CN207009474U - A kind of quantum dot LED structure of multilayer encapsulation - Google Patents
A kind of quantum dot LED structure of multilayer encapsulation Download PDFInfo
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- CN207009474U CN207009474U CN201720151356.4U CN201720151356U CN207009474U CN 207009474 U CN207009474 U CN 207009474U CN 201720151356 U CN201720151356 U CN 201720151356U CN 207009474 U CN207009474 U CN 207009474U
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Abstract
The utility model discloses a kind of quantum dot LED structure of multilayer encapsulation, including carrier and the LED chip on carrier, encapsulation glue-line, fluorescent material glue-line, quantum dot glue-line and barrier water oxygen layer are covered with the LED chip successively；First, fluorescent material and quantum dot are divided into two layers, fluorescent material and quantum dot is kept apart, can effectively reduce quantum dot and absorption of the fluorescent material to each spontaneous emission light；Second, one layer of encapsulation glue-line is filled between LED chip and fluorescent material glue-line, it is possible to reduce the exciting light scattered to the direction of LED chip is absorbed by LED chip, then improves LED luminous efficiency；Barrier water oxygen layer is set in the outer layer of quantum dot glue-line, the working life of LED component can be increased substantially.
Description
Technical field
It the utility model is related to display or lighting technical field, and in particular to a kind of quantum dot LED structure of multilayer encapsulation.
Background technology
Quantum dot（Quantum Dots）The particle diameter of material is typically in the range of between 1 ~ 10nm, because electronics and hole are by quantum
Confinement, continuous band structure becomes discrete energy level structure, therefore luminescent spectrum is very narrow（20-30nm）, the pure height of colourity, colour gamut
Extensively, can be significantly more than NTSC（National Television Standards Committee）Gamut range（>100%）；
It is simultaneously small by colored filter optical absorption loss, low-power consumption can be achieved and show.Due to quantum confined effect, same material is only
Need to change the covering that whole visible range can be achieved in quantum dot particle size.Can be by a variety of various sizes of quantum dots
Mix according to a certain percentage, realize the natural light color similar to sunshine, obtain higher colour rendering index.Meanwhile same material
Material can show the similar degeneration life-span, will have more preferable color stability.There is quantum dot higher luminescence generated by light to imitate
Rate, the quantum efficiency in solution can reach more than 95%.Therefore, quanta point material has quantum efficiency height, aobvious finger is high, colour gamut is wide
The advantages that, while color saturation is improved with colour rendering index, moreover it is possible to reduce the power consumption of display and illumination, be display of future generation
With illumination key light conversion material.
Existing technology application is all based on blue-light LED chip, by red, green quanta point material be compounded in PET film or
In glass tube, then with the existing display device based on blue-light LED chip do recombined white light.Quantum dot laminated film is in PET film
This compound process procedure, product cost are higher.Glass tube product needs to add all multipaths on the production line of existing product,
And need to change the die size design of application product such as TV, need significantly to change for glass tube replace existing production with
Installation process, indirect cost are high.
Current commercialized white light LEDs are to excite yellow fluorescent powder using blue-light LED chip, and transmission blue light is with exciting gold-tinted
It is mixed to get white light.Yet with lacking red color light component in spectrum, therefore traditional white light LEDs have that colour rendering index is low, color
Undersaturated defect.Based on this, domestic and foreign scholars propose to add new light conversion material in conventional white light LED with industrial circle
Material --- quantum dot.Quantum dot is a kind of semi-conducting material, and size is between 2nm~20nm.Because the emission wavelength of quantum dot can
To regulate and control with size, and there are wide absorption spectra and narrow emission spectra, therefore simultaneously mixed with fluorescent material and the white light of quantum dot
LED has outstanding color developing, color saturation height.Its conventional encapsulating structure is by fluorescent powder colloid and quantum dot microsphere
Point is coated in LED chip after colloid uniformly mixes, and white light parts are made.Although the operating procedure for mixing spot printing is simple, also have
Defect, for example can not individually adjust quantum dot or phosphor emission spectral energy in white light LEDs；And quantum dot is total to fluorescent material
Mixed absorb the repetition for causing light energy causes energy loss；In addition, colloid contacts with LED chip after blending, after also leading to
Absorbed to the light energy of scattering by LED chip, reduce white light LEDs luminous efficiency.
Utility model content
Technical problem to be solved in the utility model is to provide a kind of quantum dot LED structure of multilayer encapsulation.
