TWM341939U - White light emitting diode module - Google Patents

White light emitting diode module Download PDF

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Publication number
TWM341939U
TWM341939U TW97206810U TW97206810U TWM341939U TW M341939 U TWM341939 U TW M341939U TW 97206810 U TW97206810 U TW 97206810U TW 97206810 U TW97206810 U TW 97206810U TW M341939 U TWM341939 U TW M341939U
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Taiwan
Prior art keywords
light
emitting diode
light emitting
white light
substrate
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TW97206810U
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Chinese (zh)
Inventor
Yu-Ping Lin
Chih-Yuan Chen
Pei-Ju Lai
Ding-He Chen
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Kismart Corp
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Priority to TW97206810U priority Critical patent/TWM341939U/en
Publication of TWM341939U publication Critical patent/TWM341939U/en

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Abstract

The white LED module includes a packaging housing having a containing chamber, an LED chipset disposed in the containing chamber, and a shared flat wavelength-converting structure disposed on the packaging housing. The LED chipset could illuminate an original light with at least two wavelengths. The original light may be diffused with the shared flat wavelength-converting structure and may be partially converted into a converted light with the shared flat wavelength-converting structure. The converted light and the original light are mixed to form a white light.

Description

M341939 八、新型說明: 【新型所屬之技術領域】 本新型是有關於一種白光發光二極體,且特別是有 關於一種具有高演色性的白光發光二極體。 【先前技術】 發光二極體(Light Emitting Diode ; LED)是一種微小 的固態(Solid-State)光源,兼具體積小、耐震性佳、省電、 壽命長、顏色多樣' 無需使用水銀等優點,且可配合各 種新興應用需求,已成為日常生活中隨處可見的光源。 與傳統之白熾燈泡及螢光燈相比,發光二極體可兼具有 省能與環保的特性,已廣泛的應用在各種照明領域之中。 傳統的白光發光二極體多是在封裝膠體内混入螢光 此封t膠體可填滿發光二極體的腔體,腔體中之g 光發光二極體晶片可發出藍光,並激發如YAG螢光粉以 放出黃光,藍光與黃光可混合以得到白光。然而,此種 做法所知到之演色性(c〇l〇r rendering property)較低,因 =,亦有在封裝膠體中混入紅色螢光粉或是綠色螢光粉 等,藉以增加白光發光二極體的演色性,但是相較於黃 色榮光私’紅色及綠色螢光粉的效率較低,抗濕性及耐 、、、=不彳土。此外,發光二極體晶片所產生的熱量會細 由4馨導^ 4M 21 、卫 與發光二極體晶片直接接觸的封裝膠體與其 中之榮光粉,因而影響螢光粉的效率與其壽命。 另種白光發光二極體是將紅藍綠三色晶片共同封 5 M341939 所放出之波長形成白光。但是由於 不易控制,因此在邊緣處常會造成 其色彩的差異亦較大。 【新型内容】 ==新型的目的就是在提供—種白光發光 杈組之結構,藉以提高其演色性。 位體M341939 VIII. New description: [New technical field] The present invention relates to a white light emitting diode, and in particular to a white light emitting diode having high color rendering. [Prior Art] Light Emitting Diode (LED) is a tiny solid-state light source with small specific capacity, good shock resistance, power saving, long life and variety of colors. No need to use mercury. And with a variety of emerging application needs, has become a visible source of light in everyday life. Compared with traditional incandescent bulbs and fluorescent lamps, LEDs can be both energy-saving and environmentally friendly, and have been widely used in various lighting fields. Conventional white light-emitting diodes are mostly mixed with fluorescent light in the encapsulant. The sealant can fill the cavity of the light-emitting diode. The light-emitting diode chip in the cavity can emit blue light and excites, for example, YAG. The phosphor powder emits yellow light, and the blue light and the yellow light can be mixed to obtain white light. However, this method knows that the color rendering property (c〇l〇r rendering property) is low, because =, there is also mixed red fluorescent powder or green fluorescent powder in the encapsulant to increase the white light emission. The color rendering of the polar body, but compared to the yellow glory private 'red and green fluorescent powder' is less efficient, moisture resistance and resistance, and = no bauxite. In addition, the heat generated by the LED chip is finely divided by the encapsulant colloid which is in direct contact with the LED chip and the glory powder which is in direct contact with the LED chip, thereby affecting the efficiency and lifetime of the phosphor powder. Another type of white light emitting diode is a white light that is emitted by a red, blue, and green three-color chip that is commonly sealed by a wavelength of 5 M341939. However, because it is not easy to control, the color difference often occurs at the edge. [New content] == The new purpose is to provide a structure of white light-emitting 杈 group, in order to improve its color rendering. Body

:照::型一較佳實施例,提出一種白光發光二極 體模包έ 一封裝殼體、-發光二極體晶片組、盘一 共旱之平面波長轉換結構。封裝殼體包含有—容置* 腔’發光:極體晶片組可設置在容置空腔中,以放^ 初始光’此初始光包含至少兩波長。共享之平面 換結構可設置於封裝殼體上,以均勾地擴散初始光。复 中共子之平面波長轉換結構可轉換一部分之初始光為二 轉換光,初始光與轉換光再混合形成一白光。According to a preferred embodiment, a white light emitting diode package is provided, a package housing, a light emitting diode chip set, and a flat-wavelength conversion structure of the disk. The package housing includes a accommodating cavity. The polar body chip set can be disposed in the accommodating cavity to discharge the initial light. The initial light includes at least two wavelengths. The shared planar replacement structure can be placed on the package housing to uniformly diffuse the initial light. The planar wavelength conversion structure of the complex neutrons converts a portion of the initial light into two converted lights, and the initial light and the converted light are remixed to form a white light.

裝,以利用三色晶片 三色晶片的放光位置 放光不均勻的情形, 、初始光可包含一可見光或一不可見光。共享之平面 波長轉換結構包含一基板,以及塗佈於基板上之一波長 轉換材料。波長轉換材料包含有鱗粉、感光材質、榮光 色轉換媒介、有機錯合物材質、發光顏料、量子 材:、量子線為底材質、量子味為底材質或上述材質之 組合。基板係為一透明基板,基板之材料可包含玻璃、 石英、聚曱基丙烯酸甲酯、聚苯乙烯、甲苯乙烯,或聚 碳酸酯。 共享之平面波長轉換結構可均勻地擴散發光二極體 6 M341939 曰曰片組所發出之初始光,並轉換一部分之初始光為轉換 光、’二由共享之平面波長轉換結構轉換之轉換光可用以 補充原初始光所缺少的波段,並和通過 轉換結構之,始光混合,以形成具有較廣泛:段的” 光,進而提高白光發光二極體模組的演色性。 【實施方式】 以下將以圖式及詳細說明清楚說明本新型之精神, 任何所屬技術領域中具有通常知識者在瞭解本新型之較 佳實施例後’當可由本新型所教示之技術,加以改變及 修飾,其並不脫離本新型之精神與範圍。 參照第1圖,其係繪示本新型之白光發光二極體模 組一較佳實施例之剖面圖。白光發光二極體模組ι〇〇中 包含2 一封裝殼體110、一發光二極體晶片組12〇,以及 一共旱之平面波長轉換結構13〇。封裝殼體11〇包含有一 容置空腔112,發光二極體晶片組12〇可設置在容置空腔 112之中。共旱之平面波長轉換結構130可設置在封裝殼 體no上,以封住容置空腔112。 發光二極體晶片組12〇中可包含有複數個發光二極 體晶片。本實施例中,發光二極體晶片組120可包含有 第&光一極體晶片120a、一第二發光二極體晶片 120b’與一第三發光二極體晶片i2〇c。第一發光二極體 晶片120a可發出具有第一波長之第一光,第二發光二極 體晶請b可發出具有第二波長之第二光,而第三發光 7 M341939 二極體晶片12〇c可發出具有第三波長之第三光,盆中第 -波長、第二波長’與第三波長較佳地為各不相同。 發光二極體晶片組! 2〇所發出一 ^ 與第三光可為可見光或不可見光 "弟一光、 一 飞不τ見先。舉例而言,第一發光 二,體晶片120a發出之f_ ^為波長在他①至 彻麵之間的藍光,第二發光二極體mb所發出之第二 長在“Ο"11至55°·之間的綠光,第三發光二 極體曰曰片版所發出之第三光可為波長在_nm至 63〇請之間的紅光。第—發光二極體晶片咖、第二發 先-極體晶片mb,與第三發光二極體晶片12 輕 性排列在容置空腔112之中。 為線 共享之平面波長轉換結構13〇係設置 極體模組100的發光面上 毛先一 出之第一光、第1 “先—極體晶片組120所發 轉換結構13。,並光可射向共享之平面波長 地擴散。共享之;長轉換結構130均勾 ⑴散佈在其中面波長轉換結構130可包含有勞光粉 發二130中的螢光粉132可激 四波長之第先,並將此部分之第-光轉換為具有第 四波長之弟四光,其中 、负罘 長。接著,第丄 弟四波長不同於第一波 共享之平面::光、第二光、第三光,與第四光可經由 第四光之第又轉^結構130均勾混合’以形成白光。 長與第三光之^ 佳地為不同於第二光之第二波 波長。舉例而言,本實施例令之螢光 8 M341939 ::二了為早一種類之粉末,⑹YAG’由YAG粉末所激 弟四光可為波長在56〇nm至600nm之間的黃光。 