CN103151445B - Low thermal resistance LED (Light Emitting Diode) packaging structure and packaging method - Google Patents
Low thermal resistance LED (Light Emitting Diode) packaging structure and packaging method Download PDFInfo
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- CN103151445B CN103151445B CN201310067793.4A CN201310067793A CN103151445B CN 103151445 B CN103151445 B CN 103151445B CN 201310067793 A CN201310067793 A CN 201310067793A CN 103151445 B CN103151445 B CN 103151445B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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Abstract
The invention relates to a low thermal resistance LED (Light Emitting Diode) packaging structure, which comprises an LED chip, a supporting circuit board and a sealing glue layer, wherein the supporting circuit board comprises a circuit board, a reflecting layer manufactured under the circuit board and a metal heat-conducting layer manufactured under the reflecting layer; a through hole is formed in the middle of the circuit board; the LED chip is positioned inside the through hole of the circuit board; the LED chip is electrically connected with the circuit board through a metal lead wire; and the LED chip in electrical connection is fixedly packaged inside the through hole of the circuit board in the supporting circuit board through the sealing glue layer. The Low thermal resistance LED packaging structure has the advantage of being free of bracket, the light emission efficiency of the LED chip can be improved through the LED packaging structure, and the heat generated by the LED chip is quickly dispersed through the metal heat-conducting layer and conducted to the surface of a radiator, so that middle links of the traditional packaging structure are eliminated, the thermal resistance is obviously reduced, the brightness and reliability are improved, the integral manufacturing cost is reduced, and the homogeneity of products is improved.
Description
Technical field
The invention belongs to technical field of semiconductors, particularly relate to a kind of low thermal resisting LED (LED) encapsulating structure and
Method for packing.
Background technology
Light emitting diode (light emitting diode.LED) as new and effective solid light source, have the long-life,
The remarkable advantages such as energy-conservation, environmental protection, are that the mankind illuminate leaping again after electric filament lamp, fluorescent lamp in history, are considered
It is the illumination new technique in the 3rd generation, its economy and social meaning are huge.
With the continuous development of semiconductor technology, LED development in science and technology is rapid, and LED is in luminous intensity, peak wavelength, half-wave
Improve a lot in the performance parameters such as bandwidth.As conventional light source, semiconductor light-emitting-diode (LED) also can during operation
Produce heat, its how many luminous efficiency depending on entirety.Power up outside under energy effect, the radiation recombination in electronics and hole is sent out
Raw electroluminescent, the light radiating near PN junction also needs semiconductor medium and encapsulation medium through chip (chip) itself
Extraneous (air) just can be arrived at.Combination current injection efficiency, radioluminescence quantum efficiency, chip exterior light extraction efficiency etc.,
The input electric energy of probably only 30-40% is converted into luminous energy eventually, and the energy of remaining 60-70% is mainly with non-radiative recombination generation
The form conversion heat energy of lattice vibration.The radiating of LED is increasingly paid attention to by people now, this is because the light decay of LED or its
Life-span is directly relevant with its junction temperature, and the bad junction temperature that radiates is just high, and junction temperature not only affects the long-time life-span, yet directly affects short
The luminous efficiency of time.Often reduce by 10 DEG C of life-spans according to A Leiniusi rule temperature and can extend 2 times, the feature of LED chip be
High heat is produced in minimum volume, and the thermal capacity very little of LED itself, so must be with speed the fastest these heat
Amount conducts, and otherwise will produce very high junction temperature.In order to as much as possible heat is drawn out to outside chip, current encapsulation
Form is all that LED chip elargol is bonded on copper stent, then copper stent bottom is coated heat-conducting silicone grease and is welded to cloth again
Have on the aluminium base heat sink of circuit, finally aluminium base heat sink is fixed on radiator by heat-conducting silicone grease, LED chip produces
Heat through 5 layers of dielectric layer, this adds increased series resistances, leads to from LED chip itself to final radiator, intermediate demand
Entire thermal resistance after LED encapsulation cannot reduce.In order to reduce the entire thermal resistance after LED encapsulation, also having will be straight for LED chip elargol bonding
Connect and be encapsulated on the aluminium base heat sink being furnished with circuit, then aluminium base heat sink is fixed on radiator by heat-conducting silicone grease, this
From LED chip itself to final radiator, centre also needs to through 4 layers of dielectric layer the heat that sample LED chip produces, and LED seals
Entire thermal resistance after dress is still very high.
LED chip is exactly directly welded on radiator by the best way by solder, LED chip produce heat from
LED chip itself only just need to can reach final radiator through one layer of dielectric layer (solder), and such series resistances are minimum, but
Radiator volume is larger, and surface is not easy to carry out circuit fabrication, so that this method is implemented extremely difficult.
Content of the invention
It is an object of the invention to, provide a kind of LED encapsulation structure of low thermal resistance and method for packing, by this method for packing
The LED encapsulation structure of the low thermal resistance obtaining, can improve the light extraction efficiency of LED chip, and make the heat warp of LED chip generation
Cross metal heat-conducting layer to spread rapidly and be transmitted to spreader surface, save the intermediate link of conventional package, under thermal resistance is obvious
Fall, brightness and reliability are improved, and integral manufacturing cost declines, and improves homogeneity of product.
The present invention provides a kind of low thermal resistance LED encapsulating structure, and it includes：
LED chip；
One support circuit board, including：One circuit board；One reflecting layer being produced under circuit board and one is produced under reflecting layer
Metal heat-conducting layer, there is a through hole centre of this circuit board, and in the through hole of circuit board, this LED chip leads to described LED chip
Cross metal lead wire to be electrically connected with circuit board；
One adhesive layer, the LED chip being electrically connected with sealing is being supported the logical of the circuit board in circuit board by this adhesive layer
In the hole.
The present invention also provides a kind of method for packing of low thermal resistance LED encapsulating structure, and it comprises the following steps：
Step 1：Take a circuit board, this circuit board has a through hole；
Step 2：The back side of circuit board is sticked on resistant to elevated temperatures cohesive material；
Step 3：LED chip is fixed in the through hole of circuit board；
Step 4：With metal lead wire, LED chip is electrically connected with circuit board；
Step 5：With adhesive layer by LED chip sealing in the through hole of circuit board, and solidify；
Step 6；Circuit board after solidification is taken out, removes the cohesive material of back of circuit board, expose the bottom of LED chip
Face；
Step 7：Using evaporation, sputtering or electric plating method, in back side making reflecting layer and the metal heat-conducting of circuit board
Layer, this circuit board, reflecting layer and metal heat-conducting layer composition support circuit board, complete the preparation of LED encapsulation structure.
The invention has the beneficial effects as follows, the LED encapsulation structure of the low thermal resistance being obtained by this method for packing, its advantage is no
Support, this LED encapsulation structure can improve the light extraction efficiency of LED chip, and so that the heat that LED chip produces is led through metal
Thermosphere spreads rapidly, and is transmitted to spreader surface, saves the intermediate link of conventional package, and thermal resistance is decreased obviously, brightness
It is improved with reliability, integral manufacturing cost declines, and improves homogeneity of product.
Brief description
In order that the objects, technical solutions and advantages of the present invention become more apparent, below in conjunction with drawings and Examples, right
The present invention is further elaborated, wherein：
Fig. 1 is the structural representation of LED encapsulation method one embodiment of the present invention；
Fig. 2 is the structural representation of another embodiment of LED encapsulation method of the present invention；
Fig. 3 is method of the present invention flow chart；
Specific embodiment
Refer to shown in Fig. 1 and Fig. 2, the present invention provides a kind of low thermal resistance LED encapsulating structure, and it includes：
LED chip 1, the quantity of this LED chip 1 is one more than or equal to the quantity of LED chip 1 in 1, Fig. 1, in Fig. 2
The quantity of LED chip 1 be multiple, this LED chip 1 is solid semiconductor chip, its luminescent material be HONGGUANG, blue and green light or
The luminescent material of ultraviolet light, LED chip 1 can be high-power chip, middle power chip, or small-power chip, LED chip 1
Can be connection in series-parallel composition or many multi-wavelengths between 1 LEDs chip or many single wavelength LED chips
Connection in series-parallel composition between LED chip.Described LED chip 1 is the LED chip of Single wavelength or multi-wavelength, when the number of this LED chip 1
Measure for multiple when, be serial or parallel connection (refering to Fig. 2) between this LED chip 1；
One support circuit board 2, including：One circuit board 21；The reflecting layer 22 and one that one is produced under circuit board 21 is produced on
Metal heat-conducting layer 23 under reflecting layer 22, there is a through hole 24 centre of this circuit board 21, and described LED chip 1 is located at circuit board 21
Through hole 24 in, this LED chip 1 is electrically connected with circuit board 21 by metal lead wire 3, this metal lead wire 3 be generally gold thread or
Aluminum steel, a diameter of 10-70 micron, plays the effect being conductively connected；The section of the through hole 24 in the middle of this circuit board 21 is V shaped hole,
Stepped hole or U-shaped hole, different sections can obtain the effect of different light extractions；This through hole 24 be shaped as circular hole, square hole or not