Technical solution adopted in the utility model is：
A kind of quantum dot LED structure of multilayer encapsulation, including carrier and the LED chip on carrier, the LED chip
On be covered with successively encapsulation glue-line, fluorescent material glue-line, quantum dot glue-line and barrier water oxygen layer.
In some preferred embodiments, the barrier water oxygen layer includes barrier water oxygen film and is covered in barrier water oxygen
Barrier water oxygen glue-line on film.
In the preferred embodiment of such scheme, the barrier water oxygen film be Kapton, PET film,
PET is the one or more in the composite membrane, PMMA films or polyvinyl alcohol film of base material.
In the preferred embodiment of such scheme, the thickness of the barrier water oxygen film is 10-100 μm.
In some preferred embodiments, the LED chip formal dress, upside-down mounting or vertically loaded on the carrier.
In some preferred embodiments, the thickness of the encapsulation glue-line is 10-100 μm.
In some preferred embodiments, one layer is additionally provided between the fluorescent material glue-line and the quantum dot glue-line thoroughly
Bright colloid layer.
In some preferred embodiments, the carrier is poly- terephthalate p-phenylenediamine support.
The beneficial effects of the utility model are：
The utility model provides a kind of quantum dot LED structure of multilayer encapsulation, including carrier and the LED on carrier
Chip, encapsulation glue-line, fluorescent material glue-line, quantum dot glue-line and barrier water oxygen layer are covered with the LED chip successively；First, will
Fluorescent material is divided into two layers with quantum dot, and fluorescent material and quantum dot are kept apart, can effectively reduce quantum dot with fluorescent material to each
The absorption of spontaneous emission light；Second, one layer of encapsulation glue-line is filled between LED chip and fluorescent material glue-line, it is possible to reduce to LED core
The exciting light of the direction scattering of piece is absorbed by LED chip, then improves LED luminous efficiency；Set in the outer layer of quantum dot glue-line
Barrier water oxygen layer is put, the working life of LED component can be increased substantially.The quantum dot LED structure can be white light LED part
Or the LED component of other colors, LED chip, fluorescent material and quantum dot can be carried out according to the LED principle of luminosity of routine
Color matching, obtains the LED component of desired color.
Brief description of the drawings
Fig. 1 is the exploded perspective view of the quantum dot LED structure of the multilayer encapsulation of embodiment 1.
Fig. 2 is the front view of the quantum dot LED structure of the multilayer encapsulation of embodiment 1.
Fig. 3 is the left view of the quantum dot LED structure of the multilayer encapsulation of embodiment 1.
Fig. 4 is the top view of the quantum dot LED structure of the multilayer encapsulation of embodiment 1.
Fig. 5 is the front view of the quantum dot LED structure of the multilayer encapsulation of embodiment 2.
Embodiment
Embodiment 1：
Reference picture 1-4, Fig. 1 are the exploded perspective view of the quantum dot LED structure of the multilayer encapsulation of embodiment 1, and Fig. 2 is implementation
The front view of the quantum dot LED structure of the multilayer encapsulation of example 1, Fig. 3 are the quantum dot LED structure of the multilayer encapsulation of embodiment 1
Left view, Fig. 4 are the top view of the quantum dot LED structure of the multilayer encapsulation of embodiment 1, and Fig. 5 is the multilayer encapsulation of embodiment 2
The front view of quantum dot LED structure, in order to preferably show, structure is pellucidity in structure chart 1, present embodiments provides one
The quantum spot white light LED structure of kind multilayer encapsulation, including carrier 1 and the blue-light LED chip 2 on carrier 1, the LED are blue
The formal dress of optical chip 2, upside-down mounting are vertically loaded on the carrier 1, and in the present embodiment, the carrier 1 has at least one inner chamber
Body 3, for the blue-light LED chip 2 just in the inner chamber body 3 loaded on the carrier 1, the carrier 1 is poly- terephthalate p-phenylenediamine
Support, its surface reflectivity are more than 70%, and the inner chamber body 3 can be the bowl on support.Covered successively on the blue-light LED chip 2
There are encapsulation glue-line 4, fluorescent material glue-line 5, quantum dot glue-line 6 and barrier water oxygen layer.The fluorescent material glue-line 5 is that fluorescent material is scattered in
