CN108666408A - Even smooth heat-insulating type quantum dot LED packagings and lamps and lanterns - Google Patents
Even smooth heat-insulating type quantum dot LED packagings and lamps and lanterns Download PDFInfo
- Publication number
- CN108666408A CN108666408A CN201810727026.4A CN201810727026A CN108666408A CN 108666408 A CN108666408 A CN 108666408A CN 201810727026 A CN201810727026 A CN 201810727026A CN 108666408 A CN108666408 A CN 108666408A
- Authority
- CN
- China
- Prior art keywords
- quantum dot
- led chip
- led
- light
- insulating type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000002096 quantum dot Substances 0.000 title claims abstract description 132
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 46
- 241001465382 Physalis alkekengi Species 0.000 title claims abstract description 13
- 239000000126 substance Substances 0.000 claims abstract description 44
- 230000004936 stimulating effect Effects 0.000 claims abstract description 33
- 238000009413 insulation Methods 0.000 claims abstract description 29
- 239000003292 glue Substances 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 44
- 239000000463 material Substances 0.000 claims description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 20
- 230000008901 benefit Effects 0.000 abstract description 6
- 238000005538 encapsulation Methods 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 36
- 239000000843 powder Substances 0.000 description 5
- 238000002493 microarray Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910001021 Ferroalloy Inorganic materials 0.000 description 1
- 206010019133 Hangover Diseases 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229940074869 marquis Drugs 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- VBUNOIXRZNJNAD-UHFFFAOYSA-N ponazuril Chemical compound CC1=CC(N2C(N(C)C(=O)NC2=O)=O)=CC=C1OC1=CC=C(S(=O)(=O)C(F)(F)F)C=C1 VBUNOIXRZNJNAD-UHFFFAOYSA-N 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Led Device Packages (AREA)
Abstract
The present invention relates to LED encapsulation technologies fields, are related to even smooth heat-insulating type quantum dot LED packagings and lamps and lanterns.Even smooth heat-insulating type quantum dot LED packagings are provided with the even stimulative substance for uniform light to be radiated to quantum dot glue-line in quantum dot glue layer, the light-emitting angle of the first LED chip and the second LED chip can be improved by the even smooth operation of even stimulative substance, make light can exhaling with greater angle, it simultaneously can be with center of dispersal light beam by even stimulative substance, make the distribution of light and more uniformly, improve color developing effect, and, the light that quantum dot can be made to excite by even stimulative substance is uniformly irradiated to the external world, improves illuminating effect.Thermal insulation layer is set between the first LED chip and quantum dot glue-line, and overheat can influence the working condition of quantum dot, and the luminous light efficiency of heat-insulating type quantum dot LED packagings is improved by the setting of thermal insulation layer.Lamps and lanterns have above-mentioned advantage compared with prior art.
Description
Technical field
The present invention relates to LED encapsulation technologies field, in particular to even smooth heat-insulating type quantum dot LED packagings and
Lamps and lanterns.
Background technology
In recent years, the use of the back light unit as liquid crystal display devices such as TV, monitors, LED has obtained rapidly
Development.LED has become light source for various purposes (for example, the light source of back light unit or the light for commonly shining or illuminating
Source) mainstream.By the way that the first LED chip of semiconductor type is mounted in substrate and is applied to the first LED chip of semiconductor type
Light-transmissive resin is covered, LED is used in the form of packaging part, the light-transmissive resin for LED encapsulation piece may include basis will be real
The phosphor of the desired color of existing output light.
But the color developing effect of LED in the prior art is poor.
Therefore it provides a kind of preferable even smooth heat-insulating type quantum dot LED packagings of color developing effect and lamps and lanterns become ability
Field technique personnel important technological problems to be solved.
Invention content
It is existing to alleviate the purpose of the present invention is to provide a kind of even smooth heat-insulating type quantum dot LED packagings and lamps and lanterns
The poor technical problem of the color developing effect of LED in technology.
In a first aspect, an embodiment of the present invention provides a kind of even smooth heat-insulating type quantum dot LED packagings, including substrate,
For emit the first LED chip of blue light, the second LED chip for emitting green light, quantum dot glue-line, for changing optical link
The even stimulative substance and thermal insulation layer of diameter;
The tiling of both first LED chip and second LED chip is arranged on the substrate, and described first
Space Interval between LED chip and second LED chip is 150-200 μm;
Thermal insulation layer setting on the substrate, and first LED chip and second LED chip both by
The thermal insulation layer covering, the quantum dot glue-line are covered on the thermal insulation layer;
The even stimulative substance is evenly distributed on the quantum dot glue layer, so that uniform light is radiated at the quantum dot
Glue-line.
