35- 200527716 ^研磨加工等，做成光反射效率高的平滑面而形成的。 或者’可以通過例如利用電鍍或蒸鍍等在貫通孔52a的内周 面上形成A卜Ag、Au、白金(pt)、鈦(T”、鉻(Cr)、Cu等高 反射率的金屬薄膜而形成反射面52b。而且，在反射面52b 由Ag或Cu等因氧化而容易變色的金屬構成的情況下，較佳 者係利用電解電鍍或無電解電鍍法在其表面上依次被覆有 例如厚度1〜10 左右的Ni電鍍層和厚度爲0」〜3 μιη左 右的Au電鍍層。由此，可以提高反射面52b的耐腐蝕性。 此外，較佳者係反射面5 2b表面的算術平均粗粞：度Ra爲 0·004〜4 μιη，由此，可以使反射面良好地反射發光元件乃 及螢光體的光。若Ra超過4 μιη，則難以使發光元件55的光 均勻地反射’在發光裝置的内部容易産生漫反射。另一方 面，在不足0·004 μηι時，有難以穩定且有效地形成此種面 的傾向。 又，反射面52b，例如其縱剖面形狀可以列舉伴隨朝向上 側而向外侧擴張的如圖2所示的直線狀傾斜面、伴隨朝向上 側而向外侧擴張的曲面狀傾斜面或矩形的面等形狀。 如此’本發明的發光元件收納用封裝通過將發光元件55 安放在安放部51a上，並且通過導電性黏接材料58，與導體 層57電連接’用透光性構件53覆蓋發光元件55，從而形成 發光裝置5 0。 本發明的透光性構件53由環氧樹脂或矽樹脂等透明樹脂 構成。透光性構件53用分配器等注入機填充在反射構件52 的内側，用烘烤爐等進行熱固化，以便覆蓋發光元件55。 95381.doc 36- 200527716 而且，透光性構件53也可以含有可將發光元件55的光進 行波長變換的螢光體。 又，透光性構件53的上面，如圖2所示，較佳者係在其上 形成凸的形狀。由此，可以使從發光元件55向各種方向發 光的光透過透光性構件53的光路長近似，可以有效抑制輻 射強度的不均的産生。 圖4係表示本發明的第三實施方式的發光裝置6 〇的剖面 圖。發光裝置60主要由基體61、作爲框體的反射構件62、 含有螢光體64的透光性構件63構成。發光裝置⑽可以使發 光元件65的發光具有方向性而向外部發光。 本發明中的基體61，由氧化鋁陶瓷、氮化鋁材質燒結體、 莫來石材質燒結體或玻璃陶瓷等陶瓷或者環氧樹脂等樹脂 構成。又，基體61在其上面具有安放發光元件65、從上面 突出的安放部61a。又，在基體61由陶瓷構成的情況下，與 上述實施方式同樣，較佳者係陶瓷的晶粒的平均粒徑爲1 〜5 μηι 〇 此種安放部61a，在基體61的上面，可以通過利用焊料材 料或黏接劑等接合材料而將由氧化㈣冑、氮化紹材質燒 結體、莫來石材質燒結體、玻璃陶瓷等陶瓷、Fe_Ni_c〇合 金或Cu W 4金屬或者環氧樹脂等樹脂構成的凸部6b安裝 在基體61的上面，或者也可以在基體61上面將凸部6ib與基 體61作爲一體而形成。χ，可以通過在設於基體“的中央 部的貫通孔中嵌入安裝上述陶究、金屬或樹脂構成的凸部 61b而設置，以使其上側從基體61的上面突出。 9538l.doc 200527716 較佳者係凸部61b與基體61爲相同材質。由此，可以減小 安放部61a和基體61的熱膨脹差，可以有效地抑制在安放部 6U上産生變形，發光元件65的位置偏離，發光效率降低。 更佳者係將凸部61b與基體61做成一體。由此，由於沒有 必要在凸部61b與基體61之間介入接合材料，故可以將從發 光元件65産生的熱極爲良好地輻射到基體61。 在凸部61b與基體1成爲一體的情況下，例如可以通過將 成爲凸部61b或基體61的陶瓷生片（未燒結的）層疊，並且進 行燒結，並利用切削加工等金屬加工方法，或者通過以注 塑成型等將樹脂鑄模成型而進行製作。 又，如圖5的本發明的第四實施方式的發光裝置6〇a所 示，凸部61b可以傾斜爲伴隨側面朝向基體“侧而向外側擴 張。由此，在可以使從發光元件65産生的熱的擴散性提高， 並且，可以利用突出的安放部61a的側面使光有效地向上方 反射。其結果，可以提高發光元件65的發光效率及螢光體 64的波長變換的效率，並且可以使從發光元件“或螢光體 64發出的光有效地反射到上方，能夠長期以高輻射強度輸 出光。 在安放部61a上形成有用來電連接發光元件“的作爲配 線導體的電連接用圖案（圖中未示出）。該電連接用圖案通過 形成於基體61内部的配線層（圖中未示出）而導出到發光裝 置的外表面，與外部電路基板連接。由此，發光元件糾 外部電路可以電連接。 將發光元件65連接在電連接用圖案上的方法，有採用通 95381.doc -38- 200527716 過引線接合進行連接的方法或者利用了在發光元件65的下’ 面通過¥錫突起等電極66而進行連接的倒裝式接合方式# · 方法等。較佳者係利用倒裝式接合方式進行連接。由此， 由於可以將電連接用圖案設於發光元件65的正下方，故沒 有必要在^光元件65外周的基體61的上面設置用來設置電 連接用圖案的膏。由此，可以有效地抑制從發光元件65發 光的光被該基體61的電連接用圖案用的膏吸收而導致軸上 光度降低。 《電連接用®案可以通過在基體61的表面或内部形成例籲 如W Mo、Cu、Ag等金屬粉末的金屬化層，通過在基體61 中埋設Fe-Ni-Co合金等管腳，或者通過使形成了配線導體 的絕緣體構成的輸入輸出端子與設於基體61上的貫通孔嵌 入接合而進行設置。 而且，較佳者係使Ni或金（Au)等耐腐蝕性優越的金屬以1 〜20 μηι的厚度被覆在露出電連接用圖案的表面上，可以有 效地防止電連接用圖案的氧化腐蝕，可以使發光元件65與 · 電連接用圖案的連接牢固。因此，更佳者係利用電解電錢 或無電解電鍍法在電連接用圖案的表面上依次被覆有例如 厚度1〜10 μηι左右的Ni電鍍層和厚度爲0·1〜3 μηι左右的 Au電錢層。 又’與本發明的第二實施方式同樣，利用焊錫、Ag焊料 等焊料材料或環氧樹脂等粘接劑等的接合材料將反射構件 . 62安裝在基體61的上面。反射構件62在中央部上形成有貫 . 通孔62a ’並且將内周面作爲反射發光元件65發光的光的反 95381.doc -39- 200527716 射面62b。 反射面62b係與本發明的第二實施方式同樣地形成，省略 說明。 此外，反射面62b表面的算術平均粗糙度以與本發明第二 實施方式同樣，較佳者係爲0·004〜4 μηι。由此，反射面6孔 可以使發光元件65及螢光體64的光良好地反射。 反射面62b ’其縱剖面形狀例如可以列舉出伴隨朝向上側 而向外側擴張的圖4〜圖6所示的本發明的第三〜第五實施 方式的發光裝置60、60A、60B的直線狀傾斜面、伴隨朝向 上側而向外側擴張的曲面狀傾斜面或如圖7所示的本發明 的第六實施方式的發光裝置6〇C的矩形的面等形狀。 反射構件62雖然可以安裝在基體61上面的凸部61b以外 的任何部位上，但較佳者係安裝在發光元件65的周圍，以 便以所希望的面精度例如在發光裝置的縱剖面中，將發光 元件65夾持於其間且設於發光元件65兩侧的反射面621)成 爲對稱的狀態下設置反射面62b。由此，不僅用螢光體對來 自發光元件65的光進行波長變換並直接輻射到外部，而且 可以用反射面62b均勻無偏差地使從發光元件65向橫向等 發光的光及從螢光體64向下側放出的光反射，可以有效地 使軸上光度及亮度甚至彩色再現性等提高。 尤其如圖6所示，反射構件62越接近凸部61b，上述效果 越顯著。由此，通過用反射構件62包圍具有安放部6 la的凸 部61 b的周圍，從而可以使更多的光反射，能夠得到更高的 軸上光度。 95381.doc -40· 200527716 此外，安放在安放部61 a上的發光元件65的發光部69設置 爲位於比反射面62b的下端62c還高的位置上。即，從發光 元件65的發光部69的基體61的上面開始的高度比貫通孔 62a的下側開口部周圍的反射構件62的厚度L還大。由此， 可以有效地防止由反射構件62的加工時在反射面62b的下 端62c上層産生的變化等及將反射構件62接合在基體61上 時漏出的焊料材料導致漫反射發光元件6 5發光的光。與此 並且，可以將發光元件65發光的光照射到透光性構件63的 表面附近多量的螢光體64，可以使波長變換效率非常良好。 本發明的透光性構件63，由含有可以將來自發光元件65 的光進行波長變換的螢光體64的環氧樹脂或矽樹脂等透明 樹脂構成。透光性構件63被用分配器等注入機填充在反射 構件62的内側，並用烘烤爐等進行熱固化，以便覆蓋發光 元件65。由螢光體64對來自發光元件65的光進行波長變 換，可以取出具有所希望的波長光譜的光。 此外，透光性構件63設置爲其上面與發光元件65的發光 部的間隔X爲0.1〜〇·5 mm。由此，利用發光元件65的發光 部69上側的恒定厚度的透光性構件63所含的螢光體，可以 同效地對從發光元件65發出的光進行波長變換，那些進行 過波長變換的光不會被螢光體64妨害，而可以直接放出到 透光性構件63的外部。其結果，可以提高發光裝置的輻射 強度，可以使轴上光度或亮度、彩色再現性等光特性良好。 如圖8所不，在發光元件65的發光部69與透光性構件63 的表面的間隔X比〇·5 mm大時，螢光體64中、鄰近發光元件 95381.doc 41 200527716 65的螢光體（用斜線表示的螢光體64)雖然可以直接激勵發. 光元件65的光並進行波長變換，但難以向透光性構件。的 . 外部直接放出該進行過波長變換的光。即，通過由透光性 構件63表面附近的螢光體64(圖8的斜線部以外的螢光體料） 妨害光的進行，從而難以使向外部的軸上光度良好。 另一方面，如圖9所示，在發光元件65的發光部的與透光 性構件63的表面的間隔X比〇.lmm小時，難以有效地對發光 元件65的光進行波長變換。因此，沒有進行波長變換而透 過透光性構件63的視感性低的波長的光增多，難以使軸上 光度或亮度、彩色再現性等光特性良好。 如圖1 0的本發明的第七實施方式的發光裝置6 〇 D所示，透 光性構件63較佳者係其表面的算術平均粗糙度在中央部比 外周部還大。由此，可以抑制由透光性構件63的中央部和 外周部射出的光的輻射強度的差。即，利用透光性構件63 表面的中央部的粗糙面67,使從發光元件65發光、不會被 反射構件62等反射而直接從透光性構件63表面的中央部輻 鲁 射的強度大的光適度地散射，將光強度減弱一些。由此， 可以使光強度被減弱的從透光性構件63表面的中央部輻射 的光近似於強度減小的、從透光性構件63表面的外周部輻 射的光的強度，可以縮小透光性構件63的中央部與外周部 的輻射強度的差。其結果，發光裝置可以在寬範圍内輻射 一樣的光，並且可以抑制由於輻射強度集中在發光面的一 部分而産生的、給予人眼強烈刺激的眩光的現象，可以抑 · 制對人眼的不良影響。 95381.doc -42- 200527716 透光性構件63表面的算術平均粗糙度可以係中央部爲 〇·5 μιη以上，外周部爲〇·ΐ μιη以下。由此，可以使透光性 構件63表面中的輻射強度進一步無偏差地均勻，也可以使 幸S射強度良好。 而且’在從中央部到外周部由平滑面構成透光性構件63 的情況下，由於在中央部縮短從發光元件65到透光性構件 63的距離’故傳播損耗也減少，輻射強度強。與此相對， 由於在透光性構件63的外周部用反射構件62反射發光元件 65的光並向發光裝置的外部射出，故光路長變長，由反射 構件62的反射損耗導致輻射強度較小。其結果，在透光性 構件63的中央部和外周部，在光強度上産生大的差，産生 從發光裝置射出的光的顏色不均或照射面中的照度分佈不 均。與此相對，通過使透光性構件63的表面的算術平均粗 糙度在中央部比外周部大，故可以有效地防止從發光裝置 射出的光的顏色不均或照射面中的照度分佈不均的産生。 此種粗糙面67例如可以通過用金屬膜包覆透光性構件63 的表面的外周部，從發光裝置的上侧喷射陶瓷等粉末體並 進行粗化而形成。 又，透光性構件63的上面，如圖4所示可以在其上做成凸 的幵y狀由此即使對於從發光元件6 5向斜上方放出的光， 也可以使毛光部69與透光性構件63的表面的間隔爲〇. i〜 〇.5mm，可以進一步提高輻射強度。 圖11係表示本發明的第八實施方式的發光裝置的剖面 圖。發光裝置70主要由基體71、作爲框體的反射構件72、 95381.doc 200527716 透光性構件73、導體層77和凸部79構成。 本發明的發光元件收納用封裝備有：基體71、框狀的反 射構件72和導體層77。基體71在上面的中央部上具有發光 元件75的安放部71a。反射構件72係以包圍安放部71 a之方 式設置在基體71的上面的外周部上。導體層77形成於安放 部7 1 a上。發光元件75經由導電性粘接材料8而與導體層77 電連接。在其導體層77的周圍形成有由絕緣體構成的凸部 79。而且，在該封裝中設置配線導體。配線導體的一端形 成於基體71的上面並與發光元件75的電極電連接，並且另 一端導出到基體7 1的側面或下面。即，配線導體的一端成 爲導體層77。 本發明中的基體71由氧化鋁陶瓷、氮化鋁材質燒結體、 莫來石材質燒結體或玻璃陶瓷等陶瓷或者環氧樹脂等樹脂 構成。又，基體71在其上面具有安放發光元件5的安放部 81a。又，在基體71由陶瓷構成的情況下，與上述實施方式 同樣’較佳者係陶瓷的晶粒的平均粒徑爲1〜5 μιη。 在安放部7la上，形成有將發光元件75安放固定在基體71 上，並且，發光元件75電連接的導體層77。該導體層77通 過形成於基體71内部的配線導體（圖中未示出）而導出至發 光裝置70的外表面。通過將該發光裝置7〇的外表面的導出 部連接在外部電路基板上，從而電連接發光元件75和外部 電路。 導體層77在基體71由陶竞構成的情況下，在基體？！的上 面以高溫燒結成爲導體層77的由w、Mo-Mn、Cu、Ag等構 95381.doc -44- 200527716 成的金屬膏而形成。又，在基體71由樹脂構成的情況下， 鑄模成型由Cii或Fe-Ni合金等構成的管腳並設置固定在基 體71的内部。 凸部79形成於導體層77的周圍。在基體71由陶瓷構成的 情況下’例如凸部79通過印刷塗敷以形成基體71的材料爲 主要成分的陶瓷膏，與成爲導體層的金屬膏並且在高溫下 燒結而形成。在基體71由樹脂構成的情況下，例如凸部7 9 由與基體71相同的材質構成，與基體71並且利用模具成型 來形成。而且，凸部79可以係與基體71相同的材料，亦可 以不同。 由於在此種導體層77的周圍形成有由絕緣體構成的凸部 79，故利用凸部79可以防止導電性黏接材料78漏出導體層 77 ’可以使導電性黏接材料78的厚度均勻，使發光元件75 水平地安放在導體層77上。其結果，可以從發光元件75以 所希望的射出角度發光，並可以以所希望的輻射角度反射 從發光元件75發光的光並輻射到外部，可以使從發光元件 75發光的光的輻射強度增強。 又’通過可以使發光元件75水平地安放在導體層77上， 從而也能使從發光元件75産生的熱無偏差地均勻地經由導 電性黏接材料78及基體71而有效地輻射到外部。其結果， 可以將發光元件75的溫度一直維持爲穩定，可以在高的狀 悲下穩疋地維持從發光元件7 5發出的光。 進而’可以有效地防止從發光元件75發光的光由凸部79 反射到導電性黏接材料78上，可以有效地防止從發光裝置 95381.doc -45- 200527716 輻射的光被導電性黏接材料78吸收而產生轄射強度降低、 党度或彩色再現性降低nb，彳吨供輻㈣度高且發 光特性優越的發光裝置。 又，凸部79可U覆蓋導體層77的外周部，亦可以不覆蓋。 又’凸部79在導體層77爲多個的情況下，如圖12八所示，在 各導體層77的周圍可以形成於整周，亦可以如圖i2B所示只 在多個導體層77的集合體的周圍形成。 又，如圖13A所示，導體層77，其露出部可以比發光元件 75的外周還位於外側，較佳者係如圖UB所示，導體層刃 的露出的部位比發光元件75的外周還位於内側。由此，可 以防止用來接合導體層77和發光元件75的導電性黏接材料 78從導體層77與發光元件75之間露出，可以極有效地防止 從發光元件75發光的光照射到導電性黏接材料乃上。其結 果，可以防止從發光元件75發光的光被導電性黏接材料78 吸收或作爲輻射強度低的光反射，可以使從發光裝置發光 的光的輻射強度成爲高狀態，並且可以使亮度或彩色再現 性優越。 又，即使從發光元件75發光的光爲紫外光，導電性黏接 材料78亦不會劣化，可以使導體層77與發光元件75的接合 強度始終很高，可以長期牢固地將發光元件75固定在導體 層77上。其結果，可以使發光元件75的電極76與導體層π 的電連接長期可靠，可以使發光裝置耐用。 此外，較佳者係凸部79的侧面傾斜爲伴隨朝向基體7 j側 而向外側擴展。通過如此地構成，凸部79的側面與基體7 i 95381.doc -46- 200527716 的上面的角落部的空氣容易跑出，可以防止空氣進入該角 落部’可以有效地防止在導電性黏接材料78及透光性構件 73上産生空隙，由於溫度變化等導致空隙中的空氣膨脹而 産生剝離或裂紋。又，用凸部79外側的傾斜的側面可以使 光良好地反射到上側，可以提高發光效率。 較佳者係凸部79相對從發光元件75及透光性構件73所含 有的螢光體發出的光的反射率爲60%以上。根據該構成， 可以更有效地防止從發光元件75或螢光體發出的光被凸部 79吸收或作爲輻射強度低的光反射，可以使從發光裝置發 光的光的輻射強度極高。若凸部79的光的反射率不足 60% ’則從發光元件75或螢光體發光的光被凸部79吸收的 $增加’從發光裝置發光的光的輻射強度容易降低。 發光元件75之設於其下面的電極76係通過Ag膏、金（Au)_ 錫（Sn)焊錫等導電性黏接材料78被連接。 而且，與本發明的第二實施方式同樣，導體層77較佳者 係以1〜20 μηι左右的厚度將Ni或Au等耐腐蝕性優越的金屬 被覆在其露出的表面上。 又，利用焊錫或Ag焊料等焊料材料、環氧樹脂等黏接劑 的接合材料將反射構件72安裝在基體71的上面。反射構件 72在中央部形成有貫通孔72a。較佳者係貫通孔的内周 面作爲有效反射發光元件75及螢光體發出的光的反射面 72b 〇 反射面72b係與本發明的第二實施方式同樣，省略說明。 反射面72b表面算術平均粗縫度以與本發明的第二 95381.doc -47- 200527716 實施方式同樣，可以爲〇〇〇4〜4 μιη，由此，反射面7孔可 以將發光元件75及螢光體的光良好地反射。 又，反射面72b，例如其縱剖面形狀可以列舉伴隨朝向上 側而向外側擴張的圖U所示的直線狀傾斜面、伴隨朝向上 側而向外側擴張的曲面狀傾斜面或矩形的面等形狀。 如此，本發明的發光元件收納用封裝通過在將發光元件 安放在安放部71a上，並且，通過導電性黏接材料78而與導 體層77電連接，並用透光性構件73覆蓋發光元件乃，而形 成發光裝置70。 本發明的透光性構件73由環氧樹脂或矽樹脂等透明樹脂 構成。透光性構件73係用分配器等注入機填充到反射構件 72的内侧，並用烘烤爐等進行熱固化，以便覆蓋發光元件 75 ° 而且，透光性構件73可以含有可將發光元件75的光進行 波長變換的螢光體。 又’透光性構件7 3的上面可以如圖11所示，較佳者係在 其上形成凸的形狀。由此，可以使從發光元件75向各種方 向發光的光近似於透過透光性構件73的光路長，可以有效 抑制輻射強度的不均産生。 圖14係表示本發明的第九實施方式的發光裝置8〇的剖面 圖。發光裝置80主要由基體81、作爲框體的反射構件82、 透光性構件83、導體層87和凸部89構成。 本發明的發光元件收納用封裝備有：基體81、框狀的反 射構件82和導體層87。基體81在從上面突出的突出部81b 95381.doc -48- 200527716 上具有發光元件85的安放部81a。反射構件82以圍繞安放部 81 a的方式接合在基體81的上面，内周面作爲反射發光元件 85發光的光的反射面82b。導體層87形成於安放部8ia的上 面。發光元件85通過導電性黏接材料88而電連接導體層 87。導體層87的周圍被由絕緣體構成的凸部89包圍。而且， 在該封裝中設置配線導體。配線導體的一端形成於基體81 的上面，並與發光元件85的電極電連接，並且另一端向基 體8 1的側面或下面導出。即，配線導體的一端成爲導體層 87 ° 由此，可以使反射構件82的反射面82a良好地反射從發光 元件85的侧面向橫向及斜下方發光的光，而不會被反射構 件82與基體81的接合部或基體81的表面吸收，可以以所希 望的輻射角度用反射構件82反射並良好地輻射到外部。其 結果，可以提高從發光裝置80發光的光的輻射強度並穩定 地保持。 又，由於形成有突出部8 lb，以使安放部8 1 a從基體8 1的 上面離開，故可以使安放部8 la與反射構件82的下端可靠地 絕緣。因此，從平面看，可以使反射構件82的下端更接近 安放部81a，可以用反射構件82的反射面更良好地反射從發 光元件85發光的光。 又，可以利用由絕緣體構成的凸部89，防止導電性黏接 材料88從導體層87漏出，可以使導電性黏接材料88的厚度 均勻，可以使發光元件85水平地安放在導體層87上。其結 果，可以以所希望的輻射角度從發光元件85發光，可以用 9538l.doc -49- 200527716 反射構件82以所希望的輻射角度反射從發光元件85發光的 - 光並輕射到外部，可以使從發光裝置發光的光的輻射強度 《 增強。 此外’通過可以使發光元件85水平地安放在導體層87 上’從而也能使從發光元件85産生的熱無偏差且均勻地經 由導電性黏接材料8 8及基體81而有效地輻射到外部。其結 果’可以穩定地維持發光元件85的溫度，可以在高的狀態 下穩定地維持從發光元件85發光的光。 _ 進而’可以有效地防止從發光元件85發光的光由凸部89 照射到導電性黏接材料88上，可以有效地防止從發光裝置 輻射的光被導電性黏接材料吸收而産生的輻射強度的降 低、凴度或彩色再現性的降低。如此，可以提供輻射強度 高且發光特性優越的發光裝置。 本發明中的基體8 1由氧化鋁陶瓷、氮化鋁材質燒結體、 莫來石材質燒結體或玻璃陶瓷等陶瓷或者環氧樹脂等樹脂 構成。又，基體81在從上面突出的突出部81b上具有安放發 _ 光元件85的安放部81a。又，在基體81由陶瓷構成的情況 下，與上述實施方式同樣，較佳者係陶瓷的晶粒的平均粒 徑爲1〜5 μιη。 突出部81b可以與基體81成爲一體。此種情況下，可以利 用公知的陶兗生片層疊法或切削加工、模具成型等來形成。 此外，至於突出部81b，可以利用釺焊或黏接劑將立方體. 狀的突出部81b接合在基體81的上面。關於此種突出部· 81b，可以列舉出陶£或樹脂、玻璃、無機晶體、金屬等。 95381.doc -50- 200527716 在安放部81a上形成有將發光元件85安放固定在基體81 上’並且電連接發光元件85的導體層87。該導體層87通過 形成於基體8 1内部的配線導體（圖中未示出）而導出到發光 裝置80的外表面。通過使該發光裝置8〇的外表面的導出部 與外部電路基板連接’從而使發光元件8 5與外部電路電連 接。 導體層87在基體81由陶瓷構成的情況下，在基體81的上 面以南溫燒結成爲導體層87的由W、Mo-Mn、Cu、Ag等構 成的金屬膏而形成。又，在基體8丨由樹脂構成的情況下， 鑄模成型由Cu或Fe-Ni合金等構成的管腳並設置固定在基 體8 1的内部。 凸部89形成於導體層87的周圍。在基體81由陶瓷構成的 情況下’例如凸部89通過印刷塗敷以形成基體8丨的材料爲 主要成分的陶瓷膏，與成爲導體層87的金屬膏並且在高溫 下燒結而形成。在基體8 1由樹脂構成的情況下，例如凸部 89由與基體81相同的材質構成，與基體81並且利用模具成 型來形成。而且，凸部89可以係與基體81相同的材料，也 可以不同。 如此’由於在導體層87的周圍形成有由絕緣體構成的凸 部89 ’故利用凸部89可以防止導電性黏接材料88漏出導體 層87，可以使導電性黏接材料88的厚度均勻，使發光元件 85水平地安放在導體層87上。其結果，可以從發光元件85 以所希望的射出角度發光，並可以以所希望的輻射角度反 射從發光元件8 5發光的光並輻射到外部，可以使從發光裝 95381.doc -51 · 200527716 置發光的光的輻射強度增強。 ， 又，通過可以使發光元件85水平地安放在導體層87上，· 從而也能使從發光元件85産生的熱無偏差地均勻地經由導 電性黏接材料88及基體81而有效地輻射到外部。其結果， 可以將發光元件85的溫度一直維持爲穩定，可以在高的狀 態下穩定地維持從發光元件85發出的光。 進而，可以有效地防止從發光元件85發光的光由凸部89 照射到導電性黏接材料88上’可以有效地防止從發光裝I 輻射的光被導電性黏接材料88吸收而產生輻射強度降低、 免度或彩色再現性降低。如此’可以提供輻射強度高且發 光特性優越的發光裝置。 又，凸部89可以覆蓋導體層87的外周部，也可以不覆蓋。 此外，凸部89在導體層87爲多個的情況下，如圖i5A所示， 在各導體層87的周圍可以形成於整周，也可以如圖i5B所示 只在多個導體層87的集合體的周圍形成。 又，如圖16A所示，導體層87，其露出部可以比發光元件籲 85的外周還位於外側，較佳者係如圖16b所示，導體層” 的露出的部位比發光元件85的外周還位於内側。由此，可 以防止用來接合導體層8 7和發光元件8 5的導電性黏接材料 88從導體層87與發光元件85之間露出，可以極有效地防止 從發光元件85發光的光照射到導電性黏接材料“上。其結 果可以防止從發光元件85發光的光被導電性黏接材料88 * 吸收或作爲輻射強度低的光反射，可以使從發光裝置發光， 的光的輻射強度成爲高狀態，並且可以使亮度或彩色再現 95381.doc -52- 200527716 性優越。又，通過構成爲導體層87的漏出部位比發光元件 8 5的外周還位於内側的結構，從而作爲縮小安放部的結 構’可以與其配合而進一步小型化反射構件82，並且基體 8 1也可以與反射構件82配合而小型化，可以使發光元件收 納用封裝整體進一步小型化。 又，即使從發光元件85發光的光爲紫外光，導電性黏接 材料88也不會劣化，可以使導體層87與發光元件85的接合 強度一直高，可以長期牢固地將發光元件85固定在導體層 87上。其結果，可以使發光元件85的電極86與導體層87的 電連接長期可靠，可以使發光裝置壽命長。 此外，較佳者係凸部89的側面傾斜爲伴隨朝向基體81側 而向外側擴展。通過如此地構成，凸部89的侧面與基體8 1 的上面的角落部的空氣容易跑出，可以防止空氣進入該角 落部，可以有效地防止在導電性黏接材料88及透光性構件 83上產生空隙，由於溫度變化等導致空隙中的空氣膨脹而 産生剥離或裂紋。又，用凸部89外側的傾斜的侧面可以使 光良好地反射到上側，可以提高發光效率。 與本發明的第八實施方式同樣，較佳者係凸部89相對於 從發光元件85及透光性構件83所含有的螢光體發出的光的 反射率爲60%以上。 發光元件85，設於其下面的電極86通過Agf、金（Au)_ 錫（Sn)焊錫等導電性黏接材料88連接。 而且，與本發明的第二實施方式同樣，導體層87較佳者 係以1〜20 μιη左右的厚度將Ni4Au等耐腐蝕性優越的金屬 95381.doc 200527716 被覆在其露出的表面上。 又，利用焊錫或Ag焊料等焊料材料、環氧樹脂等黏接劑 的接合材料將反射構件82安裝在基體81的上面。反射構件 82在中央部形成有貫通孔82a。較佳者係貫通孔82a的内周 面作爲有效反射發光元件85及螢光體發出的光的反射面 82b 〇 反射面82b與本發明的第二實施方式同樣形成，省略其說 明。 此外，反射面82b表面的算術平均粗糙度以與本發明的第 二實施方式同樣，可以爲0·004〜4 μηι，由此，反射面82b 可以將發光元件85及螢光體的光良好地反射。 又，反射面82b，例如其縱剖面形狀可以列舉伴隨朝向上 側而向外側擴張的如圖14所示的直線狀傾斜面、伴隨朝向 上側而向外侧擴張的曲面狀傾斜面或矩形的面等形狀。 如此，本發明的發光元件收納用封裝通過在將發光元件 85安放在安放部81&上，並且，通過導電性黏接材料以而與 導體層87電連接，並用透光性構件83覆蓋發光元件85，從 而形成發光裝置80。 本發明的透光性構件83由環氧樹脂或矽樹脂等透明樹脂 構成。透光性構件83係用分配器等注入機填充到反射構件 82的内側，並用烘烤爐等進行熱固化，以便覆蓋發光元件 85 〇 而且，透光性構件83可以含有可將發光元件85的光進行 波長變換的螢光體。 95381.doc -54- 200527716 又，透光性構件83的上面可以如圖14所示，在其上形成 凸的形狀。由此，可以使從發光元件85向各種方向發光的 光近似於透過透光性構件83的光路長，可以有效抑制輻射 強度的不均産生。 圖17係表示本發明的第十實施方式的發光裝置9〇的剖面 圖。發光裝置90主要由基體91、反射構件92、含有螢光體 94的透光性構件93和發光元件95構成。該發光裝置％可以 使發光元件95的發光具有方向性而向外部發光。 本發明中的基體91由氧化鋁陶瓷、氮化鋁材質燒結體、 莫來石材質燒結體或玻璃陶瓷等陶瓷或者環氧樹脂等樹 脂、或者由Fe-Co合金，Cii-W，A1等的金屬構成。又，基 體91具有在上侧主面上安放固定具有安放發光元件％的安 放部92d的反射構件92的功能。又，在基體91由陶瓷構成的 情況下’與上述實施方式同樣，較佳者係陶瓷的晶粒的平 均粒徑爲1〜5 μηι。 利用焊錫、Ag焊料等焊料材料或環氧樹脂等黏接劑等的 接合材料將反射構件92安裝在基體91的上面。在反射構件 92上’在上側主面的中央部上形成發光元件95被安放在上 面的凸狀的安放部92b。又，在反射構件92上，在上側主面 的外周部上形成有圍繞安放部92b且將其周面作爲反射發 光元件95發光的光的反射面92c的侧壁部92a。由此，不僅 可以用螢光體94對來自發光元件95的光進行波長變換並直 接輻射到外部，而且可以用反射面92c使從發光元件95向橫 向等發光的光或從螢光體94放出到外側的光均勻無偏差地 95381.doc -55- 200527716 反射，可以有效地使軸上光度及亮度甚至彩色再現性等提 高。 反射構件92由氧化鋁陶瓷、氮化鋁材質燒結體、莫來石 材質燒結體或玻璃陶兗等陶竟、或者環氧樹脂等樹脂、或 者由Fe-Ni-Co合金、Cu_W、A1等金屬構成，通過進行切削 加工或模具成型等而形成。而且，可以通過在反射構件92 的側壁部9 2 a的内周面上實施切削加工或模具成型等形成 反射面92c，或者通過在側壁部92a的内周面上例如利用電 鍍或蒸鍍等形成A卜Ag、Au、白金（pt)、鈦（Ti)、鉻（Cr)、 Cu等高反射率的金屬薄膜，從而形成反射面92c。 而且，在反射面92c由Ag或Cu等因氧化而容易變色的金 屬構成的情況下，與本發明的第二實施方式同樣，較佳者 係利用電解電鍍或無電解電鍍法在其表面上依次被覆有例 如厚度1〜10 μηι左右的Ni電鍍層和厚度爲〇1〜3 左右 的Αιι電鍍層。由此，可以提高反射面92c的耐腐蝕性。 此外，與本發明的第二實施方式同樣，較佳者係反射面 92b表面的算術平均粗糙度Ra.〇〇〇4〜* μηι，由此，可以 使反射面92c良好地反射發光元件95及螢光體94的光。 反射面92c，例如其縱剖面形狀可以列舉伴隨朝向上側而 向外側擴張的圖17及圖18所示的本發明的第十實施方式及 第十一實施方式的發光裝置90、90A的直線狀傾斜面、伴隨 朝向上側而向外側擴張的曲面狀傾斜面或圖19所示的本發 明的第十二實施方式的發光裝置9〇b的本發明矩形的面等 形狀。 95381.doc -56- 200527716 本發明的反射面92c位於連接下端位於發光元件95的端 部的發光部98和安放部92b的上面92d及側面之間的角的光 路線99，或比光路線99還位於下側。由此，可以用反射面 92c有效地反射從發光元件95向橫向或下侧方向發光的直 接光，可以使輻射光強度極高。 而且’在發光元件95安放在安放部92b的上面92d，並且， 發光元件95的電極與形成於安放部92b的上面92d上的電極 塾或者由形成於基體91上面的配線導體的一部分構成的電 極塾（pad)電連接。該電極塾通過形成於基體9丨及反射構件 92内部的配線導體（圖中未示出）而向發光裝置9〇的外面（基 體91的侧面及下面）導出，並與外部電路基板連接。由此， 可以電連接發光元件9 5與外部電路。 此種電極墊例如通過在基體91或反射構件92的表面或内 部形成W、Mo、Cu、Ag等金屬粉末的金屬化層，或通過將 Fe-Ni-Co合金等管腳埋設在基體91或反射構件92中，或者 通過使形成了配線導體的絕緣構件構成的輸入輸出端子嵌 入並接合設置在基體91及反射構件92上的貫通孔而設置。 而且’較佳者係使Ni或金（Au)等耐腐蝕性優越的金屬以1 〜20 μηι左右的厚度被覆在電極塾或配線導體的露出表面 上’在可以有效地防止電極墊或配線導體的氧化腐蝕，並 且，可以使發光元件95和電極墊的連接牢固。因此，更佳 者係利用電解電鍍或無電解電鍍法在電極墊或配線導體露 出的表面上依次被覆有例如厚度1〜丨〇 μιη左右的Ni電鍍層 和厚度爲〇_1〜3μιη左右的Au電鍍層。 95381.doc -57- 200527716 又，安放部92b，其側面有時如圖17所示朝向基體9ι而垂· 直幵/成有時如圖1 8所示朝向基體9 i而擴散地形成。在擴▼ 散地形成的情況下，能夠將發光元件95産生的熱從安放部 92b有效地向下方傳遞，可以使發光元件％的放熱性提高， 可以良好地維持發光元件9 5的工作性。 在反射構件92爲絕緣構件的情況下，如圖17所示，發光 70件95及形成於安放部92b的上面92d上的電極墊，通過採 用金屬突起（電連接機構96)接合等倒裝式接合方式而電連 接。又，雖然在圖17中未圖示，但若在反射構件92上面形 成電極墊，則也能採用如金線（電連接機構96，）等引線接合 方式較佳者係倒裝式接合方式，由於可以將電極墊設置 在發光兀件95的正下方，故沒有必要在發光元件95的外周 的基體91的上面設置用來設置電連接用圖案的空間。由 此’可以有效抑地制從發光元件95發光的光被該基體91的 電連接用圖案用的空間吸收，且軸上光度降低。 此外’在基體91爲絕緣構件的情況下，如圖丨8所示，較 鲁 佳者係在由絕緣構件或金屬構件構成的反射構件92的安放 部92b的周圍形成貫通上下主面且比光路線還位於下側的 貫通孔97,發光元件95的電極與基體91上面的配線導體通 過貝通孔97而由導線（電連接機構96’）進行電連接。由此， 從發光元件95發光的直接光在比設於反射構件92的用來通 過導線96’的貫通孔97還上侧的位置由反射面92c反射，可以 -有效地防止直接光進入貫通孔97内而被吸收，可以提高輻 ， 射光強度。又，可以使發光元件95的下面完全接合在反射 95381.doc •58- 200527716 構件92的安放部92b上，可以將發光元件㈣熱良好地傳遞 到反射構件，可以進一步提高放熱性。 而且，貫通孔97的深度（即反射構件92底部的厚度）及貫 通孔97的孔徑係考慮與基體91的熱膨脹差及發光元件95產 生的熱傳導性等而適當選定的。又，反射構件“底部的厚 度即使在如圖17所示的情況下也可以適當選定。 又通過使陶瓷所含的晶粒的平均粒徑爲1〜5 來提高 基體91的反射率’從而可以有效抑制光從形成於反射構件 92的用來通過導線96，的貫通孔97漏出而被基體91吸收。 貫通孔97，如圖20的本發明的第十三實施方式的發光裝 置90C所示，較佳者係在其内部填充有含有絕緣性光反射粒 子的絕緣性膏97a，以便與反射構件92的上側主面齊平面。 由此’即使從發光元件95及螢光體94發出的光進入貫通孔 97，也可以由光反射粒子有效地反射到上側，可以使發光 裝置的輪射強度或軸上光度或亮度、彩色再現性等光特性 良好。 絕緣性貧97a所含的光反射粒子係在硫酸鋇、碳酸鈣、氧 化1呂' 二氧化石夕等的組成中含有Ca、Ti、Ba、A卜Si、Mg、 κ、〇的材料，較佳者係表面的全反射率爲以上。由此， 可以使發光裝置的輻射強度或軸上光度或亮度、彩色再現 性等光特性良好。 透光性構件93由環氧樹脂或矽樹脂等透明樹脂或者玻璃 等構成’含有可以將來自發光元件95的光進行波長變換的 營光體94 °透光性構件93係用分配器等注入機填充在反射 95381.doc -59- 200527716 構件92的内側，並用烘烤爐等進行熱固化，以便覆蓋發光 元件95。由此，可以利用螢光體94對來自發光元件95的光 進行波長變換，以取出具有所希望的波長光譜的光。 此外’透光性構件93設置爲其上面與發光元件95的發光 部的間隔X爲0· 1〜0.5 mm。由此，可以由發光元件95的發 光部上側的恒定厚度的透光性構件93所含的螢光體94對從 發光元件95發出的光高效地進行波長變換，並且那些進行 過波長變換的光不會被螢光體94妨害而可以直接放出到透 光性構件93的外部。其結果，可以提高發光裝置的輻射強 度’使軸上光度或亮度、彩色再現性等光特性良好。 如圖21所示，在發光元件95的發光部與透光性構件93的 表面的間隔X比0.5 mm長的情況下，螢光體94中鄰近發光元 件95的（用斜線表示的螢光體94)雖然可以直接激勵發光元 件95的光並進行波長變換，但難以將該波長變換過的光直 接放出到透光性構件93的外部。即，通過由透光性構件93 的表面附近的螢光體94(圖2 1的斜線部以外的螢光體94)妨 害光的進行，從而難以使向外部的軸上光度良好。 另一方面，如圖22所示，在發光元件95的發光部與透光 性構件93的表面的間隔X比〇·1 mm短的情況下，難以有效地 進行波長變換發光元件95的光。因此，未進行波長變換而 透過透光性構件93的視感性低的波長的光增多，難以使轴 上光度或亮度、彩色再現性等光特性良好。 又，透光性構件93的上面，如圖17所示，較佳者係在其 上形成凸的形狀。由此，即使對於從發光元件95向斜上方 95381.doc -60- 200527716 放出的光來說，也可以使發光部與透光性構件93表面的間 隔爲0.1〜0.5 mm，可以進一步提高輻射強度。 此外，本發明的發光裝置41、50、60、60A、60B、60C、 60D、70、80、90、90A、90B、90C，通過設置爲使 1個裝 置成爲規定的配置，或者通過將多個設置爲例如格子狀或 鋸齒狀、幸I射狀、將多個發光裝置41、50、60、60A、60B、 60C、60D、70、80、90、90A、90B、90C構成的圓狀或多 邊形狀的發光裝置群，多群形成爲同心狀等規定的配置， 從而可以做成照明裝置。由此，由於利用半導體構成的發 光元件44、55、65、75、85、95的電子的再結合産生的發 光，故能夠比現有的利用了放電的照明裝置還低消耗電力 且耐用，可以做成發熱少的小型照明裝置。其結果，可以 抑制從發光元件44、55、65、75、85、95産生的光的中心 波長的變動，可以長期以穩定的輻射光強度或輻射光角度 (配光分佈）照射光，並且可以做成可抑制照射面中的顏色不 均或照度分佈的偏離的照明裝置。 又，通過將本發明的發光裝置41、50、60、60A、60B、 60C、60D、70、80、90、90A、90B、90C作爲光源設置爲 規定的配置，並且在這些發光裝置41、5〇、6〇、6〇A、6〇B、 60C、60D、70、80、90、90A、90B、90C的周圍設置光學 設計爲任意形狀的反射工具或光學透鏡、光擴散板等，從 而可以做成可以輻射任意配光分佈的光的照明裝置。 