CN103151445A - Low thermal resistance LED (Light Emitting Diode) packaging structure and packaging method - Google Patents
Low thermal resistance LED (Light Emitting Diode) packaging structure and packaging method Download PDFInfo
- Publication number
- CN103151445A CN103151445A CN2013100677934A CN201310067793A CN103151445A CN 103151445 A CN103151445 A CN 103151445A CN 2013100677934 A CN2013100677934 A CN 2013100677934A CN 201310067793 A CN201310067793 A CN 201310067793A CN 103151445 A CN103151445 A CN 103151445A
- Authority
- CN
- China
- Prior art keywords
- circuit board
- hole
- led chip
- led
- thermal resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
Abstract
The invention relates to a low thermal resistance LED (Light Emitting Diode) packaging structure, which comprises an LED chip, a supporting circuit board and a sealing glue layer, wherein the supporting circuit board comprises a circuit board, a reflecting layer manufactured under the circuit board and a metal heat-conducting layer manufactured under the reflecting layer; a through hole is formed in the middle of the circuit board; the LED chip is positioned inside the through hole of the circuit board; the LED chip is electrically connected with the circuit board through a metal lead wire; and the LED chip in electrical connection is fixedly packaged inside the through hole of the circuit board in the supporting circuit board through the sealing glue layer. The Low thermal resistance LED packaging structure has the advantage of being free of bracket, the light emission efficiency of the LED chip can be improved through the LED packaging structure, and the heat generated by the LED chip is quickly dispersed through the metal heat-conducting layer and conducted to the surface of a radiator, so that middle links of the traditional packaging structure are eliminated, the thermal resistance is obviously reduced, the brightness and reliability are improved, the integral manufacturing cost is reduced, and the homogeneity of products is improved.
Description
Technical field
The invention belongs to technical field of semiconductors, refer to especially a kind of low thermal resisting LED (LED) encapsulating structure and method for packing.
Background technology
Light-emitting diode (light emitting diode.LED) is as new and effective solid light source, have the remarkable advantages such as long-life, energy-conservation, environmental protection, mankind's leaps again after incandescent lamp, fluorescent lamp on history of throwing light on, be considered to the illumination new technology in the 3rd generation, its economy and social effect are huge.
Along with the development of semiconductor technology, the LED development in science and technology is rapid, and LED improves a lot on the performance parameters such as luminous intensity, peak wavelength, half-wave bandwidth.The same with conventional light source, semiconductor light-emitting-diode (LED) also can produce heat during operation, and how much it depends on whole luminous efficiency.Power up outside under energy, the radiation recombination generation electroluminescence in electronics and hole, semiconductor medium and encapsulation medium that near the light that radiates PN junction also need pass through chip (chip) itself just can arrive at external world's (air).Comprehensive electric current injection efficiency, radioluminescence quantum efficiency, chip exterior light take out efficient etc., final probably to only have the input electric energy conversion of 30-40% be luminous energy, and the energy of all the other 60-70% mainly transforms heat energy with the form of the lattice vibration of non-radiative compound generation.The heat radiation of LED is more and more paid attention to by people now, and this is that the bad junction temperature of heat radiation is just high because the light decay of LED or its life-span are directly relevant with its junction temperature, and junction temperature not only affects the long-time life-span, yet directly affects the luminous efficiency of short time.Can extend 2 times according to 10 ℃ of life-spans of the every reduction of A Leiniusi rule temperature, the characteristics of LED chip are at the high heat of minimum volume generation, and the thermal capacity of LED itself is very little, thus must conduct these heats with the fastest speed, otherwise will produce very high junction temperature.In order as much as possible heat to be drawn out to chip outside, present packing forms is all that LED chip is bonded on copper stent with elargol, then heat-conducting silicone grease being coated in copper stent bottom is welded on the aluminium base heating panel that is furnished with circuit again, at last aluminium base heating panel is fixed on radiator by heat-conducting silicone grease, the heat that LED chip produces is from LED chip self to final radiator, intermediate demand is through 5 layers of dielectric layer, this has just increased series resistances, causes the entire thermal resistance after LED encapsulates to reduce.In order to reduce the entire thermal resistance after LED encapsulates, also have LED chip directly is encapsulated on the aluminium base heating panel that is furnished with circuit with elargol is bonding, then aluminium base heating panel is fixed on radiator by heat-conducting silicone grease, the heat of LED chip generation is from LED chip self to final radiator like this, the centre also needs through 4 layers of dielectric layer, and the entire thermal resistance after the LED encapsulation is still very high.
