CN107302046A - The reflective quantum dot LED packagings of quantum dot layer and light fixture - Google Patents
The reflective quantum dot LED packagings of quantum dot layer and light fixture Download PDFInfo
- Publication number
- CN107302046A CN107302046A CN201710690771.1A CN201710690771A CN107302046A CN 107302046 A CN107302046 A CN 107302046A CN 201710690771 A CN201710690771 A CN 201710690771A CN 107302046 A CN107302046 A CN 107302046A
- Authority
- CN
- China
- Prior art keywords
- quantum dot
- reflective
- led
- layer
- glue
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000002096 quantum dot Substances 0.000 title claims abstract description 145
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 238000000576 coating method Methods 0.000 claims abstract description 31
- 239000011248 coating agent Substances 0.000 claims abstract description 30
- 239000000463 material Substances 0.000 claims abstract description 24
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000001301 oxygen Substances 0.000 claims abstract description 21
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 21
- 230000004888 barrier function Effects 0.000 claims abstract description 19
- 239000003292 glue Substances 0.000 claims abstract description 5
- 239000011521 glass Substances 0.000 claims description 3
- 239000004033 plastic Substances 0.000 claims description 3
- 229920003023 plastic Polymers 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 238000009434 installation Methods 0.000 claims description 2
- 238000007639 printing Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 21
- 238000005538 encapsulation Methods 0.000 abstract description 7
- 230000000630 rising effect Effects 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 5
- 230000008901 benefit Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 63
- 238000000034 method Methods 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 230000007774 longterm Effects 0.000 description 4
- 238000002493 microarray Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910001021 Ferroalloy Inorganic materials 0.000 description 1
- 206010019133 Hangover Diseases 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- ZTXONRUJVYXVTJ-UHFFFAOYSA-N chromium copper Chemical compound [Cr][Cu][Cr] ZTXONRUJVYXVTJ-UHFFFAOYSA-N 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000000638 stimulation Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The present invention relates to LED encapsulation technologies field, it is related to the reflective quantum dot LED packagings of quantum dot layer and light fixture, the reflective quantum dot LED packagings of quantum dot layer include substrate and the LED chip on substrate, fluoresent coating is disposed with the top of LED chip, heat-insulated glue-line, quantum dot glue-line and barrier water oxygen layer, heat-insulated glue-line is provided between quantum dot glue-line and fluoresent coating, for protection quantum dot, heat-insulated glue-line is provided between quantum dot glue-line and fluoresent coating, quantum dot glue layer is provided with the reflecting material for reflection light simultaneously, the rising angle of LED chip can be improved by the reflection of reflecting material, make light can exhaling with greater angle, the reflection of reflecting material can be with center of dispersal light beam, make the distribution of light and more uniform, improve illuminating effect;Light fixture includes lamp socket, lamp stand, lamp holder and the reflective quantum dot LED packagings of quantum dot layer, and light fixture has above-mentioned advantage compared with prior art.
Description
Technical field
The present invention relates to LED encapsulation technologies field, in particular to the reflective quantum dot LED wrappers of quantum dot layer
Part and light fixture.
Background technology
In recent years, as the back light unit of the liquid crystal display devices such as TV, monitor, LED use has been obtained rapidly
Development.LED has become the light source of various uses (for example, the light source of back light unit or the light for commonly lighting or illuminating
Source) main flow.By the way that the LED chip of semiconductor type is arranged in substrate and printing opacity tree is coated to semiconductor type LED chip
Fat, LED is used in the form of packaging part, and the light-transmissive resin for LED encapsulation piece can be included according to the output that will be realized
The phosphor of the desired color of light.
But, LED of the prior art color developing effect is poor.
Therefore it provides a kind of reflective quantum dot LED packagings of the preferable quantum dot layer of color developing effect and light fixture turn into
Those skilled in the art's important technological problems to be solved.
The content of the invention
The first object of the present invention is to provide a kind of quantum dot layer reflective quantum dot LED packagings, existing to alleviate
There is the technical problem of color developing effect difference in technology.
The reflective quantum dot LED packagings of a kind of quantum dot layer that the present invention is provided, including substrate and located at the base
LED chip on plate;
Fluoresent coating, heat-insulated glue-line, quantum dot glue-line and barrier water oxygen layer are successively set on the LED chip from top to bottom
Top, the fluoresent coating covers the LED chip;
The quantum dot glue layer is provided with the reflecting material for reflection light.
Further, the upper surface of base plate is provided with the reflection sloping platform around the LED chip, and the reflection is oblique
Platform is in symmetry shape.
Further, the reflection sloping platform inwall is provided with concaveconvex structure, and the concaveconvex structure is surrounded on the LED chip
Around.
Further, it is provided with connected unit at the top of the reflection sloping platform.
Further, it is provided with transparent rack in the connected unit.
Further, the rack side wall is provided with mounting groove.
Further, it is provided with light-passing board in the mounting groove.
Further, the light-passing board is sapphire plate, glass or plastics.
Further, the barrier water oxygen layer outer wall is covered with layer of transparent glue-line.
The second object of the present invention is to provide a light fixture, to alleviate the technical problem of color developing effect difference in the prior art.
A kind of light fixture that the present invention is provided, including lamp socket, lamp stand, lamp holder and the reflective quantum dot LED of the quantum dot layer
Packaging;
The lamp holder is connected by the lamp stand with the lamp socket, the reflective quantum dot LED wrappers of quantum dot layer
Part is located inside the lamp holder.
Beneficial effect:
The reflective quantum dot LED packagings of a kind of quantum dot layer that the present invention is provided, including substrate and on substrate
LED chip, LED chip is arranged on substrate, and substrate is that LED chip is energized, and when in use, LED chip can be produced
Raw larger heat, can quickly be excluded this heat by substrate, it is ensured that safety of the LED chip under long-term use, if LED
The larger heat that chip is produced can not be excluded quickly, it will LED chip is impacted, or even directly damages LED chip;To carry
Fluoresent coating, heat-insulated glue-line, quantum are disposed with the illuminating effect of high LED, LED encapsulation structure, at the top of LED chip
Point glue-line and barrier water oxygen layer, fluoresent coating are directly contacted with LED chip, and barrier water oxygen layer is located at top, wherein quantum dot
Heat-insulated glue-line is provided between glue-line and fluoresent coating, because LED chip is operationally, a large amount of heat energy can be distributed, and this part
Heat, which is transmitted downwards, to eliminate a part by substrate, and another part can be communicated up, and cause the quantum in the quantum dot layer of upper strata
Point failure, therefore be protection quantum dot, heat-insulated glue-line is provided between quantum dot glue-line and fluoresent coating, by setting quantum
Point layer, improves the illuminating effect of LED;Meanwhile, quantum dot glue layer is provided with the reflecting material for reflection light, led to
The rising angle of LED chip can be improved by crossing the reflection of reflecting material, make light can exhaling with greater angle, simultaneously lead to
Crossing the reflection of reflecting material with center of dispersal light beam, can make the distribution of light and more uniform, raising color developing effect;And pass through
The reduction of fluoresent coating thickness, can improve the rising angle of LED chip, and can improve light emission rate, meanwhile, because fluorescence
The reduction of coating layer thickness, can cause light to shine directly on quantum dot glue-line, effectively improve illuminating effect.
A kind of light fixture that the present invention is provided, including lamp socket, lamp stand, lamp holder and the reflective quantum dot LED encapsulation of quantum dot layer
Device;Lamp holder is connected by lamp stand with lamp socket, and the reflective quantum dot LED packagings of quantum dot layer are located inside lamp holder, light fixture
There is above-mentioned advantage compared with prior art, no longer go to live in the household of one's in-laws on getting married and chat herein.
