CN207529973U - Quantum dot LED component, backlight lamp bar and backlight module - Google Patents
Quantum dot LED component, backlight lamp bar and backlight module Download PDFInfo
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- CN207529973U CN207529973U CN201721667175.3U CN201721667175U CN207529973U CN 207529973 U CN207529973 U CN 207529973U CN 201721667175 U CN201721667175 U CN 201721667175U CN 207529973 U CN207529973 U CN 207529973U
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Abstract
The utility model discloses a kind of quantum dot LED components, including LED support, LED chip, light transmission thermal insulation layer and luminescent layer, the LED chip is set on LED support, the light transmission thermal insulation layer is coated on the outer surface of LED chip, the top of the light transmission thermal insulation layer is equipped with luminescent layer, and the luminescent layer is contacted with LED support part.Correspondingly, the utility model also provides a kind of backlight lamp bar and backlight module using above-mentioned quantum dot LED component., can be with isolating chip and quantum dot light emitting layer to reduce destruction of the chip temperature to quantum dot using the utility model, and the heat evacuation capacity of luminescent layer can be enhanced.
Description
Technical field
The utility model is related to LED backlight field, more particularly to a kind of quantum dot LED component and the above-mentioned quantum of use
The backlight lamp bar and backlight module of point LED component.
Background technology
What the encapsulating structure of On-Chip type quantum dots LED was reported has air insulated, silica-gel lens isolation, silica gel packaging
The insulation packages forms such as isolation, but the promotion of reliability is not obvious.
In the encapsulating structure of existing On-Chip types quantum dot LED, although being intended to send out quantum dot by air or layer of silica gel
Photosphere and chip are kept apart, but the improvement of reliability is not obvious.Reason of both mainly having, when air or layer of silica gel
Heat-proof quality does not meet insulation requirement, second is that the heat transfer mode of LED is mainly heat transfer and thermal convection current, heat dissipation path is from device
Toward bottom metal substrate at the top of part.Since quantum dot light-light conversion efficiency is low, relative fluorescence powder, QD during light emitting from
Body can generate more heats.After adding separation layer, luminescent layer and frame bottom metal substrate are contactless, and heat dissipation path is hindered
Every the heat that QD luminescent layers generate can not be evacuated quickly, and heat is caused to gather.
As shown in Figure 1, documents 1 are the Chinese patents of Publication No. CN106653985A, it discloses a kind of multilayers
The quantum dot LED structure of encapsulation, the LED chip 2 including carrier 1 and on carrier 1.It is covered with packaging plastic successively on LED chip 2
Layer 4, fluorescent powder glue-line 5, quantum dot glue-line 6 and barrier water oxygen layer.It is by anti-vulcanizing agent, silicon rubber, silicones to encapsulate glue-line 4
One or more materials be made.The barrier that barrier water oxygen layer includes barrier water oxygen film 7 and is covered on barrier water oxygen film
Water oxygen glue-line 8.Fluorescent powder glue-line 5 is that fluorescent powder is scattered in transparent colloid and obtains.Quantum dot glue-line 6 is quantum dot microsphere point
Dissipate what is obtained in transparent colloid, the transparent colloid is silica gel, polymethyl methacrylate, makrolon or polystyrene
It is one or more.
Fluorescent powder and quantum dot are divided into two layers by documents 1, and fluorescent powder and quantum dot are kept apart, can be effectively reduced
Quantum dot and absorption of the fluorescent powder to each spontaneous emission light；One layer of encapsulation glue-line is filled between LED chip and fluorescent powder glue-line, it can
It is absorbed with reducing the exciting light scattered to the direction of LED chip by LED chip, then improves the luminous efficiency of LED.But it seals
Dress glue-line is completely covered by LED chip and carrier so that the bottom of fluorescent powder glue-line and carrier is contactless, leads to heat dissipation effect
It is bad.
Utility model content
The technical problem to be solved by the utility model is to provide a kind of quantum dot LED component, the quantum dot LED
The heat-sinking capability of device is good, highly reliable.
Technical problem to be solved in the utility model also resides in, and provides a kind of back of the body for including above-mentioned quantum dot LED component
Light lamp bar and backlight module, the good reliability of the quantum dot LED component, colour gamut are wide.