例如’如圖23、圖24的平面圖及剖面圖所示，在爲將多 個發光裝置41、50、60、60A、60B、60C、60D、70、80、 95381.doc -61 - 200527716 90、90A、90B、90C，以多列配置於發光裝置驅動電路基 板101上，並在發光裝置4卜50、60、60A、60B、60C、60D、 70、80、90、90A、90B、90C的周圍設置有光學設計爲任 意形狀的反射工具100而成的照明裝置的情況下，在配置於 相鄰的1列上的多個發光裝置41、50、60、60A、60B、60C、 60D、70、80、90、90A、90B、90C中，較佳者係做成相鄰 的發光裝置41、50、60、60八、606、60(：、600、70、80、 90、90A、90B、90C的間隔不會最短的配置的所謂的鋸齒 狀。即，在將發光裝置 41、50、60、60A、60B、60C、60D、 70、80、90、90A、90B、90C配置爲格子狀的情況下，通 過將成爲光源的發光裝置41、50、60、60A、60B、60C、 60D、70、80、90、90A、90B、90C排列在直線上，從而眩 光增強，通過使此種照明裝置進入人的視覺，從而容易引 起不快感或對眼睛的障礙。與此相對，通過做成鋸齒狀， 從而可以抑制眩光，減輕對人眼的不快感或對眼睛的障 礙。進而，通過增長相鄰的發光裝置41、50、60、60A、60B、 60C、60D、70、80、90、90A、90B、90C間的距離，從而 可以有效抑制相鄰的發光裝置41、50、60、60A、60B、60C、 60D、70、80、90、90A、90B、90C間的熱干涉，抑制安裝 了發光裝置41、50、60、60A、60B、60C、60D、70、80、 90、90A、90B、90C的發光裝置驅動電路基板101内的熱的 不暢通，可以有效地向發光裝置41、50、60、60A、60B、 60C、60D、70、80、90、90A、90B、90C的外部輻射熱。 其結果，可以製作即使對人眼來說障礙也小的長期光學特 95381.doc •62- 200527716 性穩定的耐用（壽命長）的照明裝置。 此外，照明裝置係如圖25及圖26的平面圖及剖面圖所示 的在發光裝置驅動電路基板10 1 a上，將有多個發光裝置 41、50、60、60A、60B、60C、60D、70、80、90、90A、 9〇B、90C構成的圓狀或配置爲多邊形狀的發光裝置群，以 多群形成爲同心狀的照明裝置的情況下，較佳者係1個配置 爲圓狀或多邊形狀的發光裝置群中的發光裝置41、5〇、6〇、 60A、60B、60C、60D、70、80、90、90A、90B、90C的配 置數在外周側比照明裝置的中央侧多。由此，可以一邊適 度保持發光裝置 41、50、60、60A、60B、60C、60D、70、 80、90、90A、90B、90C之間的間隔，一邊更多地配置發 光袁置 41、50、60、60A、60B、60C、60D、70、80、90、 90A、90B、90C，可以進一步使照明裝置的照度提高。又， 可以降低照明裝置的中央部的發光裝置41、5〇、6〇、6〇A、 60B、60C、60D、70、80、90、90A、90B、90C的密度， 抑制發光裝置驅動電路基板10 1 a的中央部中的熱的不暢 通。由此’發光裝置驅動電路基板1 0 1 a内的溫度分佈變得 一樣，可以有效地向設置了照明裝置的外部電路基板或吸 熱設備傳遞熱，可以抑制發光裝置41、5〇、6〇、6〇A、60B、 60C、60D、70、80、90、90A、90B、90C 的溫度上升。其 結果，發光裝置 41、50、60、60A、60B、60C、60D、70、 8〇、90、90A、90B、90C可以長期穩定，並且可以製作耐 用的照明裝置。 至於此種照明裝置可列舉例如室内或室外所用的一般照 95381.doc -63- 200527716 明用器具、枝形吊燈用照明器具、住宅用照明器具、辦公 室用照明器具、店裝、展示用照明用器具、道路用照明器 具、感應燈器具及信號裝置、舞臺及演播室用的照明器具、 廣告燈、照明用電杆、水中照明用燈、閃光儀用燈、聚光 燈、埋入於電柱等的防範用照明、緊急用照明器具、懷中 電燈、電光布告牌等或調光器、自動亮滅器、顯示器等的 背光燈、動晝裝置、裝飾品、照光式開關、光感測器、醫 療用燈、車載燈等。 【實施例】 【實施例1】 關於本發明的第一實施方式的發光裝置41，以下示出實 施例。 首先’準備由成爲基體42的各種粒徑的晶粒構成的氧化 铭陶瓷基體。又，在安放發光元件44的安放部42a的周圍， 形成經由形成於基體42内部的内部配線而用來電連接發光 元件44與外部電路基板的配線導體。而且，基體42上面的 鲁 配線導體由Mo-Mn粉末構成的金屬化層成型爲直徑爲oj mm的圓形墊，在其表面上依次被覆厚度3 ^㈤的犯電鍍層與 厚度2 μιη的Au電鍍層。又，基體42内部的内部配線通過由 貝通導體構成的電連接部、所謂的通孔而形成。對於該通 孔，也和配線導體同樣，用由Mo-Mn粉末構成的金屬化導 體成型。 · 接著’用Ag膏將發出近紫外光的厚度爲〇.〇8 mm的發光 _ 元件44安裝在安放部42a上，並通過由Au構成的接合引線將 95381.doc -64 - 200527716 發光元件44電連接在配線導體上。 接下來，利用分配器在挤伞一 一 先凡件44周圍被覆含有被發光 件4的光激勵且進订黃色發光的榮光體㈣樹脂<透$ 性構件45)，並使其熱固化，製作作爲樣本的發光裝置η， 測定了光輸出。 而且勞光體相對於石夕樹脂儀1/4的填充率（質量。〆〇)均句 地分散。又，螢光體使用其平均粒徑爲L5〜80 _且進行 具有石榴石（garnet)結構的紀銘酸鹽系的黃色發光 體。 在基體42的陶曼的晶粒的平均粒徑爲10 μΐη左右的情況 下’光輸出爲14 mW。’然而，在基體42的陶究的晶粒的平 均粒控爲卜5μηι的情況下，光輸出爲i7mw，與陶究的晶 粒的平均粒徑爲10叫左右相比’光輸出的能量增加2〇%以 上。即，與陶瓷的晶粒的平均粒徑爲1〇㈣左右的情況相 比’通過採用陶竟的晶粒的平均粒徑爲卜5㈣的基體，從 而考慮有效抑制進人基體42㈣的光，並且由基體Μ的表 面中的光散射而被光照射的螢光體的數量增加，光輸出提 高。 又，在爲了提高發光裝置41的光輸出而使電流值增加的 情況下，也確認了可以有效抑制陶£的平均粒徑爲卜5_ 的基體相對順時針方向電流的發光效率的降低。 【實施例2】 接著’製作與上述實施例相同的結構且基體42燒結後的 陶曼的晶粒的平均粒徑爲1(_)、5(μηι)、ig(㈣的發光裝 95381.doc -65- 200527716 置41 ’測定了相對於向發光元件44的負載電流的全光束（光 輸出）°而且’發光裝置41安裝在任何地方冷卻功能都同等 的放熱設備中，用積分球測定光輸出。其結果如圖7所示。 如圖27所示，在向發光元件44的負載電流的額定電流爲 20(mA) ’額定電壓爲3·4(ν)的情況下，陶瓷的晶粒的平均 粒控爲1(μιη)的發光裝置41的光輸出成爲〇96〇m)，發光效 率爲14(lm/W)。又，陶竟的晶粒的平均粒徑爲5(μηι)的發光 裝置41的光輸出爲〇.8(lm)，發光效率爲。與此相 對，陶瓷的晶粒的平均粒徑爲10(μπι)的發光裝置41的光輸 出變爲〇.55(lm)，發光效率係8(lm/w)。即，額定電流中的 發光裝置41的光輸出，與基體42的陶瓷的晶粒的平均粒徑 爲10(μηι)相比，陶瓷的晶粒的平均粒徑爲、5以⑷的 發光裝置41的光輸出提高45〜74C%)。In addition, the bonding strength between the light emitting element 55 and the conductor layer 57 can be further increased. 3A and 3B are enlarged plan views of the conductive layer 57 and the convex portion 59. FIG. As shown in FIG. 3A, a plurality of, for example, hemispherical protrusions are provided on the conductive layer 57 located on the inner side than the outer periphery of the light-emitting element 55. As shown in FIG. The upper surface δ of the inner conductive layer 57 is further provided with a plurality of rectangular convex portions 59 so as to be parallel to the outer periphery of the light emitting element 55. As shown in FIGS. 3A and 3B, by providing a plurality of convex portions 59, it is possible to guiltfully lie between the lower surface of the light-emitting element 55 and the upper surface of the conductive layer 57. “An additional gap is provided between the upper surface of the conductive layer 57 and the light-emitting element. The shape of the bottom of M is 95381. doc -34 · 200527716 into the meniscus of a good conductive adhesive material 58. Here, it is important to provide the light-emitting element 55 horizontally with respect to the conductive layer 57 and to provide the convex portions π in a well-balanced manner. #Here, by providing the conductive layer 57 with a convex portion having an area smaller than the area of the lower surface of the light emitting element 55, even if the conductive layer 57 and the lower surface of the light emitting element 55 are joined via the conductive adhesive material 58, it can be prevented The conductive adhesive material 5 8 used to bond and fix the light emitting element 55 to the conductive layer 57 leaks out of the conductive layer 57 and diffuses. The conductive adhesive material can be uniformly diffused on the mounting portion 5 1 a, and the light emitting element can be diffused. 55 is placed horizontally on the placement section 5 la. The light emitting element 55 is connected to an electrode provided on the underside thereof by a conductive adhesive material 58 such as Ag paste or gold (Au) -tin (Sn) solder. Further, it is preferable that the 'conductor layer 57 is formed by coating a metal having excellent residual properties such as Ni or Au with a thickness of about 1 to 20 μm on the exposed surface. This can effectively prevent the oxidative corrosion of the conductive layer 57 and can secure the connection between the light emitting element 55 and the conductive layer 57. Therefore, it is preferable that the exposed surface of the conductor layer 57 is sequentially covered with, for example, a Ni plating layer having a thickness of about 1 to 10 μηι and a thickness of 0 by electrolytic plating or electroless plating. 电 ~ 3 μm Au electric clock layer. Further, the reflecting member 52 is mounted on the upper surface of the base body 51 by using a solder material such as solder or Ag solder or a bonding material such as an adhesive such as epoxy resin. The reflection member 52 is formed with a through hole 52a in the central portion. Preferably, the inner peripheral surface of the through-hole 52a is used as a reflective surface 52b that effectively reflects light emitted from the light emitting element 55 and the phosphor. The reflecting surface 52b is 95381 by cutting or molding the reflecting member 52. doc -35- 200527716 ^ Smooth surface with high light reflection efficiency. Alternatively, for example, a high-reflectivity metal thin film such as Ag, Au, platinum (pt), titanium (T), chromium (Cr), or Cu can be formed on the inner peripheral surface of the through hole 52a by, for example, plating or vapor deposition. The reflective surface 52b is formed. In the case where the reflective surface 52b is made of a metal that easily discolors due to oxidation such as Ag or Cu, it is preferable to sequentially coat the surface with, for example, a thickness by electrolytic plating or electroless plating. The Ni plating layer is about 1 to 10 and the Au plating layer is about 0 "to 3 μm thick. As a result, the corrosion resistance of the reflective surface 52b can be improved. In addition, the arithmetic average of the surface of the reflective surface 5 2b is preferred.粞: The degree Ra is from 0.004 to 4 μm, so that the reflecting surface can reflect the light of the light emitting element and the phosphor well. If Ra exceeds 4 μm, it is difficult to uniformly reflect the light of the light emitting element 55 ' Diffuse reflection easily occurs inside the light-emitting device. On the other hand, when the thickness is less than 0.004 μm, it is difficult to form such a surface stably and efficiently. In addition, the reflective surface 52b may be accompanied by a vertical cross-sectional shape, for example Upside-out As shown in Fig. 2, the shape is a linear inclined surface, a curved inclined surface or a rectangular surface that expands outward as it goes upward. In this way, the light-emitting element storage package of the present invention includes the light-emitting element 55 in the mounting portion 51a. The light-emitting element 55 is covered with a light-transmitting member 53 so as to form a light-emitting device 50. The light-transmitting member 53 of the present invention is made of epoxy resin or silicon. It is made of transparent resin such as resin. The translucent member 53 is filled with an injection machine such as a dispenser on the inside of the reflective member 52, and is heat-cured with a baking oven or the like so as to cover the light-emitting element 55. 95381. doc 36- 200527716 The translucent member 53 may include a phosphor capable of wavelength-converting the light of the light-emitting element 55. The upper surface of the light-transmitting member 53 is preferably formed in a convex shape as shown in Fig. 2. This makes it possible to approximate the optical path length of the light emitted from the light emitting element 55 in various directions through the light-transmitting member 53, and it is possible to effectively suppress the occurrence of unevenness in radiation intensity. Fig. 4 is a sectional view showing a light emitting device 60 of a third embodiment of the present invention. The light-emitting device 60 is mainly composed of a base 61, a reflecting member 62 as a frame, and a light-transmitting member 63 containing a phosphor 64. The light emitting device ⑽ can direct light emitted from the light emitting element 65 to emit light to the outside. The base 61 in the present invention is made of alumina ceramics, aluminum nitride sintered bodies, mullite sintered bodies, ceramics such as glass ceramics, or resins such as epoxy resins. In addition, the base body 61 has a light emitting element 65 on the upper surface thereof, and a mounting portion 61a protruding from the upper surface. When the substrate 61 is made of ceramic, the average particle diameter of the crystal grains of the preferred ceramic is 1 to 5 μm, as in the above-mentioned embodiment. Such a mounting portion 61a can pass through the upper surface of the substrate 61. It is composed of resins such as hafnium oxide, nitrided sintered body, mullite material, glass ceramics, Fe_Ni_c〇 alloy, Cu W 4 metal, or epoxy resin using bonding materials such as solder materials or adhesives. The convex portion 6b is attached to the upper surface of the base body 61, or the convex portion 6ib and the base body 61 may be integrally formed on the upper surface of the base body 61. χ can be provided by inserting and mounting the above-mentioned ceramic, metal or resin convex portion 61b in a through hole provided in the central portion of the base body so that its upper side protrudes from the upper surface of the base body 61. 9538l. doc 200527716 It is preferable that the convex portion 61b and the base 61 are made of the same material. As a result, the difference in thermal expansion between the mounting portion 61a and the base 61 can be reduced, deformation of the mounting portion 6U can be effectively suppressed, the position of the light emitting element 65 is shifted, and the light emitting efficiency is reduced. More preferably, the convex portion 61b is integrated with the base 61. Therefore, since it is not necessary to interpose a bonding material between the convex portion 61b and the base body 61, the heat generated from the light emitting element 65 can be radiated to the base body 61 very well. When the convex portion 61b is integrated with the base body 1, for example, a ceramic green sheet (unsintered) that becomes the convex portion 61b or the base body 61 may be laminated and sintered, and a metal processing method such as cutting may be used, or It is produced by molding a resin mold by injection molding or the like. Further, as shown in the light emitting device 60a of the fourth embodiment of the present invention, the convex portion 61b can be inclined to expand outward as the side faces the "side of the base body." As a result, the light emitting element 65 can be generated. The heat diffusivity is improved, and the side of the protruding mounting portion 61a can be used to effectively reflect light upward. As a result, the light-emitting efficiency of the light-emitting element 65 and the efficiency of the wavelength conversion of the phosphor 64 can be improved. The light emitted from the light emitting element or the phosphor 64 is effectively reflected upward, and light can be output at a high radiation intensity for a long period of time. An electrical connection pattern (not shown in the drawing) as a wiring conductor is formed on the mounting portion 61a to connect the light-emitting element with an electric call. The electrical connection pattern passes through a wiring layer (not shown in the drawing) formed inside the base body 61. And led to the outer surface of the light-emitting device, and connected to the external circuit substrate. Therefore, the light-emitting element can be electrically connected to the external circuit. The method of connecting the light-emitting element 65 to the pattern for electrical connection is 95381. doc -38- 200527716 A method of connecting by wire bonding or a flip-chip bonding method using a soldering method using electrodes 66 such as tin bumps on the lower side of the light-emitting element 65. The preferred connection is made by flip-chip bonding. Accordingly, since the pattern for electrical connection can be provided directly under the light-emitting element 65, it is not necessary to provide a paste for providing the pattern for electrical connection on the base 61 on the outer periphery of the optical element 65. Accordingly, it is possible to effectively suppress the light emitted from the light emitting element 65 from being absorbed by the paste for electrical connection patterns of the base 61, thereby reducing the on-axis lightness. "The electrical connection can be achieved by forming a metallized layer such as W Mo, Cu, Ag and other metal powders on the surface or inside of the substrate 61, by embedding pins such as Fe-Ni-Co alloy in the substrate 61, or The input and output terminals made of an insulator on which the wiring conductor is formed are provided by insert-bonding the through-holes provided in the base 61. Furthermore, it is preferable that a metal having excellent corrosion resistance such as Ni or gold (Au) is coated on the surface exposing the pattern for electrical connection with a thickness of 1 to 20 μm, which can effectively prevent oxidative corrosion of the pattern for electrical connection. The connection between the light-emitting element 65 and the pattern for electrical connection can be made firm. Therefore, it is more preferable that the surface of the pattern for electrical connection is sequentially covered with, for example, a Ni plating layer having a thickness of about 1 to 10 μm and an Au electrode having a thickness of about 0.1 to 3 μm by using electrolytic electricity or electroless plating. Money layer. Also, as in the second embodiment of the present invention, the reflecting member is made of a solder material such as solder, Ag solder, or a bonding material such as an adhesive such as epoxy resin.  62 is mounted on the base 61. The reflecting member 62 is formed on the central portion.  