CN207009476U - A kind of high-power LED integrated chip encapsulating structure - Google Patents
A kind of high-power LED integrated chip encapsulating structure Download PDFInfo
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- CN207009476U CN207009476U CN201720731857.XU CN201720731857U CN207009476U CN 207009476 U CN207009476 U CN 207009476U CN 201720731857 U CN201720731857 U CN 201720731857U CN 207009476 U CN207009476 U CN 207009476U
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- power led
- substrate
- chip
- led chip
- optical glass
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Abstract
The utility model discloses kind of a high-power LED integrated chip encapsulating structure, including：High-power LED chip, substrate, enclosure wall, optical glass, the high-power LED chip is affixed on substrate, high-power LED chip is connected with electrode or high-power LED chip with substrate circuit layer, enclosure wall side and substrate connection, opposite side is connected with optical glass, optical glass, enclosure wall and substrate surround one and air-locked cavity are fully sealed, the high-power LED chip is located in the cavity, the inert gas of insulating heat-conductive is filled with the cavity, optical glass is interior to scribble phosphor powder layer doped with fluorescent material or optical glass surface.The utility model can not have to fluorescent glue or few use, reduce cost, and due to the reduction of fluorescent glue, amount of light improves, and work is more preferably reliable and stable, and the sealing of optical glass is more firm.
Description
Technical field
It the utility model is related to a kind of encapsulation of the LED chip in field of photoelectric technology, more particularly to a kind of high-power LED
Integrated chip encapsulating structure.
Background technology
LED light source has luminous efficiency height, power consumption is few, service life is long, security reliability is strong, is advantageous to the spies such as environmental protection
Property, particularly become the favorite of global illumination market in global today for advocating energy-conserving and environment-protective, LED illumination.
At present in high-brightness white-light led fields, it is that be attached to chip has first to prepare led integrating packaging module methods
On high reflection substrate, then the electrode of chip is connected on support or circuit by way of wire bonding, afterwards on chip
Face, which applies, has mixed the silica gel of fluorescent material, after curing molding, then applies one layer of silica gel not mixed outside and is used to protect gold thread or electricity
Pole.Although this traditional packaged type is simple, following unfavorable factor be present：
1. cost is high, existing high-power LED integrated chip encapsulation, single product is relative to need high amount of packaging plastic
Water, and the good glue of mesh in the market reliability is mostly import, price is very high.
2. light-out effect is undesirable, existing high-power LED integrated chip encapsulation, due to fluorescent glue and the thickness of external sealant
At least all in more than 0.5mm, the translucency of glue gradually reduces with the increase of thickness, so that some optical attenuation is in glue
In body, because the thermal conductivity of glue itself is very poor, the light of decay is transformed into heat, accelerates the decay speed of the material such as glue and chip
Degree.
3. stability is undesirable, because integrated LED light source packaging density is high, and light-emitting area is bigger than in general LED light source very
It is more, in use, colloid due to internal stress caused by temperature can than low power or single LED light source it is much larger, this
Kind stress either can be bonded chip with chip wire-break between chip and support or chip and circuit, so as to cause to collect
Do not overcome this stress into the dead lamp of light source, or colloid and cause led integrated optical source facial cleft glue (glue splits).
4. weatherability is bad, because silica gel is the main seal protection materials of led encapsulation, but because silica gel is without 100%
Air-tightness, be exactly the unfavorable gas or harmful in air during this factor causes led integrated optical source long-term uses
Chemical element causes fatal harm to substrate reflecting layer through layer of silica gel, for example, silvered substrates vulcanization reaction, oxidation reaction etc. or
Person causes unfavorable chemical reaction etc. to other technique reflectings surface, and these can all have a strong impact on the reflectivity of substrate, so as to cause
Phenomena such as LED light source luminous flux exports degradation, and light source chromaticity coordinates is seriously offset, or pollution encapsulation packing colloid, reduce former
Some physics and chemical characteristic.
5. encapsulated for the white light or ultraviolet source of the encapsulation of UV chip excitated fluorescent powder, because ultraviolet light encapsulates
To encapsulating materials such as encapsulation glue, binding material, fluorescent material, substrates, there is very high requirement, conventional encapsulant typically all can not
Meet to require, by the easy aging of the irradiation of ultraviolet light, related material property changes：Common packaging plastic yellow, carbon
Change, binding material failure, phenomena such as light source light decay, color drift.
Utility model content
In order to solve the above problems, the utility model provides a kind of high-power LED integrated chip encapsulating structure.
Technical scheme is used by the utility model solves its technical problem：
A kind of high-power LED integrated chip encapsulating structure, including：High-power LED chip, substrate, enclosure wall, optical glass,
The high-power LED chip is affixed on substrate, and high-power LED chip connects with electrode or high-power LED chip with substrate circuit layer
Connect, enclosure wall side and substrate connection, opposite side are connected with optical glass, optical glass, enclosure wall, are surrounded one with substrate and are fully sealed
Air-locked cavity, the high-power LED chip are located in the cavity, and the inert gas of insulating heat-conductive is filled with the cavity,
In optical glass phosphor powder layer is scribbled doped with fluorescent material or optical glass surface.
The utility model also includes fluorescent colloid, and high-power LED chip is placed among fluorescent colloid or fluorescent colloid applies
Overlay on high-power LED chip surface, the thickness of the fluorescent colloid above high-power LED chip is less than 0.3mm.
The baseplate material is aluminium base or copper base or ceramic substrate, and substrate is individual layer or multilayer.
The position that the substrate fixes high-power LED chip is provided with the chip circuit that high-power LED docks.
The optical glass has high transmission rate, and surface carries out roughening treatment.
The high-power LED chip is fixed on substrate by elargol or tin eutectic welding procedure.
Adjacent high-power LED chip is connected by wire, and the high-power LED chip positioned at both ends is connected by wire and electrode
Connect.
Substrate is integrally formed with enclosure wall.
The beneficial effects of the utility model are：
1. reducing cost, the high-power LED integrated chip encapsulating structure of the structure can not have to fluorescent glue (for ultraviolet core
Sheet laser encapsulates, and directly saves packaging plastic) or with a small amount of fluorescent glue so that the thickness of fluorescent glue can accomplish 0.3mm with
Under, it is no longer necessary to the spot printing of external sealant, have to the dosage of glue than ever be greatly reduced very much and colloid thickness also have it is very big
Reduce；
2. amount of light is lifted：There is the thickness of fluorescent colloid in the utility model significantly reduces very much, exists so as to reduce light
The decay of colloid, compared to the lifting that traditional encapsulating structure light emission rate has certain amplitude；
3. lift the quality of light：In the utility model, it is used as by using the optical glass by surface coarsening processing
Smooth surface, the lighting area of the exiting surface of relative increase, amount of light is lifted, simultaneously because the roughening of exiting surface, makes by the face
Scattering or diffusing reflection occur for light, the full and uniform mixing of the spectrum by the face made, can so substantially improve tradition
Light source edge yellowish that light source is deposited always or greening this phenomenon；
4. reliability is lifted：In the utility model so that between high-power LED chip and high-power LED chip, high-power
The wire connected between led chips and electrode, it is completely disposed in the cavity of sealing and outside fluorescent colloid, avoids fluorescent colloid
Internal stress is endangered to caused by wire, and relatively conventional method for packing, wire is completely disposed among colloid, can not avoid colloid
Stress endangers to caused by wire；
5. weatherability is lifted：The utility model is the medium as protection with optical glass, the relative envelope of glass air-tightness
Fill that glue will be good is a lot, can prevent unfavorable gas or element in light source local environment completely through glassy layer to the inside
Substrate, light emitting diode, encapsulation glue cause fatal harm, such as silvered substrates vulcanization reaction, oxidation reaction etc. or to it
Its technique reflecting surface causes unfavorable chemical reaction etc., and these can all have a strong impact on the reflectivity of substrate, so as to cause LED light source
Phenomena such as luminous flux exports degradation, and light source chromaticity coordinates is seriously offset, while above-mentioned unfavorable factor can be overcome completely to core
Harm caused by piece, fluorescent glue, electrode, wire；
6. the big gas of the big gas of filling inert gas, refraction coefficient, thermal conductivity ratio air in cavity, all can be corresponding
Lifting encapsulating products performance：Filling inert gas can further lift the oxidation resistance of product；Fill heat-conducting gas
Lift the heat dispersion of product；The big gas of refractive index is filled, light emission rate can be lifted.
