CN109449144A - A kind of high colour gamut LED lamp bead and its side-edge type backlight - Google Patents
A kind of high colour gamut LED lamp bead and its side-edge type backlight Download PDFInfo
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- CN109449144A CN109449144A CN201811224348.3A CN201811224348A CN109449144A CN 109449144 A CN109449144 A CN 109449144A CN 201811224348 A CN201811224348 A CN 201811224348A CN 109449144 A CN109449144 A CN 109449144A
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- 239000011324 bead Substances 0.000 title claims abstract description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000000843 powder Substances 0.000 claims abstract description 26
- 239000000741 silica gel Substances 0.000 claims abstract description 23
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 23
- 239000003292 glue Substances 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims description 10
- 239000000853 adhesive Substances 0.000 claims description 9
- 230000001070 adhesive effect Effects 0.000 claims description 9
- 230000005284 excitation Effects 0.000 claims description 9
- 239000004973 liquid crystal related substance Substances 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 6
- 238000001514 detection method Methods 0.000 claims description 6
- 238000000465 moulding Methods 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 6
- 238000005507 spraying Methods 0.000 claims description 6
- 238000012360 testing method Methods 0.000 claims description 6
- 238000003466 welding Methods 0.000 claims description 6
- 238000004806 packaging method and process Methods 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- 229920001342 Bakelite® Polymers 0.000 claims description 3
- 239000004637 bakelite Substances 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 238000011049 filling Methods 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- 230000009977 dual effect Effects 0.000 abstract description 6
- 230000002411 adverse Effects 0.000 abstract description 2
- 239000002096 quantum dot Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 3
- 239000004568 cement Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 241001062009 Indigofera Species 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910003564 SiAlON Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Planar Illumination Modules (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a kind of high colour gamut LED lamp beads, including LED support, blue chip, green light chip, heat-insulated silica gel and fluorescent glue, the LED support two sides of the bottom are separately installed with blue chip and green light chip, heat-insulated silica gel is provided at the top of the blue chip and green light chip, it is provided with fluorescent glue at the top of the LED support, and is enclosed with blue chip and green light chip inside fluorescent glue；By blue, green dual chip collocation red fluorescence powder, chip surface coats heat-insulated silica gel, can not only promote the NTSC color gamut value of display field the present invention, but also can increase LED light output, extends LED service life, promotes the quality of the resistance to various adverse circumstances of lamp bead.
Description
Technical field
The present invention relates to the LED field, specially a kind of high colour gamut LED lamp bead and its side-edge type backlight.
Background technique
LED has the spies such as small in size, the service life is long, good reliability, energy conservation and environmental protection as a kind of emerging solid light source
Point is widely applied in illumination and display field, and with the fast development of LED backlight technology, consumer is to the high color of LED television
The demand in domain etc. increasingly enhances, it is desirable that its color is more abundant, and stereovision is more preferable, color rendition Du Genggao.
Red, green fluorescence powder or yellow fluorescent powder are mixed with packaging plastic either in conventional method, then point is coated in indigo plant
On optical chip, by it is photochromic be compounded to form white light LEDs or three chip hybrid of red, green, blue at white light or quantum dot film,
There are following various defects by quantum dot Guan Jun:
1. commercial fluorescent powder is mostly YAG powder or silicate, nitride phosphor, KSF fluorescent powder, β-at present
SiAlON, colour gamut are only capable of reaching 72%-93%；
2. the launching efficiency of fluorescent powder is low, improving colour gamut can only be realized by increasing dosage, be far from satisfying current
Requirement of the society to more low energy consumption, more high energy efficiency and higher color domain；
3. R, the light mixing of G, B three-color LED chip is difficult, and there are also problems for heat dissipation, while driving control system is more complicated；
4. the quanta point material of Current commercial is easy to be influenced by temperature, humidity and causes to fail, simultaneously because quantum
Point preparation process is complicated, and low output, stability is poor, and price is higher, fails to popularize completely.
5. LED on the market is using conventional package form at present, direct encapsulating encapsulation, not only package brightness exports drop
Low and bad environments shorten the working life.
Summary of the invention
It is above-mentioned in order to overcome the purpose of the present invention is to provide a kind of high colour gamut LED lamp bead and its side-edge type backlight
Technical problem, by blue, green dual chip collocation red fluorescence powder, chip surface coats heat-insulated silica gel, can both promote display neck
The NTSC color gamut value in domain, and LED light output can be increased, extend LED service life, promotes the product of the resistance to various adverse circumstances of lamp bead
Matter.
The purpose of the present invention can be achieved through the following technical solutions:
A kind of high colour gamut LED lamp bead, including LED support, blue chip, green light chip, heat-insulated silica gel and fluorescent glue, it is described
LED support two sides of the bottom are separately installed with blue chip and green light chip, are provided at the top of the blue chip and green light chip
Heat-insulated silica gel, the LED support top is provided with fluorescent glue, and blue chip and green light chip are enclosed with inside fluorescent glue.
Specific step is as follows by the preparation process of the high colour gamut LED lamp bead:
Step 1: LED support apparent size, film LED support detection, cleaning and drying: are detected by Quadratic Finite Element measuring instrument
Thickness measuring instrument detects LED support plating thickness, and metallographic microscope detects LED support oxidative phenomena, carries out plasma-based to LED support
It is dried after cleaning；
Step 2: die bond: then the crystal-bonding adhesive on LED support point uses bakelite vacuum slot by blue chip and green light
Chip picks up shift position, and blue chip and green light chip are arranged to LED support crystal-bonding adhesive top respectively；
Step 3: baking: crystal-bonding adhesive is dried, baking temperature is maintained at 150 DEG C, baking time 2h；
Step 4: the conductive region on the pad and LED support on blue chip and green light chip bonding wire: is used into metal
Line is welded, and the size and welding pulling force of test pad are completed in welding；
Step 5: heat-insulated silica gel is covered on blue chip and green light chip surface by the spraying of JET valve glue spraying equipment, is in
Hemispherical and side cannot be flowed to, be pressed using molding apparatus, thickness control is in 0.1~90um, by blue chip and green
The heat-insulated silica gel on optical chip surface carries out baking-curing respectively, temperature control at 80 DEG C~100 DEG C, baking time be 20min~
30min；
Step 6: sealing: being mixed into appropriate red fluorescence powder in glue, uses in the molding cup-shaped region of LED support institute glimmering
After optical cement carries out uniform encapsulating filling, baking-curing, temperature is 120 DEG C -150 DEG C, baking time 4-7h；
Step 7: test: photoelectric parameter, the detection outer dimension of LED lamp bead are detected, while according to customer requirement to LED
Product is sorted, and sorting is completed to carry out counting packaging using antistatic reel.
As a further solution of the present invention: the excitation wavelength of the blue chip is 440nm-470nm, the green light core
The excitation wavelength of piece is 500nm-545nm, and the excitation wavelength of the red fluorescence powder is 620nm-650nm.
As a further solution of the present invention: the spacing between the blue chip and green light chip is 0.05mm-
0.6mm。
A kind of side-edge type backlight, including metal backing, reflector plate, light guide plate, diaphragm, liquid crystal display panel and lamp bar, it is described
Reflector plate is installed at the top of metal backing, light guide plate is installed at the top of the reflector plate, diaphragm is installed at the top of the light guide plate,
Liquid crystal display panel is installed at the top of the diaphragm, the light guide plate side is equipped with lamp bar.
As a further solution of the present invention: the lamp bar side is uniformly bonded with several LED lamp beads.
