CN106784250A - A kind of controllable chip-scale LED packagings of lighting angle and packaging technology - Google Patents
A kind of controllable chip-scale LED packagings of lighting angle and packaging technology Download PDFInfo
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- CN106784250A CN106784250A CN201710007639.6A CN201710007639A CN106784250A CN 106784250 A CN106784250 A CN 106784250A CN 201710007639 A CN201710007639 A CN 201710007639A CN 106784250 A CN106784250 A CN 106784250A
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 63
- 238000012536 packaging technology Methods 0.000 title claims abstract description 12
- 238000009792 diffusion process Methods 0.000 claims abstract description 89
- 239000010410 layer Substances 0.000 claims abstract description 89
- 239000012790 adhesive layer Substances 0.000 claims abstract description 50
- 239000000843 powder Substances 0.000 claims abstract description 43
- 239000003292 glue Substances 0.000 claims abstract description 30
- 239000004033 plastic Substances 0.000 claims abstract description 29
- 229920003023 plastic Polymers 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims description 48
- 238000000465 moulding Methods 0.000 claims description 26
- 229910052594 sapphire Inorganic materials 0.000 claims description 24
- 239000010980 sapphire Substances 0.000 claims description 24
- 239000011265 semifinished product Substances 0.000 claims description 15
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 10
- 239000000853 adhesive Substances 0.000 claims description 8
- 230000001070 adhesive effect Effects 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 229920001296 polysiloxane Polymers 0.000 claims description 7
- -1 polysiloxanes Polymers 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000004070 electrodeposition Methods 0.000 claims description 5
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 claims description 5
- 239000002994 raw material Substances 0.000 claims description 5
- 238000002310 reflectometry Methods 0.000 claims description 5
- 239000000741 silica gel Substances 0.000 claims description 5
- 229910002027 silica gel Inorganic materials 0.000 claims description 5
- 239000004408 titanium dioxide Substances 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 239000003822 epoxy resin Substances 0.000 claims description 2
- PARWUHTVGZSQPD-UHFFFAOYSA-N phenylsilane Chemical compound [SiH3]C1=CC=CC=C1 PARWUHTVGZSQPD-UHFFFAOYSA-N 0.000 claims description 2
- 229920000647 polyepoxide Polymers 0.000 claims description 2
- 229920002635 polyurethane Polymers 0.000 claims description 2
- 239000004814 polyurethane Substances 0.000 claims description 2
- 238000003825 pressing Methods 0.000 claims description 2
- XUBKPYAWPSXPDZ-UHFFFAOYSA-N [Ba].OS(O)(=O)=O Chemical compound [Ba].OS(O)(=O)=O XUBKPYAWPSXPDZ-UHFFFAOYSA-N 0.000 claims 1
- 238000000605 extraction Methods 0.000 abstract description 9
- 238000013461 design Methods 0.000 abstract description 4
- 230000004907 flux Effects 0.000 abstract description 4
- 230000000630 rising effect Effects 0.000 abstract description 2
- 238000010276 construction Methods 0.000 abstract 1
- 238000005538 encapsulation Methods 0.000 description 13
- 239000000047 product Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 230000005012 migration Effects 0.000 description 5
- 238000013508 migration Methods 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 229910052691 Erbium Inorganic materials 0.000 description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000000084 colloidal system Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000012467 final product Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000008187 granular material Substances 0.000 description 3
- 238000004643 material aging Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000012856 packing Methods 0.000 description 3
- 238000000197 pyrolysis Methods 0.000 description 3
- 230000007480 spreading Effects 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 241001062009 Indigofera Species 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- 239000006071 cream Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000004224 protection Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a kind of controllable chip-scale LED packagings of lighting angle and packaging technology, the LED packagings set the first white wall glue-line as reflecting surface in the side of LED chip, diffusion layer, fluorescent adhesive layer, for the requirement of different rising angles, reflecting surface of different shapes can be designed, the controllable chip-scale LED packagings of lighting angle are obtained；In addition, diffusion layer is set between LED chip and fluorescent adhesive layer, diffusion layer has the refractive index higher than fluorescent glue, LED chip is reduced with the refringence of fluorescent adhesive layer away from the refractive index of three has certain gradient, improves the light extraction efficiency of LED chip, and then improve the luminous flux of device, because the spread powder in diffusion layer is different with the refractive index of packaging plastic, the uneven situation of LED chip blue light light extraction can be improved, so as to improve the spatial color uniformity of device；The design of the white wall construction of groove significantly improves product reliability problem.
