CN207651514U - The integral type infrared LED encapsulating structure of anti-external source interference - Google Patents
The integral type infrared LED encapsulating structure of anti-external source interference Download PDFInfo
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- CN207651514U CN207651514U CN201721413023.0U CN201721413023U CN207651514U CN 207651514 U CN207651514 U CN 207651514U CN 201721413023 U CN201721413023 U CN 201721413023U CN 207651514 U CN207651514 U CN 207651514U
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Abstract
The utility model provides a kind of integral type infrared LED encapsulating structure of anti-external source interference, it is characterized in that, including metal substrate, ceramic substrate, reflecting layer, anti-interference layer, layer of inert, phosphor powder layer, the ceramic substrate is set to above the metal substrate, the reflecting layer is set on the ceramic substrate, the reflecting layer is equipped with open area, and the ceramic substrate partial denudation is in the open area；The open area is internally provided with pcb board, LED chip, and the pcb board is set to above the ceramic substrate, and the LED chip is set to above the pcb board, and organosilicon epoxy resin layer is equipped on the outside of the pcb board, LED chip.The utility model proposes a kind of in encapsulating structure opens up the Thermal design of independent phosphor powder layer heat dissipation path while phosphor powder layer and chip are thermally isolated, and solves LED and encapsulates hot problem of transmission.
Description
Technical field
The utility model belongs to LED encapsulation technologies field, and in particular to the integral type infrared LED encapsulation knot of anti-external source interference
Structure.
Background technology
Lamps and lanterns have the advantages that energy-efficient, but the light conversion efficiency of LED chip, in 20%-30% or so, dump energy turns
Being changed to interior energy causes chip temperature to increase.Temperature is excessively high to aggravate lamps and lanterns light decay, to influence lamp life.Studies have shown that warm
Degree not only influences the service life of LED chip, can also cause the issue of ASIC thermal failure of fluorescent powder, or even when temperature is higher than a certain threshold value,
There is not luminescence phenomenon, that is, " thermal quenching " phenomenon in fluorescent powder.The Wen Sheng of fluorescent powder mostlys come from oneself of fluorescent powder light absorption
The mutual heat effect of heat effect and LED chip fever.Actual measurement shows that in the operating condition fluorescent powder temperature is compared with chip temperature height.With
A large amount of commercial applications of white light LEDs, the power of LED chip has also been stepped up to watt grade or more, LED chip heat dissipation technology
Become the key for restricting high-powered LED lamp application.
The thermal design of existing major part LED encapsulation concentrates on improving the heat-sinking capability of LED package outsides, including radiator
Active heat removal and passive heat dissipation design, the heat dissipation design internal about LED encapsulation, especially fluorescent powder silica gel mixture is scattered
Thermal design is also seldom.
Utility model content
In view of this, the utility model provides a kind of heat dissipation design solution LED encapsulation heat transmission by inside LED encapsulation
The integral type infrared LED encapsulating structure of the anti-external source interference of problem.
The technical solution of the utility model is：The integral type infrared LED encapsulating structure of anti-external source interference, including Metal Substrate
Plate, ceramic substrate, reflecting layer, anti-interference layer, layer of inert, phosphor powder layer, the ceramic substrate are set to the Metal Substrate
Above plate, the reflecting layer is set on the ceramic substrate, and the reflecting layer is equipped with open area, and the ceramic substrate
Partial denudation is in the open area；The open area is internally provided with pcb board, LED chip, and the pcb board is set to the pottery
Above porcelain substrate, the LED chip is set to above the pcb board, and organosilicon epoxy tree is equipped on the outside of the pcb board, LED chip
Lipid layer；The anti-interference layer is set to the top in the reflecting layer, and the phosphor powder layer is set to the top of the anti-interference layer, described
Layer of inert is equipped between phosphor powder layer and the anti-interference layer.Particularly, the pcb board is closely connect with LED chip, institute
Layer of inert is stated to be made of the inert gas being set in light-transparent carrier.
Further, first is equipped in the both sides of the pcb board, LED chip inside the organosilicon epoxy resin layer to dissipate
The passage of heat.