Regular hole, the shape of different through holes can obtain different optical field distribution；The inwall of this through hole 24 is coated with the metal of high reflectance
Layer or blooming, the material of this metal level or blooming can be silver, aluminum, or the material of other high reflectances, and thickness is
Tens angstroms are arrived hundreds of micron, play the absorption to light for the inwall reducing through hole 24, improve light extraction efficiency；The material of this circuit board 21
It is pcb board, aluminium base or ceramic substrate, circuit layer has been done on surface, plays fixing LED chip 1, support whole encapsulating structure, real
The now whole effect that between encapsulating structure and external circuit, circuit is connected；The material in this reflecting layer 22 is optical reflectance coating, permissible
It is silver or aluminum, the thickness in reflecting layer 22 is tens angstroms and arrives hundreds of micron, plays and will incide the light of whole encapsulating structure bottom surface
Reflect away, reduce the absorption to light for the whole encapsulating structure bottom surface, improve the effect of light extraction efficiency；It is produced under reflecting layer 22
The material of metal heat-conducting layer 23 is the material of high thermal conductivity, can be copper or aluminum, and the thickness of metal heat-conducting layer 23 is tens microns
To thousand of microns, play the heat sending when LED is lighted and spread rapidly through metal heat-conducting layer, and it is fast to be transmitted to spreader surface
The effect that speed sheds, reduces the junction temperature of LED, reduces the thermal resistance of whole encapsulating structure, improves the luminous efficiency of LED, improves LED's
Reliability.
One adhesive layer 4, the LED chip being electrically connected with 1 sealing is being supported the circuit board in circuit board 2 by this adhesive layer 4
In 21 through hole 24, the material of this adhesive layer 4 is silica gel or resin, is mixed with fluorescent material in this adhesive layer 4；Fluorescent material can be yellow
Color fluorescent material, red fluorescence powder, any fluorescent material that can be excited by LED chip 1 such as green emitting phosphor, particle diameter is several nanometers
To tens microns, fluorescent material is mixed homogeneously by required ratio with silica gel or resin, and the light that LED chip 1 sends and fluorescent material are by LED
Chip 1 excites the light sending to be mixed to form the light that whole LED encapsulation structure finally obtains.
Refer to shown in Fig. 3, the present invention provides a kind of method for packing of low thermal resistance LED encapsulating structure, and it includes following step
Suddenly：
Step 1：Take a circuit board 21, this circuit board 21 have a through hole 24, the through hole 24 in the middle of this circuit board 21 disconnected
Face is V shaped hole, stepped hole or U-shaped hole, and different sections can obtain the effect of different light extractions；This through hole 24 be shaped as justify
Hole, square hole or irregular hole, different shape of through holes can obtain different optical field distribution；The inwall of this through hole 24 is coated with high anti-
Penetrate metal level or the blooming of rate, the material of this metal level or blooming can be silver, aluminum, or the material of other high reflectances
Material, thickness is tens angstroms and arrives hundreds of micron, plays the absorption to light for the inwall reducing through hole 24, improves light extraction efficiency；This circuit
The material of plate 21 is pcb board, aluminium base or ceramic substrate, and circuit layer has been done on surface, plays fixing LED chip 1, supports whole envelope
Assembling structure, realizes the effect that between whole encapsulating structure and external circuit, circuit is connected；
Step 2：The back side of circuit board 21 is sticked on resistant to elevated temperatures cohesive material, this cohesive material plays temporarily to be fixed
The effect of LED chip 1；
Step 3：LED chip 1 is fixed in the through hole 24 of circuit board 21, the quantity of this LED chip 1 is more than or equal to 1,
In Fig. 1, the quantity of LED chip 1 is one, and in Fig. 2, the quantity of LED chip 1 is multiple, and this LED chip 1 is solid semiconductor core
Piece, its luminescent material is the luminescent material of HONGGUANG, blue and green light or ultraviolet light, and LED chip 1 can be high-power chip, middle work(
Rate chip, or small-power chip, described LED chip 1 is the LED chip of Single wavelength or multi-wavelength, and LED chip 1 can be 1
Between LED chip or many single wavelength LED chips connection in series-parallel composition or many multi-wavelength LED chips it
Between connection in series-parallel composition；When the quantity of this LED chip 1 is multiple, it is serial or parallel connection (refering to Fig. 2) between this LED chip 1；
Step 4：With metal lead wire 3, LED chip 1 is electrically connected with circuit board 21, this metal lead wire 3 be generally gold thread or
