200947665 九、發明說明： 【發明所屬之技術領域】 本發明是一種高演色性之發光二極體（LED)，特別是指 一種具有三段波長的紅綠藍三色光所混合出白光的發光二 極體。 【先前技術】 隨著近幾年在氮化鎵（GaN)、氮化鋁鎵（AlGaN)、氮化 φ 銦鎵（InGaN)等材料的發展，發光二極體（Light-Emitting200947665 IX. Description of the Invention: [Technical Field] The present invention relates to a high color rendering light-emitting diode (LED), and more particularly to a light-emitting diode with a three-segment wavelength of red, green and blue light Polar body. [Prior Art] With the development of materials such as gallium nitride (GaN), aluminum gallium nitride (AlGaN), and φ indium gallium nitride (InGaN) in recent years, light-emitting diodes (Light-Emitting)
Diode，LED)的藍、紫光LED的量產能力提升，藍光LED 價格迅速下滑，間接使白光LED的應用大幅增加。目前利 用發光二&體發白光的方式主要有幾種，分別為：（1)藍光+ 螢光粉/琥珀色螢光粉，其利用互補色調配白光的原理，以 波長460nm的InGaN藍光晶粒塗上一層YAG螢光物 質，利用藍光LED照射螢光物質產生與藍光互補的黃光， 再利用透鏡原理將互補的藍光、黃光混合，即可得到肉眼 φ 所見的白光，只需用單一晶粒，因此成本較低，不過這種 方法會使得光譜中缺乏紅色，使得在照射紅色物體時，會 顯示出偏黃色的紅色，且此方法必需添加螢光粉，所以得 考慮到螢光粉的吸收效率，自然使得發光效率打折扣；另 外一個大問題則是這個利用方法雖然簡單，大量製造的成 本低，但是其演色性（CRI ; Color Rendering Index，或稱顯 色指數）不是很好，大約只有70〜85之間，而且在色彩品 質這方面，應用這個方法製作的白色光發光二極體，非常 不易突破（CRI不易高於85)，且在大量製造上，非常難以 200947665 管控。因此’在一些需求高演色性指數的應用，例如：一 般照明、特殊照明、交通指示、背光源（如液晶顯示器、液 晶電視、液晶監視器或者筆記型電腦螢幕、可攜式裝置螢 幕、手機螢幕…等）的應用上，有相當多的限制，連帶地也 造成製造良率下滑，甚或因為顯色品質不易提升，不易管 控’缺乏均云且優良的光源進行更高階的產品發展與成本 居高不下’而逐漸成為阻礙產業發展的主因。紫外光 LED+紅藍綠三原色螢光粉，也是使用單一晶粒加螢光粉的 Φ 技術，使用紫外光去激發RGB螢光粉（同螢光燈原理），不 過使用UV最大的問題在於紫光波長短，所放出的能量遠 較藍光、綠光高，長期照射下會傷害商品，使壽命相對之 下較低’因此壽命問題形成目前UV LED研究上的瓶頸。 同時’由於紫外光發光二極體之製作技術與材料的限制， 其光輸出功率較低，使得利用這種技術製作出的白色光發 光二極體之峰值輸出功率較前述的方法來得差^ (3)RGB 二原色LED混成白光，其係將紅藍綠三顆晶粒封裝在一 φ 起，利用紅色光、藍色光、綠色光可混合而成人眼可見的 白光，最大的好處是不需要添加螢光粉，但RGB的多晶型 在驅動回路上的設計較複雜，生產成本較高。而其三種色 光晶片的特性不同、操作條件不同、隨使用時間的亮度變 化不同、亮度、壽命不同等，所引發的智慧型電壓或電流 驅動、亮度、演色性、色溫、均勻性、可靠性等方面的問 題，使得控制因素多且困難度高。三顆LED的發光效率、 波長、劣化程度等均不同，會使得白光不夠純正，且再考 慮驅動程式1C設計等的成本，使得它商業化大量生產上 6 200947665 面臨許多的困難。 由於目前白光LED的應用相當廣，以上述習知技術的 一般發光二極體’經由光轉換層（螢光層）而混合產生之白 光’其顯色指數大致上約70〜85，尤其在低色溫下其光通 量較低’右為了提尚顯色指數而添加螢光粉，則其光通量 也比較低。故傳統白光LED的技術，由發光二極體激發螢 光粉而發出白光的效果並不好。 再者，由於前述三種習知技藝，不論在演色性、色彩 β 品質、大量製造、光輸出功率、驅動迴路與技術實現的難 度上均面臨不少的問題與挑戰。因此，為了產業的未來發 展與人類全體之福祇，實需一新穎技術，讓發光二極體這 種低耗能、操作壽命長且定度高的環保產品，變得更加實 用與精緻。 【發明内容】 有鑑於此，本發明係提出一種高演色性之發光二極體 G (LED)，主要發明之一，係於封裝單元内設置m個（m>l)獨 立之主動發光二極體晶片，並依應用與封裝之方式，將發 光波長範圍相對較長的發光二極體晶片排列於晶片組陣列 的外圍部份，將發光波長範圍相對較短的發光二極體晶片 排列於晶片組陣列的中央内圍部份；並依國際照明委員會 (Commission International de l’Eclairage ; CIE)所制定之色 彩座標選擇適當的螢光粉作為一封裝結構。此一根本改變 傳統習知技藝的發明，藉著兩種以上之獨立之發光二極 體’配合恰當的擺置設計與螢光粉塗佈，使得發光波長範 200947665 圍相對較長的發光二極體晶片發出的色光，不會被散光材 質吸收’並可以混合發光波長範圍相對較短的發光二極體 發出的色光’而獲得較高演色特性（enhance(j CRI)之白色光 發光二極體。增加的獨立的發光二極髏與其特別設計的幾 何位置，根本改變了傳統習知技藝演色性不佳、色彩品質 不良、光輸出功率低落、媒動回路與技術實現困難等問題。 此外’本發明係提出一種高演色性之發光二極體 (LED) ’主要係將發光二極趙晶片組設置成mxn陣列的排 ❹ 列方式’並將發光波長範圍相對較長的發光二極體晶片排 列於晶片組陣列的外圍部份，將發光波長範圍相對較短的 發光二極體晶片排列於晶片組陣列的中央内圍部份。使得 發光波長範圍相對較長與較短的發光二極體晶片發出的色 光’不會被封裝材質吸收，而可以充分透過複數波長之設 計’獲得較高演色特性（enhanced color rendering index)色光的 高演色性發光二極體。 本發明之主要目的係提供一種具有高演色性之發光二 © 極體（LED),其係於發光二極體封裝結構中的一個基板表面 上’設置以mxn陣列（Array)方式排列之複數個發光二極體 晶片。其中有一特定比例之發光二極體晶片所發出的光 線’可經由光轉換層產生藍、黃、白色的色光，而另一特 疋比例之發光二極體晶片可發出紅色光源，使以上兩部份 的色光混合而產生三波段紅綠藍三原色之白色光，以提高 顯色指數至90以上。增加發光二極體所發出白光的顯色指 數（CRI ; color rendering index)及可增加整體之光通量 200947665 (luminous flux) ’因此可提高發光二極體光源對物體真實顏 色的呈現程度。 本發明之另一目的係提供一種高演色性之發光二極體 (LED)，除了前述的發光二極艎晶片配置方式，將一特定比 例之發光一極體晶片以紅色光的發光二極體晶粒設置分佈 於發光二極體晶片陣列中之外，亦可增加其他顏色光源之 發光二極體晶粒的配置，比如黃色光、綠色光等，以使發 光二極體之發光元件混合而形成之白色光，能增加所需的 Φ 顯色指數，以增加發光二極體發光元件之光線的顯色指數。 因此’運用本發明之主要精神所達成的實施方式，包 含如下： 實施方式1 :採用三波長（2個不同LED波長及1個螢 光粉受激發光波長）或以上之獨立發光二極艘，再加上覆蓋 螢光粉的構造，製成較好的CRI白光。其中，獨立發光二 極體係指經通電即可主動發光之晶粒，不需要有其他控制 電路，以免除複雜驅動電路之設計，可降低成本，增加良 〇 率。而2個不同波長之獨立發光二極體，其波長一為短波 長色光；另一個晶粒其波長大多比螢光粉受激後發出的色 光來得長。 實施方式2:採用三波長（2個不同LED波長及1個螢 光粉受激發光波長）或以上之獨立發光二極體，再加上覆蓋 螢光粉的構造，配合長波長LED配置在外圍，短波長LED 配置在内圍之幾何配置，達到混光均勻演色性高之白光。 實施方式3:採用三波長或以上之獨立發光二極體，再 加上覆蓋螢光粉的構造’製成mxn矩陣，增加晶粒幾何配 200947665 置與螢光粉選區或全面塗佈之設計彈性，產生較好的CRI 白光，適用於大功率燈具或一般照明或高亮度高演色性均 勻背光。 實施方式4:採用三波長或以上之獨立發光二極體（3 個LEDs)，再加上覆蓋螢光粉的構造。其中兩個同色LEDs 係根據CIE chart補足色彩特性不佳頻譜，使得演色性提高 且亮度也提高，製成較高階的CRI白光。 實施方式5:採用三波長或以上之獨立發光二極體（3 0 個LEDs)，再加上覆蓋螢光粉的構造。其中兩個同色LEDs 係根據CIE chart補足色彩特性不佳頻譜，使得演色性提 高，亮度也提高配合長波長LED配置在外圍，短波長LED 配置在内圍之幾何配置，達到混光均勻演色性高之白光。 實施方式6:採用三波長或以上之獨立發光二極體（3 個LEDs)+螢光粉的構造，製成mxn矩陣，增加晶粒幾何配 置與螢光粉選區或全面塗佈之設計彈性。其中兩個同色 LEDs係根據CIE chart補足色彩特性不佳頻段，使得演色 φ 性提高且亮度也提高，加上長波長在外短波長在内之幾何 配置，達到混光均勻演色性高、大功率輸出之白光。 實施方式7:採用四波長或以上之獨立發光二極體（4 個LED或以上），再加上覆蓋螢光粉的構造，其中兩個兩個 LED為同色，或是其中3個為同色LED，係根據CIE chart 補足色彩特性不佳頻譜，使得演色性提高且亮度也提高， 製成較高階的CRI白光。Diode, LED) The production capacity of blue and violet LEDs has increased, and the price of blue LEDs has rapidly declined, indirectly increasing the application of white LEDs. At present, there are mainly several ways to use the light-emitting two & white light: (1) blue light + fluorescent powder / amber fluorescent powder, which uses the principle of complementary color with white light, with InGaN blue crystal with a wavelength of 460 nm The particles are coated with a layer of YAG fluorescent material, and the blue light is irradiated by the blue LED to generate yellow light complementary to the blue light, and then the complementary blue light and yellow light are mixed by the lens principle to obtain the white light seen by the naked eye, and only a single light is used. The grain, so the cost is lower, but this method will make the spectrum lack red, so that when the red object is illuminated, it will show a yellowish red color, and this method must add the phosphor powder, so it is necessary to consider the phosphor powder. The absorption efficiency naturally makes the luminous efficiency compromised; another big problem is that although the utilization method is simple and the cost of mass production is low, its color rendering index (CRI; Color Rendering Index, or color rendering index) is not very good, about Only between 70 and 85, and in terms of color quality, the white light-emitting diode produced by this method is very difficult to break through (CRI is not easy Above 85), and in a lot of manufacturing, it is very difficult to control 200947665. Therefore 'in some applications requiring high color rendering index, such as: general lighting, special lighting, traffic instructions, backlights (such as LCD monitors, LCD TVs, LCD monitors or notebook screens, portable device screens, mobile screens) ...etc.) There are quite a few restrictions on the application, and the manufacturing yield is also degraded. Even because the color quality is not easy to improve, it is not easy to control the lack of uniform cloud and excellent light source for higher-order product development and higher cost. Not to be 'and gradually become the main reason hindering the development of the industry. UV LED + red, blue and green three primary color fluorescent powder, is also a single crystal plus fluorescent powder Φ technology, using ultraviolet light to stimulate RGB fluorescent powder (same with fluorescent light principle), but the biggest problem with using UV is the violet wavelength