With reference to first aspect, an embodiment of the present invention provides the first possible embodiments of first aspect, wherein on
It states and is covered with barrier water oxygen glue-line on quantum dot glue-line.
With reference to first aspect, an embodiment of the present invention provides second of possible embodiments of first aspect, wherein on
It includes the reflective material for reflection light and/or the refraction substance for refracted light to state even stimulative substance;
The diameter of the reflecting material and the refraction substance is between 1-30 μm.
With reference to first aspect, an embodiment of the present invention provides the third possible embodiments of first aspect, wherein on
It states and is provided with lug boss on substrate, both first LED chip and second LED chip are arranged at the lug boss
Place;
The upper surface of the lug boss is in cambered surface;
Spacing between first LED chip and second LED chip is 170 μm..
With reference to first aspect, an embodiment of the present invention provides the 4th kind of possible embodiments of first aspect, wherein on
The reflection sloping platform that upper surface of base plate is provided with around first LED chip is stated, the reflection sloping platform is in symmetry shape.
With reference to first aspect, an embodiment of the present invention provides the 5th kind of possible embodiments of first aspect, wherein on
It states reflection sloping platform inner wall and is provided with concaveconvex structure, the concaveconvex structure is surrounded on around first LED chip.
With reference to first aspect, an embodiment of the present invention provides the 6th kind of possible embodiments of first aspect, wherein on
It states and is provided with connected unit at the top of reflection sloping platform.
With reference to first aspect, an embodiment of the present invention provides the 7th kind of possible embodiments of first aspect, wherein on
It states and is provided with transparent rack in connected unit.
With reference to first aspect, an embodiment of the present invention provides the 8th kind of possible embodiments of first aspect, wherein on
It states transparent rack side wall and is provided with mounting groove.
Second aspect, an embodiment of the present invention provides a kind of lamps and lanterns, including the even smooth heat-insulating type quantum dot LED wrappers
Part and lamp body;
The even smooth heat-insulating type quantum dot LED packagings are mounted on the lamp body.
Advantageous effect:
An embodiment of the present invention provides a kind of even smooth heat-insulating type quantum dot LED packagings, including substrate, for emitting indigo plant
First LED chip of light, the second LED chip for emitting green light, the quantum dot glue-line for emitting feux rouges, for changing light
The even stimulative substance and thermal insulation layer of thread path;The tiling of both first LED chip and the second LED chip is disposed on the substrate, and first
Space Interval between LED chip and the second LED chip is 150-200 μm;Thermal insulation layer is disposed on the substrate, and the first LED core
Piece and the second LED chip are both covered by thermal insulation layer, and quantum dot glue-line is covered on thermal insulation layer;Even stimulative substance is evenly distributed on
Quantum dot glue layer, so that uniform light is radiated at the quantum dot glue-line.It is replaced using the green light that the second LED chip is sent out
Phosphor powder layer, and the service life of the first LED chip and the second LED chip is almost the same that (and LED chip and fluorescent adhesive layer service life are not
Together, the fluorescent adhesive layer service life is much smaller than the service life of LED chip), so even light can greatly be improved by the way that the second LED chip is arranged
The service life of heat-insulating type quantum dot LED packagings, moreover, quantum dot is arranged in the first LED chip and the second LED chip
Glue-line, at work, the quantum dot that the first LED chip for sending out blue light can be in excitation quantum point glue-line send out feux rouges, to
So that even smooth heat-insulating type quantum dot LED packagings send out white light, by the setting of quantum dot can greatly improve even light every
The color developing effect of hot type quantum dot LED packagings;And it is provided in quantum dot glue layer for irradiating uniform light
In the even stimulative substance of quantum dot glue-line, the first LED chip and the second LED chip can be improved by the even smooth operation of even stimulative substance
Light-emitting angle, make light can exhaling with greater angle, while light can be made with center of dispersal light beam by even stimulative substance
The distribution of line is simultaneously more uniform, improves color developing effect, also, uniformly shine by the light that even stimulative substance can be such that quantum dot excites
It is mapped to the external world, improves illuminating effect.Moreover, being arranged between quantum dot glue-line in both the first LED chip, the second LED chip
Thermal insulation layer is isolated the heat that the first LED chip and the second LED chip are sent out by thermal insulation layer, a large amount of heat transfer is avoided to arrive
In quantum dot glue-line, to which the quantum dot ensured in quantum dispensing layer can work in suitable environment, quantum dot is improved
Service life improves heat-insulating type quantum dot LED moreover, overheat can influence the working condition of quantum dot by the setting of thermal insulation layer
The luminous light efficiency of packaging.