在其他實施例令’第四光之第四波長可與第二波長 或弟二波長重疊或部份重疊,共享之平面波長轉換結構 中之螢光粉132可為多種鱗粉的混合物,舉例而古, 瑩光粉132可包含等,而由營絲 132所激發之第四光可為黃光、紅光,及綠光的混合物。 螢光粉132之組成可包含YAG、SrS、SrGa2S4' U2〇3 Υ2〇3等’螢光粉132可配合需求選擇合適的粉 末,如需用以激發可見光或是不可見光。 螢光粉132所激發之第四光可補充原發光二極體晶 片組120所缺少的波段,因此,透過本新型中之共享之 平面波長轉換結構,本新型中由第一光、第二光、第二Mounting to utilize the three-color wafer The position of the light-emitting position of the three-color wafer is uneven, and the initial light may include a visible light or an invisible light. The shared plane wavelength conversion structure comprises a substrate and a wavelength converting material coated on the substrate. The wavelength conversion material comprises a scale powder, a photosensitive material, a glory color conversion medium, an organic complex material, a luminescent pigment, a quantum material: a quantum wire as a base material, a quantum flavor as a base material, or a combination of the above materials. The substrate is a transparent substrate, and the material of the substrate may comprise glass, quartz, polymethyl methacrylate, polystyrene, styrene, or polycarbonate. The shared planar wavelength conversion structure uniformly diffuses the initial light emitted by the light-emitting diode 6 M341939 chip group, and converts a part of the initial light into converted light, and the second converted light converted by the shared planar wavelength conversion structure is available. In order to supplement the wavelength band which is lacking in the original initial light, and to mix with the structure, the light is mixed to form a light having a wider range of segments, thereby improving the color rendering of the white light emitting diode module. The spirit of the present invention will be clearly described in the drawings and the detailed description, and those of ordinary skill in the art will be able to change and modify the technology as taught by the present invention after understanding the preferred embodiment of the present invention. Without departing from the spirit and scope of the present invention, reference is made to Fig. 1 which is a cross-sectional view showing a preferred embodiment of the white light emitting diode module of the present invention. The white light emitting diode module includes 2 a package housing 110, a light emitting diode chip set 12A, and a common dry planar wavelength conversion structure 13A. The package housing 11A includes a receiving cavity 112, The LED array 12A can be disposed in the accommodating cavity 112. The coplanar planar wavelength conversion structure 130 can be disposed on the package housing no to enclose the accommodating cavity 112. In the embodiment, the LED array 120 may include a & photodiode wafer 120a and a second LED wafer 120b. a third light emitting diode chip i2〇c. The first light emitting diode chip 120a can emit a first light having a first wavelength, and the second light emitting diode crystal b can emit a second light having a second wavelength And the third illuminating 7 M341939 diode chip 12〇c can emit a third light having a third wavelength, and the first wavelength, the second wavelength ′ and the third wavelength in the basin are preferably different. The body chip group! 