CN107394028A - Quantum dot LED and light fixture - Google Patents
Quantum dot LED and light fixture Download PDFInfo
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- CN107394028A CN107394028A CN201710694249.0A CN201710694249A CN107394028A CN 107394028 A CN107394028 A CN 107394028A CN 201710694249 A CN201710694249 A CN 201710694249A CN 107394028 A CN107394028 A CN 107394028A
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 96
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 238000000576 coating method Methods 0.000 claims abstract description 24
- 239000011248 coating agent Substances 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 20
- 239000011521 glass Substances 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 19
- 238000005538 encapsulation Methods 0.000 abstract description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 4
- 230000008901 benefit Effects 0.000 abstract description 3
- 230000005284 excitation Effects 0.000 abstract description 2
- 239000000843 powder Substances 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 238000002493 microarray Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 235000013399 edible fruits Nutrition 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910001021 Ferroalloy Inorganic materials 0.000 description 1
- 206010019133 Hangover Diseases 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- ZTXONRUJVYXVTJ-UHFFFAOYSA-N chromium copper Chemical compound [Cr][Cu][Cr] ZTXONRUJVYXVTJ-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000000638 stimulation Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The present invention relates to LED encapsulation technologies field, is related to quantum dot LED and light fixture, and quantum dot LED includes substrate and LED chip, fluorescence coating and quantum dot layer are provided with LED chip, only set above LED chip two layers, it is possible to reduce the glue-line on LED chip top, effectively improve light-out effect；Wherein fluorescence coating is made up of adiabatic gum and fluorescent material, is effectively isolated heat, ensures that quantum dot layer is normal；After LED chip is luminous, the fluorescent material in fluorescence coating is excited, makes light-emitting phosphor, then light continues to be radiated in quantum dot layer, and excitation quantum point lights, and uses quanta point material, can effectively improve color developing effect；Light fixture includes lamp socket, lamp stand, lamp holder and quantum dot LED, and light fixture has above-mentioned advantage compared with prior art.
Description
Technical field
The present invention relates to LED encapsulation technologies field, in particular to quantum dot LED and light fixture.
Background technology
In recent years, the back light unit as liquid crystal display devices such as TV, monitors, LED use have obtained rapidly
Development.LED has become the light source of various uses (for example, the light source of back light unit or the light for commonly lighting or illuminating
Source) main flow.By the way that the LED chip of semiconductor type is arranged in substrate and coats printing opacity tree to semiconductor type LED chip
Fat, LED is used in the form of packaging part, the light-transmissive resin for LED encapsulation piece can be included according to the output that will be realized
The phosphor of the desired color of light.
But LED of the prior art color developing effect is poor.
Therefore it provides a kind of preferable quantum dot LED of color developing effect and light fixture to be solved as those skilled in the art
Important technological problems.
The content of the invention
The first object of the present invention is to provide a kind of quantum dot LED, to alleviate the skill of color developing effect difference in the prior art
Art problem.
A kind of quantum dot LED provided by the invention, including substrate and the LED chip on the substrate；
Fluorescence coating is provided with the top of the LED chip, quantum dot layer is provided with the top of the fluorescence coating.
Further, the upper surface of base plate is provided with the reflection sloping platform around the LED chip, and the reflection is oblique
Platform is in symmetry shape.
Further, the reflection sloping platform inwall is provided with concaveconvex structure, and the concaveconvex structure is surrounded on the LED chip
Around.
Further, it is provided with connected unit at the top of the reflection sloping platform.
Further, it is provided with transparent rack in the connected unit.
Further, the rack side wall is provided with mounting groove.
Further, it is provided with light-passing board in the mounting groove.
Further, the light-passing board is sapphire plate, glass or plastics.
Further, the quantum dot layer outer wall is covered with layer of transparent glue-line.
The second object of the present invention is to provide a light fixture, to alleviate the technical problem of color developing effect difference in the prior art.
A kind of light fixture provided by the invention, including lamp socket, lamp stand, lamp holder and the quantum dot LED；
The lamp holder is connected by the lamp stand with the lamp socket, and the quantum dot LED is located inside the lamp holder.