Brief description of the drawings
, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical scheme of the prior art
The accompanying drawing used required in embodiment or description of the prior art is briefly described, it should be apparent that, in describing below
Accompanying drawing is some embodiments of the present invention, for those of ordinary skill in the art, before creative work is not paid
Put, other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 is a kind of embodiment of the reflective quantum dot LED packagings of quantum dot layer provided in an embodiment of the present invention;
Fig. 2 is another embodiment party of the reflective quantum dot LED packagings of quantum dot layer provided in an embodiment of the present invention
Formula;
Fig. 3 is another embodiment party of the reflective quantum dot LED packagings of quantum dot layer provided in an embodiment of the present invention
Formula;
Fig. 4 is another embodiment party of the reflective quantum dot LED packagings of quantum dot layer provided in an embodiment of the present invention
Formula;
Fig. 5 is another embodiment party of the reflective quantum dot LED packagings of quantum dot layer provided in an embodiment of the present invention
Formula;
Fig. 6 is another embodiment party of the reflective quantum dot LED packagings of quantum dot layer provided in an embodiment of the present invention
Formula;
Fig. 7 is another embodiment party of the reflective quantum dot LED packagings of quantum dot layer provided in an embodiment of the present invention
Formula;
Fig. 8 is another embodiment party of the reflective quantum dot LED packagings of quantum dot layer provided in an embodiment of the present invention
Formula.
Icon:100- substrates;101- fluoresent coatings;The heat-insulated glue-lines of 102-;103- quantum dot glue-lines;1031- reflects
Material;104- barrier water oxygen layers;200-LED chips;300- reflects sloping platform;301- concaveconvex structures;302- connected units;
400- transparent racks;500- light-passing boards;600- substratum transparents.
Embodiment
Technical scheme is clearly and completely described below in conjunction with accompanying drawing, it is clear that described implementation
Example is a part of embodiment of the invention, rather than whole embodiments.Based on the embodiment in the present invention, ordinary skill
The every other embodiment that personnel are obtained under the premise of creative work is not made, belongs to the scope of protection of the invention.
In the description of the invention, it is necessary to explanation, term " " center ", " on ", " under ", "left", "right", " vertical ",
The orientation or position relationship of the instruction such as " level ", " interior ", " outer " be based on orientation shown in the drawings or position relationship, merely to
Be easy to the description present invention and simplify description, rather than indicate or imply signified device or element must have specific orientation,
With specific azimuth configuration and operation, therefore it is not considered as limiting the invention.In addition, term " first ", " second ",
" the 3rd " is only used for describing purpose, and it is not intended that indicating or implying relative importance.
In the description of the invention, it is necessary to illustrate, unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " should be interpreted broadly, for example, it may be being fixedly connected or being detachably connected, or be integrally connected;Can
To be mechanical connection or electrical connection;Can be joined directly together, can also be indirectly connected to by intermediary, Ke Yishi
The connection of two element internals.For the ordinary skill in the art, with concrete condition above-mentioned term can be understood at this
Concrete meaning in invention.
The present invention is described in further detail below by specific embodiment and with reference to accompanying drawing.
Fig. 1 is a kind of embodiment of the reflective quantum dot LED packagings of quantum dot layer provided in an embodiment of the present invention;
Fig. 2 is the another embodiment of the reflective quantum dot LED packagings of quantum dot layer provided in an embodiment of the present invention;Fig. 3 is
The another embodiment of the reflective quantum dot LED packagings of quantum dot layer provided in an embodiment of the present invention;Fig. 4 is the present invention
The another embodiment for the reflective quantum dot LED packagings of quantum dot layer that embodiment is provided;Fig. 5 is the embodiment of the present invention
The another embodiment of the reflective quantum dot LED packagings of quantum dot layer of offer;Fig. 6 is provided in an embodiment of the present invention
The another embodiment of the reflective quantum dot LED packagings of quantum dot layer;Fig. 7 is quantum dot provided in an embodiment of the present invention
The another embodiment of the reflective quantum dot LED packagings of layer;Fig. 8 reflects for quantum dot layer provided in an embodiment of the present invention
The another embodiment of formula quantum dot LED packagings.