The through hole 62a 'and the inner peripheral surface serve as a reflection 95381 for reflecting light emitted from the light emitting element 65. doc -39- 200527716 shooting surface 62b. The reflecting surface 62b is formed in the same manner as the second embodiment of the present invention, and description thereof is omitted. In addition, the arithmetic average roughness of the surface of the reflecting surface 62b is the same as that of the second embodiment of the present invention, and the average roughness is preferably 0.004 to 4 μm. Thereby, the six holes on the reflecting surface can reflect the light of the light emitting element 65 and the phosphor 64 satisfactorily. The longitudinal cross-sectional shape of the reflecting surface 62b 'can be, for example, a linear inclination of the light-emitting devices 60, 60A, and 60B of the third to fifth embodiments of the present invention shown in Figs. Such as a surface, a curved inclined surface that expands outward as it goes toward the upper side, or a rectangular surface of the light emitting device 60C of the sixth embodiment of the present invention as shown in FIG. Although the reflecting member 62 may be mounted on any portion other than the convex portion 61b on the base 61, it is preferably mounted around the light-emitting element 65 so as to have a desired surface accuracy, for example, in a longitudinal section of the light-emitting device. The light-emitting element 65 is sandwiched therebetween and the reflection surfaces 621 provided on both sides of the light-emitting element 65 are provided in a symmetrical state in which the reflection surface 62b is provided. As a result, not only the light from the light-emitting element 65 is wavelength-converted by the phosphor and directly radiated to the outside, but also the light emitted from the light-emitting element 65 to the lateral direction and the like can be uniformly and non-deviated by the reflecting surface 62b and the phosphor The light reflected from the downward side of 64 can effectively improve the luminance and brightness on the axis and even the color reproducibility. In particular, as shown in FIG. 6, the closer the reflecting member 62 is to the convex portion 61b, the more significant the above-mentioned effects are. Accordingly, by surrounding the convex portion 61b having the mounting portion 61a with the reflecting member 62, more light can be reflected, and a higher on-axis luminance can be obtained. 95381. doc-40-40200527716 In addition, the light-emitting portion 69 of the light-emitting element 65 placed on the mounting portion 61a is provided at a position higher than the lower end 62c of the reflection surface 62b. That is, the height from the upper surface of the base 61 of the light emitting portion 69 of the light emitting element 65 is larger than the thickness L of the reflecting member 62 around the lower opening portion of the through hole 62a. Therefore, it is possible to effectively prevent the diffuse reflection light-emitting element 65 from emitting light due to a change in the upper layer of the lower surface 62c of the reflective surface 62b during processing of the reflective member 62 and solder material leaking out when the reflective member 62 is bonded to the base 61 Light. In addition, a large amount of phosphors 64 near the surface of the light-transmitting member 63 can be irradiated with light emitted from the light-emitting element 65, and the wavelength conversion efficiency can be made very good. The translucent member 63 of the present invention is made of a transparent resin such as an epoxy resin or a silicone resin containing a phosphor 64 capable of wavelength-converting light from the light-emitting element 65. The translucent member 63 is filled inside the reflective member 62 with an injection machine such as a dispenser, and is heat-cured with a baking oven or the like so as to cover the light-emitting element 65. By changing the wavelength of the light from the light emitting element 65 by the phosphor 64, light having a desired wavelength spectrum can be extracted. In addition, the translucent member 63 is provided so that the interval X between the upper surface and the light emitting portion of the light emitting element 65 is 0. 1 to 0.5 mm. Therefore, the phosphors contained in the light-transmitting member 63 with a constant thickness above the light-emitting portion 69 of the light-emitting element 65 can be used to perform wavelength conversion on the light emitted from the light-emitting element 65. Light is not disturbed by the phosphor 64 and can be directly emitted to the outside of the light-transmitting member 63. As a result, the radiation intensity of the light-emitting device can be increased, and optical characteristics such as on-axis luminance, brightness, and color reproducibility can be made good. As shown in FIG. 8, when the distance X between the light-emitting portion 69 of the light-emitting element 65 and the surface of the light-transmitting member 63 is greater than 0.5 mm, the phosphor 64 is adjacent to the light-emitting element 95381. The phosphor of doc 41 200527716 65 (phosphor 64 indicated by the oblique line) although it can directly stimulate the hair.  The light of the optical element 65 is wavelength-converted, but it is difficult to convert the light to the light-transmitting member. of .  The wavelength-converted light is directly emitted from the outside. That is, the progress of light is hindered by the phosphor 64 near the surface of the light-transmitting member 63 (a phosphor material other than the hatched portion in FIG. 8), so that it is difficult to make the brightness on the external axis good. On the other hand, as shown in FIG. 9, the distance X from the surface of the light-transmitting member 63 in the light-emitting portion of the light-emitting element 65 is 0.5. When it is 1 mm, it is difficult to efficiently perform wavelength conversion of light from the light emitting element 65. Therefore, light with a low wavelength that passes through the light-transmitting member 63 without undergoing wavelength conversion increases in visibility, and it is difficult to make optical characteristics such as on-axis luminance, brightness, and color reproducibility good. As shown in the light-emitting device 60D of the seventh embodiment of the present invention, the light-transmitting member 63 preferably has an arithmetic average roughness of the surface larger at the central portion than at the outer peripheral portion. This makes it possible to suppress a difference in the radiant intensity of the light emitted from the central portion and the outer peripheral portion of the light-transmitting member 63. That is, the rough surface 67 of the central portion of the surface of the light-transmitting member 63 has a high intensity for radiating light from the light-emitting element 65 without being reflected by the reflective member 62 and directly radiating from the central portion of the surface of the light-transmitting member 63. The light is scattered moderately, reducing the intensity of the light. Thereby, the intensity of the light radiated from the central portion of the surface of the light-transmitting member 63 whose light intensity is reduced can be approximated to the intensity of the light radiated from the outer peripheral portion of the surface of the light-transmitting member 63, and light transmission can be reduced. The difference in radiation intensity between the central portion and the outer peripheral portion of the sexual member 63. As a result, the light-emitting device can radiate the same light over a wide range, and can suppress the glare which is caused to the human eye due to the radiation intensity concentrated on a part of the light-emitting surface. influences. 95381. doc -42- 200527716 The arithmetic average roughness of the surface of the light-transmitting member 63 may be 0.5 μm or more in the central portion and 0 μm or less in the outer peripheral portion. Thereby, the radiation intensity on the surface of the light-transmitting member 63 can be made more uniform without deviation, and the S-ray intensity can also be made good. Furthermore, when the light-transmitting member 63 is formed of a smooth surface from the central portion to the outer peripheral portion, the distance from the light-emitting element 65 to the light-transmitting member 63 is shortened at the central portion, so that the propagation loss is also reduced and the radiation intensity is strong. On the other hand, the reflection member 62 on the outer periphery of the light-transmitting member 63 reflects the light of the light-emitting element 65 and emits the light to the outside of the light-emitting device. Therefore, the optical path length becomes long, and the radiation intensity is small due to the reflection loss of the reflection member 62 . As a result, a large difference occurs in the light intensity between the central portion and the outer peripheral portion of the light-transmitting member 63, and the color of the light emitted from the light-emitting device is uneven or the illuminance distribution on the illuminated surface is uneven. On the other hand, by making the arithmetic average roughness of the surface of the light-transmitting member 63 larger at the central portion than at the outer peripheral portion, it is possible to effectively prevent uneven color of light emitted from the light-emitting device or uneven distribution of illuminance on the irradiation surface. The generation. Such a rough surface 67 can be formed by, for example, covering a peripheral portion of the surface of the light-transmitting member 63 with a metal film, and spraying and roughening a powder body such as ceramics from the upper side of the light-emitting device. Moreover, the upper surface of the light-transmitting member 63 can be formed in a convex shape like FIG. 4, so that even if the light is emitted obliquely upward from the light-emitting element 65, the hairy portion 69 and The distance between the surfaces of the light-transmitting member 63 is 0.  i ~ 〇. 5mm can further increase the radiation intensity. Fig. 11 is a sectional view showing a light emitting device according to an eighth embodiment of the present invention. The light-emitting device 70 is mainly composed of a base 71 and reflective members 72 and 95381 as a frame. doc 200527716 A light-transmitting member 73, a conductive layer 77, and a convex portion 79 are formed. The light-emitting element housing package of the present invention includes a base body 71, a frame-shaped reflective member 72, and a conductive layer 77. The base 71 has a mounting portion 71a of a light emitting element 75 in a central portion of the upper surface. The reflecting member 72 is provided on the outer peripheral portion of the upper surface of the base body 71 so as to surround the mounting portion 71a. A conductive layer 77 is formed on the mounting portion 7 1 a. The light emitting element 75 is electrically connected to the conductor layer 77 via the conductive adhesive material 8. A convex portion 79 made of an insulator is formed around the conductor layer 77. A wiring conductor is provided in the package. One end of the wiring conductor is formed on the upper surface of the base 71 and is electrically connected to the electrode of the light-emitting element 75, and the other end is led out to the side or the lower surface of the base 71. That is, one end of the wiring conductor becomes the conductor layer 77. The substrate 71 in the present invention is made of alumina ceramics, sintered aluminum nitride materials, sintered mullite materials, ceramics such as glass ceramics, or resins such as epoxy resins. The base body 71 has a mounting portion 81a on which the light emitting element 5 is mounted. When the substrate 71 is made of ceramic, the average particle diameter of the crystal grains of the preferred ceramic is 1 to 5 μm as in the above embodiment. A conductive layer 77 is formed on the mounting portion 71a to place and fix the light emitting element 75 on the base 71, and the light emitting element 75 is electrically connected. The conductor layer 77 is led out to the outer surface of the light emitting device 70 through a wiring conductor (not shown) formed inside the base 71. By connecting the lead-out portion on the outer surface of the light-emitting device 70 to an external circuit board, the light-emitting element 75 and the external circuit are electrically connected. When the conductor layer 77 is composed of Tao Jing, is the conductor layer 77 in the substrate? !! The upper surface is sintered at a high temperature to form a conductive layer 77 composed of w, Mo-Mn, Cu, Ag, etc. 95381. doc -44- 200527716 into metal paste. When the base 71 is made of resin, a pin made of Cii, Fe-Ni alloy, or the like is cast and fixed inside the base 71. The convex portion 79 is formed around the conductive layer 77. In the case where the base body 71 is made of ceramics, for example, the convex portion 79 is formed by printing and applying a ceramic paste whose main component is the material forming the base body 71, and a metal paste which becomes a conductor layer, and is sintered at a high temperature. When the base body 71 is made of resin, for example, the convex portion 7 9 is made of the same material as the base body 71 and is formed with the base body 71 by molding. The convex portion 79 may be made of the same material as the base 71, or may be different. Since a convex portion 79 made of an insulator is formed around such a conductive layer 77, the convex portion 79 can prevent the conductive adhesive material 78 from leaking out of the conductive layer 77 ', and the thickness of the conductive adhesive material 78 can be made uniform. The light emitting element 75 is horizontally placed on the conductive layer 77. As a result, light can be emitted from the light emitting element 75 at a desired emission angle, light emitted from the light emitting element 75 can be reflected at a desired radiation angle and radiated to the outside, and the intensity of the light emitted from the light emitting element 75 can be increased. . Furthermore, the light-emitting element 75 can be horizontally placed on the conductive layer 77, so that the heat generated from the light-emitting element 75 can be efficiently radiated to the outside through the conductive adhesive material 78 and the substrate 71 without deviation. As a result, the temperature of the light-emitting element 75 can be kept constant at all times, and the light emitted from the light-emitting element 75 can be stably maintained in a high state. Furthermore 'can effectively prevent the light emitted from the light emitting element 75 from being reflected by the convex portion 79 to the conductive adhesive material 78, and can effectively prevent the light emitting device 95381. doc -45- 200527716 The radiated light is absorbed by the conductive adhesive material 78 to produce a light-emitting device with reduced radiation intensity, reduced partyness or color reproducibility nb, high radiation intensity, and excellent light emission characteristics. The convex portion 79 may cover the outer peripheral portion of the conductive layer 77 or may not be covered. Also, in the case where there are a plurality of conductive layers 77, as shown in FIG. 12A, the convex portions 79 may be formed around the entire conductive layer 77, or may be formed only in a plurality of conductive layers 77 as shown in FIG. I2B. Formed around the aggregate. As shown in FIG. 13A, the exposed portion of the conductive layer 77 may be located outside the outer periphery of the light emitting element 75. Preferably, as shown in FIG. UB, the exposed portion of the conductive layer blade is larger than the outer periphery of the light emitting element 75. Located inside. Thereby, the conductive adhesive material 78 for bonding the conductive layer 77 and the light emitting element 75 can be prevented from being exposed between the conductive layer 77 and the light emitting element 75, and the light emitted from the light emitting element 75 can be prevented from being radiated to the conductivity extremely effectively. The bonding material is on. As a result, the light emitted from the light emitting element 75 can be prevented from being absorbed by the conductive adhesive material 78 or reflected as light having a low radiation intensity, the radiation intensity of the light emitted from the light emitting device can be made high, and the brightness or color can be improved. Excellent reproducibility. In addition, even if the light emitted from the light emitting element 75 is ultraviolet light, the conductive adhesive material 78 is not deteriorated, and the bonding strength of the conductive layer 77 and the light emitting element 75 can always be high, and the light emitting element 75 can be firmly fixed for a long time. On the conductor layer 77. As a result, the electrical connection between the electrode 76 of the light emitting element 75 and the conductor layer π can be made reliable for a long period of time, and the light emitting device can be made durable. Further, it is preferable that the side surface of the convex portion 79 is inclined so as to expand outward as it goes toward the base 7j side. By doing so, the side of the convex portion 79 and the base body 7 i 95381. doc -46- 200527716 The air in the upper corners is easy to escape, which can prevent air from entering the corners. 'It can effectively prevent the gaps in the conductive adhesive material 78 and the light-transmitting member 73 from being caused by temperature changes. The air in the void expands to cause peeling or cracking. In addition, the inclined side surface outside the convex portion 79 can reflect light to the upper side well, and can improve the light emitting efficiency. It is preferable that the convex portion 79 has a reflectance of 60% or more with respect to light emitted from the phosphors included in the light emitting element 75 and the translucent member 73. With this configuration, it is possible to more effectively prevent the light emitted from the light emitting element 75 or the phosphor from being absorbed by the convex portion 79 or reflected as light with low radiation intensity, and it is possible to make the radiation intensity of the light emitted from the light emitting device extremely high. If the reflectance of the light from the convex portion 79 is less than 60% ', the increase in the amount of light absorbed by the convex portion 79 from the light emitted from the light emitting element 75 or the phosphor is liable to decrease the radiation intensity of the light emitted from the light emitting device. An electrode 76 provided below the light-emitting element 75 is connected by a conductive adhesive material 78 such as an Ag paste and gold (Au) _tin (Sn) solder. Further, as in the second embodiment of the present invention, it is preferable that the conductive layer 77 coats the exposed surface of a metal having excellent corrosion resistance such as Ni or Au with a thickness of about 1 to 20 µm. Further, the reflecting member 72 is mounted on the upper surface of the base 71 using a solder material such as solder or Ag solder, or a bonding material such as an epoxy resin. The reflection member 72 is formed with a through hole 72a in a central portion. Preferably, the inner peripheral surface of the through hole serves as a reflective surface 72b for effectively reflecting light emitted from the light emitting element 75 and the phosphor. The reflective surface 72b is the same as the second embodiment of the present invention, and description thereof is omitted. The reflective surface 72b has an arithmetic mean shirring surface which is in line with the second 95381 of the present invention. doc -47- 200527716 In the same manner as in the embodiment, it can be 0.001 to 4 μm. Therefore, the 7 holes on the reflecting surface can reflect the light of the light emitting element 75 and the phosphor well. Examples of the longitudinal cross-sectional shape of the reflecting surface 72b include a straight inclined surface shown in FIG. U that expands outward as it goes upward, and a curved inclined surface or rectangular surface that expands outward as it goes upward. As described above, the light-emitting element storage package of the present invention is configured by placing the light-emitting element on the mounting portion 71 a and electrically connecting the conductive layer 77 with a conductive adhesive material 78 and covering the light-emitting element with a light-transmitting member 73. Thus, a light emitting device 70 is formed. The translucent member 73 of the present invention is made of a transparent resin such as epoxy resin or silicone resin. The light-transmitting member 73 is filled with an injection machine such as a dispenser into the inside of the reflection member 72 and is heat-cured with a baking oven or the like so as to cover the light-emitting element 75 °. Further, the light-transmitting member 73 may contain a light-emitting element 75 A phosphor that converts light to wavelengths. The upper surface of the light-transmitting member 7 3 may be a convex shape as shown in FIG. 11. This makes it possible to make the light emitted from the light emitting element 75 in various directions approximate the length of the light path through the light-transmitting member 73, and it is possible to effectively suppress the occurrence of unevenness in radiation intensity. Fig. 14 is a sectional view showing a light emitting device 80 of a ninth embodiment of the present invention. The light emitting device 80 is mainly composed of a base body 81, a reflecting member 82 as a frame body, a light transmitting member 83, a conductive layer 87, and a convex portion 89. The light emitting element housing package of the present invention includes a base body 81, a frame-shaped reflective member 82, and a conductive layer 87. The base 81 has a protruding portion 81b 95381 protruding from above. doc-48-200527716 has a mounting portion 81a of a light emitting element 85. The reflecting member 82 is bonded to the upper surface of the base body 81 so as to surround the mounting portion 81 a, and the inner peripheral surface serves as a reflecting surface 82 b that reflects light emitted from the light emitting element 85. The conductive layer 87 is formed on the mounting portion 8ia. The light emitting element 85 is electrically connected to the conductor layer 87 via a conductive adhesive material 88. The conductor layer 87 is surrounded by a convex portion 89 made of an insulator. A wiring conductor is provided in the package. One end of the wiring conductor is formed on the upper surface of the base body 81 and is electrically connected to the electrode of the light-emitting element 85, and the other end is led out to the side or lower surface of the base body 81. That is, one end of the wiring conductor becomes a conductor layer 87 °. As a result, the reflecting surface 82a of the reflecting member 82 can reflect light that is emitted laterally and obliquely downward from the side surface of the light emitting element 85 without being affected by the reflecting member 82 and the substrate. The bonding portion 81 or the surface of the base 81 absorbs and can be reflected by the reflecting member 82 at a desired radiation angle and radiated well to the outside. As a result, the radiation intensity of the light emitted from the light emitting device 80 can be increased and stably maintained. Further, since the protruding portion 8 lb is formed so that the setting portion 8 1 a is separated from the upper surface of the base body 81, the setting portion 8 a and the lower end of the reflecting member 82 can be reliably insulated. Therefore, the lower end of the reflecting member 82 can be made closer to the mounting portion 81a when viewed from a plane, and the light emitted from the light emitting element 85 can be more well reflected by the reflecting surface of the reflecting member 82. In addition, the convex portion 89 made of an insulator can be used to prevent the conductive adhesive material 88 from leaking from the conductive layer 87, the thickness of the conductive adhesive material 88 can be made uniform, and the light emitting element 85 can be horizontally placed on the conductive layer 87. . As a result, light can be emitted from the light emitting element 85 at a desired radiation angle, and 9538l can be used. doc -49- 200527716 The reflecting member 82 reflects the light emitted from the light emitting element 85 at a desired radiation angle and lightly radiates it to the outside, so that the radiation intensity of the light emitted from the light emitting device can be increased. In addition, 'the light-emitting element 85 can be horizontally placed on the conductor layer 87', so that the heat generated from the light-emitting element 85 can be efficiently radiated to the outside through the conductive adhesive material 8 8 and the base body 81 without deviation. . As a result, the temperature of the light emitting element 85 can be stably maintained, and the light emitted from the light emitting element 85 can be stably maintained in a high state. _ Furthermore, 'the light emitted from the light emitting element 85 can be effectively prevented from being radiated to the conductive adhesive material 88 by the convex portion 89, and the radiation intensity generated by the light emitted from the light emitting device can be effectively prevented from being absorbed by the conductive adhesive material. Reduction in color, color, or color reproducibility. Thus, a light-emitting device having high radiation intensity and excellent light-emitting characteristics can be provided. The base body 81 in the present invention is made of alumina ceramics, sintered aluminum nitride materials, sintered mullite materials, ceramics such as glass ceramics, or resins such as epoxy resins. In addition, the base body 81 has a mounting portion 81a on which a light emitting element 85 is mounted on a protruding portion 81b protruding from the upper surface. When the substrate 81 is made of ceramic, the average particle diameter of the crystal grains of the ceramics is preferably 1 to 5 μm, as in the above embodiment. The protruding portion 81 b may be integrated with the base body 81. In this case, it can be formed by a known method of laminating ceramic green sheets, cutting processing, die molding, or the like. In addition, as for the protruding portion 81b, the cube can be soldered or bonded.  The protruding portion 81 b is joined to the upper surface of the base body 81. Examples of such protrusions 81b include ceramics, resins, glass, inorganic crystals, and metals. 95381. doc -50- 200527716 A conductive layer 87 is formed on the mounting portion 81a to mount and fix the light emitting element 85 on the base 81 and electrically connects the light emitting element 85. The conductor layer 87 is led to the outer surface of the light emitting device 80 through a wiring conductor (not shown) formed inside the base body 81. By connecting the lead-out portion of the outer surface of the light-emitting device 80 to an external circuit substrate ', the light-emitting element 85 is electrically connected to an external circuit. When the conductive layer 87 is made of ceramic, the conductive layer 87 is formed by sintering a metal paste made of W, Mo-Mn, Cu, Ag, or the like into the conductive layer 87 at a temperature south of the upper surface of the base 81. When the base body 81 is made of resin, a pin made of Cu, Fe-Ni alloy, or the like is cast and fixed inside the base body 81. The convex portion 89 is formed around the conductive layer 87. In the case where the base body 81 is made of ceramics, for example, the convex portion 89 is formed by printing and applying a ceramic paste whose main component is the material forming the base body 8 and a metal paste that becomes the conductor layer 87 and sintered at a high temperature. When the base body 81 is made of resin, for example, the convex portion 89 is made of the same material as the base body 81, and is formed with the base body 81 using a mold. The convex portion 89 may be made of the same material as the base body 81 or may be different. In this way, since the convex portion 89 made of an insulator is formed around the conductive layer 87, the convex portion 89 can prevent the conductive adhesive material 88 from leaking out of the conductive layer 87, and the thickness of the conductive adhesive material 88 can be made uniform. The light emitting element 85 is horizontally placed on the conductor layer 87. As a result, light can be emitted from the light emitting element 85 at a desired emission angle, and light emitted from the light emitting element 85 can be reflected at a desired radiation angle and radiated to the outside, so that the light emitting device 95381 can be made. doc -51 · 200527716 The intensity of the radiant light is increased. In addition, the light-emitting element 85 can be horizontally placed on the conductive layer 87, so that the heat generated from the light-emitting element 85 can be efficiently radiated to the conductive adhesive material 88 and the substrate 81 uniformly without deviation. external. As a result, the temperature of the light-emitting element 85 can be kept constant at all times, and the light emitted from the light-emitting element 85 can be stably maintained in a high state. Furthermore, it is possible to effectively prevent the light emitted from the light emitting element 85 from being irradiated onto the conductive adhesive material 88 by the convex portion 89. It is possible to effectively prevent the light radiated from the light emitting device I from being absorbed by the conductive adhesive material 88 to generate radiation intensity. Reduced, extinction or color reproducibility. In this way, it is possible to provide a light-emitting device having high radiation intensity and excellent light-emitting characteristics. The convex portion 89 may or may not cover the outer peripheral portion of the conductive layer 87. In addition, when there are a plurality of conductive layers 87, as shown in FIG. I5A, the convex portions 89 may be formed on the entire circumference of each conductive layer 87, or may be formed only on a plurality of conductive layers 87 as shown in FIG. I5B. Formed around the assembly. Also, as shown in FIG. 16A, the exposed portion of the conductive layer 87 may be located outside than the outer periphery of the light-emitting element 85. Preferably, as shown in FIG. 16b, the exposed portion of the conductive layer 87 is more than the outer periphery of the light-emitting element 85. It is also located inside. This prevents the conductive adhesive material 88 used to join the conductive layer 87 and the light-emitting element 85 from being exposed between the conductive layer 87 and the light-emitting element 85, and extremely effectively prevents light from being emitted from the light-emitting element 85. Of light hits the conductive adhesive material ". As a result, the light emitted from the light emitting element 85 can be prevented from being absorbed by the conductive adhesive material 88 * or reflected as light having a low radiation intensity, the light emitted from the light emitting device can be emitted, and the radiation intensity of the light can be made high. Color reproduction 95381. doc -52- 200527716 is superior. In addition, the structure in which the leakage portion of the conductive layer 87 is located inside than the outer periphery of the light-emitting element 85 can be used as a structure for reducing the mounting portion, and the reflecting member 82 can be further miniaturized, and the base 8 1 can also be formed with The reflection member 82 can be reduced in size in cooperation with each other, and the entire light-emitting element housing package can be further reduced in size. In addition, even if the light emitted from the light emitting element 85 is ultraviolet light, the conductive adhesive material 88 is not deteriorated, and the bonding strength between the conductive layer 87 and the light emitting element 85 can always be high, and the light emitting element 85 can be firmly fixed to the long-term. On the conductor layer 87. As a result, the electrical connection between the electrode 86 of the light emitting element 85 and the conductor layer 87 can be made reliable for a long period of time, and the life of the light emitting device can be extended. Further, it is preferable that the side surface of the convex portion 89 is inclined so as to expand outward toward the base 81 side. With such a configuration, the air in the corner portion of the side surface of the convex portion 89 and the upper surface of the base body 8 1 can easily escape, preventing air from entering the corner portion, and effectively preventing the conductive adhesive material 88 and the light-transmitting member 83. Voids are generated on the surface, and the air in the voids expands due to temperature changes and the like, causing peeling or cracking. Moreover, the inclined side surface outside the convex portion 89 can reflect light to the upper side well, and can improve the light emitting efficiency. As in the eighth embodiment of the present invention, it is preferable that the reflectance of the convex portion 89 with respect to light emitted from the phosphor included in the light emitting element 85 and the light transmitting member 83 is 60% or more. The light-emitting element 85 is connected to an electrode 86 provided below the conductive element 85 by a conductive adhesive material 88 such as Agf or gold (Au) _tin (Sn) solder. Moreover, like the second embodiment of the present invention, the conductive layer 87 is preferably a metal having excellent corrosion resistance such as Ni4Au 95381 in a thickness of about 1 to 20 μm. doc 200527716 covers its exposed surface. The reflecting member 82 is mounted on the upper surface of the base 81 using a solder material such as solder or Ag solder, or a bonding material such as an epoxy resin. The reflection member 82 is formed with a through hole 82a in a central portion. It is preferable that the inner peripheral surface of the through-hole 82a serves as a reflective surface 82b that effectively reflects light emitted from the light emitting element 85 and the phosphor. The reflective surface 82b is formed in the same manner as the second embodiment of the present invention, and description thereof is omitted. In addition, the arithmetic average roughness of the surface of the reflecting surface 82b may be from 0.004 to 4 μm, as in the second embodiment of the present invention. Therefore, the reflecting surface 82b can efficiently emit light from the light emitting element 85 and the phosphor. reflection. In addition, the reflection surface 82b includes, for example, the shape of its longitudinal cross-section, such as a linear inclined surface as shown in FIG. 14 that expands outward as it goes upward, a curved inclined surface or rectangular surface that expands outward as it goes upward. . As described above, the light-emitting element storage package of the present invention is configured to place the light-emitting element 85 on the mounting portion 81 & and to electrically connect the conductive layer 87 with a conductive adhesive material, and cover the light-emitting element with a light-transmitting member 83. 