Beneficial effect：
A kind of quantum dot LED provided by the invention, including substrate and the LED chip on substrate, LED chip are arranged on
On substrate, substrate is that LED chip is energized, and when in use, LED chip can produce larger heat, can by substrate
This heat is quickly excluded, it is ensured that safety of the LED chip under long-term use, if larger heat can not caused by LED chip
It is quick to exclude, it will LED chip is impacted, or even directly damages LED chip；To improve the illuminating effect of LED, LED
Fluorescence coating and quantum dot layer are provided with encapsulating structure in LED chip, fluorescence coating directly contacts with LED chip, quantum dot layer position
In top, only set above LED chip two layers, it is possible to reduce the glue-line on LED chip top, effectively improve out light efficiency
Fruit；Wherein fluorescence coating is made up of adiabatic gum and fluorescent material, can be effectively isolated heat, ensures the normal work of quantum dot layer；LED
After chip light emitting, the fluorescent material in fluorescence coating is excited, makes light-emitting phosphor, then light continues to be radiated in quantum dot layer, swashs
Quantum dot light emitting is sent out, is combined by the three coloured light of LED chip-fluorescent material-quantum dot three, the light of different colours can be formed
According to, and quanta point material is used, it can effectively improve color developing effect.
A kind of light fixture provided by the invention, including lamp socket, lamp stand, lamp holder and quantum dot LED；Lamp holder passes through lamp stand and lamp socket
Connection, quantum dot LED are located inside lamp holder, and light fixture has above-mentioned advantage compared with prior art, no longer superfluous herein to chat.
Brief description of the drawings
, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical scheme of the prior art
The required accompanying drawing used is briefly described in embodiment or description of the prior art, it should be apparent that, in describing below
Accompanying drawing is some embodiments of the present invention, for those of ordinary skill in the art, before creative work is not paid
Put, other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 is a kind of quantum dot LED provided in an embodiment of the present invention embodiment；
Fig. 2 is quantum dot LED provided in an embodiment of the present invention another embodiment；
Fig. 3 is quantum dot LED provided in an embodiment of the present invention another embodiment；
Fig. 4 is quantum dot LED provided in an embodiment of the present invention another embodiment；
Fig. 5 is quantum dot LED provided in an embodiment of the present invention another embodiment；
Fig. 6 is quantum dot LED provided in an embodiment of the present invention another embodiment；
Fig. 7 is quantum dot LED provided in an embodiment of the present invention another embodiment；
Fig. 8 is quantum dot LED provided in an embodiment of the present invention another embodiment.
Icon：100- substrates；101- fluorescence coatings；102- quantum dot layers；200-LED chips；300- reflects sloping platform；
301- concaveconvex structures；302- connected units；400- transparent racks；500- light-passing boards；600- substratum transparents.
Embodiment
Technical scheme is clearly and completely described below in conjunction with accompanying drawing, it is clear that described implementation
Example is part of the embodiment of the present invention, rather than whole embodiments.Based on the embodiment in the present invention, ordinary skill
The every other embodiment that personnel are obtained under the premise of creative work is not made, belongs to the scope of protection of the invention.
In the description of the invention, it is necessary to explanation, term " " center ", " on ", " under ", "left", "right", " vertical ",
The orientation or position relationship of the instruction such as " level ", " interior ", " outer " be based on orientation shown in the drawings or position relationship, merely to
Be easy to the description present invention and simplify description, rather than instruction or imply signified device or element must have specific orientation,
With specific azimuth configuration and operation, therefore it is not considered as limiting the invention.In addition, term " first ", " second ",
" the 3rd " is only used for describing purpose, and it is not intended that instruction or hint relative importance.
In the description of the invention, it is necessary to illustrate, unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " should be interpreted broadly, for example, it may be being fixedly connected or being detachably connected, or be integrally connected；Can
To be mechanical connection or electrical connection；Can be joined directly together, can also be indirectly connected by intermediary, Ke Yishi
The connection of two element internals.For the ordinary skill in the art, with concrete condition above-mentioned term can be understood at this
Concrete meaning in invention.
The present invention is described in further detail below by specific examples of the implementation and with reference to accompanying drawing.
Fig. 1 is a kind of quantum dot LED provided in an embodiment of the present invention embodiment；Fig. 2 provides for the embodiment of the present invention
Quantum dot LED another embodiment；Fig. 3 is quantum dot LED provided in an embodiment of the present invention another embodiment；
Fig. 4 is quantum dot LED provided in an embodiment of the present invention another embodiment；Fig. 5 is quantum provided in an embodiment of the present invention
Point LED another embodiment；Fig. 6 is quantum dot LED provided in an embodiment of the present invention another embodiment；Fig. 7 is
Quantum dot LED provided in an embodiment of the present invention another embodiment；Fig. 8 is quantum dot LED provided in an embodiment of the present invention
Another embodiment.
It is a kind of quantum dot LED provided in an embodiment of the present invention as Figure 1-Figure 8, including substrate 100 and located at substrate
LED chip 200 on 100；The top of LED chip 200 is provided with fluorescence coating 101, and the top of fluorescence coating 101 is provided with quantum dot layer
102。
A kind of quantum dot LED provided in an embodiment of the present invention, including substrate 100 and the LED chip on substrate 100
200, LED chip 200 is set on the substrate 100, and substrate 100 is that LED chip 200 is energized, and when in use, LED core
Piece 200 can produce larger heat, can quickly be excluded this heat by substrate 100, it is ensured that LED chip 200 is in long-term use
Under safety, if larger heat can not be excluded quickly caused by LED chip 200, it will LED chip 200 is impacted, very
To directly breaking-up LED chip 200；It is provided with to improve the illuminating effect of LED, in LED encapsulation structure in LED chip 200 glimmering
Photosphere 101 and quantum dot layer 102, fluorescence coating 101 directly contact with LED chip 200, and quantum dot layer 102 is located at top, only exists
The top of LED chip 200 is set two layers, it is possible to reduce the glue-line on the top of LED chip 200, effectively improves light-out effect；It is wherein glimmering
Photosphere 101 is made up of adiabatic gum and fluorescent material, can be effectively isolated heat, ensures the normal work of quantum dot layer 102；LED core
After piece 200 is luminous, the fluorescent material in fluorescence coating 101 is excited, makes light-emitting phosphor, then light continues to be radiated at quantum dot layer
In 102, excitation quantum point lights, and is combined, can be formed by the three coloured light of LED chip 200- fluorescent material-quantum dot three
The illumination of different colours, and quanta point material is used, it can effectively improve color developing effect.
It should be noted that only having two layers of coatings in LED chip 200, therefore the consumption of light can be effectively reduced, improved
LED illuminating effect.
Wherein, fluorescence coating 101 is made up of adiabatic gum and fluorescent material, so set can by quantum dot and LED chip 200 every
Leave, avoid the heat of LED chip 200 from impacting quantum dot.
Meanwhile in order to improve the service life of quantum dot, it can use barrier water oxygen glue that quantum dot is combined into quantum dot
Layer 102, can be effectively protected quanta point material by obstructing water oxygen glue, enable the work that quantum dot is permanently effective.
Meanwhile reflecting material can be set in the fluorescence coating 101, when LED chip 200 inspires light, light can the
One time was radiated on reflecting material, was then reflected by reflecting material, intensive light can will be concentrated to be separated, when light leads to
After crossing fluorescence coating 101, intensive uneven light can become uniform, and irradiating angle is bigger, so as to improve the illumination of LED effect
Fruit.
After the reflection of reflecting material, the irradiation of uniform light can be made on quantum dot layer 102, by uniformly shining
Penetrate, can effectively improve color developing effect.
Because water, oxygen have a great influence to quantum dot powder material, or even cause quantum dot powder material to fail, therefore pass through resistance
Water proof oxygen glue combines quantum dot powder, can make quantum dot powder long-time normal use by such setting.
Wherein, stimulated whenever by light or electricity, quantum dot powder will send coloured light, and the color of light is by quantum dot
The composition material and size shape of powder determine, if general particle is smaller, can absorb long wave, particle is bigger, can absorb shortwave.2 receive
Meter great little quantum dot, the red of long wave is can absorb, show blueness, the quantum dot of 8 nanosizeds, the indigo plant of absorbable shortwave
Color, show red.This characteristic enables quantum dot to change the light color that light source is sent.Therefore quantum dot layer is used
102- fluorescence coating 101-LED chips 200 can obtain default requirement.
Quantum dot is the nanocrystal of quasi-zero dimension simultaneously, and crystal grain diameter is between 2-10 nanometers, and quantum dot is by electrically or optically
Stimulation the pure monochromatic light of the high quality of various different colours can be sent according to the diameter of quantum dot, therefore can carry
High color developing effect.
Quantum dot has narrow and symmetrical fluorescence emission peak, and is not easy when using simultaneously without hangover, color quantum point
Existing spectrum overlaps, it is possible to increase color developing effect.