Short, the energy released is much higher than that of blue light and green light. Long-term exposure will damage the goods and make the lifespan relatively low. Therefore, the life problem has formed the bottleneck of current UV LED research. At the same time, due to the limitation of the fabrication technology and materials of the ultraviolet light-emitting diode, the light output power is low, so that the peak output power of the white light-emitting diode produced by this technology is worse than the above method ^ ( 3) RGB two primary color LEDs are mixed into white light. The three colors of red, blue and green are packaged in a φ. The red, blue and green light can be mixed to form white light visible to the human eye. The biggest advantage is that no need to add Fluorescent powder, but the design of RGB polymorphs on the drive circuit is more complicated and the production cost is higher. The characteristics of the three color-light wafers are different, the operating conditions are different, the brightness varies with the use time, the brightness, the life is different, etc., and the intelligent voltage or current drive, brightness, color rendering, color temperature, uniformity, reliability, etc. are caused. The problems in the aspect make the control factors more and more difficult. The luminous efficiency, wavelength, and degree of deterioration of the three LEDs are different, which makes the white light not pure enough, and the cost of the driver 1C design is considered, which makes it difficult to commercialize mass production. Since the application of white LEDs is quite extensive at present, the general light-emitting diodes of the above-mentioned prior art 'white light generated by mixing through a light conversion layer (fluorescent layer) have a color rendering index of about 70 to 85, especially at a low level. At the color temperature, the luminous flux is low. Right, in order to add the fluorescent powder to the color rendering index, the luminous flux is also relatively low. Therefore, the technology of the conventional white LED, the effect of emitting white light by the luminescent diode to emit the white light is not good. Furthermore, due to the aforementioned three conventional techniques, there are many problems and challenges in terms of color rendering, color β quality, mass production, optical output power, drive loop and technical difficulty. Therefore, in order to develop the future of the industry and the blessings of all human beings, it is necessary to have a novel technology to make the environmentally-friendly products of low-energy, long-life operation and high-definition of the light-emitting diodes more practical and refined. SUMMARY OF THE INVENTION In view of the above, the present invention provides a high color rendering light-emitting diode G (LED), one of the main inventions, in which m (m>1) independent active light-emitting diodes are disposed in a package unit. a body wafer, and a light-emitting diode wafer having a relatively long light-emitting wavelength range is arranged in a peripheral portion of the wafer array according to a method of application and packaging, and a light-emitting diode wafer having a relatively short emission wavelength range is arranged on the wafer The central inner circumference of the array is arranged; and the appropriate phosphor is selected as a package structure according to the color coordinates set by the Commission International de l'Eclairage (CIE). This invention, which fundamentally changes the traditional techniques, uses two or more independent LEDs to fit the appropriate placement design and phosphor coating, resulting in a relatively long light-emitting diode with a wavelength of 200947665. The color light emitted by the bulk wafer is not absorbed by the astigmatism material and can be mixed with the color light emitted by the light-emitting diode with a relatively short wavelength range to obtain a higher color rendering characteristic (enhance (j CRI) white light emitting diode) The addition of independent light-emitting diodes and their specially designed geometric positions have fundamentally changed the traditional color-changing techniques, poor color quality, low light output power, difficulty in media circuit and technical difficulties. The invention proposes a high color rendering light-emitting diode (LED) 'mainly by arranging a light-emitting diode chip set into an array of mxn arrays' and illuminating a light-emitting diode wafer having a relatively long wavelength range. A light-emitting diode chip having a relatively short emission wavelength range is arranged in a central inner peripheral portion of the chip array array at a peripheral portion of the wafer array. The light-emitting wavelength range is relatively long and the light color emitted by the short-emitting diode chip is not absorbed by the package material, and can be fully transmitted through the complex wavelength design to obtain high color rendering of the enhanced color rendering index. Light-emitting diode. The main object of the present invention is to provide a light-emitting diode (LED) with high color rendering, which is disposed on a substrate surface in a light-emitting diode package structure, and is arranged in an array of mxn (Array). a plurality of light-emitting diode chips arranged in a manner in which a light emitted by a specific proportion of the light-emitting diode chip generates blue, yellow, and white color light through the light conversion layer, and another special ratio of light-emitting light The polar body wafer can emit a red light source, and the above two parts of the color light are mixed to generate three-band red, green and blue primary colors of white light to increase the color rendering index to above 90. Increasing the color rendering index of the white light emitted by the light-emitting diode ( CRI; color rendering index) and can increase the overall luminous flux 200947665 (luminous flux) 'So it can improve the light source of the LED source Another aspect of the present invention is to provide a high color rendering light emitting diode (LED). In addition to the foregoing arrangement of the light emitting diode chip, a specific proportion of the light emitting body wafer is red light. The arrangement of the light-emitting diodes is arranged outside the array of the light-emitting diodes, and the arrangement of the light-emitting diodes of other color light sources, such as yellow light, green light, etc., may be added to make the light-emitting diodes The white light formed by mixing the light-emitting elements can increase the required Φ color rendering index to increase the color rendering index of the light of the light-emitting diode light-emitting