CN105789416B - A kind of layer stereo grid luminescent layer preparation process and LED light emitting device - Google Patents
A kind of layer stereo grid luminescent layer preparation process and LED light emitting device Download PDFInfo
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- CN105789416B CN105789416B CN201610291148.4A CN201610291148A CN105789416B CN 105789416 B CN105789416 B CN 105789416B CN 201610291148 A CN201610291148 A CN 201610291148A CN 105789416 B CN105789416 B CN 105789416B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
Abstract
The invention discloses a kind of layer stereo grid luminescent layer preparation processes and LED light emitting device, technique to include：Coating luminescent material, heating, the transparent Heat Conduction Material of filling, heating are fully cured；LED light emitting device includes：Holder (1), chip (2), layer stereo grid luminescent layer (3), sealing structure (4), transparent Heat Conduction Material (5), protection materials (6).The present invention uses layer stereo grid luminescent layer preparation process, can effectively avoid the mutual absorption of a variety of materials；By transparent Heat Conduction Material and waterproof oxygen coating and inorganic sealing lens, multiple protective can be carried out effectively to layer surface, especially the quantum dot light emitting material of shining, have the function that stable color dot, maintain light efficiency, extend the service life；By filling the material that thang-kng is good, heat conduction is good between grid, not only excitation light is efficiently used, but also device entirety heat can simultaneously reduced, promotes light efficiency, extend the service life, obtain long-term reliability.
Description
Technical field
The invention belongs to technology of semiconductor illumination application field, more particularly to a kind of luminescent layer preparation process and LED shine
Device.
Background technology
LED light source realizes that the mode of white light mainly has following three kinds as illuminating product of new generation：One is by RGB
Three-primary color LED chip package generates white light together, and second is to excite yellow fluorescent powder or red green fluorescence by blue chip
Powder forms white light, the third is to excite RGB three-color phosphors to realize white light using ultraviolet chip.But due to current chip,
There is certain deficiency in the limitation of fluorescent powder and packaging technology, three kinds of modes：Three kinds of chips with driving electricity in method one
Stream, photochromic variation and attenuation are different, it is difficult to it is unified, and manufacturing cost is higher；Method second exist light efficiency,
Aobvious finger is low, and fluorescent powder grain is unevenly distributed, and exciting light energy loss and color drift are serious, the high big dispensing of colour gamut colloid viscosity
The problems such as difficult；Method three then because light-emitting phosphor efficiency is low, mixes the problems such as powder is difficult, and there are the leakages of ultraviolet shortwave, and
The hidden danger such as aging life-span is short.The mode of main application method two achievees the purpose that white light in LED commodity productions, and how will be glimmering
Light powder, which is uniformly mixed, improves its utilization ratio, how to provide that the spatial distribution of fluorescent powder improves utilization of the fluorescent powder to exciting light
Rate, it is wider to obtain spectral region, it shows and refers to high, the LED of photochromic stabilization is problem urgently to be resolved hurrily in production process.
In recent years, the development of quantum dot made it be widely used in the new high-tech industries such as life science, semiconductor devices,
To make up or substitute deficiency of the rare earth doping fluorescent powder in energy level distribution and luminous efficiency.Quantum dot is by a limited number of original
Son composition, three dimensions are nanoscale, have wider excitation spectrum and relatively narrow emission spectrum, and can pass through change
The size dimension of quantum dot controls the emission peak positions of emission spectrum.Meanwhile larger Stokes shift is but also quantum
The emission spectrum and excitation spectrum of point are not easy to be overlapped.
It is better than the above-mentioned property of fluorescent powder for quantum dot, quantum dot replacing whole or partial alternative is used in LED encapsulation
Fluorescent powder is mixed or is fabricated to multiple-layer stacked form as luminescent layer, to pass through the addition of various sizes of quantum dot
Obtain the LED of high, aobvious high, the photochromic stabilization of finger of spectral region.But since there are the mutual absorption of spectrum between fluorescent powder, quantum
Spectrum mutually absorbs between point, the mutual absorption of spectrum between fluorescent powder quantum dot so that and the exciting light of chip cannot be used effectively,
Cause the waste of fluorescent powder, quantum dot and energy, the photochromic effect that actual displayed goes out bad.
Invention content
The purpose of the present invention is：A kind of layer stereo grid luminescent layer preparation process and LED light emitting device are provided, by not
With the addition of the quantum dot and fluorescent powder of size, layer stereo grid luminescent layer is built, obtains spectral region height, aobvious finger height, light
Colour-stable, long lifespan LED light emitting device.