Wherein, built-in microarray cavity is provided with heat-radiating substrate 100, heat radiation working medium is filled in built-in microarray cavity, it is interior
It is built-in microarray cavity made of hot channel to put microarray cavity, and pipe thickness is 5 μm.
Meanwhile heat-radiating substrate 100 can be made of highly heat-conductive material, for example, by two kinds of diamond dusts according to quality
Ratio 7：3 with binding agent polyvinyl alcohol by volume 5：1 is well mixed, is put into cold isostatic press, and pressurize 400MPa, pressurize
5min, binding agent is removed under inert gas conditions, wrapped up with chromiumcopper powder and load graphite jig, vacuumize 20min, pressurize
25MPa and in a manner of gradient increased temperature, 600 DEG C first are heated to uniform programming rate 1min, are incubated 1h, then uniformly to rise
Warm speed 1min is heated to 1150 DEG C, is incubated 10min.Cooling procedure uses annealing process, is initially cooled to 600 DEG C, is incubated 5h, then
Natural cooling, finally the sampling demoulding.HIP sintering is carried out to sample again, is forced into 400MPa, temperature is risen to by room temperature
1200 DEG C, soaking time 5h.Cooling procedure is handled using annealing process, is initially cooled to 600 DEG C, is incubated 6h, then natural cooling
Sample is made.For consistency up to 99%, thermal conductivity is 750W/ (mk).
Wherein, substrate 100 can be aluminum nitride ceramic substrate 100, aluminium oxide ceramic substrate 100, gold base 100, silver-based
Plate 100, copper base 100, iron substrate 100, billon substrate 100, silver alloy substrate 100, copper alloy substrate 100, ferroalloy base
Any of plate 100, PPA substrates 100, PCT substrates 100, HTN substrates 100, EMC substrates 100 or SMC substrates 100.
In the alternative of the present embodiment, the upper surface of substrate 100 is provided with the reflection sloping platform around LED chip 200
300, reflection sloping platform 300 is in symmetry shape.
The upper surface of substrate 100 is additionally provided with reflection sloping platform 300, and reflection sloping platform 300 is located at around LED chip 200, and reflects
The height of sloping platform 300 is 1-1.5 times of the height of LED chip 200.
When LED chip 200 works, the light excited can increase irradiating angle by reflecting sloping platform 300, improve out light efficiency
Rate, and change rising angle, so as to improve illuminating effect.
In the alternative of the present embodiment, the reflection inwall of sloping platform 300 is provided with concaveconvex structure 301, and concaveconvex structure 301 is surround
Around LED chip 200.
During the use of LED, it might have certain moisture and enter in LED packagings, the moisture meeting of entrance
The quality of LED chip 200 is influenceed, therefore the reflection inwall of sloping platform 300 is provided with concaveconvex structure 301, concaveconvex structure 301 is surrounded on
Around LED chip 200, the moisture of entrance can be deposited in concaveconvex structure 301.
Specifically, concaveconvex structure 301 can be groove structure, i.e., reflection sloping platform 300 inwall is set fluted, and groove
Opening is smaller, the reflecting effect of the influence reflection sloping platform 300 of minimum degree.
In the alternative of the present embodiment, the top of reflection sloping platform 300 is provided with connected unit 302.
Connected unit 302 is provided with the top of the reflection outer wall of sloping platform 300, can be set by connected unit 302 in reflection sloping platform 300
Other assemblies.
Specifically, offering ladder platform at the top of the outer wall of reflection sloping platform 300, this ladder platform is connected unit 302, is being connected
During miscellaneous part, connected unit 302 not only plays connection function, moreover it is possible to plays a supporting role.
In the alternative of the present embodiment, transparent rack 400 is provided with connected unit 302.
The transparent rack 400 for supporting anti-fluorescence coating 101 and quantum dot layer 102 is provided with connected unit 302, support is set
Transparent shape, improve light-out effect.
Wherein, fluorescence coating 101 and quantum dot layer 102 can be supported by transparent rack 400, can also be in encapsulation process
By aiding in mould bases to support, auxiliary mould bases is then removed.
Air port is offered on support simultaneously, when in use, extraneous air can be passed in and out by air port, to quantum dot LED
Cooled.
In the alternative of the present embodiment, rack side wall is provided with mounting groove.
In actual use, miscellaneous part can be set on transparent rack 400, therefore be provided with rack side wall
Mounting groove.
Mounting groove can be arranged to the groove of the other forms such as neck, be as long as miscellaneous part can be installed by mounting groove
Can.
Light-passing board 500 is provided with the alternative of the present embodiment, in mounting groove.
To improve the quality of quantum dot LED, light-passing board 500 can be set in mounting groove, can be with by light-passing board 500
The light sent is more uniform.
In the alternative of the present embodiment, light-passing board 500 is sapphire plate, glass or plastics.
Because LED light source is spot light, irradiating to be a bright spot afterwards, this amount point very little and very bright is very dazzling,
Be not easy to do room lighting light source, thus need with spread light-passing board 500 by spot light intralamellar part occur repeatedly refraction after it is right
Light is disperseed, and allows spot light to be changed into area source, and because the organosilicon material in material can allow shaped article to produce necessarily
Mist degree, spot light can be covered, the vaporific degree makes overall light efficiency become soft.
In the alternative of the present embodiment, the outer wall of quantum dot layer 102 is covered with layer of transparent glue-line 600.
For protection LED chip 200, fluorescence coating 101 and quantum dot layer 102 so that its can long-term work, covered in its outer wall
It is stamped layer of transparent glue-line 600.
Substratum transparent 600 preferably can come quantum dot layer 102 with air exclusion, avoid oxygen and moisture in air
Quantum dot performance is influenceed, on the other hand, silica gel can be preferably heat-insulated, can better ensure that the service life of quantum dot.
A kind of light fixture provided in an embodiment of the present invention, including lamp socket, lamp stand, lamp holder and quantum dot LED；Lamp holder passes through lamp stand
It is connected with lamp socket, quantum dot LED is located inside lamp holder.
A kind of light fixture provided in an embodiment of the present invention, including lamp socket, lamp stand, lamp holder and quantum dot LED；Lamp holder passes through lamp stand
It is connected with lamp socket, quantum dot LED is located inside lamp holder, and light fixture has above-mentioned advantage compared with prior art, no longer superfluous herein
Chat.
Finally it should be noted that：Various embodiments above is merely illustrative of the technical solution of the present invention, rather than its limitations；To the greatest extent
The present invention is described in detail with reference to foregoing embodiments for pipe, it will be understood by those within the art that：Its according to
The technical scheme described in foregoing embodiments can so be modified, either which part or all technical characteristic are entered
Row equivalent substitution；And these modifications or replacement, the essence of appropriate technical solution is departed from various embodiments of the present invention technology
The scope of scheme.
Claims (10)
- A kind of 1. quantum dot LED, it is characterised in that including：Substrate and the LED chip on the substrate；Fluorescence coating is provided with the top of the LED chip, quantum dot layer is provided with the top of the fluorescence coating.
- 2. quantum dot LED according to claim 1, it is characterised in that the upper surface of base plate is provided with positioned at the LED The reflection sloping platform of chip circumference, the reflection sloping platform is in symmetry shape.
- 3. quantum dot LED according to claim 2, it is characterised in that the reflection sloping platform inwall is provided with concaveconvex structure, The concaveconvex structure is surrounded on around the LED chip.
- 4. quantum dot LED according to claim 2, it is characterised in that be provided with connected unit at the top of the reflection sloping platform.
- 5. quantum dot LED according to claim 4, it is characterised in that be provided with transparent rack in the connected unit.
- 6. quantum dot LED according to claim 5, it is characterised in that the rack side wall is provided with mounting groove.
- 7. quantum dot LED according to claim 6, it is characterised in that be provided with light-passing board in the mounting groove.
- 8. quantum dot LED according to claim 7, it is characterised in that the light-passing board is sapphire plate, glass or modeling Material.
- 9. according to the quantum dot LED described in claim any one of 1-8, it is characterised in that the quantum dot layer outer wall covered with Layer of transparent glue-line.
- 10. a kind of light fixture, it is characterised in that including the quantum dot described in lamp socket, lamp stand, lamp holder and claim any one of 1-9 LED；The lamp holder is connected by the lamp stand with the lamp socket, and the quantum dot LED is located inside the lamp holder.
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| CN201710694249.0A CN107394028A (en) | 2017-08-14 | 2017-08-14 | Quantum dot LED and light fixture |
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| CN201710694249.0A CN107394028A (en) | 2017-08-14 | 2017-08-14 | Quantum dot LED and light fixture |
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| CN107394028A true CN107394028A (en) | 2017-11-24 |
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Application publication date: 20171124 |