CN106653985A - Multi-layer packaged quantum dot LED structure - Google Patents
Multi-layer packaged quantum dot LED structure Download PDFInfo
- Publication number
- CN106653985A CN106653985A CN201710090755.9A CN201710090755A CN106653985A CN 106653985 A CN106653985 A CN 106653985A CN 201710090755 A CN201710090755 A CN 201710090755A CN 106653985 A CN106653985 A CN 106653985A
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- Prior art keywords
- quantum dot
- glue
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- layer
- led structure
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The present invention discloses a multi-layer packaged quantum dot LED structure. The structure comprises a carrier and an LED chip disposed on the carrier. A packaging rubber layer, a fluorescent powder rubber layer, a quantum dot rubber layer, and a water and oxygen barrier layer sequentially cover on LED chip. Firstly, fluorescent powder and quantum dots are divided into two layers, the fluorescent powder and the quantum dots are separated, so that the quantum dots and fluorescent powder absorb less light emitted by the quantum dots and the fluorescent powder; secondly, the packaging rubber layer is filled between the LED chip and the fluorescent powder rubber layer, so that less exciting light scattered toward the LED chip is absorbed by the LED chip, therefore, the luminous efficiency of the LED is improved; and the water and oxygen barrier layer is disposed outside the quantum dot rubber layer, so that the service life of the LED device is prolonged remarkably.
Description
Technical field
The present invention relates to show or lighting technical field, and in particular to a kind of quantum dot LED structure of multilayer encapsulation.
Background technology
Quantum dot（Quantum Dots）The particle diameter of material is typically in the range of between 1 ~ 10nm, because electronics and hole are by quantum
Confinement, continuous band structure becomes discrete energy level structure, therefore luminescent spectrum is very narrow（20-30nm）, the pure height of colourity, colour gamut
Extensively, can significantly more than NTSC（National Television Standards Committee）Gamut range（>100%）；
It is simultaneously little by colored filter optical absorption loss, it is capable of achieving low-power consumption and shows.Due to quantum confined effect, commaterial is only
Need to change the covering that quantum dot particle size is capable of achieving whole visible range.Can be by various various sizes of quantum dots
Mix according to a certain percentage, realize the natural light color similar to sunshine, obtain higher colour rendering index.Meanwhile, same material
Material can show the similar degeneration life-span, will be with more preferable color stability.There is quantum dot higher luminescence generated by light to imitate
Rate, the quantum efficiency in solution can reach more than 95%.Therefore, quanta point material has high quantum efficiency, aobvious finger height, colour gamut wide
The advantages of, while color saturation is improved with colour rendering index, moreover it is possible to reduce showing the power consumption with illumination, be display of future generation
With illumination key light conversion material.
Existing technology application is all based on blue-light LED chip, by red, green quanta point material be compounded in PET film or
In glass tube, then recombined white light is done with the existing display device based on blue-light LED chip.Quantum dot laminated film is in PET film
This process procedure is combined, product cost is higher.Glass tube product needed adds all multipaths on the production line of existing product,
And need to change the die size design of application product such as TV, for glass tube need significantly to change the existing production of replacement and
Installation process, indirect cost is high.
At present business-like white light LEDs are to excite yellow fluorescent powder using blue-light LED chip, transmit blue light and excite gold-tinted
It is mixed to get white light.Yet with lacking red color light component in spectrum, therefore traditional white light LEDs have, and colour rendering index is low, color
Undersaturated defect.Based on this, Chinese scholars propose to add new light to change material in conventional white light LED with industrial circle
Material --- quantum dot.Quantum dot is a kind of semi-conducting material, and size is between 2nm～20nm.Because the emission wavelength of quantum dot can
To regulate and control with size, and there are wide absorption spectra and narrow emission spectra, therefore while mixed with fluorescent material and the white light of quantum dot
LED has outstanding color developing, and color saturation is high.Its conventional encapsulating structure is by fluorescent powder colloid and quantum dot microsphere
Point is coated in LED chip after colloid uniformly mixes, and makes white light parts.Although the operating procedure of mixing spot printing is simple, also have
Defect, such as cannot individually adjust quantum dot or phosphor emission spectral energy in white light LEDs；And quantum dot is total to fluorescent material
Mixed absorb the repetition for causing light energy causes energy loss；Additionally, colloid is contacted with LED chip after blending, after also leading to
Light energy to scattering is absorbed by LED chip, reduces white light LEDs luminous efficiency.
The content of the invention
The technical problem to be solved is to provide a kind of quantum dot LED structure of multilayer encapsulation.
The technical solution used in the present invention is：
A kind of quantum dot LED structure of multilayer encapsulation, including carrier and the LED chip on carrier, in the LED chip according to
It is secondary to be covered with encapsulation glue-line, fluorescent material glue-line, quantum dot glue-line and intercept water oxygen layer.
Some preferred embodiment in, it is described encapsulation glue-line be by the one kind in anti-vulcanizing agent, silicon rubber, silicones
Or multiple material is made.
Some preferred embodiment in, it is described encapsulation glue-line thickness be 10-100 μm.
Some preferred embodiment in, the obstruct water oxygen layer includes intercepting water oxygen film and is covered in obstruct water oxygen
Obstruct water oxygen glue-line on film.
In the further preferred embodiment of such scheme, the obstruct water oxygen film is Kapton, PET
Film, PET are one or more in composite membrane, PMMA films or the polyvinyl alcohol film of base material.
Such scheme preferred embodiment in, it is described intercept water oxygen film thickness be 10-100 μm.
Such scheme preferred embodiment in, it is described intercept water oxygen glue-line material be silica gel, silicon rubber, silicon tree
One or more in fat, polymethyl methacrylate, polyvinyl alcohol or epoxy resin.
Some preferred embodiment in, the fluorescent material glue-line is that fluorescent material is scattered in transparent colloid and obtains,
The quantum dot glue-line is that quantum dot microsphere is scattered in transparent colloid and obtains, and the transparent colloid is silica gel, poly- methyl-prop
One or more of e pioic acid methyl ester, Merlon or polystyrene.
Some preferred embodiment in, one layer is additionally provided between the fluorescent material glue-line and the quantum dot glue-line thoroughly
Bright colloid layer.
Some preferred embodiment in, the carrier be poly- terephthalate p-phenylenediamine support.
The invention has the beneficial effects as follows：
The invention provides a kind of quantum dot LED structure of multilayer encapsulation, including carrier and the LED chip on carrier, institute
State and be covered with successively in LED chip encapsulation glue-line, fluorescent material glue-line, quantum dot glue-line and obstruct water oxygen layer；First, by fluorescent material with
Quantum dot is divided into two-layer, and fluorescent material and quantum dot are kept apart, and can effectively reduce quantum dot with fluorescent material to respective launching light
Absorption；Second, one layer of encapsulation glue-line is filled between LED chip and fluorescent material glue-line, it is possible to reduce to the direction of LED chip
The exciting light of scattering is absorbed by LED chip, and the luminous efficiency of LED is improved then；Arrange in the outer layer of quantum dot glue-line and intercept water
Oxygen layer, can increase substantially the working life of LED component.The quantum dot LED structure can be alternatively it for white light LED part
The LED component of his color, can match colors according to conventional LED principle of luminosity to LED chip, fluorescent material and quantum dot, obtain
The LED component of the color wanted.
Description of the drawings
Fig. 1 is the exploded perspective view of the quantum dot LED structure of the multilayer encapsulation of embodiment 1.
Fig. 2 is the front view of the quantum dot LED structure of the multilayer encapsulation of embodiment 1.
Fig. 3 is the left view of the quantum dot LED structure of the multilayer encapsulation of embodiment 1.
Fig. 4 is the top view of the quantum dot LED structure of the multilayer encapsulation of embodiment 1.
Fig. 5 is the front view of the quantum dot LED structure of the multilayer encapsulation of embodiment 2.
Specific embodiment
Embodiment 1：
Reference picture 1-4, Fig. 1 is the exploded perspective view of the quantum dot LED structure of the multilayer encapsulation of embodiment 1, and Fig. 2 is embodiment 1
Multilayer encapsulation quantum dot LED structure front view, Fig. 3 for embodiment 1 multilayer encapsulation quantum dot LED structure left view
Figure, Fig. 4 is the top view of the quantum dot LED structure of the multilayer encapsulation of embodiment 1, and Fig. 5 is the quantum of the multilayer encapsulation of embodiment 2
The front view of point LED structure, in order to preferably show that structure is pellucidity in structure Fig. 1, present embodiments provides one kind many
The quantum spot white light LED structure of layer encapsulation, including carrier 1 and the blue-light LED chip on carrier 12, the LED blue lights core
The formal dress of piece 2, upside-down mounting are vertically loaded on the carrier 1, and in the present embodiment, the carrier 1 has at least one inner chamber body 3,
In the just inner chamber body 3 loaded on the carrier 1 of the blue-light LED chip 2, the carrier 1 is poly- terephthalate p-phenylenediamine support,
Its surface reflectivity is more than 70%, and the inner chamber body 3 can be the bowl on support.It is covered with envelope on the blue-light LED chip 2 successively
Dress glue-line 4, fluorescent material glue-line 5, quantum dot glue-line 6 and obstruct water oxygen layer.It is transparent that the fluorescent material glue-line 5 is that fluorescent material is scattered in
Obtain in colloid, the transparent colloid is one kind or many of silica gel, polymethyl methacrylate, Merlon or polystyrene
Kind, the thickness of the fluorescent material glue-line 5 is 0.05mm, and the mass fraction of the fluorescent material in the fluorescent material glue-line 5 is 5%, fluorescence
The emission wavelength of powder is 450-600nm.The quantum dot glue-line 6 is that quantum dot microsphere is scattered in transparent colloid and obtains, institute
It is to state transparent colloid silica gel, polymethyl methacrylate, Merlon or polystyrene one or more, the quantum dispensing
The thickness of layer 6 is 2mm, and the quantum dot microsphere size is changeable, and average particle size range is 0.1-100 μm, the quantum dot
The mass fraction of quantum dot microsphere described in glue-line 6 is 1%, and the scope of emission wavelength is 500-750nm.By fluorescent material and quantum
Point is divided into two-layer, and fluorescent material and quantum dot are kept apart, and can effectively reduce quantum dot and suction of the fluorescent material to respective launching light
Receive.The encapsulation glue-line 4 is made up of one or more material in anti-vulcanizing agent, silicon rubber, silicones.In the present embodiment
In, the encapsulation glue-line 4 is anti-sulfuration oxidant layer, and the anti-vulcanizing agent is the anti-sulfuration that fluorine resin or other markets can be purchased
Agent.One layer of encapsulation glue-line 4 is filled between LED chip 2 and fluorescent material glue-line 5, it is possible to reduce scatter to the direction of LED chip 2
Exciting light absorbed by LED chip 2, then improve LED luminous efficiency.The transparent colloid is silica gel, polymethylacrylic acid
One or more of methyl esters, Merlon or polystyrene.The thickness of the encapsulation glue-line 4 is 10 μm.The obstruct water oxygen layer
Including the obstruct water oxygen glue-line 8 for intercepting water oxygen film 7 and be covered on obstruct water oxygen film 7.The obstruct water oxygen film 7 is poly-
Imide membrane, PET film, PET are one or more in composite membrane, PMMA films or the polyvinyl alcohol film of base material,
It is PET film that water oxygen film 7 is intercepted described in the present embodiment, and the thickness of the obstruct water oxygen film 7 is 100 μm, the obstruct
Water oxygen film 7 covers the upper surface of the inner chamber body 3 of the carrier 1.It is described intercept water oxygen glue-line 8 material be silica gel, silicon rubber,
One or more in silicones, polymethyl methacrylate, polyvinyl alcohol or epoxy resin, in the present embodiment, the resistance
The material of water proof oxygen glue-line 8 is silicon rubber.
The preparation method of the quantum spot white light LED structure of above-mentioned multilayer encapsulation is comprised the following steps：By the formal dress of LED chip 2
In the inner chamber body 3 of carrier 1, anti-vulcanizing agent such as fluorine resin is dissolved in solvent, point is coated in the inner chamber body 3 of the carrier 1,
Make anti-vulcanizing agent cover LED chip 2, after solvent volatilization, form one layer of encapsulation glue-line 4, then carrier 1 is put into firing equipment,
Normal temperature or 100 DEG C of heating 10min, solidify anti-vulcanizing agent；Fluorescent powder colloid point is coated in the carrier 1 for obtaining before again
In cavity 3, formed and cover the fluorescent material glue-line 5 of encapsulation glue-line 4, then carrier 1 is put into firing equipment, 150 °C of heating 1 are little
When, solidify fluorescent powder colloid；Quantum dot microsphere colloid point is coated in the inner chamber body 3 of the carrier 1 for obtaining before, is covered
The quantum dot glue-line 6 of fluorescent material glue-line 5, then carrier 1 is put into firing equipment, 115 °C are heated 10 hours, make quantum dot microsphere
Colloid solidifies, and completes the encapsulation of white light LEDs；It is attached to water oxygen film 7 is intercepted on quantum dot colloid layer 6 using chip mounter；Again will
Water oxygen glue is intercepted in the inner chamber body 3 of the carrier 1 for obtaining before, quantum dispensing layer 6 is covered and is intercepted water oxygen film 7, then will be carried
Body 1 is put into firing equipment, and 65 DEG C are heated 3 hours, intercept water oxygen adhesive curing, forms the fixed obstruct water for intercepting water oxygen film 7
Oxygen glue-line 8.
Embodiment 2：
The present embodiment is substantially the same manner as Example 1, and difference is：The LED blue chips 2 upside-down mounting on the carrier 1,
The encapsulation glue-line 4 is silastic-layer, and the obstruct water oxygen film 7 is PMMA films, and the thickness of the obstruct water oxygen film 7 is
10 μm, the thickness of the fluorescent material glue-line 5 is 3mm, and the mass fraction of the fluorescent material in the fluorescent material glue-line 5 is 50%, described
Quantum dot glue-line 6 includes red quantum point glue-line I9 and green quantum dispensing layer II10, the wavelength of red quantum point 600nm ~
Between 700nm, the wavelength of green quantum dot is between 500 ~ 555nm, and the thickness of the quantum dot glue-line 6 is 0.05mm, described
The mass fraction of quantum dot microsphere described in quantum dot glue-line 6 is 10%, and the thickness of the encapsulation glue-line 4 is 100 μm.It is described glimmering
Layer of transparent colloid layer 11 is additionally provided between light arogel layer 5 and the quantum dot glue-line 6.The material of the transparent colloid layer 11 is
One or more of silica gel, polymethyl methacrylate, Merlon or polystyrene.The encapsulation glue-line 4, the fluorescent material
Glue-line 5 and the quantum dot glue-line 6 can be prepared using common process such as spraying, spin coating, mould preparations.
Claims (10)
1. a kind of quantum dot LED structure of multilayer encapsulation, including carrier and the LED chip on carrier, it is characterised in that institute
State and be covered with successively in LED chip encapsulation glue-line, fluorescent material glue-line, quantum dot glue-line and obstruct water oxygen layer.
2. the quantum dot LED structure of multilayer encapsulation according to claim 1, it is characterised in that the encapsulation glue-line be by
One or more material in anti-vulcanizing agent, silicon rubber, silicones is made.
3. the quantum dot LED structure of multilayer encapsulation according to claim 1, it is characterised in that the thickness of the encapsulation glue-line
Spend for 10-100 μm.
4. the quantum dot LED structure of multilayer encapsulation according to claim 1, it is characterised in that the obstruct water oxygen layer bag
Include the obstruct water oxygen glue-line for intercepting water oxygen film and being covered on obstruct water oxygen film.
5. the quantum dot LED structure of multilayer encapsulation according to claim 4, it is characterised in that the obstruct water oxygen film
For the one kind or many in Kapton, PET film, the composite membrane that PET is base material, PMMA films or polyvinyl alcohol film
Kind.
6. the quantum dot LED structure of the multilayer encapsulation according to claim 4 or 5, it is characterised in that the obstruct water oxygen is thin
The thickness of film is 10-100 μm.
7. the quantum dot LED structure of the multilayer encapsulation according to claim 4 or 5, it is characterised in that the obstruct water oxygen glue
The material of layer is the one kind or many in silica gel, silicon rubber, silicones, polymethyl methacrylate, polyvinyl alcohol or epoxy resin
Kind.
8. the quantum dot LED structure of the multilayer encapsulation according to any one of claim 1-5, it is characterised in that the fluorescence
Arogel layer is that fluorescent material is scattered in transparent colloid and obtains, and the quantum dot glue-line is that quantum dot microsphere is scattered in transparent colloid
In obtain, the transparent colloid is silica gel, polymethyl methacrylate, Merlon or polystyrene one or more.
9. the quantum dot LED structure of the multilayer encapsulation according to any one of claim 1-5, it is characterised in that the fluorescence
Layer of transparent colloid layer is additionally provided between arogel layer and the quantum dot glue-line.
10. the quantum dot LED structure of the multilayer encapsulation according to any one of claim 1-5, it is characterised in that the carrier
For poly- terephthalate p-phenylenediamine support.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710090755.9A CN106653985A (en) | 2017-02-20 | 2017-02-20 | Multi-layer packaged quantum dot LED structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710090755.9A CN106653985A (en) | 2017-02-20 | 2017-02-20 | Multi-layer packaged quantum dot LED structure |
Publications (1)
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| CN106653985A true CN106653985A (en) | 2017-05-10 |
Family
ID=58845623
Family Applications (1)
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|---|---|---|---|
| CN201710090755.9A Pending CN106653985A (en) | 2017-02-20 | 2017-02-20 | Multi-layer packaged quantum dot LED structure |
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107331764A (en) * | 2017-08-14 | 2017-11-07 | 天津中环电子照明科技有限公司 | Quantum dot layer reflecting LED packaging and light fixture |
| CN107394028A (en) * | 2017-08-14 | 2017-11-24 | 天津中环电子照明科技有限公司 | Quantum dot LED and light fixture |
| CN107507901A (en) * | 2017-07-31 | 2017-12-22 | 南方科技大学 | A kind of LED light electrical part based on surface phasmon enhancing and preparation method thereof |
| CN107565003A (en) * | 2017-07-31 | 2018-01-09 | 深圳市华星光电技术有限公司 | Quantum dot LED encapsulation structure |
| CN108110120A (en) * | 2017-12-08 | 2018-06-01 | 青岛海信电器股份有限公司 | Quantum dot LED and display device |
| CN108321150A (en) * | 2017-12-21 | 2018-07-24 | 维沃移动通信有限公司 | A kind of preparation method of light source and light source |
| CN108461610A (en) * | 2018-02-06 | 2018-08-28 | 惠州市华星光电技术有限公司 | A kind of quantum dot LED and preparation method |