To reach above-mentioned technique effect, the utility model provides a kind of quantum dot LED component, including LED support, LED
Chip, light transmission thermal insulation layer and luminescent layer, the LED chip are set on LED support, and the light transmission thermal insulation layer is coated on LED chip
Outer surface, the top of the light transmission thermal insulation layer is equipped with luminescent layer, and the luminescent layer is contacted with LED support part.
As the improvement of said program, the contact area of the luminescent layer and LED support accounts for the gross area of LED support
The contact area of 5%-70%, the light transmission thermal insulation layer and LED support accounts for the 1%-20% of the gross area of LED support.
As the improvement of said program, the contact area of the luminescent layer and LED support accounts for the gross area of LED support
The contact area of 20%-60%, the light transmission thermal insulation layer and LED support accounts for the 1%-10% of the gross area of LED support.
As the improvement of said program, the light transmission thermal insulation layer is silicon oxynitride layer.
As the improvement of said program, the luminescent layer is quantum dot light emitting layer.
As the improvement of said program, the LED chip is blue chip.
As the improvement of said program, the top of the luminescent layer is equipped with transparent protective layer.
As the improvement of said program, the transparent protective layer is transparent silicon glue-line.
Correspondingly, a kind of backlight lamp bar is also disclosed in the utility model, including using at least one quantum dot LED devices
Part.
Correspondingly, a kind of backlight module is also disclosed in the utility model, including at least one backlight lamp bar.
Implement the utility model to have the advantages that：
The utility model includes LED support, LED chip, light transmission thermal insulation layer and luminescent layer, and light transmission thermal insulation layer is coated on LED
On the outer surface of chip, and luminescent layer is contacted with LED support part, and the area ratio that light transmission thermal insulation layer occupies LED support is smaller,
Luminescent layer still has larger proportion contact area with frame bottom.Therefore, which both can be with isolating chip and quantum dot
Luminescent layer can enhance the heat evacuation capacity of luminescent layer to reduce destruction of the chip temperature to quantum dot.
The light transmission thermal insulation layer is silicon oxynitride layer, can not only play good heat insulation, but also with good light transmission
Property.
The utility model is also equipped with transparent protective layer in the top of luminescent layer, enhances the air-tightness of device, prevents water oxygen pair
The corrosion of quantum dot light emitting layer further improves the reliability of device.
Description of the drawings
Fig. 1 is the schematic diagram of existing quantum dot LED structure；
Fig. 2 is a kind of structure diagram of quantum dot LED component of the utility model；
Fig. 3 is a kind of spectrogram of quantum dot LED component of the utility model；
Fig. 4 is a kind of gamut map of quantum dot LED component of the utility model.
Specific embodiment
To make the purpose of this utility model, technical solution and advantage clearer, the utility model will be made into one below
Step ground detailed description.
Quanta point material itself can generate larger heat during light emitting, if heat can not be evacuated quickly, lead
Pyrogenicity amount is gathered, and influences the reliability of LED component.
For this purpose, as shown in Fig. 2, the utility model provides a kind of quantum dot LED component, including LED support 1, LED chip
2nd, light transmission thermal insulation layer 3 and luminescent layer 4, the LED chip 2 are set on LED support 1, and the light transmission thermal insulation layer 3 is coated on LED core
The outer surface of piece 2, the top of the light transmission thermal insulation layer 3 are equipped with luminescent layer 4, and the luminescent layer 4 is contacted with 1 part of LED support.
Preferably, the contact area of the luminescent layer 4 and LED support 1 accounts for the 5%-70% of the gross area of LED support 1, institute
State light transmission thermal insulation layer 3 and LED support 1 contact area account for LED support 1 the gross area 1%-20%.
More preferably, the contact area of the luminescent layer 4 and LED support 1 accounts for the 20%-60% of the gross area of LED support 1,
The contact area of the light transmission thermal insulation layer 3 and LED support 1 accounts for the 1%-10% of the gross area of LED support 1.