85, thereby forming a light emitting device 80. The translucent member 83 of the present invention is made of a transparent resin such as epoxy resin or silicone resin. The light-transmitting member 83 is filled inside the reflective member 82 with an injection machine such as a dispenser, and is heat-cured with a baking oven or the like so as to cover the light-emitting element 85. Further, the light-transmitting member 83 may include a light-emitting element 85 A phosphor that converts light to wavelengths. 95381. doc-54-200527716 The upper surface of the light-transmitting member 83 may have a convex shape as shown in FIG. 14. This makes it possible to make the light emitted from the light emitting element 85 in various directions approximate the length of the light path passing through the translucent member 83, and it is possible to effectively suppress the occurrence of unevenness in radiation intensity. Fig. 17 is a sectional view showing a light emitting device 90 of a tenth embodiment of the present invention. The light-emitting device 90 is mainly composed of a base 91, a reflective member 92, a light-transmitting member 93 containing a phosphor 94, and a light-emitting element 95. This light-emitting device can direct light emission from the light-emitting element 95 to emit light to the outside. The base body 91 in the present invention is made of alumina ceramic, aluminum nitride sintered body, mullite sintered body, glass ceramic or other ceramic or epoxy resin, or Fe-Co alloy, Cii-W, A1, etc. Made of metal. The base 91 has a function of placing and fixing a reflecting member 92 having a mounting portion 92d on which the light-emitting element% is mounted on the upper main surface. In the case where the substrate 91 is made of ceramic, as in the above embodiment, the average particle diameter of the crystal grains of the preferred ceramic is 1 to 5 µm. The reflecting member 92 is mounted on the base 91 using a solder material such as solder or Ag solder or a bonding material such as an adhesive such as epoxy resin. On the reflection member 92 ', a convex mounting portion 92b on which the light emitting element 95 is placed on the upper portion of the central portion of the upper main surface is formed. Further, on the reflecting member 92, a side wall portion 92a is formed on the outer peripheral portion of the upper main surface and surrounds the mounting portion 92b and uses the peripheral surface as a reflecting surface 92c for reflecting light emitted from the light emitting element 95. As a result, not only the light from the light emitting element 95 can be wavelength-converted by the phosphor 94 and directly radiated to the outside, but also light emitted from the light emitting element 95 to the lateral direction or the like can be emitted by the reflecting surface 92c or emitted from the phosphor 94. The light to the outside is 95381 uniformly. doc -55- 200527716 reflection can effectively improve the brightness and brightness of the axis and even color reproducibility. The reflecting member 92 is made of alumina ceramic, aluminum nitride sintered body, mullite sintered body, glass ceramics, or other ceramic materials, or resin such as epoxy resin, or Fe-Ni-Co alloy, Cu_W, or A1. The structure is formed by performing a cutting process, a mold forming, or the like. Further, the reflective surface 92c may be formed by performing cutting processing or die molding on the inner peripheral surface of the side wall portion 92 of the reflective member 92, or may be formed on the inner peripheral surface of the side wall portion 92a by, for example, plating or vapor deposition. A b Ag, Au, platinum (pt), titanium (Ti), chromium (Cr), Cu and other high-reflectivity metal thin films to form a reflective surface 92c. When the reflective surface 92c is made of a metal that easily discolors due to oxidation such as Ag or Cu, it is preferable that the reflective surface 92c be sequentially formed on the surface by electrolytic plating or electroless plating, as in the second embodiment of the present invention. The coating is, for example, a Ni plating layer having a thickness of about 1 to 10 μm and an Al plating layer having a thickness of about 0 to 3 μm. This can improve the corrosion resistance of the reflecting surface 92c. In addition, similar to the second embodiment of the present invention, the arithmetic average roughness Ra of the surface of the reflective surface 92b is preferred. In this way, the reflecting surface 92c can reflect the light of the light emitting element 95 and the phosphor 94 satisfactorily. The reflection surface 92c includes, for example, a straight-line incline of the light-emitting devices 90 and 90A of the tenth embodiment and the eleventh embodiment of the present invention shown in FIG. 17 and FIG. Such as a surface, a curved inclined surface that expands outward as it goes upward, or a rectangular surface of the present invention, such as the light emitting device 90b of the twelfth embodiment of the present invention shown in FIG. 95381. doc -56- 200527716 The reflecting surface 92c of the present invention is located at the light path 99 connecting the corners between the top surface 92d and the side surfaces of the light emitting portion 98 and the mounting portion 92b of the light emitting element 95 at the lower end, or is located further than the light path 99 Underside. Accordingly, the reflecting surface 92c can effectively reflect the direct light emitted from the light emitting element 95 in the lateral or lower direction, and the intensity of the radiated light can be made extremely high. Furthermore, the light emitting element 95 is placed on the upper surface 92d of the placement portion 92b, and the electrode of the light emitting element 95 and the electrode formed on the upper surface 92d of the placement portion 92b or an electrode composed of a part of a wiring conductor formed on the base 91 Pad (pad) electrical connection. The electrode 塾 is led to the outside of the light-emitting device 90 (side and bottom of the substrate 91) through a wiring conductor (not shown) formed inside the substrate 9 and the reflective member 92, and is connected to an external circuit substrate. Thereby, the light-emitting element 95 can be electrically connected to an external circuit. Such electrode pads are formed, for example, by forming a metallized layer of a metal powder such as W, Mo, Cu, or Ag on the surface or inside of the base 91 or the reflective member 92, or by embedding pins such as Fe-Ni-Co alloy in the base 91 or The reflecting member 92 is provided by inserting input-output terminals made of an insulating member forming a wiring conductor and joining through-holes provided in the base 91 and the reflecting member 92. In addition, the “preferred one is that a metal having excellent corrosion resistance such as Ni or gold (Au) is coated on the exposed surface of the electrode pad or the wiring conductor with a thickness of about 1 to 20 μm,” which can effectively prevent the electrode pad or the wiring conductor. In addition, the connection between the light-emitting element 95 and the electrode pad can be made strong. Therefore, it is more preferable that the exposed surface of the electrode pad or the wiring conductor is sequentially covered with, for example, a nickel plating layer having a thickness of about 1 to 5 μm and an Au having a thickness of about 0 to 3 μm by electrolytic plating or electroless plating. Plating. 95381. doc -57- 200527716 Moreover, as for the mounting portion 92 b, the side surface of the mounting portion 92b may hang down toward the base 9m as shown in FIG. 17. In the case of diffused formation, the heat generated by the light-emitting element 95 can be efficiently transmitted downward from the placement portion 92b, the heat dissipation of the light-emitting element can be improved by%, and the workability of the light-emitting element 95 can be well maintained. When the reflecting member 92 is an insulating member, as shown in FIG. 17, the light-emitting 70 member 95 and the electrode pad formed on the upper surface 92 d of the mounting portion 92 b are bonded by flip-chip bonding using a metal protrusion (electric connection mechanism 96) or the like. The connection method is electrically connected. Although not shown in FIG. 17, if an electrode pad is formed on the reflective member 92, a wire bonding method such as a gold wire (electrical connection mechanism 96) may be used. A flip-chip bonding method is preferred. Since the electrode pad can be provided directly under the light-emitting element 95, it is not necessary to provide a space on the outer surface of the light-emitting element 95 on the base 91 to set a pattern for electrical connection. As a result, light emitted from the light-emitting element 95 can be efficiently suppressed by being absorbed by the space for the pattern for electrical connection of the base 91, and the light intensity on the axis can be reduced. In addition, in the case where the base body 91 is an insulating member, as shown in FIG. 8, the better one is formed around the mounting portion 92 b of the reflective member 92 made of an insulating member or a metal member, and penetrates the upper and lower main surfaces and is more light-resistant. The route is also located in the lower through-hole 97, and the electrode of the light-emitting element 95 and the wiring conductor on the base 91 are electrically connected by a lead wire (electrical connection mechanism 96 ') through the through-hole 97. As a result, the direct light emitted from the light emitting element 95 is reflected by the reflecting surface 92c at a position higher than the through hole 97 provided on the reflecting member 92 for passing the lead 96 ', and the direct light can be effectively prevented from entering the through hole. It is absorbed within 97, which can increase the radiation and light intensity. Also, the light emitting element 95 can be fully bonded to the reflection 95381. doc • 58- 200527716 The mounting portion 92b of the member 92 can transmit the heat of the light-emitting element to the reflecting member well, which can further improve the heat radiation property. The depth of the through hole 97 (i.e., the thickness of the bottom of the reflecting member 92) and the hole diameter of the through hole 97 are appropriately selected in consideration of the thermal expansion difference from the base body 91 and the thermal conductivity of the light emitting element 95. In addition, the reflecting member "the thickness of the bottom portion can be appropriately selected even in the case shown in Fig. 17. The average reflectance of the crystal grains contained in the ceramic is 1 to 5 to increase the reflectance of the base body 91." Light is effectively suppressed from leaking out from the through-hole 97 formed in the reflecting member 92 for passing through the wire 96, and is absorbed by the base 91. The through-hole 97 is as shown in the light-emitting device 90C of the thirteenth embodiment of the present invention in FIG. It is preferable that the inside is filled with an insulating paste 97a containing insulating light-reflecting particles so as to be flush with the upper main surface of the reflecting member 92. Therefore, even if light emitted from the light-emitting element 95 and the phosphor 94 enters The through-holes 97 can also be effectively reflected to the upper side by light-reflecting particles, which can make light characteristics such as wheel intensity, on-axis luminosity or brightness, and color reproducibility good. The light-reflecting particle system included in the insulation-poor 97a Materials that contain Ca, Ti, Ba, Al, Si, Mg, κ, and 0 in compositions such as barium sulfate, calcium carbonate, and oxidized sulphur dioxide, preferably have a total reflectance on the surface. From this, you can make The light emitting device has good light characteristics such as radiant intensity, on-axis luminosity, brightness, color reproducibility, etc. The light-transmitting member 93 is made of a transparent resin such as epoxy resin or silicone resin, or glass, and can contain light from the light-emitting element 95. The wavelength-converted camper body 94 ° translucent member 93 is filled with an injection machine such as a dispenser and the reflection 95381 is filled. doc -59- 200527716 The inside of the member 92 is heat-cured with a baking oven or the like so as to cover the light-emitting element 95. Thereby, the light from the light emitting element 95 can be wavelength-converted by the phosphor 94 to extract light having a desired wavelength spectrum. In addition, the 'light-transmitting member 93 is provided so that the interval X between the upper surface and the light-emitting portion of the light-emitting element 95 is 0.1 to 0. 5 mm. As a result, the light emitted from the light-emitting element 95 can be efficiently wavelength-converted by the phosphor 94 included in the light-transmitting member 93 with a constant thickness above the light-emitting portion of the light-emitting element 95. Without being disturbed by the phosphor 94, the light can be directly emitted to the outside of the light-transmitting member 93. As a result, it is possible to increase the radiation intensity 'of the light-emitting device, and to make optical characteristics such as on-axis brightness, brightness, and color reproducibility good. As shown in FIG. 21, the interval X between the light-emitting portion of the light-emitting element 95 and the surface of the light-transmitting member 93 is 0. In the case of a length of 5 mm, although the phosphor 94 (the phosphor 94 indicated by the oblique line) adjacent to the light emitting element 95 can directly excite the light of the light emitting element 95 and perform wavelength conversion, it is difficult to convert the wavelength-converted light. Release directly to the outside of the light-transmitting member 93. That is, the phosphor 94 (the phosphor 94 other than the oblique line portion in FIG. 21) near the surface of the light-transmitting member 93 hinders the progress of light, making it difficult to make the brightness on the external axis good. On the other hand, as shown in FIG. 22, when the distance X between the light-emitting portion of the light-emitting element 95 and the surface of the light-transmitting member 93 is shorter than 0.1 mm, it is difficult to efficiently perform light conversion of the light-emitting element 95. For this reason, light having a low visibility that has transmitted through the translucent member 93 without wavelength conversion increases, and it is difficult to make optical characteristics such as on-axis luminance, brightness, and color reproducibility good. The upper surface of the light-transmitting member 93 is preferably formed in a convex shape as shown in Fig. 17. Thus, even for obliquely upward 95381 from the light emitting element 95. doc -60- 200527716 For light emitted, the distance between the light-emitting portion and the surface of the light-transmitting member 93 can be set to 0. 1 ~ 0. 