CN107331764A - Quantum dot layer reflecting LED packaging and light fixture - Google Patents
Quantum dot layer reflecting LED packaging and light fixture Download PDFInfo
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- CN107331764A CN107331764A CN201710690772.6A CN201710690772A CN107331764A CN 107331764 A CN107331764 A CN 107331764A CN 201710690772 A CN201710690772 A CN 201710690772A CN 107331764 A CN107331764 A CN 107331764A
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 96
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 46
- 239000010410 layer Substances 0.000 claims abstract description 82
- 239000000463 material Substances 0.000 claims abstract description 24
- 239000012790 adhesive layer Substances 0.000 claims abstract description 21
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000001301 oxygen Substances 0.000 claims abstract description 21
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 21
- 230000004888 barrier function Effects 0.000 claims abstract description 18
- 239000003292 glue Substances 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 36
- 239000011521 glass Substances 0.000 claims description 3
- 229920003023 plastic Polymers 0.000 claims description 3
- 239000004033 plastic Substances 0.000 claims description 3
- 241001062009 Indigofera Species 0.000 claims 1
- 239000010437 gem Substances 0.000 claims 1
- 229910001751 gemstone Inorganic materials 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 18
- 238000005538 encapsulation Methods 0.000 abstract description 8
- 238000005516 engineering process Methods 0.000 abstract description 5
- 230000000630 rising effect Effects 0.000 abstract description 4
- 230000008901 benefit Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 230000007774 longterm Effects 0.000 description 4
- 238000002493 microarray Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
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- 230000008859 change Effects 0.000 description 2
- 239000004567 concrete Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910001021 Ferroalloy Inorganic materials 0.000 description 1
- 206010019133 Hangover Diseases 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- ZTXONRUJVYXVTJ-UHFFFAOYSA-N chromium copper Chemical compound [Cr][Cu][Cr] ZTXONRUJVYXVTJ-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
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- 229910003460 diamond Inorganic materials 0.000 description 1
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- 230000005611 electricity Effects 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
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- 239000002159 nanocrystal Substances 0.000 description 1
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- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
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- 229910002027 silica gel Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The present invention relates to LED encapsulation technologies field, it is related to quantum dot layer reflecting LED packaging and light fixture, fluorescent adhesive layer is disposed with the top of LED chip, heat-insulated glue-line, quantum dot glue-line and barrier water oxygen layer, heat-insulated glue-line is provided between quantum dot glue-line and fluorescent adhesive layer, for protection quantum dot, heat-insulated glue-line is provided between quantum dot glue-line and fluorescent adhesive layer, quantum dot glue layer is provided with the reflecting material for reflection light simultaneously, the rising angle of LED chip can be improved by the reflection of reflecting material, make light can exhaling with greater angle, the reflection of reflecting material can be with center of dispersal light beam, make the distribution of light and more uniform, improve illuminating effect；Light fixture includes lamp socket, lamp stand, lamp holder and quantum dot layer reflecting LED packaging, and light fixture has above-mentioned advantage compared with prior art.
Description
Technical field
The present invention relates to LED encapsulation technologies field, in particular to quantum dot layer reflecting LED packaging and lamp
Tool.
Background technology
In recent years, as the back light unit of the liquid crystal display devices such as TV, monitor, LED use has been obtained rapidly
Development.LED has become the light source of various uses (for example, the light source of back light unit or the light for commonly lighting or illuminating
Source) main flow.By the way that the LED chip of semiconductor type is arranged in substrate and printing opacity tree is coated to semiconductor type LED chip
Fat, LED is used in the form of packaging part, and the light-transmissive resin for LED encapsulation piece can be included according to the output that will be realized
The phosphor of the desired color of light.
But, LED of the prior art color developing effect is poor.
Therefore it provides a kind of preferable quantum dot layer reflecting LED packaging of color developing effect and light fixture turn into this area
Technical staff's important technological problems to be solved.
The content of the invention
The first object of the present invention is to provide a kind of quantum dot layer reflecting LED packaging, to alleviate prior art
The technical problem of middle color developing effect difference.
A kind of quantum dot layer reflecting LED packaging that the present invention is provided, including substrate and on the substrate
LED chip；
Fluorescent adhesive layer, heat-insulated glue-line, quantum dot glue-line and barrier water oxygen layer are successively set on the LED chip from top to bottom
Top；
The quantum dot glue layer is provided with the reflecting material for reflection light.
Further, the upper surface of base plate is provided with the reflection sloping platform around the LED chip, and the reflection is oblique
Platform is in symmetry shape.
Further, the reflection sloping platform inwall is provided with concaveconvex structure, and the concaveconvex structure is surrounded on the LED chip
Around.
Further, it is provided with connected unit at the top of the reflection sloping platform.
Further, it is provided with transparent rack in the connected unit.
Further, the rack side wall is provided with mounting groove.
Further, it is provided with light-passing board in the mounting groove.
Further, the light-passing board is sapphire plate, glass or plastics.
Further, the barrier water oxygen layer outer wall is covered with layer of transparent glue-line.
The second object of the present invention is to provide a light fixture, to alleviate the technical problem of color developing effect difference in the prior art.
A kind of light fixture that the present invention is provided, including lamp socket, lamp stand, lamp holder and the quantum dot layer reflecting LED wrapper
Part；
The lamp holder is connected by the lamp stand with the lamp socket, and the quantum dot layer reflecting LED packaging is located at
Inside the lamp holder.
Beneficial effect：
A kind of quantum dot layer reflecting LED packaging that the present invention is provided, including substrate and the LED core on substrate
Piece, LED chip is arranged on substrate, and substrate is that LED chip is energized, and when in use, LED chip can produce larger heat
Amount, can quickly be excluded this heat by substrate, it is ensured that safety of the LED chip under long-term use, if LED chip is produced
Larger heat can not quickly exclude, it will LED chip is impacted, or even directly damages LED chip；To improve LED
Illuminating effect, in LED encapsulation structure, fluorescent adhesive layer, heat-insulated glue-line, quantum dot glue-line are disposed with the top of LED chip
With barrier water oxygen layer, fluorescent adhesive layer directly contacts with LED chip, and barrier water oxygen layer is located at top, wherein quantum dot glue-line and
Heat-insulated glue-line is provided between fluorescent adhesive layer, because LED chip is operationally, a large amount of heat energy can be distributed, and this partial heat to
Lower transmission can eliminate a part by substrate, and another part can be communicated up, and cause the quantum point failure in the quantum dot layer of upper strata,
Therefore it is protection quantum dot, heat-insulated glue-line is provided between quantum dot glue-line and fluorescent adhesive layer, by setting quantum dot layer, is carried
The illuminating effect of high LED；Meanwhile, quantum dot glue layer is provided with the reflecting material for reflection light, passes through reflection
The reflection of material can improve the rising angle of LED chip, make light can exhaling with greater angle, while pass through reflection
The reflection of material with center of dispersal light beam, can make the distribution of light and more uniform, improve color developing effect.
A kind of light fixture that the present invention is provided, including lamp socket, lamp stand, lamp holder and quantum dot layer reflecting LED packaging；Lamp
Head is connected by lamp stand with lamp socket, and quantum dot layer reflecting LED packaging is located inside lamp holder, and light fixture is compared with prior art
With above-mentioned advantage, no longer go to live in the household of one's in-laws on getting married and chat herein.
Brief description of the drawings
, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical scheme of the prior art
The accompanying drawing used required in embodiment or description of the prior art is briefly described, it should be apparent that, in describing below
Accompanying drawing is some embodiments of the present invention, for those of ordinary skill in the art, before creative work is not paid
Put, other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 is a kind of embodiment of quantum dot layer reflecting LED packaging provided in an embodiment of the present invention；
Fig. 2 is the another embodiment of quantum dot layer reflecting LED packaging provided in an embodiment of the present invention；
Fig. 3 is the another embodiment of quantum dot layer reflecting LED packaging provided in an embodiment of the present invention；
Fig. 4 is the another embodiment of quantum dot layer reflecting LED packaging provided in an embodiment of the present invention；
Fig. 5 is the another embodiment of quantum dot layer reflecting LED packaging provided in an embodiment of the present invention；
Fig. 6 is the another embodiment of quantum dot layer reflecting LED packaging provided in an embodiment of the present invention；
Fig. 7 is the another embodiment of quantum dot layer reflecting LED packaging provided in an embodiment of the present invention；
Fig. 8 is the another embodiment of quantum dot layer reflecting LED packaging provided in an embodiment of the present invention.
