CN108807648A - A kind of light-emitting diode encapsulation structure and packaging method - Google Patents
A kind of light-emitting diode encapsulation structure and packaging method Download PDFInfo
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- CN108807648A CN108807648A CN201810646547.7A CN201810646547A CN108807648A CN 108807648 A CN108807648 A CN 108807648A CN 201810646547 A CN201810646547 A CN 201810646547A CN 108807648 A CN108807648 A CN 108807648A
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- 238000005538 encapsulation Methods 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000004806 packaging method and process Methods 0.000 title abstract description 16
- 239000000843 powder Substances 0.000 claims abstract description 121
- 239000000758 substrate Substances 0.000 claims abstract description 49
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 23
- 230000003287 optical effect Effects 0.000 claims abstract description 9
- 239000003292 glue Substances 0.000 claims description 33
- 239000011248 coating agent Substances 0.000 claims description 24
- 238000000576 coating method Methods 0.000 claims description 24
- 229920005989 resin Polymers 0.000 claims description 22
- 239000011347 resin Substances 0.000 claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- 239000000203 mixture Substances 0.000 claims description 14
- 239000000919 ceramic Substances 0.000 claims description 11
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- 239000003822 epoxy resin Substances 0.000 claims description 10
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
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- 238000010521 absorption reaction Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 143
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 239000000741 silica gel Substances 0.000 description 18
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- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
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- 210000002421 cell wall Anatomy 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
This application provides a kind of light-emitting diode encapsulation structure and packaging methods.The light-emitting diode encapsulation structure includes：Heat-radiating substrate, LED chip, the first fluorescent powder glue-line, the second fluorescent powder glue-line, first buffer layer and second buffer layer；The LED chip is arranged on the heat-radiating substrate, first buffer layer, the first fluorescent powder glue-line, second buffer layer and the second phosphor powder layer is sequentially coated in the LED chip, to form sandwich optical texture；The first filter layer is also coated between the first buffer layer and the LED chip；And/or it is also coated with the second filter layer between the first fluorescent powder glue-line and second buffer layer.LED encapsulation structure and packaging method provided by the invention utilize buffer layer and filter layer, on the one hand avoid chip and fluorescent powder is in direct contact, and solve the problems, such as that the quantum efficiency of fluorescent powder caused by high temperature declines；On the other hand the problem of mutual absorption between phosphor powder layer causes fluorescent powder quantum efficiency to decline is avoided.
Description
Technical field
The present invention relates to white-light LED encapsulation technologies, belong to technical field of semiconductors.
Background technology
Due to having, low energy consumption, long lifespan, small, response is fast, pollution-free etc. relative to conventional illumination sources for white light LEDs
Advantage is widely used in the fields such as LCD backlight application, mobile phone, signal lamp and solid-state lighting.LED white lights are realized at present
Mode mainly matches fluorescent powder mode by multi-chip combination or single-chip and realizes.Wherein, it is realized using fluorescent powder matching method white
Light LED has many advantages, such as simple, at low cost, the easy industrialization of preparation method, has been widely used for preparing white light LEDs at present.
Realize that the major way of white light has using fluorescent powder matching method：Blue chip+yellow fluorescent powder or blue chip+green emitting phosphor
Or yellow fluorescent powder+red fluorescence powder or ultraviolet chip+RGB (RGB fluorescent powder).Wherein blue chip+yellow fluorescent powder side
Formula can not meet the needs of high colour developing specular removal simultaneously since colour rendering index is too low；Therefore fluorescence is matched using single-chip at present
Powder realizes that white light is typically employed to 2 kinds or fluorescent powder of more than two kinds.Based on said program, certainly existed between fluorescent powder spectrum
Be overlapped coupling condition, mutual absorption is will produce between fluorescent powder in this case, for example the part light of green emitting phosphor be likely to by
Red fluorescence powder reabsorbs, and light efficiency is caused to decline phenomenon.Further, since thermally matched between LED chip and fluorescent powder differ greatly,
Under hot conditions, the quantum efficiency of fluorescent powder will necessarily decline, and can further influence LED encapsulation light efficiencies.