The best way directly is welded on radiator on by scolder LED chip exactly, the heat that LED chip produces only needs just can arrive final radiator through one deck dielectric layer (scolder) from LED chip self, series resistances is minimum like this, but the radiator volume is larger, the surface is not easy to carry out circuit fabrication, this method is implemented very difficult.
Summary of the invention
The object of the invention is to, a kind of LED encapsulating structure and method for packing of low thermal resistance are provided, the LED encapsulating structure of the low thermal resistance that obtains by this method for packing, can improve the light extraction efficiency of LED chip, and make the heat that LED chip produces spread rapidly and be transmitted to spreader surface through the metal guide thermosphere, save the intermediate link of conventional package structure, thermal resistance obviously descends, brightness and reliability are improved, and the integral manufacturing cost descends, and has improved homogeneity of product.
The invention provides a kind of low thermal resistance LED encapsulating structure, it comprises:
LED chip;
One support circuit plate comprises: a circuit board; One is produced on reflector and under circuit board is produced on metal guide thermosphere under the reflector, and there is a through hole centre of this circuit board, and described LED chip is positioned at the through hole of circuit board, and this LED chip is electrically connected by metal lead wire and circuit board;
One adhesive layer, this adhesive layer will be electrically connected good LED chip and admittedly be enclosed in the through hole of the circuit board in the support circuit plate.
The present invention also provides a kind of method for packing of low thermal resistance LED encapsulating structure, and it comprises the following steps:
Step 1: get a circuit board, a through hole is arranged on this circuit board;
Step 2: the back side of circuit board is sticked on resistant to elevated temperatures cohesive material;
Step 3: LED chip is fixed in the through hole of circuit board;
Step 4: LED chip and circuit board are electrically connected with metal lead wire;
Step 5: with adhesive layer, LED chip is enclosed in the through hole of circuit board admittedly, and solidifies;
Step 6; Circuit board after solidifying is taken out, remove the cohesive material of back of circuit board, the bottom surface of exposing LED chip;
Step 7: adopt evaporation, sputter or electric plating method, make reflector and metal guide thermosphere at the back side of circuit board, this circuit board, reflector and metal guide thermosphere form the support circuit plate, complete the preparation of LED encapsulating structure.
The invention has the beneficial effects as follows, the LED encapsulating structure of the low thermal resistance that obtains by this method for packing, its advantage is without support, and this LED encapsulating structure can improve the light extraction efficiency of LED chip, and the heat that LED chip produces is spread rapidly through the metal guide thermosphere, and be transmitted to spreader surface, save the intermediate link of conventional package structure, thermal resistance obviously descends, and brightness and reliability are improved, the integral manufacturing cost descends, and has improved homogeneity of product.
Description of drawings
In order to make purpose of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the present invention is further elaborated, wherein:
Fig. 1 is the structural representation of LED method for packing one embodiment of the present invention;
Fig. 2 is the structural representation of another embodiment of LED method for packing of the present invention;
Fig. 3 is method flow diagram of the present invention;
Embodiment
See also Figure 1 and Figure 2, the invention provides a kind of low thermal resistance LED encapsulating structure, it comprises:
One support circuit plate 2 comprises: a circuit board 21; One is produced on reflector 22 and under circuit board 21 is produced on metal guide thermosphere 23 under reflector 22, there is a through hole 24 centre of this circuit board 21, described LED chip 1 is positioned at the through hole 24 of circuit board 21, this LED chip 1 is electrically connected by metal lead wire 3 and circuit board 21, this metal lead wire 3 is generally gold thread or aluminum steel, diameter is the 10-70 micron, plays the effect that conduction connects; The section of the through hole 24 in the middle of this circuit board 21 is V shaped hole, stepped hole or U-shaped hole, and different sections can obtain the effect of not sharing the same light and extracting; This through hole 24 be shaped as circular hole, square hole or irregular hole, the shape of different through holes can obtain different optical field distribution; The inwall of this through hole 24 is coated with metal level or the blooming of high reflectance, and the material of this metal level or blooming can be silver, aluminium, or the material of other high reflectances, thickness be tens dusts to the hundreds of micron, play reduce through hole 24 inwall to Optical Absorption, improve light extraction efficiency; The material of this circuit board 21 is pcb board, aluminium base or ceramic substrate, and circuit layer has been done on the surface, plays fixed L ED chip 1, supports whole encapsulating structure, realizes the effect that between whole encapsulating structure and external circuit, circuit is connected; The material in this reflector 22 is optical reflectance coating, can be silver or aluminium, the thickness in reflector 22 be tens dusts to the hundreds of micron, play the light reflection that incides whole encapsulating structure bottom surface gone out, reduce whole encapsulating structure bottom surface to Optical Absorption, improve the effect of light extraction efficiency; The material that is produced on the metal guide thermosphere 23 under reflector 22 is the material of high thermal conductivity, can be copper or aluminium, the thickness of metal guide thermosphere 23 is tens microns to several thousand microns, playing the heat of sending when LED is lighted spreads rapidly through the metal guide thermosphere, and be transmitted to the effect that spreader surface sheds fast, and reduce the junction temperature of LED, reduce the thermal resistance of whole encapsulating structure, improve the luminous efficiency of LED, improve the reliability of LED.
One adhesive layer 4, this adhesive layer 4 will be electrically connected good LED chip 1 and admittedly be enclosed in the through hole 24 of the circuit board 21 in support circuit plate 2, and the material of this adhesive layer 4 is silica gel or resin, is mixed with fluorescent material in this adhesive layer 4; Fluorescent material can be yellow fluorescent powder, red fluorescence powder, any fluorescent material that can be excited by LED chip 1 such as green emitting phosphor, particle diameter is several nanometers to tens micron, fluorescent material and silica gel or resin mix in required ratio, and the light that LED chip 1 sends is excited the light that sends to mix with fluorescent material by LED chip 1 and forms the light that whole LED encapsulating structure obtains at last.
See also shown in Figure 3ly, the invention provides a kind of method for packing of low thermal resistance LED encapsulating structure, it comprises the following steps:
Step 1: get a circuit board 21, a through hole 24 is arranged on this circuit board 21, the section of the through hole 24 in the middle of this circuit board 21 is V shaped hole, stepped hole or U-shaped hole, and different sections can obtain the effect of not sharing the same light and extracting; This through hole 24 be shaped as circular hole, square hole or irregular hole, different shape of through holes can obtain different optical field distribution; The inwall of this through hole 24 is coated with metal level or the blooming of high reflectance, and the material of this metal level or blooming can be silver, aluminium, or the material of other high reflectances, thickness be tens dusts to the hundreds of micron, play reduce through hole 24 inwall to Optical Absorption, improve light extraction efficiency; The material of this circuit board 21 is pcb board, aluminium base or ceramic substrate, and circuit layer has been done on the surface, plays fixed L ED chip 1, supports whole encapsulating structure, realizes the effect that between whole encapsulating structure and external circuit, circuit is connected;
Step 2: the back side of circuit board 21 is sticked on resistant to elevated temperatures cohesive material, and this cohesive material plays the effect of temporary transient fixed L ED chip 1;
step 3: LED chip 1 is fixed in the through hole 24 of circuit board 21, the quantity of this LED chip 1 is more than or equal to 1, in Fig. 1, the quantity of LED chip 1 is one, in Fig. 2, the quantity of LED chip 1 is a plurality of, this LED chip 1 is the solid semiconductor chip, its luminescent material is ruddiness, blue light, the luminescent material of green glow or ultraviolet light, LED chip 1 can be high-power chip, middle power chip, perhaps small-power chip, described LED chip 1 is the LED chip of single wavelength or multi-wavelength, LED chip 1 can be 1 LEDs chip, can be also that between many single wavelength LED chips, connection in series-parallel forms, can be also that between many multi-wavelength LED chips, connection in series-parallel forms, when being a plurality of, be serial or parallel connection (consulting Fig. 2) when the quantity of this LED chip 1 between this LED chip 1,
Step 4: with metal lead wire 3, LED chip 1 and circuit board 21 are electrically connected, this metal lead wire 3 is generally gold thread or aluminum steel, and diameter is the 10-70 micron, plays the effect that conduction connects;
Step 5: LED chip 1 is enclosed in admittedly in the through hole 24 of circuit board 21 with adhesive layer 4, and solidify, the material of this adhesive layer 4 is silica gel or resin, be mixed with fluorescent material in this adhesive layer 4, fluorescent material can be yellow fluorescent powder, red fluorescence powder, any fluorescent material that can be excited by LED chip 1 such as green emitting phosphor, particle diameter is several nanometers to tens micron, fluorescent material and silica gel or resin mix in required ratio, and the light that LED chip 1 sends is excited the light that sends to mix with fluorescent material by LED chip 1 and forms the light that whole LED encapsulating structure obtains at last;