The technical scheme is that：A kind of layer stereo grid luminescent layer preparation process, includes the following steps：
A. luminescent material is coated in the form of aperture plate inside chip surface and bowl；
B. heating makes luminescent material precuring inside chip surface and bowl；
C. the transparent Heat Conduction Material of transparent, thang-kng, good heat conductivity is filled between aperture plate gap, highly with luminescent material grid
Lattice height is identical or slightly higher；
D. heating makes the transparent Heat Conduction Material precuring of filling；
E. step A to step D is repeated, until filling up inside bowl；
F. heating makes luminescent material and transparent Heat Conduction Material are fully cured inside bowl.
Further, the luminescent material in the step A is by fluorescent powder and organic material or inorganic material or organic nothing
Machine composite material mixes.
Further, the luminescent material in the step A is quantum dot and organic material or inorganic material or organic nothing
Machine composite material mixes.
Further, the luminescent material in the step A be fluorescent powder and quantum dot mixing after, then with organic material or
Inorganic material or organic/inorganic composite material mix.
Further, coating method is dispensing, spraying or silk screen printing in the step A.
Further, the transparent Heat Conduction Material in the step C be transparent, thang-kng, the good material of heat conductivility, it is excellent
Select transparent silica gel, resin or aluminium oxide；Transparent Heat Conduction Material can also include a small amount of luminescent material.
Further, the aperture plate form in the step A is：Every layer of arrangement can be equally distributed array or
The array of non-uniform Distribution, each single layer uniformly or the aperture plate height of non-uniform Distribution can according to use luminescent material it is different into
Row adjustment, difference identical can also may be present in the grid height of same layer, be spaced unlimited between each layer aperture plate, and adjacent two layers aperture plate angle is more than
Equal to 0 ° and less than or equal to 90 °, when the number of plies is more than or equal to 2, overall structure occurs with three-dimensional grid.
Further, luminescent material used in each region of each single layer coated in the form of aperture plate in the step A
(3) can be same material or non-same material, grain size can be relatively uniform or inconsistent, the luminous material of coated single layer
Material (3) can be uniformly distributed or non-uniform Distribution is in organic material or inorganic material or organic/inorganic composite material.
A kind of LED light emitter, it includes：Chip, the layer stereo grid luminescent layer obtained using above-mentioned technique；The core
Piece is for exciting the layer stereo grid luminescent layer to shine.
Further, further include holder, the holder is used to support the protection chip and layer stereo grid shines
Layer.
Further, the holder is the bowl with certain depth, and there is good thermal conduction characteristic, holder bowl to cut
Face shape is rectangle, trapezoidal or irregular shape.
Further, the coat of metal is Ag, Cu, Au or other alloy layer in the bowl.
Further, the luminescence peak for the exciting light that the chip generates is blue light, purple light or ultraviolet band.
Further, the chip structure is vertical structure or horizontal structure.
Further, the layer stereo grid shines layer surface coated with protection materials, and the protection materials are used for
Protect influence of the water oxygen for luminescent material.
Further, further include the sealing structure being arranged on the protection materials surface, the sealing structure uses stone
English plate glass or quartz glass lens, for improving spatial light color uniformity and protecting water oxygen for the shadow of luminescent material
It rings.
The present invention can effectively avoid the mutual absorption of a variety of materials, especially red light quantum point material from sending out its all band
The spectral absorption of luminescent material；For high colour gamut product, a variety of fluorescent materials of big concentration can be used to reach high colour gamut purpose,
This can cause fluorescence adhesiveness excessive, and glue amount is not easy to control, is not easy dispensing；Make that only list need to be mixed in silica gel using this kind of structure
Kind fluorescent material, greatly reduces fluorescence adhesiveness, keeps glue amount more easy to control, facilitate the progress of gluing process；For quantum dot
The main reason for material, water oxygen is its light decay, this kind of structure can be with by silica gel and waterproof oxygen coating and inorganic sealing lens
Multiple protective effectively is carried out in quantum dot light emitting layer surface, has the function that stable color dot, maintains light efficiency, extends the service life；It provides
A kind of more sizes, how photochromic mixed powder pattern so that the fluorescent material of different-grain diameter and photochromic material is effectively mixed, and is kept away
The layering light extraction caused by the mixing of different-grain diameter powder and energy dissipation are exempted from, a kind of realization side are provided for the colour developing of full spectrum height
Case；By filling the material that thang-kng is good, heat conduction is good between grid, not only so that excitation light can effectively be utilized but also simultaneously can
So that device entirety heat reduces, light efficiency is promoted, extends the service life, obtains long-term reliability.
Description of the drawings
Fig. 1 is layer stereo grid luminescent layer vertical view of the present invention；
Fig. 2 is the structural schematic diagram that the present invention uses protection materials；
Fig. 3 is that the present invention forms the structural schematic diagram closely sealed using quartzy plate glass；
Fig. 4 is that the present invention forms the structural schematic diagram closely sealed using quartz glass lens；
Fig. 5 is the unsupported schematic diagram of the present invention.
