CN107394025A - Thermal insulation layer reflecting LED packaging and light fixture - Google Patents
Thermal insulation layer reflecting LED packaging and light fixture Download PDFInfo
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- CN107394025A CN107394025A CN201710690775.XA CN201710690775A CN107394025A CN 107394025 A CN107394025 A CN 107394025A CN 201710690775 A CN201710690775 A CN 201710690775A CN 107394025 A CN107394025 A CN 107394025A
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- thermal insulation
- insulation layer
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- led packaging
- heat
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- 238000009413 insulation Methods 0.000 title claims abstract description 47
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 47
- 239000002096 quantum dot Substances 0.000 claims abstract description 44
- 239000000463 material Substances 0.000 claims abstract description 24
- 238000000576 coating method Methods 0.000 claims abstract description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000011248 coating agent Substances 0.000 claims abstract description 21
- 239000001301 oxygen Substances 0.000 claims abstract description 21
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 20
- 230000004888 barrier function Effects 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims description 35
- 239000011521 glass Substances 0.000 claims description 3
- 239000004033 plastic Substances 0.000 claims description 3
- 229920003023 plastic Polymers 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 19
- 238000005538 encapsulation Methods 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 4
- 230000000630 rising effect Effects 0.000 abstract description 4
- 230000008901 benefit Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 230000007774 longterm Effects 0.000 description 4
- 238000002493 microarray Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910001021 Ferroalloy Inorganic materials 0.000 description 1
- 206010019133 Hangover Diseases 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- ZTXONRUJVYXVTJ-UHFFFAOYSA-N chromium copper Chemical compound [Cr][Cu][Cr] ZTXONRUJVYXVTJ-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000000638 stimulation Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Abstract
The present invention relates to LED encapsulation technologies field, it is related to thermal insulation layer reflecting LED packaging and light fixture, fluorescence coating is disposed with the top of LED chip, heat-insulated glue-line, quantum dot layer and barrier water oxygen layer, heat-insulated glue-line is provided between quantum dot layer and fluorescence coating, to protect quantum dot, heat-insulated glue-line is provided between quantum dot layer and fluorescence coating, simultaneously the reflecting material for reflection light is internally provided with heat-insulated glue-line, the rising angle of LED chip can be improved by the reflection of reflecting material, make light can exhaling with greater angle, the reflection of reflecting material can be with center of dispersal light beam, make the distribution of light and more uniform, improve illuminating effect；Light fixture includes lamp socket, lamp stand, lamp holder and thermal insulation layer reflecting LED packaging, and light fixture has above-mentioned advantage compared with prior art.
Description
Technical field
The present invention relates to LED encapsulation technologies field, in particular to thermal insulation layer reflecting LED packaging and light fixture.
Background technology
In recent years, the back light unit as liquid crystal display devices such as TV, monitors, LED use have obtained rapidly
Development.LED has become the light source of various uses (for example, the light source of back light unit or the light for commonly lighting or illuminating
Source) main flow.By the way that the LED chip of semiconductor type is arranged in substrate and coats printing opacity tree to semiconductor type LED chip
Fat, LED is used in the form of packaging part, the light-transmissive resin for LED encapsulation piece can be included according to the output that will be realized
The phosphor of the desired color of light.
But LED of the prior art color developing effect is poor.
Therefore it provides a kind of preferable thermal insulation layer reflecting LED packaging of color developing effect and light fixture turn into this area skill
Art personnel important technological problems to be solved.
The content of the invention
The first object of the present invention is to provide a kind of thermal insulation layer reflecting LED packaging, to alleviate in the prior art
The technical problem of color developing effect difference.
A kind of thermal insulation layer reflecting LED packaging provided by the invention, including substrate and the LED on the substrate
Chip；
Fluorescence coating, heat-insulated glue-line, quantum dot layer and barrier water oxygen layer are successively set on the LED chip top from top to bottom
Portion；
The heat-insulated glue-line is internally provided with the reflecting material for reflection light.
Further, the upper surface of base plate is provided with the reflection sloping platform around the LED chip, and the reflection is oblique
Platform is in symmetry shape.
Further, the reflection sloping platform inwall is provided with concaveconvex structure, and the concaveconvex structure is surrounded on the LED chip
Around.
Further, it is provided with connected unit at the top of the reflection sloping platform.
Further, it is provided with transparent rack in the connected unit.
Further, the rack side wall is provided with mounting groove.
Further, it is provided with light-passing board in the mounting groove.
Further, the light-passing board is sapphire plate, glass or plastics.
Further, the barrier water oxygen layer outer wall is covered with layer of transparent glue-line.
The second object of the present invention is to provide a light fixture, to alleviate the technical problem of color developing effect difference in the prior art.
A kind of light fixture provided by the invention, including lamp socket, lamp stand, lamp holder and the thermal insulation layer reflecting LED packaging；
The lamp holder is connected by the lamp stand with the lamp socket, and the thermal insulation layer reflecting LED packaging is located at institute
State inside lamp holder.
Beneficial effect：
A kind of thermal insulation layer reflecting LED packaging provided by the invention, including substrate and the LED core on substrate
Piece, LED chip are arranged on substrate, and substrate is that LED chip is energized, and when in use, LED chip can produce larger heat
Amount, can quickly be excluded this heat by substrate, it is ensured that safety of the LED chip under long-term use, if LED chip produces
Larger heat can not quickly exclude, it will LED chip is impacted, or even directly damages LED chip；To improve LED
Illuminating effect, in LED encapsulation structure, fluorescence coating, heat-insulated glue-line, quantum dot layer and resistance are disposed with the top of LED chip
Water proof oxygen layer, fluorescence coating directly contact with LED chip, and barrier water oxygen layer be located at top, wherein quantum dot layer and fluorescence coating it
Between be provided with heat-insulated glue-line because LED chip is at work, a large amount of heat energy can be distributed, and this partial heat transmits can lead to downwards
Cross substrate and eliminate a part, another part can be communicated up, and cause the quantum point failure in the quantum dot layer of upper strata, therefore be protection
Quantum dot, heat-insulated glue-line is provided between quantum dot layer and fluorescence coating, by setting quantum dot layer, improves the illumination of LED
Effect；Meanwhile the reflecting material for reflection light is internally provided with heat-insulated glue-line, it can be carried by the reflection of reflecting material
The rising angle of high LED chip, make light can exhaling with greater angle, while can be divided by the reflection of reflecting material
Center column is dissipated, makes the distribution of light and more uniform, raising color developing effect.
A kind of light fixture provided by the invention, including lamp socket, lamp stand, lamp holder and thermal insulation layer reflecting LED packaging；Lamp holder
It is connected by lamp stand with lamp socket, thermal insulation layer reflecting LED packaging is located inside lamp holder, and light fixture has compared with prior art
Above-mentioned advantage, it is no longer superfluous herein to chat.
Brief description of the drawings
, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical scheme of the prior art
The required accompanying drawing used is briefly described in embodiment or description of the prior art, it should be apparent that, in describing below
Accompanying drawing is some embodiments of the present invention, for those of ordinary skill in the art, before creative work is not paid
Put, other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 is a kind of embodiment of thermal insulation layer reflecting LED packaging provided in an embodiment of the present invention；
Fig. 2 is the another embodiment of thermal insulation layer reflecting LED packaging provided in an embodiment of the present invention；
Fig. 3 is the another embodiment of thermal insulation layer reflecting LED packaging provided in an embodiment of the present invention；
Fig. 4 is the another embodiment of thermal insulation layer reflecting LED packaging provided in an embodiment of the present invention；
Fig. 5 is the another embodiment of thermal insulation layer reflecting LED packaging provided in an embodiment of the present invention；
Fig. 6 is the another embodiment of thermal insulation layer reflecting LED packaging provided in an embodiment of the present invention；
Fig. 7 is the another embodiment of thermal insulation layer reflecting LED packaging provided in an embodiment of the present invention；
Fig. 8 is the another embodiment of thermal insulation layer reflecting LED packaging provided in an embodiment of the present invention.
Icon：100- substrates；101- fluorescence coatings；The heat-insulated glue-lines of 102-；1021- reflecting materials；103- quantum dots
Layer；104- obstructs water oxygen layer；200-LED chips；300- reflects sloping platform；301- concaveconvex structures；302- connected units；400-
Transparent rack；500- light-passing boards；600- substratum transparents.