An embodiment of the present invention provides a kind of lamps and lanterns, including even smooth heat-insulating type quantum dot LED packagings and lamp body;Even light
Heat-insulating type quantum dot LED packagings are mounted on lamp body.Lamps and lanterns have above-mentioned advantage compared with prior art, herein no longer
It repeats.
Other features and advantages of the present invention will illustrate in the following description, also, partly become from specification
It obtains it is clear that understand through the implementation of the invention.The purpose of the present invention and other advantages are in specification, claims
And specifically noted structure is realized and is obtained in attached drawing.
To enable the above objects, features and advantages of the present invention to be clearer and more comprehensible, preferred embodiment cited below particularly, and coordinate
Appended attached drawing, is described in detail below.
Description of the drawings
It, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical solution in the prior art
Embodiment or attached drawing needed to be used in the description of the prior art are briefly described, it should be apparent that, in being described below
Attached drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not making the creative labor
It puts, other drawings may also be obtained based on these drawings.
Fig. 1 is the first embodiment of even smooth heat-insulating type quantum dot LED packagings provided in an embodiment of the present invention;
Fig. 2 is second of embodiment of even smooth heat-insulating type quantum dot LED packagings provided in an embodiment of the present invention;
Fig. 3 is the third embodiment of even smooth heat-insulating type quantum dot LED packagings provided in an embodiment of the present invention.
Icon:100- substrates;110- lug bosses;120- thermal insulation layers;130- obstructs water oxygen glue-line;The first LED of 200-
Chip;The second LED chips of 300-;400- quantum dot glue-lines;The even stimulative substances of 410-;500- reflects sloping platform;510- bumps knots
Structure;520- connected units;530- transparent racks;600- light-transmitting plates.
Specific implementation mode
Technical scheme of the present invention is clearly and completely described below in conjunction with attached drawing, it is clear that described implementation
Example is a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill
The every other embodiment that personnel are obtained without making creative work, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that, term "center", " longitudinal direction ", " transverse direction ", " length ", " width ",
" thickness ", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outside", " up time
The orientation or positional relationship of the instructions such as needle ", " counterclockwise ", " axial direction ", " radial direction ", " circumferential direction " be orientation based on ... shown in the drawings or
Position relationship is merely for convenience of description of the present invention and simplification of the description, and does not indicate or imply the indicated device or element must
There must be specific orientation, with specific azimuth configuration and operation, therefore be not considered as limiting the invention.
In addition, term " first ", " second " are used for description purposes only, it is not understood to indicate or imply relative importance
Or implicitly indicate the quantity of indicated technical characteristic.Define " first " as a result, the feature of " second " can be expressed or
Implicitly include one or more this feature.In the description of the present invention, the meaning of " plurality " is two or more,
Unless otherwise specifically defined.
In the present invention unless specifically defined or limited otherwise, term " installation ", " connected ", " connection ", " fixation " etc.
Term shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integral;Can be that machinery connects
It connects, can also be electrical connection;It can be directly connected, can also can be indirectly connected through an intermediary in two elements
The interaction relationship of the connection in portion or two elements.It for the ordinary skill in the art, can be according to specific feelings
Condition understands the concrete meaning of above-mentioned term in the present invention.
The present invention is described in further detail below through specific implementation examples and in conjunction with the accompanying drawings.
With reference to shown in figure 1- Fig. 3:
An embodiment of the present invention provides a kind of even smooth heat-insulating type quantum dot LED packagings, including substrate 100, for sending out
Penetrate the first LED chip 200 of blue light, the second LED chip 300 for emitting green light, quantum dot glue-line 400, for changing light
The even stimulative substance 410 and thermal insulation layer 120 of thread path;The tiling of both first LED chip 200 and the second LED chip 300 is arranged in base
On plate 100, and the Space Interval between the first LED chip 200 and the second LED chip 300 is 150-200 μm;Thermal insulation layer 120
It is arranged on the substrate 100, and the first LED chip 200 and the second LED chip 300 are both covered by thermal insulation layer 120, quantum dot
Glue-line 400 is covered on thermal insulation layer 120;Even stimulative substance 410 is evenly distributed on inside quantum dot glue-line 400, so that uniform light
It is radiated at quantum dot glue-line 400.
An embodiment of the present invention provides a kind of even smooth heat-insulating type quantum dot LED packagings, including substrate 100, for sending out
Penetrate the first LED chip 200 of blue light, the second LED chip 300 for emitting green light, the quantum dot glue-line for emitting feux rouges
400 and for changing opticpath even stimulative substance 410;The tiling setting of both first LED chip 200 and the second LED chip 300
On the substrate 100, the Space Interval and between the first LED chip 200 and the second LED chip 300 is 150-200 μm;Thermal insulation layer
120 are arranged on the substrate 100, and the first LED chip 200 and the second LED chip 300 are both covered by thermal insulation layer 120, quantum
Point glue-line 400 is covered on thermal insulation layer 120;Even stimulative substance 410 is evenly distributed on inside quantum dot glue-line 400, so that light is equal
It is even to be radiated at quantum dot glue-line 400.Phosphor powder layer is replaced using the green light that the second LED chip 300 is sent out, passes through setting second
LED chip 300 can greatly improve the service life of even smooth heat-insulating type quantum dot LED packagings;In the first LED chip
200 and second layer of setting quantum dispensing in LED chip 300 400, when work, sending out the first LED chip 200 of blue light can swash
Quantum dot in hair quantum dot glue-line 400 sends out feux rouges so that even smooth heat-insulating type quantum dot LED packagings send out it is white
Light can greatly improve the color developing effect of even smooth heat-insulating type quantum dot LED packagings by the setting of quantum dot.And
Quantum dot glue-line 400 is internally provided with the even stimulative substance 410 for uniform light to be radiated to quantum dot glue-line 400, by even
The even smooth operation of stimulative substance 410 can improve the light-emitting angle of the first LED chip 200 and the second LED chip 300, make light can
It with exhaling for greater angle, is uniformly radiated on quantum dot glue-line 400, while can be disperseed by even stimulative substance 410
The center column of quantum dot light emitting makes the distribution of light and more uniform, raising color developing effect.Moreover, in the first LED chip
200, thermal insulation layer 120 between both second LED chips 300 and quantum dot glue-line 400 is set, be isolated first by thermal insulation layer 120
The heat that LED chip 200 and the second LED chip 300 are sent out, avoids in a large amount of heat transfer to quantum dot glue-line 400, to
Ensure that the quantum dot in quantum dispensing layer 400 can work in suitable environment, improves the service life of quantum dot, moreover,
Overheat can influence the working condition of quantum dot, and the hair of heat-insulating type quantum dot LED packagings is improved by the setting of thermal insulation layer 120
Light light efficiency.
Specifically, when the first LED chip 200 and the second LED chip 300 work, a large amount of heat will produce, and these
A heat part is discharged by substrate 100, and another part can pass to the quantum dot in quantum dot glue-line 400, and this part is hot
Amount is fatal for quantum dot, quantum dot can be caused to inactivate, to cause heat-insulating type quantum dot LED packagings to damage.And
By the setting of thermal insulation layer 120, most heats and quantum dot glue-line 400 can be kept apart, ensure that quantum dot can be
It works under suitable environment, improves the service life of heat-insulating type quantum dot LED packagings.Moreover, ring of the quantum dot in overheat
Colour developing error can be caused by working under border, and the thermal insulation layer 120 being arranged can make quantum dot work under suitable environment, to carry
The luminous light efficiency of high heat-insulating type quantum dot LED packagings.
Wherein, the first LED chip 200 and the second LED chip 300 are both welded with substrate 100, specifically, the first LED
Chip 200 and 300 bottom both ends of the second LED chip are welded with substrate 100, form positive and negative anodes channel.Connection side in this way
Working efficiency can be greatly improved in formula, and not will produce bubble in later stage dispensing (fluorescent glue or other glue) technique, greatly
Raising LED packagings quality.In the prior art, LED chip is connect with substrate 100 by conducting wire, is needed in LED core
Conducting wire is set at the top of piece, then conducting wire and substrate 100 link together, setting so not only reduces working efficiency, Er Qie
Bubble is easily generated during dispensing, influences the quality of LED packagings.
Specifically, even stimulative substance 410 can send out blue light that the first LED chip 200 is sent out and the second LED chip 300
Green light be uniformly radiated on quantum dot glue-line 400, the service life of quantum dot glue-line 400 is improved, moreover, working as quantum dispensing
When quantum dot in layer 400 is excited luminous, the light that quantum dot is sent out can break up uniformly light-emitting by even stimulative substance 410, improve
Shine light efficiency, and light efficiency is made to be more nearly natural light.