5 mm can further increase the radiation intensity. In addition, the light-emitting devices 41, 50, 60, 60A, 60B, 60C, 60D, 70, 80, 90, 90A, 90B, and 90C of the present invention are configured so that one device has a predetermined configuration, or For example, a circular shape or a polygonal shape composed of a plurality of light emitting devices 41, 50, 60, 60A, 60B, 60C, 60D, 70, 80, 90, 90A, 90B, and 90C is provided. A plurality of groups of light-emitting devices are formed in a predetermined arrangement such as a concentric shape, so that a lighting device can be obtained. Therefore, since the light emission generated by the recombination of the electrons of the light-emitting elements 44, 55, 65, 75, 85, and 95 made of a semiconductor is used, it can consume less power and be more durable than a conventional lighting device using a discharge. It becomes a small lighting device with less heat generation. As a result, variations in the central wavelength of light generated from the light emitting elements 44, 55, 65, 75, 85, and 95 can be suppressed, and light can be irradiated at a stable radiation intensity or radiation angle (light distribution) for a long period of time. An illumination device capable of suppressing color unevenness and deviation of the illuminance distribution on the irradiation surface is provided. Moreover, the light emitting devices 41, 50, 60, 60A, 60B, 60C, 60D, 70, 80, 90, 90A, 90B, and 90C of the present invention are provided as a light source in a predetermined arrangement, and the light emitting devices 41, 5 〇, 6〇, 60A, 60B, 60C, 60D, 70, 80, 90, 90A, 90B, 90C are provided with reflective tools or optical lenses, light diffusion plates, etc., which are designed to have any shape. The lighting device can be made to radiate light with an arbitrary light distribution. For example, as shown in the plan and sectional views of FIGS. 23 and 24, a plurality of light emitting devices 41, 50, 60, 60A, 60B, 60C, 60D, 70, 80, and 95381 are used. doc -61-200527716 90, 90A, 90B, 90C are arranged in multiple rows on the light-emitting device drive circuit substrate 101, and 50, 60, 60A, 60B, 60C, 60D, 70, 80, 90, In the case where a lighting device made of the reflecting tool 100 having an optical design with an arbitrary shape is provided around 90A, 90B, and 90C, a plurality of light-emitting devices 41, 50, 60, 60A, and 60B are arranged in adjacent rows. Among 60C, 60C, 60D, 70, 80, 90, 90A, 90B, and 90C, it is preferable to make adjacent light-emitting devices 41, 50, 60, 60, 80, 606, 60 (:, 600, 70, 80, The so-called zigzag arrangement in which the intervals between 90, 90A, 90B, and 90C are not shortest. That is, the light emitting devices 41, 50, 60, 60A, 60B, 60C, 60D, 70, 80, 90, 90A, 90B, When 90C is arranged in a lattice, the light emitting devices 41, 50, 60, 60A, 60B, 60C, 60D, 70, 80, 90, 90A, 90B, and 90C which are light sources are aligned in a straight line, thereby increasing glare, By making such a lighting device enter human vision, it is easy to cause unpleasant feelings or obstacles to the eyes. By contrast, by making it zigzag Therefore, glare can be suppressed, and the discomfort to the human eye or the obstacle to the eye can be reduced. Furthermore, by increasing the adjacent light emitting devices 41, 50, 60, 60A, 60B, 60C, 60D, 70, 80, 90, 90A, 90B The distance between 90C and 90C can effectively suppress the thermal interference between adjacent light-emitting devices 41, 50, 60, 60A, 60B, 60C, 60D, 70, 80, 90, 90A, 90B, 90C, and suppress the installation of light-emitting devices. 41, 50, 60, 60A, 60B, 60C, 60D, 70, 80, 90, 90A, 90B, 90C The light in the driving circuit substrate 101 is not smooth, and can be effectively transmitted to the light emitting devices 41, 50, 60. , 60A, 60B, 60C, 60D, 70, 80, 90, 90A, 90B, 90C external radiation heat. As a result, long-term optical characteristics 95381 can be produced even with small obstacles to the human eye. doc • 62- 200527716 stable and durable (long life) lighting device. In addition, as shown in the plan views and cross-sectional views of the lighting device, as shown in the plan and sectional views of FIGS. 25 and 26, a plurality of light-emitting devices 41, 50, 60, 60A, 60B, 60C, 60D, In the case of a group of circular or polygonal light-emitting devices composed of 70, 80, 90, 90A, 90B, and 90C, when multiple groups are formed as concentric lighting devices, one is preferably arranged in a circle. The number of the light-emitting devices 41, 50, 60, 60A, 60B, 60C, 60D, 70, 80, 90, 90A, 90B, 90C in the shape of the light-emitting device group in a shape of a polygon or a polygon is on the outer peripheral side than the center of the lighting device Many sides. As a result, it is possible to arrange more light emitting devices 41, 50 while maintaining a proper interval between the light emitting devices 41, 50, 60, 60A, 60B, 60C, 60D, 70, 80, 90, 90A, 90B, and 90C. , 60, 60A, 60B, 60C, 60D, 70, 80, 90, 90A, 90B, 90C can further improve the illuminance of the lighting device. In addition, the density of the light emitting devices 41, 50, 60, 60A, 60B, 60C, 60D, 70, 80, 90, 90A, 90B, and 90C in the central portion of the lighting device can be reduced, and the light-emitting device drive circuit board can be suppressed. 10 1 a Thermal impediment in the central part. As a result, the temperature distribution in the driving circuit substrate 1 0 1 a of the light-emitting device becomes the same, and heat can be efficiently transmitted to the external circuit board or the heat-absorbing device provided with the lighting device, and the light-emitting devices 41, 50, 60, and 60 can be suppressed. The temperature of 60A, 60B, 60C, 60D, 70, 80, 90, 90A, 90B, 90C increased. As a result, the light-emitting devices 41, 50, 60, 60A, 60B, 60C, 60D, 70, 80, 90, 90A, 90B, 90C can be stable for a long period of time, and durable lighting devices can be manufactured. Examples of such lighting devices include general lighting 95381 for indoor or outdoor use. doc -63- 200527716 Lighting fixtures, chandelier lighting fixtures, residential lighting fixtures, office lighting fixtures, shop fittings, display lighting fixtures, road lighting fixtures, induction light fixtures and signaling devices, stages and performances Room lighting fixtures, advertising lights, lighting poles, underwater lighting lights, flasher lights, spotlights, security lights embedded in electric poles, emergency lighting fixtures, arms in electric lamps, electro-optic notice boards, etc. or Backlights for dimmers, automatic extinguishers, displays, moving devices, decorations, light switches, light sensors, medical lamps, car lights, etc. [Examples] [Example 1] Examples of the light-emitting device 41 according to the first embodiment of the present invention will be described below. First, an oxide ceramic substrate composed of crystal grains of various particle diameters to be the substrate 42 is prepared. In addition, a wiring conductor for electrically connecting the light emitting element 44 and an external circuit board via an internal wiring formed inside the base body 42 is formed around the mounting portion 42a on which the light emitting element 44 is mounted. In addition, the Lu wiring conductor on the base 42 is formed of a metalized layer composed of Mo-Mn powder into a circular pad having a diameter of oj mm, and the surface is sequentially covered with a plating layer having a thickness of 3 ㈤ and an Au having a thickness of 2 μm. Plating. The internal wiring inside the base body 42 is formed by an electrical connection portion made of a Beton conductor, a so-called through hole. The through-holes are also formed using a metalized conductor made of Mo-Mn powder in the same manner as the wiring conductor. · Next 'using Ag paste will emit near ultraviolet light with a thickness of 0. 〇8 mm light emitting element 44 is mounted on the mounting portion 42a, and 95381 by bonding leads made of Au. doc -64-200527716 The light emitting element 44 is electrically connected to the wiring conductor. Next, the dispenser is covered around the extruded one-by-one vane 44 with a glory body resin which is excited by the light of the light emitting member 4 and is ordered to emit yellow light. < Permeable member 45), which was thermally cured, and a light-emitting device η was prepared as a sample, and the light output was measured. Furthermore, the filling ratio (mass: 〆) of the glazed body with respect to the Shixi resin meter is uniformly dispersed. As the phosphor, a yellowish phosphor having a garnet structure having an average particle diameter of L5 to 80 mm and having a garnet structure was used. When the average particle diameter of the crystals of the Taunman of the substrate 42 is about 10 µΐη, the light output is 14 mW. 'However, in the case where the average grain size of the crystal grains of the base 42 is 5 μηι, the light output is i7mw, compared with the average grain size of the crystal grains of the ceramics being about 10%. Above 20%. That is, compared with the case where the average grain size of the ceramic crystal grains is about 10 '', by using a matrix having an average grain diameter of 竟 5㈣ ceramics, it is considered to effectively suppress the light entering the human base 42 ㈣, and The number of phosphors scattered by light on the surface of the substrate M and irradiated with the light increases, and the light output increases. In addition, in the case where the current value is increased in order to increase the light output of the light emitting device 41, it has been confirmed that it is possible to effectively suppress the decrease in the light emission efficiency of the substrate having an average particle diameter of 5 ° relative to the clockwise current. [Example 2] Next, the light-emitting device having the same structure as that of the above-mentioned example and the average particle diameter of the talon crystal grains after sintering of the substrate 42 was 1 (_), 5 (μηι), and ig (㈣) 95381.doc -65- 200527716 Set 41 'Measured the full beam (light output) ° with respect to the load current to the light-emitting element 44 and' The light-emitting device 41 is installed in a heat-dissipating device with the same cooling function everywhere, and the light output is measured with an integrating sphere The results are shown in Fig. 7. As shown in Fig. 27, when the rated current of the load current to the light-emitting element 44 is 20 (mA) and the rated voltage is 3 · 4 (ν), The light output of the light-emitting device 41 having an average particle control of 1 (μιη) becomes 0.90 m), and the light-emitting efficiency is 14 (lm / W). In addition, the light output of the light-emitting device 41 having an average particle diameter of 5 cm (Tm) was 0.8 (lm) and the light-emitting efficiency was. In contrast, the light output of the light-emitting device 41 having an average crystal grain size of 10 (µm) of the ceramic becomes 0.55 (lm), and the luminous efficiency is 8 (lm / w). That is, the light output of the light-emitting device 41 at the rated current is a light-emitting device 41 having an average grain size of 5 or more compared to an average grain size of the crystal grains of the ceramic of the base body 42 being 10 (μηι). (The light output is increased by 45 ~ 74C%).

即，通過使基體42的陶瓷的晶粒的平均粒徑爲1〜5μιη， 從而在有效地抑制進入篡艚4?肉加ΛΑ、丨， ^ 究的晶粒而在 以幾乎完全散： 照射填充於框‘ 數量增加，從 升，螢光體的： 使基體42的陶； 爲白熾燈的發 光源而實用化。 而使負載電流 此外’在爲了使發光裝置41的光輪出提高 95381.doc -66 - 200527716 曰加時，在基體42的陶兗的晶粒的平均粒徑大的情況下， 在比l〇G(mA)還低的電流值附近無法看到與負載電流成正 匕的光輸出的上升。與此相肖，通過減小陶免的晶粒的平 均粒徑，從而光輸出與電流成正比地上升至大的電流爲 止特別疋通過使平均粒徑爲i _，從而發光裝置4 i的光 輸出成正比地上升至丨丨〇 mA附近爲止。即，通過減小基體 42的陶瓷晶粒的平均粒徑，從而基體42内部的熱擴散性提 咼’可以抑制發光元件44的負載電流所導致的溫度上升， 可以抑制發光元件的發光效率的劣化。 進而’針對相對於發光裝置41的負載電流的發光元件44 的峰值波長，在改變陶瓷的晶粒的平均粒徑，製作發光裝 置41並進行測定時，知道了通過使基體42的陶瓷的晶粒的 平均粒徑爲1 μπι，從而減小發光元件44的峰值波長的變 動。由此，可以抑制依存於發光元件的峰值波長的螢光體 的變換效率。又，在發光裝置41由激勵光譜不同的多個螢 光體構成的情況下，可以抑制發光元件44的峰值波長的變 動而産生的螢光體的變換效率的變動。其結果，可以抑制 混合來自多個螢光體的激勵光並輸出的發光裝置41的光的 顏色的變動。例如，在螢光體由紅色螢光體、藍色螢光體、 綠色螢光體構成，發光元件44的峰值波長根據負載電流變 動的情況下，紅色螢光體、藍色螢光體、綠色螢光體的發 光強度通過發光元件44的峰值波長而以各自的特性進行變 動，並由發光裝置41輸出。即，來自紅色螢光體、藍色螢 光體、綠色螢光體的激勵光的混合光中的光強度的比例變 95381.doc -67- 200527716 動，輸出光的色調變動， 無法得到所希望的色調的光That is, by making the average grain size of the crystal grains of the ceramics of the base body 1 to 5 μm, the crystal grains that have been effectively prevented from entering the substrate are scattered almost completely: irradiation filling The number of frames increases, from liters, to phosphors: the pottery of the substrate 42; practical for a light source for incandescent lamps. In addition, to increase the load current, in order to increase the light output of the light-emitting device 41 by 95381.doc -66-200527716, when the average particle size of the crystal grains of the ceramic body of the substrate 42 is large, the ratio is greater than 10 G. (mA) The increase in light output that is positively correlated with the load current cannot be seen near the low current value. In contrast, by reducing the average particle diameter of the ceramic particles, the light output rises to a large current in proportion to the current. In particular, by making the average particle diameter i_, the light of the light-emitting device 4 i The output rises proportionally to near 丨 丨 mA. That is, by reducing the average particle diameter of the ceramic crystal grains of the base body 42, the thermal diffusivity inside the base body 42 can be reduced, and the temperature rise caused by the load current of the light emitting element 44 can be suppressed, and the degradation of the light emitting element's light emitting efficiency can be suppressed . Furthermore, when the peak wavelength of the light-emitting element 44 with respect to the load current of the light-emitting device 41 was changed, the average particle size of the crystal grains of the ceramic was changed, and the light-emitting device 41 was manufactured and measured. The average particle diameter of SiO 2 is 1 μm, thereby reducing fluctuations in the peak wavelength of the light-emitting element 44. This can suppress the conversion efficiency of the phosphor depending on the peak wavelength of the light emitting element. Further, when the light emitting device 41 is composed of a plurality of phosphors having different excitation spectra, it is possible to suppress variations in the conversion efficiency of the phosphors due to variations in the peak wavelength of the light emitting element 44. As a result, it is possible to suppress a change in the color of light of the light emitting device 41 in which excitation light from a plurality of phosphors is mixed and output. For example, when the phosphor is composed of a red phosphor, a blue phosphor, and a green phosphor, and the peak wavelength of the light-emitting element 44 varies depending on the load current, the red phosphor, the blue phosphor, and the green The light emission intensity of the phosphor is changed by the peak wavelength of the light emitting element 44 with its own characteristics, and is output by the light emitting device 41. In other words, the ratio of the light intensity in the mixed light of the excitation light from the red phosphor, the blue phosphor, and the green phosphor changes to 95381.doc -67- 200527716, and the color tone of the output light varies, and the desired result cannot be obtained. Shades of light