Description
Technical field
The invention belongs to LED encapsulation technologies field, it is related to a kind of chip-scale LED packagings, relates in particular to one kind
The controllable chip-scale LED packagings of lighting angle and packaging technology.
Background technology
In recent years, under the trend of global energy-saving and emission-reduction, LED light source has obtained swift and violent development, LED light source and traditional light
Source is compared, and has the advantages that long lifespan, small volume, efficiency high, fast response time, antidetonation, energy-conservation, pollution-free, is a kind of " green
Light source ", LED light source certainly will obtain large-scale application.
In the production technology of LED light source, encapsulation is a key link formed a connecting link, and it is hair that the effect of encapsulation is
Optical chip provides enough protections, prevents chip from exposing for a long time in atmosphere aging or being failed by mechanical injuries, while
Also should ensure that the light source after encapsulation has good light extraction efficiency and good thermal diffusivity.The conventional package of LED is first by core
Piece is fixed on substrate, then realizes packaging technology to chip on substrate, the LED component formed using this packaging technology,
On the one hand, in encapsulation process, chip it is possible that mobile phenomenon, causes the positional precision of chip package not high, and
The electric conductivity of chip and substrate is also affected, on the other hand, the thickness evenness of packaging plastic is difficult to control to, also has to light extraction
Certain influence.
With the appearance of flip-chip, research staff gradually develops a kind of chip-scale encapsulation technology (CSP LED；
Chip Scale Package LED), it is to be provided with electrode in die bottom surface, directly sealed on the upper surface of chip and side encapsulation
Dress colloid, exposes the electrode of bottom surface, because this encapsulating structure has no support or substrate, it is possible to decrease packaging cost, and can
The encapsulation of individual devices is set to simplify, minimize, Material Cost is low, production capacity is big.
Current flip chip type class encapsulation structure is mainly following structure：Sapphire chip has positive and negative electrode, directly exists
Chip upper surface (and side encapsulation fluorescent colloid, expose the electrode of chip.It is luminous that there are the following problems for this structure (1)
Angle is big, is unfavorable for the design of secondary optics, and during secondary optical design, the extraction yield of light is relatively relatively low；(2) fluorescent material is impermeable
Bright micron order solid particle, is mixed in glue, with chip surface contact position, around fluorescent powder grain easily formed bubble, shadow
The bonding force of glue-line and chip is rung, fluorescent powder grain has the extraction yield of back reflection effect, influence blue light and fluorescence to light, reduces
Light extraction efficiency；The general 1.4-1.54 of glue refractive index in fluorescent glue, and LED chip sapphire refractive index 1.78, both reflect
Rate difference is larger, the full transmitting of light is easily caused, so as to reduce the luminous efficiency of device.(3) due to chip sides and positive
Amount of light is inconsistent, and it is flux matched bad with luminous energy in crystal covered chip all directions to be easily caused the thickness of fluorescent adhesive layer, easily
There is the photochromic non-uniform phenomenon in space.
In addition in application end, wafer-level package device would generally realize electrical communication using some brazing metals, such as tin cream,
Elargol etc..When using tin cream, the residual of scaling powder can influence the optical color parameter and its reliability of device；And use elargol conduct
During solder, device is for a long time when using, silver ion, in the two ends generation silver whiskers of electrode gap, easily goes out along sense of current migration
Existing shorted devices, very big hidden danger is brought to the reliability of product.
The content of the invention
Therefore, the present invention will exactly solve above-mentioned technical problem, so as to propose that a kind of lighting angle is adjustable, be difficult at chip
Produce bubble, photochromic uniform and be difficult the controllable chip-scale LED packagings of the excellent lighting angle of short circuit, reliability and encapsulation
Technique.
In order to solve the above technical problems, the technical scheme is that：
The present invention provides a kind of lighting angle controllable chip-scale LED packagings, and it includes that bottom surface is provided with the indigo plant of electrode
Jewel LED chip, the electrode is made up of positive pole and negative pole, has space between the positive pole and negative pole, the LED chip
Top and side are provided with diffusion layer, and the diffusion layer top is provided with fluorescent adhesive layer, the LED chip, diffusion layer, fluorescent glue
The side of layer is provided with the first white wall glue-line, the refractive index of the sapphire refractive index more than the diffusion layer of the LED chip, institute
State the refractive index of the refractive index more than the fluorescent adhesive layer of diffusion layer.
Preferably, being provided with the second white wall glue-line, the second white wall glue in space between the positive pole and negative pole
Layer bottom has to the extension extended away from the electrode direction, the extension bottom surface and the described first white wall glue-line bottom surface
Concordantly.
Preferably, the surface configuration that the first white wall glue-line is in contact with the diffusion layer, fluorescence coating is plane, throws
Object plane or ellipsoid.
Preferably, the thickness of the extension is 1-200 μm.
Preferably, the LED chip is sapphire chip, refractive index is 1.78, and the refractive index of the diffusion layer is
1.3-1.7, the refractive index of the fluorescent adhesive layer is 1.29-1.69.
Preferably, the diffusion layer is mixed to prepare by spread powder with packaging plastic, the thickness of the diffusion layer is 1-1000 μ
m。
Preferably, the fluorescent adhesive layer is mixed to prepare by rear-earth-doped inorganic fluorescent powder and packaging plastic, thickness is 1-
1000μm。
Preferably, the spread powder is at least one in methyl-monosilane, phenyl silane, polysiloxanes；The encapsulation
Glue is silica gel, silicones, epoxy resin or polyurethane；The first white wall glue-line, the reflectivity of the second white wall glue-line are not less than
95%, material is titanium dioxide or barium sulfate.
The present invention also provides a kind of packaging technology of the controllable chip-scale LED packagings of lighting angle, it is characterised in that
Comprise the following steps：
S1, die bond, exotic material surface is fixed on by sapphire LED chip by crystal-bonding adhesive；
S2, according to mass ratio 0.1-1:1 by rear-earth-doped inorganic fluorescent powder and packaging plastic mixed preparing fluorescent glue, according to
Mass ratio 0.1-1:Spread powder and packaging plastic are prepared diffusion layer raw material by 1；
S3, on the semi-finished product that the step S1 is obtained be molded diffusion layer, fluorescent adhesive layer is molded at the top of diffusion layer；
S4, unnecessary diffusion layer and fluorescent adhesive layer are removed according to the shape of the default first white wall glue-line；
S5, by the semi-finished product obtained by the step S4, be transferred to another exotic material surface, the exotic material
The electrode position of the surface correspondence sapphire LED chip is provided with the boss that height is for 1-200 μm；
S6：The first white adhesive layer and the second white adhesive layer are molded on the semi-finished product that the step S5 is obtained；
S7, baking-curing.
Preferably, the mold pressing procedure described in step S3, S6, molding temperature is 80-150 DEG C, and molding pressure is
15-120kgf/m2, clamp time is 2-10min；In the step S7, the baking temperature of the baking-curing is 100-150
DEG C, baking time is 2-5h.
Above-mentioned technical proposal of the invention has advantages below compared to existing technology：
(1) the controllable chip-scale LED packagings of lighting angle of the present invention, it includes that bottom surface is provided with the indigo plant of electrode
Jewel LED chip, the electrode is made up of positive pole and negative pole, has space between the positive pole and negative pole, the LED chip
Top and side are provided with diffusion layer, and the diffusion layer top is provided with fluorescent adhesive layer, the LED chip, diffusion layer, fluorescent glue
The side of layer is provided with the first white wall glue-line, the refractive index of the sapphire refractive index more than the diffusion layer of the LED chip, institute
State the refractive index of the refractive index more than the fluorescent adhesive layer of diffusion layer.The LED packagings are in LED chip, diffusion layer, fluorescence
The side of glue-line sets the first white wall glue-line as reflecting surface, for the requirement of different rising angles, can design different shape
Reflecting surface, obtain with the controllable chip-scale LED packagings of different lighting angles, lighting angle；In addition, in LED chip
Diffusion layer is set and fluorescent adhesive layer between, and the diffusion layer has the refractive index higher than fluorescent glue, reduces LED chip and fluorescence
The refringence of glue-line is away from the refractive index of three has certain gradient, reduces back reflection effect of the fluorescent adhesive layer to light, improves
The light extraction efficiency of LED chip, and then the luminous flux of device is improve, due to the refraction of spread powder and packaging plastic in diffusion layer
Rate is different, has certain scattering process to light, can improve light extraction uneven (chip top is different with side light emission measure)
Situation, improves the spatially uniform of device, it is thus also avoided that fluorescent adhesive layer is directly contacted with luminescence chip, produce gas around fluorescent material
The problem of bubble.
(2) the controllable chip-scale LED packagings of lighting angle of the present invention, the sky between the positive pole and negative pole
The second white wall glue-line is provided with gap, the second white wall glue-line bottom has to the extension extended away from the electrode direction
Portion, the extension bottom surface is concordant with the described first white wall glue-line bottom surface.The setting of the second white wall glue-line and extension can have
Effect prevents the silver whiskers that silver ion migration is produced, and has prevented the short circuit between chip positive and negative electrode；The setting of extension is reduced and helped
The diffusion area of solder flux, reduces influence of the scaling powder to properties of product, improves the reliability of product；Chip bottom is anti-simultaneously
The filling of material is penetrated, the mechanical performance of chip is also improved, reduced because of the risk of the chip rupture that coefficient of expansion difference causes,
Improve the matching of chip and substrate.
Brief description of the drawings
In order that present disclosure is more likely to be clearly understood, below according to specific embodiment of the invention and combine
Accompanying drawing, the present invention is further detailed explanation, wherein
Fig. 1 is the controllable chip-scale LED packaging structural representations of lighting angle described in the embodiment of the present invention 1；
Fig. 2 is the controllable chip-scale LED packaging structural representations of lighting angle described in the embodiment of the present invention 2；
Fig. 3 is the controllable chip-scale LED packaging structural representations of lighting angle described in the embodiment of the present invention 3.
Reference is expressed as in figure：1- electrodes；2-LED chips；3- diffusion layers；4- fluorescent adhesive layers；The white wall glue of 5- first
Layer；The white wall glue-lines of 6- second.
Specific embodiment
Embodiment 1
The present embodiment provides a kind of lighting angle controllable chip-scale LED packagings, as shown in figure 1, it includes bottom surface
The sapphire LED chip 2 of electrode 1 is provided with, the electrode 1 is made up of positive pole and negative pole, there is sky between the positive pole and negative pole
Gap, the top and side of the LED chip 2 are provided with diffusion layer 3, and the diffusion layer 3 is located at the top of the electrode 1, described
The top of diffusion layer 3 is provided with fluorescent adhesive layer 4, and the LED chip 2, diffusion layer 3, the side of fluorescent adhesive layer 4 are provided with the first white wall
Glue-line 5, the refractive index of the refractive index more than the diffusion layer 3 of the LED chip 2, the refractive index of the diffusion layer 3 is more than described
The refractive index of fluorescent adhesive layer 4.In the present embodiment, the LED chip 2 is sapphire chip, and its refractive index is 1.78, the diffusion
Layer 3 is mixed to prepare by spread powder and packaging plastic, and the spread powder is methyl-monosilane, and packaging plastic is silica gel, the diffusion being mixed to get
3 thickness of layer are 1 μm, and refractive index is 1.7, and the fluorescent adhesive layer 4 is mixed to prepare by rear-earth-doped inorganic fluorescent powder and packaging plastic,
Wherein fluorescent material is the silicate fluorescent powder of doping erbium ion, and packaging plastic is silicones, 1 μm of the fluorescent glue thickness, refractive index
It is 1.7.
Wherein, the spread powder proportion is small, lubricity is good, hydrophobicity is good, and being shaped as material granule is spherical, and particle diameter is micro-
Meter level, the distribution height of particle diameter is concentrated, and the refractive index of material is more than 1.3, and with good heat-resistant quality.At high temperature,
Grain can guarantee that the sphericity and surface regularity of itself, and non-degradable, xanthochromia will not produce negative shadow to translucency and diffusion effect
Ring, while spreading powder material also has purity very high, very little is influenceed on light transmittance.
The second white wall glue-line 6 is provided with space between the positive pole and negative pole, the second white wall glue-line 6 is included just
White wall glue-line between pole and negative pole and to the extension extended away from the direction of the electrode 1, extension bottom surface and described
The one white bottom surface of wall glue-line 5 is concordant so that form groove structure, this implementation between the white wall glue-line 6 of the first white wall glue-line 5 and second
The thickness of extension described in example is 1 μm, the second white wall glue-line 6 is set between a positive electrode and a negative electrode, and make the second white wall glue-line 6
Extend to the bottom of electrode 1, it is protruded from the bottom surface of electrode 1, effectively prevent the silver whiskers of silver ion migration generation, prevented core
Short circuit between piece positive and negative electrode；The setting of extension also reduces the diffusion area of scaling powder, reduces scaling powder to product
The influence of performance, improves the reliability of product.
The first white wall glue-line 5, the material of the second white wall glue-line 6 are titanium dioxide, and reflectivity is 96%, described first
The surface configuration that white wall glue-line 5 is in contact with LED chip 2, diffusion layer 3, fluorescent adhesive layer 4 is plane, the first white wall glue-line 5
Also contacted with the electrode 1 of LED chip, as illustrated, the sectional view of the first white wall glue-line 5 is with three the five of right angle
Side shape.
The present embodiment also provides a kind of packaging technology of the controllable chip-scale LED packagings of lighting angle, and it is included such as
Lower step：
S1, the positioning lattice point in the making of exotic material surface with certain arrangement regulation, the positioning lattice point pair
Should be set in the position of electrode 1, sapphire LED chip 2 is fixed on exotic material surface, the high temperature resistant by crystal-bonding adhesive
Material is metallic plate, glass plate or high temperature resistant glue material, and the crystal-bonding adhesive is pyrolysis glue or UV glue；
S2, the mass ratio 0.1 according to fluorescent material and packaging plastic:1 proportions fluorescent glue, according to spread powder and packaging plastic
Mass ratio 0.1:1 proportions diffusion layer raw material；
S3, in the semi-finished product that step S1 is obtained the top of LED chip 2 and side molding diffusion layer 3, at the top of diffusion layer 3
Molding fluorescent adhesive layer 4, wherein, molding temperature is 80 DEG C, and molding pressure is 15kgf/m2, clamp time is 10min；
S4, unnecessary diffusion layer 3 and fluorescent adhesive layer 4 are removed according to the shape of the default first white wall glue-line；
S5, by the semi-finished product obtained by the step S4, be transferred to another exotic material surface, the exotic material
The electrode position of the surface correspondence sapphire LED chip is provided with the boss that height is for 1 μm, in the positive and negative electrode of LED chip 2
Between form the packing space of the second white wall glue-line 6 and its extension；
LED chip 2 described in S6, the semi-finished product obtained in step S5, diffusion layer 3, the side molding first of fluorescent adhesive layer 4
White wall glue-line 5, the second white wall glue-line 6 of molding between positive and negative electrode and two boss, wherein molding temperature are 80 DEG C, molding pressure
Power is 120kgf/m2, clamp time is 2min；
S7, baking-curing, the product that step 5 is obtained are placed in 100 DEG C of baking oven and toast 5h, obtain final product the chip-scale
LED component.
Embodiment 2
The present embodiment provides a kind of lighting angle controllable chip-scale LED packagings, as shown in Fig. 2 it includes bottom surface
The sapphire LED chip 2 of electrode 1 is provided with, the electrode 1 is made up of positive pole and negative pole, there is sky between the positive pole and negative pole
Gap, the top and side of the LED chip 2 are provided with diffusion layer 3, and the diffusion layer 3 is located at the top of the electrode 1, described
The top of diffusion layer 3 is provided with fluorescent adhesive layer 4, and the LED chip 2, diffusion layer 3, the side of fluorescent adhesive layer 4 are provided with the first white wall
Glue-line 5, the refractive index of the refractive index more than the diffusion layer 3 of the LED chip 2, the refractive index of the diffusion layer 3 is more than described
The refractive index of fluorescent adhesive layer 4.In the present embodiment, the LED chip 2 is sapphire chip, and its refractive index is 1.78, the diffusion
Layer 3 is mixed to prepare by spread powder and packaging plastic, and the spread powder is methyl-monosilane, and packaging plastic is silica gel, the diffusion being mixed to get
3 thickness of layer are 1000 μm, and refractive index is 1.3, and the fluorescent adhesive layer 4 mixes system with packaging plastic by rear-earth-doped inorganic fluorescent powder
, wherein fluorescent material is the silicate fluorescent powder of doping erbium ion, and packaging plastic is silicones, 1000 μm of the fluorescent glue thickness,
Refractive index is 1.3.