Quantum dot is the nanocrystal of quasi-zero dimension, and crystal grain diameter is between 2-10 nanometers, and quantum dot is by thorn electrically or optically
The pure monochromatic light of the high quality of various different colours can be sent out, therefore can improve aobvious according to the diameter of quantum dot by swashing
Color effect.Quantum dot has narrow and symmetrical fluorescence emission peak, and without hangover, color quantum point is not easy to occur when using simultaneously
Spectrum is overlapping, can improve color developing effect.
Specifically, both the first LED chip 200 and the second LED chip 300 tiling setting are on the substrate 100, and first
Space Interval between LED chip 200 and the second LED chip 300 is 150-200 μm.When the first LED chip 200 and second
For spacing between LED chip 300 when between 150-200 μm, both the first LED chip 200 and the second LED chip 300 will not
It interferes so that the first LED chip 200 and the second LED chip 300 can work normally.
Wherein, the first LED chip 200 and the second LED chip 300 are arranged on the substrate 100, by setting the spacing of the two
It sets between 150-200 μm, not will increase the size of original LED packagings not only, but also can ensure the first LED
Chip 200 and the second LED chip 300 can work normally.
After first LED chip 200 and the second LED chip 300 shine, light can be radiated in quantum dot glue-line 400, be swashed
Quantum dot light emitting is sent out, and uses quanta point material, can effectively improve color developing effect.
By the even stimulative substance 410 being arranged in quantum dispensing layer 400, when the first LED chip 200 and the second LED chip 300
When inspiring light, light can be at the first time radiated on even stimulative substance 410, and then the light path of light is changed, and can will be collected
In intensive light it is averagely separated, after light is by quantum dispensing layer 400, the light of intensive unevenness can become uniform, and shine
Firing angle degree bigger, to improve the illuminating effect of LED light.
After the light that first LED chip 200 and the second LED chip 300 inspire is by even stimulative substance 410, light can be made
Line is uniformly radiated on the quantum dot in quantum dot glue-line 400, by uniformly irradiating, can effectively improve colour developing effect
Fruit.
Wherein even stimulative substance 410 is sufficiently mixed with quantum dot glue-line 400, to ensure 410 amount of being evenly distributed on of even stimulative substance
Inside son point glue-line 400.
Wherein, it is equipped with built-in microarray cavity in substrate 100, heat radiation working medium is filled in built-in microarray cavity, it is built-in micro-
Array cavity is built-in microarray cavity made of hot channel, and pipe thickness is 5 μm.
Wherein, substrate 100 can be aluminum nitride ceramic substrate 100, aluminium oxide ceramic substrate 100, gold base 100, silver-based
Plate 100, copper base 100, iron substrate 100, billon substrate 100, silver alloy substrate 100, copper alloy substrate 100, ferroalloy base
Any one of plate 100, PPA substrates 100, PCT substrates 100, HTN substrates 100, EMC substrates 100 or SMC substrates 100.
In the alternative of the present embodiment, barrier water oxygen glue-line 130 is covered on quantum dot glue-line 400.
Because water, oxygen are affected to quantum dot powder material, or even cause quantum dot powder material to fail, therefore in quantum
Covering barrier water oxygen glue-line 130 on point glue-line 400, so that quantum dot powder long-time normal use.
In the alternative of the present embodiment, even stimulative substance 410 includes for the reflective material of reflection light and/or for rolling over
Penetrate the refraction substance of light;The diameter of reflecting material and refraction substance is between 1-30 μm.
Wherein, even stimulative substance 410 includes reflecting material and refraction substance, and the diameter of reflecting material and refraction substance exists
Between 1-30 μm, what reflecting material and refractor matter in this diameter can be best is changed route by light, avoids reflecting
The substance and upright diameter of refractor is excessive that light is caused to block so that you can not receive enough light with quantum band, while also avoid
Reflecting material and the upright diameter of refractor are too small, do not have the operation for changing opticpath.
Specifically, blue light that reflecting material and refractor matter can send out the first LED chip 200 and the second LED chip
300 green lights sent out are uniformly radiated on quantum dot glue-line 400, the service life of quantum dot glue-line 400 are improved, moreover, working as
When quantum dot in quantum dot glue-line 400 is excited luminous, the light that quantum dot is sent out can be beaten by reflecting material or refraction substance
Uniformly light-emitting is dissipated, the light efficiency that shines is improved, light efficiency is made to be more nearly natural light.
Wherein, it is micro- that gold goal, ping-pong ball, mesoporous silicon oxide, high molecular polymer may be used in reflecting material and refraction substance
Ball etc..
In the alternative of the present embodiment, the spacing between the first LED chip 200 and the second LED chip 300 is 170 μm.