Invention content
The purpose of the present invention is the deficiencies for existing light-emitting diode packaging technology, it is proposed that a kind of light emitting diode envelope
Assembling structure and packaging method.
Technical scheme is as follows：
The present invention provides a kind of light-emitting diode encapsulation structure：Heat-radiating substrate, LED chip, the first fluorescent powder glue-line,
Second fluorescent powder glue-line, first buffer layer and second buffer layer；The LED chip is arranged on the heat-radiating substrate, the LED
First buffer layer, the first fluorescent powder glue-line, second buffer layer and the second phosphor powder layer are sequentially coated on chip, to form folder
Heart optical texture.
Preferably, the first filter layer is also coated between the first buffer layer and the LED chip；
Preferably, it is also coated with the second filter layer between the first fluorescent powder glue-line and second buffer layer.
Preferably, first filter layer is fluted body structure, and the first buffer layer and the first fluorescent powder glue-line are located at
In the groove of first filter layer；
Preferably, second filter layer is fluted body structure, and the second buffer layer and the first fluorescent powder glue-line are located at
In the groove of second filter layer.
Preferably, the thickness of the first buffer layer and the first fluorescent powder glue-line and it is less than or equal to first filter layer
The depth of groove.
Preferably, the thickness of the second buffer layer and the second fluorescent powder glue-line and it is less than or equal to second filter layer
The depth of groove.
Preferably, it is additionally provided with lens jacket on second phosphor powder layer.
Preferably, the sandwich optical texture is rectangular, round or regular polygon.
Preferably, the heat-radiating substrate is copper base, aluminum substrate or ceramic substrate；
Preferably, heat-radiating substrate is ceramic substrate；
Preferably, ceramic substrate is that AlN plates BN composite ceramic substrates.
Preferably, the LED chip is single ultraviolet chip or blue chip；
Preferably, ultraviolet chip peak band is 365~400nm, and blue chip peak band is 400~470nm.
Preferably, first phosphor powder layer is the mixture of silicon resin glue and red fluorescence powder；Second fluorescent powder
Layer is the mixture of silicon resin glue and green emitting phosphor or yellow fluorescent powder；The first buffer layer and second buffer layer are silicon tree
Fat glue or epoxide-resin glue；The first filter layer key reflections feux rouges, the second filter layer key reflections green light or yellow light.
Preferably, the red fluorescence powder emission peak wavelength is located at 610~660nm；The green emitting phosphor or yellow
Phosphor emission peak value is located at 510~540nm or 540~570nm.
Preferably, the first buffer layer and second buffer layer are silicon resin glue or epoxide-resin glue；
Preferably, the first buffer layer is silicon resin glue, and the second buffer layer is epoxide-resin glue.
Preferably, first filter layer is feux rouges filter coating；Second filter layer is that green light filter coating or yellow light are filtered
Light film.
Preferably, the first filter layer optical filtering ejected wave section is 580~780nm wave bands, the second filter layer optical filtering wave
Section is 510-560nm.
Preferably, the first buffer layer thickness is 50~100 μm, and the second buffer layer thickness is 10~50 μm.
The present invention provides also a kind of LED encapsulation method, including：LED chip is fixed on heat-radiating substrate；?
First buffer layer is coated in the LED chip；The first fluorescent powder glue-line is coated in the first buffer layer；It is glimmering described first
Second buffer layer is coated on light arogel layer；The second fluorescent powder glue-line is coated in the second buffer layer, to form sandwich light
Learn structure.
Compared with prior art, the invention has the advantages that：
1, it is all made of buffer layer transition between LED chip and fluorescent powder and between variety classes fluorescent powder, uses slow
Layer good heat conductivity is rushed, can effectively solve the problem that the high temperature thermal mismatching between chip and fluorescent powder leads to external quantum efficiency in fluorescent powder
Decline problem and LED component aging and color float problem.
2, fluorescent powder glue-line uses particular order painting method, and by adding specific wavelength filter layer, can effectively keep away
Exempt from mutual absorbing phenomenon between fluorescent powder, and light output can be concentrated, promotes light extraction efficiency.
Description of the drawings
It to describe the technical solutions in the embodiments of the present invention more clearly, below will be to needed in the embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for ability
For the those of ordinary skill of domain, without creative efforts, it can also be obtained according to these attached drawings other attached
Figure.
Fig. 1 is the rough schematic view of packaging method of the present invention.
Fig. 2 is the encapsulating structure schematic diagram of light emitting diode of the present invention.
Fig. 3 is the structural schematic diagram of heat-radiating substrate of the present invention.
Fig. 4 is the structural schematic diagram of filter layer of the present invention.
Fig. 5 is the light emitting diode encapsulation structure schematic diagram that the embodiment of the present invention 6 provides.
Fig. 6 is the light emitting diode encapsulation structure schematic diagram that comparative example 4 of the present invention provides.
Fig. 7 is the light-emitting diode encapsulation structure schematic diagram that comparative example 5 of the present invention provides.
Specific implementation mode
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that described herein, specific examples are only used to explain the present invention, not
For limiting the present invention.
The present invention provides a kind of light-emitting diode encapsulation structure, as shown in Fig. 2, including：Heat-radiating substrate (228), LED core
Piece (220), the first fluorescent powder glue-line (223), the second fluorescent powder glue-line (226), the first filter layer (221), first buffer layer
(222), specifically, the LED chip is arranged in institute for the second filter layer (224), second buffer layer (225) and lens jacket (227)
It states on heat-radiating substrate, the first filter layer, first buffer layer, the first fluorescent powder glue-line, second is sequentially coated in the LED chip
Filter layer, second buffer layer and the second phosphor powder layer, to form sandwich optical texture.
The specific packaging method of above-mentioned light-emitting diode encapsulation structure is：The LED chip is fixed on the substrate,
The first filter layer is coated above LED chip, first buffer layer is coated above first filter layer, in first buffer layer
The first fluorescent powder glue-line of side's coating, then coats the second filter layer above the first fluorescent powder glue-line, is applied on the second filter layer
Second buffer layer is covered, the second fluorescent powder glue-line is coated above second buffer layer, forms sandwich optical texture.
Outside light-emitting diode encapsulation structure divided by upper-part and material provided by the invention, further include：Elargol, holder, gold
Line or alloy wire etc., since these components or material are that parts or material are often used in LED technology field, in the present invention no longer in detail
Add description.
Preferably, above-mentioned sandwich optical texture is rectangular, round or regular polygon.Above-mentioned heat-radiating substrate is copper base, aluminium base
Plate or ceramic substrate；Further preferably aforesaid substrate is ceramic substrate；Further preferably above-mentioned ceramic substrate uses AlN tables
BN composite substrates are plated in face, and structural schematic diagram is as shown in figure 3, wherein 202 be AlN, and 208 be transition zone, and 210 be BN, the substrate
Longitudinal heat conduction and lateral thermal conductivity can be very excellent.Above-mentioned LED chip is ultraviolet chip or blue chip, preferably ultraviolet core
Piece peak band is 365~400nm, and blue chip peak band is 400~470nm.Above-mentioned first fluorescent powder glue-line is silicon
The mixture of resin glue and red fluorescence powder, the second phosphor powder layer are the mixed of silicon resin glue and green emitting phosphor or yellow fluorescent powder
Close object；The peak wavelength of red fluorescence powder, green emitting phosphor and yellow fluorescent powder is located at 610~660nm, 510~540nm
With 540~570nm.Above-mentioned first filter layer is feux rouges filter coating, and key reflections ejected wave section is 580~780nm, the second filter layer
For green light filter coating or yellow light filter coating, key reflections wave band is 510-560nm.Above-mentioned first buffer layer thickness is 50~100 μ
M, the second buffer layer thickness are 10~50 μm.
Preferably, first filter layer of the invention is fluted body structure, as shown in figure 4, the first buffer layer and first glimmering
Light arogel layer is located in the groove of the first filter layer；
Preferably, the thickness of the first buffer layer and the first fluorescent powder glue-line and less than the first filter layer groove
Depth.
Preferably, the thickness of the first buffer layer and the first fluorescent powder glue-line and the depth with the first filter layer groove
It spends equal, the thickness of the height of the cell wall of the first filter layer groove and first buffer layer and the first fluorescent powder glue-line and holds
It is flat.
Preferably, the second filter layer of the invention is fluted body structure, the second buffer layer and the first fluorescent powder glue-line position
In in the groove of the second filter layer.
Preferably, the thickness of the second buffer layer and the second fluorescent powder glue-line and it is less than or equal to second filter layer
The depth of groove.
Using the filter layer structure of " bowl-shape ", the side of the lower surface of fluorescent powder glue-line can be effectively surrounded, further
Avoid mutual absorbing phenomenon between fluorescent powder；Light concentration is exported upward simultaneously, luminescent properties is improved, light is avoided to be distributed from side
Caused by light loss, promoted light extraction efficiency.
The present invention also provides a kind of LED encapsulation method, specific schematic diagram is as shown in Figure 1.
Die bond：Above-mentioned one chip is fixed on the substrate by crystal-bonding adhesive, chip is UV LED chip or blue light
LED chip.
With glue：Red fluorescence powder and silica gel are made into the first fluorescent powder glue-line by a certain percentage；By green emitting phosphor or Huang
Color fluorescent powder and silica gel are made into the second fluorescent powder glue-line according to a certain percentage.
Coating：Apply one layer of feux rouges filter coating first on UV LED chip or blue-light LED chip, feux rouges filter coating is to it
Its light transmittance reaches 95% or more, it is therefore an objective to feux rouges after burst of ultraviolel be reflexed to upper layer or side layer, promote light extraction effect
Rate；Silicon resin glue or epoxide-resin glue are then coated with as first buffer layer, about 50~100 μm of the layer thickness of first buffer layer,
Purpose is that chip and fluorescent powder is avoided to be in direct contact, and forms heat-conducting buffer layer, first buffer layer is toasted 10-30 at 80~90 DEG C
Minute；Then the first fluorescent powder glue-line is coated above first buffer layer, 90~100 DEG C are toasted 10-30 minutes；Then first
One layer of green light filter coating or yellow light filter coating are applied on fluorescent powder glue-line, green light filter coating or yellow light filter coating are to other light transmittances
Reach 95% or more, it is therefore an objective to the excited green light of chip or yellow light filter to upper layer or side layer, on the one hand avoid emitted green
Light or yellow light are absorbed by red fluorescence powder, on the other hand improve light extraction efficiency；Then epoxy resin is coated on filter coating
Glue or epoxide-resin glue, 80~90 DEG C baking 10-30 minutes after form second buffer layer；Finally coated above second buffer layer
Second fluorescent powder glue-line, 90~100 DEG C are toasted 10-30 minutes, about 10~50 μm of second buffer layer thickness.
Molding：Spherical transparent glass is covered by injection molding or directly form lens on the outside of the fluorescent powder glue-line
Layer.
It should be noted that using the above-mentioned packaging method of the present invention, additionally it is possible to for other encapsulation in the present invention
In structure.
More effectively to illustrate technical scheme of the present invention, the technical side of the present invention is illustrated below by specific embodiment
Case.
Embodiment 1
The present embodiment packaging method is as shown in Figure 1, LED encapsulation structure schematic diagram is as shown in Figure 2.
Wherein heat-radiating substrate (228) be copper base, LED chip (220) be blue chip, peak wavelength be located at 450~
452nm, the first filter layer (221) are feux rouges filter coating, and first buffer layer (222) is silicon resin glue, the first fluorescent powder glue-line
(223) it is silica gel and nitride rouge and powder (peak wavelength：Mixture 625nm)；Second filter layer (224) is green light filter coating,
Second buffer layer (225) is silicon resin glue；Second fluorescent powder glue-line is the mixed of silica gel and aluminate green powder (peak wavelength 530nm)
Close object.
Embodiment 2
The packaging method and structure of the present embodiment are such as embodiment 1.
Wherein heat-radiating substrate (228) be AlN substrate, LED chip (220) be blue chip, peak wavelength be located at 450~
452nm, the first filter layer (221) are feux rouges filter coating, and first buffer layer (222) is silicon resin glue, the first fluorescent powder glue-line
(223) it is silica gel and nitride rouge and powder (peak wavelength：Mixture 625nm)；Second filter layer (224) is green light filter coating,
Second buffer layer (225) is silicon resin glue；Second fluorescent powder glue-line is the mixed of silica gel and aluminate green powder (peak wavelength 530nm)
Close object.
Embodiment 3
The packaging method and structure of the present embodiment are such as embodiment 1.
Wherein heat-radiating substrate (228) is AlN/BN composite substrates, and LED chip (220) is blue chip, and peak wavelength is located at
450~452nm, the first filter layer (221) are feux rouges filter coating, and first buffer layer (222) is silicon resin glue, the first phosphor gel
Layer (223) is silica gel and nitride rouge and powder (peak wavelength：Mixture 625nm)；Second filter layer (224) filters for green light
Film, second buffer layer (225) are silicon resin glue；Second fluorescent powder glue-line is silica gel and aluminate green powder (peak wavelength 530nm)
Mixture.
Embodiment 4
The packaging method and structure of the present embodiment are such as embodiment 1.
Wherein heat-radiating substrate (228) is AlN/BN composite substrates, and LED chip (220) is blue chip, and peak wavelength is located at
450~452nm, the first filter layer (221) are feux rouges filter coating, and first buffer layer (222) is epoxide-resin glue, the first fluorescent powder
Glue-line (223) is silica gel and nitride rouge and powder (peak wavelength：Mixture 625nm)；Second filter layer (224) filters for green light
Film, second buffer layer (225) are silicon resin glue；Second fluorescent powder glue-line is silica gel and aluminate green powder (peak wavelength 530nm)
Mixture.
Embodiment 5
The packaging method and structure of the present embodiment are such as embodiment 1.
Wherein heat-radiating substrate (228) is AlN/BN composite substrates, and LED chip (220) is blue chip, and peak wavelength is located at
450~452nm, the first filter layer (221) are feux rouges filter coating, and first buffer layer (222) is silicon resin glue, the first phosphor gel
Layer (223) is silica gel and nitride rouge and powder (peak wavelength：Mixture 625nm)；Second filter layer (224) filters for green light
Film, second buffer layer (225) are epoxide-resin glue；Second fluorescent powder glue-line is silica gel and aluminate green powder (peak wavelength
Mixture 530nm).
Embodiment 6
The present embodiment LED encapsulation structure schematic diagram is as shown in Figure 5.
Wherein heat-radiating substrate (228) is AlN/BN composite substrates, and LED chip (220) is blue chip, and peak wavelength is located at
450~452nm, the first filter layer (221) are feux rouges filter coating, and first buffer layer (222) is silicon resin glue, the first phosphor gel
Layer (223) is silica gel and nitride rouge and powder (peak wavelength：Mixture 625nm)；Second filter layer (224) filters for green light
Film, second buffer layer (225) are epoxide-resin glue；Second fluorescent powder glue-line is silica gel and aluminate green powder (peak wavelength
Mixture 530nm).
Wherein, the first filter layer is fluted body structure, and the first buffer layer and the first fluorescent powder glue-line are located at the first filter
In the groove of photosphere；Second filter layer is fluted body structure, and the second buffer layer and the first fluorescent powder glue-line are located at the second filter
In the groove of photosphere.
Comparative example 1
The packaging method and structure similar embodiment 5 of the present embodiment, are only the absence of the first filter layer (221).Use knot
Constitutive element part and material are equivalent with embodiment 5.
Comparative example 2
The packaging method and structure similar embodiment 5 of the present embodiment, are only the absence of the second filter layer (224).Use knot
Constitutive element part and material are equivalent with embodiment 5.
Comparative example 3
The packaging method and structure similar embodiment 5 of the present embodiment, are only the absence of the first filter layer (221).With the second filter
Photosphere (224).Used structural detail and material are equivalent with embodiment 5.
Comparative example 4
The raw material such as LED chip, heat-conducting substrate, silica gel, fluorescent powder, gold thread are equal with embodiment 5, encapsulating structure such as Fig. 6
It is shown.Wherein 100 be AlN/BN composite substrates, and 101 be LED blue chips, and 102 be the mixed of silica gel and green and red fluorescence powder
Close object.
Comparative example 5
The raw material such as LED chip, heat-conducting substrate, silica gel, fluorescent powder, gold thread are equal with embodiment 5, encapsulating structure such as Fig. 7
It is shown.Wherein 100 be AlN/BN composite substrates, and 101 be LED blue chips, and 102 be the mixed of silica gel and green and red fluorescence powder
Object is closed, 104 be buffer layer, and ingredient is equivalent with 5 first buffer layer of embodiment.
Table 1 is lighted photochromic data (5000K) for embodiment 1-6 and comparative example 1-5 and be can be seen that at ambient temperature
The light efficiency after lighting 1000h and 2000h using AlN/BN composite substrates relative to copper base or aluminum nitride ceramic substrate has
Apparent advantage, and color floats smaller；Due to the main isolating chip of first buffer layer and the first fluorescent adhesive layer, to heat conductivility
It is more demanding.And second buffer layer completely cuts off variety classes fluorescent powder, is not very high to heat conductivility requirement, but to light transmittance requirement
It is very high, directly decide the encapsulation light efficiency of device.Therefore silicones and epoxy is respectively adopted in first buffer layer and second buffer layer
The light efficiency that 1000h and 2000h was initially lighted, lighted to resin device in room temperature has apparent advantage.Comparative example 1-3 and reality
It applies example 5 to compare, illustrates that the first filter layer and the second filter layer directly affect the initial light effect and ageing properties of light emitting diode.
Meanwhile embodiment 5 and embodiment 6 further demonstrate that, middle the first filter layer and the second filter layer using fluted body structure, it can
It further increases initial light effect and slows down the problem of aging of light emitting diode, further improve performance.Comparative example 4 and comparison
Embodiment 5 corresponds to 5 encapsulated result of embodiment and shows the embodiment of the present invention by realizing fluorescent powder and chip isolation, difference
Initial light effect of the reflecting piece to light emitting diode, aging and the color drift performance phase of appropriate wave band are isolated and are added to type fluorescent powder
There is apparent advantage for the prior art.
Table 1 embodiment 1-6 and comparative example 1-5 lights photochromic data (5000K) at ambient temperature
In table, x, y indicate corresponding coordinate on CIE chromatograms；Ra indicates general display index.
It should be noted that, although term " first ", " second " etc. can be used for describing various elements herein, but this
A little elements should not be limited by these terms.These terms are only used for distinguishing an element with another element.For example,
In the case of the range for not departing from example embodiment, first element is referred to alternatively as second element, and similarly, second element can be claimed
For first element.As used herein, term "and/or" includes arbitrary combination and the institute of one or more related Listed Items
There is combination.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
All any modification, equivalent and improvement etc. made by within refreshing and principle should all include within protection scope of the present invention.
Claims (10)
1. a kind of light-emitting diode encapsulation structure, which is characterized in that including：Heat-radiating substrate, LED chip, the first fluorescent powder glue-line,
Second fluorescent powder glue-line, first buffer layer and second buffer layer；The LED chip is arranged on the heat-radiating substrate, the LED
First buffer layer, the first fluorescent powder glue-line, second buffer layer and the second phosphor powder layer are sequentially coated on chip, to form folder
Heart optical texture.
2. LED encapsulation structure according to claim 1, which is characterized in that the first buffer layer and the LED chip it
Between be also coated with the first filter layer；And/or
It is also coated with the second filter layer between the first fluorescent powder glue-line and second buffer layer.
3. LED encapsulation structure according to claim 2, which is characterized in that first filter layer is fluted body structure, institute
It states first buffer layer and the first fluorescent powder glue-line is located in the groove of the first filter layer；And/or
Second filter layer is fluted body structure, and the second buffer layer and the first fluorescent powder glue-line are located at the second filter layer
In groove.
4. LED encapsulation structure according to claim 1, which is characterized in that be additionally provided on second phosphor powder layer
Mirror layer.
5. LED encapsulation structure according to claim 1, which is characterized in that the heat-radiating substrate be copper base, aluminum substrate or
Ceramic substrate, wherein the ceramic substrate includes AlN plating BN composite ceramic substrates.
6. LED encapsulation structure according to claim 1, which is characterized in that the LED chip be single ultraviolet chip or
Blue chip.
7. LED encapsulation structure according to claim 1, which is characterized in that the first buffer layer is silicon resin glue or ring
Oxygen resin glue；The second buffer layer is silicon resin glue or epoxide-resin glue.
8. LED encapsulation structure according to claim 1, which is characterized in that first phosphor powder layer be silicon resin glue and
The mixture of red fluorescence powder；Second phosphor powder layer is the mixing of silicon resin glue and green emitting phosphor or yellow fluorescent powder
Object.
9. LED encapsulation structure according to claim 2 or 3, which is characterized in that first filter layer filters for feux rouges
Film；Second filter layer is green light filter coating or yellow light filter coating.
10. a kind of LED encapsulation method, which is characterized in that including：LED chip is fixed on heat-radiating substrate；Institute
It states and coats first buffer layer in LED chip；The first fluorescent powder glue-line is coated in the first buffer layer；In first fluorescence
Second buffer layer is coated on arogel layer；The second fluorescent powder glue-line is coated in the second buffer layer, to form sandwich optics
Structure.
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| PCT/CN2019/084583 WO2019242405A1 (en) | 2018-06-21 | 2019-04-26 | Light-emitting diode encapsulation structure and encapsulation method |
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| CN110391323A (en) * | 2019-08-06 | 2019-10-29 | 厦门多彩光电子科技有限公司 | A kind of packaging method and LED package of near ultraviolet full spectrum light effect |
| WO2019242405A1 (en) * | 2018-06-21 | 2019-12-26 | 旭宇光电（深圳）股份有限公司 | Light-emitting diode encapsulation structure and encapsulation method |
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| CN101212015A (en) * | 2006-12-26 | 2008-07-02 | 首尔半导体株式会社 | Light emitting device |
| CN101707232A (en) * | 2009-12-01 | 2010-05-12 | 桂林电子科技大学 | LED product and manufacture method thereof |
| CN102237477A (en) * | 2010-04-29 | 2011-11-09 | 财团法人工业技术研究院 | Multilayer stack-packaged light- emitting diode |
| CN102403429A (en) * | 2010-09-08 | 2012-04-04 | 株式会社东芝 | Light emitting device |
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| JP2017059756A (en) * | 2015-09-18 | 2017-03-23 | シチズン時計株式会社 | Light-emitting device |
| CN108807648B (en) * | 2018-06-21 | 2019-09-24 | 旭宇光电（深圳）股份有限公司 | A kind of light-emitting diode encapsulation structure and packaging method |
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| CN101212015A (en) * | 2006-12-26 | 2008-07-02 | 首尔半导体株式会社 | Light emitting device |
| CN101707232A (en) * | 2009-12-01 | 2010-05-12 | 桂林电子科技大学 | LED product and manufacture method thereof |
| CN102237477A (en) * | 2010-04-29 | 2011-11-09 | 财团法人工业技术研究院 | Multilayer stack-packaged light- emitting diode |
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| WO2019242405A1 (en) * | 2018-06-21 | 2019-12-26 | 旭宇光电（深圳）股份有限公司 | Light-emitting diode encapsulation structure and encapsulation method |
| CN110391323A (en) * | 2019-08-06 | 2019-10-29 | 厦门多彩光电子科技有限公司 | A kind of packaging method and LED package of near ultraviolet full spectrum light effect |
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| CN108807648B (en) | 2019-09-24 |
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