Icon：100- substrates；101- fluorescent adhesive layers；The heat-insulated glue-lines of 102-；103- quantum dot glue-lines；1031- reflects
Material；104- barrier water oxygen layers；200-LED chips；300- reflects sloping platform；301- concaveconvex structures；302- connected units；
400- transparent racks；500- light-passing boards；600- substratum transparents.
Embodiment
Technical scheme is clearly and completely described below in conjunction with accompanying drawing, it is clear that described implementation
Example is a part of embodiment of the invention, rather than whole embodiments.Based on the embodiment in the present invention, ordinary skill
The every other embodiment that personnel are obtained under the premise of creative work is not made, belongs to the scope of protection of the invention.
In the description of the invention, it is necessary to explanation, term " " center ", " on ", " under ", "left", "right", " vertical ",
The orientation or position relationship of the instruction such as " level ", " interior ", " outer " be based on orientation shown in the drawings or position relationship, merely to
Be easy to the description present invention and simplify description, rather than indicate or imply signified device or element must have specific orientation,
With specific azimuth configuration and operation, therefore it is not considered as limiting the invention.In addition, term " first ", " second ",
" the 3rd " is only used for describing purpose, and it is not intended that indicating or implying relative importance.
In the description of the invention, it is necessary to illustrate, unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " should be interpreted broadly, for example, it may be being fixedly connected or being detachably connected, or be integrally connected；Can
To be mechanical connection or electrical connection；Can be joined directly together, can also be indirectly connected to by intermediary, Ke Yishi
The connection of two element internals.For the ordinary skill in the art, with concrete condition above-mentioned term can be understood at this
Concrete meaning in invention.
The present invention is described in further detail below by specific embodiment and with reference to accompanying drawing.
Fig. 1 is a kind of embodiment of quantum dot layer reflecting LED packaging provided in an embodiment of the present invention；Fig. 2 is
The another embodiment of quantum dot layer reflecting LED packaging provided in an embodiment of the present invention；Fig. 3 is the embodiment of the present invention
The another embodiment of the quantum dot layer reflecting LED packaging of offer；Fig. 4 is quantum dot provided in an embodiment of the present invention
The another embodiment of layer reflecting LED packaging；Fig. 5 is quantum dot layer reflecting LED provided in an embodiment of the present invention
The another embodiment of packaging；Fig. 6 is another for quantum dot layer reflecting LED packaging provided in an embodiment of the present invention
A kind of embodiment；Fig. 7 is another embodiment party of quantum dot layer reflecting LED packaging provided in an embodiment of the present invention
Formula；Fig. 8 is the another embodiment of quantum dot layer reflecting LED packaging provided in an embodiment of the present invention.
It is a kind of quantum dot layer reflecting LED packaging provided in an embodiment of the present invention as Figure 1-Figure 8, including
Substrate 100 and the LED chip 200 on substrate 100；Fluorescent adhesive layer 101, heat-insulated glue-line 102, quantum dot glue-line 103 and resistance
Water proof oxygen layer 104 is successively set on the top of LED chip 200 from top to bottom；Heat-insulated glue-line 102 is internally provided with for reflection light
Reflecting material 1031.
A kind of quantum dot layer reflecting LED packaging provided in an embodiment of the present invention, including substrate 100 and located at substrate
LED chip 200 on 100, LED chip 200 is set on the substrate 100, and substrate 100 is that LED chip 200 is energized, and
When in use, LED chip 200 can produce larger heat, can quickly be excluded this heat by substrate 100, it is ensured that LED chip
200 safety under long-term use, if the larger heat that LED chip 200 is produced can not be excluded quickly, it will to LED chip
200 impact, or even directly damage LED chip 200；To improve in the illuminating effect of LED, LED encapsulation structure, LED core
The top of piece 200 is disposed with fluorescent adhesive layer 101, heat-insulated glue-line 102, quantum dot glue-line 103 and barrier water oxygen layer 104, glimmering
Optical cement layer 101 is directly contacted with LED chip 200, and barrier water oxygen layer 104 is located at top, wherein quantum dot glue-line 103 and fluorescence
Heat-insulated glue-line 102 is provided between glue-line 101, because LED chip 200 is operationally, a large amount of heat energy can be distributed, and this part is hot
Transmission can eliminate a part to amount by substrate 100 downwards, and another part can be communicated up, and cause the quantum in the quantum dot layer of upper strata
Point failure, therefore be protection quantum dot, heat-insulated glue-line 102 is provided between quantum dot glue-line 103 and fluorescent adhesive layer 101, is led to
Setting quantum dot layer is crossed, the illuminating effect of LED is improved；Meanwhile, it is internally provided with quantum dot glue-line 103 for reflection light
Reflecting material 1031, the rising angle of LED chip 200 can be improved by the reflection of reflecting material 1031, make light can be with
Greater angle is exhaled, while can make the distribution of light simultaneously with center of dispersal light beam by the reflection of reflecting material 1031
It is more uniform, improve color developing effect.
It should be noted that the reflecting material 1031 being arranged on inside quantum dot glue-line 103 can be arranged to reflect material,
Reflected by refractor confrontation light.
Pass through the reflecting material 1031 set in quantum dispensing layer 103, when LED chip 200 inspires light, light meeting
The very first time is radiated on reflecting material 1031, is then reflected by reflecting material 1031, intensive light can will be concentrated to divide equally
Open, after light is by quantum dispensing layer 103, intensive uneven light can become uniform, and irradiating angle is bigger, so as to improve
The illuminating effect of LED.
After reflection by reflecting material 1031, the irradiation of uniform light can be made on quantum dot glue-line 103, by equal
Even irradiation, can effectively improve color developing effect.
When setting fluorescent adhesive layer 101, heat-insulated glue-line 102, quantum dot glue-line 103 and barrier water oxygen layer 104, each layer is independent
Set, i.e., fluorescent adhesive layer 101 is firstly provided in LED chip 200, then sets heat-insulated glue-line 102, and quantum dispensing is then set again
Layer 103, finally sets barrier water oxygen layer 104, after wherein reflecting material 1031 is sufficiently mixed with quantum dot glue-line 103, with heat-insulated
Glue-line 102 is arranged on fluorescent adhesive layer 101.
Because water, oxygen influence larger to quanta point material, or even cause quanta point material to fail, therefore in quantum dispensing
Barrier water oxygen layer 104 is set on layer 103, by such setting quantum dot glue-line 103 can be made normally to use for a long time.
Specifically, barrier water oxygen glue is provided with fluorescent adhesive layer 101, heat-insulated glue-line 102 and quantum dot glue-line 103, with
Ensure the long-term normal work of quantum dot.
Wherein, stimulated whenever by light or electricity, quantum dot will send coloured light, and the color of light is by quantum dot
Composition material and size shape are determined, if general particle is smaller, can be absorbed long wave, particle is bigger, can be absorbed shortwave.It is 2 nanometers big
Small quantum dot, can absorb the red of long wave, shows blueness, and the quantum dot of 8 nanosizeds can absorb the blueness of shortwave, is in
Reveal red.This characteristic enables quantum dot to change the light color that light source is sent.Therefore using quantum dot glue-line 103-
Fluorescent adhesive layer 101-LED chips 200 can obtain default requirement.