Spacing between first LED chip 200 and the second LED chip 300 is 170 μm, can make the first LED chip 200
It is worked normally with the second LED chip 300, moreover, the light that the two is sent out can be merged preferably.
In the alternative of the present embodiment, lug boss 110, the first LED chip 200 and the 2nd LED are provided on substrate 100
Both chips 300 are arranged at lug boss 110.
In the alternative of the present embodiment, the upper surface of lug boss 110 is in cambered surface.
Wherein, lug boss 110 is provided on substrate 100, the first LED chip 200 and the second LED chip 300 are arranged at
At lug boss 110, and the upper surface of lug boss 110 is in cambered surface, when the first LED chip 200 and the second LED chip 300 are arranged
Marquis, the two can be at an angle of the angle less than 5 degree with horizontal plane, improve light extraction efficiency, make the first LED chip 200 and the 2nd LED
The light that chip 300 is sent out can be merged preferably, then the quantum dot of excitation quantum point glue-line 400, to improve lighting effect.
Specifically, it is front that the first LED chip 200, which is arranged, to obtain side with substrate 100.The front of lug boss 110 is anti-arc
The axis of face, the axis of the first LED chip 200 and the second LED chip 300 is deflected outward, and is reduced central area light and is concentrated (now
There is the central area light of LED light to concentrate very much, accounts for 70% or more of total light, and the heat of central area accounts for total amount of heat
70% or more, the permanent time can cause LED light to damage), setting, which can not only improve light efficiency, in this way (makes 200 He of the first LED chip
The light uniform irradiation that first LED chip 200 is sent out makes quantum dot that can work normally, avoids certain on quantum dot glue-line 400
Quantum dot in region is caused quantum dot to inactivate by amount of heat), and the service life of LED light can be improved.
In the alternative of the present embodiment, 100 upper surface of substrate is provided with the reflection around the first LED chip 200
Sloping platform 500, reflection sloping platform 500 are in symmetry shape.
100 upper surface of substrate is additionally provided with reflection sloping platform 500, and reflection sloping platform 500 is located at around LED chip, and reflects oblique
The height of platform 500 is 1-1.5 times of LED chip height.
When LED chip works, the light of excitation can increase irradiating angle by reflecting sloping platform 500, improve light extraction efficiency,
And change light-emitting angle, to improve illuminating effect.
In the alternative of the present embodiment, reflection 500 inner wall of sloping platform is provided with concaveconvex structure 510, and concaveconvex structure 510 is surround
Around the first LED chip 200.
During the use of LED light, it might have certain moisture and enter in LED packagings, the moisture meeting of entrance
The quality of LED chip is influenced, therefore reflection 500 inner wall of sloping platform is provided with concaveconvex structure 510, concaveconvex structure 510 is surrounded on LED
Around chip, the moisture of entrance can be deposited in concaveconvex structure 510.
Specifically, concaveconvex structure 510 can be groove structure, i.e., and the opening of groove is smaller, and the influence of minimum degree is anti-
Penetrate the reflecting effect of sloping platform 500.
In the alternative of the present embodiment, 500 top of reflection sloping platform is provided with connected unit 520.
It is provided with connected unit 520 at the top of reflection 500 outer wall of sloping platform, can be arranged in reflection sloping platform 500 by connected unit 520
Other assemblies.
Specifically, offering ladder platform at the top of the outer wall of reflection sloping platform 500, this ladder platform is connected unit 520, is being connected
When other component, connected unit 520 not only plays connection function, moreover it is possible to play a supporting role.
In the alternative of the present embodiment, transparent rack 530 is provided in connected unit 520.
It is provided with transparent rack 530 in connected unit 520, the setting of transparent rack 530 is transparent, light-out effect is improved.
Wherein, quantum dot glue-line 400 can be supported by transparent rack 530, can also pass through auxiliary in encapsulation process
Mould bases supports, then removal auxiliary mould bases.
Air port is offered on transparent rack 530 simultaneously, when in use, extraneous air can be passed in and out by air port, to amount
Son point LED cools down.
In the alternative of the present embodiment, 530 side wall of transparent rack is provided with mounting groove.
In actual use, other component can be set on transparent rack 530, therefore in 530 side of transparent rack
Wall is provided with mounting groove.
Mounting groove can be arranged to the slot of the other forms such as card slot, be as long as other component can be installed by mounting groove
It can.
