CN107731986A - Infrared LED integral type encapsulating structure for lossless signal transmission - Google Patents
Infrared LED integral type encapsulating structure for lossless signal transmission Download PDFInfo
- Publication number
- CN107731986A CN107731986A CN201711034957.8A CN201711034957A CN107731986A CN 107731986 A CN107731986 A CN 107731986A CN 201711034957 A CN201711034957 A CN 201711034957A CN 107731986 A CN107731986 A CN 107731986A
- Authority
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- China
- Prior art keywords
- phosphor powder
- powder layer
- reflective cup
- encapsulating structure
- signal transmission
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000008054 signal transmission Effects 0.000 title claims abstract description 15
- 239000000843 powder Substances 0.000 claims abstract description 45
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000000919 ceramic Substances 0.000 claims abstract description 32
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- 229910002114 biscuit porcelain Inorganic materials 0.000 claims description 9
- 239000011261 inert gas Substances 0.000 claims description 7
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- -1 Eu2+ nitride Chemical class 0.000 claims description 3
- 229920000515 polycarbonate Polymers 0.000 claims description 3
- 239000004417 polycarbonate Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 10
- 238000013461 design Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 12
- 238000005538 encapsulation Methods 0.000 description 10
- 230000017525 heat dissipation Effects 0.000 description 9
- 239000011324 bead Substances 0.000 description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 238000009877 rendering Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 230000002195 synergetic effect Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
Abstract
The present invention provides a kind of infrared LED integral type encapsulating structure for lossless signal transmission, including base of ceramic, reflective cup, the reflective cup is above the base of ceramic, the base of ceramic surface is arranged with infrared emission chip and infrared receiver chip, the reflective cup is provided with diversing lens, and the diversing lens are on same axis with the infrared emission chip；The diversing lens include the first phosphor powder layer below the reflective cup, the second phosphor powder layer, lens jacket above reflective cup, and first phosphor powder layer, the second phosphor powder layer, lens jacket are arranged successively.The present invention can avoid infrared LED from being disturbed in the course of the work by the external world, while provide excellent radiating effect, it is ensured that the steady operation of infrared LED.
Description
Technical field
The invention belongs to LED encapsulation technologies field, and in particular to a kind of infrared LED integral type for lossless signal transmission
Encapsulating structure.
Background technology
Light fixture has the advantages of efficient energy-saving, but the light conversion efficiency of LED chip turns in 20%-30% or so, dump energy
Being changed to interior energy causes chip temperature to raise.Temperature is too high to aggravate light fixture light decay, so as to influence lamp life.Research shows, warm
Degree not only influences the life-span of LED chip, can also trigger the issue of ASIC thermal failure of fluorescent material, or even when temperature is higher than a certain threshold value,
There is not luminescence phenomenon, that is, " thermal quenching " phenomenon in fluorescent material.The temperature rise of fluorescent material mostlys come from oneself of fluorescent material light absorbs
Heat effect and the mutual heat effect of LED chip heating.Actual measurement shows that in the operating condition, fluorescent material temperature is compared with chip temperature height.With
A large amount of commercial applications of white light LEDs, the power of LED chip has also been stepped up to more than watt level, LED chip heat dissipation technology
Become the key for restricting high-powered LED lamp application.
The thermal design of existing most of LED encapsulation concentrates on the heat-sinking capability for improving LED package outsides, including radiator
Active heat removal and passive heat dissipation design, the heat dissipation design internal on LED encapsulation, especially fluorescent powder silica gel mixture is scattered
Thermal design is also seldom.Meanwhile LED light source is a kind of low-voltage direct device, in the course of the work easily by various interference.
The content of the invention
In view of this, present invention offer is a kind of to avoid infrared LED from being disturbed in the course of the work by the external world, simultaneously
There is provided excellent radiating effect, it is ensured that the infrared LED integral type encapsulation knot of the lossless signal transmission of the steady operation of infrared LED
Structure.
The technical scheme is that：For the infrared LED integral type encapsulating structure of lossless signal transmission, its feature exists
In, including base of ceramic, reflective cup, the reflective cup is above the base of ceramic, the base of ceramic surface pair
Title is provided with infrared emission chip and infrared receiver chip, and the reflective cup is provided with diversing lens, the diversing lens and institute
Infrared emission chip is stated to be on same axis；The diversing lens include the first fluorescent material below the reflective cup
Layer, the second phosphor powder layer, lens jacket above reflective cup, first phosphor powder layer, the second phosphor powder layer, lens jacket
Arrange successively.
Further, the area filling between the reflective cup and the base of ceramic has inert gas.
Further, the horizontal cross-section of the reflective cup is isosceles trapezoid.
Further, the surface of the reflective cup is provided with anti-interference bisque.The anti-interference bisque is of the prior art
Anti-interference pulvis flaggy.It can be effectively prevented from being disturbed by extraneous factor inside encapsulating structure, ensure stable operation.
Further, platinum line, infrared receiver chip and ceramic base are provided between the infrared emission chip and base of ceramic
Platinum line is provided between seat, good electric connection scheme is provided with this.
In the present invention, there are inert gas, and ceramics by the area filling between reflective cup and the base of ceramic
The collective effect of pedestal, the advantages of good thermal conductivity and stability, is had based on base of ceramic, can be the encapsulation of the present invention
Inside configuration provides excellent heat sink conception.
Further, first phosphor powder layer is Li2-x（AlBO4）：XEu3+, 0≤x≤0.25, easily it is excited, has
Efficient light guide efficiency.
Further, second phosphor powder layer is (Sr, Ca) AlSiN3:Eu2+ nitride fluorescent bisques.It is specifically, described
Phosphor powder layer is Sr0.8Ca0.192AlSiN3:0.008Eu2+ fluorescent material, Sr0.6Ca0.392AlSiN3:0.008Eu2+ fluorescence
Any of powder or two kinds of combination.By inventor, experimental results demonstrate phosphor powder layer of the invention can effectively change
The performance of kind white LED light source, it is 85 to obtain colour rendering index Ra, and light efficiency is 86.8lm/W excellent white light, and its colour temperature can
It is adjusted by encapsulating the simple modulation of condition in the range of 4000K~6000K.
Compounded by the synergistic of the first phosphor powder layer of the invention and the second phosphor powder layer, encapsulating structure of the present invention can be caused
Luminous efficiency it is higher, service life is longer, photochromic uniformity is more preferable.
Further, the lens jacket is double-deck polycarbonate lens layer.Lens jacket of the present invention is a kind of novel double-layer TIR
(Total Internal Reflection) lens, similar two TIR lens are engaged togather, and can effectively reduce lens
Bore and height, preceding exiting surface design can be inner concave curve, and not only emergent light can be adjusted, and can also shorten production injection week
Phase, reduce the cost of product.
Present invention mainly solves fluorescent material type LED deficiencies present in heat dissipation design, existing fluorescent material type LED is being analyzed
On the basis of encapsulating structure and radiating feature, propose to open up while phosphor powder layer and chip are thermally isolated in encapsulating structure solely
The Thermal design of vertical phosphor powder layer heat dissipation path.Drawn again by simulation analysis, increase phosphor powder layer in encapsulation designs
The distance between chip, setting dedicated for the thermal conduction path of phosphor powder layer, can be effectively isolated glimmering on chip base
Heat transfer between light bisque and chip, while the radiating of phosphor powder layer can be improved while lamp bead radial dimension is not increased
Effect.New method for packing comes out the heat dissipation problem of chip and phosphor powder layer independently of each other, had both avoided the mutual of the two and has added
Heat problem, the free degree of lamp bead optical design is increased again.
In the present invention, there are inert gas, and ceramics by the area filling between reflective cup and the base of ceramic
The collective effect of pedestal, the advantages of good thermal conductivity and stability, is had based on base of ceramic, can be the encapsulation of the present invention
Inside configuration provides excellent heat sink conception.The anti-interference bisque that the present invention uses is anti-interference pulvis plate of the prior art
Layer, can be effectively prevented from being disturbed by extraneous factor inside encapsulating structure, ensure stable operation.
Figure of description
Fig. 1 is the structural representation of the present invention.
Embodiment
The technical scheme in the embodiment of the present invention will be clearly and completely described below, it is clear that described implementation
Example only part of the embodiment of the present invention, rather than whole embodiments.It is common based on the embodiment in the present invention, this area
The every other embodiment that technical staff is obtained under the premise of creative work is not made, belong to the model that the present invention protects
Enclose.
Embodiment
Infrared LED integral type encapsulating structure for lossless signal transmission, it is characterised in that including base of ceramic 1, reflective cup
2, for the reflective cup 2 located at the top of base of ceramic 1, the surface of base of ceramic 1 is arranged with infrared emission chip 11
With infrared receiver chip 12, the reflective cup 2 is provided with diversing lens 3, the diversing lens 3 and the infrared emission chip
11 on same axis；The diversing lens 3 include the first phosphor powder layer 31 positioned at the reflective lower section of cup 2, are located at
The second phosphor powder layer 32, the lens jacket 33 of the reflective top of cup 2, first phosphor powder layer, the second phosphor powder layer, lens jacket 3
Arrange successively.
Further, the area filling between the reflective cup 2 and the base of ceramic 1 has inert gas.
Further, the horizontal cross-section of the reflective cup 2 is isosceles trapezoid.