The light transmission thermal insulation layer 3 is coated on the outer surface of LED chip 2, and the luminescent layer 4 connects with 1 part of LED support
It touches, the area ratio that light transmission thermal insulation layer 3 occupies LED support 1 is smaller, and luminescent layer 4 still has larger proportion to contact with 1 bottom of stent
Area.Therefore, the structure design both can with isolating chip and quantum dot light emitting layer to reduce destruction of the chip temperature to quantum dot,
The heat evacuation capacity of luminescent layer can be enhanced again.
Luminescent layer 4 has certain contact with the metal substrate of 1 bottom of LED support, can quickly conduct the heat of luminescent layer
It goes out, reduces influence of the heat accumulation to luminescent layer.
The light transmission thermal insulation layer 3 is silicon oxynitride layer.SiON is used as heat-barrier material, can both play good heat-insulated effect
Fruit, and with good translucency.
Silicon oxynitride SiON, it is seen that more than 98% light transmittance in light region, poor thermal conductivity, compactness is high, and Morse hardness is high
Corrosion-resistant up to 9H, high temperature resistant is anti-oxidant, being heating and curing is transformed by Perhydropolysilazane (PHPS, inorganic polymer).
Therefore, which can be effectively isolated high temperature chip and luminescent layer, weaken the high temperature generated during chip operation and generate shadow to quantum dot
It rings.In addition, high rigidity characteristic can also the thermal expansion of some relaxation luminescent layer to the tensile stress of chip.
The luminescent layer is quantum dot light emitting layer.Quantum dot (being abbreviated as QD) has continuous controllable, the luminous effect of launch wavelength
The advantages that rate height and half-wave width, suitable in high colour gamut backlight display field.
The LED chip is blue chip.Blue chip and red fluorescence powder, green emitting phosphor match, and generate white light,
Meets the needs of daily a variety of occasions are for LED illumination.
Further, the top of luminescent layer 4 is equipped with transparent protective layer 5.The transparent protective layer 5 is preferably transparent silicon glue-line,
The air-tightness of device can be enhanced, prevent erosion of the water oxygen to quantum dot light emitting layer.
Correspondingly, a kind of backlight lamp bar is also disclosed in the utility model, including using above-mentioned at least one quantum dot LED devices
Part.As backlight lamp bar one of which preferred embodiment, including above-mentioned at least one quantum dot LED component, optics
Lens and pcb board, the quantum dot LED component are mounted on the pcb board, and the optical lens is solidificated on the pcb board,
And above the quantum dot LED component.Wire connection terminal is provided on the further pcb board for connecting with external power supply
It connects.
Correspondingly, a kind of backlight module is also disclosed in the utility model, including above-mentioned at least one backlight lamp bar.As the back of the body
Optical mode group one of which preferred embodiment, it is described including above-mentioned at least one backlight lamp bar, diffuser plate and diaphragm
Diffuser plate is placed in above the backlight lamp bar, and the diaphragm is placed on the diffuser plate.Specifically, the diaphragm can be
At least one prismatic lens and at least one diffusion sheet.The backlight module can be applicable to straight-down negative TV backlights or direct-illumination type panel lamp etc.
In equipment.
As shown in figure 3, which show the spectrogram of quantum dot LED component, by spectrogram it is found that the quantum dot LED devices
Part has good luminescent properties, suitable for the equipment such as straight-down negative TV backlights or direct-illumination type panel lamp.
As shown in figure 4, which show the gamut map of quantum dot LED component, curve 1 is standard NTSC, and curve 2 is this practicality
Novel quantum dot LED component NTSC.As shown in Figure 4, the utility model quantum dot LED component is as the area of standard
100%, it was demonstrated that the colour gamut of the utility model quantum dot LED component is wide.
It is had the advantages that in conclusion implementing the utility model：
The utility model includes LED support, LED chip, light transmission thermal insulation layer and luminescent layer, and light transmission thermal insulation layer is coated on LED
On the outer surface of chip, and luminescent layer is contacted with LED support part, and the area ratio that light transmission thermal insulation layer occupies LED support is smaller,
Luminescent layer still has larger proportion contact area with frame bottom.Therefore, which both can be with isolating chip and quantum dot
Luminescent layer can enhance the heat evacuation capacity of luminescent layer to reduce destruction of the chip temperature to quantum dot.
The light transmission thermal insulation layer is silicon oxynitride layer, uses SiON as heat-barrier material, can both play good heat-insulated effect
Fruit, and with good translucency.
The utility model is also equipped with transparent protective layer in the top of luminescent layer, enhances the air-tightness of device, prevents water oxygen pair
The corrosion of quantum dot light emitting layer further improves the reliability of device.
The above is the preferred embodiment of the utility model, it is noted that for the ordinary skill of the art
For personnel, under the premise of the utility model principle is not departed from, several improvements and modifications can also be made, these are improved and profit
Decorations are also considered as the scope of protection of the utility model.
Claims (10)
1. a kind of quantum dot LED component, which is characterized in that including LED support, LED chip, light transmission thermal insulation layer and luminescent layer, institute
LED chip is stated on the LED support, the light transmission thermal insulation layer is coated on the outer surface of LED chip, the light transmission thermal insulation layer it is upper
Side is equipped with luminescent layer, and the luminescent layer is contacted with LED support part.
2. quantum dot LED component as described in claim 1, which is characterized in that the contact area of the luminescent layer and LED support
Account for the 5%-70% of the gross area of LED support；
The contact area of the light transmission thermal insulation layer and LED support accounts for the 1%-20% of the gross area of LED support.
3. quantum dot LED component as claimed in claim 2, which is characterized in that the contact area of the luminescent layer and LED support
Account for the 20%-60% of the gross area of LED support；
The contact area of the light transmission thermal insulation layer and LED support accounts for the 1%-10% of the gross area of LED support.
4. quantum dot LED component as described in claim 1, which is characterized in that the light transmission thermal insulation layer is silicon oxynitride layer.
5. quantum dot LED component as described in claim 1, which is characterized in that the luminescent layer is quantum dot light emitting layer.
6. quantum dot LED component as described in claim 1, which is characterized in that the LED chip is blue chip.
7. such as claim 1-6 any one of them quantum dot LED components, which is characterized in that the top of the luminescent layer is equipped with
Transparent protective layer.
8. quantum dot LED component as claimed in claim 7, which is characterized in that the transparent protective layer is transparent silicon glue-line.
9. a kind of backlight lamp bar, which is characterized in that including using at least one such as claim 1 to 8 any one of them quantum
Point LED component.
10. a kind of backlight module, which is characterized in that including the backlight lamp bar described at least one claim 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721667175.3U CN207529973U (en) | 2017-12-04 | 2017-12-04 | Quantum dot LED component, backlight lamp bar and backlight module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721667175.3U CN207529973U (en) | 2017-12-04 | 2017-12-04 | Quantum dot LED component, backlight lamp bar and backlight module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207529973U true CN207529973U (en) | 2018-06-22 |
Family
ID=62577864
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721667175.3U Active CN207529973U (en) | 2017-12-04 | 2017-12-04 | Quantum dot LED component, backlight lamp bar and backlight module |
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| Country | Link |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109254451A (en) * | 2018-10-19 | 2019-01-22 | 住华科技股份有限公司 | Backlight module, panel using the same and manufacturing method thereof |
| CN109494290A (en) * | 2018-10-19 | 2019-03-19 | 安徽芯瑞达科技股份有限公司 | A kind of high colour gamut quantum dot LED lamp bead and its packaging method |
| CN109945144A (en) * | 2019-04-17 | 2019-06-28 | 陕西科技大学 | A kind of heat absorption decompression thermal conductivity heat-insulating structure for liquid quantum dot LED light |
-
2017
- 2017-12-04 CN CN201721667175.3U patent/CN207529973U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109254451A (en) * | 2018-10-19 | 2019-01-22 | 住华科技股份有限公司 | Backlight module, panel using the same and manufacturing method thereof |
| CN109494290A (en) * | 2018-10-19 | 2019-03-19 | 安徽芯瑞达科技股份有限公司 | A kind of high colour gamut quantum dot LED lamp bead and its packaging method |
| CN109254451B (en) * | 2018-10-19 | 2022-11-22 | 住华科技股份有限公司 | Backlight module and application thereof Panel and manufacturing method thereof |
| CN109945144A (en) * | 2019-04-17 | 2019-06-28 | 陕西科技大学 | A kind of heat absorption decompression thermal conductivity heat-insulating structure for liquid quantum dot LED light |
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