Embodiment
Technical scheme is clearly and completely described below in conjunction with accompanying drawing, it is clear that described implementation
Example is part of the embodiment of the present invention, rather than whole embodiments.Based on the embodiment in the present invention, ordinary skill
The every other embodiment that personnel are obtained under the premise of creative work is not made, belongs to the scope of protection of the invention.
In the description of the invention, it is necessary to explanation, term " " center ", " on ", " under ", "left", "right", " vertical ",
The orientation or position relationship of the instruction such as " level ", " interior ", " outer " be based on orientation shown in the drawings or position relationship, merely to
Be easy to the description present invention and simplify description, rather than instruction or imply signified device or element must have specific orientation,
With specific azimuth configuration and operation, therefore it is not considered as limiting the invention.In addition, term " first ", " second ",
" the 3rd " is only used for describing purpose, and it is not intended that instruction or hint relative importance.
In the description of the invention, it is necessary to illustrate, unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " should be interpreted broadly, for example, it may be being fixedly connected or being detachably connected, or be integrally connected；Can
To be mechanical connection or electrical connection；Can be joined directly together, can also be indirectly connected by intermediary, Ke Yishi
The connection of two element internals.For the ordinary skill in the art, with concrete condition above-mentioned term can be understood at this
Concrete meaning in invention.
The present invention is described in further detail below by specific examples of the implementation and with reference to accompanying drawing.
Fig. 1 is a kind of embodiment of thermal insulation layer reflecting LED packaging provided in an embodiment of the present invention；Fig. 2 is this
The another embodiment for the thermal insulation layer reflecting LED packaging that inventive embodiments provide；Fig. 3 provides for the embodiment of the present invention
Thermal insulation layer reflecting LED packaging another embodiment；Fig. 4 is that thermal insulation layer provided in an embodiment of the present invention is reflective
The another embodiment of LED packagings；Fig. 5 is thermal insulation layer reflecting LED packaging provided in an embodiment of the present invention
Another embodiment；Fig. 6 is another embodiment party of thermal insulation layer reflecting LED packaging provided in an embodiment of the present invention
Formula；Fig. 7 is the another embodiment of thermal insulation layer reflecting LED packaging provided in an embodiment of the present invention；Fig. 8 is the present invention
The another embodiment for the thermal insulation layer reflecting LED packaging that embodiment provides.
It is a kind of thermal insulation layer reflecting LED packaging provided in an embodiment of the present invention as Figure 1-Figure 8, including base
Plate 100 and the LED chip 200 on substrate 100；Fluorescence coating 101, heat-insulated glue-line 102, quantum dot layer 103 and barrier water oxygen
Layer 104 is successively set on the top of LED chip 200 from top to bottom；Heat-insulated glue-line 102 is internally provided with the reflection for reflection light
Material 1021.
A kind of thermal insulation layer reflecting LED packaging provided in an embodiment of the present invention, including substrate 100 and located at substrate
LED chip 200 on 100, LED chip 200 are set on the substrate 100, and substrate 100 is that LED chip 200 is energized, and
When in use, LED chip 200 can produce larger heat, can quickly be excluded this heat by substrate 100, it is ensured that LED chip
200 safety under long-term use, if larger heat can not be excluded quickly caused by LED chip 200, it will to LED chip
200 impact, or even directly damage LED chip 200；To improve the illuminating effect of LED, in LED encapsulation structure, LED core
The top of piece 200 is disposed with fluorescence coating 101, heat-insulated glue-line 102, quantum dot layer 103 and barrier water oxygen layer 104, fluorescence coating
101 directly contact with LED chip 200, and barrier water oxygen layer 104 be located at top, wherein quantum dot layer 103 and fluorescence coating 101 it
Between be provided with heat-insulated glue-line 102 because LED chip 200 is at work, a large amount of heat energy can be distributed, and this partial heat passes downwards
A part can be eliminated by substrate 100 by passing, and another part can be communicated up, and cause the quantum dot in upper strata quantum dot layer 103 to lose
Effect, therefore be protection quantum dot, heat-insulated glue-line 102 is provided between quantum dot layer 103 and fluorescence coating 101, passes through set amount
Son point layer 103, improve the illuminating effect of LED；Meanwhile it is internally provided with the reflection for reflection light in heat-insulated glue-line 102
Material 1021, the rising angle of LED chip 200 can be improved by the reflection of reflecting material 1021, allow light more big angle
Degree exhales, while with center of dispersal light beam, can make the distribution of light and more equal by the reflection of reflecting material 1021
It is even, improve color developing effect.
By the reflecting material 1021 set in heat-insulated glue-line 102, when LED chip 200 inspires light, light can the
One time was radiated on reflecting material 1021, was then reflected by reflecting material 1021, intensive light can will be concentrated to be separated,
After light is by heat-insulated glue-line 102, intensive uneven light can become uniform, and irradiating angle is bigger, so as to improve LED
Illuminating effect.
After reflection by reflecting material 1021, the irradiation of uniform light can be made on quantum dot layer 103, by uniform
Irradiation, can effectively improve color developing effect.
When setting fluorescence coating 101, heat-insulated glue-line 102, quantum dot layer 103 and barrier water oxygen layer 104, each layer is individually set
To put, i.e., fluorescence coating 101 is firstly provided in LED chip 200, then sets heat-insulated glue-line 102, then sets quantum dot layer 103 again,
Barrier water oxygen layer 104 is finally set, and wherein reflecting material 1021 is set after being sufficiently mixed with heat-insulated glue-line 102 with heat-insulated glue-line 102
Put on fluorescence coating 101.
Because water, oxygen have a great influence to quanta point material, or even cause quanta point material to fail, therefore in quantum dot layer
Barrier water oxygen layer 104 is set on 103, the long-time normal use of quantum dot layer 103 can be made by such setting.
Specifically, barrier water oxygen glue is provided with fluorescence coating 101, heat-insulated glue-line 102 and quantum dot layer 103, to ensure
The long-term normal work of quantum dot.
Wherein, stimulated whenever by light or electricity, quantum dot will send coloured light, and the color of light is by quantum dot
Composition material and size shape determine, if general particle is smaller, can absorb long wave, particle is bigger, can absorb shortwave.It is 2 nanometers big
Small quantum dot, the red of long wave is can absorb, show blueness, the quantum dot of 8 nanosizeds, can absorb the blueness of shortwave, be in
Reveal red.This characteristic enables quantum dot to change the light color that light source is sent.Therefore it is glimmering using quantum dot layer 103-
Photosphere 101-LED chips 200 can obtain default requirement.
Quantum dot is the nanocrystal of quasi-zero dimension simultaneously, and crystal grain diameter is between 2-10 nanometers, and quantum dot is by electrically or optically
Stimulation the pure monochromatic light of the high quality of various different colours can be sent according to the diameter of quantum dot, therefore can carry
High color developing effect.
Quantum dot has narrow and symmetrical fluorescence emission peak, and is not easy when using simultaneously without hangover, color quantum point
Existing spectrum overlaps, it is possible to increase color developing effect.
Wherein, built-in microarray cavity is provided with heat-radiating substrate 100, heat radiation working medium is filled in built-in microarray cavity, it is interior
It is built-in microarray cavity made of hot channel to put microarray cavity, and pipe thickness is 5 μm.
Meanwhile heat-radiating substrate 100 can be made of highly heat-conductive material, for example, by two kinds of diamond dusts according to quality
Ratio 7：3 with binding agent polyvinyl alcohol by volume 5：1 is well mixed, is put into cold isostatic press, and pressurize 400MPa, pressurize
5min, binding agent is removed under inert gas conditions, wrapped up with chromiumcopper powder and load graphite jig, vacuumize 20min, pressurize
25MPa and in a manner of gradient increased temperature, 600 DEG C first are heated to uniform programming rate 1min, are incubated 1h, then uniformly to rise
Warm speed 1min is heated to 1150 DEG C, is incubated 10min.Cooling procedure uses annealing process, is initially cooled to 600 DEG C, is incubated 5h, then
Natural cooling, finally the sampling demoulding.HIP sintering is carried out to sample again, is forced into 400MPa, temperature is risen to by room temperature
1200 DEG C, soaking time 5h.Cooling procedure is handled using annealing process, is initially cooled to 600 DEG C, is incubated 6h, then natural cooling
Sample is made.For consistency up to 99%, thermal conductivity is 750W/ (mk).
Wherein, substrate 100 can be aluminum nitride ceramic substrate 100, aluminium oxide ceramic substrate 100, gold base 100, silver-based
Plate 100, copper base 100, iron substrate 100, billon substrate 100, silver alloy substrate 100, copper alloy substrate 100, ferroalloy base
Any of plate 100, PPA substrates 100, PCT substrates 100, HTN substrates 100, EMC substrates 100 or SMC substrates 100.
It should be noted that the reflecting material 1021 being arranged on inside heat-insulated glue-line 102 can be arranged to reflect material, lead to
Superrefraction material reflects to light.
In the alternative of the present embodiment, the upper surface of substrate 100 is provided with the reflection sloping platform around LED chip 200
300, reflection sloping platform 300 is in symmetry shape.
The upper surface of substrate 100 is additionally provided with reflection sloping platform 300, and reflection sloping platform 300 is located at around LED chip 200, and reflects
The height of sloping platform 300 is 1-1.5 times of the height of LED chip 200.
When LED chip 200 works, the light excited can increase irradiating angle by reflecting sloping platform 300, improve out light efficiency
Rate, and change rising angle, so as to improve illuminating effect.
In the alternative of the present embodiment, the reflection inwall of sloping platform 300 is provided with concaveconvex structure 301, and concaveconvex structure 301 is surround
Around LED chip 200.
During the use of LED, it might have certain moisture and enter in LED packagings, the moisture meeting of entrance
The quality of LED chip 200 is influenceed, therefore the reflection inwall of sloping platform 300 is provided with concaveconvex structure 301, concaveconvex structure 301 is surrounded on
Around LED chip 200, the moisture of entrance can be deposited in concaveconvex structure 301.
Specifically, concaveconvex structure 301 can be groove structure, i.e., reflection sloping platform 300 inwall is set fluted, and groove
Opening is smaller, the reflecting effect of the influence reflection sloping platform 300 of minimum degree.
In the alternative of the present embodiment, the top of reflection sloping platform 300 is provided with connected unit 302.
Connected unit 302 is provided with the top of the reflection outer wall of sloping platform 300, can be set by connected unit 302 in reflection sloping platform 300
Other assemblies.
Specifically, offering ladder platform at the top of the outer wall of reflection sloping platform 300, this ladder platform is connected unit 302, is being connected
During miscellaneous part, connected unit 302 not only plays connection function, moreover it is possible to plays a supporting role.
In the alternative of the present embodiment, transparent rack 400 is provided with connected unit 302.
Support fluorescence coating 101, heat-insulated glue-line 102, quantum dot layer 103 and barrier water oxygen layer 104 are provided with connected unit 302
Transparent rack 400, support is set into transparent shape, improves light-out effect.
Wherein, fluorescence coating 101, heat-insulated glue-line 102, quantum dot layer 103 and barrier water oxygen layer 104 can pass through transparent rack
400 supports, it can also then remove auxiliary mould bases in encapsulation process by aiding in mould bases to support.
Air port is offered on support simultaneously, when in use, extraneous air can be passed in and out by air port, and thermal insulation layer is reflected
Formula LED packagings are cooled.
In the alternative of the present embodiment, rack side wall is provided with mounting groove.
In actual use, miscellaneous part can be set on transparent rack 400, therefore be provided with rack side wall
Mounting groove.
Mounting groove can be arranged to the groove of the other forms such as neck, be as long as miscellaneous part can be installed by mounting groove
Can.
Light-passing board 500 is provided with the alternative of the present embodiment, in mounting groove.
To improve the quality of quantum dot LED, light-passing board 500 can be set in mounting groove, can be with by light-passing board 500
The light sent is more uniform.
In the alternative of the present embodiment, light-passing board 500 is sapphire plate, glass or plastics.
Because LED light source is spot light, irradiating to be a bright spot afterwards, this amount point very little and very bright is very dazzling,
Be not easy to do room lighting light source, thus need with spread light-passing board 500 by spot light intralamellar part occur repeatedly refraction after it is right
Light is disperseed, and allows spot light to be changed into area source, and because the organosilicon material in material can allow shaped article to produce necessarily
Mist degree, spot light can be covered, the vaporific degree makes overall light efficiency become soft.
In the alternative of the present embodiment, the outer wall of barrier water oxygen layer 104 is covered with layer of transparent glue-line 600.
For protection LED chip 200, fluorescence coating 101, heat-insulated glue-line 102, quantum dot layer 103 and barrier water oxygen layer 104, make
It can long-term work, in its outer wall covered with layer of transparent glue-line 600.
Substratum transparent 600 preferably can come quantum dot layer 103 with air exclusion, avoid oxygen and moisture in air
Quantum dot performance is influenceed, on the other hand, silica gel can be preferably heat-insulated, can better ensure that the service life of quantum dot.
A kind of light fixture provided in an embodiment of the present invention, including lamp socket, lamp stand, lamp holder and thermal insulation layer reflecting LED wrapper
Part；Lamp holder is connected by lamp stand with lamp socket, and thermal insulation layer reflecting LED packaging is located inside lamp holder.
A kind of light fixture provided in an embodiment of the present invention, including lamp socket, lamp stand, lamp holder and thermal insulation layer reflecting LED wrapper
Part；Lamp holder is connected by lamp stand with lamp socket, and thermal insulation layer reflecting LED packaging is located inside lamp holder, light fixture and prior art
Compared to above-mentioned advantage, no longer go to live in the household of one's in-laws on getting married and chat herein.
Finally it should be noted that：Various embodiments above is merely illustrative of the technical solution of the present invention, rather than its limitations；To the greatest extent
The present invention is described in detail with reference to foregoing embodiments for pipe, it will be understood by those within the art that：Its according to
The technical scheme described in foregoing embodiments can so be modified, either which part or all technical characteristic are entered
Row equivalent substitution；And these modifications or replacement, the essence of appropriate technical solution is departed from various embodiments of the present invention technology
The scope of scheme.
Claims (10)
- A kind of 1. thermal insulation layer reflecting LED packaging, it is characterised in that including：Substrate and the LED core on the substrate Piece；Fluorescence coating, heat-insulated glue-line, quantum dot layer and barrier water oxygen layer are successively set at the top of the LED chip from top to bottom；The heat-insulated glue-line is internally provided with the reflecting material for reflection light.
- 2. thermal insulation layer reflecting LED packaging according to claim 1, it is characterised in that the upper surface of base plate is set The reflection sloping platform being equipped with around the LED chip, the reflection sloping platform is in symmetry shape.
- 3. thermal insulation layer reflecting LED packaging according to claim 2, it is characterised in that the reflection sloping platform inwall Concaveconvex structure is provided with, the concaveconvex structure is surrounded on around the LED chip.
- 4. thermal insulation layer reflecting LED packaging according to claim 2, it is characterised in that at the top of the reflection sloping platform It is provided with connected unit.
- 5. thermal insulation layer reflecting LED packaging according to claim 4, it is characterised in that set in the connected unit There is transparent rack.
- 6. thermal insulation layer reflecting LED packaging according to claim 5, it is characterised in that the rack side wall is set There is mounting groove.
- 7. thermal insulation layer reflecting LED packaging according to claim 6, it is characterised in that set in the mounting groove There is light-passing board.
- 8. thermal insulation layer reflecting LED packaging according to claim 7, it is characterised in that the light-passing board is blue precious Slabstone, glass or plastics.
- 9. thermal insulation layer reflecting LED packaging according to claim 1, it is characterised in that outside the barrier water oxygen layer Wall is covered with layer of transparent glue-line.
- 10. a kind of light fixture, it is characterised in that including the thermal insulation layer described in lamp socket, lamp stand, lamp holder and claim any one of 1-9 Reflecting LED packaging；The lamp holder is connected by the lamp stand with the lamp socket, and the thermal insulation layer reflecting LED packaging is located at the lamp Head is internal.
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| CN201710690775.XA CN107394025A (en) | 2017-08-14 | 2017-08-14 | Thermal insulation layer reflecting LED packaging and light fixture |
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| CN201710690775.XA CN107394025A (en) | 2017-08-14 | 2017-08-14 | Thermal insulation layer reflecting LED packaging and light fixture |
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Application publication date: 20171124 |