Brief description of the drawings
The utility model is further illustrated with reference to the accompanying drawings and examples：
Fig. 1 is the schematic diagram of the first embodiment of the present utility model；
Fig. 2 is the schematic diagram of second of embodiment of the present utility model；
Fig. 3 is the schematic diagram of the third embodiment of the present utility model；
Fig. 4 is the schematic diagram of the 4th kind of embodiment of the present utility model；
Fig. 5 is the schematic diagram of the 5th kind of embodiment of the present utility model；
Fig. 6 is the top view of the first embodiment of the present utility model；
Fig. 7 is the top view of second of embodiment of the present utility model；
Fig. 8 is the top view of the third embodiment of the present utility model；
Fig. 9 is the top view of the 4th kind of embodiment of the present utility model；
Figure 10 is the top view of the 5th kind of embodiment of the present utility model.
Embodiment
Reference picture 1 and Fig. 6, it as shown is the schematic diagram of the first embodiment of the present utility model, the utility model
It is a kind of high-power LED integrated chip encapsulating structure, including：High-power LED chip 1, substrate 2, enclosure wall 3, optical glass 4, institute
State high-power LED chip 1 to be affixed on substrate 2, high-power LED chip 1 and electrode 5 or high-power LED chip 1 and the circuit of substrate 2
Layer 6 is connected, and the side of enclosure wall 3 is connected with substrate 2, and opposite side is connected with optical glass 4, optical glass 4, enclosure wall 3, is enclosed with substrate 2
Air-locked cavity is fully sealed into one, the high-power LED chip 1 is located in the cavity, is led in the cavity filled with insulation
The inert gas of heat, optical glass 4 is interior to scribble phosphor powder layer doped with fluorescent material or the surface of optical glass 4.The sheet of said structure
Utility model has following technique effect：
1. reducing cost, the integrated encapsulation structure of high-power LED chip 1 of the structure can not have to fluorescent glue and packaging plastic
(as being applied to ultraviolet chip light-source encapsulation, directly saving packaging plastic, improving stability), saves cost；
2. stability is lifted：Relatively conventional packaging technology, encapsulation glue is directly eliminated, prevented because glue stress pair
Injury caused by the parts such as chip, lift the stability of product；
3. weatherability is lifted：The utility model is the medium as protection with optical glass 4, the relative envelope of glass air-tightness
Fill that glue will be good is a lot, can prevent unfavorable gas or element in light source local environment completely through glassy layer to the inside
Substrate 2, light emitting diode, encapsulation glue cause fatal harm, such as the vulcanization reaction of silvered substrates 2, oxidation reaction etc. or right
Other technique reflectings surface cause unfavorable chemical reaction etc., and these can all have a strong impact on the reflectivity of substrate 2, so as to cause led
Phenomena such as luminous flux of light source exports degradation, and light source chromaticity coordinates is seriously offset, while above-mentioned unfavorable factor can be overcome completely
To harm caused by chip, fluorescent glue, electrode 5, wire 7；
4. the big gas of the big gas of filling inert gas, refraction coefficient, thermal conductivity ratio air in cavity, all can be corresponding
Lifting encapsulating products performance：Filling inert gas can further lift the oxidation resistance of product；Fill heat-conducting gas
Lift the heat dispersion of product；The big gas of refractive index is filled, light emission rate can be lifted.
The material of substrate 2 is aluminium base 2 or copper base 2 or ceramic substrate 2, and substrate 2 is individual layer or multilayer；The base
The position that plate 2 fixes high-power LED chip 1 is provided with the chip circuit that high-power LED docks；The high-power LED chip 1 is logical
Cross elargol or tin eutectic welding procedure is fixed on a substrate 2；High-power LED chip 1 positioned at both ends passes through wire 7 and electrode 5
Connection, motor is between substrate 2 and enclosure wall 3.
The optical glass 4 has a high transmission rate, and surface carries out roughening treatment, so can relative increase exiting surface
Lighting area, amount of light is lifted, simultaneously because the roughening of exiting surface, makes scattering or diffusing reflection occurs by the light in the face,
The full and uniform mixing of the spectrum by the face that makes, can so substantially improve the light source edge color that conventional light source is deposited always
Jaundice or greening this phenomenon.
Reference picture 2 and Fig. 7, the schematic diagram of second of embodiment of the present utility model as shown is, itself and the first
Embodiment is roughly the same, and difference is also to include fluorescent colloid 8, and high-power LED chip 1 is placed among fluorescent colloid 8,
The thickness of the fluorescent colloid 8 of the top of high-power LED chip 1 is less than 0.3mm, passes through wire 7 between adjacent high-power LED chip 1
Connection.The embodiment has to the dosage of glue than ever to be greatly reduced and colloid thickness also has very big reduction very much so that
The wire 7 connected between high-power LED chip 1 and high-power LED chip 1, between high-power LED chip 1 and electrode 5, completely
It is placed in the cavity of sealing and outside fluorescent colloid, avoids fluorescent colloid internal stress to harm caused by wire 7, it is relatively conventional
Method for packing, wire 7 are completely disposed among colloid, can not avoid the stress of colloid to harm, stable performance caused by wire 7
Reliably.Simultaneously as the thickness of fluorescent glue is thinner, light loss of the light in glue is reduced, lifts light emission rate.
Reference picture 3 and Fig. 8, as shown be the schematic diagram of the third embodiment of the present utility model, its with second
Embodiment is roughly the same, and difference is that electrode is arranged in enclosure wall 3.
Reference picture 4 and Fig. 8, as shown be the schematic diagram of the 4th kind of embodiment of the present utility model, its with second
Embodiment is roughly the same, and difference is that high-power LED chip 1 is directly connected with the chip circuit set on substrate 2.
Reference picture 5 and Figure 10, as shown be the schematic diagram of the 5th kind of embodiment of the present utility model, its with second
Embodiment is roughly the same, and difference is that high-power LED chip 1 is directly connected with the chip circuit set on substrate 2, and
And fluorescent colloid 8 is coated in the surface of high-power LED chip 1.
Certainly, in order to lift sealing property of the present utility model, substrate 2 and enclosure wall 3 can be arranged to be integrally formed, also
It can reach same even more preferably effect.
Above-described embodiment is preferred scheme of the present utility model, and the utility model can also have other embodiments.Ability
The technical staff in domain can also make equivalent variations or replacement on the premise of without prejudice to the utility model spirit, these equivalent changes
Type or replacement are all contained in the scope set by the application claim.
Claims (8)
- A kind of 1. high-power LED integrated chip encapsulating structure, it is characterised in that including：High-power LED chip, substrate, enclosure wall, light Glass is learned, the high-power LED chip is affixed on substrate, high-power LED chip and electrode or high-power LED chip and substrate electricity The connection of road floor, enclosure wall side and substrate connection, opposite side are connected with optical glass, and optical glass, enclosure wall, with substrate to surround one complete Hermetically sealed air-locked cavity, the high-power LED chip are located in the cavity, and the inertia of insulating heat-conductive is filled with the cavity Gas, optical glass is interior to scribble phosphor powder layer doped with fluorescent material or optical glass surface.
- 2. a kind of high-power LED integrated chip encapsulating structure as claimed in claim 1, it is characterised in that it also includes fluorescent glue Body, high-power LED chip is placed among fluorescent colloid or fluorescent colloid is coated in high-power LED chip surface, high-power LED The thickness of fluorescent colloid above chip is less than 0.3mm.
- 3. a kind of high-power LED integrated chip encapsulating structure as claimed in claim 1, it is characterised in that the baseplate material is Aluminium base or copper base or ceramic substrate, substrate are individual layer or multilayer.
- 4. a kind of high-power LED integrated chip encapsulating structure as claimed in claim 1, it is characterised in that the substrate is fixed big The position of power led chips is provided with the chip circuit of high-power LED docking.
- A kind of 5. high-power LED integrated chip encapsulating structure as claimed in claim 1, it is characterised in that the optical glass tool There is high transmission rate, and surface carries out roughening treatment.
- A kind of 6. high-power LED integrated chip encapsulating structure as claimed in claim 1, it is characterised in that the high-power LED Chip is fixed on substrate by elargol or tin eutectic welding procedure.
- A kind of 7. high-power LED integrated chip encapsulating structure as claimed in claim 1, it is characterised in that adjacent high-power LED Chip is connected by wire, and the high-power LED chip positioned at both ends is connected by wire with electrode.
- 8. a kind of high-power LED integrated chip encapsulating structure as claimed in claim 1, it is characterised in that substrate and enclosure wall one Shaping.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720731857.XU CN207009476U (en) | 2017-06-21 | 2017-06-21 | A kind of high-power LED integrated chip encapsulating structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720731857.XU CN207009476U (en) | 2017-06-21 | 2017-06-21 | A kind of high-power LED integrated chip encapsulating structure |
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| Publication Number | Publication Date |
|---|---|
| CN207009476U true CN207009476U (en) | 2018-02-13 |
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ID=61448463
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| CN201720731857.XU Active CN207009476U (en) | 2017-06-21 | 2017-06-21 | A kind of high-power LED integrated chip encapsulating structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107248547A (en) * | 2017-06-21 | 2017-10-13 | 鸿宝科技股份有限公司 | A kind of high-power LED integrated chip encapsulating structure and its method for packing |
| WO2019219095A1 (en) * | 2018-05-17 | 2019-11-21 | 海迪科（南通）光电科技有限公司 | Integrated led packaging form which uses wlp, and preparation method therefor |
-
2017
- 2017-06-21 CN CN201720731857.XU patent/CN207009476U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107248547A (en) * | 2017-06-21 | 2017-10-13 | 鸿宝科技股份有限公司 | A kind of high-power LED integrated chip encapsulating structure and its method for packing |
| WO2019219095A1 (en) * | 2018-05-17 | 2019-11-21 | 海迪科（南通）光电科技有限公司 | Integrated led packaging form which uses wlp, and preparation method therefor |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: High-power LED chip integrated packaging structure Effective date of registration: 20181221 Granted publication date: 20180213 Pledgee: China Everbright Bank Zhongshan branch Pledgor: HOMBO Technology Public Limited Company Registration number: 2018440020089 |
|
| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20191224 Granted publication date: 20180213 Pledgee: China Everbright Bank Zhongshan branch Pledgor: HOMBO Technology Public Limited Company Registration number: 2018440020089 |
|
| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: High-power LED chip integrated packaging structure Effective date of registration: 20191227 Granted publication date: 20180213 Pledgee: China Everbright Bank Zhongshan branch Pledgor: HOMBO Technology Public Limited Company Registration number: Y2019980001363 |
|
| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20211110 Granted publication date: 20180213 Pledgee: China Everbright Bank Co., Ltd. Zhongshan branch Pledgor: Hongbao Technology Co., Ltd Registration number: Y2019980001363 |