Beneficial effects of the present invention: the present invention proposes a kind of high colour gamut LED lamp bead and its side-edge type backlight, i.e. blue light core
The high colour gamut LED lamp bead of piece, green light chip collocation red fluorescence powder, and in the hemispheric heat-insulated silica gel of chip surface spot printing, it is excellent
Gesture is as follows:
1. using blue chip, the green light chip collocation compound obtained LED side-edge type backlight of red fluorescence powder, colour gamut is high
Up to 100%-120%；
2. using simpler than red, green, blue three-color LED in blue, green dual chip collocation red fluorescence powder structure, in technique compared with
It is easy to accomplish；
3. comparing quantum dot film and quantum dot pipe, blue, green dual chip collocation red fluorescence powder is realizing the same of superelevation colour gamut
When be also equipped with that stability is good, the advantages such as at low cost；
4. coating heat-insulated silica gel in chip surface, by changing the direction of propagation of light, total reflection effect can be effectively inhibited
It answers, is conducive to outside more light emittings to LED, increase LED light output；
5. coat heat-insulated silica gel in chip surface, fluorescent powder will not directly contact chip to reducing heat to fluorescent powder
The influence of quantum efficiency and reliability, at the same guarantee light be uniformly distributed and CIE x, y do not disperse.
Detailed description of the invention
In order to facilitate the understanding of those skilled in the art, the present invention will be further described below with reference to the drawings.
Fig. 1 is the high colour gamut LED lamp bead structural schematic diagram of the present invention.
Fig. 2 is the embedded back light source structure schematic diagram of the present invention.
In figure: 1, LED support；2, blue chip；3, green light chip；4, heat-insulated silica gel；5, fluorescent glue；6, metal backing；
7, reflector plate；8, light guide plate；9, diaphragm；10, liquid crystal display panel；11, lamp bar.
Specific embodiment
Technical solution of the present invention is clearly and completely described below in conjunction with embodiment, it is clear that described reality
Applying example is only a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, this field is general
Logical technical staff all other embodiment obtained without creative efforts belongs to what the present invention protected
Range.
Please refer to shown in Fig. 1-2, a kind of high colour gamut LED lamp bead, including LED support 1, blue chip 2, green light chip 3, every
Hot silica gel 4 and fluorescent glue 5,1 two sides of the bottom of LED support are separately installed with blue chip 2 and green light chip 3, the material of LED support 1
Matter can be ceramics, a kind of in PCT, EMC, SMC, and shape can be the shape of rectangular, strip, circle or other Regularias,
Specification can be 4010,4014,7020 and 7016,1-3 green light chip of 1 collocation of blue chip 2 either 1 green light core
Piece 3 is arranged in pairs or groups 1-3 blue chip 2, is provided with heat-insulated silica gel 4 at the top of blue chip 2 and green light chip 3, is set at the top of LED support 1
It is equipped with fluorescent glue 5, and is enclosed with blue chip 2 and green light chip 3 inside fluorescent glue 5.
Specific step is as follows by the preparation process of the high colour gamut LED lamp bead:
Step 1: the detection of LED support 1, cleaning and drying: detecting 1 apparent size of LED support by Quadratic Finite Element measuring instrument,
Film thickness measuring instrument detect 1 plating thickness of LED support, metallographic microscope detect 1 oxidative phenomena of LED support, to LED support 1 into
It is dried after the cleaning of row plasma-based；
Step 2: die bond: the crystal-bonding adhesive on 1 point of LED support, then using bakelite vacuum slot by blue chip 2 and green
Optical chip 3 picks up shift position, and blue chip 2 and green light chip 3 are arranged to 1 crystal-bonding adhesive top of LED support respectively；
Step 3: baking: crystal-bonding adhesive is dried, baking temperature is maintained at 150 DEG C, baking time 2h；
Step 4: bonding wire: the conductive region on the pad and LED support 1 on blue chip 2 and green light chip 3 is used
Metal wire is welded, and the size and welding pulling force of test pad are completed in welding；
Step 5: heat-insulated silica gel 4 is covered on 3 table of blue chip 2 and green light chip by the spraying of JET valve glue spraying equipment
Face, it is hemispherical and side cannot be flowed to, it is pressed using molding apparatus, thickness control is in 0.1~90um, by blue chip
2 and the heat-insulated silica gel 4 on 3 surface of green light chip carry out baking-curing respectively, temperature control is in 80 DEG C~100 DEG C, baking time
20min~30min；
Step 6: sealing: being mixed into appropriate red fluorescence powder in glue, uses in the 1 molding cup-shaped region of institute of LED support glimmering
After optical cement 5 carries out uniform encapsulating filling, baking-curing, temperature is 120 DEG C -150 DEG C, baking time 4-7h；
Step 7: test: photoelectric parameter, the detection outer dimension of LED lamp bead are detected, while according to customer requirement to LED
Product is sorted, and sorting is completed to carry out counting packaging using antistatic reel.
The excitation wavelength of blue chip 2 is 440nm-470nm, and the excitation wavelength of green light chip 3 is 500nm-545nm, red
The excitation wavelength of color fluorescent powder is 620nm-650nm.
Spacing between blue chip 2 and green light chip 3 is 0.05mm-0.6mm.
A kind of side-edge type backlight, including metal backing 6, reflector plate 7, light guide plate 8, diaphragm 9, liquid crystal display panel 10 and lamp bar
11, reflector plate 7 is installed at the top of metal backing 6, light guide plate 8 is installed at the top of reflector plate 7, diaphragm is installed at the top of light guide plate 8
9, liquid crystal display panel 10 is installed at the top of diaphragm 9,8 side of light guide plate is equipped with lamp bar 11, and lamp bar 11 is arranged in a manner of side entering type
Light incident sides of the cloth in light guide plate 8.
11 side of lamp bar is uniformly bonded with several LED lamp beads, convenient for actual use.
The present invention is designed by reasonable structure, and the present invention proposes a kind of high colour gamut LED lamp bead and its side-edge type backlight,
I.e. blue chip 2, green light chip 3 arrange in pairs or groups red fluorescence powder high colour gamut LED lamp bead, and chip surface spot printing it is hemispheric every
Hot silica gel 4, advantage is as follows:
1. using blue chip 2, the collocation compound obtained LED side-edge type backlight of red fluorescence powder of green light chip 3, colour gamut
Up to 100%-120%；
2. using simpler than red, green, blue three-color LED in blue, green dual chip collocation red fluorescence powder structure, in technique compared with
It is easy to accomplish；
3. comparing quantum dot film and quantum dot pipe, blue, green dual chip collocation red fluorescence powder is realizing the same of superelevation colour gamut
When be also equipped with that stability is good, the advantages such as at low cost；
4. coating heat-insulated silica gel 4 in chip surface, by changing the direction of propagation of light, total reflection effect can be effectively inhibited
It answers, is conducive to outside more light emittings to LED, increase LED light output；
5. coat heat-insulated silica gel 4 in chip surface, fluorescent powder will not directly contact chip to reducing heat to fluorescence
The influence of powder quantum efficiency and reliability, at the same guarantee light be uniformly distributed and CI E x, y do not disperse.
Present invention disclosed above preferred embodiment is only intended to help to illustrate the present invention.There is no detailed for preferred embodiment
All details are described, are not limited the invention to the specific embodiments described.Obviously, according to the content of this specification,
It can make many modifications and variations.These embodiments are chosen and specifically described to this specification, is in order to better explain the present invention
Principle and practical application, so that skilled artisan be enable to better understand and utilize the present invention.The present invention is only
It is limited by claims and its full scope and equivalent.
Claims (6)
1. a kind of high colour gamut LED lamp bead, which is characterized in that including LED support (1), blue chip (2), green light chip (3), every
Hot silica gel (4) and fluorescent glue (5), LED support (1) two sides of the bottom are separately installed with blue chip (2) and green light chip
(3), it is provided with heat-insulated silica gel (4) at the top of the blue chip (2) and green light chip (3), setting at the top of the LED support (1)
Have fluorescent glue (5), and is enclosed with blue chip (2) and green light chip (3) inside fluorescent glue (5).
2. a kind of high colour gamut LED lamp bead according to claim 1, which is characterized in that the preparation work of the high colour gamut LED lamp bead
Specific step is as follows for skill:
Step 1: LED support (1) detection, cleaning and drying: detecting LED support (1) apparent size by Quadratic Finite Element measuring instrument,
Film thickness measuring instrument detects LED support (1) plating thickness, and metallographic microscope detects LED support (1) oxidative phenomena, to LED support
(1) it is dried after carrying out plasma-based cleaning；
Step 2: die bond: the crystal-bonding adhesive on LED support (1) point, then using bakelite vacuum slot by blue chip (2) and green
Optical chip (3) picks up shift position, and blue chip (2) and green light chip (3) are arranged to LED support (1) crystal-bonding adhesive top respectively；
Step 3: baking: crystal-bonding adhesive is dried, baking temperature is maintained at 160 DEG C, baking time 2h；
Step 4: bonding wire: the conductive region on the pad and LED support (1) on blue chip (2) and green light chip (3) is made
It is welded with metal wire, the size and welding pulling force of test pad are completed in welding；
Step 5: heat-insulated silica gel (4) are covered on blue chip (2) and green light chip (3) table by the spraying of JET valve glue spraying equipment
Face, it is hemispherical and side cannot be flowed to, it is pressed using molding apparatus, thickness control is in 0.1~90um, by blue chip
(2) and the heat-insulated silica gel (4) on green light chip (3) surface carries out baking-curing respectively, and temperature controls the baking at 80 DEG C~100 DEG C
Time is 20min~30min；
Step 6: sealing: being mixed into appropriate red fluorescence powder in glue, uses fluorescence in the molding cup-shaped region of LED support (1) institute
After glue (5) carries out uniform encapsulating filling, baking-curing, temperature is 120 DEG C -150 DEG C, baking time 4-7h；
Step 7: test: photoelectric parameter, the detection outer dimension of LED lamp bead are detected, while according to customer requirement to LED product
It is sorted, sorting is completed to carry out counting packaging using antistatic reel.
3. a kind of high colour gamut LED lamp bead according to claim 2, which is characterized in that the excitation wave of the blue chip (2)
A length of 440nm-470nm, the excitation wavelength of the green light chip (3) are 500nm-545nm, the excitation wave of the red fluorescence powder
A length of 620nm-650nm.
4. a kind of high colour gamut LED lamp bead according to claim 2, which is characterized in that the blue chip (2) and green light core
Spacing between piece (3) is 0.05mm-0.6mm.
5. a kind of side-edge type backlight, which is characterized in that including metal backing (6), reflector plate (7), light guide plate (8), diaphragm
(9), liquid crystal display panel (10) and lamp bar (11), metal backing (6) top are equipped with reflector plate (7), reflector plate (7) top
Portion is equipped with light guide plate (8), is equipped with diaphragm (9) at the top of the light guide plate (8), is equipped with liquid crystal surface at the top of the diaphragm (9)
Plate (10), light guide plate (8) side are equipped with lamp bar (11).
6. a kind of side-edge type backlight according to claim 5, which is characterized in that lamp bar (11) side is uniformly bonded
There are several LED lamp beads.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811224348.3A CN109449144A (en) | 2018-10-19 | 2018-10-19 | A kind of high colour gamut LED lamp bead and its side-edge type backlight |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811224348.3A CN109449144A (en) | 2018-10-19 | 2018-10-19 | A kind of high colour gamut LED lamp bead and its side-edge type backlight |
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| CN109449144A true CN109449144A (en) | 2019-03-08 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112289910A (en) * | 2020-10-19 | 2021-01-29 | 刘成禹 | LED electrodeless color temperature modulation light source and manufacturing process thereof |
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2018
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| CN107123643A (en) * | 2017-07-04 | 2017-09-01 | 安徽芯瑞达科技股份有限公司 | The high colour gamut LED lamp bead and its backlight of a kind of bluish-green dual chip collocation red fluorescence powder |
| CN108548105A (en) * | 2018-04-27 | 2018-09-18 | 南昌大学 | A kind of yellow light LED encapsulating structure and packaging method |
| CN108666408A (en) * | 2018-07-04 | 2018-10-16 | 天津中环电子照明科技有限公司 | Even smooth heat-insulating type quantum dot LED packagings and lamps and lanterns |
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