It is a kind of reflective quantum dot LED wrappers of quantum dot layer provided in an embodiment of the present invention as Figure 1-Figure 8
Part, including substrate 100 and the LED chip 200 on substrate 100;Fluoresent coating 101, heat-insulated glue-line 102, quantum dot glue-line
103 are successively set on the top of LED chip 200, the covering LED chip 200 of fluoresent coating 101 from top to bottom with barrier water oxygen layer 104;
Heat-insulated glue-line 102 is internally provided with the reflecting material 1031 for reflection light.
The reflective quantum dot LED packagings of a kind of quantum dot layer provided in an embodiment of the present invention, including substrate 100 and set
In the LED chip 200 on substrate 100, LED chip 200 is set on the substrate 100, and substrate 100 is that LED chip 200 is supplied
Can, and when in use, LED chip 200 can produce larger heat, can quickly be excluded this heat by substrate 100, it is ensured that
Safety of the LED chip 200 under long-term use, if the larger heat that LED chip 200 is produced can not be excluded quickly, it will right
LED chip 200 is impacted, or even directly damages LED chip 200;To improve the illuminating effect of LED, LED encapsulation structure
In, the top of LED chip 200 is disposed with fluoresent coating 101, heat-insulated glue-line 102, quantum dot glue-line 103 and barrier water oxygen
Layer 104, fluoresent coating 101 is directly contacted with LED chip 200, and barrier water oxygen layer 104 is located at top, wherein quantum dot glue-line
Heat-insulated glue-line 102 is provided between 103 and fluoresent coating 101, because LED chip 200 is operationally, a large amount of heat energy can be distributed,
And this partial heat is transmitted downwards that a part can be eliminated by substrate 100, another part can be communicated up, and cause upper strata quantum dot
Quantum point failure in layer, therefore be protection quantum dot, it is provided between quantum dot glue-line 103 and fluoresent coating 101 heat-insulated
Glue-line 102, by setting quantum dot layer, improves the illuminating effect of LED;Meanwhile, it is internally provided with use in quantum dot glue-line 103
In the reflecting material 1031 of reflection light, the rising angle of LED chip 200 can be improved by the reflection of reflecting material 1031,
Make light can exhaling with greater angle, while by the reflection of reflecting material 1031 light can be made with center of dispersal light beam
The distribution of line is simultaneously more uniform, improves color developing effect.
It should be noted that the reflecting material 1031 being arranged on inside quantum dot glue-line 103 can be arranged to reflect material,
Reflected by refractor confrontation light.
Wherein, fluoresent coating 101 is arranged in LED chip 200 by spraying method, and its setting is convenient and swift, in production
During can improve operating efficiency, in use, because the thickness of thin of fluoresent coating 101, to the luminous of LED chip 200
Influence is small so that light can preferably irradiate quantum dispensing layer 103, effectively improve illuminating effect.
Specifically, by the reduction of the thickness of fluoresent coating 101, the rising angle of LED chip 200, and energy can be improved
Enough improve light emission rate.Moreover, because the reduction of the thickness of fluoresent coating 101, can cause light to shine directly into quantum dot glue-line
On 103, illuminating effect is effectively improved.
Pass through the reflecting material 1031 set in quantum dispensing layer 103, when LED chip 200 inspires light, light meeting
The very first time is radiated on reflecting material 1031, is then reflected by reflecting material 1031, intensive light can will be concentrated to divide equally
Open, after light is by quantum dispensing layer 103, intensive uneven light can become uniform, and irradiating angle is bigger, so as to improve
The illuminating effect of LED.
After reflection by reflecting material 1031, the irradiation of uniform light can be made on quantum dot glue-line 103, by equal
Even irradiation, can effectively improve color developing effect.