及照明特性的 適用於照明用或顯示用的發光裝置。 1 μπι，從而 抑制輸出的光的 【實施例3】 根據圖7,針對本發明的第六實施方式的發光裝置6〇c 以下示出實施例。 首先’準備成爲基體61的氧化链陶究基板。而且，基體 61 —體地形成具有安放部61a的凸部61b，使安放部61a的上 面與安放部61a以外的部位的基體61的上面平行。 基體61在直徑0.8 mmx厚度0.5 mm的圓柱板的上面中央 部上形成了直徑〇·4 mmx厚度（各種值）的圓柱狀的凸部6113。 又’在凸部61b的安放發光元件65的安放部61a上，形成 通過形成於基體61内部的内部配線而用來電連接發光元件 65與外部電路基板的電連接用圖案。電連接用圖案由 Mo-Mn粉末構成的金屬化層成型爲直徑〇.丨min的圓形墊， 其表面上依次被覆了厚度3 μπι的Ni電鍍層和厚度2 μηι的 Αιι電鍍層。此外，基體61内部的内部配線由貫通導體構成 的電連接部、所謂的通孔來形成。對於該通孔，也與電連 接用圖案同樣，用由Mo-M粉末構成的金屬化導體成型。 又，在基體61上面的凸部6 lb以外的整個部位上形成用來 利用An-錫（Sn)焊料接合基體61和反射構件62的接合部。該 接合部在Mo-Mn粉末構成的金屬化層的表面上被覆厚度3 9538l.doc •68- 200527716 μπι的Ni電鍍層和厚度2 μιη的電鍍層。 ， 進而，準備了反射構件62。該反射構件62，在如圖7所示 · 的縱剖面中，具有内周面爲矩形的貫通孔62a，使該貫通孔 62a的内周面的表面成爲以爲〇1 μιη的反射面62b。 此外，反射構件做成爲：外形的直徑爲〇·8 mm，高度爲 1.0 mm，上側開口的直徑爲〇 8 mm，下側開口的直徑爲〇 5 mm，反射面62b的下端62c的高度（下側開口周圍的反射構 件62的厚度L)爲0· 15 mm的圓柱狀。 次之，在發出近紫外光的厚度爲0.08 mm的發光元件65 · 中設置Au-Sn突起（電極66)，通過該八…以突起將發光元件 65接合在電連接用圖案上，並且用Au-sn焊料將反射構件62 接合在基體61上面的接合部上。發光元件65的發光部的與And lighting characteristics Suitable for lighting or display light-emitting devices. 1 μm to suppress the output light [Example 3] The light-emitting device 60c according to the sixth embodiment of the present invention will be described below with reference to Fig. 7. First, an oxidation-chain-ceramic substrate to be the substrate 61 is prepared. Further, the base body 61 is formed integrally with a convex portion 61b having a mounting portion 61a so that the upper surface of the mounting portion 61a is parallel to the upper surface of the base body 61 at a position other than the mounting portion 61a. In the base 61, a cylindrical convex portion 6113 having a diameter of 0.4 mm × thickness (various values) is formed on the upper center portion of a cylindrical plate having a diameter of 0.8 mm × thickness of 0.5 mm. Further, a pattern for electrical connection for electrically connecting the light-emitting element 65 to an external circuit board is formed on the mounting portion 61a on which the light-emitting element 65 is placed on the convex portion 61b by internal wiring formed inside the base 61. The pattern for electrical connection is made of a metalized layer composed of Mo-Mn powder into a circular pad with a diameter of 0.1 mm, and its surface is sequentially covered with a Ni plating layer with a thickness of 3 μm and an Al plating layer with a thickness of 2 μm. The internal wiring inside the base body 61 is formed by an electrical connection portion formed of a through conductor, a so-called through hole. The through-holes are also formed using a metalized conductor made of Mo-M powder in the same manner as the pattern for electrical connection. In addition, a joint portion for joining the base body 61 and the reflecting member 62 with An-tin (Sn) solder is formed on the entire portion other than the convex portion 6 lb on the upper surface of the base body 61. This junction was coated on the surface of the metallization layer made of Mo-Mn powder with a thickness of 3 9538l.doc • 68- 200527716 μm Ni plating layer and a 2 μm thickness plating layer. Further, a reflecting member 62 is prepared. The reflecting member 62 has a through hole 62a having a rectangular inner peripheral surface in a longitudinal section as shown in FIG. 7, and a surface of the inner peripheral surface of the through hole 62a is a reflecting surface 62b having a thickness of 0.001 μm. In addition, the reflecting member has a diameter of 0.8 mm, a height of 1.0 mm, a diameter of the upper opening of 0 mm, a diameter of the lower opening of 0 mm, and a height of the lower end 62c of the reflecting surface 62b (lower The thickness L) of the reflecting member 62 around the side opening is a cylindrical shape of 0. 15 mm. Next, an Au-Sn protrusion (electrode 66) is provided in the light-emitting element 65 · having a thickness of 0.08 mm that emits near-ultraviolet light, and the light-emitting element 65 is bonded to the pattern for electrical connection with the protrusion, and Au is used. The -sn solder joins the reflective member 62 to a joint portion above the base body 61. Of the light emitting part of the light emitting element 65

Au-Sn犬起的下面的咼度，即從安放部61a到發光部的的高 度約爲0.03 mm。 次之’通過用分配器將含有進行紅色發光、綠色發光、 藍色發光的3種螢光體64的矽樹脂（透光性構件63)一直填充 鲁 到被基體61和反射構件62包圍的區域的反射構件62的内周 面的最上端’從而做成作爲樣本的發光裝置6〇c。 而且’通過將凸部61 b的厚度做成各種值，從而改變發光 元件65的發光部距離基體61的高度用凸部61b的 厚度和從安放部61a到發光部69的高度〇.〇3 mm的和表 示）。而且，發光元件65的發光部69和透光性構件63的上面 · 的間隔X(mm)可以用從作爲透光構件63的上面與基體61的 距離的1.0 mm中減去H(mm)的值來表示。 95381.doc -69- 200527716 在圖28中示出測定了相對Η及X的各樣本的軸上光度的 結果。根據圖28的曲線圖，可知：相對於Η爲0.1〜0.15 mm 時（發光部爲反射面62b的下端62c的高度〇· 15 mm以下時）轴 上光度小的情況，若Η變爲0 · 16 mm以上（發光部比反射面 62b的下知62c的局度0.15 mm大）’則轴上光度變得非常良 好。此乃因爲通過使發光部69比反射面62b的下端62c的高 度還高，從而可以用反射面62c良好地反射來自發光元件65 的光，反射效率變高的緣故。 進而，可知雖然增大Η時，轴上光度平穩地增大，但在x 爲0.1〜0·5 mm時軸上光度顯著提高。此乃因爲通過使發光 部69與透光性構件63的上面的間隔成爲適度的大小，從而 從發光元件65發光的光由螢光體64以高的效率進行波長變 換’不會被其餘的螢光體64妨害，以高效率放出到透光性 構件63的外部。又，確認出該軸上光度顯著提高了的樣本 即使針對亮度或彩色再現性等也足夠。 【實施例4】 針對本發明的第十二實施方式的發光裝置9〇B，以下根據 圖19、圖2 9、圖3 0示出實施例。 首先，準備由外形爲2·5χ〇.8 mm、厚度爲〇·4 mm的四邊 形的板構成的氧化鋁陶瓷基板以作爲基體91。又，至於反 射構件92 ’係準備由外形爲2·5χ〇·8 _、厚度爲〇·4匪的 四邊形’在上側主面的中央部上具有直徑爲“匪)的圓柱 狀的安放部92b，位於安放部92b周圍的部位的厚度（上侧主 面與下側主面之間的距離）爲〇·2 mm，在外周部具有距離下 95381.doc 200527716 側主面的高度爲1 ·〇 mm(距離上側主面的突出高度〇8 · mm)、橫向厚度爲0.2 mm的框狀的侧壁部92a的A1構成的構 · 件。而且，側壁部92a的與基體91垂直的内周面作爲算術平 均粗糙度Ra爲0.1 μπι的反射面92c。 又，從上面看，在四邊形的反射構件92的長邊方向上， 在安放部92b兩側的安放部92b與側壁部92a之間的部位上 每隔1個從上侧主面到下侧主面形成了貫通反射構件92的 貫通孔97。 ❿ 接下來，在基體91的上面的對應於貫通孔97底部的部位 的上’利用Μο-Μη粉末構成的金屬化層將由配線導體的一 部分構成的電極形成爲直徑〇·1 mm的圓形。而且，其表面 上依次被覆了厚度3 μπι的Ni電鍍層和厚度2 μιη的Au電鍍 層。又，基體91内部的配線導體通過由貫通導體構成的電 連接部、所謂的通孔形成。對於該通孔，也與電連接用圖 案同樣，用由Mo-M粉末構成的金屬化導體成型。 此外，在基體91的上面的外周部上，在整周形成利用Au_ φ 錫（Sn)焊料接合基體91和反射構件92用的接合部。該接合 部係在由Mo-Mn粉末構成的金屬化層的表面上被覆厚度3 μηι的Ni電鍍層和厚度2 μπι的Au電鍍層。 接著，用Au-Sn焊料將發出近紫外光的厚度爲〇〇8爪爪的 么光元件95接合在安放部92b的上面92d上，並且用Au-Sn 焊料將反射構件92接合在基體91上面的接合部上，進而用 · 金線引線接合發光元件95和位於貫通孔97底部的電極並電 · 連接。 95381.doc -71 - 200527716 而且’通過用分配器將含有進行紅色發光、綠色發光、 藍色發光的3種螢光體94的矽樹脂（透光性構件93)—直填充 到被基體9 1和反射構件92包圍的區域的反射構件92的内周 面的最上端，從而做成作爲樣本的發光裝置9〇B。 又，發光元件95的發光部98距離基體91的高度H(mm)， 通過改變安放部92b的高度，從而可以取各種值。透光性構 件93的上面與發光部之間的距離x(mm)用χ= 1〇_H表示。 又’如圖29所示，通過改變安放部92b的直徑L，從而可以 改變連接發光部與安放部92b的上面92d及侧面之間的角的 光路線99的角度。 在圖30中示出測定了相對於l及X的值的各樣本的軸上 光度的結果。根據圖30的曲線圖可知：軸上光量通過L與X 的關係而表現出光量的南低。即，在L不滿〇·3 mm的情況 下’考慮到光路線9 9比連接發光部9 8和反射面9 2 c的下端的 線還位於下側，來自發光元件95的直接光不向反射面92c傳 遞而係侵入到貫通孔97内部，從而反射效率降低。 此外’在L爲0.3 mm以上的光路線比連接發光部98與反射 面92c的下端的線還位於上側的情況下，即直接光不入射到 貫通孔97的情況下，可知軸上光度在乂爲〇1 mm〜〇5 mm 時顯著增大爲500 mcd。考慮此係因爲通過使發光部98與透 光性構件93的上面的間隔X爲適度大小，從而從發光元件95 發光的光由螢光體94以高效率進行波長變換，不會被其餘 的螢光體94所妨害’可以以高效率放出到透光性構件93的 外部的緣故。 95381.doc -72· 200527716 從以上其結果可以確認：在反射面92c的下端位於連接發 光部98和安放部92b的上面92d及侧面之間的角的光路線上 或比光路線還位於下側，並且透光性構件93的上面與發光 W 9 8之間的距離爲〇 ·丨〜〇 · 5 mm的情況下，顯示極爲優越的 轴上光度。而且，可以確認出該軸上光度顯著提高的樣本 即使對於亮度或彩色再現性等也是足夠的。 而且’本發明並不限於第一〜第十三實施方式及實施The height of the lower face of the Au-Sn dog, that is, the height from the mounting portion 61a to the light emitting portion is about 0.03 mm. Secondly, the silicone resin (translucent member 63) containing three kinds of phosphors 64 that emit red light, green light, and blue light is filled with a dispenser until the area surrounded by the base 61 and the reflective member 62 is filled. The uppermost end of the inner peripheral surface of the reflective member 62 is formed as a light emitting device 60c as a sample. Furthermore, by changing the thickness of the convex portion 61 b to various values, the thickness of the convex portion 61 b for the height of the light-emitting portion 65 from the base 61 and the height from the mounting portion 61 a to the light-emitting portion 69 is changed to 0.3 mm. And representation). The distance X (mm) between the light-emitting portion 69 of the light-emitting element 65 and the upper surface of the light-transmitting member 63 can be subtracted from H (mm) by 1.0 mm, which is the distance between the upper surface of the light-transmitting member 63 and the base 61. Value to represent. 95381.doc -69- 200527716 Fig. 28 shows the results of measuring the photometric values on the axis of each sample of Η and X. From the graph in FIG. 28, it can be seen that when the luminosity on the axis is small compared to when Η is 0.1 to 0.15 mm (when the light-emitting portion is the height of the lower end 62c of the reflecting surface 62b 0.15 mm or less), Η becomes 0 · 16 mm or more (the light emitting portion is larger than the local 0.15 mm of the bottom surface 62c of the reflecting surface 62b), the luminance on the axis becomes very good. This is because the light emitting portion 69 is made higher than the lower end 62c of the reflecting surface 62b, so that the light from the light emitting element 65 can be well reflected by the reflecting surface 62c, and the reflection efficiency becomes high. Furthermore, it can be seen that although the luminosity on the axis increases smoothly when Η is increased, the luminosity on the axis is significantly increased when x is 0.1 to 0.5 mm. This is because the distance between the light-emitting portion 69 and the upper surface of the light-transmitting member 63 is appropriately adjusted, so that the light emitted from the light-emitting element 65 is wavelength-converted by the phosphor 64 with high efficiency. The light body 64 interferes and is emitted to the outside of the light-transmitting member 63 with high efficiency. In addition, it was confirmed that a sample with significantly improved luminosity on this axis is sufficient even for brightness, color reproducibility, and the like. [Example 4] Examples of the light-emitting device 90B according to the twelfth embodiment of the present invention will be described below with reference to Figs. 19, 29, and 30. First, as the base body 91, an alumina ceramic substrate composed of a quadrangular plate having an outer shape of 2.5 x 0.8 mm and a thickness of 0.4 mm was prepared. In addition, as for the reflecting member 92, 'a quadrilateral having an outer shape of 2.5 x 0.08 mm and a thickness of 0.4 mm' is prepared to have a cylindrical mounting portion 92b having a diameter of "band" at the center of the upper main surface. The thickness (distance between the upper main surface and the lower main surface) of the part located around the mounting portion 92b is 0.2 mm, and the height of the main surface at the outer peripheral portion is 95381.doc 200527716. The height of the main surface is 1 · 〇. mm (a protruding height from the upper main surface of 0.8 mm) and a frame-shaped side wall portion 92a having a lateral thickness of 0.2 mm from A1. Also, the inner peripheral surface of the side wall portion 92a perpendicular to the base 91 The reflection surface 92c having an arithmetic average roughness Ra of 0.1 μm. In addition, when viewed from above, in the longitudinal direction of the quadrangular reflection member 92, the portion between the placement portion 92b and the side wall portion 92a on both sides of the placement portion 92b Through holes 97 are formed from the upper main surface to the lower main surface every other through hole. ❿ Next, the upper portion of the base body 91 corresponding to the bottom portion of the through hole 97 is used. The metallization layer made of Μη powder will consist of a part of the wiring conductor The electrode is formed in a circular shape with a diameter of 0.1 mm. The surface is sequentially covered with a Ni plating layer having a thickness of 3 μm and an Au plating layer having a thickness of 2 μm. The wiring conductor inside the base 91 is formed by a through conductor. Electrical connection portions and so-called through-holes are formed. The through-holes are also formed of a metalized conductor made of Mo-M powder in the same manner as the pattern for electrical connection. In addition, the outer peripheral portion of the upper surface of the base 91 is formed on the entire surface. A joint portion for bonding the base 91 and the reflective member 92 with Au_φtin (Sn) solder is formed around the periphery. The joint portion is covered with a 3 μηι Ni plating layer and a thickness on the surface of the metallized layer made of Mo-Mn powder. 2 μm Au plating layer. Next, a light-emitting element 95 having a thickness of 008 claws that emits near ultraviolet light is bonded to the upper surface 92d of the mounting portion 92b with Au-Sn solder, and the reflection is performed with Au-Sn solder. The member 92 is bonded to the bonding portion on the upper surface of the base 91, and then the light emitting element 95 and the electrode located at the bottom of the through hole 97 are electrically connected with gold wires. 95381.doc -71-200527716 get on Silicone (light-transmitting member 93) of three types of phosphors 94, which are color-emission, green-emission, and blue-emission—the inner peripheral surface of the reflective member 92 that fills the area surrounded by the substrate 91 and the reflective member 92 directly. At the top, a light-emitting device 90B is used as a sample. In addition, the height H (mm) of the light-emitting portion 98 of the light-emitting element 95 from the base 91 can be changed to various values by changing the height of the mounting portion 92b. The distance x (mm) between the upper surface of the sexual member 93 and the light emitting portion is represented by χ = 10_H. As shown in FIG. 29, by changing the diameter L of the mounting portion 92b, the angle of the light path 99 connecting the angle between the light emitting portion and the upper surface 92d and the side surface of the mounting portion 92b can be changed. Fig. 30 shows the results of measuring the photometric values on the axis of each sample with respect to the values of 1 and X. From the graph of FIG. 30, it can be seen that the amount of light on the axis shows a low south of the amount of light by the relationship between L and X. That is, when L is less than 0.3 mm, it is considered that the light path 9 9 is located on the lower side than the line connecting the light emitting part 98 and the lower end of the reflecting surface 9 2 c, and direct light from the light emitting element 95 is not reflected. The surface 92c transmits and penetrates the inside of the through-hole 97, thereby reducing the reflection efficiency. In addition, when the light path of L is 0.3 mm or more is higher than the line connecting the light emitting portion 98 and the lower end of the reflecting surface 92c, that is, when the direct light does not enter the through hole 97, it can be seen that the luminosity on the axis is 乂When it is 〇1 mm to 〇5 mm, it increases significantly to 500 mcd. This is considered because the distance X between the light-emitting portion 98 and the upper surface of the light-transmitting member 93 is moderately adjusted, so that the light emitted from the light-emitting element 95 is wavelength-converted by the phosphor 94 with high efficiency, and is not affected by the rest of the fluorescent light. The light body 94 interferes with the reason that it can be emitted to the outside of the light-transmitting member 93 with high efficiency. 95381.doc -72 · 200527716 From the above results, it can be confirmed that the lower end of the reflecting surface 92c is located on or below the light path at an angle between the upper surface 92d and the side surface connecting the light emitting section 98 and the mounting section 92b. In addition, when the distance between the upper surface of the light-transmitting member 93 and the light emission W 9 8 is 0 · 丨 ~ 0.5 mm, an extremely superior on-axis lightness is displayed. In addition, it was confirmed that a sample with significantly improved luminance on this axis is sufficient even for brightness, color reproducibility, and the like. Moreover, the present invention is not limited to the first to thirteenth embodiments and implementations

例’可以在不脫離本發明的宗旨的範圍内進行各種變更。 在本發明的第一實施方式中，例如用焊錫或黏接劑等將可 以係由發光裝置41放出的光任意聚光或擴散的光學透鏡或 平板狀的透光性蓋體接合在框體4 3的上面。由此，可以以Examples' can be modified in various ways without departing from the spirit of the present invention. In the first embodiment of the present invention, for example, an optical lens or a flat plate-shaped light-transmitting cover that can condense or diffuse light emitted from the light-emitting device 41 is bonded to the frame 4 with solder, an adhesive, or the like 3 above. From this, you can

所希望的角度取出光，並且可以改善向發光裝置41的内部 的耐浸水性，提高長期可靠性。又，框體43的内周面，其 剖面形狀可以係平坦（直線狀）或圓弧狀（曲線狀）。在做成圓 弧狀的情況下，可以使從發光元件44發光的光普遍反射， 將私向性咼的光均勻地反射到外部。又，在本發明的第一 第十實％方式中，爲了提局光輸出，可以在基體42、 1 71 81、91上設置多個發光元件44、55、γ 85、95。又，也能任意調整反射面43b、52b、62b、72b 82b 92c的角度或從反射面 43b、52b、62b、72b、82b、92c 的上端到透光性構件45、53、63、73、83、％的上面的距 離，由此，通過設置互補色區域，從而進一步可以得到良 好的彩色再現性。 此外，本發明的照明裝 置不僅係將多個發光裝置4 j 50、 9538l.doc -73- 200527716 60、60A、60B、60C、70、80、90、90A、90B、90C設置 爲規定的配置，也可以將1個發光裝置41、50、60、60A、 60B、60C、60D、70、80、90、90A、90B、90C設置爲規 定的配置。By taking out light at a desired angle, the water resistance to the inside of the light emitting device 41 can be improved, and long-term reliability can be improved. The cross-sectional shape of the inner peripheral surface of the frame 43 may be flat (straight) or arc-shaped (curved). In the case of an arc shape, the light emitted from the light-emitting element 44 can be generally reflected, and the light having a private property can be uniformly reflected to the outside. Further, in the first tenth real% mode of the present invention, a plurality of light-emitting elements 44, 55, γ 85, 95 may be provided on the substrates 42, 1 71, 81, and 91 in order to improve local light output. In addition, the angle of the reflecting surfaces 43b, 52b, 62b, 72b, 82b 92c or the upper end of the reflecting surfaces 43b, 52b, 62b, 72b, 82b, 92c to the light-transmitting members 45, 53, 63, 73, and 83 can be arbitrarily adjusted. The distance between the upper and lower sides can further improve the color reproducibility by providing a complementary color region. In addition, the lighting device of the present invention not only sets a plurality of light emitting devices 4 j 50, 9538l.doc -73- 200527716 60, 60A, 60B, 60C, 70, 80, 90, 90A, 90B, 90C to a predetermined configuration, One light emitting device 41, 50, 60, 60A, 60B, 60C, 60D, 70, 80, 90, 90A, 90B, 90C may be provided in a predetermined arrangement.