element. Therefore, the embodiment achieved by using the main spirit of the present invention includes As follows: Embodiment 1: A three-wavelength (two different LED wavelengths and one phosphor powder is excited by the wavelength of the light) or above, and an independent light-emitting diode, plus a structure covering the phosphor powder, is better. CRI white light. Among them, the independent light-emitting diode system refers to the die that can be actively illuminated by being energized, and does not need other control circuits, so as to avoid the design of the complex drive circuit, which can reduce the cost and increase the good rate. The two independent light-emitting diodes of different wavelengths have a wavelength of short-wavelength light; the other crystal has a wavelength that is longer than that of the phosphor powder. Embodiment 2: an independent light-emitting diode using three wavelengths (two different LED wavelengths and one fluorescent powder to be excited light wavelength) or more, plus a structure covering the fluorescent powder, and a long-wavelength LED disposed on the periphery The short-wavelength LED is arranged in the geometric configuration of the inner circumference to achieve white light with high color mixing and uniform color rendering. Embodiment 3: Using an independent light-emitting diode of three wavelengths or more, plus a structure covering the phosphor powder to make an mxn matrix, increasing the crystal geometry of the 200947665 and the design flexibility of the phosphor powder selection area or the overall coating Produces better CRI white light, suitable for high-power lamps or general illumination or high brightness and high color rendering uniform backlight. Embodiment 4: Independent light-emitting diodes (3 LEDs) of three wavelengths or more are used, plus a structure covering the phosphor powder. Two of the same-color LEDs complement the color spectrum according to the CIE chart, which improves the color rendering and brightness, and produces higher-order CRI white light. Embodiment 5: Independent light-emitting diodes (30 LEDs) of three wavelengths or more are used, plus a structure covering the phosphor powder. Two of the same-color LEDs complement the color spectrum according to the CIE chart, which improves the color rendering, and the brightness is also improved with the long-wavelength LED configuration in the periphery. The short-wavelength LED is arranged in the geometric configuration of the inner circumference to achieve high uniform color mixing. White light. Embodiment 6: Using an independent light-emitting diode (3 LEDs) + phosphor powder structure of three wavelengths or more, an mxn matrix is formed to increase the geometrical configuration of the crystal grain and the design flexibility of the phosphor powder selection region or the overall coating. Two of the same-color LEDs complement the color characteristics according to the CIE chart, so that the color rendering is improved and the brightness is also improved. In addition, the long wavelength is in the geometric configuration of the short wavelength, and the mixed light is uniform and the color rendering is high. White light. Embodiment 7: using independent light-emitting diodes of four wavelengths or more (4 LEDs or more), plus a structure covering the phosphor powder, wherein two of the two LEDs are of the same color, or three of them are the same color LED According to the CIE chart, the poor color spectrum is complemented, so that the color rendering is improved and the brightness is also improved, and a higher order CRI white light is produced.
