CN2911965Y - White-light LED - Google Patents
White-light LED Download PDFInfo
- Publication number
- CN2911965Y CN2911965Y CNU2006200156773U CN200620015677U CN2911965Y CN 2911965 Y CN2911965 Y CN 2911965Y CN U2006200156773 U CNU2006200156773 U CN U2006200156773U CN 200620015677 U CN200620015677 U CN 200620015677U CN 2911965 Y CN2911965 Y CN 2911965Y
- Authority
- CN
- China
- Prior art keywords
- white light
- emitting diode
- light emitting
- chip
- bowl cup
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
Abstract
The utility model discloses a function illumination type white light light-emitting diode, comprising a base plate with high-thermal conductivity, at least a bowl(2) positioned on the base plate, at least a chip(3) positioned in the bowl, a layer of phosphor powder(4) covering on the chip, and an ultraviolet-resistant lens shade of a hollow enclosing cover of the bowl(2); two high thermal conductivity pins(7) are stretched to the outside of the lens shade; the positive, negative poles of the chip(3) are connected with the pins(7) each by a down-lead(6). In the utility model, the innovation of the structure provides a white light LED with a considerably period of usage, giving a reliable staple product for the real realization of the white light LED function illumination.
Description
Technical field
The utility model relates to light-emitting diode (LED), relates in particular to a kind of function illumination type light-emitting diode that sends white light.
Background technology
White light LEDs is a kind of electric current forward to be led to the semiconductor PN place and luminous device.It is a most very powerful and exceedingly arrogant current light source technology, has a lot of advantages with respect to conventional light source.The most significant advantage is energy-conservation, saves 80% electric energy than fluorescent lamp, and adopts low-voltage power supply mode, safety and reliability, long service life.Light-emitting diode not only on producing the required energy and material few, it does not also contain common toxic material mercury in fluorescent lamp, and is environmentally friendly.The developing direction that on behalf of current LED point-source of light, large power white light LED make the transition to the function illumination from decorative lighting, prospect is incomparably wide.
As shown in Figure 1, existing vertical support white light emitting diode by the down-lead bracket 01 of two leg formulas, be located at the chip 02 in the support bowl cup, the fluorescent material 03 that covers chip and the epoxy resin lenses 04 of packaged chip and form.There is following distinct disadvantage in this encapsulating structure:
1, during epoxy encapsulation with chip parcel and contact fully, the light and heat that chip sends makes the epoxy resin accelerated ageing, the abundant encapsulation of epoxy resin makes that the radiating effect of LED is relatively poor, thereby has a strong impact on the light efficiency and the life-span of white light LEDs;
2, the unreasonable and down-lead bracket of bowl cup structure of two leg formulas causes the heat-sinking capability deficiency, greatly reduces the light efficiency and the life-span of white light LEDs.
, light decay poor owing to existing white light LEDs light efficiency seriously causes the useful life of device lower, thereby the puzzlement white light LEDs is to the fast development of function illumination.Industry is constantly being sought a kind of light efficiency height, long white light LEDs of life-span always, and expectation produces the great change of the industry of once throwing light on.
The utility model content
The utility model is in order to solve the problem that existing white light LEDs light efficiency is low, light decay is serious and useful life is short, provides a kind of light efficiency height, light decay is very little and the white light LEDs of long service life.
For addressing the above problem, technical solutions of the utility model are a kind of white light emitting diodes of structure, it comprise a high-termal conductivity pedestal, be located at least one bowl of cup on this pedestal, be located at least one chip block in the described bowl cup, be covered in layer of fluorescent powder on this chip, a lens cap with the anti-ultraviolet hollow of described bowl cup sealing cover, the lead foot of two high-termal conductivity stretches outside this lens cap respectively, and the positive and negative electrode of described chip is connected respectively with described lead foot by a lead-in wire separately.
First embodiment of the present utility model, described pedestal are a cylinder, and its upper surface is provided with a described bowl cup.
Second embodiment of the present utility model, described pedestal is a housing, which is provided with a plurality of boss that have described bowl cup, and lens cap is one to form the transparent component of hollow encapsulation with described housing.
Can be filled with inert gas in the lens cap cavity of described hollow.
Described inert gas can be for nitrogen, helium, neon, argon gas, xenon a kind of.
The angle of described bowl cup inner peripheral surface both sides oblique line is 80 to 120 degree, and preferable angle is 90 degree.
The material of described pedestal can be for copper material, aluminium, iron material a kind of.
The material of described lens cap is a kind of of K7 uvioresistant optical glass, uvioresistant resin, pottery.
The utility model has compared with prior art been done following 3 improvement:
1, adopts the optical lens cover of hollow uvioresistant (UV), wherein fill inert gas.Thereby strengthened light transmittance and thermal conductivity, can keep the stability of chip operating state simultaneously, more fully the light efficiency of excited white light LED;
2, adopt the chip base of large volume to substitute traditional vertical support,, can accelerate heat radiation greatly, thereby reduce the thermal resistance after the White-light LED chip encapsulation, obtain better heat radiating effect by the high thermal conductivity energy of material;
3, choose bowl best angle of cup reflecting surface, and utilize an inferior optical processing technique improvement bowl cup optical reflection coefficient, improved the effective luminous efficacy after the white light LEDs die encapsulates.
The utility model is the contrast table of novel white-light LED and existing vertical support white light LEDs major parameter through long-time test in batches below.
Used crystal chip, fluorescent material, fluorescent glue and wafer adhesive are all identical.Test under forward current IF=20MA, ambient temperature Ta=22.3 ℃, the condition of relative humidity PH=57%, comparing result is as follows:
One, optical parameter (luminous flux, light efficiency)
| Universal method | Novel method | ||||
| Sequence number | Luminous flux (Lm) | Light efficiency (Lm/W) | Sequence number | Luminous flux (Lm) | Light efficiency (Lm/W) |
| 1 | 4.21 | 70.17 | 1 | 5.051 | 84.18 |
| 2 | 3.96 | 66 | 2 | 4.864 | 81.06 |
| 3 | 4.151 | 69.18 | 3 | 5.023 | 83.71 |
| 4 | 3.971 | 66.18 | 4 | 4.941 | 82.35 |
| 5 | 4.321 | 72.01 | 5 | 5.316 | 88.6 |
| 6 | 3.861 | 64.35 | 6 | 4.944 | 82.4 |
| 7 | 4.010 | 66.83 | 7 | 4.847 | 80.78 |
| 8 | 4.31 | 71.83 | 8 | 5.376 | 89.6 |
| 9 | 4.358 | 72.63 | 9 | 5.54 | 92.33 |
| 10 | 4.03 | 67.16 | 10 | 5.23 | 87.16 |
| AUG | 4.118 | 68.63 | AUG | 5.133 | 85.22 |
From top chart as can be seen the utility model white light LEDs compare with existing vertical support white light LEDs, luminous flux has increased by 20%, light efficiency has improved 20%.
Two, life-span contrast table
In the table: abscissa is represented the burn-in test time of LED, and unit is hour.Ordinate is represented the percentage of corresponding burn-in test time luminous flux and initial luminous flux.The existing perpendicular type white light LEDs percentage of the vertical expression in a left side.Right indulging is expression the utility model white light LEDs percentage.
The test curve that "---" existing perpendicular type white light LEDs is;
By above contrast, existing as can be seen perpendicular type white light LEDs only has 10% of initial luminous flux at the aging back of 5000H luminous flux; White light LEDs of the present utility model only decays to 85% of initial luminous flux after 5000H is aging.Thereby the life-span of the utility model white light LEDs increases greatly as can be seen, realizes that for real the function illumination of white light LEDs provides reliable basic product.
Description of drawings
Below in conjunction with drawings and Examples the utility model is described further, wherein:
Fig. 1 is the structural representation of existing white light emitting diode;
Fig. 2 is the structural representation of the utility model first embodiment;
Fig. 3 is the structural representation of the hollow lens cap among Fig. 2;
Fig. 4 is the structural representation of pedestal among Fig. 2;
Fig. 5 is the schematic top plan view of the utility model second embodiment;
Fig. 6 be among Fig. 5 A-A to the structural representation of cross section.
Embodiment
Fig. 2 shows the basic structure of the utility model first embodiment, described white light emitting diode, it comprise a high-termal conductivity pedestal 1, be located at this pedestal upper surface a bowl cup 2, be located at chip piece 3 in the bowl cup, be covered in the layer of fluorescent powder 4 on this chip.The lens cap 5 of one anti-ultraviolet hollow is with bowl cup 2 sealing covers, and the lead foot 7 of two high-termal conductivity is stretched outward by lens cap 5 bottom introversions respectively, and the positive and negative electrode of chip 3 is connected with lead foot 7 respectively by a lead-in wire 6 separately.In the present embodiment, described pedestal 1 is a cylinder (please read Fig. 4), also can be the cylinder of other shapes, only needs the shape of lens cap adaptive with it.Pedestal 1 can adopt a kind of material of copper material, aluminium, iron material to make.The angle of bowl cup 2 inner peripheral surface both sides oblique lines is 80 to 120 degree, and the optimum value of angle is 90 degree (please read Fig. 4), and utilizes the optical reflection coefficient of inferior optical processing technique improvement bowl cup.The piece number of bowl cup 2 chips can be provided with as required, as, chip of three different colours or the like is set.Fill inert gas 8 in the cavity of lens cap 5, as, nitrogen, helium, neon, argon gas, xenon etc.As shown in Figure 3, lens cap 5 can adopt K7 uvioresistant optical glass material to make, and also can adopt other anti-ultraviolet materials to make, as, uvioresistant resin, pottery etc.
Fig. 5, Fig. 6 shows the basic structure of the utility model second embodiment, chip is installed and quantity, the shape of material that adopts and bowl cup is basically the same as those in the first embodiment, different is, described pedestal is the housing 10 of the high heat conduction of a spill, be evenly equipped with a plurality of boss 11 that have described bowl cup 2 on its inner surface, the quantity of boss can be selected as required, as, nine boss etc., be provided with chip 3 in the bowl cup, layer of fluorescent powder is covered in (not shown) on the chip, chip just, negative electrode separately by one the lead-in wire 6 respectively be located at shell inner surface on the corresponding connection of circuit, and lens cap is one to form the transparent plate 9 of hollows encapsulation with this housing 10, and promptly the lens cap boss 11 whole hollows that will a plurality ofly have a bowl cup 2 encapsulate.Be filled with inert gas 8 in the cavity of housing 10.Also the housing of high heat conduction can be made flat board, and the lens cap of supporting encapsulation makes corresponding concavity body, so that form hollow structure.
The utility model makes the life-span of white light LEDs increase greatly by structural improvement, realizes that for real the function illumination of white light LEDs provides reliable basic product.
Claims (9)
1, a kind of white light emitting diode, it is characterized in that: comprise a high-termal conductivity pedestal, be located at least one bowl of cup (2) on this pedestal, be located at least one chip block (3) in the described bowl cup, be covered in layer of fluorescent powder (4), an anti-ultraviolet lens cap with described bowl cup (2) hollow sealing cover on this chip, two lead foots (7) of high-termal conductivity stretch outside this lens cap respectively, and the positive and negative electrode of described chip (3) is connected respectively with described lead foot (7) by a lead-in wire (6) separately.
2, white light emitting diode as claimed in claim 1 is characterized in that: described pedestal is a column (1), and its upper surface is provided with a described bowl cup (2).
3, white light emitting diode as claimed in claim 1, it is characterized in that: described pedestal is a housing (10), which is provided with a plurality of boss that have described bowl cup (2), and lens cap is one to form the transparent component (9) of hollow encapsulation with described housing (10).
4, white light emitting diode as claimed in claim 1 is characterized in that: be filled with inert gas (8) in the cavity of described lens cap.
5, white light emitting diode as claimed in claim 4 is characterized in that: described inert gas (8) is a kind of of nitrogen, helium, neon, argon, xenon.
6, white light emitting diode as claimed in claim 1 is characterized in that: the angle of described bowl cup (2) inner peripheral surface both sides oblique line is 80 to 120 degree.
7, white light emitting diode as claimed in claim 6 is characterized in that: the angle of described bowl cup (2) inner peripheral surface both sides oblique line is 90 degree.
8, white light emitting diode as claimed in claim 1 is characterized in that: the material of described pedestal is a kind of of copper material, aluminium, iron material.
9, white light emitting diode as claimed in claim 1 is characterized in that: the material of described lens cap is uvioresistant optical glass, uvioresistant resin, pottery.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2006200156773U CN2911965Y (en) | 2006-11-08 | 2006-11-08 | White-light LED |
| PCT/CN2007/003006 WO2008055406A1 (en) | 2006-11-08 | 2007-10-22 | A white light led |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2006200156773U CN2911965Y (en) | 2006-11-08 | 2006-11-08 | White-light LED |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2911965Y true CN2911965Y (en) | 2007-06-13 |
Family
ID=38133827
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2006200156773U Expired - Fee Related CN2911965Y (en) | 2006-11-08 | 2006-11-08 | White-light LED |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN2911965Y (en) |
| WO (1) | WO2008055406A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008055406A1 (en) * | 2006-11-08 | 2008-05-15 | Chang Hsin High Intensity Led (Dong Guan) Co., Ltd | A white light led |
| CN102192443A (en) * | 2010-05-28 | 2011-09-21 | 深圳市日锋电子有限公司 | LED (light emitting diode) spotlamp |
| CN101728464B (en) * | 2008-10-24 | 2011-12-07 | 财团法人工业技术研究院 | Concentrating component of light-emitting diode |
| CN102332522A (en) * | 2010-07-15 | 2012-01-25 | 展晶科技(深圳)有限公司 | Packaging structure of light emitting diode and packaging method thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107731986A (en) * | 2017-10-30 | 2018-02-23 | 深圳莱特光电股份有限公司 | Infrared LED integral type encapsulating structure for lossless signal transmission |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4045781B2 (en) * | 2001-08-28 | 2008-02-13 | 松下電工株式会社 | Light emitting device |
| JP2003092429A (en) * | 2001-09-17 | 2003-03-28 | Okaya Electric Ind Co Ltd | Light emitting element and its manufacturing method |
| EP1413619A1 (en) * | 2002-09-24 | 2004-04-28 | Osram Opto Semiconductors GmbH | Luminescent material, especially for LED application |
| TWI245436B (en) * | 2003-10-30 | 2005-12-11 | Kyocera Corp | Package for housing light-emitting element, light-emitting apparatus and illumination apparatus |
| US7560820B2 (en) * | 2004-04-15 | 2009-07-14 | Saes Getters S.P.A. | Integrated getter for vacuum or inert gas packaged LEDs |
| CN2717026Y (en) * | 2004-06-11 | 2005-08-10 | 佛山市国星光电科技有限公司 | Multi-chip packaging structure LED |
| CN2911965Y (en) * | 2006-11-08 | 2007-06-13 | 秦波 | White-light LED |
| CN2935474Y (en) * | 2007-01-12 | 2007-08-15 | 吴庆华 | Functional lighting LED |
-
2006
- 2006-11-08 CN CNU2006200156773U patent/CN2911965Y/en not_active Expired - Fee Related
-
2007
- 2007-10-22 WO PCT/CN2007/003006 patent/WO2008055406A1/en active Application Filing
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008055406A1 (en) * | 2006-11-08 | 2008-05-15 | Chang Hsin High Intensity Led (Dong Guan) Co., Ltd | A white light led |
| CN101728464B (en) * | 2008-10-24 | 2011-12-07 | 财团法人工业技术研究院 | Concentrating component of light-emitting diode |
| CN102192443A (en) * | 2010-05-28 | 2011-09-21 | 深圳市日锋电子有限公司 | LED (light emitting diode) spotlamp |
| CN102192443B (en) * | 2010-05-28 | 2013-02-06 | 深圳市极成光电有限公司 | LED (light emitting diode) spotlamp |
| CN102332522A (en) * | 2010-07-15 | 2012-01-25 | 展晶科技(深圳)有限公司 | Packaging structure of light emitting diode and packaging method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2008055406A1 (en) | 2008-05-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: CHANGXIN PHOTOELECTRIC( DONGGUAN ) CO., LTD. Free format text: FORMER OWNER: QIN BO Effective date: 20071019 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20071019 Address after: 523750 Guangdong city of Dongguan Province Huang Town crow Gang Management District Patentee after: Changxin Photoelectric(Dongguan) Co., Ltd. Address before: 511700 Guangdong city of Dongguan Province Huang Town Yongjun road two Patentee before: Qin Bo |
|
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070613 Termination date: 20111108 |