To improve the lighting quality of quantum dot LED light, light-transmitting plate 600 can be set in mounting groove, pass through light-transmitting plate 600
It can be more uniform by the light sent out.Since LED light source is point light source, irradiate to be a bright spot later, this amount point
Very little and very bright, it is very dazzling, it is not easy to do room lighting light source, so needing to spread light-transmitting plate 600 by point light source in plate
Portion disperses light after repeatedly refraction occurs, and allows point light source to become area source, and since the organosilicon material in material can allow
Shaped article generates certain mist degree, can cover point light source, which makes whole light efficiency become soft.
For the first LED chip 200 of protection, the second LED chip 300 and quantum dot glue-line 400 so that it being capable of permanent worker
Make, layer of transparent glue-line is covered in its outer wall.
Substratum transparent can preferably come quantum dot glue-line 400 with air exclusion, avoid oxygen and moisture in air
Quantum dot performance is influenced, on the other hand, silica gel can be preferably heat-insulated, can better ensure that the service life of quantum dot.
An embodiment of the present invention provides a kind of lamps and lanterns, including even smooth heat-insulating type quantum dot LED packagings and lamp body;Even light
Heat-insulating type quantum dot LED packagings are mounted on lamp body.
Lamps and lanterns have above-mentioned advantage compared with prior art, and details are not described herein again.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means specific features, structure, material or spy described in conjunction with this embodiment or example
Point is included at least one embodiment or example of the invention.In the present specification, schematic expression of the above terms are not
It must be directed to identical embodiment or example.Moreover, particular features, structures, materials, or characteristics described can be in office
It can be combined in any suitable manner in one or more embodiments or example.In addition, without conflicting with each other, the skill of this field
Art personnel can tie the feature of different embodiments or examples described in this specification and different embodiments or examples
It closes and combines.
Although the embodiments of the present invention has been shown and described above, it is to be understood that above-described embodiment is example
Property, it is not considered as limiting the invention, those skilled in the art within the scope of the invention can be to above-mentioned
Embodiment is changed, changes, replacing and modification.
Claims (10)
1. a kind of even smooth heat-insulating type quantum dot LED packagings, which is characterized in that including:Substrate, first for emitting blue light
LED chip, the second LED chip for emitting green light, quantum dot glue-line, for changing the even stimulative substance of opticpath and heat-insulated
Layer;
The tiling of both first LED chip and second LED chip is arranged on the substrate, and first LED core
Space Interval between piece and second LED chip is 150-200 μm;
The thermal insulation layer is arranged on the substrate, and first LED chip and second LED chip are both described
Thermal insulation layer covers, and the quantum dot glue-line is covered on the thermal insulation layer;
The even stimulative substance is evenly distributed on the quantum dot glue layer, so that uniform light is radiated at the quantum dispensing
Layer.
2. even smooth heat-insulating type quantum dot LED packagings according to claim 1, which is characterized in that the quantum dispensing
Barrier water oxygen glue-line is covered on layer.
3. even smooth heat-insulating type quantum dot LED packagings according to claim 1, which is characterized in that the even stimulative substance
Include the reflective material for reflection light and/or the refraction substance for refracted light;
The diameter of the reflecting material and the refraction substance is between 1-30 μm.
4. even smooth heat-insulating type quantum dot LED packagings according to claim 3, which is characterized in that set on the substrate
It is equipped with lug boss, both first LED chip and second LED chip are arranged at the lug boss;
The upper surface of the lug boss is in cambered surface;
Spacing between first LED chip and second LED chip is 170 μm.
5. even smooth heat-insulating type quantum dot LED packagings according to claim 1, which is characterized in that the substrate upper table
Face is provided with the reflection sloping platform around first LED chip, and the reflection sloping platform is in symmetry shape.
6. even smooth heat-insulating type quantum dot LED packagings according to claim 5, which is characterized in that the reflection sloping platform
Inner wall is provided with concaveconvex structure, and the concaveconvex structure is surrounded on around first LED chip.
7. even smooth heat-insulating type quantum dot LED packagings according to claim 5, which is characterized in that the reflection sloping platform
Top is provided with connected unit.
8. even smooth heat-insulating type quantum dot LED packagings according to claim 7, which is characterized in that in the connected unit
It is provided with transparent rack.
9. even smooth heat-insulating type quantum dot LED packagings according to claim 8, which is characterized in that the transparent rack
Side wall is provided with mounting groove.