Aluminum steel, a diameter of 10-70 micron, plays the effect being conductively connected；
Step 5：With adhesive layer 4 by LED chip 1 sealing in the through hole 24 of circuit board 21, and solidify, this adhesive layer 4
Material is silica gel or resin, is mixed with fluorescent material, fluorescent material can be yellow fluorescent powder, red fluorescence powder in this adhesive layer 4, green
Any fluorescent material that can be excited by LED chip 1 such as fluorescent material, particle diameter is several nanometers to tens microns, fluorescent material and silica gel
Or resin is by required ratio mix homogeneously, the light that LED chip 1 sends is excited the light sending to mix shape with fluorescent material by LED chip 1
Become the light that whole LED encapsulation structure finally obtains；
Step 6：Circuit board 21 after sealing is put into baking in baking oven, so that sealing is solidified, general baking temperature is 80150
℃；
Step 7；Circuit board 21 after solidification is taken out, removes the cohesive material at circuit board 21 back side, expose LED chip 1
Bottom surface；
Step 7：Using evaporation, sputtering or electric plating method, in back side making reflecting layer 22 and the metal of circuit board 21
Heat-conducting layer 23, the material in this reflecting layer 22 is optical reflectance coating, can be silver or aluminum, the thickness in reflecting layer 22 be tens angstroms arrive several
Hundred microns, play and the light inciding whole encapsulating structure bottom surface is reflected away, reduce whole encapsulating structure bottom surface to light
Absorb, improve the effect of light extraction efficiency；The material of the metal heat-conducting layer 23 being produced under reflecting layer 22 is the material of high thermal conductivity,
Can be copper or aluminum, the thickness of metal heat-conducting layer 23 is tens microns and arrives thousand of microns, plays the heat warp sending when lighting LED
Cross metal heat-conducting layer to spread rapidly, and be transmitted to the effect that spreader surface quickly sheds, reduce the junction temperature of LED, reduce whole
The thermal resistance of encapsulating structure, improves the luminous efficiency of LED, improves the reliability of LED；This circuit board 21, reflecting layer 22 and metal are led
Thermosphere 23 composition supports circuit board 2, completes the preparation of LED encapsulation structure.
The above, be only embodiments of the invention, and not the present invention is made with any pro forma restriction, every
Any simple modification, equivalent variations and the modification substantially above example made according to the technology of the present invention, all still falls within this
Within the scope of bright technical scheme, therefore protection scope of the present invention is worked as and is defined by claims.
Claims (12)
1. a kind of low thermal resistance LED encapsulating structure, it includes：
LED chip；
One supports circuit board by a circuit board；One reflecting layer being produced under circuit board and a metal being produced under reflecting layer are led
Thermosphere forms, and this reflecting layer and metal heat-conducting layer are made using evaporation, sputtering or electric plating method, and the centre of this circuit board has
One through hole, in the through hole of circuit board, this LED chip is passed through metal lead wire and is electrically connected with circuit board described LED chip；
One adhesive layer, this adhesive layer is by the LED chip being electrically connected with sealing in the through hole of the circuit board supporting in circuit board.
2. low thermal resistance LED encapsulating structure as claimed in claim 1, is wherein fixed on the number of the LED chip in circuit board through-hole
Amount is more than or equal to 1, and the section of the through hole in the middle of this circuit board is V shaped hole, stepped hole or U-shaped hole；This through hole be shaped as justify
Hole, square hole or irregular hole；The inwall of this through hole is coated with metal level or the blooming of high reflectance.
3. low thermal resistance LED encapsulating structure as claimed in claim 2, wherein LED chip are solid semiconductor chips, its luminous material
Material is the luminescent material of HONGGUANG, blue and green light or ultraviolet light, and described LED chip is the LED chip of Single wavelength or multi-wavelength, should
LED chip is serial or parallel connection.
4. low thermal resistance LED encapsulating structure as claimed in claim 1, the material of wherein this circuit board is pcb board, aluminium base or pottery
Porcelain substrate.
5. low thermal resistance LED encapsulating structure as claimed in claim 1, the wherein material of this adhesive layer are silica gel or resin, this envelope
It is mixed with fluorescent material in glue-line.
6. low thermal resistance LED encapsulating structure as claimed in claim 1, the wherein material in reflecting layer are optical reflectance coating, reflecting layer
Thickness be tens angstroms arrive hundreds of micron；The material of this metal heat-conducting layer is copper or aluminum, and the thickness of metal heat-conducting layer is micro- for tens
Rice arrives thousand of microns.
7. a kind of method for packing of low thermal resistance LED encapsulating structure, it comprises the following steps：
Step 1：Take a circuit board, this circuit board has a through hole；
Step 2：The back side of circuit board is sticked on resistant to elevated temperatures cohesive material；
Step 3：LED chip is fixed in the through hole of circuit board；
Step 4：With metal lead wire, LED chip is electrically connected with circuit board；
Step 5：With adhesive layer by LED chip sealing in the through hole of circuit board, and solidify；
Step 6：Circuit board after solidification is taken out, removes the cohesive material of back of circuit board, expose the bottom surface of LED chip；
Step 7：Using evaporation, sputtering or electric plating method, in back side making reflecting layer and the metal heat-conducting layer of circuit board, should
Circuit board, reflecting layer and metal heat-conducting layer composition support circuit board, complete the preparation of LED encapsulation structure.
8. the method for packing of low thermal resistance LED encapsulating structure as claimed in claim 7, is wherein fixed in circuit board through-hole
The quantity of LED chip is more than or equal to 1, and the section of the through hole in the middle of this circuit board is V shaped hole, stepped hole or U-shaped hole；This through hole
Be shaped as circular hole, square hole or irregular hole；The inwall of this through hole is coated with metal level or the blooming of high reflectance.
9. the method for packing of low thermal resistance LED encapsulating structure as claimed in claim 8, wherein LED chip are solid semiconductor cores
Piece, its luminescent material is the luminescent material of HONGGUANG, blue and green light or ultraviolet light, and described LED chip is Single wavelength or multi-wavelength
LED chip, this LED chip is serial or parallel connection.
10. the method for packing of low thermal resistance LED encapsulating structure as claimed in claim 7, the material of wherein this circuit board is PCB
Plate, aluminium base or ceramic substrate.
The method for packing of 11. low thermal resistance LED encapsulating structures as claimed in claim 7, the wherein material of this adhesive layer are silica gel
Or resin, it is mixed with fluorescent material in this adhesive layer.
The method for packing of 12. low thermal resistance LED encapsulating structures as claimed in claim 7, the wherein material in reflecting layer are that optics is anti-
Penetrate film, the thickness in reflecting layer is tens angstroms and arrives hundreds of micron；The material of this metal heat-conducting layer is copper or aluminum, the thickness of metal heat-conducting layer
Spend and arrive thousand of microns for tens microns.
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| CN201310067793.4A CN103151445B (en) | 2013-03-04 | 2013-03-04 | Low thermal resistance LED (Light Emitting Diode) packaging structure and packaging method |
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| CN201310067793.4A CN103151445B (en) | 2013-03-04 | 2013-03-04 | Low thermal resistance LED (Light Emitting Diode) packaging structure and packaging method |
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| CN103151445B true CN103151445B (en) | 2017-02-08 |
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| CN104576900A (en) * | 2015-01-07 | 2015-04-29 | 中国科学院半导体研究所 | Packaging method of LED chip |
| CN106898684A (en) * | 2017-04-14 | 2017-06-27 | 桂林电子科技大学 | A kind of multi-chip and UVLED array supports of connecting |
| CN108591974A (en) * | 2018-04-24 | 2018-09-28 | 武汉华星光电技术有限公司 | Drive substrate, preparation method and Minitype LED array emitting backlight module |
| CN109856860B (en) * | 2019-03-29 | 2022-04-19 | 深圳创维－Rgb电子有限公司 | Liquid crystal display module and display device |
| CN110854255A (en) * | 2019-11-21 | 2020-02-28 | 常州市五一佳丽汽车部件有限公司 | Preparation method of LED patch of car light surface light source |
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| CN2720646Y (en) * | 2004-07-29 | 2005-08-24 | 亿光电子工业股份有限公司 | High-power light emitting diode package structure |
| CN202195315U (en) * | 2011-08-23 | 2012-04-18 | 佛山市国星光电股份有限公司 | LED (light-emitting diode) surface light source device |
| CN102738351A (en) * | 2011-04-02 | 2012-10-17 | 展晶科技(深圳)有限公司 | Light emitting diode (LED) packaging structure and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009111273A (en) * | 2007-10-31 | 2009-05-21 | Toshiba Lighting & Technology Corp | Light-emitting device |
| KR101219106B1 (en) * | 2011-08-01 | 2013-01-11 | 삼성전자주식회사 | Light emitting device package and methdod of manufacturing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2720646Y (en) * | 2004-07-29 | 2005-08-24 | 亿光电子工业股份有限公司 | High-power light emitting diode package structure |
| CN102738351A (en) * | 2011-04-02 | 2012-10-17 | 展晶科技(深圳)有限公司 | Light emitting diode (LED) packaging structure and manufacturing method thereof |
| CN202195315U (en) * | 2011-08-23 | 2012-04-18 | 佛山市国星光电股份有限公司 | LED (light-emitting diode) surface light source device |
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