本發明在不脫離其宗旨或主要特徵之前提下，可以以各 種方式實施。因此，上述實施方式在某一點上來說僅係示 例’本發明的範圍係申請專利範圍中所公開的，並未局限 於說明書全文。進而，屬於申請專利範圍的變形或變更全 部皆係在本發明的範圍内。 【圖式簡單說明】 圖1係表示本發明的第一實施方式的發光裝置的剖面圖。 圖2係表示本發明的第二實施方式的發光裝置的剖面圖。 圖3 A係表示本發明的發光裝置中的導體層及凸部的一例 的放大平面圖，圖把係表示本發明的發光裝置中的導體層 及凸部的其他例的放大平面圖。The present invention may be implemented in various ways without departing from its spirit or main characteristics. Therefore, the above-mentioned embodiments are merely examples. The scope of the present invention is disclosed in the scope of patent application and is not limited to the entire description. Furthermore, all the deformations or changes belonging to the scope of patent application are within the scope of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing a light emitting device according to a first embodiment of the present invention. FIG. 2 is a cross-sectional view showing a light emitting device according to a second embodiment of the present invention. Fig. 3A is an enlarged plan view showing an example of a conductive layer and a convex portion in a light-emitting device of the present invention, and a figure is an enlarged plan view showing another example of a conductive layer and a convex portion in a light-emitting device of the present invention.

圖4係表不本發明的第三實施方式的發光裝置的剖面圖。 圖5係表示本發明的第四實施方式的發光裝置的剖面圖。 圖6係表示本發明的第五實施方式的發光裝置的剖面圖。 圖7係表不本發明的第六實施方式的發光裝置的剖面圖。 圖8係用來說明本發明的發光裝置中的透光性構件的上 面與發光部的間隔的剖面圖。 •係用來說明的本發明的發光裝置中的透光性構4 上面與發光部的間㉟的剖面圖。 圖1 〇係表示本發明& I月的第七實施方式的發光裝置的4 95381.doc •74- 200527716 圖。 圖1 1係表示本發明的第八實施方式的發光裝置的剖面 圖0 圖12A係表示本發明的發光裝置中的導體層及凸部的一 例的放大平面圖，圖12B係表示本發明的發光裝置中的導體 層及凸部的其他例的放大平面圖。 圖13A係表示本發明的發光裝置中的導體層及凸部的一 例的放大平面圖，圖13B係表示本發明的發光裝置中的導體 層及凸部的其他例的放大平面圖。 圖14係表示本發明的第九實施方式的發光裝置的剖面 圖。 圖15A係表示本發明的發光裝置中的導體層及凸部的一 例的放大平面圖，圖15B係表示本發明的發光裝置中的導體 層及凸部的另一例的放大平面圖。 圖16A係表示本發明的發光裝置中的導體層及凸部的實 施方式的-例的放大平面圖，圖16B係表示本發明的發光震 置中的導體層及凸部的實施方式的其他例的放大平面圖。 圖17係表示本發明的第十實施方式的發光裝置的剖面 圖。 圖1 8係表示本發明的第十一膏 ^ τ 頁苑方式的發光裝置的剖面 圖19係表不本發明的裳+ —杳^ Χ月的第十一實施方式的發光裝置的剖面 圖0 施方式的發光裝置的剖面 圖20係表示本發明的第十三實 95381.doc -75· 200527716 圖。 圖21係用來說明本發明的發光裝置中的透光性構件的上 面與發光部的間隔的剖面圖。 圖係用來5兒明本發明的發光裝置中的透光性構件的上 面與發光部的間隔的剖面圖。 圖3係表不本發明的第十四實施方式的照明裝置的平面 圖。 圖24係圖23的照明裝置的剖面圖。 圖25係表示本發明的第十五實施方式的照明裝置的平面 圖。 圖26係圖25的照明裝置的剖面圖。 圖27係表示本發明的第一實施方式的發光裝置的強度測 定其結果的圖。 圖28係表示本發明第六實施方式的發光裝置中的透光性 構件的上面與發光部的間隔和發光強度的關係的曲線圖。 圖29係表示圖19的發光裝置中的光路線的各種圖案的剖 面圖。 圖30係表示本發明的發光裝置中的安放部的長度乙、透光 性構件上面及發光部的間隔X和軸上光度的關係的曲線圖。 圖3 1係表示第一先前技術的發光裝置的剖面圖。 圖32係表示第二先前技術的發光元件收納用封裝的剖面 圖。 圖33係表示第三先前技術的發光裝置的剖面圖。 【主要元件符號說明】 95381.doc -76- 200527716 41, 5 0, 60, 60A，60B，60C，發光裝置 60D，70, 80, 90, 90A，90B，4 is a cross-sectional view showing a light emitting device according to a third embodiment of the present invention. FIG. 5 is a sectional view showing a light emitting device according to a fourth embodiment of the present invention. FIG. 6 is a sectional view showing a light emitting device according to a fifth embodiment of the present invention. FIG. 7 is a cross-sectional view showing a light emitting device according to a sixth embodiment of the present invention. Fig. 8 is a cross-sectional view for explaining the distance between the upper surface of the light-transmitting member and the light-emitting portion in the light-emitting device of the present invention. A cross-sectional view of the gap between the upper surface of the light-transmitting structure 4 and the light-emitting portion in the light-emitting device of the present invention for explanation. FIG. 10 is a view showing a light-emitting device according to a seventh embodiment of the present invention. FIG. 74-200527716. FIG. 11 is a cross-sectional view showing a light-emitting device according to an eighth embodiment of the present invention. FIG. 12A is an enlarged plan view showing an example of a conductive layer and a convex portion in a light-emitting device of the present invention. FIG. 12B is a light-emitting device of the present invention. An enlarged plan view of another example of the conductive layer and the convex portion in the. Fig. 13A is an enlarged plan view showing an example of a conductive layer and a convex portion in a light-emitting device of the present invention, and Fig. 13B is an enlarged plan view showing another example of a conductive layer and a convex portion in a light-emitting device of the present invention. Fig. 14 is a sectional view showing a light emitting device according to a ninth embodiment of the present invention. Fig. 15A is an enlarged plan view showing an example of a conductive layer and a convex portion in a light-emitting device of the present invention, and Fig. 15B is an enlarged plan view showing another example of a conductive layer and a convex portion in a light-emitting device of the present invention. FIG. 16A is an enlarged plan view showing an example of an embodiment of a conductive layer and a convex portion in a light-emitting device of the present invention, and FIG. 16B is a diagram showing another example of an embodiment of a conductive layer and a convex portion in a light emitting device according to the present invention; Zoom in on the floor plan. Fig. 17 is a sectional view showing a light emitting device according to a tenth embodiment of the present invention. FIG. 18 is a cross-sectional view showing a light-emitting device of the eleventh paste ^ τ page garden method of the present invention. FIG. 19 is a cross-sectional view of a light-emitting device of the eleventh embodiment of the present invention. A cross-sectional view 20 of the light-emitting device according to the embodiment is a view showing the thirteenth embodiment of the present invention, 95381.doc -75 · 200527716. Fig. 21 is a cross-sectional view for explaining the distance between the upper surface of the light-transmitting member and the light-emitting portion in the light-emitting device of the present invention. FIG. 5 is a cross-sectional view for illustrating the distance between the upper surface of the light-transmitting member and the light-emitting portion in the light-emitting device of the present invention. Fig. 3 is a plan view showing a lighting device according to a fourteenth embodiment of the present invention. FIG. 24 is a cross-sectional view of the lighting device of FIG. 23. Fig. 25 is a plan view showing a lighting device according to a fifteenth embodiment of the present invention. FIG. 26 is a cross-sectional view of the lighting device of FIG. 25. Fig. 27 is a graph showing the results of intensity measurement of the light emitting device according to the first embodiment of the present invention. Fig. 28 is a graph showing the relationship between the distance between the upper surface of the translucent member and the light-emitting portion and the light-emission intensity in the light-emitting device according to the sixth embodiment of the present invention. FIG. 29 is a cross-sectional view showing various patterns of light paths in the light-emitting device of FIG. 19. FIG. Fig. 30 is a graph showing the relationship between the length B of the mounting portion in the light-emitting device of the present invention, the distance X between the upper surface of the light-transmitting member and the light-emitting portion, and the luminance on the axis. FIG. 31 is a cross-sectional view showing a first prior art light-emitting device. Fig. 32 is a cross-sectional view showing a light emitting element housing package of the second prior art. Fig. 33 is a sectional view showing a third prior art light emitting device. [Description of main component symbols] 95381.doc -76- 200527716 41, 5 0, 60, 60A, 60B, 60C, light-emitting device 60D, 70, 80, 90, 90A, 90B,

90C 42, 51, 61，71，81，91 基體 42a，51a，61a，71a，81a， 安放部 92d 43 框體90C 42, 51, 61, 71, 81, 91 Substrates 42a, 51a, 61a, 71a, 81a, Placement section 92d 43 Frame

43b，52b，62b，72b，82b， 反射面43b, 52b, 62b, 72b, 82b, reflective surface

92c 44, 55, 65, 75, 85, 95 發光元件 45, 53, 63, 73, 83, 93 透光性構件 46, 69, 98 發光部 52, 62, 72, 82, 92 反射構件 57, 77, 87 導體層 58, 78, 88 導電性粘接材料 59, 79, 89 凸部 64, 94 螢光體 96f 導線 97 貫通孔 95381.doc •77-92c 44, 55, 65, 75, 85, 95 Light-emitting elements 45, 53, 63, 73, 83, 93 Light-transmitting members 46, 69, 98 Light-emitting sections 52, 62, 72, 82, 92 Reflecting members 57, 77 , 87 conductive layer 58, 78, 88 conductive adhesive 59, 79, 89 convex 64, 94 phosphor 96f lead 97 through hole 95381.doc • 77-

Claims (1)

200527716 十、申請專利範圍： 1. 一種發光元件收納用封裝，其特徵在於包括： 基體’其係包含陶莞，在上面形成有發光元件的安放 部； 框體，其係、以圍繞所述安放部的方式接合在該基體的 上面的外周部，並且内周面作爲反射從所述發光元件發 出的光的反射面；及 配線導體，其係一端形成於所述上面上，並與所述發 光70件的電極電連接，並且另一端導出至所述基體的侧 面或下面；且 所述基體的所述陶瓷所含的晶粒的平均粒徑爲1〜5 μηι 〇 2· 一種發光裝置，其中備有： 如請求項1所述的發光元件收納用封裝；和 安放在所述安放部上，並且與所述配線導體電連接的 發光元件。 3·根據請求項2所述的發光裝置，其中包含透光性構件，其 係以覆蓋所述發光元件的方式設置在所述框體的内側， 且含有使所述發光元件發光的光進行波長變換的螢光 體。 4·根據請求項3所述的發光裝置，其中所述透光性構件的上 面與所述發光元件的發光部之間的距離爲〇1〜〇 8 mm。 5·根據請求項2所述的發光裝置，其中所述配線導體的所述 一端成爲所述發光元件通過導電性黏接材料電連接的導 95381.doc 200527716 體層；在該導體層的周圍形成有包含絕緣體的凸部。 6.根據請求項5所述的發光裝置，其中所述導體層比所述發 光元件的外周還位於内側。 7·根據晴求項5所述的發光裝置，其中所述凸部傾斜爲伴隨 其側面朝向所述基體側而向外側擴展。 8·根據請求項2所述的發光裝置，其中所述配線導體的所述 一端成爲所述發光元件通過導電性黏接材料而電連接的 導體層；在所述導體層上，在比所述發光元件的外周還 位於内側的上面上形成有凸部。 9·根據請求項2所述的發光裝置，其中所述安放部從所述基 體的上面突出。 10·根據請求項9所述的發光裝置，其中所述突出的安放部傾 斜爲伴隨其側面朝向所述基體侧而向外側擴展。 11 ·根據請求項3所述的發光裝置，其中所述安放部從所述基 體突出，而發光元件的發光部比所述反射面的下端還位 於上側，所述透光性構件之上面與所述發光部之間的距 離爲0.1〜0.5 mm。 12 ·根據請求項11所述的發光裝置，其中所述透光性構件之 表面的算術平均粗糙度爲中央部比外周部大。 1 3 ·根據請求項2所述的發光裝置，其中所述安放部從所述基 體上面突出’並且在其上面形成由所述配線導體的所述 一端構成且所述發光元件通過導電性黏接材料電連接的 導體層；在該導體層的周圍形成有包含絕緣體的凸部。 14.根據請求項13所述的發光裝置，其中所述導體層比所述 95381.doc 200527716 發光元件的外周還位於内側。 15·根據請求項π所述的發并梦罟，盆由％、+、π a < W知尤忒置，其中所述凸部傾斜爲伴 隨其侧面朝向所述基體側而向外側擴展。 16· —種發光裝置，其特徵在於具備·· 基體’其係包含平板狀的陶瓷； 發光元件；及 反射構件，其係與該基體的上面接合，在上側主面的 中央部上形成將所述發光元件安放在上面的安放部，在 上側主面的外周部上形成了圍繞所述安放部且將其内周 面作爲將所述發光元件發光的光反射的反射面的側壁 部；且 所述基體中的所述陶瓷所含的晶粒的平均粒徑爲丨〜5 μηι 〇 17.根據請求項16所述的發光裝置，其中包含透光性構件， 其係以覆蓋所述發光元件的方式設置在所述側壁部的内 側，並含有將所述發光元件發光的光進行波長變換的螢 光體。 18·根據請求項17所述的發光裝置，其中所述透光性構件之 上面與所述發光部之間的距離爲O.i〜0.5 mm。 19·根據請求項16所述的發光裝置，其中所述安放部爲凸狀。 2〇·根據請求項16所述的發光裝置，其中所述基體從其上面 到外面爲止形成配線導體；所述反射構件形成有貫通 孔，其係在所述安放部周圍貫通上下主面且位於比所述 光路線還下側’所述發光元件的電極與所述基體上面的 95381.doc 200527716 所述配線導體通過所述貫通孔，由導線電連接著。 21 ·根據請求項2〇所述的發光裝置，其中所述貫通孔在其内 部填充有含有了絕緣性的光反射粒子的絕緣性膏。 22. —種照明裝置，其特徵在於：設置爲使如請求項2〜21中 任一項所述發光裝置成爲規定配置。 95381.doc200527716 X. Scope of patent application: 1. A package for accommodating light-emitting elements, comprising: a base body including ceramics, on which a light-emitting element mounting portion is formed; a frame body, which is arranged to surround the mounting The inner peripheral surface serves as a reflecting surface that reflects light emitted from the light-emitting element; and a wiring conductor having one end formed on the upper surface and emitting light to the light-emitting element. 70 electrodes are electrically connected, and the other end is led out to the side or underside of the substrate; and the average particle size of the crystal grains contained in the ceramic of the substrate is 1 to 5 μηι 〇2. A light emitting device, wherein The light emitting element storage package according to claim 1 is provided, and the light emitting element is mounted on the mounting portion and is electrically connected to the wiring conductor. 3. The light-emitting device according to claim 2, further comprising a light-transmitting member which is provided inside the casing so as to cover the light-emitting element, and contains a wavelength of light that causes the light-emitting element to emit light. Transformed phosphor. 4. The light-emitting device according to claim 3, wherein a distance between the upper surface of the light-transmitting member and a light-emitting portion of the light-emitting element is 0 to 8 mm. 5. The light-emitting device according to claim 2, wherein the one end of the wiring conductor becomes a conductor layer that is electrically connected to the light-emitting element through a conductive adhesive material; 95381.doc 200527716; and a conductor layer is formed around the conductor layer. Contains protrusions of insulators. 6. The light-emitting device according to claim 5, wherein the conductor layer is located on an inner side than an outer periphery of the light-emitting element. 7. The light-emitting device according to claim 5, wherein the convex portion is inclined so as to expand outward as its side faces toward the base side. 8. The light-emitting device according to claim 2, wherein the one end of the wiring conductor becomes a conductor layer in which the light-emitting element is electrically connected through a conductive adhesive material; A convex portion is formed on the upper surface where the outer periphery of the light emitting element is also located on the inner side. 9. The light-emitting device according to claim 2, wherein the mounting portion protrudes from an upper surface of the substrate. 10. The light-emitting device according to claim 9, wherein the protruding mounting portion is inclined so as to expand outward as its side faces toward the base side. 11 The light-emitting device according to claim 3, wherein the mounting portion protrudes from the base, and the light-emitting portion of the light-emitting element is located on the upper side than the lower end of the reflective surface, and the upper surface of the light-transmitting member and the The distance between the light emitting portions is 0.1 to 0.5 mm. 12 The light-emitting device according to claim 11, wherein the arithmetic mean roughness of the surface of the light-transmitting member is greater in the central portion than in the outer peripheral portion. 1 3. The light-emitting device according to claim 2, wherein the mounting portion protrudes from the upper surface of the substrate, and is formed on the one end of the wiring conductor and the light-emitting element is adhered by conductivity. A conductor layer to which materials are electrically connected; a convex portion including an insulator is formed around the conductor layer. 14. The light-emitting device according to claim 13, wherein the conductor layer is located on an inner side than an outer periphery of the 95381.doc 200527716 light-emitting element. 15. According to the concurrence and nightmare described in claim π, the basin is composed of%, +, π a < W know especially, wherein the convex portion is inclined to expand outward with its side toward the base side. 16. A light-emitting device comprising: a base body including a flat-plate ceramic; a light-emitting element; and a reflecting member joined to an upper surface of the base body to form a base on a central portion of an upper main surface. The mounting portion on which the light-emitting element is mounted, a side wall portion surrounding the mounting portion and having an inner peripheral surface thereof as a reflecting surface that reflects light emitted by the light-emitting element is formed on an outer peripheral portion of the upper main surface; and The average particle size of the crystal grains contained in the ceramic in the substrate is 5 to 5 μm. 17. The light-emitting device according to claim 16, further comprising a light-transmitting member that covers the light-emitting element. The method is provided inside the side wall portion, and includes a phosphor that performs wavelength conversion of light emitted by the light emitting element. 18. The light-emitting device according to claim 17, wherein a distance between an upper surface of the light-transmitting member and the light-emitting portion is 0.1 to 0.5 mm. 19. The light-emitting device according to claim 16, wherein the mounting portion is convex. 20. The light-emitting device according to claim 16, wherein the base body forms a wiring conductor from the upper surface to the outer surface; the reflecting member is formed with a through hole that penetrates the upper and lower main surfaces around the mounting portion and is located at Lower than the optical path, the electrode of the light-emitting element and 95381.doc 200527716 above the base body are electrically connected to each other by a lead wire through the through hole. 21. The light-emitting device according to claim 20, wherein the through-hole is filled with an insulating paste containing insulating light-reflecting particles therein. 22. A lighting device characterized in that the lighting device is provided in a predetermined configuration as described in any one of claims 2 to 21. 95381.doc
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