Further, the surface of the reflective cup 2 is provided with anti-interference bisque 21.The anti-interference bisque 21 is prior art
In anti-interference pulvis flaggy.It can be effectively prevented from being disturbed by extraneous factor inside encapsulating structure, ensure stable operation.
Further, the infrared emission chip 11, infrared receiver chip 12 are connected by platinum line 4 and base of ceramic 1 respectively
Connect, good electric connection scheme is provided with this.
In the present invention, there are inert gas, and ceramics by the area filling between reflective cup and the base of ceramic
The collective effect of pedestal, the advantages of good thermal conductivity and stability, is had based on base of ceramic, can be the encapsulation of the present invention
Inside configuration provides excellent heat sink conception.
Further, first phosphor powder layer 31 is Li2-x（AlBO4）：XEu3+, 0≤x≤0.25, easily it is excited, has
There is efficient light guide efficiency.
Further, second phosphor powder layer 32 is (Sr, Ca) AlSiN3:Eu2+ nitride fluorescent bisques.Specifically, institute
It is Sr0.8Ca0.192AlSiN3 to state phosphor powder layer:0.008Eu2+ fluorescent material, Sr0.6Ca0.392AlSiN3:0.008Eu2+ is glimmering
Any of light powder or two kinds of combination.By inventor, experimental results demonstrate phosphor powder layer of the invention can be effective
Improve the performance of white LED light source, it is 85 to obtain colour rendering index Ra, and light efficiency is 86.8lm/W excellent white light, and its colour temperature energy
It is enough to be adjusted by encapsulating the simple modulation of condition in the range of 4000K~6000K.
Compounded by the synergistic of the first phosphor powder layer of the invention and the second phosphor powder layer, encapsulating structure of the present invention can be caused
Luminous efficiency it is higher, service life is longer, photochromic uniformity is more preferable.
Further, the lens jacket 33 is double-deck polycarbonate lens layer.Lens jacket of the present invention is a kind of novel double-layer
TIR (Total Internal Reflection) lens, similar two TIR lens are engaged togather, can effectively reduced
The bore and height of mirror, preceding exiting surface design can be inner concave curve, and not only emergent light can be adjusted, and can also shorten production note
The cycle is moulded, reduces the cost of product.
Present invention mainly solves fluorescent material type LED deficiencies present in heat dissipation design, existing fluorescent material type LED is being analyzed
On the basis of encapsulating structure and radiating feature, propose to open up while phosphor powder layer and chip are thermally isolated in encapsulating structure solely
The Thermal design of vertical phosphor powder layer heat dissipation path.Drawn again by simulation analysis, increase phosphor powder layer in encapsulation designs
The distance between chip, setting dedicated for the thermal conduction path of phosphor powder layer, can be effectively isolated glimmering on chip base
Heat transfer between light bisque and chip, while the radiating of phosphor powder layer can be improved while lamp bead radial dimension is not increased
Effect.New method for packing comes out the heat dissipation problem of chip and phosphor powder layer independently of each other, had both avoided the mutual of the two and has added
Heat problem, the free degree of lamp bead optical design is increased again.
In the present invention, there are inert gas, and ceramics by the area filling between reflective cup and the base of ceramic
The collective effect of pedestal, the advantages of good thermal conductivity and stability, is had based on base of ceramic, can be the encapsulation of the present invention
Inside configuration provides excellent heat sink conception.The anti-interference bisque that the present invention uses is anti-interference pulvis plate of the prior art
Layer, can be effectively prevented from being disturbed by extraneous factor inside encapsulating structure, ensure stable operation.
It is obvious to a person skilled in the art that the invention is not restricted to the details of above-mentioned one exemplary embodiment, Er Qie
In the case of without departing substantially from spirit or essential attributes of the invention, the present invention can be realized in other specific forms.Therefore, no matter
From the point of view of which point, embodiment all should be regarded as exemplary, and be nonrestrictive, the scope of the present invention is by appended power
Profit requires rather than described above limits, it is intended that all in the implication and scope of the equivalency of claim by falling
Change is included in the present invention.
Moreover, it will be appreciated that although the present specification is described in terms of embodiments, not each embodiment is only wrapped
Containing an independent technical scheme, this narrating mode of specification is only that those skilled in the art should for clarity
Using specification as an entirety, the technical solutions in the various embodiments may also be suitably combined, forms those skilled in the art
It is appreciated that other embodiment.It is noted that the technical characteristic not being described in detail in the present invention, can pass through this
Any prior art in field is realized.
Claims (8)
1. the infrared LED integral type encapsulating structure for lossless signal transmission, it is characterised in that including base of ceramic, reflector
Body, for the reflective cup above the base of ceramic, the base of ceramic surface is arranged with infrared emission chip and red
Outer reception chip, the reflective cup are provided with diversing lens, and the diversing lens are in same with the infrared emission chip
On axis；The diversing lens include the first phosphor powder layer below the reflective cup, above reflective cup
Second phosphor powder layer, lens jacket, first phosphor powder layer, the second phosphor powder layer, lens jacket are arranged successively.