2 〇 emits a ^ and the third light can be visible or invisible light " 弟一光,一飞不τ see first. For example, the first light two, the body wafer 120a issued f_ ^ is The blue light with a wavelength between his 1 and the surface, the second emitted by the second LED Long "Ο " green between 11 to 55 ° ·, said third light emitting diode emits light of said third sheet Edition wavelength of red light may be between _nm to 63〇 invited. The first light-emitting diode wafer, the second first-pole wafer mb, and the third light-emitting diode wafer 12 are lightly arranged in the accommodating cavity 112. The plane-wavelength conversion structure 13 for line sharing is provided with a first light that is first emitted from the light-emitting surface of the polar body module 100, and a conversion structure 13 that is sent from the first "first-pole body wafer group 120". The radiation is diffused to the shared plane wavelength. The long-distance conversion structure 130 is uniformly distributed in the middle surface wavelength conversion structure 130, and the fluorescent powder 132 in the glaze powder ray 130 can be used to excite the first wavelength of the four wavelengths. The first light of this part is converted into the fourth light having the fourth wavelength, wherein the negative 罘 is long. Then, the fourth wavelength of the second brother is different from the plane shared by the first wave:: light, second light, third light And the fourth light can be mixed with the fourth structure by the fourth light to form white light. The long and third light are preferably different from the second wavelength of the second light. For example, In the present embodiment, the fluorescent light 8 M341939: is a powder of the early type, and (6) YAG' is stimulated by the YAG powder. The four light can be yellow light having a wavelength between 56 〇 nm and 600 nm. The fourth wavelength of the fourth light may overlap or partially overlap with the second wavelength or the second wavelength. The phosphor powder 132 in the shared planar wavelength conversion structure may be a mixture of various scale powders. For example, the phosphor powder 132 may include, and the fourth light excited by the camp wire 132 may be yellow light or red light. And a mixture of green light. The composition of the phosphor powder 132 may include YAG, SrS, SrGa2S4' U2〇3 Υ2〇3, etc. 'Fluorescent powder 132 can be selected according to the needs of the appropriate powder, if needed to stimulate visible light or invisible light The fourth light excited by the phosphor powder 132 can complement the band missing by the original light-emitting diode chip set 120. Therefore, the first light and the second light in the present invention are transmitted through the shared planar wavelength conversion structure in the present invention. Light, second

光,與第四光所混合而成的白光,相較於傳統的白光發 光二極體,可具有更佳的演色性。 X 相較於傳統的白光發光二極體,本新型中之白光發 光二極體模組100毋須使用填滿容置空腔112的封裝膠 體。而具有螢光粉m的共享之平面波長轉換結構 為設置在封裝殼體110上,且不與發光二極體晶片組12〇 直接接觸。發光二極體晶片組120所產生的熱量不會因 傳導而直接進入共享之平面波長轉換結構13〇,因此,共 享之平面波長轉換結構130中的螢光粉132不會直接接 叉發光二極體晶片組120所產生的熱量,故可有效地延 長螢光粉132與共享之平面波長轉換結構13〇的使用壽 M341939 命。 茶照第2A圖與第2B圖,第2A圖係繪示傳統三色 晶片之白光發光二極體的色溫圖,第23圖則是繪示本新 型之具有共享之平面波長轉換結構的白光發光二極體一 實施例之色溫圖。同時參照第丨圖,由發光二極體晶片 ▲ 120所發出之初始光與轉換後之轉換光可經由共享之 平面波長轉換結構130均勻地擴散,使兩者混合而成的 白光更為均勻。如圖所示,相較於第2 A圖中僅有三色晶 片的白光發光二極體,第2B圖中使用共享之平面波長轉 換結構130的白光發光二極體模組1〇〇可具有更均勻的 色溫。 參照第3圖,其係繪示本新型之白光發光二極體模 組另一較佳實施例之剖面圖。發光二極體晶片組12〇可 發出初始光。發光二極體晶片組12〇包含有至少兩種顏 色的發光二極體晶片,發光二極體晶片組12〇所發出之 初始光則包含有至少兩種不同的波長。共享之平=波長 轉換結構13〇可轉換—部分之初始光為轉換光,並可用~ 以均勻地擴散初始光與轉換光。初始光與轉換光可再混 合生白光。 初始光可包含可見光。初始光可包含有紅光、綠光、 藍光,或其組合。或者,初始光可更包含有不可見光, 如紫外光。發光二極體晶片組12〇之發光二極體晶片的 顏色可選自於由紅光、綠光、藍光、紫外光’及其組合 所組成之群組。 10 M341939 共旱之平面波長轉換結構130可包含有一基板 134 ’與塗佈在基板134上之一波長轉換材料136。波長 轉換材料136可塗佈在基板134的外表面或是内表面。 波長轉換材料1 3 6可包含螢光粉、感光材質,螢光 色轉換媒介(fluorescent color-conversion-media),有機錯The white light mixed with the fourth light can have better color rendering than the conventional white light emitting diode. Compared with the conventional white light emitting diode, the white light emitting diode module 100 of the present invention does not need to use the encapsulating glue filling the receiving cavity 112. The shared planar wavelength conversion structure having the phosphor powder m is disposed on the package housing 110 and is not in direct contact with the LED array 12A. The heat generated by the LED array 120 does not directly enter the shared planar wavelength conversion structure 13〇 due to conduction. Therefore, the phosphor powder 132 in the shared planar wavelength conversion structure 130 is not directly connected to the LED. The heat generated by the bulk wafer group 120 can effectively extend the life of the phosphor powder 132 and the shared planar wavelength conversion structure 13 M M341939. Tea photo 2A and 2B, 2A is a color temperature diagram of a white light emitting diode of a conventional three-color wafer, and FIG. 23 is a white light emitting light with a shared planar wavelength conversion structure of the present invention. A color temperature diagram of an embodiment of a diode. Referring to the second drawing at the same time, the initial light and the converted converted light emitted from the light-emitting diode wafer ▲ 120 can be uniformly diffused through the shared planar wavelength conversion structure 130, so that the white light mixed by the two is more uniform. As shown, the white light emitting diode module 1 using the shared planar wavelength conversion structure 130 in FIG. 2B can have more than the white light emitting diode having only three color chips in FIG. 2A. Uniform color temperature. Referring to Fig. 3, there is shown a cross-sectional view showing another preferred embodiment of the novel white light emitting diode module. The LED array 12 can emit initial light. The LED array 12A includes at least two color LED chips, and the initial light emitted by the LED array 12 includes at least two different wavelengths. Sharing level = wavelength conversion structure 13 〇 convertible - part of the initial light is converted light, and ~ can be used to evenly diffuse the initial light and converted light. The initial light and the converted light can be mixed with white light. The initial light can comprise visible light. The initial light may comprise red light, green light, blue light, or a combination thereof. Alternatively, the initial light may further comprise invisible light, such as ultraviolet light. The color of the light emitting diode chip of the light emitting diode chip group 12 can be selected from the group consisting of red light, green light, blue light, ultraviolet light 'and combinations thereof. The M341939 coplanar planar wavelength conversion structure 130 can include a substrate 134' and a wavelength converting material 136 coated on the substrate 134. The wavelength converting material 136 can be coated on the outer or inner surface of the substrate 134. The wavelength conversion material 136 may include a phosphor powder, a photosensitive material, a fluorescent color-conversion-media, and an organic error.

