CN105810794A - LED packaging structure - Google Patents
LED packaging structure Download PDFInfo
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- CN105810794A CN105810794A CN201410851596.6A CN201410851596A CN105810794A CN 105810794 A CN105810794 A CN 105810794A CN 201410851596 A CN201410851596 A CN 201410851596A CN 105810794 A CN105810794 A CN 105810794A
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Abstract
The invention discloses an LED packaging structure. The LED packaging structure comprises a light emitting unit, an adhesive glue layer covering the light emitting unit, and a fluorescent glue layer covering the adhesive glue layer, wherein the refractive index of the adhesive glue layer is greater than the refractive index of the fluorescent glue layer. The LED packaging structure has the adhesive glue layer which has excellent adhesiveness and is between the light emitting unit and the fluorescent glue layer, so stability of the LED packaging structure can be improved, moreover, the refractive index of the adhesive glue layer is greater than the refractive index of the fluorescent glue layer, so a larger light extraction angle can be acquired, and the generated light source is more uniform.
Description
Technical field
The present invention relates to a kind of package structure for LED, particularly to the package structure for LED that a kind of packaging plastic interlayer refractive index is different.
Background technology
Light emitting diode (lightemittingdiode, LED) has that power consumption is low, component life length, need not warm up lamp time and the advantage such as response speed is fast., vibration resistance, applicable volume production little plus its volume, easy fit applications demand and make minimum or array element, therefore can be widely used for various application, for instance the light source of backlight module used by notebook computer, monitor, mobile phone, TV and liquid crystal display.Furthermore, along with the continuous lifting of technical field, having been developed that the High Power LED of high illumination briliancy at present, its luminous intensity has reached the degree of illumination.
In actual applications, LED wafer need to be placed on base plate for packaging and be packaged protecting LED wafer, it is common that cover LED wafer with fluorescent adhesive layer.The light that LED wafer produces will excite the fluorescent material in fluorescent adhesive layer, and make the electronics in fluorescent material rise to the excited state on high energy rank.When mental retardation rank are gone back in electron transition, energy radiates in the form of light.Utilize the principle of complementary coloured light, the light that luminescence unit and fluorescent adhesive layer produce is blended together various colorful in riotous profusion light.
But the adhesiveness between fluorescent adhesive layer and LED wafer is poor, the aqueous vapor in air, by LED wafer accurate for impact, makes CIE hue error value become big.For example, aqueous vapor easily enters between fluorescent adhesive layer and LED wafer, and expanded by heating makes fluorescent adhesive layer peel off when lighting, and now the reliability of package structure for LED is greatly reduced.Additionally, the light that LED wafer produces comparatively is concentrated, make illuminated object brightness bright especially.But outside light emitting region, then show obvious dark space.This strong comparison of light and shade is to cause dazzle chief reason, more can allow human physiology and doing not feel like oneself psychologically.Again, how allowing the light that LED wafer produces, such as blue light, the ratio sent uprises, and is also facing challenges in present stage R&D process.
Summary of the invention
Therefore, it is an object of the invention to open a kind of package structure for LED, be used for the adhesiveness increasing between fluorescent adhesive layer and LED wafer, and the lighting angle of LED wafer can be increased.
One aspect of the present invention provides the encapsulating structure of a kind of light emitting diode, comprises luminescence unit；Bonding glue-line, it covers this luminescence unit；And fluorescent adhesive layer, it covers this bonding glue-line, wherein bonds the refractive index refractive index more than fluorescent adhesive layer of glue-line.
According to one embodiment of the present invention, wherein having multiple bonding glue-line between fluorescent adhesive layer and luminescence unit, the refractive index of these bonding glue-lines is different.
According to one embodiment of the present invention, wherein bond the refractive index of glue-line between 1.5 to 1.7.
According to one embodiment of the present invention, wherein bonding glue-line is epoxy resin, phenyl silicon or its combination.
According to one embodiment of the present invention, wherein the refractive index of fluorescent adhesive layer is between 1.4 to 1.49.
According to one embodiment of the present invention, wherein fluorescent adhesive layer comprises silica gel and fluorescent material, and fluorescent material is scattered in silica gel.
According to one embodiment of the present invention, the wherein blue light-emitting diode wafer of luminescence unit to be luminescence band be 440nm to 475nm or ultraviolet light-emitting diodes wafer that luminescence band is 360nm to 400nm.
According to one embodiment of the present invention, wherein fluorescent material is yttrium aluminium garnet fluorescent powder (Y3Al5O12:Ce, YAG).
According to one embodiment of the present invention, wherein fluorescent adhesive layer has roughened surface.
According to one embodiment of the present invention, wherein roughened surface has photon crystal structure.
Package structure for LED provided by the invention have and luminescence unit and and fluorescent adhesive layer between the bonding glue-line of good adhesion, thus the stability of package structure for LED can be promoted.Additionally, the refractive index of bonding glue-line is more than fluorescent adhesive layer, and obtaining bigger rising angle, the light source of generation is more uniformly distributed.
Accompanying drawing explanation
For the above and other purpose of the present invention, feature, advantage and embodiment can be become apparent, the detailed description of appended accompanying drawing is as follows:
Fig. 1 is the profile of a kind of LED wafer according to some embodiments of the present invention.
Fig. 2 is the profile of a kind of package structure for LED according to some embodiments of the present invention.
Fig. 3 is the profile of a kind of package structure for LED according to other some embodiments of the present invention.
Fig. 4 is the profile of a kind of package structure for LED according to other some embodiments of the present invention.
Fig. 5 is the profile of a kind of package structure for LED according to other some embodiments of the present invention.
Fig. 6 is the preparation method flow chart of a kind of package structure for LED according to some embodiments of the present invention.
Detailed description of the invention
In order to the narration making present disclosure is more detailed in complete, enforcement aspect and the specific embodiment of the present invention is described below in reference to accompanying drawing；But this not implements or uses the unique forms of the specific embodiment of the invention.Each embodiment disclosed below, can be mutually combined or replace useful when, it is possible to adds other embodiment in an embodiment, and need not further record or illustrate.
Refer to the profile that Fig. 1, Fig. 1 are a kind of LED wafer according to some embodiments of the present invention.As it is shown in figure 1, LED wafer 100 comprises: substrate 110 and light emitting diode epitaxial layer 120 are positioned at above substrate 110, wherein substrate 110 is sapphire substrate, silicon carbide substrate, gallium nitride base board or glass substrate.
Light emitting diode epitaxial layer 120 respectively n-type semiconductor layer 122 from the bottom to top；Luminescent layer 124；And p-type semiconductor layer 126.When adding forward bias voltage drop, most carrier electricity holes of p-type semiconductor layer 126 can be moved toward n-type semiconductor layer 122 direction；Most carrier electrons of n-type semiconductor layer 122 then move toward p-type semiconductor layer 126 direction.Electrons and holes in the exhaustion region compound of p-n junction, now electronics by conduct band be passed to after valency electricity band to lose can rank, and produce light with form of photons released energy.Wherein, p-n junction is luminescent layer 124.
Light emitting diode epitaxial layer 120, arranged above with p-type electrode 130 and n-type electrode 140, is respectively and electrically connected to p-type semiconductor layer 126 and n-type semiconductor layer 122.Reflection layer 150 is coated with luminescent layer 124, p-type semiconductor layer 126 and p-type electrode 130, and wherein reflection layer 150 can change the course of the light produced by luminescent layer 124, makes light be gone out light by substrate 110.
In the section Example of the present invention, wherein reflection layer 150 is comprehensive reflecting layer, and it interlocks with the sub-reflecting layer of two kinds of different refractivities and is stacked formation.The material in the sub-reflecting layer of two kinds of different refractivities can be titanium oxide/silicon oxide, alumina/silica or nitrogenize silicon/oxidative silicon.
In other section Example of the present invention, wherein reflection layer is aluminium lamination or silver layer.
Two metal coupling 160a and 160b are then respectively and electrically connected to p-type electrode 130 and n-type electrode 140, and it is linked to outer member when encapsulation, makes light emitting diode construction 100 work.By reflection layer 150, the light that luminescent layer 124 produces is entered in air by substrate 110, it is to avoid metal coupling 160a and 160b covers the light loss of generation.
Please continue to refer to the profile that Fig. 2, Fig. 2 are a kind of package structure for LED according to some embodiments of the present invention.As in figure 2 it is shown, package structure for LED 200 comprises luminescence unit 210, luminescence unit 210 is the LED wafer 100 shown in Fig. 1, and it encapsulates in flip mode.In other section Example of the present invention, luminescence unit can be non-flip chip type LED wafer.Bonding glue-line 220 covers luminescence unit 210, and fluorescent adhesive layer 230 covers bonding glue-line 220.
Owing to the adhesiveness between fluorescent adhesive layer 230 and luminescence unit 210 is not good, water in air gas can affect the LED wafer of precision.When producing light, fluorescent adhesive layer 230 easily peels off because of flatulence of heat type effect, makes the reliability of package structure for LED 200 be greatly reduced, and makes CIE hue error value become big.Accordingly, select and luminescence unit 210 and and fluorescent adhesive layer 230 between be respectively provided with the bonding glue-line 220 of good adhesion, promote the stability of package structure for LED 200.
Wherein, the refractive index refractive index more than fluorescent adhesive layer 230 of glue-line 220 is bonded.The light that luminescence unit 210 produces, when passing through the contact surface bonding glue-line 220 and fluorescent adhesive layer 230, can produce refraction effect.Owing to the refractive index of fluorescent adhesive layer 230 is less than bonding glue-line 220, light is meeting off-normal when by contact surface so that lighting angle becomes big.Bigger lighting angle represents that light irradiates more without dead angle, reaches illumination evenly, the ratio that light sends more can be made to uprise, and it has preferably application.
Wherein, bonding glue-line 220 selects refractive index transparent material between 1.5 to 1.7, such as epoxy resin, phenyl silicon or its combination.The refractive index of fluorescent adhesive layer 230 is then between 1.4 to 1.49, and wherein fluorescent adhesive layer 230 comprises silica gel and fluorescent material is scattered in silica gel.
In the section Example of the present invention, luminescence unit 210 is blue light-emitting diode wafer (luminescence band 440nm-475nm), red light-emitting diode wafer (luminescence band 610nm-660nm), green light LED wafer (luminescence band 500nm-535nm), succinum light-emitting diode wafer (luminescence band 580nm-600nm) or ultraviolet light-emitting diodes wafer (luminescence band 360nm-400nm).In the section Example of the present invention, fluorescent material is yellow fluorescent powder, green light fluorescent powder, red light fluorescent powder or its combination.
In the section Example of the present invention, luminescence unit 210 is blue light-emitting diode wafer or ultraviolet light-emitting diodes wafer, and fluorescent material is yellow fluorescent powder.The gold-tinted that blue light or ultraviolet light and fluorescent material produce after exciting forms white light after blending together, and wherein yellow fluorescent powder is yttrium aluminium garnet fluorescent powder (Y3Al5O12:Ce, YAG).
In the section Example of the present invention, there is multiple bonding glue-line between fluorescent adhesive layer 230 and luminescence unit 210, and the refractive index of these bonding glue-lines is different.
Refer to the profile that Fig. 3, Fig. 3 are a kind of package structure for LED according to other some embodiments of the present invention.As it is shown on figure 3, package structure for LED 300 comprises luminescence unit 310, luminescence unit 310 is the LED wafer 100 shown in Fig. 1, and it encapsulates in flip mode.In other section Example of the present invention, luminescence unit can be non-flip chip type LED wafer.Bonding glue-line 320 covers luminescence unit 310, and fluorescent adhesive layer 330 covers bonding glue-line 320.
Bonding glue-line 320, because being respectively provided with good adhesion between luminescence unit 310 and fluorescent adhesive layer 330, therefore can promote the stability of package structure for LED 300.
