KR20150042954A - Side-view light emitting device and method of making the same - Google Patents

Side-view light emitting device and method of making the same Download PDF

Info

Publication number
KR20150042954A
KR20150042954A KR20130121794A KR20130121794A KR20150042954A KR 20150042954 A KR20150042954 A KR 20150042954A KR 20130121794 A KR20130121794 A KR 20130121794A KR 20130121794 A KR20130121794 A KR 20130121794A KR 20150042954 A KR20150042954 A KR 20150042954A
Authority
KR
South Korea
Prior art keywords
light emitting
metal frame
substrate
pad
emitting device
Prior art date
Application number
KR20130121794A
Other languages
Korean (ko)
Inventor
박준용
정희철
민승구
이승욱
서대웅
박인규
Original Assignee
서울바이오시스 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 서울바이오시스 주식회사 filed Critical 서울바이오시스 주식회사
Priority to KR20130121794A priority Critical patent/KR20150042954A/en
Publication of KR20150042954A publication Critical patent/KR20150042954A/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

Disclosed are a light emitting device and a manufacturing method thereof. The light emitting device includes a substrate which includes a first side and a second side which is opposite to the first side, and a light emitting chip which is mounted on the first side of the substrate. The substrate includes a first metal frame, a second metal frame which is separated from the first metal frame, and an insulation layer which is located between the first and second metal frames. The first metal frame and the second metal frame are electrically connected to the light emitting chip. Thereby, provided is the light emitting device with a small size, a thin thickness, and high properties.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a side light emitting device,

The present invention relates to a side-emitting light-emitting device and a method of manufacturing the same, and more particularly to a side-emitting light-emitting device that does not use a lead frame and a manufacturing method thereof.

BACKGROUND ART [0002] Light emitting devices are inorganic semiconductor devices that emit light generated by recombination of electrons and holes. Recently, they are used in various fields such as displays, automobile lamps, and general lighting. Since the light emitting device has a long lifetime, low power consumption, and a high response speed, the light emitting device package including the light emitting device is expected to replace the conventional light source.

In general, a light emitting device package is manufactured by mounting a light emitting chip on a substrate, and electrically connecting a light emitting chip and a lead frame formed on the substrate. A ceramic substrate, a PCB substrate, or the like is used as the substrate, and the light emitting device package is manufactured by dicing or braking the substrate to individualize the substrate. However, the light emitting device including the lead frame has a disadvantage that the lifetime is shortened due to discoloration or damage of the lead frame, and the heat emission efficiency is lowered. In order to overcome these disadvantages, a technique has been proposed in which the substrate itself is manufactured by using a metal such as an Al substrate.

However, it is possible to pattern the lead on the substrate using metal or the like only on the upper surface or the lower surface. Accordingly, the size of the light emitting surface of the light emitting device package is limited, and when applied to an application such as a small display in which the demand for the light emitting device is increasing recently, the size of the entire application is limited.

Therefore, the conventional side light emitting light emitting device is manufactured in the form including the lead frame. The side-emission light-emitting device including the lead frame has a poor thermal characteristic, shortening the lifetime of the light-emitting device, and lowering the reflectivity of the housing, resulting in a decrease in light output. Moreover, in the case of a UV light emitting device used for a small display or a sterilizing device, discoloration or damage of the lead frame due to UV light occurs, and the reliability and lifetime of the light emitting device are deteriorated.

Accordingly, there is a demand for a side-emission light-emitting device that is excellent in electrical, optical, and thermal characteristics equivalent to those of existing top-view light-emitting devices and that is reduced in size and thickness.

A problem to be solved by the present invention is to provide a side luminescent light emitting device which is small in size and thin, and has excellent electrical, optical and thermal characteristics.

Another problem to be solved by the present invention is to provide a method of manufacturing a side-emission light-emitting device having an excellent process yield.

A light emitting device according to an embodiment of the present invention includes: a substrate including a first side and a second side opposite to the first side; And a light emitting chip mounted on a first side of the substrate, the substrate including a first metal frame, a second metal frame spaced apart from the first metal frame, and a second metal frame positioned between the first and second metal frames, And the first metal frame and the second metal frame are electrically connected to the light emitting chip, respectively.

