CN101271948A - LED encapsulation structure and forming method thereof - Google Patents
LED encapsulation structure and forming method thereof Download PDFInfo
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- CN101271948A CN101271948A CNA2008100670224A CN200810067022A CN101271948A CN 101271948 A CN101271948 A CN 101271948A CN A2008100670224 A CNA2008100670224 A CN A2008100670224A CN 200810067022 A CN200810067022 A CN 200810067022A CN 101271948 A CN101271948 A CN 101271948A
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- silica gel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Abstract
The invention relates to an LED encapsulation structure, which comprises an LED chip, a cup body for housing the LED chip, an LED encapsulation body and a supporter which extends out of the encapsulation body and is electrically connected with the LED chip. The encapsulation body comprises a multi-layer silica gel, the index of refraction of which is reduced layer by layer from the inside out accordingly to the LED chip. The invention also relates to a molding method of the LED encapsulation structure. The LED encapsulation structure adopts the multi-layer silica gel with the index of refraction reduced layer by layer, which not only provides better heat dissipation, but also avoids the single index of refraction of the encapsulation material, thus increasing the angle of total reflection of an LED lens, improving the utility rate of luminous energy and acquiring the extremely high external quantum efficiency.
Description
Technical field
The present invention relates to emitting components, relate in particular to a kind of direct insertion LED encapsulating structure and forming method thereof.
Background technology
LED (Light Emitting Diode), promptly light-emitting diode is a kind of semiconductor solid luminescence device.It is to utilize the solid semiconductor chip as luminescent material.When two ends add forward voltage, son and majority that dams that dams of the minority in the semiconductor takes place compoundly, emits the energy of surplus and causes photo emissions, directly sends the light of red, orange, yellow, green, blue, blue, purple look.Led light source since have high energy-conservation, the life-span long, be beneficial to advantage such as environmental protection, and degree of obtaining is used widely.
LED generally includes following classification: direct insertion LED (DIP LED), adopting surface mounted LED (SMD LED), encapsulating adopting surface mounted LED (TOP LED) and high-power formula LED (POWER LED).Wherein, direct insertion LED has brightness height, the height of anti-welding temperature the, suitable what and maximizes advantage such as use and accepted by users.
Traditional LED encapsulating structure, as shown in Figure 1, two elongated supports 43 that comprise led chip 41, LED packaging body 42, stretch out in packaging body and 44 and the metal wire 46 that is connected led chip 41 and two supports, the end that one of them support 43 is inserted in the packaging body 42 is a cup 45, and led chip 41 is arranged in the cup 45.Usually, LED packaging body 42 adopts epoxy encapsulation, because the poor radiation of epoxy resin, when LED lighted, led chip 41 can produce a large amount of heats, and epoxy resin can not in time distribute these heats, cause led chip 41 to continue operation at high temperature, produce very big light decay.
In addition, the LED luminescent material sends when light transmission chip 41 enters the epoxy encapsulation body and can reflect, the refraction coefficient of chip 41 materials is usually more than 2.0, and the air dielectric refraction coefficient is 1, owing to have only the transition of one deck epoxy resin between them, causes the encapsulating material refraction coefficient single, cause LED lens (the being packaging body 42) angle of total reflection little, make light greatly can not reflect lens but in the reflected back lens, producing very big luminous energy wastes, and causes external quantum efficiency low.
Summary of the invention
In view of this, be necessary to provide a kind of perfect heat-dissipating, LED encapsulating structure and LED encapsulating structure forming method that external quantum efficiency is high.
A kind of LED encapsulating structure, it comprises led chip, accommodate the cup of led chip, LED packaging body, the support that stretches out in packaging body and be electrically connected with led chip, this packaging body comprises multilayer silica gel, and the relative led chip of the refraction coefficient of multilayer silica gel successively reduces from inside to outside.
A kind of LED encapsulating structure forming method, it may further comprise the steps:
In having the mould of predetermined die cavity, charge into one deck silica gel at least according to refraction coefficient order from low to high;
Led chip is inserted in the cup, led chip and support are electrically connected;
The led chip that will be connected, support and cup are inverted and are inserted in the mould that is filled with one deck silica gel at least;
In mould, charge into the silica gel of one deck at least that refraction coefficient is higher than the refraction coefficient that charges into the silica gel in mould according to refraction coefficient order from low to high, and baking molding.
Compared with prior art, in described LED encapsulating structure, at first adopt silica gel as package material, have than the better heat dispersion of epoxy resin, in conjunction with the heat sinking function of support, the heat that makes LED light the back generation can be derived efficiently, improve heat dispersion greatly, reduce light decay.And the refraction coefficient of packaging body successively reduces, and avoids the encapsulating material refraction coefficient single thus, can increase the angle of total reflection of LED light in packaging body, improves the efficiency of light energy utilization, obtains high external quantum efficiency.
Description of drawings
Fig. 1 is traditional LED encapsulating structure schematic diagram.
Fig. 2 is the LED encapsulating structure schematic diagram that first embodiment of the invention provides.
Fig. 3 is the LED encapsulating structure forming method flow chart among Fig. 2.
Fig. 4 is the LED encapsulating structure schematic diagram that second embodiment of the invention provides.
Fig. 5 is the LED encapsulating structure schematic diagram that third embodiment of the invention provides.
Embodiment
In order to make purpose of the present invention, technical scheme and advantage clearer,, the present invention is further elaborated below in conjunction with drawings and Examples.Should be appreciated that specific embodiment described herein only in order to explanation the present invention, and be not used in qualification the present invention.
See also Fig. 2, the LED encapsulating structure 10 that provides for first embodiment of the invention.This LED encapsulating structure 10 comprises led chip 11, LED packaging body 12, stretch out in packaging body 12 two supports 13 and 14, accommodate the cup 15 of led chip 11 and be connected led chip 11 and two metal wires 16 of support 13,14.
Led chip 10 can be the solid semiconductor chip, and its luminescent material can be blue light GaN or GaInN material, also can send other luminescent materials of red, orange, yellow, green, blue, blue, purple coloured light certainly.LED packaging body 12 comprises multilayer silica gel, and the relative led chip 11 of the refraction coefficient of multilayer silica gel successively reduces from inside to outside.As shown in Figure 2, the multilayer silica gel of present embodiment adopts three layers silica gel form, is followed successively by second layer of silica gel 122 of first layer of silica gel 121 near led chip 11, next-door neighbour's first layer of silica gel 121 from inside to outside and is close to second layer of silica gel 122 and is positioned at outermost the 3rd layer of silica gel 123.Wherein, first layer of silica gel, 121 refraction coefficients are the highest, the refraction coefficient of second layer of silica gel 122 takes second place, the refraction coefficient of the 3rd layer of silica gel 123 is minimum, for example first, second and third layer of silica gel 121,122,123 can adopt SZR-1016 type silica gel, X-32-2723 type silica gel, the KER-2500 type silica gel that company of SHIN-ETSU HANTOTAI produces respectively, their refraction coefficient is respectively: 1.52,1.50,1.41.
Each layer of silica gel 121,122,123 can be to cover at led chip 11 and mutual stacked lens arrangement, and the thickness of every layer of silica gel is roughly the same.Certainly, each layer of silica gel 121,122,123 can be made arbitrary shape, to realize different hot spots and lighting angle requirement.
First layer of silica gel 121 is near support 13 and 14, and two stands 13 and 14 can be inserted in first layer of silica gel 121, interfixes by a silica gel basic unit 19 between the two stands 13 and 14 and first layer of silica gel 121.This silica gel basic unit 19 can be with three layers of fronts in the silica gel of one deck same model arbitrarily, also can be and the silica gel of the three layers of different model in front can select viscosity silica gel preferably, so that the front is secured on the support for three layers.
Two supports 13 and 14 are parallel to each other and stretch out in packaging body 12 along same direction, can be two pins of straight extension, also can be to form bending in the part that is stretching out in packaging body 12.Two supports 13 and 14 adopt metal materials, as iron, copper or aluminum, are preferably copper, also can be iron, copper or the aluminium of electroplate, get rusty to prevent support 13 and 14.Two supports 13 and 14 are respectively as negative and positive the two poles of the earth, and are electrically connected with led chip 11 by two wires 16.
