CN108807648B - A kind of light-emitting diode encapsulation structure and packaging method - Google Patents
A kind of light-emitting diode encapsulation structure and packaging method Download PDFInfo
- Publication number
- CN108807648B CN108807648B CN201810646547.7A CN201810646547A CN108807648B CN 108807648 B CN108807648 B CN 108807648B CN 201810646547 A CN201810646547 A CN 201810646547A CN 108807648 B CN108807648 B CN 108807648B
- Authority
- CN
- China
- Prior art keywords
- fluorescent powder
- line
- buffer layer
- glue
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005538 encapsulation Methods 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000004806 packaging method and process Methods 0.000 title abstract description 16
- 239000000843 powder Substances 0.000 claims abstract description 127
- 239000000758 substrate Substances 0.000 claims abstract description 51
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 11
- 230000003287 optical effect Effects 0.000 claims abstract description 9
- 239000003292 glue Substances 0.000 claims description 34
- 238000000576 coating method Methods 0.000 claims description 31
- 239000011248 coating agent Substances 0.000 claims description 30
- 229920005989 resin Polymers 0.000 claims description 23
- 239000011347 resin Substances 0.000 claims description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- 239000000203 mixture Substances 0.000 claims description 17
- 239000000919 ceramic Substances 0.000 claims description 11
- 239000002131 composite material Substances 0.000 claims description 10
- 239000003822 epoxy resin Substances 0.000 claims description 10
- 229920000647 polyepoxide Polymers 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 238000004140 cleaning Methods 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 238000007747 plating Methods 0.000 claims 1
- 230000007423 decrease Effects 0.000 abstract description 5
- 238000010521 absorption reaction Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 134
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 239000000741 silica gel Substances 0.000 description 18
- 229910002027 silica gel Inorganic materials 0.000 description 18
- 230000000052 comparative effect Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 230000008901 benefit Effects 0.000 description 7
- 150000004645 aluminates Chemical class 0.000 description 6
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 230000032683 aging Effects 0.000 description 3
- 230000001795 light effect Effects 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 241000218202 Coptis Species 0.000 description 2
- 235000002991 Coptis groenlandica Nutrition 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000003679 aging effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 210000002421 cell wall Anatomy 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000000243 photosynthetic effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
This application provides a kind of light-emitting diode encapsulation structure and packaging methods.The light-emitting diode encapsulation structure includes: heat-radiating substrate, LED chip, the first fluorescent powder glue-line, the second fluorescent powder glue-line, first buffer layer and second buffer layer；The LED chip is arranged on the heat-radiating substrate, first buffer layer, the first fluorescent powder glue-line, second buffer layer and the second phosphor powder layer is sequentially coated in the LED chip, to form sandwich optical texture；The first filter layer is also coated between the first buffer layer and the LED chip；And/or the second filter layer is also coated between the first fluorescent powder glue-line and second buffer layer.LED encapsulation structure and packaging method provided by the invention utilize buffer layer and filter layer, on the one hand avoid chip and fluorescent powder directly contacts, and solve the problems, such as the quantum efficiency decline of fluorescent powder caused by high temperature；On the other hand the problem of mutual absorption between phosphor powder layer causes fluorescent powder quantum efficiency to decline is avoided.
Description
Technical field
The present invention relates to white-light LED encapsulation technologies, belong to technical field of semiconductors.
Background technique
White light LEDs are relative to conventional illumination sources due to having low energy consumption, the service life is long, small in size, response is fast, pollution-free etc.
Advantage is widely used in the fields such as LCD backlight application, mobile phone, signal lamp and solid-state lighting.LED white light is realized at present
Mode mainly matches fluorescent powder mode by multi-chip combination or single-chip and realizes.Wherein, it is realized using fluorescent powder matching method white
Light LED has many advantages, such as simple, at low cost, the easy industrialization of preparation method, has been widely used for preparing white light LEDs at present.
Realize that the major way of white light has using fluorescent powder matching method: blue chip+yellow fluorescent powder or blue chip+green emitting phosphor
Or yellow fluorescent powder+red fluorescence powder or ultraviolet chip+RGB (RGB fluorescent powder).Wherein blue chip+yellow fluorescent powder side
Formula can not meet the needs of high colour developing high photosynthetic efficiency since colour rendering index is too low simultaneously；Therefore fluorescence is matched using single-chip at present
Powder realizes that white light is typically employed to two or more kinds of fluorescent powders.Based on above scheme, certainly existed between fluorescent powder spectrum
Be overlapped coupling condition, mutual absorption can be generated between fluorescent powder in this case, for example the part light of green emitting phosphor be likely to by
Red fluorescence powder reabsorbs, and light efficiency is caused to decline phenomenon.Further, since thermally matched between LED chip and fluorescent powder differ greatly,
Under hot conditions, the quantum efficiency of fluorescent powder will necessarily decline, and further will affect LED encapsulation light efficiency.
Summary of the invention
The purpose of the present invention is being directed to the deficiency of existing light-emitting diode packaging technology, a kind of light emitting diode envelope is proposed
Assembling structure and packaging method.
Technical scheme is as follows:
The present invention provide a kind of light-emitting diode encapsulation structure include: heat-radiating substrate, LED chip, the first fluorescent powder glue-line,
Second fluorescent powder glue-line, first buffer layer and second buffer layer；The LED chip is arranged on the heat-radiating substrate, the LED
First buffer layer, the first fluorescent powder glue-line, second buffer layer and the second fluorescent powder glue-line are sequentially coated on chip, to be formed
Sandwich optical texture.
Preferably, the first filter layer is also coated between the first buffer layer and the LED chip；
Preferably, the second filter layer is also coated between the first fluorescent powder glue-line and second buffer layer.
Preferably, first filter layer is groove type structure, and the first buffer layer and the first fluorescent powder glue-line are located at
In the groove of first filter layer；
Preferably, second filter layer is groove type structure, and the second buffer layer and the second fluorescent powder glue-line are located at
In the groove of second filter layer.
Preferably, the thickness of the first buffer layer and the first fluorescent powder glue-line and it is less than or equal to first filter layer
The depth of groove.
Preferably, the thickness of the second buffer layer and the second fluorescent powder glue-line and it is less than or equal to second filter layer
The depth of groove.
Preferably, lens jacket is additionally provided on the second fluorescent powder glue-line.
Preferably, the sandwich optical texture is rectangular, round or regular polygon.
Preferably, the heat-radiating substrate is copper base, aluminum substrate or ceramic substrate；
Preferably, heat-radiating substrate is ceramic substrate；
Preferably, ceramic substrate is that AlN plates BN composite ceramic substrate.
Preferably, the LED chip is single ultraviolet chip or blue chip；
Preferably, ultraviolet chip peak band is 365~400nm, and blue chip peak band is 400~470nm.
Preferably, the first fluorescent powder glue-line is the mixture of silicon resin glue and red fluorescence powder；Second fluorescence
Arogel layer is the mixture of silicon resin glue and green emitting phosphor or yellow fluorescent powder；The first buffer layer and second buffer layer are
Silicon resin glue or epoxide-resin glue；The first filter layer key reflections feux rouges, the second filter layer key reflections green light or
Yellow light.
Preferably, the red fluorescence powder emission peak wavelength is located at 610~660nm；The green emitting phosphor or yellow
Phosphor emission peak value is located at 510~540nm or 540~570nm.
Preferably, the first buffer layer and second buffer layer are silicon resin glue or epoxide-resin glue；
Preferably, the first buffer layer is silicon resin glue, and the second buffer layer is epoxide-resin glue.
Preferably, first filter layer is feux rouges filter coating；Second filter layer is that green light filter coating or yellow light are filtered
Light film.
Preferably, the first filter layer optical filtering ejected wave section is 580~780nm wave band, the second filter layer optical filtering wave
Section is 510-560nm.
Preferably, the first buffer layer is with a thickness of 50~100 μm, and the second buffer layer is with a thickness of 10~50 μm.
The present invention provides also a kind of LED encapsulation method, comprising: LED chip is fixed on heat-radiating substrate；?
First buffer layer is coated in the LED chip；The first fluorescent powder glue-line is coated in the first buffer layer；It is glimmering described first
Second buffer layer is coated on light arogel layer；The second fluorescent powder glue-line is coated in the second buffer layer, to form sandwich light
Learn structure.
Compared with prior art, the invention has the following advantages:
1, it is all made of buffer layer transition between LED chip and fluorescent powder and between variety classes fluorescent powder, uses slow
Layer good heat conductivity is rushed, can effectively solve the problem that the high temperature thermal mismatching between chip and fluorescent powder leads to external quantum efficiency in fluorescent powder
Decline problem and LED component aging and color float problem.
2, fluorescent powder glue-line uses particular order coating method, and by addition specific wavelength filter layer, can effectively keep away
Exempt from mutual absorbing phenomenon between fluorescent powder, and light output can be concentrated, promotes light extraction efficiency.
Detailed description of the invention
It to describe the technical solutions in the embodiments of the present invention more clearly, below will be to needed in the embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for ability
For the those of ordinary skill of domain, without creative efforts, it can also be obtained according to these attached drawings other attached
Figure.
Fig. 1 is the rough schematic view of packaging method of the present invention.
Fig. 2 is the package structure diagram of light emitting diode of the present invention.
Fig. 3 is the structural schematic diagram of heat-radiating substrate of the present invention.
Fig. 4 is the structural schematic diagram of filter layer of the present invention.
Fig. 5 is the light emitting diode encapsulation structure schematic diagram that the embodiment of the present invention 6 provides.
Fig. 6 is the light emitting diode encapsulation structure schematic diagram that comparative example 4 of the present invention provides.
Fig. 7 is the light-emitting diode encapsulation structure schematic diagram that comparative example 5 of the present invention provides.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that described herein, specific examples are only used to explain the present invention, not
For limiting the present invention.
The present invention provides a kind of light-emitting diode encapsulation structure, as shown in Figure 2, comprising: heat-radiating substrate 228, LED chip
220, the first fluorescent powder glue-line 223, the second fluorescent powder glue-line 226, the first filter layer 221, first buffer layer 222, second filter
Specifically, the LED chip is arranged on the heat-radiating substrate, the LED for layer 224, second buffer layer 225 and lens jacket 227
Be sequentially coated on chip the first filter layer, first buffer layer, the first fluorescent powder glue-line, the second filter layer, second buffer layer and
Second fluorescent powder glue-line, to form sandwich optical texture.
The specific packaging method of above-mentioned light-emitting diode encapsulation structure are as follows: the LED chip is fixed on the substrate,
The first filter layer is coated above LED chip, first buffer layer is coated above first filter layer, in first buffer layer
The first fluorescent powder glue-line of side's coating, then coats the second filter layer above the first fluorescent powder glue-line, applies on the second filter layer
Second buffer layer is covered, the second fluorescent powder glue-line is coated above second buffer layer, forms sandwich optical texture.
Light-emitting diode encapsulation structure provided by the invention divided by upper-part and material outside, further includes: elargol, bracket, gold
Line or alloy wire etc., since these components or material are that components or material are often used in LED technology field, in the present invention no longer in detail
Add description.
Preferably, above-mentioned sandwich optical texture is rectangular, round or regular polygon.Above-mentioned heat-radiating substrate is copper base, aluminium base
Plate or ceramic substrate；Further preferably aforesaid substrate is ceramic substrate；Further preferably above-mentioned ceramic substrate uses AlN table
Face plate BN composite substrate, structural schematic diagram as shown in figure 3, wherein 202 be AlN, 208 be transition zone, and 210 be BN, the substrate
Longitudinal thermally conductive and lateral thermal conductivity can be very excellent.Above-mentioned LED chip is ultraviolet chip or blue chip, preferably ultraviolet core
Piece peak band is 365~400nm, and blue chip peak band is 400~470nm.Above-mentioned first fluorescent powder glue-line is silicon
The mixture of resin glue and red fluorescence powder, the second fluorescent powder glue-line are silicon resin glue and green emitting phosphor or yellow fluorescent powder
Mixture；The peak wavelength of red fluorescence powder, green emitting phosphor and yellow fluorescent powder be located at 610~660nm, 510~
540nm and 540~570nm.Above-mentioned first filter layer is feux rouges filter coating, and key reflections wave band is 580~780nm, the second filter
Photosphere is green light filter coating or yellow light filter coating, and key reflections wave band is 510-560nm.Above-mentioned first buffer layer with a thickness of 50~
100 μm, the second buffer layer is with a thickness of 10~50 μm.
Preferably, first filter layer of the invention is groove type structure, as shown in figure 4, the first buffer layer and first glimmering
Light arogel layer is located in the groove of the first filter layer；
Preferably, the thickness of the first buffer layer and the first fluorescent powder glue-line and less than the first filter layer groove
Depth.
Preferably, the thickness of the first buffer layer and the first fluorescent powder glue-line and the depth with the first filter layer groove
It spends equal, the thickness of the height of the cell wall of the first filter layer groove and first buffer layer and the first fluorescent powder glue-line and holds
It is flat.
Preferably, the second filter layer of the invention is groove type structure, the second buffer layer and the second fluorescent powder glue-line position
In in the groove of the second filter layer.
Preferably, the thickness of the second buffer layer and the second fluorescent powder glue-line and it is less than or equal to second filter layer
The depth of groove.
Using the filter layer structure of " bowl-shape ", the side of the lower surface of fluorescent powder glue-line can be effectively surrounded, further
Avoid mutual absorbing phenomenon between fluorescent powder；Light concentration is exported upwards simultaneously, luminescent properties is improved, light is avoided to distribute from side
Caused by light loss, promoted light extraction efficiency.
The present invention also provides a kind of LED encapsulation method, specific schematic diagram is as shown in Figure 1.
Die bond: above-mentioned one chip is fixed on the substrate by crystal-bonding adhesive, and chip is UV LED chip or blue light
LED chip.
With glue: red fluorescence powder and silica gel are made into the first fluorescent powder glue-line by a certain percentage；By green emitting phosphor or Huang
Color fluorescent powder and silica gel are made into the second fluorescent powder glue-line according to a certain percentage.
Coating: one layer of feux rouges filter coating is applied first on UV LED chip or blue-light LED chip, feux rouges filter coating is to it
Its light transmittance reaches 95% or more, it is therefore an objective to feux rouges after burst of ultraviolel be reflexed to upper layer or side layer, promote light extraction effect
Rate；Silicon resin glue or epoxide-resin glue are then coated with as first buffer layer, about 50~100 μm of the thickness degree of first buffer layer,
Purpose is that chip and fluorescent powder is avoided directly to contact, and heat-conducting buffer layer is formed, by first buffer layer in 80~90 DEG C of baking 10-30
Minute；Then coat the first fluorescent powder glue-line above first buffer layer, 90~100 DEG C baking 10-30 minutes；Then first
One layer of green light filter coating or yellow light filter coating are applied on fluorescent powder glue-line, green light filter coating or yellow light filter coating are to other light transmittances
Reach 95% or more, it is therefore an objective to the excited green light of chip or yellow light filter to upper layer or side layer, on the one hand avoid emitted green
Light or yellow light are absorbed by red fluorescence powder, on the other hand improve light extraction efficiency；Then epoxy resin is coated on filter coating
Glue or epoxide-resin glue, 80~90 DEG C form second buffer layer after baking 10-30 minutes；Finally coated above second buffer layer
Second fluorescent powder glue-line, 90~100 DEG C baking 10-30 minutes, about 10~50 μm of second buffer layer thickness.
Molding: spherical transparent glass is covered by injection molding or directly on the outside of the fluorescent powder glue-line and forms lens
Layer.It should be noted that using the above-mentioned packaging method of the present invention, additionally it is possible to for the encapsulating structures other in the present invention
In.More effectively to illustrate technical solution of the present invention, illustrate technical solution of the present invention below by specific embodiment.
Embodiment 1
The present embodiment packaging method is as shown in Figure 1, LED encapsulation structure schematic diagram is as shown in Figure 2.
Wherein heat-radiating substrate 228 is copper base, and LED chip 220 is blue chip, and peak wavelength is located at 450~452nm,
First filter layer 221 is feux rouges filter coating, and first buffer layer 222 is silicon resin glue, and the first fluorescent powder glue-line 223 is silica gel and nitrogen
The mixture of compound rouge and powder (peak wavelength: 625nm)；Second filter layer 224 is green light filter coating, and second buffer layer 225 is silicon
Resin glue；Second fluorescent powder glue-line 226 is the mixture of silica gel and aluminate green powder (peak wavelength 530nm).
Embodiment 2
The packaging method and structure of the present embodiment are such as embodiment 1.
Wherein heat-radiating substrate 228 is AlN substrate, and LED chip 220 is blue chip, and peak wavelength is located at 450~452nm,
First filter layer 221 is feux rouges filter coating, and first buffer layer 222 is silicon resin glue, and the first fluorescent powder glue-line 223 is silica gel and nitrogen
The mixture of compound rouge and powder (peak wavelength: 625nm)；Second filter layer 224 is green light filter coating, and second buffer layer 225 is silicon
Resin glue；Second fluorescent powder glue-line 226 is the mixture of silica gel and aluminate green powder (peak wavelength 530nm).
Embodiment 3
The packaging method and structure of the present embodiment are such as embodiment 1.
Wherein heat-radiating substrate 228 is AlN/BN composite substrate, and LED chip 220 is blue chip, and peak wavelength is located at 450
~452nm, the first filter layer 221 are feux rouges filter coating, and first buffer layer 222 is silicon resin glue, and the first fluorescent powder glue-line 223 is
The mixture of silica gel and nitride rouge and powder (peak wavelength: 625nm)；Second filter layer 224 is green light filter coating, second buffer layer
225 be silicon resin glue；Second fluorescent powder glue-line 226 is the mixture of silica gel and aluminate green powder (peak wavelength 530nm).
Embodiment 4
The packaging method and structure of the present embodiment are such as embodiment 1.
Wherein heat-radiating substrate 228 is AlN/BN composite substrate, and LED chip 220 is blue chip, and peak wavelength is located at 450
~452nm, the first filter layer 221 are feux rouges filter coating, and first buffer layer 222 is epoxide-resin glue, the first fluorescent powder glue-line 223
For the mixture of silica gel and nitride rouge and powder (peak wavelength: 625nm)；Second filter layer 224 is green light filter coating, the second buffering
Layer 225 is silicon resin glue；Second fluorescent powder glue-line 226 is the mixture of silica gel and aluminate green powder (peak wavelength 530nm).
Embodiment 5
The packaging method and structure of the present embodiment are such as embodiment 1.
Wherein heat-radiating substrate 228 is AlN/BN composite substrate, and LED chip 220 is blue chip, and peak wavelength is located at 450
~452nm, the first filter layer 221 are feux rouges filter coating, and first buffer layer 222 is silicon resin glue, and the first fluorescent powder glue-line 223 is
The mixture of silica gel and nitride rouge and powder (peak wavelength: 625nm)；Second filter layer 224 is green light filter coating, second buffer layer
225 be epoxide-resin glue；Second fluorescent powder glue-line 226 is the mixture of silica gel and aluminate green powder (peak wavelength 530nm).
Embodiment 6
The present embodiment LED encapsulation structure schematic diagram is as shown in Figure 5.
Wherein heat-radiating substrate 228 is AlN/BN composite substrate, and LED chip 220 is blue chip, and peak wavelength is located at 450
~452nm, the first filter layer 221 are feux rouges filter coating, and first buffer layer 222 is silicon resin glue, and the first fluorescent powder glue-line 223 is
The mixture of silica gel and nitride rouge and powder (peak wavelength: 625nm)；Second filter layer 224 is green light filter coating, second buffer layer
225 be epoxide-resin glue；Second fluorescent powder glue-line 226 is the mixture of silica gel and aluminate green powder (peak wavelength 530nm).
Wherein, the first filter layer is groove type structure, and the first buffer layer and the first fluorescent powder glue-line are located at the first filter
In the groove of photosphere；Second filter layer is groove type structure, and the second buffer layer and the second fluorescent powder glue-line are located at the second filter
In the groove of photosphere.
Comparative example 1
The packaging method and structure similar embodiment 5 of the present embodiment, are only the absence of the first filter layer 221.Used structure
Element and material are equivalent with embodiment 5.
Comparative example 2
The packaging method and structure similar embodiment 5 of the present embodiment, are only the absence of the second filter layer 224.Used structure
Element and material are equivalent with embodiment 5.
Comparative example 3
The packaging method and structure similar embodiment 5 of the present embodiment, are only the absence of the first filter layer 221.It filters with second
Layer 224.Used structural detail and material are equivalent with embodiment 5.
Comparative example 4
The raw material such as LED chip, heat-conducting substrate, silica gel, fluorescent powder, gold thread are equal with embodiment 5, encapsulating structure such as Fig. 6
It is shown.Wherein 100 be AlN/BN composite substrate, and 101 be LED blue chip, and 102 be the mixed of silica gel and green and red fluorescence powder
Close object.
Comparative example 5
The raw material such as LED chip, heat-conducting substrate, silica gel, fluorescent powder, gold thread are equal with embodiment 5, encapsulating structure such as Fig. 7
It is shown.Wherein 100 be AlN/BN composite substrate, and 101 be LED blue chip, and 102 be the mixed of silica gel and green and red fluorescence powder
Object is closed, 104 be buffer layer, and ingredient is equivalent with 5 first buffer layer of embodiment.
Table 1 is lighted photochromic data (5000K) for embodiment 1-6 and comparative example 1-5 at room temperature and be can be seen that
The light efficiency after lighting 1000h and 2000h using AlN/BN composite substrate relative to copper base or aluminum nitride ceramic substrate has
Apparent advantage, and color drift is smaller；Due to the main isolating chip of first buffer layer and the first fluorescent adhesive layer, to heating conduction
It is more demanding.And second buffer layer completely cuts off variety classes fluorescent powder, is not very high to heating conduction requirement, but to light transmittance requirement
It is very high, directly decide the encapsulation light efficiency of device.Therefore silicone resin and epoxy is respectively adopted in first buffer layer and second buffer layer
Resin device has apparent advantage in the light efficiency that 1000h and 2000h was initially lighted, lighted to room temperature.Comparative example 1-3 and reality
It applies example 5 to compare, illustrates that the first filter layer and the second filter layer directly affect the initial light effect and ageing properties of light emitting diode.
Meanwhile embodiment 5 and embodiment 6 further demonstrate that, middle the first filter layer and the second filter layer using groove type structure, it can
It further increases initial light effect and slows down the problem of aging of light emitting diode, further improve performance.Comparative example 4 and comparison
Embodiment 5 corresponds to 5 encapsulated result of embodiment and shows the embodiment of the present invention by realizing fluorescent powder and chip isolation, difference
Initial light effect of the reflecting piece to light emitting diode, aging and the color drift performance phase of appropriate wave band are isolated and are added to type fluorescent powder
There is apparent advantage for the prior art.
Table 1 embodiment 1-6 and comparative example 1-5 lights photochromic data (5000K) at room temperature
In table, x, y indicate corresponding coordinate on CIE chromatogram；Ra indicates general display index.
It should be noted that, although term " first ", " second " etc. can be used to describe various elements herein, but this
A little elements should not be limited by these terms.These terms are only used to distinguish an element with another element.For example,
In the case where the range for not departing from example embodiment, first element is referred to alternatively as second element, and similarly, second element can be claimed
For first element.As used herein, term "and/or" includes any combination and the institute of one or more related listed items
There is combination.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc. within mind and principle should all include within protection scope of the present invention.
Claims (8)
1. a kind of light-emitting diode encapsulation structure characterized by comprising heat-radiating substrate, LED chip, the first fluorescent powder glue-line,
Second fluorescent powder glue-line, first buffer layer and second buffer layer；The LED chip is arranged on the heat-radiating substrate, the LED
First buffer layer, the first fluorescent powder glue-line, second buffer layer and the second fluorescent powder glue-line are sequentially coated on chip, to be formed
Sandwich optical texture；
The first filter layer is also coated between the first buffer layer and the LED chip, first filter layer is groove type
Structure, the first buffer layer and the first fluorescent powder glue-line are located in the groove of the first filter layer；And/or
The second filter layer is also coated between the first fluorescent powder glue-line and second buffer layer, second filter layer is groove
Type structure, the second buffer layer and the second fluorescent powder glue-line are located in the groove of the second filter layer.
2. LED encapsulation structure according to claim 1, which is characterized in that be additionally provided on the second fluorescent powder glue-line
Lens jacket.
3. LED encapsulation structure according to claim 1, which is characterized in that the heat-radiating substrate be copper base, aluminum substrate or
Ceramic substrate, wherein the ceramic substrate includes AlN plating BN composite ceramic substrate.
4. LED encapsulation structure according to claim 1, which is characterized in that the LED chip be single ultraviolet chip or
Blue chip.
5. LED encapsulation structure according to claim 1, which is characterized in that the first buffer layer is silicon resin glue or ring
Oxygen resin glue；The second buffer layer is silicon resin glue or epoxide-resin glue.
6. LED encapsulation structure according to claim 1, which is characterized in that the first fluorescent powder glue-line is silicon resin glue
With the mixture of red fluorescence powder；The second fluorescent powder glue-line is the mixed of silicon resin glue and green emitting phosphor or yellow fluorescent powder
Close object.
7. LED encapsulation structure according to claim 1, which is characterized in that first filter layer is feux rouges filter coating；Institute
Stating the second filter layer is green light filter coating or yellow light filter coating.
8. a kind of LED encapsulation method characterized by comprising
Cleaning: selection LED chip and substrate simultaneously clean substrate；
Die bond: LED chip is fixed on the substrate；
With glue: the first fluorescent powder glue-line of configuration and the second fluorescent powder glue-line；
Coating: successively coated in LED chip the first filter layer, first buffer layer, the first fluorescent powder glue-line, the second filter layer,
Second buffer layer and the second fluorescent powder glue-line；
Wherein first filter layer is groove type structure, and the first buffer layer and the first fluorescent powder glue-line are located at first and filter
In the groove of layer, and/or
Second filter layer is groove type structure, and the second buffer layer and the second fluorescent powder glue-line are located at the second filter layer
In groove.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810646547.7A CN108807648B (en) | 2018-06-21 | 2018-06-21 | A kind of light-emitting diode encapsulation structure and packaging method |
| PCT/CN2019/084583 WO2019242405A1 (en) | 2018-06-21 | 2019-04-26 | Light-emitting diode encapsulation structure and encapsulation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810646547.7A CN108807648B (en) | 2018-06-21 | 2018-06-21 | A kind of light-emitting diode encapsulation structure and packaging method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108807648A CN108807648A (en) | 2018-11-13 |
| CN108807648B true CN108807648B (en) | 2019-09-24 |
Family
ID=64084414
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810646547.7A Active CN108807648B (en) | 2018-06-21 | 2018-06-21 | A kind of light-emitting diode encapsulation structure and packaging method |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN108807648B (en) |
| WO (1) | WO2019242405A1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108807648B (en) * | 2018-06-21 | 2019-09-24 | 旭宇光电（深圳）股份有限公司 | A kind of light-emitting diode encapsulation structure and packaging method |
| CN110391323A (en) * | 2019-08-06 | 2019-10-29 | 厦门多彩光电子科技有限公司 | A kind of packaging method and LED package of near ultraviolet full spectrum light effect |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101297405B1 (en) * | 2006-12-26 | 2013-08-19 | 서울반도체 주식회사 | Light emitting device employing dielectric multilayer reflecting mirror |
| CN101707232B (en) * | 2009-12-01 | 2013-04-10 | 桂林电子科技大学 | LED product and manufacture method thereof |
| CN102237477A (en) * | 2010-04-29 | 2011-11-09 | 财团法人工业技术研究院 | Multilayer stack-packaged light- emitting diode |
| EP2428543B1 (en) * | 2010-09-08 | 2013-05-08 | Kabushiki Kaisha Toshiba | Light emitting device |
| TW201403886A (en) * | 2012-07-13 | 2014-01-16 | Ritedia Corp | White light LED |
| JP2017059756A (en) * | 2015-09-18 | 2017-03-23 | シチズン時計株式会社 | Light-emitting device |
| CN108807648B (en) * | 2018-06-21 | 2019-09-24 | 旭宇光电（深圳）股份有限公司 | A kind of light-emitting diode encapsulation structure and packaging method |
-
2018
- 2018-06-21 CN CN201810646547.7A patent/CN108807648B/en active Active
-
2019
- 2019-04-26 WO PCT/CN2019/084583 patent/WO2019242405A1/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| WO2019242405A1 (en) | 2019-12-26 |
| CN108807648A (en) | 2018-11-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105870303B (en) | Full-spectrum LED light source | |
| US9192013B1 (en) | Lighting devices with variable gamut | |
| WO2016197901A1 (en) | Led filament, led filament assembly and led bulb | |
| US9010961B2 (en) | LED integrated packaging light source module | |
| US9960322B2 (en) | Solid state lighting devices incorporating notch filtering materials | |
| TW200836377A (en) | White light emitting device and white light source module using the same | |
| WO2015175657A1 (en) | Solid state lighting devices with color point non-coincident with blackbody locus | |
| TW200935376A (en) | LED display | |
| US9593812B2 (en) | High CRI solid state lighting devices with enhanced vividness | |
| TWM407494U (en) | LED package structure | |
| CN103050615B (en) | A kind of White LED with high color rendering property device | |
| CN204088315U (en) | MCOB LED fluorescent powder separate package structure | |
| TW201143160A (en) | Light-emitting device | |
| CN108807648B (en) | A kind of light-emitting diode encapsulation structure and packaging method | |
| CN107248547A (en) | A kind of high-power LED integrated chip encapsulating structure and its method for packing | |
| CN212062458U (en) | High light efficiency high reliability LED filament lamp packaging structure | |
| US20100230695A1 (en) | LED package structure | |
| CN202585520U (en) | Light-emitting diode light source module structure | |
| CN105810794A (en) | LED packaging structure | |
| CN108561764B (en) | LED filament structure and LED illumination lamp based on it | |
| CN104157637A (en) | MCOB LED package structure | |
| CN101431134B (en) | High-power LED element capable of improving illumination efficiency | |
| CN101684924B (en) | LED lighting module and preparation method | |
| KR102378761B1 (en) | Unified light emitting Package and automobile lamp using the same | |
| CN204189795U (en) | Arc MCOB LED encapsulation structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |