KR101417003B1 - Light emitting device package and fabrication method thereof - Google Patents

Light emitting device package and fabrication method thereof Download PDF

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Publication number
KR101417003B1
KR101417003B1 KR1020070087903A KR20070087903A KR101417003B1 KR 101417003 B1 KR101417003 B1 KR 101417003B1 KR 1020070087903 A KR1020070087903 A KR 1020070087903A KR 20070087903 A KR20070087903 A KR 20070087903A KR 101417003 B1 KR101417003 B1 KR 101417003B1
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KR
South Korea
Prior art keywords
light emitting
package body
space
emitting device
electrodes
Prior art date
Application number
KR1020070087903A
Other languages
Korean (ko)
Other versions
KR20090022510A (en
Inventor
김영태
손효근
정흥섭
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Priority to KR1020070087903A priority Critical patent/KR101417003B1/en
Publication of KR20090022510A publication Critical patent/KR20090022510A/en
Application granted granted Critical
Publication of KR101417003B1 publication Critical patent/KR101417003B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73257—Bump and wire connectors

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  • Led Device Packages (AREA)

Abstract

A light emitting device package and a manufacturing method thereof according to an embodiment of the present invention are disclosed.

A light emitting device package according to an embodiment of the present invention includes: a package body having a plurality of electrodes formed therein; At least one space member formed on the package body; And at least one light emitting element disposed on the space member.

Light emitting device, package, space

Description

[0001] Light emitting device package and fabrication method [

An embodiment of the present invention relates to a light emitting device package and a manufacturing method thereof.

In general, a semiconductor light emitting device is an LED (Light Emitting Diode), which is an element used to transmit and receive signals by converting an electric signal into an infrared ray, a visible ray, or an ultraviolet ray using the characteristics of a compound semiconductor.

Usually, LED can be packaged and applied to household electric appliances, remote control, electric signboard, indicator, various automation equipment, lamp, and indicator lamp.

Embodiments of the present invention provide a light emitting device package and a method of manufacturing the same, wherein the light emitting device can be disposed at a high height from a package body.

Embodiments of the present invention provide a light emitting device package and a method of manufacturing the same that can arrange a space member between a light emitting device and a package body.

A light emitting device package according to an embodiment of the present invention includes: a package body having a plurality of electrodes formed therein; At least one space member formed on the package body; And at least one light emitting element disposed on the space member.

According to another aspect of the present invention, there is provided a method of manufacturing a light emitting device package, including: forming a groove on a top surface of a package body; Forming a plurality of electrodes on the groove; Forming a space member on the electrode; And arranging a light emitting element on the space member and connecting the light emitting element to a plurality of electrodes.

According to the light emitting device package and the manufacturing method thereof according to the embodiment of the present invention, the light extraction efficiency can be improved by minimizing the contact area of the light emitting device with other parts in the package.

Further, by arranging the space member between the light emitting element and the package body, the light extraction efficiency can be improved by adjusting the directivity.

Hereinafter, the present invention will be described with reference to the accompanying drawings.

FIG. 1 is a side sectional view of a semiconductor light emitting device package according to an embodiment of the present invention, and FIG. 2 is a partial detail view of FIG.

Referring to FIGS. 1 and 2, the light emitting device package 100 includes a package body 110, electrodes 113 and 115, a space member 131, and a light emitting device 120.

The package body 110 is formed of a material having excellent insulating or thermal conductivity (or a combination of materials) such as silicon, silicon carbide (SiC), aluminum nitride (AlN) . The surface of the package body 110 may be treated with silicon oxide (SiOx), silicon nitride (SiNx), or the like.

For example, the package body 110 may have a hexahedral shape and four side portions may be inclined. A groove 111 is formed on the upper part of the package body 110. The groove 111 may be formed by a predetermined etching method such as wet etching, (131).

A plurality of electrodes 113 and 115 are formed on the surface of the package body 110. Here, the electrodes 113 and 115 may be formed by an electron beam (E-beam), a sputter, or an electroplating deposition method.

An open region 143 formed between the plurality of electrodes 113 and 115 opens a plurality of electrodes 113 and 115 to each other.

For example, reflective layers 117 and 119 may be formed on the electrodes 113 and 115. The reflective layers 117 and 119 may be formed of a reflective material such as silver (Ag) or aluminum (Al).

At least one space member 131 having a predetermined height H1 is formed on the groove 111. The space member 131 is formed by selectively using an insulating material or a metal material. The space member 131 may be formed using a deposition method such as an electron beam (E-beam), a sputter, or an electroplating method, an etching method, or the like.

Here, the space member 131 may be formed using at least one of an insulating material such as epoxy or silicon, a transparent material such as indium tin oxide (ITO), Ni-Au, or ZnO, or a highly reflective material such as Ag, Ti, or Al . Here, ITO (indium tin oxide), Ni-Au, and ZnO are transparent materials, which can improve the directivity, and Ag, Ti, and Al are highly reflective materials and can improve the amount of reflected light.

The space member 131 may have a predetermined width T1 or T2 and a predetermined height H1. Here, the widths T1 and T2 of the space member 131 indicate the diameter and the width, and may be 30 to 50 μm, and they may be the same or different for each space member. The height H1 of the space member 131 indicates the thickness and the gap with the device 120 and may be 30 to 70 um. Here, the height H1 of the space member 131 may be 1/10 to 1/5 of the depth of the groove 111 (for example, 300 μm).

Here, the space member 131 may be formed in the form of an elliptical column, a polygonal column, a projection or the like having different widths (T3 and T4) of a circular column, a horizontal column and a vertical column as shown in FIG. 2, But it is not limited thereto.

A light emitting device 120 is disposed on the space member 131. The light emitting device 120 is die-bonded on the space member 131, and may be fixed using a transparent paste (for example, epoxy material) or an Ag paste.

The light emitting device 120 is connected to a plurality of electrodes 113 and 115 by wires 141 and 142, for example. The light emitting device 120 may include at least one groove 111 and may be disposed on the space member 131 when the plurality of light emitting devices 120 are formed. At least one of the plurality of light emitting devices 120 may be disposed on the space member 131 and at least one of the plurality of light emitting devices 120 may be mounted on the reflective layer 117 or 119 or the electrodes 113 and 115.

Here, the light emitting device 120 includes a substrate 121, a buffer layer 122 and / or an undoped semiconductor layer, an n-type semiconductor layer 123, an active layer 124 and a p-type semiconductor layer 125, The substrate 122 and / or the undoped semiconductor layer may not be formed, and the substrate 121 may be removed. The light emitting device 120 may be divided into a horizontal type light emitting device and a vertical type light emitting device depending on the direction in which the electrodes are laid. The light emitting device 120 may be mounted in a flip type or a wire type according to the mounted type.

A light transmitting mold member (not shown) is formed in the groove 111 region of the package body 110. The mold member may be formed in the region of the groove 111 and in the light emitting device 120. The light transmitting mold member may be formed of a transparent epoxy or silicon material, and a phosphor may be added.

In this embodiment, by keeping a space between the upper surface of the package body and the light emitting element, space can be maintained between the light emitting element and the light emitting body.

Figs. 3 to 5 are plan views of the package according to the embodiment, in which the number of space members is changed. Fig.

Referring to FIG. 3, two spacing members 131 are spaced apart from each other in a groove 111 of the package body 110, and a light emitting device 120 is disposed on the two spacing members 131.

4, four spaces 132 are formed in the groove 111 of the package body 110 and one light emitting device 120 is disposed on the four space members 133 .

5, one space member 133 is formed in the groove 111 of the package body 110, and one light emitting device 120 is disposed on one space member 133.

Here, the number, size, and shape of the space members 131, 132, and 133 formed in the package body 110 can be changed, but are not limited thereto.

6 to 8 are schematic views illustrating a method of mounting a space member and a light emitting device as a package according to an embodiment of the present invention.

Referring to FIG. 6, the package 101 has a structure in which the light emitting device 120 is mounted with one wire 142 when the spacer member 134 is made of a conductive material. A first electrode (not shown) of the light emitting device 120 is mounted on the space member 134 and connected to the first electrode 113 and a second electrode is connected to the second electrode 115 by a wire 142. [ Lt; / RTI >

Referring to FIG. 7, the package 102 has a structure in which the light emitting device 120 is mounted in a flip manner when the spacer members 135 and 136 are made of a conductive material. To this end, a first electrode (not shown) of the light emitting device 120 is mounted on the first space member 135 and a second electrode (not shown) of the light emitting device 120 is mounted on the second space member 136 Lt; / RTI > At this time, conductive bumps or the like may be additionally used or not used.

Referring to FIG. 8, the package 103 has a structure in which a plurality of light emitting devices 120A and 120B are mounted on a package body 110. FIG. The plurality of light emitting devices 120A and 120B may be mounted on a plurality of space members 135 and 136, respectively. Here, at least one of the plurality of light emitting elements (including the light emitting element, for example) may be mounted on the reflective layers 117 and 119 or the electrodes 113 and 115 instead of the space member.

The light emitting device packages 100 to 103 according to the embodiments may be formed by spacing the light emitting devices from the upper surface of the package body 110 at predetermined intervals using the space members 131 to 136, It is possible to adjust the directivity characteristic, thereby improving the light extraction efficiency.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications not illustrated in the drawings are possible.

For example, each component specifically shown in the embodiments of the present invention can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

1 is a side cross-sectional view of a light emitting device package according to an embodiment of the present invention.

2 is a detailed view of the space member and the light emitting device of FIG. 1;

3 is a plan view of Fig.

Fig. 4 and Fig. 5 are views showing an example in which the space member is changed in Fig. 3;

6 is a cross-sectional view illustrating an example in which a vertical type semiconductor light emitting device is applied to a light emitting device package according to an embodiment of the present invention.

7 is a sectional view showing an example in which a light emitting element is mounted on a space member in a flip manner in a light emitting device package according to an embodiment of the present invention.

8 is a sectional view showing an example in which a plurality of light emitting devices are arranged in a light emitting device package according to an embodiment of the present invention.

Description of the Related Art

100, 101 to 103: Light emitting device package 110: Package body

111: Groove 113, 115: Electrode

117, 119: reflective layer 120, 120A, 120B, 121, 122:

131 to 136: Space members 141 and 142:

Claims (20)

A package body having a plurality of electrodes formed thereon; A plurality of space members spaced apart from each other on the package body; And And at least one light emitting element disposed on the plurality of space members, Wherein the light emitting element comprises: a substrate disposed on the plurality of space members; An n-type semiconductor layer, an active layer, and a p-type semiconductor layer disposed on the substrate, Wherein the light emitting device is electrically connected to a plurality of electrodes of the package body, The plurality of spacers spacing the light emitting element from the upper surface of the package body, Wherein the plurality of space members are disposed in a region of the light emitting element. The method according to claim 1, Wherein the package body includes a groove in which the light emitting device and the space member are housed. 3. The method according to claim 1 or 2, Wherein the package body comprises silicon, silicon carbide (SiC), and aluminum nitride (AlN). 3. The method according to claim 1 or 2, And a reflective layer formed on the electrode. 3. The method according to claim 1 or 2, Wherein the space member comprises at least one of a metal material and an insulating material. 3. The method according to claim 1 or 2, Wherein the space member comprises at least one of silicon, epoxy, ITO, Ni-Au, ZnO, Ag, Ti, and Al. 3. The method according to claim 1 or 2, And a paste formed between the space member and the light emitting device. 3. The method according to claim 1 or 2, Wherein the plurality of space members have the same shape or different sizes. 3. The method according to claim 1 or 2, And each of the space members has a width of 30 to 50 mu m. 3. The method of claim 2, Wherein a height of the space member is 30 to 70 mu m or 1/10 to 5/1 of a depth of the groove. 3. The method according to claim 1 or 2, Wherein the light emitting element is connected to a plurality of electrodes of the package body by a wire. 3. The method according to claim 1 or 2, Wherein at least one of the plurality of space members is disposed on at least one of a plurality of electrodes of the package body. 3. The method of claim 2, And a light transmissive mold member formed on a groove of the package body or a light transmissive mold member to which a phosphor is added. 3. The method according to claim 1 or 2, Wherein each of the space members includes at least one of a circular column, an elliptic column, and a polygonal columnar shape. 15. The method of claim 14, Wherein a surface of each of the space members is formed in a concavo-convex shape. Forming a groove on an upper surface of the package body; Forming a plurality of electrodes on the groove; Forming a plurality of spaced apart spacers on at least one of the plurality of electrodes; Arranging a light emitting element on the plurality of space members and connecting the light emitting element to the plurality of electrodes, Wherein the light emitting element comprises: a substrate disposed on the plurality of space members; An n-type semiconductor layer, an active layer and a p-type semiconductor layer on the substrate, Wherein the light emitting device is electrically connected to a plurality of electrodes of the package body, The plurality of spacers spacing the light emitting element from the upper surface of the package body, Wherein the plurality of space members are disposed in a region of the light emitting element. 17. The method of claim 16, The outer side of the groove is inclined, and the reflective layer is formed on the groove. 18. The method according to claim 16 or 17, Wherein each of the space members is formed using at least one of silicon, epoxy, ITO, Ni-Au, ZnO, Ag, Ti, and Al. 18. The method according to claim 16 or 17, And a light transmitting mold member to which a light transmitting mold member or a fluorescent material is added is formed in a groove of the package body. 18. The method according to claim 16 or 17, Wherein the light emitting device is connected to a plurality of electrodes by wires.
KR1020070087903A 2007-08-30 2007-08-30 Light emitting device package and fabrication method thereof KR101417003B1 (en)

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Application Number Priority Date Filing Date Title
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Application Number Priority Date Filing Date Title
KR1020070087903A KR101417003B1 (en) 2007-08-30 2007-08-30 Light emitting device package and fabrication method thereof

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KR20090022510A KR20090022510A (en) 2009-03-04
KR101417003B1 true KR101417003B1 (en) 2014-07-09

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102515603B1 (en) * 2018-04-11 2023-03-29 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device package and light module

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060003387A (en) * 2004-07-06 2006-01-11 알티전자 주식회사 Substrate device with high reflective rate and method for producing the same
KR20060107428A (en) * 2003-10-30 2006-10-13 쿄세라 코포레이션 Light-emitting apparatus
KR20070045461A (en) * 2005-10-27 2007-05-02 엘지이노텍 주식회사 Light-emitting diode and manufacturing method thereof
JP2007184319A (en) 2006-01-04 2007-07-19 Showa Denko Kk Semiconductor light emitting device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060107428A (en) * 2003-10-30 2006-10-13 쿄세라 코포레이션 Light-emitting apparatus
KR20060003387A (en) * 2004-07-06 2006-01-11 알티전자 주식회사 Substrate device with high reflective rate and method for producing the same
KR20070045461A (en) * 2005-10-27 2007-05-02 엘지이노텍 주식회사 Light-emitting diode and manufacturing method thereof
JP2007184319A (en) 2006-01-04 2007-07-19 Showa Denko Kk Semiconductor light emitting device

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