Step 6: the circuit board 21 that will admittedly be honored as a queen is put into the baking oven baking, and sealing is solidified, and general baking temperature is 80150 ℃;
Step 7: adopt evaporation, sputter or electric plating method, the back side at circuit board 21 makes reflector 22 and metal guide thermosphere 23, the material in this reflector 22 is optical reflectance coating, can be silver or aluminium, the thickness in reflector 22 is that tens dusts are to the hundreds of micron, play the light reflection that will incide whole encapsulating structure bottom surface and go out, reduce whole encapsulating structure bottom surface to Optical Absorption, improve the effect of light extraction efficiency; The material that is produced on the metal guide thermosphere 23 under reflector 22 is the material of high thermal conductivity, can be copper or aluminium, the thickness of metal guide thermosphere 23 is tens microns to several thousand microns, playing the heat of sending when LED is lighted spreads rapidly through the metal guide thermosphere, and be transmitted to the effect that spreader surface sheds fast, and reduce the junction temperature of LED, reduce the thermal resistance of whole encapsulating structure, improve the luminous efficiency of LED, improve the reliability of LED; This circuit board 21, reflector 22 and metal guide thermosphere 23 form support circuit plate 2, complete the preparation of LED encapsulating structure.
The above; only embodiments of the invention; be not that the present invention is done any pro forma restriction; every any simple modification, equivalent variations and modification of above embodiment being done according to the technology of the present invention essence; within all still belonging to the technical solution of the present invention scope, so protection scope of the present invention is when being as the criterion with claims.
Claims (12)
1. low thermal resistance LED encapsulating structure, it comprises:
LED chip;
One support circuit plate comprises: a circuit board; One is produced on reflector and under circuit board is produced on metal guide thermosphere under the reflector, and there is a through hole centre of this circuit board, and described LED chip is positioned at the through hole of circuit board, and this LED chip is electrically connected by metal lead wire and circuit board;
One adhesive layer, this adhesive layer will be electrically connected good LED chip and admittedly be enclosed in the through hole of the circuit board in the support circuit plate.
2. low thermal resistance LED encapsulating structure as claimed in claim 1 wherein is fixed on the quantity of the LED chip in circuit board through-hole more than or equal to 1, and the section of the through hole in the middle of this circuit board is V shaped hole, stepped hole or U-shaped hole; This through hole be shaped as circular hole, square hole or irregular hole; The inwall of this through hole is coated with metal level or the blooming of high reflectance.
3. low thermal resistance LED encapsulating structure as claimed in claim 2, wherein LED chip is the solid semiconductor chip, its luminescent material is the luminescent material of ruddiness, blue light, green glow or ultraviolet light, and described LED chip is the LED chip of single wavelength or multi-wavelength, and this LED chip is serial or parallel connection.
4. low thermal resistance LED encapsulating structure as claimed in claim 1, wherein the material of this circuit board is pcb board, aluminium base or ceramic substrate.
5. low thermal resistance LED encapsulating structure as claimed in claim 1, wherein the material of this adhesive layer is silica gel or resin, is mixed with fluorescent material in this adhesive layer.
6. low thermal resistance LED encapsulating structure as claimed in claim 1, wherein the material in reflector is optical reflectance coating, the thickness in reflector is that tens dusts are to the hundreds of micron; The material of this metal guide thermosphere is copper or aluminium, and the thickness of metal guide thermosphere is tens microns to several thousand microns.