The lower surface of the first metal frame and the lower surface of the second metal frame may be exposed on the lower surface of the substrate.

Furthermore, the substrate may further include a first pad and a second pad formed on a lower surface thereof or on a lower surface and an upper surface thereof, respectively, wherein the first and second pads are electrically connected to the first and second metal frames, Can be connected.

At least one of the first pad and the second pad may include a recess embedded from a lower surface of the substrate.

The substrate may further include a solder mask positioned between the first pad and the second pad.

Meanwhile, the substrate may include a cavity formed on the first side, and the light emitting chip may be mounted in the cavity.

The insulating layer, the first metal frame, and the second metal frame may be partially exposed in the cavity.

The light emitting device may further include a molding part for filling the cavity and sealing the light emitting chip.

The molding part may include a phosphor.

In some embodiments, the light emitting chip may emit light having a peak wavelength in the ultraviolet region.

Also, at least one of the first metal frame and the second metal frame may include Al.

A method of manufacturing a light emitting device according to another embodiment of the present invention includes a first metal frame, a second metal frame spaced apart from the first metal frame, and an insulating layer positioned between the first and second metal frames Providing a substrate comprising a first side and a second side opposite to the first side; At least two light emitting chips are mounted on the first side, and the at least two light emitting chips are electrically connected to the first and second metal frames, respectively; And cutting the area between the at least two light emitting chips to individualize the substrate.

The manufacturing method may further include forming a plurality of holes positioned in a region between the light emitting chips before mounting the light emitting chip, wherein the plurality of holes are formed in the first metal frame and the second metal And may include a first pad hole and a second pad hole that respectively penetrate the frame.

The method may further include forming first and second pads covering the side surfaces of the first pad hole and the second pad hole after forming the plurality of holes.

Individualizing the substrate may include dividing the first pad hole and the second pad hole.

According to the present invention, since the light emitting chip is formed on the side surface of the substrate, the light emitting device can be made small and thin. Further, while the light emitting chip is mounted on the side surface of the substrate, it is possible to provide a side light emitting light emitting device which is similar to the structure of the conventional top light emitting light emitting device and has excellent electrical, optical and thermal characteristics.

Further, according to the manufacturing method of the present invention, since a plurality of light emitting devices can be provided through a series of steps, a light emitting device can be manufactured efficiently.

1 and 2 are a perspective view and a front view illustrating a light emitting device according to an embodiment of the present invention.
3 to 8 are perspective views illustrating a method of manufacturing a light emitting device according to another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided by way of example so that those skilled in the art can sufficiently convey the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the width, length, thickness, etc. of components may be exaggerated for convenience. It is also to be understood that when an element is referred to as being "above" or "above" another element, But also includes the case where there are other components in between. Like reference numerals designate like elements throughout the specification.

1 and 2 are a perspective view and a front view illustrating a light emitting device according to an embodiment of the present invention.

Referring to FIGS. 1 and 2, the light emitting device includes a substrate 100 and a light emitting chip 200. Further, the light emitting device may further include a molding part 300 for sealing the light emitting chip 200.

The substrate 100 includes a first side and a second side opposite to the first side, and the light emitting chip 200 may be mounted on the first side. In this embodiment, the surface on which the light emitting chip 200 is mounted in FIG. 1 is the first side, and the surface in FIG. 2 is the first side, but the present invention is not limited thereto. In the following embodiments, the surface on which the light emitting chip 200 is mounted is defined as a first side, and the lower surface of the first side, that is, the bottom surface of FIG. 2 is defined as a lower surface of the substrate 100. FIG.

The substrate 100 includes a first metal frame 110, a second metal frame 120, and an insulating layer 130. Furthermore, the substrate 100 may further include a cavity 150, a first pad 111, a second pad 121, and a solder mask 140.

The first metal frame 110 and the second metal frame 120 may be spaced apart from each other and an insulating layer 130 may be interposed therebetween. Accordingly, the first metal frame 110 and the second metal frame 120 are electrically insulated from each other. The first metal frame 110 and the second metal frame 120 may serve as electrodes having different polarities and may be electrically connected to the light emitting chip 200, respectively. Accordingly, the first metal frame 110 and the second metal frame 120 can perform the role of a lead frame and a substrate at the same time. Thus, the light emitting device of the present invention can be made small and thin, Electrical and thermal properties. The lower surfaces of the first and second metal frames 110 and 120 may be exposed on the lower surface of the substrate 100 so that the first metal frame 110 and the second metal frame 120 effectively function as electrodes. At this time, the lower surface of the substrate 100, that is, the lower surfaces of the first and second metal frames 110 and 120, may be the mounting surface of the light emitting device. Referring to the drawings, the lower surface of the substrate 100 shown in Fig. 2 can be a mounting view of the light emitting device.

The first and second metal frames 110 and 120 may include Al, Ag, Cu, Ni, and the like. In particular, the first and second metal frames 110 and 120, May be an Al frame. Accordingly, the workability of the substrate 100 can be improved, and the reliability can be improved. Particularly, when the light emitting chip 200 emits light having a peak wavelength of the UV region, discoloration or damage of the first and second metal frames 110 and 120 can be prevented, and reliability and lifetime of the light emitting device Can be improved.

The substrate 100 may further include a first pad 111 and a second pad 121 formed on a lower surface thereof and electrically connected to the first and second metal frames 110 and 120, respectively. The first pad 111 and the second pad 121 can more effectively mount the light emitting device and improve the electrical characteristics. The first pad 111 and the second pad 121 may include Ni / Au or a Ni / Ag laminated structure, or Au. Particularly, when the first and second metal frames 110 and 120 include Al, the first pad 111 and the second pad 121 are further formed, so that the light emitting device can be mounted more stably . The first pad 111 and the second pad 121 may be further formed on the upper surface of the substrate 100. Therefore, both the upper surface and the lower surface of the substrate 100 can be used as the mounting surface of the light emitting device.

At least one of the first pad 111 and the second pad 121 may include recesses 111a and 121a embedded from the upper surface and / or the lower surface of the substrate 100. The recesses 111a and 121a may extend to the end of the substrate 100 as shown in FIG. The recesses 111a and 121a can increase the contact area between the surface on which the light emitting device is mounted and the first pad 111 and the second pad 121 so that the light emitting device can be more stably mounted.

The substrate 100 includes an insulating layer 130 disposed between the first metal frame 110 and the second metal frame 120 to isolate the two.

The insulating layer 130, the first metal frame 110, and the second metal frame 120 may be formed side by side. Accordingly, as shown in FIG. 1, the first metal frame 110, the second metal frame 120, and the insulating layer 130 may have the same shape as a plate. The first metal frame 110 and the second metal frame 120 may function as a lead frame in addition to the substrate 100 on which the light emitting chip 200 is mounted. Therefore, the light emitting device can be downsized and thinned. In addition, since the first metal frame 110 and the second metal frame 120 can be formed in a bulk shape instead of a lead shape, heat emission efficiency of the light emitting device can be improved.

The insulating layer 130 may comprise a variety of insulating materials known to those of ordinary skill in the art and may be formed of, for example, ceramics, polymeric materials, and the like. Further, the insulating layer 130 may further include a light-reflective substance such as TiO 2.

In addition, the substrate 100 may further include a cavity 150 formed on the first side.

The cavity 150 may be formed in a partially embedded form of the first metal frame 110 and a part of the second metal frame 120 and the insulating layer 130, as shown in the figure. Accordingly, a part of the first and second metal frames 110 and 120 and a part of the insulating layer 130 may be exposed in the cavity 150. [ The side surface of the cavity 150 may be formed to be inclined so that light emitted from the light emitting chip 200 can be more efficiently reflected.

Furthermore, the substrate 100 may further include a solder mask 140 positioned between the first pad 111 and the second pad 121. The solder mask 140 is positioned between the first pad 111 and the second pad 121 so that the first metal frame 110 and the second metal frame 120 are electrically connected to each other, Can be prevented.

