CN205264743U - Quantum dot LED structure - Google Patents
Quantum dot LED structure Download PDFInfo
- Publication number
- CN205264743U CN205264743U CN201520827268.2U CN201520827268U CN205264743U CN 205264743 U CN205264743 U CN 205264743U CN 201520827268 U CN201520827268 U CN 201520827268U CN 205264743 U CN205264743 U CN 205264743U
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- quantum dot
- glass substrate
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Abstract
The utility model discloses a quantum dot LED packaging structure, the structure includes: glass substrate the last quantum dot of glass substrate wafer fixing glue on the quantum dot the last LED chip of wafer fixing glue, and two electrodes on the LED chip, wherein, wafer fixing glue covers all of quantum dot expose the part and the part surface that glass substrate exposes, organic thin film covers all of wafer fixing glue expose the surface the side surface of LED chip and the part surface that glass substrate exposes, the inorganic thin film covers organic thin film, the reflection white glues covers the inorganic thin film. The utility model discloses a this encapsulation method will make the wide application of quantum dot material on LED become the possibility. This patent related to the encapsulation need not to use support and gold thread, compare with the encapsulation form of the same performance, the cost has been saved more than 20%, makes LED more extensive in the application of every field, especially commercial lighting and domestic lighting field.
Description
Technical field
The utility model relates to a kind of quantum dot LED encapsulating structure, be mainly used in backlight, illumination,On the products such as Flash, belong to semiconductor lighting application.
Background technology
Current white light LEDs, the commercial technical scheme generally adopting is rubescent with blue chip collocationLook, green, yellow fluorescent material, but be thisly mixed to form white by blue chip excitated fluorescent powderThe mode of light, owing to being subject to the restriction of the level structure of rare earth fluorescent powder material own, causes its utilizing emitted lightSpectral limit is wider, and monochromaticjty is poor, and colour gamut can only reach 72%NTSC, the reducing power of colorA little less than. Therefore want to obtain higher colour gamut, must adopt the narrower quanta point material of emission spectrum, itsHalf-peak breadth can be accomplished below 35nm conventionally. Adopt the high colour gamut as backlight of quanta point materialThe colour gamut value of LCD TV can reach 110%NTSC. Three large quanta point materials are raw in the world at presentBusiness men is the QDVision of the U.S., the Nanoco of Britain and German Nanosys. Current quantum dot materialMaterial main technological difficulties in large-scale commercial applications application be how to realize quanta point material every wet everyOxygen processing, current main method has three kinds, and the first is directly quanta point material to be placed on to blueness" On-Chip " mode on LED chip, the second is that quantum dot is sealed in thin glass tube and peace" On-Edge " mode that is contained in the LED light incident section of back of the body illuminator LGP, the third is by filmBetween accompany quantum dot flaky material be attached to " On-Surface " side between back of the body illuminator and liquid crystal panelFormula. First method is the simplest, but is not easy to realize, and the second and the third scheme are when first threeLarge manufacturer's main flow direction. If but can simply realize the on-chip mode of quantum dot, that nothingDoubt the business application that makes quanta point material is peaked. This patent is exactly to carry under such backgroundOut.
Utility model content
This patent provides the novel on-chip encapsulation technology of a kind of quantum dot LED, i.e. reverse encapsulation skillArt. Traditional LED packaged type is encapsulation from bottom to top, and the related packaged type of this patentBe upper and under packaged type. The ingenious quanta point material of having avoided need be dissolved in silica gel problem, solves simultaneouslyQuanta point material oxygen barrier every wet problem, making quanta point material can adopt simple efficient way to realize shouldWith. Quantum dot (QuantumDot) is a kind of nano material, is by elements such as zinc, cadmium, selenium, sulphurNano particle that the semi-conducting material being combined to is made, diameter 2～10nm. Compare traditional LEDLight source, quantum dot LED has that glow color is pure, stable luminescent property, energy-efficient, color is adjustableEtc. advantage, quantum dot LED will have wide market prospects.