When setting fluoresent coating 101, heat-insulated glue-line 102, quantum dot glue-line 103 and barrier water oxygen layer 104, each layer is independent
Set, i.e., fluoresent coating 101 is firstly provided in LED chip 200, then sets heat-insulated glue-line 102, and quantum dispensing is then set again
Layer 103, finally sets barrier water oxygen layer 104, after wherein reflecting material 1031 is sufficiently mixed with quantum dot glue-line 103, with heat-insulated
Glue-line 102 is arranged on fluoresent coating 101.
Because water, oxygen influence larger to quanta point material, or even cause quanta point material to fail, therefore in quantum dispensing
Barrier water oxygen layer 104 is set on layer 103, by such setting quantum dot glue-line 103 can be made normally to use for a long time.
Specifically, barrier water oxygen glue is provided with fluoresent coating 101, heat-insulated glue-line 102 and quantum dot glue-line 103, with
Ensure the long-term normal work of quantum dot.
Wherein, stimulated whenever by light or electricity, quantum dot will send coloured light, and the color of light is by quantum dot
Composition material and size shape are determined, if general particle is smaller, can be absorbed long wave, particle is bigger, can be absorbed shortwave.It is 2 nanometers big
Small quantum dot, can absorb the red of long wave, shows blueness, and the quantum dot of 8 nanosizeds can absorb the blueness of shortwave, is in
Reveal red.This characteristic enables quantum dot to change the light color that light source is sent.Therefore using quantum dot glue-line 103-
Fluoresent coating 101-LED chips 200 can obtain default requirement.
Quantum dot is the nanocrystal of quasi-zero dimension simultaneously, and crystal grain diameter is between 2-10 nanometers, and quantum dot is by electrically or optically
Stimulation the high-quality pure monochromatic light of various different colours can be sent, therefore, it is possible to carry according to the diameter of quantum dot
High color developing effect.
Quantum dot has narrow and symmetrical fluorescence emission peak, and without hangover, color quantum point is not easy when using simultaneously
Existing spectrum is overlapped, it is possible to increase color developing effect.
Wherein, provided with built-in microarray cavity in heat-radiating substrate 100, the interior filling heat radiation working medium of built-in microarray cavity is interior
It is the built-in microarray cavity that hot channel is made to put microarray cavity, and pipe thickness is 5 μm.
Meanwhile, heat-radiating substrate 100 can be made of highly heat-conductive material, for example, by two kinds of diamond dusts according to quality
Ratio 7:3 with binding agent polyvinyl alcohol by volume 5:1 is well mixed, and is put into cold isostatic press, and pressurize 400MPa, pressurize
5min, removes binding agent under inert gas conditions, loads graphite jig with chromiumcopper powder parcel, vacuumizes 20min, pressurizes
25MPa and in the way of gradient increased temperature, is first heated to 600 DEG C with uniform programming rate 1min, is incubated 1h, then uniformly to rise
Warm speed 1min is heated to 1150 DEG C, is incubated 10min.Cooling procedure uses annealing process, is initially cooled to 600 DEG C, is incubated 5h, then
Natural cooling, finally the sampling demoulding.HIP sintering is carried out to sample again, 400MPa is forced into, temperature is risen to by room temperature
1200 DEG C, soaking time is 5h.Cooling procedure is handled using annealing process, is initially cooled to 600 DEG C, is incubated 6h, then natural cooling
Sample is made.Consistency is up to 99%, and thermal conductivity is 750W/ (mk).
Wherein, substrate 100 can be aluminum nitride ceramic substrate 100, aluminium oxide ceramic substrate 100, gold base 100, silver-based
Plate 100, copper base 100, iron substrate 100, billon substrate 100, silver alloy substrate 100, copper alloy substrate 100, ferroalloy base
Any of plate 100, PPA substrates 100, PCT substrates 100, HTN substrates 100, EMC substrates 100 or SMC substrates 100.
In the alternative of the present embodiment, the upper surface of substrate 100 is provided with the reflection sloping platform around LED chip 200
300, reflection sloping platform 300 is in symmetry shape.
The upper surface of substrate 100 is additionally provided with reflection sloping platform 300, and reflection sloping platform 300 is located at around LED chip 200, and reflection
The height of sloping platform 300 is 1-1.5 times of the height of LED chip 200.
When LED chip 200 works, the light excited can increase irradiating angle by reflecting sloping platform 300, improve out light efficiency
Rate, and change rising angle, so as to improve illuminating effect.
In the alternative of the present embodiment, the reflection inwall of sloping platform 300 is provided with concaveconvex structure 301, and concaveconvex structure 301 is surround
Around LED chip 200.
During the use of LED, it might have certain moisture and enter in LED packagings, the moisture meeting of entrance
The quality of LED chip 200 is influenceed, therefore the reflection inwall of sloping platform 300 is provided with concaveconvex structure 301, concaveconvex structure 301 is surrounded on
Around LED chip 200, the moisture of entrance can be deposited in concaveconvex structure 301.
Specifically, concaveconvex structure 301 can be groove structure, that is, reflect the inwall of sloping platform 300 and set fluted, and groove
Opening is smaller, the reflecting effect of the influence reflection sloping platform 300 of minimum degree.
In the alternative of the present embodiment, the top of reflection sloping platform 300 is provided with connected unit 302.
Connected unit 302 is provided with the top of the reflection outer wall of sloping platform 300, can be set by connected unit 302 in reflection sloping platform 300
Other assemblies.
Specifically, offering ladder platform at the top of the outer wall of reflection sloping platform 300, this ladder platform is connected unit 302, in connection
During miscellaneous part, connected unit 302 not only plays connection function, moreover it is possible to play a supporting role.
In the alternative of the present embodiment, transparent rack 400 is provided with connected unit 302.
Support fluoresent coating 101, heat-insulated glue-line 102, quantum dot glue-line 103 and barrier water oxygen are provided with connected unit 302
The transparent rack 400 of layer 104, transparent shape is set by support, improves light-out effect.
Wherein, fluoresent coating 101, heat-insulated glue-line 102, quantum dot glue-line 103 and barrier water oxygen layer 104 can be by transparent
Support 400 is supported, and can also then remove auxiliary mould bases in encapsulation process by aiding in mould bases to support.
Air port is offered on support simultaneously, when in use, extraneous air can be passed in and out by air port, anti-to quantum dot layer
Formula quantum dot LED packagings are penetrated to be cooled.
In the alternative of the present embodiment, rack side wall is provided with mounting groove.
In actual use, miscellaneous part can be set on transparent rack 400, therefore be provided with rack side wall
Mounting groove.
Mounting groove can be arranged to the groove of the other forms such as neck, be as long as miscellaneous part can be installed by mounting groove
Can.
Light-passing board 500 is provided with the alternative of the present embodiment, in mounting groove.
To improve the quality of quantum dot LED, light-passing board 500 can be set in mounting groove, can be with by light-passing board 500
The light sent is more uniform.
In the alternative of the present embodiment, light-passing board 500 is sapphire plate, glass or plastics.
Because LED/light source is spot light, irradiate to be a bright spot afterwards, this amount point very little and very bright is very dazzling,
Be not easy to do room lighting light source, thus need with spread light-passing board 500 by spot light intralamellar part occur repeatedly refraction after it is right
Light is disperseed, and allows spot light to be changed into area source, and because the organosilicon material in material can allow shaped article to produce necessarily
Mist degree, can cover spot light, and the vaporific degree makes overall light efficiency become soft.
In the alternative of the present embodiment, barrier water oxygen 104 outer wall of layer are covered with layer of transparent glue-line 600.
For protection LED chip 200, fluoresent coating 101, heat-insulated glue-line 102, quantum dot glue-line 103 and barrier water oxygen layer
104 so that its can long-term work, in its outer wall covered with layer of transparent glue-line 600.
Substratum transparent 600 preferably can come quantum dot glue-line 103 and air exclusion, it is to avoid oxygen and water in air
Divide influence quantum dot performance, on the other hand, silica gel can be preferably heat-insulated, can better ensure that the service life of quantum dot.
A kind of light fixture provided in an embodiment of the present invention, including lamp socket, lamp stand, lamp holder and the reflective quantum dot of quantum dot layer
LED packagings;Lamp holder is connected by lamp stand with lamp socket, and the reflective quantum dot LED packagings of quantum dot layer are located in lamp holder
Portion.
A kind of light fixture provided in an embodiment of the present invention, including lamp socket, lamp stand, lamp holder and the reflective quantum dot of quantum dot layer
LED packagings;Lamp holder is connected by lamp stand with lamp socket, and the reflective quantum dot LED packagings of quantum dot layer are located in lamp holder
Portion, light fixture has above-mentioned advantage compared with prior art, no longer goes to live in the household of one's in-laws on getting married and chats herein.
Finally it should be noted that:Various embodiments above is merely illustrative of the technical solution of the present invention, rather than its limitations;To the greatest extent
The present invention is described in detail with reference to foregoing embodiments for pipe, it will be understood by those within the art that:Its according to
The technical scheme described in foregoing embodiments can so be modified, or which part or all technical characteristic are entered
Row equivalent substitution;And these modifications or replacement, the essence of appropriate technical solution is departed from various embodiments of the present invention technology
The scope of scheme.
Claims (10)
1. a kind of reflective quantum dot LED packagings of quantum dot layer, it is characterised in that including:Substrate and located at the substrate
On LED chip;
Fluoresent coating, heat-insulated glue-line, quantum dot glue-line and barrier water oxygen layer are successively set on the LED chip top from top to bottom
Portion, the fluoresent coating covers the LED chip;
The quantum dot glue layer is provided with the reflecting material for reflection light.
2. the reflective quantum dot LED packagings of quantum dot layer according to claim 1, it is characterised in that the substrate
Upper surface is provided with the reflection sloping platform around the LED chip, and the reflection sloping platform is in symmetry shape.
3. the reflective quantum dot LED packagings of quantum dot layer according to claim 2, it is characterised in that the reflection
Sloping platform inwall is provided with concaveconvex structure, and the concaveconvex structure is surrounded on around the LED chip.
4. the reflective quantum dot LED packagings of quantum dot layer according to claim 2, it is characterised in that the reflection
Connected unit is provided with the top of sloping platform.
5. the reflective quantum dot LED packagings of quantum dot layer according to claim 4, it is characterised in that the connection
Transparent rack is provided with platform.
6. the reflective quantum dot LED packagings of quantum dot layer according to claim 5, it is characterised in that the support
Side wall is provided with mounting groove.
7. the reflective quantum dot LED packagings of quantum dot layer according to claim 6, it is characterised in that the installation
Light-passing board is provided with groove.
8. the reflective quantum dot LED packagings of quantum dot layer according to claim 7, it is characterised in that the printing opacity
Plate is sapphire plate, glass or plastics.
9. the reflective quantum dot LED packagings of quantum dot layer according to claim 1, it is characterised in that the barrier
Water oxygen layer outer wall is covered with layer of transparent glue-line.