合物材質(organic complex),發光顏料,量子點 (quantum-dots-based) 為 底材質 , 量子線 (quantum-wire-based)為底材質,或量子阱 (quantum-weH-based)為底材質或上述材質之組合, 基板134可為透明基板,基板134之材料舉例而言 可包含玻璃、石英、聚曱基丙烯酸曱酯(p〇lymethyl methacrylate,PMMA)、聚苯乙稀(p〇iyStyrene,ps)、甲 苯乙烯(methyl styrene , MS)、或聚碳酸酉旨 (polycarbonate,PC)。 波長轉換材料136可透過浸塗法(dip coating)、刮刀 式塗佈法(comma coating)、噴塗法(spraying c〇ating)、旋 轉式塗法(spin coating)、擠壓塗佈法(si〇t c〇ating)、簾幕 式塗佈法(curtain coating)、凹板塗模法(gravure coating)、或捲對捲(r〇ll-to-r〇ll)塗佈法等方法,形成在基 板13 4上,並可視需要地,進行一或多次塗覆操作至所 需之塗層厚度。 本新型中發光二極體晶片組120的晶片種類、晶片 數目、個別晶片的驅動電流、或是營光粉的種類,均可 視不同的茜求後:更’以有效地提南白光發光二極體模組 11 M341939 100的演色性。 由上述本新型較佳實施例可知,應用本新型具有下 列優點。共享之平面波長轉換結構可均勻地擴散發光二 極體晶片組所發出之初始光,並轉換一部分之初始光為 轉換光。經由共享之平面波長轉換結構轉換之轉換光可 用以補充原初始光所缺少的波段,並和通過共享之平面 波長轉換結構之初始光混合,以形成具有較廣泛波段的 白光,進而提高白光發光二極體模組的演色性。 雖然本新型已以一較佳實施例揭露如上,然其並非 用以限定本新㊆,任何熟習此技㈣,在不脫離本新型 之精神和範_,當可作各種之更動與_,因此本新 型之保濩範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 為讓本新型之上述和其他目的、特徵、優點與實施 例能更明顯易懂’所附圖式之詳細說明如下: —第1圖係繪示本新型之白光發光二極體模組一較佳 貫施例之剖面圖。 第2 A圖係緣示傳統三色晶片之白光發光二極體的色 溫圖 〇 第2B圖係緣示本新型之具有共享之平面波長轉換結 的白光發光二極體一實施例之色温圖。 第3圖係繪示本新型之白光發光二極體模組另一較 12 M341939 佳實施例之剖面圖。 【主要元件符號說明】 100 :白光發光二極體模組 110 :封裝殼體 112 :容置空腔 120 :發光二極體晶片組 120a、120b、120c :發光二130:共享之平面波長轉換結 極體晶片 構 132 :螢光粉 134 :基板 13 6 :波長轉換材料Organic complex, luminescent pigment, quantum-dots-based base material, quantum-wire-based base material, or quantum-weH-based base material Or the combination of the above materials, the substrate 134 may be a transparent substrate, and the material of the substrate 134 may include, for example, glass, quartz, p〇lymethyl methacrylate (PMMA), and polystyrene (p〇iyStyrene, Ps), methyl styrene (MS), or polycarbonate (PC). The wavelength converting material 136 can be subjected to dip coating, comma coating, spraying coating, spin coating, and extrusion coating (si〇). Tc〇ating), curtain coating method, gravure coating method, or roll-to-roll method (r〇ll-to-r〇ll) coating method, formed on the substrate 13 4 and, if desired, one or more coating operations to the desired coating thickness. The type of wafer, the number of wafers, the driving current of individual wafers, or the type of camping powder in the novel LED chip set 120 can be seen after different requirements: more effectively to promote the south white light emitting diode Color rendering of the body module 11 M341939 100. It will be apparent from the above-described preferred embodiments of the present invention that the application of the present invention has the following advantages. The shared planar wavelength conversion structure uniformly diffuses the initial light emitted by the light-emitting diode chip set and converts a part of the initial light into converted light. The converted light converted through the shared planar wavelength conversion structure can be used to complement the band missing from the original initial light and mixed with the initial light through the shared planar wavelength conversion structure to form white light having a wider range of wavelengths, thereby improving white light emission. The color rendering of the polar body module. Although the present invention has been disclosed in a preferred embodiment as above, it is not intended to limit the novel, and any skill in the art can be made without departing from the spirit and scope of the present invention. The scope of the new type of protection is subject to the definition of the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features, advantages and embodiments of the present invention will become more apparent and understood <RTIgt; A cross-sectional view of a preferred embodiment of a polar body module. 