Wherein, the spread powder proportion is small, lubricity is good, hydrophobicity is good, and being shaped as material granule is spherical, and particle diameter is micro-
Meter level, the distribution height of particle diameter is concentrated, and the refractive index of material is more than 1.3, and with good heat-resistant quality.At high temperature,
Grain can guarantee that the sphericity and surface regularity of itself, and non-degradable, xanthochromia will not produce negative shadow to translucency and diffusion effect
Ring, while spreading powder material also has purity very high, very little is influenceed on light transmittance.
The second white wall glue-line 6 is provided with space between the positive pole and negative pole, the second white wall glue-line 6 is included just
White wall glue-line between pole and negative pole and to the extension extended away from the direction of the electrode 1, extension bottom surface and described
The one white bottom surface of wall glue-line 5 is concordant so that form groove structure, this implementation between the white wall glue-line 6 of the first white wall glue-line 5 and second
The thickness of extension described in example is 200 μm, the second white wall glue-line 6 is set between a positive electrode and a negative electrode, and make the second white wall glue
Layer 6 extends to the bottom of electrode 1, it is protruded from the bottom surface of electrode 1, effectively prevent the silver whiskers of silver ion migration generation, prevents
Short circuit between chip positive and negative electrode；The setting of extension also reduces the diffusion area of scaling powder, reduces scaling powder pair
The influence of properties of product, improves the reliability of product.
The first white wall glue-line 5, the material of the second white wall glue-line 6 are titanium dioxide, and reflectivity is 96%, described first
The surface configuration that white wall glue-line 5 is in contact with LED chip 2, diffusion layer 3, fluorescent adhesive layer 4 is parabola, the first white wall glue
Layer 5 is also contacted with the electrode 1 of LED chip.
The present embodiment also provides a kind of packaging technology of the controllable chip-scale LED packagings of lighting angle, and it is included such as
Lower step：
S1, the positioning lattice point in the making of exotic material surface with certain arrangement regulation, the positioning lattice point pair
Should be set in the position of electrode 1, sapphire LED chip 2 is fixed on exotic material surface, the high temperature resistant by crystal-bonding adhesive
Material is metallic plate, glass plate or high temperature resistant glue material, and the crystal-bonding adhesive is pyrolysis glue or UV glue；
S2, the mass ratio 1 according to fluorescent material and packaging plastic:1 proportions fluorescent glue, according to spread powder with encapsulation colloid
Amount compares 1:1 proportions diffusion layer raw material；
S3, in the semi-finished product that step S1 is obtained the top of LED chip 2 and side molding diffusion layer 3, at the top of diffusion layer 3
Molding fluorescent adhesive layer 4, wherein, molding temperature is 150 DEG C, and molding pressure is 120kgf/m2, clamp time is 2min；
S4, unnecessary diffusion layer 3 and fluorescent adhesive layer 4 are removed according to the shape of the default first white wall glue-line；
S5, by the semi-finished product obtained by the step S4, be transferred to another exotic material surface, the exotic material
The electrode position of the surface correspondence sapphire LED chip 2 is provided with the boss that height is for 200 μm, in the positive and negative of LED chip 2
The packing space of the second white wall glue-line 6 and its extension is formed between electrode；
LED chip 2 described in S6, the semi-finished product obtained in step S5, diffusion layer 3, the side molding first of fluorescent adhesive layer 4
White wall glue-line 5, the second white wall glue-line 6 of molding between positive and negative electrode and two boss, wherein molding temperature are 150 DEG C, molding
Pressure is 15kgf/m2, clamp time is 10min；
S7, baking-curing, the product that step 5 is obtained are placed in 150 DEG C of baking oven and toast 2h, obtain final product the chip-scale
LED component.