Quantum dot is the nanocrystal of quasi-zero dimension simultaneously, and crystal grain diameter is between 2-10 nanometers, and quantum dot is by electrically or optically
Stimulation the high-quality pure monochromatic light of various different colours can be sent, therefore, it is possible to carry according to the diameter of quantum dot
High color developing effect.
Quantum dot has narrow and symmetrical fluorescence emission peak, and without hangover, color quantum point is not easy when using simultaneously
Existing spectrum is overlapped, it is possible to increase color developing effect.
Wherein, provided with built-in microarray cavity in heat-radiating substrate 100, the interior filling heat radiation working medium of built-in microarray cavity is interior
It is the built-in microarray cavity that hot channel is made to put microarray cavity, and pipe thickness is 5 μm.
Meanwhile, heat-radiating substrate 100 can be made of highly heat-conductive material, for example, by two kinds of diamond dusts according to quality
Ratio 7：3 with binding agent polyvinyl alcohol by volume 5：1 is well mixed, and is put into cold isostatic press, and pressurize 400MPa, pressurize
5min, removes binding agent under inert gas conditions, loads graphite jig with chromiumcopper powder parcel, vacuumizes 20min, pressurizes
25MPa and in the way of gradient increased temperature, is first heated to 600 DEG C with uniform programming rate 1min, is incubated 1h, then uniformly to rise
Warm speed 1min is heated to 1150 DEG C, is incubated 10min.Cooling procedure uses annealing process, is initially cooled to 600 DEG C, is incubated 5h, then
Natural cooling, finally the sampling demoulding.HIP sintering is carried out to sample again, 400MPa is forced into, temperature is risen to by room temperature
1200 DEG C, soaking time is 5h.Cooling procedure is handled using annealing process, is initially cooled to 600 DEG C, is incubated 6h, then natural cooling
Sample is made.Consistency is up to 99%, and thermal conductivity is 750W/ (mk).
Wherein, substrate 100 can be aluminum nitride ceramic substrate 100, aluminium oxide ceramic substrate 100, gold base 100, silver-based
Plate 100, copper base 100, iron substrate 100, billon substrate 100, silver alloy substrate 100, copper alloy substrate 100, ferroalloy base
Any of plate 100, PPA substrates 100, PCT substrates 100, HTN substrates 100, EMC substrates 100 or SMC substrates 100.
In the alternative of the present embodiment, the upper surface of substrate 100 is provided with the reflection sloping platform around LED chip 200
300, reflection sloping platform 300 is in symmetry shape.
The upper surface of substrate 100 is additionally provided with reflection sloping platform 300, and reflection sloping platform 300 is located at around LED chip 200, and reflection
The height of sloping platform 300 is 1-1.5 times of the height of LED chip 200.
When LED chip 200 works, the light excited can increase irradiating angle by reflecting sloping platform 300, improve out light efficiency
Rate, and change rising angle, so as to improve illuminating effect.
In the alternative of the present embodiment, the reflection inwall of sloping platform 300 is provided with concaveconvex structure 301, and concaveconvex structure 301 is surround
Around LED chip 200.
During the use of LED, it might have certain moisture and enter in LED packagings, the moisture meeting of entrance
The quality of LED chip 200 is influenceed, therefore the reflection inwall of sloping platform 300 is provided with concaveconvex structure 301, concaveconvex structure 301 is surrounded on
Around LED chip 200, the moisture of entrance can be deposited in concaveconvex structure 301.
Specifically, concaveconvex structure 301 can be groove structure, that is, reflect the inwall of sloping platform 300 and set fluted, and groove
Opening is smaller, the reflecting effect of the influence reflection sloping platform 300 of minimum degree.
In the alternative of the present embodiment, the top of reflection sloping platform 300 is provided with connected unit 302.
Connected unit 302 is provided with the top of the reflection outer wall of sloping platform 300, can be set by connected unit 302 in reflection sloping platform 300
Other assemblies.
Specifically, offering ladder platform at the top of the outer wall of reflection sloping platform 300, this ladder platform is connected unit 302, in connection
During miscellaneous part, connected unit 302 not only plays connection function, moreover it is possible to play a supporting role.
In the alternative of the present embodiment, transparent rack 400 is provided with connected unit 302.
Support fluorescent adhesive layer 101, heat-insulated glue-line 102, quantum dot glue-line 103 and barrier water oxygen are provided with connected unit 302
The transparent rack 400 of layer 104, transparent shape is set by support, improves light-out effect.
Wherein, fluorescent adhesive layer 101, heat-insulated glue-line 102, quantum dot glue-line 103 and barrier water oxygen layer 104 can be by transparent
Support 400 is supported, and can also then remove auxiliary mould bases in encapsulation process by aiding in mould bases to support.
Air port is offered on support simultaneously, when in use, extraneous air can be passed in and out by air port, anti-to quantum dot layer
Formula LED packagings are penetrated to be cooled.
In the alternative of the present embodiment, rack side wall is provided with mounting groove.
In actual use, miscellaneous part can be set on transparent rack 400, therefore be provided with rack side wall
Mounting groove.
Mounting groove can be arranged to the groove of the other forms such as neck, be as long as miscellaneous part can be installed by mounting groove
Can.
Light-passing board 500 is provided with the alternative of the present embodiment, in mounting groove.
To improve the quality of quantum dot LED, light-passing board 500 can be set in mounting groove, can be with by light-passing board 500
The light sent is more uniform.
In the alternative of the present embodiment, light-passing board 500 is sapphire plate, glass or plastics.
Because LED/light source is spot light, irradiate to be a bright spot afterwards, this amount point very little and very bright is very dazzling,
Be not easy to do room lighting light source, thus need with spread light-passing board 500 by spot light intralamellar part occur repeatedly refraction after it is right
Light is disperseed, and allows spot light to be changed into area source, and because the organosilicon material in material can allow shaped article to produce necessarily
Mist degree, can cover spot light, and the vaporific degree makes overall light efficiency become soft.
In the alternative of the present embodiment, barrier water oxygen 104 outer wall of layer are covered with layer of transparent glue-line 600.
For protection LED chip 200, fluorescent adhesive layer 101, heat-insulated glue-line 102, quantum dot glue-line 103 and barrier water oxygen layer
104 so that its can long-term work, in its outer wall covered with layer of transparent glue-line 600.
Substratum transparent 600 preferably can come quantum dot glue-line 103 and air exclusion, it is to avoid oxygen and water in air
Divide influence quantum dot performance, on the other hand, silica gel can be preferably heat-insulated, can better ensure that the service life of quantum dot.
A kind of light fixture provided in an embodiment of the present invention, including lamp socket, lamp stand, lamp holder and the encapsulation of quantum dot layer reflecting LED
Device；Lamp holder is connected by lamp stand with lamp socket, and quantum dot layer reflecting LED packaging is located inside lamp holder.
A kind of light fixture provided in an embodiment of the present invention, including lamp socket, lamp stand, lamp holder and the encapsulation of quantum dot layer reflecting LED
Device；Lamp holder is connected by lamp stand with lamp socket, quantum dot layer reflecting LED packaging be located at lamp holder inside, light fixture with it is existing
Technology, which is compared, has above-mentioned advantage, no longer goes to live in the household of one's in-laws on getting married and chats herein.
Finally it should be noted that：Various embodiments above is merely illustrative of the technical solution of the present invention, rather than its limitations；To the greatest extent
The present invention is described in detail with reference to foregoing embodiments for pipe, it will be understood by those within the art that：Its according to
The technical scheme described in foregoing embodiments can so be modified, or which part or all technical characteristic are entered
Row equivalent substitution；And these modifications or replacement, the essence of appropriate technical solution is departed from various embodiments of the present invention technology
The scope of scheme.
Claims (10)
1. a kind of quantum dot layer reflecting LED packaging, it is characterised in that including：Substrate and the LED on the substrate
Chip；
Fluorescent adhesive layer, heat-insulated glue-line, quantum dot glue-line and barrier water oxygen layer are successively set on the LED chip top from top to bottom
Portion；
The quantum dot glue layer is provided with the reflecting material for reflection light.
2. quantum dot layer reflecting LED packaging according to claim 1, it is characterised in that the upper surface of base plate
The reflection sloping platform around the LED chip is provided with, the reflection sloping platform is in symmetry shape.
3. quantum dot layer reflecting LED packaging according to claim 2, it is characterised in that in the reflection sloping platform
Wall is provided with concaveconvex structure, and the concaveconvex structure is surrounded on around the LED chip.
4. quantum dot layer reflecting LED packaging according to claim 2, it is characterised in that the reflection sloping platform top
Portion is provided with connected unit.
5. quantum dot layer reflecting LED packaging according to claim 4, it is characterised in that set in the connected unit
It is equipped with transparent rack.
6. quantum dot layer reflecting LED packaging according to claim 5, it is characterised in that the rack side wall is set
It is equipped with mounting groove.
7. quantum dot layer reflecting LED packaging according to claim 6, it is characterised in that set in the mounting groove
It is equipped with light-passing board.
8. quantum dot layer reflecting LED packaging according to claim 7, it is characterised in that the light-passing board is indigo plant
Jewel plate, glass or plastics.
9. quantum dot layer reflecting LED packaging according to claim 1, it is characterised in that the barrier water oxygen layer
Outer wall is covered with layer of transparent glue-line.
10. a kind of light fixture, it is characterised in that including the quantum dot described in lamp socket, lamp stand, lamp holder and claim any one of 1-9
Layer reflecting LED packaging；
The lamp holder is connected by the lamp stand with the lamp socket, and the quantum dot layer reflecting LED packaging is located at described
Inside lamp holder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710690772.6A CN107331764A (en) | 2017-08-14 | 2017-08-14 | Quantum dot layer reflecting LED packaging and light fixture |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710690772.6A CN107331764A (en) | 2017-08-14 | 2017-08-14 | Quantum dot layer reflecting LED packaging and light fixture |
Publications (1)
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| CN107331764A true CN107331764A (en) | 2017-11-07 |
Family
ID=60225957
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| Application Number | Title | Priority Date | Filing Date |
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| CN201710690772.6A Pending CN107331764A (en) | 2017-08-14 | 2017-08-14 | Quantum dot layer reflecting LED packaging and light fixture |
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| CN (1) | CN107331764A (en) |
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| CN107946447A (en) * | 2017-11-28 | 2018-04-20 | 西安科锐盛创新科技有限公司 | A kind of encapsulating structure of LED |
| CN107946443A (en) * | 2017-11-28 | 2018-04-20 | 西安科锐盛创新科技有限公司 | A kind of high-power LED encapsulation structure |
| CN107946440A (en) * | 2017-11-28 | 2018-04-20 | 西安科锐盛创新科技有限公司 | A kind of great power LED bilayer encapsulating structure |
| CN107946438A (en) * | 2017-11-28 | 2018-04-20 | 西安科锐盛创新科技有限公司 | A kind of great power LED bilayer hemisphere encapsulating structure |
| CN107946437A (en) * | 2017-11-28 | 2018-04-20 | 西安科锐盛创新科技有限公司 | A kind of encapsulating structure of LED |
| CN109256452A (en) * | 2018-11-19 | 2019-01-22 | 合肥惠科金扬科技有限公司 | The production method and LED component of LED component |
| CN113659058A (en) * | 2021-08-20 | 2021-11-16 | 京东方科技集团股份有限公司 | Light-emitting device, preparation method thereof and display device |
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| CN107946447A (en) * | 2017-11-28 | 2018-04-20 | 西安科锐盛创新科技有限公司 | A kind of encapsulating structure of LED |
| CN107946443A (en) * | 2017-11-28 | 2018-04-20 | 西安科锐盛创新科技有限公司 | A kind of high-power LED encapsulation structure |
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| CN113659058B (en) * | 2021-08-20 | 2023-10-20 | 京东方科技集团股份有限公司 | Light-emitting device, preparation method thereof and display device |
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