Additionally, bonding glue-line 320 is different from the refractive index of fluorescent adhesive layer 330, the light that luminescence unit 310 produces, when passing through the contact surface bonding glue-line 320 and fluorescent adhesive layer 330, can produce refraction effect.Owing to the refractive index of fluorescent adhesive layer 330 is less than bonding glue-line 320, light is meeting off-normal when by contact surface so that lighting angle becomes big and reaches illumination evenly.Additionally, more can make light, such as blue light, the ratio sent uprises.
Fluorescent adhesive layer 330 has more roughened surface 332, because between fluorescent adhesive layer 330 and air, refractive index difference is big, causes easily producing when light is entered air by fluorescent adhesive layer 330 total reflection, light extraction yield is greatly reduced.Roughened surface 332 then can destroy and reduce the chance producing total reflection when light enters air from fluorescent adhesive layer 330, guides light to enter in air to increase light extraction yield, makes the ratio that light sends uprise further.Wherein, the upper surface of fluorescent adhesive layer 330 is imprinted or the mode of lithography is to obtain roughened surface 332.In the section Example of the present invention, impressing can use hot pressing or mode of colding pressing to form roughened surface 332.
Referring to Fig. 4, Fig. 4 is a kind of package structure for LED sectional view according to other some embodiments of the present invention.As shown in Figure 4, package structure for LED 400 comprises luminescence unit 410, and luminescence unit 410 is the LED wafer 100 shown in Fig. 1, and it encapsulates in flip mode.In other section Example of the present invention, luminescence unit can be non-flip chip type LED wafer.Bonding glue-line 420 covers luminescence unit 410, and fluorescent adhesive layer 430 covers bonding glue-line 420.
Fluorescent adhesive layer 430 has roughened surface 432, and this roughened surface 432 has periodic concaveconvex structure, generally also referred to as photonic crystal.Photonic crystal can revise the angle of incident ray, and when angle of incidence is less than critical angle, light can enter in air by fluorescent adhesive layer 430, chance that total reflection occur is greatly decreased, and promotes light extraction yield, make the ratio that light sends uprise.Wherein, the upper surface of fluorescent adhesive layer 430 is imprinted or the mode of lithography is to obtain roughened surface 432.In the section Example of the present invention, impressing can use hot pressing or mode of colding pressing to form roughened surface 432.
It is a kind of package structure for LED sectional view according to other some embodiments of the present invention please continue to refer to Fig. 5, Fig. 5.As it is shown in figure 5, package structure for LED 500 comprises luminescence unit 510, luminescence unit 510 is the LED wafer 100 shown in Fig. 1, and it encapsulates in flip mode.In other section Example of the present invention, luminescence unit 510 can be non-flip chip type LED wafer.Bonding glue-line 520 covers luminescence unit 510, and fluorescent adhesive layer 530 covers bonding glue-line 520.
The contact surface of bonding glue-line 520 and fluorescent adhesive layer 530 has roughened surface 522, roughened surface 522 can destroy or reduce the chance producing total reflection when light enters fluorescent adhesive layer 530 from bonding glue-line 520, and direct light can enter fluorescent adhesive layer 530 and increase lighting angle, what further increase light goes out light ratio.Wherein, the upper surface of bonding glue-line 520 is imprinted or the mode of lithography is to obtain roughened surface 522.In the section Example of the present invention, impressing can use hot pressing or mode of colding pressing to form roughened surface 522.
In the section Example of the present invention, roughened surface 522 is the photonic crystal with periodically concaveconvex structure.
In other section Example of the present invention, the upper surface of fluorescent adhesive layer 530 is also roughened surface, and it can direct light be entered in air by fluorescent adhesive layer 530 to increase light extraction yield.In other section Example of the present invention, the roughened surface of fluorescent adhesive layer 530 is the photonic crystal with periodically concaveconvex structure.
Fig. 6 is the preparation method flow chart of the package structure for LED 200 according to some embodiments of the present invention.Please referring initially to step 610, first providing luminescence unit 210, luminescence unit 210 is the LED wafer 100 shown in Fig. 1, and it encapsulates in flip mode.