1- holders, 2- chips, 3- luminescent materials, 4- sealing structures, the transparent Heat Conduction Materials of 5-, 6- protection materials
Specific implementation mode
Embodiment 1：Referring to Fig. 1 to Fig. 5, a kind of layer stereo grid luminescent layer preparation process includes the following steps：
A. by luminescent material 3 by aperture plate form by be coated in a manner of dispensing, spraying or silk screen printing etc. 2 surface of chip and
Inside bowl；The luminescent material 3 be fluorescent powder and quantum dot mixing after, then with organic material or inorganic material or organic-inorganic
Composite material mixes；The aperture plate form is that every layer of arrangement can be equally distributed array or non-uniform Distribution
Array, each single layer is uniformly or the aperture plate height of non-uniform Distribution can be same according to using the difference of luminescent material 3 to be adjusted
Difference identical can also may be present in the grid height of layer, be spaced unlimited between each layer aperture plate, and adjacent two layers aperture plate angle is more than or equal to 0 ° and small
In equal to 90 °, when the number of plies is more than or equal to 2, overall structure occurs with three-dimensional grid；Each single layer coated in the form of aperture plate
Luminescent material used in each region can be same material or non-same material, and grain size can be relatively uniform or inconsistent,
The luminescent material of coated single layer can be uniformly distributed or non-uniform Distribution is in organic material or inorganic material or organic-inorganic
In composite material；
B. heating makes 3 precuring of luminescent material inside 2 surface of chip and bowl；
C. the transparent Heat Conduction Material 5 of transparent, thang-kng, good heat conductivity is filled between aperture plate gap, highly with luminescent material 3
Grid height is identical or slightly higher；The transparent Heat Conduction Material 5 is transparent, thang-kng, the good material of heat conductivility, preferably clear silicon
Glue, resin or aluminium oxide, transparent Heat Conduction Material 5 can also include a small amount of luminescent material 3；
D. heating makes 5 precuring of transparent Heat Conduction Material of filling inside 2 surface of chip and bowl；
E. step A to step D is repeated, until filling up inside bowl；
F. heating makes luminescent material 3 and transparent Heat Conduction Material 5 are fully cured inside bowl.
Embodiment 2：Referring to Fig. 1 to Fig. 5, a kind of LED light emitting device, it is prepared using above-mentioned layer stereo grid luminescent layer
Technique, including：Holder 1, chip 2, layer stereo grid luminescent layer, sealing structure 4, transparent Heat Conduction Material 5, protection materials 6.
The holder 1 is used to support the protection chip 2, the layer stereo grid luminescent layer；The holder 1 be with
The bowl of certain depth, it is rectangle, trapezoidal or irregular shape to have good thermal conduction characteristic, holder bowl cross sectional shape；Institute
It is Ag, Cu, Au or other alloy layers to state the coat of metal in bowl.
For the chip 2 for exciting the layer stereo grid luminescent layer to shine, luminescence peak is blue light, purple light or ultraviolet
Wave band；2 structure of the chip is vertical structure or horizontal structure.
Layer stereo grid luminescent layer is the layer stereo grid luminescent layer that 1 preparation process of embodiment obtains.
The layer stereo grid shines layer surface coated with protection materials 6, and the protection materials 6 are for protecting water oxygen pair
In the influence of luminescent material 3.
The sealing structure 4 on 6 surface of the protection materials is set, it is saturating using quartzy plate glass or quartz glass
Mirror, for improving spatial light color uniformity and protecting influence of the water oxygen for luminescent material 3.
Claims (10)
1. a kind of layer stereo grid luminescent layer preparation process, which is characterized in that include the following steps：
A. by luminescent material（3）Chip is coated in the form of aperture plate（2）Inside surface and bowl；
B. heating makes luminescent material（3）Precuring is in chip（2）Inside surface and bowl；
C. the transparent Heat Conduction Material of transparent, thang-kng, good heat conductivity is filled between aperture plate gap（5）, height and luminescent material（3）
Aperture plate height is identical or slightly higher；
D. heating makes the transparent Heat Conduction Material of filling（5）Precuring；
E. step A to step D is repeated, until filling up inside bowl；
F. heating makes luminescent material（3）With transparent Heat Conduction Material（5）It is fully cured inside bowl.
2. a kind of layer stereo grid luminescent layer preparation process as described in claim 1, it is characterised in that：In the step A
Luminescent material（3）It is mixed by fluorescent powder and organic material or inorganic material or organic/inorganic composite material.
3. a kind of layer stereo grid luminescent layer preparation process as described in claim 1, it is characterised in that：In the step A
Luminescent material（3）It is mixed for quantum dot and organic material or inorganic material or organic/inorganic composite material.
4. a kind of layer stereo grid luminescent layer preparation process as described in claim 1, it is characterised in that：In the step A
Luminescent material（3）For fluorescent powder and quantum dot mixing after, then with organic material or inorganic material or organic/inorganic composite material
It mixes.
5. a kind of layer stereo grid luminescent layer preparation process as described in claim 1, it is characterised in that：In the step A
Coating method is dispensing, spraying or silk screen printing.
6. a kind of layer stereo grid luminescent layer preparation process as described in claim 1, it is characterised in that：In the step C
Transparent Heat Conduction Material（5）For transparent, thang-kng, the good material of heat conductivility, or include a small amount of luminescent material（3）.
7. a kind of layer stereo grid luminescent layer preparation process as described in claim 1, it is characterised in that：In the step A
Aperture plate form be：Every layer of arrangement is equally distributed array or the array of non-uniform Distribution, and each single layer is uniform or non-equal
The aperture plate height of even distribution is according to using luminescent material（3）Difference be adjusted, the grid height of same layer identical can also may be present
Difference, is spaced between each layer aperture plate unlimited, and adjacent two layers aperture plate angle is more than or equal to 0 ° and is less than or equal to 90 °, when the number of plies is more than etc.
Overall structure occurs with three-dimensional grid when 2.
8. a kind of layer stereo grid luminescent layer preparation process as claimed in claim 7, it is characterised in that：In the step A
Luminescent material used in each region of each single layer coated in the form of aperture plate（3）For same material or non-same material, grain
Diameter is relatively uniform or inconsistent, the luminescent material of coated single layer（3）Be uniformly distributed or non-uniform Distribution in organic material or
In inorganic material or organic/inorganic composite material.
9. a kind of LED light emitting device, including：Chip（2）, it is characterised in that：It uses any type work in claim 1 to 8
The layer stereo grid luminescent layer that skill obtains；The chip（2）It is described for exciting the layer stereo grid luminescent layer to shine
Layer stereo grid shines layer surface coated with protection materials（6）, the protection materials（6）For protecting water oxygen for the material that shines
Material（3）Influence, including be arranged in the protection materials（6）The sealing structure on surface（4）, the sealing structure（4）Use stone
English plate glass or quartz glass lens, for improving spatial light color uniformity and protection water oxygen for luminescent material（3）'s
It influences, the chip（2）Structure is vertical structure or horizontal structure, further includes holder（1）, the holder（1）It is used to support guarantor
Protect the chip and layer stereo grid luminescent layer, the holder（1）For the bowl with certain depth, there is good heat conduction
Characteristic, holder bowl cross sectional shape are rectangle, trapezoidal or irregular shape, in the bowl coat of metal be Ag, Cu, Au or its
His alloy layer.
10. a kind of LED light emitting device as claimed in claim 9, it is characterised in that：The chip（2）The exciting light of generation
Luminescence peak is blue light, purple light or ultraviolet band.
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| CN201610291148.4A CN105789416B (en) | 2016-05-05 | 2016-05-05 | A kind of layer stereo grid luminescent layer preparation process and LED light emitting device |
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| CN201610291148.4A CN105789416B (en) | 2016-05-05 | 2016-05-05 | A kind of layer stereo grid luminescent layer preparation process and LED light emitting device |
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| CN105789416A CN105789416A (en) | 2016-07-20 |
| CN105789416B true CN105789416B (en) | 2018-09-11 |
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| US11888095B2 (en) * | 2017-10-13 | 2024-01-30 | Merck Patent Gmbh | Manufacturing process for an optoelectronic device |
| CN110082959B (en) * | 2019-04-30 | 2021-11-16 | 京东方科技集团股份有限公司 | Fluorescent film, preparation method thereof and lamp strip |
| CN112993142B (en) * | 2021-02-08 | 2021-11-30 | 华中科技大学 | Three-dimensional high-thermal-conductivity white light LED and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102376849A (en) * | 2010-08-05 | 2012-03-14 | 斯坦雷电气株式会社 | Semiconductor light emitting device |
| CN104300074A (en) * | 2013-07-19 | 2015-01-21 | 深圳大学 | Phosphor coating method and LED device |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102376849A (en) * | 2010-08-05 | 2012-03-14 | 斯坦雷电气株式会社 | Semiconductor light emitting device |
| CN104300074A (en) * | 2013-07-19 | 2015-01-21 | 深圳大学 | Phosphor coating method and LED device |
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Effective date of registration: 20220810 Address after: 100176 2nd floor, building 3, courtyard 58, jinghaiwu Road, Beijing Economic and Technological Development Zone, Daxing District, Beijing Patentee after: Beijing Yimei New Technology Co.,Ltd. Address before: 100176, No. 4, 2 building, Huilong Sen science and Technology Park, 99 Chuang fourteen street, Daxing District economic and Technological Development Zone, Beijing. Patentee before: SHINEON (BEIJING) TECHNOLOGY Co.,Ltd. |
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