實施方式8:採用四波長或以上之獨立發光二極體（4 個LED或以上），再加上覆蓋螢光粉的構造，係根據CIE 200947665 chart補足色彩特性不佳頻譜，使得演色性提高且亮度也提 高，製成較高階的CRI白光。 此外，應用本發明技術之一種高演色性之發光二極體 (LED)，更可設置於一凹形具有複數個反射溝槽之柱狀發光 基座，係以mxn陣列（Array)方式排列之複數個發光二極體 晶片，並將發光波長範圍相對較長的發光二極體晶片排列 於晶片組陣列的外圍部份，將發光波長範圍相對較短的發 光二極體晶片排列於晶片組陣列的中央内圍部份。因此， φ 可使得發光波長範圍相對較長的發光二極體晶片發出的色 光，以混合發光波長範圍相對較短的發光二極體發出的色 光，而獲得較高演色特性（enhanced CRI)之色光。藉此，可 將發光二極體元件設計成長條型且具有多個發光面的LED 燈具，使燈光照射的範圍及照明效果大幅提升。 【實施方式】 本發明係為一種高演色性之發光二極體（LED)，主要係 Q 將發光二極體晶片組設置成陣列的排列方式，並將發光波 長範圍相對較長的發光二極體晶片排列於晶片組陣列的外 圍部份，將發光波長範圍相對較短的發光二極體晶片排列 於晶片組陣列的中央内圍部份，以獲得較高演色特性 (enhanced CRI)之白光的一種高演色性之發光二極體。以下 配合圖示之較佳實施例，詳細說明本發明之内容及技術。 首先，先配合參照第1A圖，係為本發明高演色性之發 光二極體的實施例一示意圖。本發明所提出之發光二極體 100,係於基座110内以陣列（Array)方式排列複數個發光二 11 200947665 極體晶片120,以及覆蓋於該些發光二極體晶片120上之一 保護層130其中該些發光二極體晶片120所排列之陣列A 中，包含第一波長晶片121、及第二波長晶片122。第一波 長晶片121’為該些發光二極體晶片120中發光波長較短之 晶片，排列於陣列A的内圍，比如可為一藍光發光二極體。 而第二波長晶片122,為該些發光二極體晶片120中發光波 長較長之晶片，排列於陣列A的外圍部分，比如可為一紅 光發光二極體。其中，可根據CIE chart補足色彩特性不佳 • 的頻譜之目的，將第一波長晶片121的數量設計成多於第 二波長晶片122的數量的配置；亦或，將第二波長晶片122 的數量設計成多於第一波長晶片121的數量的配置》 接著，配合參照第1B〜1E囷，係為本發明高演色性 之發光二極體的實施例一之PP，剖面圖。本發明之發光二極 鱧100的封裝結構中，在保護層130上包含一部分之螢光 粉塗佈區131，螢光粉塗佈區131中的螢光粉，可受該些發 光二極體晶片發光的激發，而發出波長介於該第一波長與 φ 該一第二波長之間的色光。螢光粉塗佈區131所包覆的區 域可至少含蓋該第一波長晶片121(如第IB、1C囷所示）； 或者，使螢光粉塗佈區131所包覆的區域，不含蓋該第二 波長晶片122(如第1D、1E圖所示），使該第一波長晶片121 透過該保護層130之螢光粉塗佈區131所發出之色光，與 該第二波長晶片122所發出之色光，混合出一具有高顯色 指數的白光。然而，其中保護層130更可包含一散光材質 (Optical diffuser)’以使發光二極體射出的光線分佈均勻， 提高光線散射的效應，增加光的使用效率。 12 200947665 配合參照第2圖，本發明高演色性之發光二極趙的該 些複數個發光二極體晶片120，更可再包含第三波長晶片 123，比如綠光發光二極艚、黃光發光二極體。第三波長晶 片123的發光波長介於第一波長晶片121之色光與第二波 長晶片122之色光之間。將第三波長晶片123排列在發光 二極體晶片120陣列A中的該些第一波長晶片121與該些 第二波長晶片122之間’亦更增加其整體混合出的白光的 顯色指數（CRI)。 參 配合參照第3〜5囷’係分別為本發明高演色性之發光 二極體的其他實施例之示意圖。其為應用本發明之主要設 計原理’所發展出的發光二極艎晶片不同的陣列配置方 式’主要均將發光波長範圍相對較長的發光二極體晶片排 列於晶片組陣列的外圍部份，而將發光波長範圍相對較短 的發光二極體晶片排列於晶片組陣列的中央内圍部份。使 得發光波長範圍相對較長的發光二極體晶片發出的色光， 不會被散光材質吸收，以混合發光波長範圍相對較短的發 〇 光二極體發出的色光，而獲得較高演色特性（enhanced CRI) 之色光。因此，在不脫離本發明之精神和範圍内，利用本 發明之設計原理所作的發光二極體晶片陣列的變形，均為 本發明之技術範圍所涵蓋。 雖然本發明已以較佳實施例揭露如上，然其並非用以 限定本發明’任何熟習此技藝者，在不脫離本發明之精神 和範圍内’當可作各種之更動與潤飾，因此本發明之保護 範圍當視後附之申請專利範圍所界定者為準。 13 200947665 【圖式簡單說明】 為讓本發明之上述和其他目的、特徵、優點與實施例 更明顯易懂，所附圖式之詳細說明如下： 第圖，係為本發明高演色性之發光二極鱧的一實施 例示意囷。 第〜ιΕ圖，係為本發明高演色性之發光二極艎的 一實施例之PP，剖面圖。 藝 “ί 2〜5圖，係分別為本發明高演色性之發光二極髏的 其他實施例之示意圖。 【主要元件符號說明】 100 :發光二極體 110 :基座 120 :發光二極體晶片 121 :第一波長晶片 ❿ 122 :第二波長晶片 123 :第三波長晶片 130 :保護層 131 :螢光粉塗佈區 A :陣列Embodiment 8: using independent light-emitting diodes of four wavelengths or more (four LEDs or more), plus the structure of covering the fluorescent powder, complementing the poor color spectrum according to the CIE 200947665 chart, so that the color rendering property is improved and The brightness is also increased to produce a higher order CRI white light. In addition, a high color rendering light emitting diode (LED) using the technology of the present invention can be disposed in a concave columnar light emitting pedestal having a plurality of reflective grooves arranged in an array of mxn arrays. a plurality of light-emitting diode chips, and a light-emitting diode wafer having a relatively long light-emitting wavelength range is arranged in a peripheral portion of the chip array, and a light-emitting diode wafer having a relatively