| CN108511582A (en) * | 2018-05-07 | 2018-09-07 | 华南理工大学 | A kind of LED coatings of multilayer encapsulation quantum dot and preparation method thereof |
| CN109003967A (en) * | 2018-07-27 | 2018-12-14 | 青岛海信电器股份有限公司 | A kind of lamp plate, backlight module and display device |
| CN109449276A (en) * | 2018-09-28 | 2019-03-08 | 苏州星烁纳米科技有限公司 | Light emitting device |
| WO2020015432A1 (en) * | 2018-07-20 | 2020-01-23 | 纳晶科技股份有限公司 | Light emitting device and manufacturing method thereof |
| WO2020063485A1 (en) * | 2018-09-27 | 2020-04-02 | 纳晶科技股份有限公司 | Manufacturing process of light-emitting part and light-emitting part |
| CN114141933A (en) * | 2021-11-16 | 2022-03-04 | 武汉华星光电半导体显示技术有限公司 | Quantum dot film, display back plate and manufacturing method of display back plate |
| US11508882B2 (en) | 2017-11-07 | 2022-11-22 | Hisense Visual Technology Co., Ltd. | Quantum dot LED, manufacturing method thereof and display device |
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Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107565003B (en) * | 2017-07-31 | 2019-04-30 | 深圳市华星光电技术有限公司 | Quantum dot LED encapsulation structure |
| CN107507901A (en) * | 2017-07-31 | 2017-12-22 | 南方科技大学 | A kind of LED light electrical part based on surface phasmon enhancing and preparation method thereof |
| CN107565003A (en) * | 2017-07-31 | 2018-01-09 | 深圳市华星光电技术有限公司 | Quantum dot LED encapsulation structure |
| CN107394028A (en) * | 2017-08-14 | 2017-11-24 | 天津中环电子照明科技有限公司 | Quantum dot LED and light fixture |
| CN107331764A (en) * | 2017-08-14 | 2017-11-07 | 天津中环电子照明科技有限公司 | Quantum dot layer reflecting LED packaging and light fixture |
| US11508882B2 (en) | 2017-11-07 | 2022-11-22 | Hisense Visual Technology Co., Ltd. | Quantum dot LED, manufacturing method thereof and display device |
| CN108110120A (en) * | 2017-12-08 | 2018-06-01 | 青岛海信电器股份有限公司 | Quantum dot LED and display device |
| CN108321150A (en) * | 2017-12-21 | 2018-07-24 | 维沃移动通信有限公司 | A kind of preparation method of light source and light source |
| CN108461610A (en) * | 2018-02-06 | 2018-08-28 | 惠州市华星光电技术有限公司 | A kind of quantum dot LED and preparation method |
| CN108511582A (en) * | 2018-05-07 | 2018-09-07 | 华南理工大学 | A kind of LED coatings of multilayer encapsulation quantum dot and preparation method thereof |
| CN110739385A (en) * | 2018-07-20 | 2020-01-31 | 纳晶科技股份有限公司 | Light emitting device and method of manufacturing the same |
| WO2020015432A1 (en) * | 2018-07-20 | 2020-01-23 | 纳晶科技股份有限公司 | Light emitting device and manufacturing method thereof |
| TWI781319B (en) * | 2018-07-20 | 2022-10-21 | 大陸商納晶科技股份有限公司 | Light-emitting device and method of making the same |
| CN109003967B (en) * | 2018-07-27 | 2021-06-01 | 海信视像科技股份有限公司 | Lamp panel, backlight module and display device |
| CN109003967A (en) * | 2018-07-27 | 2018-12-14 | 青岛海信电器股份有限公司 | A kind of lamp plate, backlight module and display device |
| WO2020063485A1 (en) * | 2018-09-27 | 2020-04-02 | 纳晶科技股份有限公司 | Manufacturing process of light-emitting part and light-emitting part |
| CN109449276A (en) * | 2018-09-28 | 2019-03-08 | 苏州星烁纳米科技有限公司 | Light emitting device |
| CN114141933A (en) * | 2021-11-16 | 2022-03-04 | 武汉华星光电半导体显示技术有限公司 | Quantum dot film, display back plate and manufacturing method of display back plate |
| CN114141933B (en) * | 2021-11-16 | 2023-08-01 | 武汉华星光电半导体显示技术有限公司 | Quantum dot film, display backboard and manufacturing method thereof |
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Application publication date: 20170510 |