Particularly, the utility model discloses a kind of quantum dot LED encapsulating structure, described structure comprises:Crystal-bonding adhesive, described crystal-bonding adhesive on quantum dot, described quantum dot on glass substrate, described glass substrateOn LED chip, and two electrodes on described LED chip, wherein, described crystal-bonding adhesive coversThe part surface that all expose portions of described quantum dot and described glass substrate expose, organic film coversCover side surface and the described glass substrate of all exposed surfaces of described crystal-bonding adhesive, described LED chipThe part surface exposing, inorganic thin film covers described organic film, and reflection white glue covers described inorganic thin film.
Further, described glass substrate comprises all oxygen barriers that can be used for every wet high transmission rate material.
Further, described crystal-bonding adhesive comprises silica type material.
Further, the number of plies of described organic film and described inorganic thin film can optionally be adjusted.
Further, described organic and inorganic thin layer can be used as absorbing or isolating oxygen G&W, and it comprisesAny material with good absorption or isolating oxygen G&W.
Further, the material of described good absorption or isolating oxygen G&W includes but not limited to: aluminium base multipleCondensation material, SiO2、Al2O3, fluorinated polymer, Parylene, Si3N4、SiNxOy、AlN、 Mg、Parylene(para-xylylene)。
The beneficial effects of the utility model are:
Adopt quantum dot as luminescent material, in application backlight, colour gamut can reach 110%NTSC, thanIt is nearly 60% that existing LED improves, and color saturation will increase greatly, in illumination for color rendition energyPower will promote greatly, make more close to natural daylight.
Directly use encapsulation, by the mode of the glass tube encapsulation quantum dot than current employing more economically, becomeThis further reduces, and reliability is greatly improved.
Adopt this method for packing that the extensive use that makes quanta point material on LED is become to possibility.
The involved encapsulation of this patent is without using support and gold thread, with the packing forms phase of identical performanceRatio, cost savings more than 20%, make LED more extensive in the application of every field, especially businessIndustry illumination and domestic lighting field.
No rack structure, heat dispersion is splendid, has extended service life. Due to the absorption to light without supportAnd scattering process, the efficiency of light energy utilization improves.
Beam angle can reach more than 150 °, is convenient to secondary optical design.
The colorspace distribution of light is even, and luminous even, light extraction efficiency is high. Improve the optical of LEDCan, promote the taste of application end product.
Save encapsulating material, simplified packaging technology and program.
The encapsulation of great power LED is no longer subject to the restriction of encapsulating material and supporting structure, can be as requiredEncapsulate the size and shape of applicable power and selection light-emitting area.
Packaging body is chip-scale size, can finely meet slimming demand and other army of backlight productWith, the requirement of civilian high-end product to light source small size.
Light-emitting area shape and size can design according to demand, and flexibility ratio is high.
Brief description of the drawings
Fig. 1 is quantum dot LED structure chart.
Fig. 2 is quantum dot LED packaging technology sketch.
1. glass substrate 2. quantum dot 3. crystal-bonding adhesive 4. LED chip 5. organic film is 6. inorganic thin8. film 7. electrode reflects white glue
Detailed description of the invention
A kind of quantum dot LED encapsulating structure the utility model being provided below in conjunction with accompanying drawing and methodDetailed description of the invention elaborates.
The quantum dot LED encapsulation that this patent relates to, does not adopt support to seal in conjunction with flip-chipDress, technique is also different from the technological process of traditional LED encapsulation. Its major technique thinking is and traditionThe operator scheme that LED packaging technology flow process is contrary is carried out, and adopts the material such as glass and organic material and potteryThe mode that material combines encapsulates quantum dot, to completely cut off oxygen and steam in air. Concrete encapsulating structureAs shown in Figure 1, quantum dot LED encapsulating structure comprises: (described glass substrate comprises institute to glass substrateHave and can be used for oxygen barrier every wet high transmission rate material. ), quantum dot, described amount on described glass substrateCrystal-bonding adhesive (described crystal-bonding adhesive is including but not limited to current silica type material), described die bond on son pointTwo electrodes on LED chip on glue, described LED chip, wherein, described crystal-bonding adhesive covers instituteState all expose portions of quantum dot and the part surface that described glass substrate exposes, organic film coversThe side surface of all exposed surfaces of described crystal-bonding adhesive, described LED chip and described glass substrate are sudden and violentThe part surface revealing, inorganic thin film covers described organic film, and reflection white glue covers described inorganic thin film.Described organic film and the visual situation of the described inorganic thin film number of plies are adjusted, i.e. described organic film and instituteState inorganic thin film and replace encapsulating structure, described organic and inorganic thin layer can be used as absorption or starvation andWater, its comprise any material with good absorption or isolating oxygen G&W (as: aluminum matrix composite,SiO2、Al2O3, fluorinated polymer, Parylene, Si3N4、SiNxOy、AlN、Mg、The materials such as Parylene (para-xylylene)).
Quantum dot LED packaging technology flow process as shown in Figure 2, can be divided into following key step:
1) clean glass substrate: use cleaning fluid that cleaning glass substrate is clean;
2) apply quanta point material: quanta point material is coated on glass substrate, and coating method comprisesBut be not limited only to the modes such as rotary coating, spraying, printing;
3) crystal-bonding adhesive encapsulation: crystal-bonding adhesive is covered on quanta point material, form the glue-line of fixed chip.
4) baking: baking silica gel is to semi-solid preparation;
5) die bond: after baking, carry out die bond operation;
6) plated film encapsulation: alternately plate organic layer, inorganic layer (as SiO2、Parylene(para-xylylene)、Al2O3, fluorinated polymer, Parylene, Si3N4、SiNxOy, the material such as AlN, MgMaterial), organic-inorganic alternately encapsulation makes fully starvation and steam of quanta point material;
7) repeating step 6, forms multilayer resist;
8) fill reflection white glue: fill reflection white glue all around at chip;
9) cutting;
10) test.
The foregoing is only preferred embodiment of the present utility model, in the description of above-mentioned descriptionNumerical value and the number range mentioned are not limited to the utility model, just for the utility model providesPreferred embodiment, be not limited to the utility model, for a person skilled in the art,The utility model can have various modifications and variations. It is all within spirit of the present utility model and principle,Any amendment of doing, be equal to replacement, improvement etc., all should be included in protection domain of the present utility modelWithin.
Claims (2)
1. a quantum dot LED encapsulating structure, described structure comprises: glass substrate, quantum dot on described glass substrate, crystal-bonding adhesive on described quantum dot, LED chip on described crystal-bonding adhesive, and two electrodes on described LED chip, wherein, described crystal-bonding adhesive covers all expose portions of described quantum dot and the part surface that described glass substrate exposes, organic film covers all exposed surfaces of described crystal-bonding adhesive, the part surface that the side surface of described LED chip and described glass substrate expose, inorganic thin film covers described organic film, reflection white glue covers described inorganic thin film.
2. structure according to claim 1, is characterized in that, the number of plies of described organic film and described inorganic thin film can be adjusted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520827268.2U CN205264743U (en) | 2015-10-23 | 2015-10-23 | Quantum dot LED structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520827268.2U CN205264743U (en) | 2015-10-23 | 2015-10-23 | Quantum dot LED structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205264743U true CN205264743U (en) | 2016-05-25 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520827268.2U Withdrawn - After Issue CN205264743U (en) | 2015-10-23 | 2015-10-23 | Quantum dot LED structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205264743U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105226166A (en) * | 2015-10-23 | 2016-01-06 | 易美芯光（北京）科技有限公司 | A kind of quantum dot LED structure and method for packing |
| CN114724468A (en) * | 2021-01-04 | 2022-07-08 | 群创光电股份有限公司 | Display device |
-
2015
- 2015-10-23 CN CN201520827268.2U patent/CN205264743U/en not_active Withdrawn - After Issue
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105226166A (en) * | 2015-10-23 | 2016-01-06 | 易美芯光（北京）科技有限公司 | A kind of quantum dot LED structure and method for packing |
| CN105226166B (en) * | 2015-10-23 | 2017-11-03 | 易美芯光（北京）科技有限公司 | A kind of quantum dot LED structure and method for packing |
| CN114724468A (en) * | 2021-01-04 | 2022-07-08 | 群创光电股份有限公司 | Display device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20160525 Effective date of abandoning: 20171103 |
|
| AV01 | Patent right actively abandoned |