short light-emitting wavelength range is arranged on the wafer array The central inner part. Therefore, φ can make the color light emitted by the light-emitting diode wafer having a relatively long wavelength range of light emission, and the color light emitted by the light-emitting diode having a relatively short light-emitting wavelength range, thereby obtaining a color light with higher CRI color. . In this way, the LED illuminator having a strip shape and a plurality of illuminating surfaces can be designed to have a large range of illumination and illumination effects. [Embodiment] The present invention is a high color rendering light emitting diode (LED), which is mainly a Q arrangement in which an array of light emitting diode chips is arranged in an array, and a light emitting diode having a relatively long wavelength range of light emission. The body wafer is arranged on a peripheral portion of the array of the wafer, and the light-emitting diode wafer having a relatively short emission wavelength range is arranged in the central inner peripheral portion of the array of the wafer to obtain a higher CRI white light. A high color rendering light-emitting diode. The contents and techniques of the present invention are described in detail below with reference to preferred embodiments of the drawings. First, referring to Fig. 1A, it is a schematic diagram of the first embodiment of the light-emitting diode of the present invention. The light-emitting diode 100 of the present invention is arranged in an array Array to align a plurality of light-emitting diodes 11 200947665 polar body wafers 120 and cover one of the light-emitting diode wafers 120. In the layer 130, the array A of the LED arrays 120 includes a first wavelength wafer 121 and a second wavelength wafer 122. The first wavelength wafer 121' is a wafer having a shorter wavelength of light emitted from the LED chips 120, and is arranged in the inner circumference of the array A, for example, a blue light emitting diode. The second wavelength wafer 122 is a wafer having a long light-emitting wavelength in the light-emitting diode wafer 120, and is arranged in a peripheral portion of the array A, for example, a red light-emitting diode. Wherein, the number of the first wavelength wafers 121 may be designed to be larger than the number of the second wavelength wafers 122 according to the CIE chart to supplement the spectrum of the poor color characteristics; or the number of the second wavelength wafers 122 may be Arrangement of Designing the Number More Than the First Wavelength of the Wafer 121. Referring to FIGS. 1B to 1E, the PP of the first embodiment of the present invention is a PP cross-sectional view of the light-emitting diode of the present invention. In the package structure of the light-emitting diode 100 of the present invention, a part of the phosphor coating area 131 is included on the protective layer 130, and the phosphor powder in the phosphor coating area 131 can be received by the light-emitting diodes. The excitation of the light emitted by the wafer emits a color light having a wavelength between the first wavelength and the second wavelength. The area covered by the phosphor coating area 131 may cover at least the first wavelength wafer 121 (as shown in FIGS. IB and 1C); or the area covered by the phosphor coating area 131, Covering the second