10. a kind of lamps and lanterns, which is characterized in that including the even smooth heat-insulating type quantum dot LED envelopes of claim 1-9 any one of them
Fill device and lamp body;
The even smooth heat-insulating type quantum dot LED packagings are mounted on the lamp body.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810727026.4A CN108666408A (en) | 2018-07-04 | 2018-07-04 | Even smooth heat-insulating type quantum dot LED packagings and lamps and lanterns |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810727026.4A CN108666408A (en) | 2018-07-04 | 2018-07-04 | Even smooth heat-insulating type quantum dot LED packagings and lamps and lanterns |
Publications (1)
Publication Number | Publication Date |
---|---|
CN108666408A true CN108666408A (en) | 2018-10-16 |
Family
ID=63772520
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810727026.4A Withdrawn CN108666408A (en) | 2018-07-04 | 2018-07-04 | Even smooth heat-insulating type quantum dot LED packagings and lamps and lanterns |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN108666408A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109449144A (en) * | 2018-10-19 | 2019-03-08 | 安徽芯瑞达科技股份有限公司 | A kind of high colour gamut LED lamp bead and its side-edge type backlight |
CN110854256A (en) * | 2019-11-27 | 2020-02-28 | 云谷(固安)科技有限公司 | Display panel and display device |
CN111710770A (en) * | 2020-06-29 | 2020-09-25 | 京东方科技集团股份有限公司 | Display panel, preparation method thereof and display device |
CN112838155A (en) * | 2021-02-26 | 2021-05-25 | 木林森股份有限公司 | LED lamp bead support with wide irradiation range and manufacturing process |
-
2018
- 2018-07-04 CN CN201810727026.4A patent/CN108666408A/en not_active Withdrawn
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109449144A (en) * | 2018-10-19 | 2019-03-08 | 安徽芯瑞达科技股份有限公司 | A kind of high colour gamut LED lamp bead and its side-edge type backlight |
CN110854256A (en) * | 2019-11-27 | 2020-02-28 | 云谷(固安)科技有限公司 | Display panel and display device |
CN111710770A (en) * | 2020-06-29 | 2020-09-25 | 京东方科技集团股份有限公司 | Display panel, preparation method thereof and display device |
CN111710770B (en) * | 2020-06-29 | 2021-12-07 | 京东方科技集团股份有限公司 | Display panel, preparation method thereof and display device |
CN112838155A (en) * | 2021-02-26 | 2021-05-25 | 木林森股份有限公司 | LED lamp bead support with wide irradiation range and manufacturing process |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108695421A (en) | Reflective insulation formula quantum dot LED packagings and lamps and lanterns | |
CN108666408A (en) | Even smooth heat-insulating type quantum dot LED packagings and lamps and lanterns | |
JP5665969B2 (en) | Optoelectronic device and manufacturing method of optoelectronic device | |
JP4993434B2 (en) | White LED lighting device | |
CN104995453B (en) | Lamps apparatus for vehicle | |
JP2012519972A (en) | Light emitting device comprising an LED having a phosphor layer | |
CN108598245A (en) | Reflective quantum dot LED packagings and lamps and lanterns | |
CN108695420A (en) | Heat-insulating type quantum dot LED packagings and lamps and lanterns | |
JP2007294894A (en) | Light-emitting device, and manufacturing method thereof | |
CN107331764A (en) | Quantum dot layer reflecting LED packaging and light fixture | |
JP2008021973A (en) | Light emitting device | |
CN105826436A (en) | LED flip chip and packaging method thereof, and LED surface light source | |
CN107302046A (en) | The reflective quantum dot LED packagings of quantum dot layer and light fixture | |
CN208478373U (en) | Reflective insulation formula quantum dot LED packaging and lamps and lanterns | |
CN110416384A (en) | A kind of packaging method promoting LED lamp bead light efficiency | |
CN208475262U (en) | Quantum dot LED packaging and lamps and lanterns | |
CN208767336U (en) | Even smooth heat-insulating type quantum dot LED packaging and lamps and lanterns | |
CN208835058U (en) | Even smooth formula quantum dot LED packaging and lamps and lanterns | |
CN208478374U (en) | Reflective quantum dot LED packaging and lamps and lanterns | |
CN107394030A (en) | Quantum dot LED encapsulation structure and light fixture | |
CN108573962A (en) | Even smooth formula quantum dot LED packagings and lamps and lanterns | |
CN209544393U (en) | Quantum dot layer reflecting LED packaging and lamps and lanterns | |
CN208478375U (en) | Heat-insulating type quantum dot LED packaging and lamps and lanterns | |
CN106920870A (en) | A kind of high-power UV LED chip eutectic weldering inverted structure | |
CN207097855U (en) | A kind of quantum dot LED encapsulation structure |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
WW01 | Invention patent application withdrawn after publication | ||
WW01 | Invention patent application withdrawn after publication |
Application publication date: 20181016 |