10. a kind of light fixture, it is characterised in that including the quantum dot described in lamp socket, lamp stand, lamp holder and claim any one of 1-9
The reflective quantum dot LED packagings of layer;
The lamp holder is connected by the lamp stand with the lamp socket, the reflective quantum dot LED packagings position of quantum dot layer
Inside the lamp holder.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710690771.1A CN107302046A (en) | 2017-08-14 | 2017-08-14 | The reflective quantum dot LED packagings of quantum dot layer and light fixture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710690771.1A CN107302046A (en) | 2017-08-14 | 2017-08-14 | The reflective quantum dot LED packagings of quantum dot layer and light fixture |
Publications (1)
Publication Number | Publication Date |
---|---|
CN107302046A true CN107302046A (en) | 2017-10-27 |
Family
ID=60131975
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710690771.1A Withdrawn CN107302046A (en) | 2017-08-14 | 2017-08-14 | The reflective quantum dot LED packagings of quantum dot layer and light fixture |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN107302046A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108613139A (en) * | 2018-07-04 | 2018-10-02 | 天津中环电子照明科技有限公司 | Quantum dot LED packagings and lamps and lanterns |
CN109945144A (en) * | 2019-04-17 | 2019-06-28 | 陕西科技大学 | A kind of heat absorption decompression thermal conductivity heat-insulating structure for liquid quantum dot LED light |
WO2020024821A1 (en) * | 2018-08-01 | 2020-02-06 | 深圳Tcl新技术有限公司 | Quantum dot light-emitting diode and preparation method therefor, and quantum dot liquid crystal display module |
CN112103384A (en) * | 2020-09-23 | 2020-12-18 | 福建华佳彩有限公司 | Mini LED screen structure and packaging method thereof |
-
2017
- 2017-08-14 CN CN201710690771.1A patent/CN107302046A/en not_active Withdrawn
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108613139A (en) * | 2018-07-04 | 2018-10-02 | 天津中环电子照明科技有限公司 | Quantum dot LED packagings and lamps and lanterns |
WO2020024821A1 (en) * | 2018-08-01 | 2020-02-06 | 深圳Tcl新技术有限公司 | Quantum dot light-emitting diode and preparation method therefor, and quantum dot liquid crystal display module |
CN109945144A (en) * | 2019-04-17 | 2019-06-28 | 陕西科技大学 | A kind of heat absorption decompression thermal conductivity heat-insulating structure for liquid quantum dot LED light |
CN112103384A (en) * | 2020-09-23 | 2020-12-18 | 福建华佳彩有限公司 | Mini LED screen structure and packaging method thereof |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107331764A (en) | Quantum dot layer reflecting LED packaging and light fixture | |
CN107302046A (en) | The reflective quantum dot LED packagings of quantum dot layer and light fixture | |
TWI392110B (en) | Method for producing luminescence-conversion led | |
TWI304871B (en) | Reflector, light-emitting apparatus with the reflector, and illuminating apparatus with the reflector | |
CN105805699B (en) | The preparation method of Wavelength converter | |
CN108695421A (en) | Reflective insulation formula quantum dot LED packagings and lamps and lanterns | |
CN105278225A (en) | Wavelength conversion device, manufacture method thereof, correlative light-emitting device, and projection system | |
CN107331763A (en) | Quantum dot LED packagings and light fixture | |
CN108139520A (en) | Wavelength changing element and light-emitting device | |
CN106384775A (en) | LED upside-down mounting structure | |
CN107394030A (en) | Quantum dot LED encapsulation structure and light fixture | |
CN108069710A (en) | A kind of luminescent ceramic and light-emitting device | |
CN107302048A (en) | The reflective quantum dot LED packagings of thermal insulation layer and light fixture | |
CN104953017B (en) | Integral LED encapsulation piece and production technology are reinforced based on dusting band secondary light-distribution is inverted | |
CN108666408A (en) | Even smooth heat-insulating type quantum dot LED packagings and lamps and lanterns | |
CN101813254A (en) | Light supply apparatus | |
CN107394028A (en) | Quantum dot LED and light fixture | |
CN209544393U (en) | Quantum dot layer reflecting LED packaging and lamps and lanterns | |
CN109285938A (en) | A kind of chip-scale LED encapsulation method of high heat stability and products thereof | |
CN207021289U (en) | The reflective quantum dot LED packagings of quantum dot layer and light fixture | |
CN207233770U (en) | Quantum dot LED and lamps and lanterns | |
CN207021281U (en) | Thermal insulation layer reflecting LED packaging and light fixture | |
CN207021288U (en) | LED packagings and light fixture | |
CN107302047A (en) | LED packagings and light fixture | |
CN207338427U (en) | Quantum dot LED packagings and lamps and lanterns |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
WW01 | Invention patent application withdrawn after publication |
Application publication date: 20171027 |
|
WW01 | Invention patent application withdrawn after publication |