As shown in Figure 2, suppose that the refraction coefficient of first, second and third layer of silica gel 121,122,123 is followed successively by: n1, n2, n3, and n1＞n2＞n3.Light by led chip 11 inspires is refracted into first layer of silica gel 121 through chip 11 earlier, and the refraction coefficient of supposing chip 11 is n
0, the cirtical angle of total reflection when light enters first layer of silica gel 121 is arcsin (n
1/ n
0), hence one can see that, n
1More near n
0, the cirtical angle of total reflection is big more, and light outgoing efficient is high more.Then light is refracted into second layer of silica gel 122 by first layer of silica gel 121, because the refraction coefficient of first layer of silica gel 121 is higher than second layer of silica gel 122, the cirtical angle of total reflection when light enters is arcsin (n
2/ n
1), if the first single layer of silica gel 121 directly enters in the air, the cirtical angle of total reflection of this moment is arcsin (1/n
1), clearly because n
2/ n
1＞1/n
1So, arcsin (n
2/ n
1)＞arcsin (1/n
1).Therefore through first layer of silica gel, 121 to second layer of silica gel 122, its cirtical angle of total reflection obtains to increase, and this means that also two-layer silica gel just can reach the effect that increases the cirtical angle of total reflection to a certain extent.Equally, when light during from second layer of silica gel, 122 to second layer of silica gel 123, the cirtical angle of total reflection is bigger than directly enter the airborne cirtical angle of total reflection from second layer of silica gel 122, thus, by transition layer by layer, the luminous energy that makes led chip 11 send reflects packaging body 12 more, improves light output efficiency or external quantum efficiency.By said process n as can be known
2With n
1Approaching more, its ratio is big more, and the cirtical angle of total reflection is also big more, light output efficiency or external quantum efficiency superelevation.The refraction coefficient that is to say adjacent layer is approaching more, and light output efficiency or external quantum efficiency are high more.
For each LED, the refraction coefficient of led chip 11 is fixed and is belonged to optically denser medium, for example, its refraction coefficient is usually more than 2.0, according to top description as can be known, when the refraction coefficient at led chip 11 is 2.0, can be between led chip 11 and air multilayer silica gel at interval, and the refraction coefficient of every layer of silica gel is between 2.0 and 1, and the relative led chip of the refraction coefficient of multilayer silica gel is successively reducing from inside to outside.In addition, be understandable that the refraction coefficient of first layer of silica gel 121 also can be greater than the refraction coefficient of led chip 11, thereby make light be refracted into earlier first layer of silica gel 121 fully.Certainly, the refraction coefficient of multilayer silica gel also can evenly successively decrease.And the number of plies of multilayer silica gel is many more, and then the refraction coefficient of adjacent layer is approaching more, and light output efficiency or external quantum efficiency are high more.Thereby for satisfying actual needs, the silica gel number of plies is not limited to described three layers of present embodiment, can be more than three layers, specifically can decide according to the difference of led chip refraction coefficient, silica gel refraction coefficient, lighting angle etc.
Therefore, in the LED encapsulating structure 10 that the embodiment of the invention provides, at first adopt the material of silica gel as packaging body 12, have than the better heat dispersion of epoxy resin, heat sinking function in conjunction with support, the heat that makes LED light the back generation can be derived efficiently, improves heat dispersion greatly, reduces light decay.And packaging body 12 comprises the multilayer silica gel with different refraction coefficients, avoids the encapsulating material refraction coefficient single thus, and increases the angle of total reflection of LED light in packaging body, improves the efficiency of light energy utilization, obtains high external quantum efficiency.
Seeing also Fig. 3, for the LED encapsulating structure forming method that the embodiment of the invention provides, is example to form above-mentioned LED encapsulating structure 10.This LED encapsulating structure forming method may further comprise the steps:
(1) in having the mould of predetermined die cavity, charges into one deck silica gel at least according to refraction coefficient order from low to high;
(2) led chip 11 is inserted in the cup 15, and led chip 11 and support 13,14 are electrically connected;
The led chip 11 that (3) will be connected, support 13 and 14 and cup 15 be inverted and insert in the mould that is filled with one deck silica gel at least;
(4) in mould, charge into the silica gel of one deck at least that refraction coefficient is higher than the refraction coefficient that has charged into the silica gel in mould in the step (1) according to refraction coefficient order from low to high, and baking molding.
In step (1), have the mould of predetermined die cavity, promptly have in the mould of the die cavity of making lens shape and charge into the 3rd minimum layer of silica gel 123 of a small amount of refraction coefficient.Be understandable that, when layer of silica gel is more than three layers, because every layer thickness attenuation, therefore, can be earlier in this step (1) charge into the layer of silica gel of two or more different refraction coefficients in the mould.At this moment, according to refraction coefficient order filling gel layer from low to high in mould.
Step (2) is actually the formation of semi-finished product LED, is the formation of exposed LED.Earlier led chip 11 is inserted in the cup 15, led chip 11 and support 13,14 are electrically connected again, can adopt metal wire, for example gold thread links to each other, simultaneously prebake conditions the 3rd layer of silica gel 123.
The semi-finished product LED inversion insertion that step (2) is formed is filled with in the mould of the 3rd layer of silica gel 123.And then in mould, fill second layer of silica gel 122 and first layer of silica gel 121 successively, every layer of silica gel can carry out the prebake conditions moulding when filling, to dry second or one layer of silica gel 122 or 121.LED can be extracted the mould bar after baking is finished, finish the encapsulation of LED.In addition, when filling first layer of silica gel 121, can first layer of silica gel 121 be full of mould, but leave a little space, charge at last silica gel basic unit 19 to mould full till, last baking molding.Each layer of silica gel in this step also is to fill according to refraction coefficient order from low to high.
Be understandable that, in step (1), can also charge into the 3rd and second layer of silica gel 123 and 122 earlier, recharge first layer of silica gel 121 at last.In addition, in the above-mentioned encapsulation step with each layer silica gel prebake conditions several times, silica gel and not exclusively drying during each prebake conditions, just all layer of silica gel are dried fully when having only roasting last one deck, can every layer of silica gel not carried out prebake conditions earlier yet, when charging into last one deck, once all silica gel are dried fully.
See also Fig. 4, the LED encapsulating structure 20 that provides for second embodiment of the invention.The LED encapsulating structure 10 of this LED encapsulating structure 20 and first embodiment is basic identical, for example, comprise led chip 11, LED packaging body 12, stretch out in packaging body 12 two supports 13 and 14, accommodate the cup 15 of led chip 11 and be connected led chip 11 and two metal wires 16 of support 13,14, all there is description these components identical fronts, among Fig. 4 with Fig. 2 in identical label represent components identical, do not repeat them here.The structure difference of two embodiment is that LED encapsulating structure 20 next-door neighbours first layer of silica gel 121 is provided with epoxy resin layer 29.Utilize the strong viscosity of epoxy resin, make 121,122,123 firm being fixed on the support 13,14 of three layer of silica gel, prevent that three layer of silica gel 121,122,123 from coming off.Like this, the range of choice of three layer of silica gel 121,122,123 hardness just can enlarge, and the model of three layer of silica gel 121,122,123 selects the space also to increase, and the selectivity of refraction coefficient also increases, and further improves external quantum efficiency thus.
The forming method of LED encapsulating structure 20 is similar to the forming method of LED encapsulating structure 10, when difference is to fill first layer of silica gel 121, first layer of silica gel 121 is not full of mould, but leaves a little space, again baking molding.Charge at last epoxy resin to mould full till, baking molding is extracted mould with LED, making finishes.
See also Fig. 5, the LED encapsulating structure 30 that provides for third embodiment of the invention.The LED encapsulating structure 20 of this LED encapsulating structure 30 and first embodiment is basic identical, among Fig. 5 with Fig. 2 in components identical adopt identical label, two LED encapsulating structures 30 and 20 differences are that cup 15 extends out to few fin 38 outside packaging body 12.The quantity of fin 38 can be single or multiple, and cup 15 is as the substrate of a plurality of fin, and a plurality of fin are extended by cup 15 at intervals.Cup 15 can with two stands 13 and 14 in one be structure as a whole.
Fin 38 can adopt metal material, as copper or aluminum, is preferably copper, and more preferably the copper of electroplate gets rusty to prevent support 13 and 14.The part that fin 38 is inserted into packaging body 12 can contact with two supports 13 and 14, for example is inserted in first layer of silica gel 121, so that also can carry out the transmission and the fixing cooling fins 38 of heat therebetween.Fin 38 is between two supports 13 and 14, and the cross sectional shape of fin 38 is preferably cylindrical or rectangle, can certainly adopt other shapes, is advisable with the space that can make full use of between two supports 13 and 14.
The above only is preferred embodiment of the present invention, not in order to restriction the present invention, all any modifications of being done within the spirit and principles in the present invention, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1, a kind of LED encapsulating structure, it comprises led chip, accommodate the cup of led chip, LED packaging body, the support that stretches out in packaging body and be electrically connected with led chip, it is characterized in that, described packaging body comprises multilayer silica gel, and the relative led chip of the refraction coefficient of described multilayer silica gel successively reduces from inside to outside.
2, LED encapsulating structure as claimed in claim 1 is characterized in that, described support and described multilayer silica gel fix by epoxy resin.
3, LED encapsulating structure as claimed in claim 2 is characterized in that, layer of silica gel and support near support in the described multilayer silica gel fix by epoxy resin.
4, LED encapsulating structure as claimed in claim 1 is characterized in that, described multilayer silica gel is to cover at led chip and mutual stacked lens arrangement.
5, LED encapsulating structure as claimed in claim 1 is characterized in that, described cup extends out to few fin outside packaging body.
6, LED encapsulating structure as claimed in claim 1 is characterized in that, the refraction coefficient of every layer of silica gel is less than or equal to the refraction coefficient of led chip in the described multilayer silica gel.
7, a kind of LED encapsulating structure forming method, it may further comprise the steps:
In having the mould of predetermined die cavity, charge into one deck silica gel at least according to refraction coefficient order from low to high;
Led chip is inserted in the cup, and led chip and support are electrically connected;
The led chip that will be connected, support and cup are inverted and are inserted in the mould that is filled with one deck silica gel at least;
In mould, charge into the silica gel of one deck at least that refraction coefficient is higher than the refraction coefficient that charges into the silica gel in mould according to refraction coefficient order from low to high, and baking molding.
8, LED encapsulating structure forming method as claimed in claim 7 is characterized in that, further charges into the epoxy resin of fixing described support and described multilayer silica gel in mould after charging into all layer of silica gel.
9, LED encapsulating structure forming method as claimed in claim 7 is characterized in that, every layer of silica gel carries out prebake conditions after charging into mould, when having filled last one deck all layer of silica gel is dried fully then.
10, LED encapsulating structure forming method as claimed in claim 7 is characterized in that, before led chip is inserted cup, extends outward at least one fin by the bottom of cup.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN200810067022A CN100585894C (en) | 2008-04-29 | 2008-04-29 | LED encapsulating structure and forming method thereof |
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|---|---|---|---|
| CN200810067022A CN100585894C (en) | 2008-04-29 | 2008-04-29 | LED encapsulating structure and forming method thereof |
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| CN101271948A true CN101271948A (en) | 2008-09-24 |
| CN100585894C CN100585894C (en) | 2010-01-27 |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101887940A (en) * | 2010-06-25 | 2010-11-17 | 深圳雷曼光电科技股份有限公司 | LED encapsulating structure and method thereof |
| CN102738316A (en) * | 2011-04-01 | 2012-10-17 | 惟昌企业股份有限公司 | Improved method for packaging and forming of LED and packaging structure manufactured by utilizing the same |
| CN103219452A (en) * | 2013-04-02 | 2013-07-24 | 佛山市金帮光电科技有限公司 | Packaging method for realizing high light emitting efficiency of LED by three-layer organic silicon material |
| CN103489997A (en) * | 2012-06-09 | 2014-01-01 | 王树生 | LED and LED manufacturing method |
| CN103681991A (en) * | 2013-12-20 | 2014-03-26 | 纳晶科技股份有限公司 | Silicone lens for LED (Light Emitting Diode) packaging and manufacturing method thereof |
| CN104037276A (en) * | 2014-06-24 | 2014-09-10 | 合肥工业大学 | Multi-layer white light LED (Light Emitting Diode) device with gradient refractive indexes and packaging method thereof |
| CN104061816A (en) * | 2013-03-22 | 2014-09-24 | 丰田自动车工程及制造北美公司 | Thermal energy guiding systems including anisotropic thermal guiding coatings and methods for fabricating the same |
| CN107658376A (en) * | 2017-09-11 | 2018-02-02 | 聚灿光电科技（宿迁）有限公司 | A kind of adopting surface mounted LED encapsulates particle |
| CN108417702A (en) * | 2018-02-01 | 2018-08-17 | 苏州鑫凱康电子材料有限公司 | A kind of deep ultraviolet LED encapsulation structure with heat sinking function |
| CN114023828A (en) * | 2021-09-26 | 2022-02-08 | 佛山市顺德区蚬华多媒体制品有限公司 | Sensor and manufacturing method thereof |
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| CN102637810A (en) * | 2012-04-25 | 2012-08-15 | 中国科学院半导体研究所 | LED (light-emitting diode) packaging structure and packaging molding method |
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2008
- 2008-04-29 CN CN200810067022A patent/CN100585894C/en not_active Expired - Fee Related
Cited By (15)
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|---|---|---|---|---|
| CN101887940A (en) * | 2010-06-25 | 2010-11-17 | 深圳雷曼光电科技股份有限公司 | LED encapsulating structure and method thereof |
| CN102738316A (en) * | 2011-04-01 | 2012-10-17 | 惟昌企业股份有限公司 | Improved method for packaging and forming of LED and packaging structure manufactured by utilizing the same |
| CN103489997B (en) * | 2012-06-09 | 2016-02-03 | 王树生 | Led |
| CN103489997A (en) * | 2012-06-09 | 2014-01-01 | 王树生 | LED and LED manufacturing method |
| CN104061816A (en) * | 2013-03-22 | 2014-09-24 | 丰田自动车工程及制造北美公司 | Thermal energy guiding systems including anisotropic thermal guiding coatings and methods for fabricating the same |
| CN104061816B (en) * | 2013-03-22 | 2018-05-11 | 丰田自动车工程及制造北美公司 | Thermal energy guiding system and its manufacture method including anisotropic thermal guiding coating |
| CN103219452B (en) * | 2013-04-02 | 2015-11-11 | 佛山市金帮光电科技有限公司 | Three layers of organosilicon material are utilized to realize the method for packing of LED high light-emitting rate |
| CN103219452A (en) * | 2013-04-02 | 2013-07-24 | 佛山市金帮光电科技有限公司 | Packaging method for realizing high light emitting efficiency of LED by three-layer organic silicon material |
| CN103681991A (en) * | 2013-12-20 | 2014-03-26 | 纳晶科技股份有限公司 | Silicone lens for LED (Light Emitting Diode) packaging and manufacturing method thereof |
| CN104037276A (en) * | 2014-06-24 | 2014-09-10 | 合肥工业大学 | Multi-layer white light LED (Light Emitting Diode) device with gradient refractive indexes and packaging method thereof |
| CN107658376A (en) * | 2017-09-11 | 2018-02-02 | 聚灿光电科技（宿迁）有限公司 | A kind of adopting surface mounted LED encapsulates particle |
| CN108417702A (en) * | 2018-02-01 | 2018-08-17 | 苏州鑫凱康电子材料有限公司 | A kind of deep ultraviolet LED encapsulation structure with heat sinking function |
| CN108417702B (en) * | 2018-02-01 | 2020-02-04 | 浙江大明光电科技有限公司 | Deep ultraviolet LED packaging structure with heat dissipation function |
| CN114023828A (en) * | 2021-09-26 | 2022-02-08 | 佛山市顺德区蚬华多媒体制品有限公司 | Sensor and manufacturing method thereof |
| CN114023828B (en) * | 2021-09-26 | 2023-08-01 | 佛山市顺德区蚬华多媒体制品有限公司 | Sensor and manufacturing method thereof |
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| Publication number | Publication date |
|---|---|
| CN100585894C (en) | 2010-01-27 |
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