Then performing step 620, some glue makes adhesive glue cover luminescence unit 210, and forms bonding glue-line 220.Bonding glue-line 220 selects refractive index transparent material between 1.5 to 1.7, such as epoxy resin, phenyl silicon or its combination.
Finally performing step 630, some glue makes fluorescent glue cover luminescence unit 210, and forms fluorescent adhesive layer 230, and wherein the refractive index of fluorescent adhesive layer 230 is less than the refractive index of bonding glue-line 220.The refractive index of fluorescent adhesive layer 230 is then between 1.4 to 1.49, and wherein fluorescent adhesive layer 230 comprises silica gel and fluorescent material, and fluorescent material is scattered in silica gel.
In the section Example of the present invention, luminescence unit 210 is blue light-emitting diode wafer (luminescence band 440nm-475nm), red light-emitting diode wafer (luminescence band 610nm-660nm), green light LED wafer (luminescence band 500nm-535nm), succinum light-emitting diode wafer (luminescence band 580nm-600nm) or ultraviolet light-emitting diodes wafer (luminescence band 360nm-400nm).In the section Example of the present invention, fluorescent material is, yellow fluorescent powder, green light fluorescent powder, red light fluorescent powder or its combination.
In the section Example of the present invention, luminescence unit 210 is blue light-emitting diode wafer or ultraviolet light-emitting diodes wafer, and fluorescent material is yellow fluorescent powder.The gold-tinted that blue light or ultraviolet light and fluorescent material produce after exciting forms white light after blending together, and wherein yellow fluorescent powder is yttrium aluminium garnet fluorescent powder (Y3Al5O12:Ce, YAG).
By the invention described above embodiment it can be seen that the present invention has following advantages.Package structure for LED disclosed in this invention has bonding glue-line, itself and luminescence unit and and fluorescent adhesive layer between good adhesion, thus the stability of package structure for LED can be promoted, make fluorescent adhesive layer peel off when being not easy to work.Additionally, the refractive index of bonding glue-line is more than fluorescent adhesive layer.Producing to disperse when light is by the medium that the medium entrance refractive index that refractive index is big is little, and can obtain bigger rising angle, the light source of generation is more uniformly distributed.
On the other hand, more can to the surface of fluorescent adhesive layer, or the contact surface of fluorescent adhesive layer and adhesive glue interlayer carries out imprinting or lithography is to obtain roughened surface.Roughened surface can destroy and reduce the chance producing total reflection when light enters different medium, makes most light can be entered air by package structure for LED, light extraction yield is significantly increased.
Although the present invention is with embodiment openly as above; so it is not for limiting the present invention, any those skilled in the art, without departing from the spirit and scope of the present invention; can doing various different selection and amendment, therefore protection scope of the present invention is limited by claims and equivalents thereof.
Claims (10)
1. a package structure for LED, it is characterised in that described package structure for LED comprises:
Luminescence unit；
Bonding glue-line, it covers described luminescence unit；And
Fluorescent adhesive layer, it covers described bonding glue-line, and the refractive index of wherein said bonding glue-line is more than the refractive index of described fluorescent adhesive layer.
2. package structure for LED as claimed in claim 1, it is characterised in that having multiple bonding glue-line between described fluorescent adhesive layer and described luminescence unit, the refractive index of the plurality of bonding glue-line is different.
3. package structure for LED as claimed in claim 1, it is characterised in that the refractive index of described bonding glue-line is between 1.5 to 1.7.
4. package structure for LED as claimed in claim 3, it is characterised in that described bonding glue-line is epoxy resin, phenyl silicon or its combination.
5. package structure for LED as claimed in claim 1, it is characterised in that the refractive index of described fluorescent adhesive layer is between 1.4 to 1.49.
6. package structure for LED as claimed in claim 5, it is characterised in that described fluorescent adhesive layer comprises silica gel and fluorescent material, and described fluorescent material is scattered in described silica gel.
7. package structure for LED as claimed in claim 6, it is characterised in that described luminescence unit is luminescence band is the blue light-emitting diode wafer of 440nm to 475nm or ultraviolet light-emitting diodes wafer that luminescence band is 360nm to 400nm.
8. the package structure for LED as described in claim 7, it is characterised in that described fluorescent material is yttrium aluminium garnet fluorescent powder (Y3Al5O12:Ce,YAG)。
9. package structure for LED as claimed in claim 1, it is characterised in that described fluorescent adhesive layer has roughened surface.
10. package structure for LED as claimed in claim 9, it is characterised in that described roughened surface has photon crystal structure.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410851596.6A CN105810794A (en) | 2014-12-31 | 2014-12-31 | LED packaging structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410851596.6A CN105810794A (en) | 2014-12-31 | 2014-12-31 | LED packaging structure |
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| CN105810794A true CN105810794A (en) | 2016-07-27 |
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| CN201410851596.6A Pending CN105810794A (en) | 2014-12-31 | 2014-12-31 | LED packaging structure |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106784250A (en) * | 2017-01-05 | 2017-05-31 | 芜湖聚飞光电科技有限公司 | A kind of controllable chip-scale LED packagings of lighting angle and packaging technology |
| CN111916534A (en) * | 2019-05-07 | 2020-11-10 | 錼创显示科技股份有限公司 | Micro-element |
| US11322669B2 (en) | 2018-12-21 | 2022-05-03 | Lumileds Llc | Color uniformity in converted light emitting diode using nano-structures |
| US11362239B2 (en) | 2019-05-07 | 2022-06-14 | PlayNitride Display Co., Ltd. | Micro device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101202321A (en) * | 2006-12-11 | 2008-06-18 | 株式会社日立显示器 | Illumination device and display device incorporating the same |
| CN101651177A (en) * | 2008-08-11 | 2010-02-17 | 旭丽电子(广州)有限公司 | Photoelectric semiconductor device capable of generating uniform polychromatic light |
| CN102456808A (en) * | 2010-10-26 | 2012-05-16 | 鸿富锦精密工业（深圳）有限公司 | Light-emitting diode packaging structure |
| CN204927325U (en) * | 2014-12-31 | 2015-12-30 | 萨摩亚商天兆有限公司 | Light -emitting diode packaging structure |
-
2014
- 2014-12-31 CN CN201410851596.6A patent/CN105810794A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101202321A (en) * | 2006-12-11 | 2008-06-18 | 株式会社日立显示器 | Illumination device and display device incorporating the same |
| CN101651177A (en) * | 2008-08-11 | 2010-02-17 | 旭丽电子(广州)有限公司 | Photoelectric semiconductor device capable of generating uniform polychromatic light |
| CN102456808A (en) * | 2010-10-26 | 2012-05-16 | 鸿富锦精密工业（深圳）有限公司 | Light-emitting diode packaging structure |
| CN204927325U (en) * | 2014-12-31 | 2015-12-30 | 萨摩亚商天兆有限公司 | Light -emitting diode packaging structure |
Non-Patent Citations (1)
| Title |
|---|
| 余仁勇等: "LED梯度折射率封装结构的蒙特卡罗模拟", 《光子学报》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106784250A (en) * | 2017-01-05 | 2017-05-31 | 芜湖聚飞光电科技有限公司 | A kind of controllable chip-scale LED packagings of lighting angle and packaging technology |
| US11322669B2 (en) | 2018-12-21 | 2022-05-03 | Lumileds Llc | Color uniformity in converted light emitting diode using nano-structures |
| US11870023B2 (en) | 2018-12-21 | 2024-01-09 | Lumileds Llc | Color uniformity in converted light emitting diode using nano-structures |
| CN111916534A (en) * | 2019-05-07 | 2020-11-10 | 錼创显示科技股份有限公司 | Micro-element |
| US11362239B2 (en) | 2019-05-07 | 2022-06-14 | PlayNitride Display Co., Ltd. | Micro device |
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Application publication date: 20160727 |