2A is a color temperature diagram of a white light-emitting diode of a conventional three-color wafer. 〇 Figure 2B shows a color temperature diagram of an embodiment of a white light-emitting diode having a shared planar wavelength conversion junction. Fig. 3 is a cross-sectional view showing another preferred embodiment of the white light emitting diode module of the present invention. [Main component symbol description] 100: white light emitting diode module 110: package housing 112: housing cavity 120: light emitting diode chip group 120a, 120b, 120c: light emitting diode 130: shared planar wavelength conversion junction Polar body structure 132: fluorescent powder 134: substrate 13 6 : wavelength conversion material

1313

Claims (1)

M341939 九、申請專利範圍: 1. 一種白光發光二極體模組,包含: 一封裝殼體,包含一容置空腔; 一發光二極體晶片組,設置在該容置空腔中,包人 一第一發光二極體晶片,以放出具有· 長之一第一光;以及 —波M341939 IX. Patent Application Range: 1. A white light emitting diode module comprising: a package housing comprising a receiving cavity; a light emitting diode chip set disposed in the receiving cavity, the package a first light emitting diode chip to emit a first light having a length; and a wave 長之一第二光;以及 — 一共享之平面波長轉換結構,言曼置在該封 上’以均勻地擴散該第—光與該第二光,#中該:: 平面波長轉換結構轉換一部分之該第一光為—第:: :玄:四光之一第四波長與該第一波長不同,該第—光 該第二光’與該第四光係混合以形成一白光。 2. 如申請專利範圍第i項所述之白光發光二極體模 組’其中該第—光與該第二光包含一可見光。 3. 如申清專利範圍第2項所述之白光發光二極體模 ::其中該第—光包含一藍光,該第四光包含選自於由 頁光、紅光、綠光,及其組合所組成之群組。 4.如申請專利範圍第1項所述之白光發光二極體模 其中該第-光包含一不可見光。 14 M341939 5 ·如申請專利笳图结1 ^ 圍第I項所述之白光發光二極體模 ,、且,其中該共享之平面波長轉換結構包含-基板,以及 塗佈在該基板上之—波長轉換材料。 6·如申請專利範圍第5項所述之白光發光二極體模 組,其中該波長轉換材料包含磷粉、感光材質、營光色 :換:介、有機錯合物材質、發光顏料、量子點為底材 質、量子線為底材質、量子牌為底材質或上述材質之组 合〇 、、 7·如申請專利範圍第5項所述之白光發光二極體模 組,其中該基板係為一透明基板。 8·如申請專利範圍第5項所述之白光發光二極體模 ,、且其中該基板之材料包含玻璃、石英、聚甲基丙烯酸 甲酯、聚苯乙烯、甲苯乙烯,或聚碳酸酯。 9· 一種白光發光二極體模組,包含·· 一封裝殼體,包含一容置空腔; 一發光二極體晶片組,設置在該容置空腔中,以放 出初始光,该初始光包含至少兩波長;以及 共旱之平面波長轉換結構,設置於該封裝殼體 上,以均勻地擴散該初始光,其中該共享之平面波長轉 換結構轉換一部分之該初始光為一轉換光,該初始光與 15 M341939 該轉換光再混合形成一白光。 10·如申請專利範圍第9項所述之白光發光二極體模 組,其中該初始光包含一可見光。 11.如申請專利範圍第9項所述之白光發光二極體模 組,其中該初始光包含一不可見光。 12·如申請專利範圍第9項所述之白光發光二極體模 組’其中該共享之平面波長轉換結構包含一基板,以及 塗佈於該基板上之一波長轉換材料。 13·如申請專利範圍第12項所述之白光發光二極體 杈組,其中該波長轉換材料包含磷粉、感光材質、螢光 色轉換媒介、有機錯合物材質、發光顏料、量子點為底 材質、量子、線為底材f、量子$為底材f或上述材質之 組合。 項所述之白光發光二極體 透明基板。 14.如申請專利範圍第12 模組,其中該基板係為 1 5 ·如申請專利範 核組’其中该基板之 酸甲酯、聚苯乙稀、 圍第12項所述之白光發光二極體 材料包含玻璃、石英、聚甲基丙缚 甲笨乙烯,或聚碳酸酯。 16a second light; and a shared planar wavelength conversion structure, said to be placed on the cover to uniformly diffuse the first light and the second light, #::: a planar wavelength conversion structure conversion part The first light is -::: Xuan: one of the four lights, the fourth wavelength is different from the first wavelength, and the first light 'the second light' is mixed with the fourth light system to form a white light. 2. The white light emitting diode module as described in claim i wherein the first light and the second light comprise a visible light. 3. The white light emitting diode model according to claim 2, wherein the first light comprises a blue light, and the fourth light comprises a light selected from the group consisting of a page light, a red light, and a green light, A group of combinations. 4. The white light emitting diode module of claim 1, wherein the first light comprises an invisible light. 