Obtained in transparent colloid, the transparent colloid is one kind of silica gel, polymethyl methacrylate, makrolon or polystyrene
Or it is a variety of, the thickness of the fluorescent material glue-line 5 is 0.05mm, and the mass fraction of the fluorescent material in the fluorescent material glue-line 5 is 5%,
The emission wavelength of fluorescent material is 450-600nm.The quantum dot glue-line 6 is that quantum dot microsphere is scattered in transparent colloid and obtained
, the transparent colloid is the one or more of silica gel, polymethyl methacrylate, makrolon or polystyrene, the amount
The thickness of son point glue-line 6 is 2mm, and the quantum dot microsphere size is changeable, and average particle size range is 0.1-100 μm, described
The mass fraction of quantum dot microsphere described in quantum dot glue-line 6 is 1%, and the scope of emission wavelength is 500-750nm.By fluorescent material
It is divided into two layers with quantum dot, fluorescent material and quantum dot is kept apart, can effectively reduces quantum dot with fluorescent material to each spontaneous emission
The absorption of light.The encapsulation glue-line 4 is made up of one or more materials in anti-vulcanizing agent, silicon rubber, silicones.In this reality
Apply in example, the encapsulation glue-line 4 be anti-vulcanization oxidant layer, and the anti-vulcanizing agent is fluorine resin or what other markets can be purchased prevents
Vulcanizing agent.One layer of encapsulation glue-line 4 is filled between LED chip 2 and fluorescent material glue-line 5, it is possible to reduce to the direction of LED chip 2
The exciting light of scattering is absorbed by LED chip 2, then improves LED luminous efficiency.The transparent colloid is silica gel, poly- methyl-prop
The one or more of e pioic acid methyl ester, makrolon or polystyrene.The thickness of the encapsulation glue-line 4 is 10 μm.The barrier water
The barrier water oxygen glue-line 8 that oxygen layer includes barrier water oxygen film 7 and is covered on barrier water oxygen film 7.The barrier water oxygen film 7
For one kind or more in composite membrane, PMMA films or polyvinyl alcohol film that Kapton, PET film, PET are base material
Kind, the barrier water oxygen film 7 is PET film in the present embodiment, and the thickness of the barrier water oxygen film 7 is 100 μm, described
Barrier water oxygen film 7 covers the upper surface of the inner chamber body 3 of the carrier 1.The material of the barrier water oxygen glue-line 8 is silica gel, silicon
One or more in rubber, silicones, polymethyl methacrylate, polyvinyl alcohol or epoxy resin, in the present embodiment, institute
The material for stating barrier water oxygen glue-line 8 is silicon rubber.
The preparation method of the quantum spot white light LED structure of above-mentioned multilayer encapsulation comprises the following steps：By the formal dress of LED chip 2
In the inner chamber body 3 of carrier 1, anti-vulcanizing agent such as fluorine resin are dissolved in solvent, point is coated in the inner chamber body 3 of the carrier 1,
Make anti-vulcanizing agent covering LED chip 2, after solvent volatilization, form one layer of encapsulation glue-line 4, then carrier 1 is put into firing equipment,
Normal temperature or 100 DEG C of heating 10min, solidify anti-vulcanizing agent；Fluorescent powder colloid point is coated in the carrier 1 obtained before again
In cavity 3, the fluorescent material glue-line 5 of covering encapsulation glue-line 4 is formed, then carrier 1 is put into firing equipment, 150 °C of heating 1 are small
When, solidify fluorescent powder colloid；Quantum dot microsphere colloid point is coated in the inner chamber body 3 of the carrier 1 obtained before, covered
The quantum dot glue-line 6 of fluorescent material glue-line 5, then carrier 1 is put into firing equipment, 115 °C are heated 10 hours, make quantum dot microsphere
Colloid solidifies, and completes the encapsulation of white light LEDs；It is attached to using chip mounter by water oxygen film 7 is obstructed on quantum dot colloid layer 6；Again will
Water oxygen glue is obstructed in the inner chamber body 3 of the carrier 1 obtained before, covering quantum dispensing layer 6 and barrier water oxygen film 7, then will carry
Body 1 is put into firing equipment, and 65 DEG C are heated 3 hours, obstruct water oxygen adhesive curing, forms the barrier water of fixed barrier water oxygen film 7
Oxygen glue-line 8.
Embodiment 2：
The present embodiment is substantially the same manner as Example 1, and difference is：The upside-down mounting of LED blue chips 2 is in the carrier
On 1, the encapsulation glue-line 4 is silastic-layer, and the barrier water oxygen film 7 is PMMA films, the thickness of the barrier water oxygen film 7
To spend for 10 μm, the thickness of the fluorescent material glue-line 5 is 3mm, and the mass fraction of the fluorescent material in the fluorescent material glue-line 5 is 50%,
The quantum dot glue-line 6 includes red quantum dot glue-line I9 and green quantum dispensing layer II10, the wavelength of red quantum dot exist
Between 600nm ~ 700nm, between 500 ~ 555nm, the thickness of the quantum dot glue-line 6 is the wavelength of green quantum dot
0.05mm, the mass fraction of quantum dot microsphere described in the quantum dot glue-line 6 are 10%, and the thickness of the encapsulation glue-line 4 is
100μm.Layer of transparent colloid layer 11 is additionally provided between the fluorescent material glue-line 5 and the quantum dot glue-line 6.The transparent colloid
The material of layer 11 is the one or more of silica gel, polymethyl methacrylate, makrolon or polystyrene.The encapsulation glue-line
4th, the fluorescent material glue-line 5 and the quantum dot glue-line 6 can use the common process such as spraying, spin coating, mould preparation to prepare.
Claims (7)
1. a kind of quantum dot LED structure of multilayer encapsulation, including carrier and the LED chip on carrier, it is characterised in that institute
State and be covered with encapsulation glue-line, fluorescent material glue-line, quantum dot glue-line and barrier water oxygen layer in LED chip successively, the barrier water oxygen layer
Including barrier water oxygen film and the barrier water oxygen glue-line being covered on barrier water oxygen film.
2. the quantum dot LED structure of multilayer encapsulation according to claim 1, it is characterised in that the barrier water oxygen film
For one kind or more in composite membrane, PMMA films or polyvinyl alcohol film that Kapton, PET film, PET are base material
Kind.
3. the quantum dot LED structure of multilayer encapsulation according to claim 1 or 2, it is characterised in that the barrier water oxygen is thin
The thickness of film is 10-100 μm.
4. the quantum dot LED structure of multilayer encapsulation according to claim 1, it is characterised in that the LED chip formal dress,
Upside-down mounting is vertically loaded on the carrier.
5. the quantum dot LED structure of multilayer encapsulation according to claim 1, it is characterised in that the thickness of the encapsulation glue-line
Spend for 10-100 μm.
6. the quantum dot LED structure of the multilayer encapsulation according to claim 1,2 or 4, it is characterised in that the phosphor gel
Layer of transparent colloid layer is additionally provided between layer and the quantum dot glue-line.
7. the quantum dot LED structure of the multilayer encapsulation according to claim 1,2 or 4, it is characterised in that the carrier is poly-
Terephthalate p-phenylenediamine support.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201720151356.4U CN207009474U (en) | 2017-02-20 | 2017-02-20 | A kind of quantum dot LED structure of multilayer encapsulation |
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| CN201720151356.4U CN207009474U (en) | 2017-02-20 | 2017-02-20 | A kind of quantum dot LED structure of multilayer encapsulation |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106653985A (en) * | 2017-02-20 | 2017-05-10 | 天津市中环量子科技有限公司 | Multi-layer packaged quantum dot LED structure |
| CN108735879A (en) * | 2018-07-26 | 2018-11-02 | 易美芯光（北京）科技有限公司 | A kind of SMD encapsulating structures containing quantum dot |
| CN108767082A (en) * | 2018-04-28 | 2018-11-06 | 安徽芯瑞达科技股份有限公司 | A kind of heat-insulated quantum dot LED lamp bead of polystyrene and preparation method thereof |
-
2017
- 2017-02-20 CN CN201720151356.4U patent/CN207009474U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106653985A (en) * | 2017-02-20 | 2017-05-10 | 天津市中环量子科技有限公司 | Multi-layer packaged quantum dot LED structure |
| CN108767082A (en) * | 2018-04-28 | 2018-11-06 | 安徽芯瑞达科技股份有限公司 | A kind of heat-insulated quantum dot LED lamp bead of polystyrene and preparation method thereof |
| CN108735879A (en) * | 2018-07-26 | 2018-11-02 | 易美芯光（北京）科技有限公司 | A kind of SMD encapsulating structures containing quantum dot |
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210426 Address after: 518000 Kaihaoda Building, No. 1 Tongsheng Community Industrial Park Road, Dalang Street, Longhua District, Shenzhen City, Guangdong Province, 1309, 13th floor Patentee after: SHENZHEN SITAN TECHNOLOGY Co.,Ltd. Address before: 300380 room 320, office building, Xiqing Industrial Zone Management Committee, Xiqing District, Tianjin Patentee before: Tianjin Zhonghuan Quantum Tech Co.,Ltd. |