Further, the inside offside of the ceramic substrate is equipped with the second heat dissipation channel.
Further, the horizontal cross-section of second heat dissipation channel is " S " type.The setting of heat dissipation channel through this structure,
It can ensure uniformly transferring for heat.
Further, gap is equipped between the organosilicon epoxy resin layer and the anti-interference layer.
Further, the organosilicon epoxy resin layer is spherical structure apart from the surface of the LED chip farther out.
Further, a diameter of 1.2-2.8mm on the surface of the spherical structure.
Further, the horizontal cross-section in the reflecting layer is the right-angled trapezium being oppositely arranged, and the right-angled trapezium is circular arc
The right-angled trapezium of type curl.By the design in the utility model reflecting layer, the reflection angle and reflection efficiency of light can be effectively improved,
Improve the utilization rate of light.
Further, the phosphor powder layer, layer of inert, anti-interference layer thickness ratio be 1-1.5:1.2:1.2-1.6.
The utility model phosphor powder layer, layer of inert, anti-interference layer thickness than setting, can reach improve luminous efficiency it is same
When, the interference of extraneous factor is effectively avoided, ensures stable optical wavelength range, ensures luminous photochromic uniformity and consistency.
Further, the metal substrate is aluminum substrate.
In the utility model, ceramic substrate and metallic plate are combined, ceramic substrate has fabulous heat propagation path, i.e.,
LED component heat transfer, encapsulation possess good hot property, can guarantee that LED component realizes that high brightness, high light intensity, reliability are high, long
Service life, while keeping target LED junction temperature；Again by the high speed conduction effect of metal aluminum substrate, while inside first being coordinated to radiate
Channel, the second heat dissipation channel, can effectively accelerate heat transfer efficiency, solve the problems, such as LED encapsulation structure internal heat transfer.
Further, the anti-interference layer is anti-interference pulvis plate layer in the prior art.
Further, the phosphor powder layer is (Sr, Ca) AlSiN3:Eu2+ nitride fluorescent bisques.Specifically, described glimmering
Light bisque is Sr0.8Ca0.192AlSiN3:0.008Eu2+ fluorescent powders, Sr0.6Ca0.392AlSiN3:0.008Eu2+ fluorescent powders
Any one of or two kinds of combination.By utility model people, experimental results demonstrate the phosphor powder layer of the utility model can
It is effectively improved the performance of white LED light source, it is 85 to obtain colour rendering index Ra, and light efficiency is the excellent white light of 86.8lm/W, and its color
Temperature can be adjusted by encapsulating the simple modulation of condition within the scope of 4000K~6000K.
The utility model mainly solves fluorescent powder type LED deficiencies present in heat dissipation design, is analyzing existing fluorescent powder
On the basis of type LED encapsulation structure and heat dissipation feature, while proposing that phosphor powder layer and chip are thermally isolated in encapsulating structure
Open up the Thermal design of independent phosphor powder layer heat dissipation path.It is obtained, is increased in encapsulation designs glimmering by simulation analysis again
The distance between light bisque and chip, setting, can be effective dedicated for the thermal conduction path of phosphor powder layer on chip base
The heat transfer between phosphor powder layer and chip is isolated, while phosphor powder layer can be improved while not increasing lamp bead radial dimension
Heat dissipation effect.Both new packaging method comes out the heat dissipation problem of chip and phosphor powder layer independently of each other, both avoided
Mutual heating problems, and increase the degree of freedom of lamp bead optical design.
A kind of preparation method of the integral type infrared LED encapsulating structure of anti-external source interference, includes the following steps：
S1. metal substrate is combined with ceramic substrate, the reflecting layer with open area is connected by welding or gluing
Mode is fixed on ceramic substrate, and the ceramic substrate partial denudation is in the open area；
S2. pcb board is set on the exposed ceramic substrate in the open area；
S3. LED chip is fixed on the pcb board in such a way that gluing connects, by the LED chip and pcb board electricity
Connection；
S4. organosilicon epoxy resin layer is coated in the open area, and described inside organosilicon epoxy resin layer
The first heat dissipation channel is arranged in LED chip and pcb board both ends；
S5. anti-interference layer is fixed on the reflecting layer in such a way that gluing connects, in the setting of anti-interference layer surface
Empty light-transparent carrier, being passed through inert gas becomes layer of inert；
S6. phosphor powder layer is coated in the layer of inert, the phosphor powder layer is (Sr, Ca) AlSiN3:Eu2+ nitrogen
Compound phosphor powder layer.
The preparation method of the LED encapsulation structure of the utility model is simple for process, is suitble to industrialized production.It is prepared
LED encapsulation structure has many advantages, such as that luminous efficiency is higher, service life is longer, photochromic consistency is preferable.
Description of the drawings
Fig. 1 is the structural schematic diagram of the utility model.
Specific implementation mode
Below by the technical scheme in the utility model embodiment is clearly and completely described, it is clear that described
Embodiment is only the utility model a part of the embodiment, instead of all the embodiments.Based on the implementation in the utility model
Example, every other embodiment obtained by those of ordinary skill in the art without making creative efforts belong to
The range of the utility model protection.
Embodiment
The integral type infrared LED encapsulating structure of anti-external source interference, including it is metal substrate 1, ceramic substrate 2, reflecting layer 3, anti-
Layer 4, layer of inert 5, phosphor powder layer 6, the ceramic substrate 2 is interfered to be set to 1 top of the metal substrate, the reflecting layer
3 are set on the ceramic substrate 2, and the reflecting layer 3 is equipped with open area, and 2 partial denudation of the ceramic substrate is in institute
State open area；The open area is internally provided with pcb board 7, LED chip 8, and the pcb board 7 is set on the ceramic substrate 2
Side, the LED chip 8 are set to 7 top of the pcb board, and the pcb board 7,8 outside of LED chip are equipped with organosilicon epoxy resin layer
9；The anti-interference layer 4 is set to the top in the reflecting layer 3, and the phosphor powder layer 6 is set to the top of the anti-interference layer 4, institute
It states and is equipped with layer of inert 5 between phosphor powder layer 6 and the anti-interference layer 4.Particularly, the pcb board 7 and LED chip 8 are close
Connection, the layer of inert 5 are made of the inert gas being set in light-transparent carrier.
Further, inside the organosilicon epoxy resin layer 9 first is equipped in the both sides of the pcb board 7, LED chip 8
Heat dissipation channel 91.
Further, the inside offside of the ceramic substrate 2 is equipped with the second heat dissipation channel 21.
Further, the horizontal cross-section of second heat dissipation channel 21 is " S " type.Heat dissipation channel is set through this structure
It sets, can ensure uniformly transferring for heat.
Further, gap is equipped between the organosilicon epoxy resin layer 9 and the anti-interference layer 4.
Further, the organosilicon epoxy resin layer 9 is spherical structure apart from the surface of the LED chip 8 farther out.
Further, a diameter of 1.2-2.8mm on the surface of the spherical structure.
Further, the horizontal cross-section in the reflecting layer 3 is the right-angled trapezium being oppositely arranged, and the right-angled trapezium is circular arc
The right-angled trapezium of type curl.By the design in the utility model reflecting layer 3, the reflection angle and reflection that can effectively improve light are imitated
Rate improves the utilization rate of light.
Further, the phosphor powder layer 6, layer of inert 5, anti-interference layer 4 thickness ratio be 1-1.5:1.2:1.2-
1.6.The utility model phosphor powder layer 6, layer of inert 5, anti-interference layer 4 thickness than setting, can reach raising shine
While efficiency, effectively avoid the interference of extraneous factor, ensure stable optical wavelength range, ensure luminous photochromic uniformity and
Consistency.
Further, the metal substrate 1 is aluminum substrate.
In the utility model, ceramic substrate 2 and metallic plate are combined, ceramic substrate 2 has fabulous heat propagation path,
I.e. LED component heat transfer, encapsulation possess good hot property, can guarantee LED component realize high brightness, high light intensity, reliability it is high,
Long-life, while keeping target LED junction temperature；Again by the high speed conduction effect of metal aluminum substrate, while inside first being coordinated to dissipate
The passage of heat 91, the second heat dissipation channel 21, can effectively accelerate heat transfer efficiency, efficiently solve LED encapsulation structure internal heat transfer
Problem.
Further, the anti-interference layer 4 is anti-interference pulvis plate layer in the prior art.
Further, the phosphor powder layer 6 is (Sr, Ca) AlSiN3:Eu2+ nitride fluorescents bisque 6.Specifically, described
Phosphor powder layer 6 is Sr0.8Ca0.192AlSiN3:0.008Eu2+ fluorescent powders, Sr0.6Ca0.392AlSiN3:0.008Eu2+ is glimmering
Any one of light powder or two kinds of combination.By utility model people, experimental results demonstrate the phosphor powder layers 6 of the utility model
It can be effectively improved the performance of white LED light source, it is 85 to obtain colour rendering index Ra, and light efficiency is the excellent white light of 86.8lm/W, and
Its colour temperature can be adjusted by encapsulating the simple modulation of condition within the scope of 4000K~6000K.
The utility model mainly solves fluorescent powder type LED deficiencies present in heat dissipation design, is analyzing existing fluorescent powder
On the basis of type LED encapsulation structure and heat dissipation feature, while proposing that phosphor powder layer 6 and chip are thermally isolated in encapsulating structure
Open up the Thermal design of 6 heat dissipation path of independent phosphor powder layer.It is obtained, is increased in encapsulation designs glimmering by simulation analysis again
The distance between light bisque 6 and chip, on chip base be arranged dedicated for phosphor powder layer 6 thermal conduction path, Neng Gouyou
Heat transfer between effect isolation phosphor powder layer 6 and chip, while fluorescence can be improved while not increasing lamp bead radial dimension
The heat dissipation effect of bisque 6.New packaging method comes out the heat dissipation problem of chip and phosphor powder layer 6 independently of each other, both avoids
The mutual heating problems of the two, and increase the degree of freedom of lamp bead optical design.
A kind of preparation method of the integral type infrared LED encapsulating structure of anti-external source interference, includes the following steps：
S1. metal substrate 1 is combined with ceramic substrate 2, the reflecting layer 3 with open area is connected by welding or gluing
Mode be fixed on ceramic substrate 2,2 partial denudation of the ceramic substrate is in the open area；
S2., pcb board 7 is set on the exposed ceramic substrate 2 in the open area；
S3. LED chip 8 is fixed on the pcb board 7 in such a way that gluing connects, by the LED chip 8 and pcb board
7 electrical connections；
S4. in open area coating organosilicon epoxy resin layer 9, and in institute inside organosilicon epoxy resin layer 9
It states LED chip 8 and the first heat dissipation channel 91 is arranged in 7 both ends of pcb board；
S5. anti-interference layer 4 is fixed on the reflecting layer 3 in such a way that gluing connects, is arranged on 4 surface of anti-interference layer
Hollow light-transparent carrier, being passed through inert gas becomes layer of inert 5；
S6. phosphor powder layer 6 is coated in the layer of inert 5, the phosphor powder layer 6 is (Sr, Ca) AlSiN3:Eu2+
Nitride fluorescent bisque 6.
The preparation method of the LED encapsulation structure of the utility model is simple for process, is suitble to industrialized production.It is prepared
LED encapsulation structure has many advantages, such as that luminous efficiency is higher, service life is longer, photochromic consistency is preferable.
It is obvious to a person skilled in the art that the present invention is not limited to the details of the above exemplary embodiments, and
And without departing substantially from the spirit or essential attributes of the utility model, it can realize that this practicality is new in other specific forms
Type.Therefore, in all respects, the present embodiments are to be considered as illustrative and not restrictive, this practicality is new
The range of type is indicated by the appended claims rather than the foregoing description, it is intended that containing in the equivalent requirements of the claims will be fallen
All changes in justice and range are embraced therein.
In addition, it should be understood that although this specification is described in terms of embodiments, but not each embodiment is only wrapped
Containing an independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should
It considers the specification as a whole, the technical solutions in the various embodiments may also be suitably combined, forms those skilled in the art
The other embodiment being appreciated that.It is noted that the technical characteristic not being described in detail in the utility model, can lead to
Any prior art crossed in this field is realized.
Claims (9)
1. the integral type infrared LED encapsulating structure of anti-external source interference, which is characterized in that including metal substrate, ceramic substrate, reflection
Layer, anti-interference layer, layer of inert, phosphor powder layer, the ceramic substrate are set to above the metal substrate, the reflecting layer
It is set on the ceramic substrate, the reflecting layer is equipped with open area, and the ceramic substrate partial denudation is opened in described
Mouth region domain；The open area is internally provided with pcb board, LED chip, and the pcb board is set to above the ceramic substrate, described
LED chip is set to above the pcb board, and organosilicon epoxy resin layer is equipped on the outside of the pcb board, LED chip；It is described anti-interference
Layer be set to the reflecting layer top, the phosphor powder layer be set to the anti-interference layer top, the phosphor powder layer with it is described
Layer of inert is equipped between anti-interference layer.
2. the integral type infrared LED encapsulating structure of anti-external source interference according to claim 1, which is characterized in that described to have
Inside machine epoxy silicone layer the first heat dissipation channel is equipped in the both sides of the pcb board, LED chip.
3. the integral type infrared LED encapsulating structure of anti-external source interference according to claim 1, which is characterized in that the pottery
The inside offside of porcelain substrate is equipped with the second heat dissipation channel.
4. the integral type infrared LED encapsulating structure of anti-external source interference according to claim 3, which is characterized in that described the
The horizontal cross-section of two heat dissipation channels is " S " type.
5. the integral type infrared LED encapsulating structure of anti-external source interference according to claim 1, which is characterized in that described to have
Machine epoxy silicone layer is spherical structure apart from the surface of the LED chip farther out.
6. the integral type infrared LED encapsulating structure of anti-external source interference according to claim 5, which is characterized in that the ball
A diameter of 1.2-2.8mm on the surface of face structure.
7. the integral type infrared LED encapsulating structure of anti-external source interference according to claim 1, which is characterized in that described anti-
The horizontal cross-section for penetrating layer is the right-angled trapezium being oppositely arranged, and the right-angled trapezium is the right-angled trapezium of circular arc type curl.
8. the integral type infrared LED encapsulating structure of anti-external source interference according to claim 1, which is characterized in that described glimmering
Light bisque, layer of inert, anti-interference layer thickness ratio be 1-1.5:1.2:1.2-1.6.
9. the integral type infrared LED encapsulating structure of anti-external source interference according to claim 1, which is characterized in that the gold
Category substrate is aluminum substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721413023.0U CN207651514U (en) | 2017-10-30 | 2017-10-30 | The integral type infrared LED encapsulating structure of anti-external source interference |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721413023.0U CN207651514U (en) | 2017-10-30 | 2017-10-30 | The integral type infrared LED encapsulating structure of anti-external source interference |
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| CN207651514U true CN207651514U (en) | 2018-07-24 |
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| CN201721413023.0U Expired - Fee Related CN207651514U (en) | 2017-10-30 | 2017-10-30 | The integral type infrared LED encapsulating structure of anti-external source interference |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109728149A (en) * | 2017-10-30 | 2019-05-07 | 深圳莱特光电股份有限公司 | The integral type infrared LED encapsulating structure and preparation method thereof of anti-external source interference |
| CN113554832A (en) * | 2020-04-24 | 2021-10-26 | 英研智能移动股份有限公司 | Doorbell subassembly and hanging seat |
-
2017
- 2017-10-30 CN CN201721413023.0U patent/CN207651514U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109728149A (en) * | 2017-10-30 | 2019-05-07 | 深圳莱特光电股份有限公司 | The integral type infrared LED encapsulating structure and preparation method thereof of anti-external source interference |
| CN113554832A (en) * | 2020-04-24 | 2021-10-26 | 英研智能移动股份有限公司 | Doorbell subassembly and hanging seat |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180724 Termination date: 20191030 |
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| CF01 | Termination of patent right due to non-payment of annual fee |