CN103219452A - Packaging method for realizing high light emitting efficiency of LED by three-layer organic silicon material - Google Patents

Packaging method for realizing high light emitting efficiency of LED by three-layer organic silicon material Download PDF

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Publication number
CN103219452A
CN103219452A CN2013101135919A CN201310113591A CN103219452A CN 103219452 A CN103219452 A CN 103219452A CN 2013101135919 A CN2013101135919 A CN 2013101135919A CN 201310113591 A CN201310113591 A CN 201310113591A CN 103219452 A CN103219452 A CN 103219452A
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layer
led
silica gel
organosilicon
fluorescent material
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CN103219452B (en
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钟国华
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FOSHAN NANHAI DISTRICT ZHENGDONG LIGHTING CO., LTD.
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FOSHAN JINBANG PHOTOELECTRICITY TECHNOLOGY Co Ltd
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Abstract

The invention discloses a packaging method for realizing high light emitting efficiency of an LED by a three-layer organic silicon material. The LED is packaged by three layers from inside to outside. The first layer is formed by uniformly mixing 6-7 micron fluorescent powder and Dow Corning OE-6550 silica gel according to mole concentration of 0.109-0.123mol/L, wherein the thickness of the layer is 0.4-0.6mm, and roasting at 100-160 DEG C for 20-60 minutes to cure. The second layer is formed by uniformly mixing 6-7 micron fluorescent powder and ShinEtsu KER-2500 silica gel according to mole concentration of 0.0034-0.0037mol/L, wherein the thickness of the layer is 0.2-0.4mm, and roasting at 100-160 DEG C for 20-60 minutes to cure. The third layer is formed by uniformly mixing ShinEtsu KER-2500 silica gel, wherein the thickness of the layer is 0.5-1.5mm, first, roasting for 20-60 minutes at 100-160 DEG C and then roasting at 140-160 DEG C for 4-6 hours to cure. Three-layer silica gel is used for LED packaging. The refractive indexes of the packaging materials are changed in gradient from inside to outside, so that total reflection phenomenon caused by large different of refractive indexes for conventional single-layer packaging is reduced, the luminous flux is improved, and the light emitting angel is enlarged.

Description

Utilize three layers of organosilicon material to realize the method for packing of LED high light-emitting rate
Technical field
The present invention relates to LED encapsulation technology field.
Background technology
LED illumination is the green illumination with advantages such as energy-conservation, long-life, non-maintaining, easy to control, environmental protection, and as the green light source of a new generation, high light efficiency is the characteristic of great power LED indispensability.At present, the method for the light efficiency of raising LED mainly contains: the quantum efficiency and the extraction rate that improves light in the LED device that improve LED.Wherein suitable encapsulating material and encapsulating structure are adopted in the front end light transmission part of LED, can enlarge the pyramid that overflows of light among the LED, thereby significantly improve the extraction rate of light among the LED, reach the purpose that improves light efficiency.Therefore, how adopting suitable encapsulating material and encapsulating structure to realize the luminous optics control for LED, is one of important directions of present LED encapsulation field research.
In traditional LED packaged type, adopt individual layer silica gel or the epoxy resin of refractive index between led chip refractive index and air refraction to encapsulate, but because led chip has higher refractive index (being about 2.2), and the refractive index of epoxy matrix very low (being about 1.5), incidence angle is greater than the wide-angle incident ray generation total reflection of the cirtical angle of total reflection, be unfavorable for the output of light, light extraction efficiency is low.Therefore, be necessary to research and develop a kind of new packaged type, can effectively reduce total reflection phenomenon at the interface, thereby improve the light emission rate of LED at led chip and encapsulating material.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of method for packing that can effectively improve the LED light emission rate.
The technical scheme that adopts for solving the problems of the technologies described above: a kind of method for packing that utilizes three layers of organosilicon material to realize the LED high light-emitting rate, three layers of encapsulation are adopted in the encapsulation of LED from inside to outside,
Ground floor: it is 6-7um that fluorescent material is selected particle diameter for use, organosilicon selects for use DOW CORNING OE-6550 that silica gel is arranged, is that 0.109-0.123mol/L and organosilicon mix with fluorescent material by mole concentration, and the packaging plastic layer thickness is 0.4-0.6mm, solidifies with 100-160 ℃ of baking 20-60 minute;
The second layer: it is 6-7um that fluorescent material is selected particle diameter for use, organosilicon selects for use the KER-2500 of SHIN-ETSU HANTOTAI that silica gel is arranged, is that 0.0034-0.0037mol/L and organosilicon mix with fluorescent material by mole concentration, and the packaging plastic layer thickness is 0.2-0.4mm, solidifies with 100-160 ℃ of baking 20-60 minute;
The 3rd layer: organosilicon selects for use the KER-2500 of SHIN-ETSU HANTOTAI that silica gel is arranged, and the packaging plastic layer thickness is 0.5-1.5mm, solidifies earlier with 100-160 ℃ of baking 20-60 minute, again with 140-160 ℃ of baking 4-6 hour.
Adopt the beneficial effect that the present invention brought: the present invention adopts three layers to have silica gel to carry out the LED encapsulation, from inside to outside, the refractive index of each layer encapsulating material forms graded, reduces traditional individual layer encapsulation because the total reflection phenomenon that refringence causes greatly, improve luminous flux, increase rising angle.
Embodiment
A kind of method for packing that utilizes three layers of organosilicon material to realize the LED high light-emitting rate, three layers of encapsulation are adopted in the encapsulation of LED from inside to outside, and with positive white temperature 6500K, 100W integrated high-power (10 strings 10 are also) is an example.
Ground floor: it is 6-7um that fluorescent material is selected particle diameter for use, and refractive index is 2.0, and dominant wavelength is 572nm.Organosilicon selects for use DOW CORNING OE-6550 that silica gel is arranged, and refractive index is 1.54, light transmittance 100%.Is that 0.109-0.123mol/L and organosilicon mix with fluorescent material by mole concentration, gets the 0.115mol/L best results.The packaging plastic layer thickness is 0.4-0.6mm, is about 0.5mm.Solidify with 100-160 ℃ of baking 20-60 minute 150 ℃ of bakings commonly used 30 minutes.Semi-finished product encapsulate after tested, and Tc:6483K (X:0.314, Y:0.3225), luminous flux is 12500-13000lm, color rendering index Ra:81, light efficiency has reached 128lm/W.
The second layer: fluorescent material is selected for use the same, and organosilicon selects for use the KER-2500 of SHIN-ETSU HANTOTAI that silica gel is arranged, and refractive index is 1.41, light transmittance 90%.Is that 0.0034-0.0037mol/L and organosilicon mix with fluorescent material by mole concentration, is about 3 percent of ground floor.The packaging plastic layer thickness is 0.2-0.4mm, is about 0.3mm.Solidify with 100-160 ℃ of baking 20-60 minute 150 ℃ of bakings commonly used 30 minutes.Semi-finished product encapsulate after tested, and Tc:6107K (X:0.3204, Y:0.327), luminous flux is 12200-12800lm, color rendering index Ra:80, light efficiency is near 124lm/W.
The 3rd layer: this one deck only uses the silica gel of not mixing fluorescent material, transparent enclosure, and organosilicon selects for use the KER-2500 of SHIN-ETSU HANTOTAI that silica gel is arranged, and the packaging plastic layer thickness is 0.5-1.5mm, is about 1mm.Solidify earlier and toasted 20-60 minute with 100-160 ℃, again with 140-160 ℃ of baking 4-6 hour, 100 ℃ commonly used were toasted 1 hour earlier, again with 150 ℃ of bakings 4-6 hour.Finished product is through testing: Tc:6490K(0.3137,0.3235), luminous flux is 12000-12500lm, color rendering index Ra:82, light efficiency has reached more than the 120lm/W.
The factor that influences the launching efficiency of fluorescent material has particle diameter, consider and select the optimal penetration effect of chip to fluorescent material for use, and the small particle diameter lattice is more complete relatively, and efficient is higher, and fluorescent material is selected 6-7um for use.Fluorescent material concentration height causes light efficiency to reduce, light excite influence less, but waste fluorescent material; When concentration was hanged down, the led chip blue light was not fully utilized, and light efficiency reduces more obvious.The fluorescent material refractive index ratio has the silica gel height, increases near the concentration of fluorescent material chip relatively, heightens the refractive index of fluorescent glue, and luminous exitance is good.Utilize the fluorescent glue of three layers of variable concentrations, two kinds of different refractivity packaging plastic encapsulation, the graded of formation material refractive index increases rising angle.
Contrast the encapsulation of traditional individual layer: have silica gel to select KER-2500 for use, support, chip, phosphor material powder are constant, and the finished product colour temperature is 6357K(0.3158, and 0.3283), luminous flux is 9800-10300lm, color rendering index Ra:78, and light efficiency has only 100lm/W.The light efficiency than individual layer of three layers of encapsulating structure has been Duoed about 20lm/W, and colour temperature is approaching, and spectral distribution is done test comparison at one time, and the luminous flux error that difference causes can be ignored.Along with the encapsulation number of plies changes to the 3rd layer by ground floor, light efficiency descends to some extent, and as seen along with the increase of thickness, light transmittance descends.Because what integrated high-power sent is white light, exiting surface is a plane, and luminous flux is very high, there is scattering again in light in the fluorescent glue transmission process, so the graded of material refractive index is influential to the variation of luminous flux, theoretical and reality shows that all the multilayer encapsulation is helpful to improving luminous flux.For the fluorescent glue optium concentration, in providing the molar concentration scope, ground floor is got median, considers launching efficiency, much also is to consider best launching efficiency than second layer concentration height, and fluorescent material mainly is distributed in ground floor; The second layer is got and is partial to high concentration, considers graded index, and thickness thinning increases rising angle relatively, reduces Fresnel loss---and transmissivity improves, and reflectivity reduces; The 3rd layer constant, considers last rising angle, and not mix fluorescent material be because the main effect of last one deck is the uniformity of improving hot spot and improving light output.

Claims (1)

1. method for packing that utilizes three layers of organosilicon material to realize the LED high light-emitting rates, three layers of encapsulation are adopted in the encapsulation of LED from inside to outside,
Ground floor: it is 6-7um that fluorescent material is selected particle diameter for use, organosilicon selects for use DOW CORNING OE-6550 that silica gel is arranged, is that 0.109-0.123mol/L and organosilicon mix with fluorescent material by mole concentration, and the packaging plastic layer thickness is 0.4-0.6mm, solidifies with 100-160 ℃ of baking 20-60 minute;
The second layer: it is 6-7um that fluorescent material is selected particle diameter for use, organosilicon selects for use the KER-2500 of SHIN-ETSU HANTOTAI that silica gel is arranged, is that 0.0034-0.0037mol/L and organosilicon mix with fluorescent material by mole concentration, and the packaging plastic layer thickness is 0.2-0.4mm, solidifies with 100-160 ℃ of baking 20-60 minute;
The 3rd layer: organosilicon selects for use the KER-2500 of SHIN-ETSU HANTOTAI that silica gel is arranged, and the packaging plastic layer thickness is 0.5-1.5mm, solidifies earlier with 100-160 ℃ of baking 20-60 minute, again with 140-160 ℃ of baking 4-6 hour.
CN201310113591.9A 2013-04-02 2013-04-02 Three layers of organosilicon material are utilized to realize the method for packing of LED high light-emitting rate Active CN103219452B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104037276A (en) * 2014-06-24 2014-09-10 合肥工业大学 Multi-layer white light LED (Light Emitting Diode) device with gradient refractive indexes and packaging method thereof

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US20060099449A1 (en) * 2004-11-09 2006-05-11 Kabushiki Kaisha Toshiba Light-emitting device
CN101271948A (en) * 2008-04-29 2008-09-24 深圳市量子光电子有限公司 LED encapsulation structure and forming method thereof
CN101740705A (en) * 2009-12-02 2010-06-16 深圳市众明半导体照明有限公司 Warm white LED and preparation method thereof
CN102097575A (en) * 2010-12-30 2011-06-15 东莞市品元光电科技有限公司 White LED (light-emitting diode) packaging structure
CN102244165A (en) * 2011-07-20 2011-11-16 福建泰德视讯数码科技有限公司 LED encapsulation process
CN102637810A (en) * 2012-04-25 2012-08-15 中国科学院半导体研究所 LED (light-emitting diode) packaging structure and packaging molding method
CN102983254A (en) * 2012-11-05 2013-03-20 江苏稳润光电有限公司 White light light-emitting diode (LED) encapsulation method

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060099449A1 (en) * 2004-11-09 2006-05-11 Kabushiki Kaisha Toshiba Light-emitting device
CN101271948A (en) * 2008-04-29 2008-09-24 深圳市量子光电子有限公司 LED encapsulation structure and forming method thereof
CN101740705A (en) * 2009-12-02 2010-06-16 深圳市众明半导体照明有限公司 Warm white LED and preparation method thereof
CN102097575A (en) * 2010-12-30 2011-06-15 东莞市品元光电科技有限公司 White LED (light-emitting diode) packaging structure
CN102244165A (en) * 2011-07-20 2011-11-16 福建泰德视讯数码科技有限公司 LED encapsulation process
CN102637810A (en) * 2012-04-25 2012-08-15 中国科学院半导体研究所 LED (light-emitting diode) packaging structure and packaging molding method
CN102983254A (en) * 2012-11-05 2013-03-20 江苏稳润光电有限公司 White light light-emitting diode (LED) encapsulation method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104037276A (en) * 2014-06-24 2014-09-10 合肥工业大学 Multi-layer white light LED (Light Emitting Diode) device with gradient refractive indexes and packaging method thereof

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Address after: 528248, No. 29, Huangqi section, Guangfo road, Nanhai District, Guangdong, Foshan

Patentee after: Foshan City Jin Bang Optoelectronics Technology limited company

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Address after: The town of Nanhai District, Guangdong city of Foshan province Luo village 528226 East Street Lutang Industrial Zone lighting company

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Address before: 528248, No. 29, Huangqi section, Guangfo road, Nanhai District, Guangdong, Foshan

Patentee before: Foshan City Jin Bang Optoelectronics Technology limited company