The solder mask 140 may include, but is not limited to, an insulating material such as a photo solder resist, and may include various other insulating materials known to those of ordinary skill in the art.

Referring again to FIGS. 1 and 2, the light emitting device includes a light emitting chip 200 mounted on a first surface of a substrate 100. Further, the light emitting chip 200 may be mounted in the cavity 150.

The light emitting chip 200 may be a general light emitting diode including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first and second conductive semiconductor layers. In addition, the light emitting chip 200 may be various types of light emitting diodes and may be formed in various forms, for example, a horizontal type, a vertical type, or a flip chip type. In this embodiment, the light emitting chip 200 may be a flip chip type light emitting diode, and the first electrode and the second electrode of the light emitting diode are contacted with the first metal frame 110 and the second metal frame 120, respectively Gt; structure. ≪ / RTI > However, the present invention is not limited thereto. The structure of the light emitting chip 200 may be variously formed, and may be electrically connected to the first metal frame 110 and the second metal frame 120 using wires. .

The light emitting chip 200 can be adjusted to emit light having a peak wavelength of various wavelength ranges as needed. In particular, in this embodiment, the light emitting chip 200 can emit light having a peak wavelength in the ultraviolet region. Even if the light emitting chip 200 emits light having a peak wavelength in the ultraviolet region, the light emitting device of the present invention does not have a lead frame, so that there is no problem that the lead frame is discolored or damaged by ultraviolet rays. Accordingly, the reliability and lifetime of the light emitting device can be improved.

Hereinafter, a detailed description of well-known technical details related to the light emitting chip 200 will be omitted.

The light emitting device may further include a molding part 300 for sealing the light emitting chip 200. When the substrate 100 further includes the cavity 150, May be formed to fill the cavity (150). The molding part 300 can protect the light emitting chip 200 from the outside.

The molding part 300 may include a polymer material such as silicone or epoxy, and may further include a phosphor. The phosphor can convert light emitted from the light emitting chip 200 into light having a different wavelength, and can be adjusted to emit white light in the light emitting device using, for example, two or more kinds of phosphors.

According to the light emitting device of the embodiment described above, the light emitting device can be miniaturized and thinned, and can have electric, optical, and thermal characteristics equivalent to those of the conventional top surface light emitting device.

3 to 8 are perspective views illustrating a method of manufacturing a light emitting device according to another embodiment of the present invention. 1 and 2 are substantially the same as or similar to those described with reference to FIG. 1 and FIG. 2, the detailed description of the overlapping constitution will be omitted . 3 and 8, the first and second side surfaces, the lower surface, and the upper surface of the substrate 100 are the same as those of the substrate 100 in FIGS. 1 and 2, 1 and the second side face, the lower face and the upper face.

Referring to FIG. 3, the first metal frame 110 includes a first metal frame 110, a second metal frame 120, and an insulating layer 130 positioned between the first metal frame 110 and the second metal frame 120. The substrate 100 is prepared.

3 (a), the substrate 100 may have a structure in which a plurality of first metal frames 110 and a plurality of second metal frames 120 are repeatedly arranged, and the first And the second metal frame 120 may be disposed between the first metal frame 120 and the second metal frame 120. That is, according to the manufacturing method of the present invention, a plurality of light emitting devices can be provided from one substrate 100. In the following description, the "X" region shown in FIG. 3A is mainly described, The same process can be applied to other regions of the substrate 100 as well. FIG. 3 (b) shows an enlarged view of the area "X ".

The substrate 100 includes a first side and a second side located opposite the first side.

Referring to FIG. 4, a plurality of holes 410, 420, and 430 are formed in a substrate 100.

The plurality of holes 410, 420, and 430 may include a first pad hole 410, a second pad hole 420, and an insulation hole 430. The first and second pad holes 410 and 420 may be formed to penetrate the first metal frame 110 and the second metal frame 120 respectively and the insulation hole 430 may penetrate the insulation layer 130 . Here, the plurality of holes 410, 420, and 430 may be a structure extending from the first side to the second side of the substrate 100 and penetrating the substrate 100. Further, the insulating hole 430 may be formed to penetrate the first and second metal frames 110 and 120 more. The plurality of holes 410, 420, and 430 may be formed in parallel with each other, and may be formed along one imaginary line, for example, as shown in FIG. Meanwhile, the insulating hole 430 may be omitted if necessary.

5, a first pad 111 and a second pad 121 are formed to cover the side surfaces of the first and second pad holes 410 and 420, A solder mask 140 is formed.

The first pad 111 and the second pad 121 may be formed to cover the side surfaces of the first pad hole 410 and the second pad hole 420 by plating or the like. Accordingly, the first residual hole 111b and the second residual hole 121b can be formed. However, the present invention is not limited thereto. The first pad 111 and the second pad 121 may be formed to completely fill the first pad hole 410 and the second pad hole 420, respectively.

Next, referring to FIG. 6, the first and second metal frames 110 and 120 and the insulating layer 130 are partially removed on the first side of the substrate 100 to form the cavity 150.

The cavity 150 may be formed using a physical process, and may be formed on a plurality of regions formed by individual light emitting device units. In particular, as shown in FIG. 6, the cavities 150 may be formed in a plurality of lines along a line in which the insulating layer 130 is formed.

Referring to FIG. 7, the light emitting chip 200 is mounted on the substrate 100 in the cavity 150.

The light emitting chip 200 may be electrically connected to each of the first metal frame 110 and the second metal frame 120. For example, when the light emitting chip 200 is in the form of a flip chip, As shown, it can be formed to be in direct contact without wire bonding. However, the present invention is not limited thereto, and may be electrically connected using wires according to the shape of the light emitting chip 200.

Further, the molding part 300 for filling the cavity 150 and sealing the light emitting chip 200 can be formed.

Next, referring to Fig. 8, if the substrate 100 is made to be individual along the dotted line, the light emitting device shown in Figs. 1 and 2 is provided. The substrate 100 may be individualized by dividing the first and second pads 111 and 121. Accordingly, the first and second pads 111 and 121 may be formed on the upper surface and / or the lower surface of the individualized substrate 100, as shown in FIGS.

On the other hand, according to this embodiment, a plurality of light emitting devices can be provided through a series of processes by adjusting the number of regions to be individualized on the substrate 100 to at least two or more as necessary. Thus, a plurality of side-emission light-emitting devices can be provided through a series of processes, and the process efficiency can be improved.

The present invention is not limited to the above-described various embodiments and features, and various modifications and changes may be made without departing from the technical idea of the present invention.

Claims (15)

A substrate comprising a first side and a second side opposite the first side; And
And a light emitting chip mounted on a first side of the substrate,
The substrate includes a first metal frame, a second metal frame spaced apart from the first metal frame, and an insulating layer positioned between the first and second metal frames,
Wherein the first metal frame and the second metal frame are electrically connected to the light emitting chip, respectively. The method according to claim 1,
Wherein a bottom surface of the first metal frame and a surface of the second metal frame are exposed on a lower surface of the substrate. The method of claim 2,
The substrate further includes a first pad and a second pad formed on a lower surface thereof or on a lower surface and an upper surface thereof,
Wherein the first and second pads are electrically connected to the first and second metal frames, respectively. The method of claim 3,
Wherein at least one of the first pad and the second pad includes a recess embedded from a lower surface of the substrate. The method of claim 3,
Wherein the substrate further comprises a solder mask positioned between the first pad and the second pad. The method according to claim 1,
Wherein the substrate comprises a cavity formed on the first side,
And the light emitting chip is mounted in the cavity. The method of claim 6,
Wherein the insulating layer, the first metal frame, and the second metal frame are partially exposed in the cavity. The method of claim 6,
And a molding part for filling the cavity and sealing the light emitting chip. The method of claim 8,
Wherein the molding part comprises a phosphor. The method according to claim 1,
Wherein the light emitting chip emits light having a peak wavelength in an ultraviolet region. The method according to claim 1,
Wherein at least one of the first metal frame and the second metal frame comprises Al. A first metal frame, a second metal frame spaced apart from the first metal frame, and an insulating layer positioned between the first and second metal frames, the first metal frame having a first side and an opposite side of the first side Preparing a substrate comprising a second aspect;
At least two light emitting chips are mounted on the first side, and the at least two light emitting chips are electrically connected to the first and second metal frames, respectively;
And cutting the region between the at least two light emitting chips to individualize the substrate. The method of claim 12,
Further comprising forming a plurality of holes located in a region between the light emitting chips before mounting the light emitting chip,
Wherein the plurality of holes include a first pad hole and a second pad hole penetrating the first metal frame and the second metal frame, respectively. 14. The method of claim 13,
Further comprising forming a first pad and a second pad covering the side surfaces of each of the first pad hole and the second pad hole after forming the plurality of holes. 15. The method of claim 14,
Wherein individualizing the substrate includes dividing the first pad hole and the second pad hole.
KR20130121794A 2013-10-14 2013-10-14 Side-view light emitting device and method of making the same KR20150042954A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR20130121794A KR20150042954A (en) 2013-10-14 2013-10-14 Side-view light emitting device and method of making the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR20130121794A KR20150042954A (en) 2013-10-14 2013-10-14 Side-view light emitting device and method of making the same