7. the method for packing of a low thermal resistance LED encapsulating structure, it comprises the following steps:
Step 1: get a circuit board, a through hole is arranged on this circuit board;
Step 2: the back side of circuit board is sticked on resistant to elevated temperatures cohesive material;
Step 3: LED chip is fixed in the through hole of circuit board;
Step 4: LED chip and circuit board are electrically connected with metal lead wire;
Step 5: with adhesive layer, LED chip is enclosed in the through hole of circuit board admittedly, and solidifies;
Step 6; Circuit board after solidifying is taken out, remove the cohesive material of back of circuit board, the bottom surface of exposing LED chip;
Step 7: adopt evaporation, sputter or electric plating method, make reflector and metal guide thermosphere at the back side of circuit board, this circuit board, reflector and metal guide thermosphere form the support circuit plate, complete the preparation of LED encapsulating structure.
8. the method for packing of low thermal resistance LED encapsulating structure as claimed in claim 7 wherein is fixed on the quantity of the LED chip in circuit board through-hole more than or equal to 1, and the section of the through hole in the middle of this circuit board is V shaped hole, stepped hole or U-shaped hole; This through hole be shaped as circular hole, square hole or irregular hole; The inwall of this through hole is coated with metal level or the blooming of high reflectance.
9. the method for packing of low thermal resistance LED encapsulating structure as claimed in claim 8, wherein LED chip is the solid semiconductor chip, its luminescent material is the luminescent material of ruddiness, blue light, green glow or ultraviolet light, described LED chip is the LED chip of single wavelength or multi-wavelength, and this LED chip is serial or parallel connection.
10. the method for packing of low thermal resistance LED encapsulating structure as claimed in claim 7, wherein the material of this circuit board is pcb board, aluminium base or ceramic substrate.
11. the method for packing of low thermal resistance LED encapsulating structure as claimed in claim 7, wherein the material of this adhesive layer is silica gel or resin, is mixed with fluorescent material in this adhesive layer.
12. the method for packing of low thermal resistance LED encapsulating structure as claimed in claim 7, wherein the material in reflector is optical reflectance coating, and the thickness in reflector is that tens dusts are to the hundreds of micron; The material of this metal guide thermosphere is copper or aluminium, and the thickness of metal guide thermosphere is tens microns to several thousand microns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310067793.4A CN103151445B (en) | 2013-03-04 | 2013-03-04 | Low thermal resistance LED (Light Emitting Diode) packaging structure and packaging method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310067793.4A CN103151445B (en) | 2013-03-04 | 2013-03-04 | Low thermal resistance LED (Light Emitting Diode) packaging structure and packaging method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103151445A true CN103151445A (en) | 2013-06-12 |
| CN103151445B CN103151445B (en) | 2017-02-08 |
Family
ID=48549404
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310067793.4A Active CN103151445B (en) | 2013-03-04 | 2013-03-04 | Low thermal resistance LED (Light Emitting Diode) packaging structure and packaging method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103151445B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104576900A (en) * | 2015-01-07 | 2015-04-29 | 中国科学院半导体研究所 | Packaging method of LED chip |
| CN106898684A (en) * | 2017-04-14 | 2017-06-27 | 桂林电子科技大学 | A kind of multi-chip and UVLED array supports of connecting |
| CN108591974A (en) * | 2018-04-24 | 2018-09-28 | 武汉华星光电技术有限公司 | Drive substrate, preparation method and Minitype LED array emitting backlight module |
| CN109856860A (en) * | 2019-03-29 | 2019-06-07 | 深圳创维－Rgb电子有限公司 | A kind of liquid crystal display die set and display device |
| CN110854255A (en) * | 2019-11-21 | 2020-02-28 | 常州市五一佳丽汽车部件有限公司 | Preparation method of LED patch of car light surface light source |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2720646Y (en) * | 2004-07-29 | 2005-08-24 | 亿光电子工业股份有限公司 | High-power light emitting diode package structure |
| JP2009111273A (en) * | 2007-10-31 | 2009-05-21 | Toshiba Lighting & Technology Corp | Light-emitting device |