wavelength wafer 122 (as shown in FIGS. 1D and 1E), the first wavelength wafer 121 is transmitted through the color light emitted by the phosphor coating region 131 of the protective layer 130, and the second wavelength wafer The color light emitted by 122 is mixed with a white light having a high color rendering index. However, the protective layer 130 may further include an optical diffuser to uniformly distribute the light emitted from the light emitting diode, improve the effect of light scattering, and increase the efficiency of light use. 12 200947665 With reference to FIG. 2, the plurality of light-emitting diode chips 120 of the high color rendering light-emitting diode of the present invention may further include a third wavelength wafer 123, such as a green light-emitting diode or a yellow light. Light-emitting diode. The third wavelength wafer 123 has an emission wavelength between the color light of the first wavelength wafer 121 and the color light of the second wavelength wafer 122. Arranging the third wavelength wafer 123 between the first wavelength wafers 121 and the second wavelength wafers 122 in the array A of the LED array 120 also increases the color rendering index of the white light that is integrally mixed ( CRI). Reference is made to the third to fifth embodiments, which are schematic views of other embodiments of the high color rendering light-emitting diode of the present invention. The different array configurations of the light-emitting diode chips developed by applying the main design principle of the present invention are mainly arranged such that the light-emitting diode chips having relatively long light-emitting wavelength ranges are arranged in the peripheral portion of the chip array. The light-emitting diode wafer having a relatively short emission wavelength range is arranged in the central inner peripheral portion of the wafer array. The color light emitted by the light-emitting diode chip having a relatively long wavelength range of light emission is not absorbed by the astigmatism material, and the color light emitted by the light-emitting diode having a relatively short emission wavelength range is mixed to obtain higher color rendering characteristics (enhanced) CRI) The color of light. Therefore, variations of the array of light-emitting diode wafers made using the design principles of the present invention are encompassed by the technical scope of the present invention without departing from the spirit and scope of the present invention. While the present invention has been described in its preferred embodiments, the present invention is not intended to limit the invention, and the invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features, advantages and embodiments of the present invention will become more <RTIgt; An embodiment of a bipolar crucible is illustrated. The first ιΕ图 is a PP, cross-sectional view of an embodiment of the high color rendering light-emitting diode of the present invention. The art "ί 2~5" is a schematic diagram of another embodiment of the high color rendering light-emitting diode of the present invention. [Main component symbol description] 100: Light-emitting diode 110: pedestal 120: light-emitting diode Wafer 121: first wavelength wafer ❿ 122: second wavelength wafer 123: third wavelength wafer 130: protective layer 131: phosphor powder coating area A: array