14 M341939 5 · The application of the patent 笳 1 1 ^ The white light emitting diode mold of the above item I, wherein the shared planar wavelength conversion structure comprises a substrate, and coated on the substrate - Wavelength conversion material. 6. The white light emitting diode module according to claim 5, wherein the wavelength conversion material comprises phosphor powder, photosensitive material, camping color: medium: organic complex material, luminescent pigment, quantum a white light emitting diode module according to the fifth aspect of the invention, wherein the substrate is a substrate, the quantum material is a bottom material, the quantum material is a bottom material, or a combination of the above materials. Transparent substrate. 8. The white light emitting diode module of claim 5, wherein the material of the substrate comprises glass, quartz, polymethyl methacrylate, polystyrene, styrene, or polycarbonate. 9· A white light emitting diode module comprising: a package housing comprising a receiving cavity; a light emitting diode chip set disposed in the receiving cavity to emit initial light, the initial The light includes at least two wavelengths; and a planar wavelength conversion structure of the co-drying is disposed on the package housing to uniformly diffuse the initial light, wherein the shared planar wavelength conversion structure converts a portion of the initial light into a converted light, The initial light is remixed with 15 M341939 to form a white light. 10. The white light emitting diode module of claim 9, wherein the initial light comprises a visible light. 11. The white light emitting diode module of claim 9, wherein the initial light comprises an invisible light. 12. The white light emitting diode module of claim 9, wherein the shared planar wavelength conversion structure comprises a substrate, and a wavelength converting material coated on the substrate. 13. The white light emitting diode package according to claim 12, wherein the wavelength conversion material comprises phosphor powder, photosensitive material, fluorescent color conversion medium, organic complex material, luminescent pigment, and quantum dot The bottom material, the quantum, the wire is the substrate f, the quantum $ is the substrate f or a combination of the above materials. The white light emitting diode transparent substrate described in the item. 14. The module of claim 12, wherein the substrate is 1 5 · as claimed in the patent specification group, wherein the substrate is acid methyl ester, polystyrene, and the white light emitting diode according to item 12 The bulk material comprises glass, quartz, polymethyl methacrylate, or polycarbonate. 16
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI381563B (en) * 2009-11-20 2013-01-01 Everlight Electronics Co Ltd Light emitting diode package and manufacturing method thereof
TWI407595B (en) * 2008-12-16 2013-09-01 Gio Optoelectronics Corp Manufacturing method of light-emitting apparatus
US9377886B2 (en) 2009-12-17 2016-06-28 Coretronic Corporation Optical touch display apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI407595B (en) * 2008-12-16 2013-09-01 Gio Optoelectronics Corp Manufacturing method of light-emitting apparatus
TWI381563B (en) * 2009-11-20 2013-01-01 Everlight Electronics Co Ltd Light emitting diode package and manufacturing method thereof
US9377886B2 (en) 2009-12-17 2016-06-28 Coretronic Corporation Optical touch display apparatus

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