| CN202195315U (en) * | 2011-08-23 | 2012-04-18 | 佛山市国星光电股份有限公司 | LED (light-emitting diode) surface light source device |
| CN102738351A (en) * | 2011-04-02 | 2012-10-17 | 展晶科技(深圳)有限公司 | Light emitting diode (LED) packaging structure and manufacturing method thereof |
| US20130032842A1 (en) * | 2011-08-01 | 2013-02-07 | Park Jong Kil | Light emitting device package and method of manufacturing the same |
-
2013
- 2013-03-04 CN CN201310067793.4A patent/CN103151445B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2720646Y (en) * | 2004-07-29 | 2005-08-24 | 亿光电子工业股份有限公司 | High-power light emitting diode package structure |
| JP2009111273A (en) * | 2007-10-31 | 2009-05-21 | Toshiba Lighting & Technology Corp | Light-emitting device |
| CN102738351A (en) * | 2011-04-02 | 2012-10-17 | 展晶科技(深圳)有限公司 | Light emitting diode (LED) packaging structure and manufacturing method thereof |
| US20130032842A1 (en) * | 2011-08-01 | 2013-02-07 | Park Jong Kil | Light emitting device package and method of manufacturing the same |
| CN202195315U (en) * | 2011-08-23 | 2012-04-18 | 佛山市国星光电股份有限公司 | LED (light-emitting diode) surface light source device |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104576900A (en) * | 2015-01-07 | 2015-04-29 | 中国科学院半导体研究所 | Packaging method of LED chip |
| CN106898684A (en) * | 2017-04-14 | 2017-06-27 | 桂林电子科技大学 | A kind of multi-chip and UVLED array supports of connecting |
| CN108591974A (en) * | 2018-04-24 | 2018-09-28 | 武汉华星光电技术有限公司 | Drive substrate, preparation method and Minitype LED array emitting backlight module |
| CN109856860A (en) * | 2019-03-29 | 2019-06-07 | 深圳创维－Rgb电子有限公司 | A kind of liquid crystal display die set and display device |
| CN109856860B (en) * | 2019-03-29 | 2022-04-19 | 深圳创维－Rgb电子有限公司 | Liquid crystal display module and display device |
| CN110854255A (en) * | 2019-11-21 | 2020-02-28 | 常州市五一佳丽汽车部件有限公司 | Preparation method of LED patch of car light surface light source |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103151445B (en) | 2017-02-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100483762C (en) | LED device making method | |
| TW201133953A (en) | Saturated yellow phosphor converted LED and blue converted red LED | |
| CN101551067B (en) | White light LED light source module adopting COB technology and array interconnecting | |
| CN103151445A (en) | Low thermal resistance LED (Light Emitting Diode) packaging structure and packaging method | |
| CN106783821A (en) | The full-spectrum LED encapsulating structure and its method for packing of a kind of unstressed configuration powder | |
| CN201373272Y (en) | White-light LED light source module adopting COB technology and array interconnection | |
| CN202013881U (en) | Integrated packaging structure with vertically structured LED chips | |
| CN201513856U (en) | High-power LED lamp based on heat-conducting nanoparticle | |
| CN103151446A (en) | Frameless light-emitting diode (LED) packaging structure and packaging method | |
| CN206401317U (en) | A kind of full-spectrum LED encapsulating structure of unstressed configuration powder | |
| CN103322438A (en) | High-power LED projection lamp and manufacturing method thereof | |
| CN103375704B (en) | High power LED lamp and its manufacture method | |
| CN203023841U (en) | Four-pi light emission light-emitting diode (LED) luminous tube with chips inversely installed in transparent ceramic tube and illuminating lamp | |
| CN201936915U (en) | LED (light-emitting diode) encapsulating structure and LED module thereof | |
| CN103579210B (en) | The connection of light emitting diode and heat-radiating substrate | |
| CN208422957U (en) | A kind of integrated LED multi-chip three-dimension packaging light source | |
| CN203323067U (en) | High-power LED heat dissipation structure | |
| CN102214652A (en) | LED (light emitting diode) packaging structure and preparation method thereof | |
| CN102226995B (en) | LED (light-emitting diode) packaging structure and manufacturing method thereof | |
| CN202549839U (en) | Novel LED (Light-Emitting Diode) light-emitting chip and LED lamp formed by assembling same | |
| Chan | Electronic packaging for solid-state lighting | |
| CN207651514U (en) | The integral type infrared LED encapsulating structure of anti-external source interference | |
| CN201757295U (en) | LED lamp structure | |
| CN204885156U (en) | LED light source module | |
| CN102569284A (en) | Novel light-emitting diode (LED) light-emitting chip and LED lamp formed by assembling LED light-emitting chips |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |