CN102637810A - LED (light-emitting diode) packaging structure and packaging molding method - Google Patents
LED (light-emitting diode) packaging structure and packaging molding method Download PDFInfo
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- CN102637810A CN102637810A CN2012101236239A CN201210123623A CN102637810A CN 102637810 A CN102637810 A CN 102637810A CN 2012101236239 A CN2012101236239 A CN 2012101236239A CN 201210123623 A CN201210123623 A CN 201210123623A CN 102637810 A CN102637810 A CN 102637810A
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Abstract
The invention provides an LED (light-emitting diode) packaging structure and a packaging molding method. The LED packaging structure comprises an LED support, an LED chip, two metal wires and a multilayer silica gel layer, wherein the LED chip is fixed on the surface of the LED support, and the two metal wires are used for connecting the LED support with the LED chip; and the multilayer silica gel layer covers the LED support, the LED chip and the two metal wires. The packaging structure obtained by adopting the LED packaging method provided by the invention can effectively improve LED facula and light type, so that the LED sends out light uniformly, the light power loss is reduced, the external quantum efficiency and the LED reliability are improved, and light failure is reduced.
Description
Technical field
The invention belongs to technical field of semiconductors, be meant a kind of light-emitting diode (LED) encapsulating structure and method for packing especially.
Background technology
LED (light emitting diode); It is light-emitting diode; As new and effective solid light source, have remarkable advantages such as long-life, energy-conservation, environmental protection, be leaping again continue incandescent lamp, fluorescent lamp after on the human illumination history; Be considered to the illumination new technology in the 3rd generation, its economy and social effect are huge.The LED encapsulation is that outer lead is connected on the electrode of led chip, so that be connected with other device.LED packaging protection chip does not receive water, and the erosion of materials such as air can also improve the light extraction efficiency of led chip.
Realize a coating processes that key technology is exactly a fluorescent material of white light LEDs, the controllable thickness property of fluorescent coating and uniformity directly influence emitting brightness, the colourity consistency of LED, even the white light light extraction efficiency.Traditional dosing technology is mainly still adopted in the coating of fluorescent material at present; Directly in chip surface spot printing phosphor gel; Be about to phosphor powder and mix according to a certain ratio, stir, with fine needle head kind tool it is coated on chip surface then with colloid (like silica gel or epoxy resin etc.).There are tangible fault of construction in this method and coating, except that the center to edge structural non-homogeneous, in practical operation, no matter manually or machine operation, between same batch the LED pipe, phosphor powder layer is in the inhomogeneities hot spot appearance yellow partially or indigo plant partially of shape portion.Overcome above-mentioned defective; Improve the uniformity consistency of colourity, brightness between hot spot spatial distribution uniformity and the white light LEDs pipe of power white light LEDs; Just must change the shape and the technology of existing fluorescent coating, make phosphor powder layer thickness homogenizing, so just can obtain the outgoing white light of uniformity.In addition, led chip produces a large amount of heat when lighting, and uses traditional dosing technology, and fluorescent material directly contacts with chip surface, influences the reliability of fluorescent material, thereby influences the reliability of whole LED encapsulation.
In addition, the refraction coefficient of led chip material is usually more than 2.0, and the refraction coefficient of air dielectric is 1; If have only one deck silica gel or epoxy resin transition between them; Cause the encapsulating material refraction coefficient single,, make greatly light can not reflect lens but in the reflected back lens because the angle of total reflection of LED lens is little; Produce very big optical power loss, reduced external quantum efficiency.
Summary of the invention
The objective of the invention is to; Encapsulating structure and the encapsulated moulding method of a kind of LED are provided,, can effectively improve hot spot and the light type of LED through the encapsulating structure that this LED method for packing obtains; Make the LED bright dipping even; Reduce optical power loss, improve external quantum efficiency and LED reliability, reduce light decay.
The present invention provides a kind of LED encapsulating structure, and it comprises:
One led support;
One led chip is fixed in the surface of led support;
Two metal line are used for being connected of led support and led chip;
The multilayer silica gel layer is covered on led support, led chip and two metal line.
The present invention also provides a kind of LED encapsulating structure forming method, and it may further comprise the steps:
Step 1: led chip and led support are electrically connected;
Step 2: led chip that connects and led support are snapped in the injecting glue plate, be inverted in first mould, in mould, fill with silica gel through the hole for injecting glue on the injecting glue plate, the baking demoulding forms first silica gel layer;
Step 3: repeating step 2, on first silica gel layer, prepare silica gel layer, form the multilayer silica gel layer, accomplish LED encapsulated moulding method.
The invention has the beneficial effects as follows, in said LED encapsulating structure, at first adopt silica gel as package material; Have better heat dispersion than epoxy resin, the heat that makes LED light the back generation can efficiently shed, and improves heat dispersion greatly; Improve reliability, reduce light decay.This method fluorescent material applies evenly, and away from chip surface, outwards realizes refractive index multilayer silica gel structure from high to low from phosphor powder layer; Improve hot spot and the light type of LED, make the LED bright dipping even, reduce optical power loss; Improve external quantum efficiency and LED reliability, reduce light decay.This encapsulating structure especially is fit to the encapsulation of high-power LED chip.
Description of drawings
In order to make the object of the invention, technical scheme and advantage clearer, below in conjunction with accompanying drawing and embodiment, the present invention is further elaborated, wherein:
Fig. 1 is the structural representation of LED method for packing one embodiment of the present invention;
Fig. 2 is a method flow diagram of the present invention;
Fig. 3, Fig. 4 are the structural representations that the present invention prepares multilayer silica gel layer 60.
Embodiment
See also Fig. 1, the present invention provides a kind of LED encapsulating structure, and it comprises: led support 1; Led chip 2; Two metal line 3 are used for being connected of led support 1 and led chip 2; Multilayer silica gel layer 60 is covered on led support 1, led chip 2 and two metal line 3.
Led chip 2 is fixed in the surface of led support 1; Led chip 2 can be the solid semiconductor chip, and its luminescent material can be blue light GaN or GaInN material, also can be to send ruddiness, green glow, other luminescent materials of ultraviolet light.
Two metal line 3 are used for being connected of led support 1 and led chip 2; Metal wire 3 is generally gold thread or aluminum steel, and diameter is the 10-70 micron, plays the effect that conduction connects.
Multilayer silica gel layer 60 is covered on led support 1, led chip 2 and two metal line 3, and the number of plies of this multilayer silica gel layer 60 is the 3-6 layer.As shown in Figure 1, when the number of plies of described multilayer silica gel layer 60 was 5 layers, this multilayer silica gel layer 60 comprised first silica gel layer 61 and on it second silica gel layer 62 of capping, the 3rd silica gel layer 63, the 4th silica gel layer 64 and the 5th silica gel layer 65 successively.Form first silica gel layer 61 and can be the silica gel of arbitrary refractive index; Shape can be set as hemisphere; Square grade is to light extraction and the useful shape of optical field distribution, and thickness can be tens microns and arrive the hundreds of millimeter, cover on the led chip 2; Play protection led chip 2 and two wires 3, support the effect of isolating second silica gel layer 62.
Second silica gel layer 62 covers on first silica gel layer 61, can be the silica gel of arbitrary refractive index, and shape can be identical or different with first silica gel layer 61; Thickness can be tens microns and arrive the hundreds of millimeter; Be mixed with fluorescent material in second silica gel layer 62, fluorescent material can be yellow fluorescent powder, red fluorescence powder; Green emitting phosphors etc. are any can be by led chip 2 excited fluorescent powder; Particle diameter is several nanometers to tens micron, and fluorescent material and silica gel are even by required mixed, and the light that led chip 2 sends is excited the light that sends to mix the formation whole LED with fluorescent material by led chip 2 and encapsulates the light that obtains at last.Because the shape controllable thickness of second silica gel layer 62 through regulating the concentration that is mixed with fluorescent material in second silica gel layer 62, can realize uniform colour temperature and optical field distribution, improve the uniformity consistency of colourity, brightness between hot spot spatial distribution uniformity and the LED pipe of LED.In addition, owing to the fluorescent material that is mixed with in second silica gel layer 62 does not directly contact with led chip 2, the heat that led chip 2 produces when lighting, less to the reliability effect of fluorescent material, thus improve the reliability of whole LED encapsulation.
The 3rd silica gel layer 63, the 4th silica gel layer 64 and the 5th silica gel layer 65 are the silica gel of high index of refraction, and they are identical or different with the shape of first silica gel layer 61 and second silica gel layer 62, thickness can be tens microns to the hundreds of millimeter.The 3rd silica gel layer 63, the 4th silica gel layer 64 and the 5th silica gel layer 65 are successively on capping and first silica gel layer 61 and second silica gel layer 62; Refractive index reduces from inside to outside gradually; The OE series silica gel that can adopt Dow Corning Corporation to produce, their refraction coefficient is respectively: 1.53,1.50,1.43.Refractive index reduces from inside to outside gradually, can improve light extraction efficiency, thereby improves external quantum efficiency.
See also Fig. 2, Fig. 3 and Fig. 4, the present invention also provides the encapsulated moulding method of the encapsulating structure of said LED on the basis of the foregoing description, and it may further comprise the steps:
Step 1: led chip 2 is fixed on the led support 1, and led chip 2 is realized being electrically connected through two metal line 3 and led support 1.
Step 2: as shown in Figure 3; The led support 1 that completion led chip 2 is electrically connected inserts in the injecting glue plate 7, and its inversion is placed on the first injecting glue mould 51, in the first injecting glue mould 51, fills with silica gel through the hole for injecting glue in the injecting glue plate 74; Integral body is put into the baking oven baking then; After treating that silica gel solidifies, take off the first injecting glue mould 51, form first silica gel layer 61.
Step 3: repeating step 2, on first silica gel layer 61, prepare silica gel layer, form multilayer silica gel layer 60, accomplish LED encapsulated moulding method.The number of plies of this multilayer silica gel layer 60 is the 3-6 layer; When the number of plies of described multilayer silica gel layer 60 was 5 layers, this multilayer silica gel layer 60 comprised first silica gel layer 61 and on it second silica gel layer 62 of capping, the 3rd silica gel layer 63, the 4th silica gel layer 64 and the 5th silica gel layer 65 successively.The 3rd silica gel layer 63, the 4th silica gel layer 64 and the 5th silica gel layer 65 are the silica gel of high index of refraction, and refractive index reduces from inside to outside gradually, and be shown in Figure 4 for utilizing the 5th injecting glue mould 55 formation the 5th silica gel layer 65.
Remove injecting glue plate 7 at last, obtain the evenly LED encapsulating structure of the multilayer silica gel gradually changed refractive index of coating of fluorescent material.
The above is merely preferred embodiment of the present invention, not in order to restriction the present invention, all any modifications of within spirit of the present invention and principle, being made, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (9)
1. LED encapsulating structure, it comprises:
One led support;
One led chip is fixed in the surface of led support;
Two metal line are used for being connected of led support and led chip;
The multilayer silica gel layer is covered on led support, led chip and two metal line.
2. LED encapsulating structure as claimed in claim 1, wherein the number of plies of multilayer silica gel layer is the 3-6 layer.
3. LED encapsulating structure as claimed in claim 1, when wherein the number of plies of multilayer silica gel layer 60 was 5 layers, this multilayer silica gel layer comprised first silica gel layer and capping second silica gel layer 62, the 3rd silica gel layer, the 4th silica gel layer and the 5th silica gel layer on it successively.
4. LED encapsulating structure as claimed in claim 3 wherein is mixed with fluorescent material in second silica gel layer.
5. LED encapsulating structure as claimed in claim 3, wherein the 3rd silica gel layer, the 4th silica gel layer and the 5th silica gel layer are the silica gel of high index of refraction, its refractive index reduces from inside to outside gradually.
6. LED encapsulating structure forming method, it may further comprise the steps:
Step 1: led chip and led support are electrically connected;
Step 2: led chip that connects and led support are snapped in the injecting glue plate, be inverted in first mould, in mould, fill with silica gel through the hole for injecting glue on the injecting glue plate, the baking demoulding forms first silica gel layer;
Step 3: repeating step 2, on first silica gel layer, prepare silica gel layer, form the multilayer silica gel layer, accomplish LED encapsulated moulding method.
7. LED encapsulating structure forming method as claimed in claim 6, wherein the number of plies of multilayer silica gel layer is the 3-6 layer.
8. LED encapsulating structure forming method as claimed in claim 6, when wherein the number of plies of multilayer silica gel layer was 5 layers, this multilayer silica gel layer comprised first silica gel layer and capping second silica gel layer, the 3rd silica gel layer, the 4th silica gel layer and the 5th silica gel layer on it successively.
9. LED encapsulating structure forming method as claimed in claim 8, wherein the 3rd silica gel layer, the 4th silica gel layer and the 5th silica gel layer are the silica gel of high index of refraction, its refractive index reduces from inside to outside gradually.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012101236239A CN102637810A (en) | 2012-04-25 | 2012-04-25 | LED (light-emitting diode) packaging structure and packaging molding method |
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| CN2012101236239A CN102637810A (en) | 2012-04-25 | 2012-04-25 | LED (light-emitting diode) packaging structure and packaging molding method |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103000791A (en) * | 2012-12-24 | 2013-03-27 | 佛山市香港科技大学Led-Fpd工程技术研究开发中心 | Light-emitting diode (LED) packaging structure of dispensing coating long-distance type fluorescent powder and manufacture method |
| CN103219452A (en) * | 2013-04-02 | 2013-07-24 | 佛山市金帮光电科技有限公司 | Packaging method for realizing high light emitting efficiency of LED by three-layer organic silicon material |
| CN103943756A (en) * | 2014-04-15 | 2014-07-23 | 深圳市晶台股份有限公司 | LED module COB packaging technology and structure |
| CN107658376A (en) * | 2017-09-11 | 2018-02-02 | 聚灿光电科技（宿迁）有限公司 | A kind of adopting surface mounted LED encapsulates particle |
| CN108006491A (en) * | 2017-11-28 | 2018-05-08 | 西安科锐盛创新科技有限公司 | Led tunnel lamp |
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| JP2005183727A (en) * | 2003-12-19 | 2005-07-07 | Kyocera Corp | Light emitting apparatus |
| CN101022145A (en) * | 2006-02-15 | 2007-08-22 | 深圳市量子光电子有限公司 | Light-emitted diode |
| CN101030610A (en) * | 2006-03-05 | 2007-09-05 | 浙江古越龙山电子科技发展有限公司 | Large-power light-emitting diodes and its fluorescent-powder coating method |
| CN100585894C (en) * | 2008-04-29 | 2010-01-27 | 深圳市量子光电子有限公司 | LED encapsulating structure and forming method thereof |
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2012
- 2012-04-25 CN CN2012101236239A patent/CN102637810A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2005183727A (en) * | 2003-12-19 | 2005-07-07 | Kyocera Corp | Light emitting apparatus |
| CN101022145A (en) * | 2006-02-15 | 2007-08-22 | 深圳市量子光电子有限公司 | Light-emitted diode |
| CN101030610A (en) * | 2006-03-05 | 2007-09-05 | 浙江古越龙山电子科技发展有限公司 | Large-power light-emitting diodes and its fluorescent-powder coating method |
| CN100585894C (en) * | 2008-04-29 | 2010-01-27 | 深圳市量子光电子有限公司 | LED encapsulating structure and forming method thereof |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103000791A (en) * | 2012-12-24 | 2013-03-27 | 佛山市香港科技大学Led-Fpd工程技术研究开发中心 | Light-emitting diode (LED) packaging structure of dispensing coating long-distance type fluorescent powder and manufacture method |
| CN103000791B (en) * | 2012-12-24 | 2015-06-24 | 佛山市香港科技大学Led-Fpd工程技术研究开发中心 | Light-emitting diode (LED) packaging structure of dispensing coating long-distance type fluorescent powder and manufacture method |
| CN103219452A (en) * | 2013-04-02 | 2013-07-24 | 佛山市金帮光电科技有限公司 | Packaging method for realizing high light emitting efficiency of LED by three-layer organic silicon material |
| CN103219452B (en) * | 2013-04-02 | 2015-11-11 | 佛山市金帮光电科技有限公司 | Three layers of organosilicon material are utilized to realize the method for packing of LED high light-emitting rate |
| CN103943756A (en) * | 2014-04-15 | 2014-07-23 | 深圳市晶台股份有限公司 | LED module COB packaging technology and structure |
| CN107658376A (en) * | 2017-09-11 | 2018-02-02 | 聚灿光电科技（宿迁）有限公司 | A kind of adopting surface mounted LED encapsulates particle |
| CN108006491A (en) * | 2017-11-28 | 2018-05-08 | 西安科锐盛创新科技有限公司 | Led tunnel lamp |
| CN108006491B (en) * | 2017-11-28 | 2020-10-30 | 吉安建伟纸塑制品包装有限公司 | LED tunnel lamp |
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Application publication date: 20120815 |