2. the infrared LED integral type encapsulating structure according to claim 1 for lossless signal transmission, it is characterised in that
Area filling between the reflective cup and the base of ceramic has inert gas.
3. the infrared LED integral type encapsulating structure according to claim 1 for lossless signal transmission, it is characterised in that
The horizontal cross-section of the reflective cup is isosceles trapezoid.
4. the infrared LED integral type encapsulating structure according to claim 1 for lossless signal transmission, it is characterised in that
The surface of the reflective cup is provided with anti-interference bisque.
5. the infrared LED integral type encapsulating structure according to claim 1 for lossless signal transmission, it is characterised in that
Platinum line is provided between the infrared emission chip and base of ceramic, platinum is provided between infrared receiver chip and base of ceramic
Line.
6. the infrared LED integral type encapsulating structure according to claim 1 for lossless signal transmission, it is characterised in that
First phosphor powder layer is Li2-x（AlBO4）：XEu3+ phosphor powder layers, 0≤x≤0.25.
7. the infrared LED integral type encapsulating structure according to claim 1 for lossless signal transmission, it is characterised in that
Second phosphor powder layer is (Sr, Ca) AlSiN3:Eu2+ nitride fluorescent bisques.
8. the infrared LED integral type encapsulating structure according to claim 1 for lossless signal transmission, it is characterised in that
The lens jacket is double-deck polycarbonate lens layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711034957.8A CN107731986A (en) | 2017-10-30 | 2017-10-30 | Infrared LED integral type encapsulating structure for lossless signal transmission |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711034957.8A CN107731986A (en) | 2017-10-30 | 2017-10-30 | Infrared LED integral type encapsulating structure for lossless signal transmission |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107731986A true CN107731986A (en) | 2018-02-23 |
Family
ID=61202386
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711034957.8A Pending CN107731986A (en) | 2017-10-30 | 2017-10-30 | Infrared LED integral type encapsulating structure for lossless signal transmission |
Country Status (1)
| Country | Link |
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| CN (1) | CN107731986A (en) |
Citations (8)
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|---|---|---|---|---|
| US20080073662A1 (en) * | 2006-09-21 | 2008-03-27 | Bily Wang | Method of manufacturing high power light-emitting device package and structure thereof |
| WO2008055406A1 (en) * | 2006-11-08 | 2008-05-15 | Chang Hsin High Intensity Led (Dong Guan) Co., Ltd | A white light led |
| CN101661987A (en) * | 2009-09-15 | 2010-03-03 | 中山大学 | White light LED packaging structure and packaging method thereof |
| KR101300138B1 (en) * | 2012-05-04 | 2013-08-26 | 재단법인 한국조명연구원 | Led chip package |
| CN205508878U (en) * | 2016-04-22 | 2016-08-24 | 江门市迪司利光电股份有限公司 | Prevent vulcanizing LED packaging structure that interference immunity is strong |
| CN106753350A (en) * | 2017-01-10 | 2017-05-31 | 厦门大学 | A kind of preparation method of rare earth fluorescent powder of aluminium borate |
| CN106935695A (en) * | 2017-05-17 | 2017-07-07 | 广东工业大学 | A kind of uv-LED device |
| CN207651516U (en) * | 2017-10-30 | 2018-07-24 | 深圳莱特光电股份有限公司 | Infrared LED integral type encapsulating structure for lossless signal transmission |
-
2017
- 2017-10-30 CN CN201711034957.8A patent/CN107731986A/en active Pending
Patent Citations (8)
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|---|---|---|---|---|
| US20080073662A1 (en) * | 2006-09-21 | 2008-03-27 | Bily Wang | Method of manufacturing high power light-emitting device package and structure thereof |
| WO2008055406A1 (en) * | 2006-11-08 | 2008-05-15 | Chang Hsin High Intensity Led (Dong Guan) Co., Ltd | A white light led |
| CN101661987A (en) * | 2009-09-15 | 2010-03-03 | 中山大学 | White light LED packaging structure and packaging method thereof |
| KR101300138B1 (en) * | 2012-05-04 | 2013-08-26 | 재단법인 한국조명연구원 | Led chip package |
| CN205508878U (en) * | 2016-04-22 | 2016-08-24 | 江门市迪司利光电股份有限公司 | Prevent vulcanizing LED packaging structure that interference immunity is strong |
| CN106753350A (en) * | 2017-01-10 | 2017-05-31 | 厦门大学 | A kind of preparation method of rare earth fluorescent powder of aluminium borate |
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