Embodiment 3
The present embodiment provides a kind of lighting angle controllable chip-scale LED packagings, as shown in figure 3, it includes bottom surface
The sapphire LED chip 2 of electrode 1 is provided with, the electrode 1 is made up of positive pole and negative pole, there is sky between the positive pole and negative pole
Gap, the top and side of the LED chip 2 are provided with diffusion layer 3, and the diffusion layer 3 is located at the top of the electrode 1, described
The top of diffusion layer 3 is provided with fluorescent adhesive layer 4, and the LED chip 2, diffusion layer 3, the side of fluorescent adhesive layer 4 are provided with the first white wall
Glue-line 5, the refractive index of the refractive index more than the diffusion layer 3 of the LED chip 2, the refractive index of the diffusion layer 3 is more than described
The refractive index of fluorescent adhesive layer 4.In the present embodiment, the LED chip 2 is sapphire chip, and its refractive index is 1.78, the diffusion
Layer 3 is mixed to prepare by spread powder and packaging plastic, and the spread powder is methyl-monosilane, and packaging plastic is silica gel, the diffusion being mixed to get
3 thickness of layer are 450 μm, and refractive index is 1.55, and the fluorescent adhesive layer 4 mixes system with packaging plastic by rear-earth-doped inorganic fluorescent powder
, wherein fluorescent material is the silicate fluorescent powder of doping erbium ion, and packaging plastic is silicones, 500 μm of the fluorescent glue thickness, folding
It is 1.48 to penetrate rate.
Wherein, the spread powder proportion is small, lubricity is good, hydrophobicity is good, and being shaped as material granule is spherical, and particle diameter is micro-
Meter level, the distribution height of particle diameter is concentrated, and the refractive index of material is more than 1.3, and with good heat-resistant quality.At high temperature,
Grain can guarantee that the sphericity and surface regularity of itself, and non-degradable, xanthochromia will not produce negative shadow to translucency and diffusion effect
Ring, while spreading powder material also has purity very high, very little is influenceed on light transmittance.
The second white wall glue-line 6 is provided with space between the positive pole and negative pole, the second white wall glue-line 6 is included just
White wall glue-line between pole and negative pole and to the extension extended away from the direction of the electrode 1, extension bottom surface and described
The one white bottom surface of wall glue-line 5 is concordant so that form groove structure, this implementation between the white wall glue-line 6 of the first white wall glue-line 5 and second
The thickness of extension described in example is 50 μm, the second white wall glue-line 6 is set between a positive electrode and a negative electrode, and make the second white wall glue-line
6 extend to the bottom of electrode 1, it is protruded from the bottom surface of electrode 1, effectively prevent the silver whiskers of silver ion migration generation, prevent
Short circuit between chip positive and negative electrode；The setting of extension also reduces the diffusion area of scaling powder, reduces scaling powder to producing
The influence of moral character energy, improves the reliability of product.
The first white wall glue-line 5, the material of the second white wall glue-line 6 are titanium dioxide, and reflectivity is 96%, described first
The surface configuration that white wall glue-line 5 is in contact with LED chip 2, diffusion layer 3, fluorescent adhesive layer 4 is ellipsoid, the first white wall glue
Layer 5 is also contacted with the electrode 1 of LED chip.
The present embodiment also provides a kind of packaging technology of the controllable chip-scale LED packagings of lighting angle, and it is included such as
Lower step：
S1, the positioning lattice point in the making of exotic material surface with certain arrangement regulation, the positioning lattice point pair
Should be set in the position of electrode 1, sapphire LED chip 2 is fixed on exotic material surface, the high temperature resistant by crystal-bonding adhesive
Material is metallic plate, glass plate or high temperature resistant glue material, and the crystal-bonding adhesive is pyrolysis glue or UV glue；
S2, the mass ratio 0.5 according to fluorescent material and packaging plastic:1 proportions fluorescent glue, according to spread powder and packaging plastic
Mass ratio 0.6:1 proportions diffusion layer raw material；
S3, in the semi-finished product that step S1 is obtained the top of LED chip 2 and side molding diffusion layer 3, at the top of diffusion layer 3
Molding fluorescent adhesive layer 4, wherein, molding temperature is 120 DEG C, and molding pressure is 75kgf/m2, clamp time is 5min；
S4, unnecessary diffusion layer 3 and fluorescent adhesive layer 4 are removed according to the shape of the default first white wall glue-line；
S5, by the semi-finished product obtained by the step S4, be transferred to another exotic material surface, the exotic material
The electrode position of the surface correspondence sapphire LED chip is provided with the boss that height is for 50 μm, in the positive negative electricity of LED chip 2
The packing space of the second white wall glue-line 6 and its extension is formed between pole；
LED chip 2 described in S6, the semi-finished product obtained in step S5, diffusion layer 3, the side molding first of fluorescent adhesive layer 4
White wall glue-line 5, wherein molding temperature is 110 DEG C, and pressure is 80kgf/m2, clamp time is 6min；
S7, baking-curing, the product that step 5 is obtained are placed in 120 DEG C of baking oven and toast 3h, obtain final product the chip-scale
LED component.
Obviously, above-described embodiment is only intended to clearly illustrate example, and not to the restriction of implementation method.It is right
For those of ordinary skill in the art, can also make on the basis of the above description other multi-forms change or
Change.There is no need and unable to be exhaustive to all of implementation method.And the obvious change thus extended out or
Among changing still in the protection domain of the invention.
Claims (10)
1. controllable chip-scale LED packagings of a kind of lighting angle, it is characterised in that the sapphire of electrode is provided with including bottom surface
LED chip, the electrode is made up of positive pole and negative pole, has space, the top of the LED chip between the positive pole and negative pole
Side is provided with diffusion layer, the diffusion layer top is provided with fluorescent adhesive layer, the LED chip, diffusion layer, fluorescent adhesive layer
Side is provided with the first white wall glue-line, the refractive index of the sapphire refractive index more than the diffusion layer of the LED chip, the expansion
Dissipate the refractive index of the refractive index more than the fluorescent adhesive layer of layer.
2. controllable chip-scale LED packagings of lighting angle according to claim 1, it is characterised in that the positive pole
The second white wall glue-line is provided with space and negative pole between, the second white wall glue-line bottom has to away from the electrode side
To the extension for extending, the extension bottom surface is concordant with the described first white wall glue-line bottom surface.
3. controllable chip-scale LED packagings of lighting angle according to claim 2, it is characterised in that described first
The surface configuration that white wall glue-line is in contact with the diffusion layer, fluorescence coating is plane, parabola or ellipsoid.
4. controllable chip-scale LED packagings of lighting angle according to claim 3, it is characterised in that the extension
The thickness in portion is 1-200 μm.
5. controllable chip-scale LED packagings of lighting angle according to claim 4, it is characterised in that the LED core
Piece is sapphire chip, and refractive index is 1.78, and the refractive index of the diffusion layer is 1.3-1.7, the refractive index of the fluorescent adhesive layer
It is 1.29-1.69.
6. controllable chip-scale LED packagings of lighting angle according to claim 5, it is characterised in that the diffusion
Layer is mixed to prepare by spread powder with packaging plastic, and the thickness of the diffusion layer is 1-1000 μm.
7. controllable chip-scale LED packagings of lighting angle according to claim 6, it is characterised in that the fluorescence
Glue-line is mixed to prepare by rear-earth-doped inorganic fluorescent powder and packaging plastic, and thickness is 1-1000 μm.
8. controllable chip-scale LED packagings of lighting angle according to claim 7, it is characterised in that the diffusion
Powder is at least one in methyl-monosilane, phenyl silane, polysiloxanes；The packaging plastic be silica gel, silicones, epoxy resin or
Polyurethane；The first white wall glue-line, the reflectivity of the second white wall glue-line are not less than 95%, and material is titanium dioxide or sulfuric acid
Barium.
9. the packaging technology of the controllable chip-scale LED packagings of a kind of lighting angle, it is characterised in that comprise the following steps：
S1, die bond, exotic material surface is fixed on by sapphire LED chip by crystal-bonding adhesive；
S2, according to mass ratio 0.1-1:1 by rear-earth-doped inorganic fluorescent powder and packaging plastic mixed preparing fluorescent glue, according to quality
Compare 0.1-1:Spread powder and packaging plastic are prepared diffusion layer raw material by 1；
S3, on the semi-finished product that the step S1 is obtained be molded diffusion layer, fluorescent adhesive layer is molded at the top of diffusion layer；
S4, unnecessary diffusion layer and fluorescent adhesive layer are removed according to the shape of the default first white wall glue-line；
S5, by the semi-finished product obtained by the step S4, be transferred to another exotic material surface, the exotic material surface
The electrode position of the correspondence sapphire LED chip is provided with the boss that height is for 1-200 μm；
S6：The first white adhesive layer and the second white adhesive layer are molded on the semi-finished product that the step S5 is obtained；
S7, baking-curing.
10. the packaging technology of the controllable chip-scale LED packagings of lighting angle according to claim 9, its feature exists
In the mold pressing procedure described in step S3, S6, molding temperature is 80-150 DEG C, and molding pressure is 15-120kgf/m2, mould
The pressure time is 2-10min；In the step S7, the baking temperature of the baking-curing is 100-150 DEG C, and baking time is 2-
5h。
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