Publications (1)

Publication Number Publication Date
KR20150042954A true KR20150042954A (en) 2015-04-22

Family

ID=53035839

Family Applications (1)

Application Number Title Priority Date Filing Date
KR20130121794A KR20150042954A (en) 2013-10-14 2013-10-14 Side-view light emitting device and method of making the same

Country Status (1)

Country Link
KR (1) KR20150042954A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108954201A (en) * 2018-09-12 2018-12-07 Tcl华瑞照明科技（惠州）有限公司 LED lamp bead and LED illumination lamp
KR20210151029A (en) * 2017-04-26 2021-12-13 삼성전자주식회사 Light emitting device package
US11677059B2 (en) 2017-04-26 2023-06-13 Samsung Electronics Co., Ltd. Light-emitting device package including a lead frame

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210151029A (en) * 2017-04-26 2021-12-13 삼성전자주식회사 Light emitting device package
US11677059B2 (en) 2017-04-26 2023-06-13 Samsung Electronics Co., Ltd. Light-emitting device package including a lead frame
CN108954201A (en) * 2018-09-12 2018-12-07 Tcl华瑞照明科技（惠州）有限公司 LED lamp bead and LED illumination lamp

Similar Documents

Publication Publication Date Title
US7755099B2 (en) Light emitting device package
US10431567B2 (en) White ceramic LED package
KR100593937B1 (en) Led package using si substrate and fabricating method thereof
JP6323217B2 (en) Light emitting device
KR101693642B1 (en) Manufacturing method of Light emitting device package
JP2006093697A (en) High luminance light-emitting diode provided with protection function against electrostatic discharge impact
KR101766297B1 (en) Light emitting device package and method of fabricating the same
US20130240918A1 (en) Electrolytically coated optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component
KR20120119395A (en) Light emitting device package and method of manufacturing the same
JP7212753B2 (en) semiconductor light emitting device
US8748913B2 (en) Light emitting diode module
KR101775428B1 (en) Light emitting device package and method of manufacturing the same
KR20150042954A (en) Side-view light emitting device and method of making the same
KR101363980B1 (en) Optical module and manufacturing method thereof
JP4016925B2 (en) Light emitting device
KR20110107632A (en) Light emitting device package and fabrication method thereof
TW201448286A (en) Light emitting diode package and method for manufacturing the same
US20170117452A1 (en) Light-emitting device
KR102111142B1 (en) Light emitting device and method of making the same
TW201314974A (en) LED and manufacture method making the same
KR101511032B1 (en) Leadframe for manufacturing LED package and LED package using the same
TWI531096B (en) Sideview light emitting diode package and method for manufacturing the same
TW201533928A (en) Light emitting diode package and method for forming the same
KR20170037907A (en) Light emitting device
JP2019117818A (en) Mounting substrate, light emitting device, and manufacturing method of light emitting device

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination