CN105023986B - Led - Google Patents

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Publication number
CN105023986B
CN105023986B CN201410157754.8A CN201410157754A CN105023986B CN 105023986 B CN105023986 B CN 105023986B CN 201410157754 A CN201410157754 A CN 201410157754A CN 105023986 B CN105023986 B CN 105023986B
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Prior art keywords
led
led chip
transparency conducting
layer
transparent
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CN201410157754.8A
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CN105023986A (en
Inventor
梁秉文
张涛
金忠良
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Suzhou Institute of Nano Tech and Nano Bionics of CAS
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Suzhou Institute of Nano Tech and Nano Bionics of CAS
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Abstract

The invention discloses a kind of LED, including transparent base, at least one groove is distributed with the transparent base, a LED chip is provided with each groove, the LED chip includes transparent substrates and the epitaxial layer being formed in the transparent substrates, the epitaxial layer is provided with transparency conducting layer, and the transparency conducting layer is also at least extended on the transparent base.By the design of the present invention, it is possible to achieve 4 π solid angle entirely lightings of LED, light efficiency are high(More than general 2 π solids corner lamp improved efficiency ~ 20%), while the illuminating module of different voltages can be produced, low cost, high reliability, easily high-volume standardization making.

Description

LED
Technical field
The present invention relates to a kind of light emitting semiconductor device, more particularly to a kind of LED.
Background technology
The sixties in last century, first LED product was born in the U.S., and its appearance brings many light to the life of people Coloured silk, because LED has the advantages that long lifespan, low-power consumption, green, associated technology develops very fast.It is Through as " ubiquitous " and our life closely bound up photoelectric device and light source, such as the backlight of mobile phone, traffic signals Lamp, giant-screen full color display and landscape brightening lamp etc..
It is its price and light extraction efficiency and radiating to restrict the bottleneck that LED is further applied and developed at present, is used in theory The luminous efficiency of blue LED excited yellow fluorescent material synthesis white light is up to every watt of lumen more than 300, but present actual efficiency is also Probably it is half of theoretical value or so less than the 60% of theoretical value, one of major reason is that a part is sent out from active region The light gone out can not escape inside LED component.Wherein, the absorption to light of metal electrode and base material and block so that LED light The loss of effect is very big.
The content of the invention
It is an object of the invention to provide a kind of LED, solves in the prior art because metal electrode and base material Absorption and block and cause the low technical problem of LED component luminous efficiency.
To achieve the above object, the present invention provides following technical scheme:
A kind of LED, including transparent base, an at least groove, each groove is distributed with the transparent base It is interior to be provided with least one LED chip being mainly made up of transparent substrates and epitaxial layer, the electrode zone of the epitaxial layer of each LED chip On be covered with the transparency conducting layer as electrode, and the transparency conducting layer is also at least extended on the transparent base.
As more one of preferred embodiment, cover in the transparency conducting layer on the epitaxial layer of each LED chip also The electrode zone of the epitaxial layer of another LED chip is at least extended over, so that being distributed in a plurality of in the transparent base LED chip is electrically connected with each other.
Further, the epitaxial layer includes p type semiconductor layer and n type semiconductor layer, and the n type semiconductor layer has the One electrode contact surface, the p type semiconductor layer have second electrode contact surface, and the transparent base is included positioned at the first height First top surface and the second top surface positioned at the second height, the transparency conducting layer include the first transparency conducting layer, and described first is saturating Bright conductive layer is formed on the second electrode contact surface and horizontally extending on the second top surface.
Further, the transparency conducting layer also includes the second transparency conducting layer, and second transparency conducting layer is formed at It is on the first electrode contact surface and horizontally extending on the first top surface.
Further, the LED includes plural groove, one LED chip of distribution in each groove, and with extremely Second transparent conductive electrode of the first transparent conductive electrode that a few LED chip coordinates also with least another LED chip electrically connects, So that at least two LED chip is arranged in series.
Further, the LED includes plural groove, one LED chip of distribution in each groove, and with extremely First, second transparent conductive electrode that a few LED chip coordinates is also transparent with the first, second of at least another LED chip respectively Conductive electrode electrically connects, so that at least two LED chip is arranged in parallel.
Further, the first electrode contact surface is adjacent with first top surface and is generally aligned in the same plane, and described second Electrode contact surface is adjacent with second top surface and is generally aligned in the same plane.
Further, the material of the transparency conducting layer includes but is not limited to tin indium oxide, zinc oxide or based on nano-sized carbon The transparency conducting layer of material, such as carbon nano tube transparent conductive layer, graphene conductive layer etc..
Further, the material of the transparent base includes but is not limited to glass, sapphire, carborundum or other transparent gold The inorganic transparent material such as category and/or nonmetal oxide, organic transparent material or its combination.
Further, the LED also includes to wrap up the encapsulated layer of transparent base, and the encapsulated layer includes Fluorescent material.
Further, the LED also includes to wrap up the encapsulated layer of LED chip, and the encapsulated layer includes Fluorescent material.
Compared with prior art, advantages of the present invention includes:By using transparent base, and substituted with transparency conducting layer and passed The metal electrode of system, realize LED fully transparent luminous, be i.e. 4 π solid angle entirely lightings, lighted compared to 2 π Three-dimensional corner lamp, luminous efficiency can lift more than~20%.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing There is the required accompanying drawing used in technology description to be briefly described, it should be apparent that, drawings in the following description are only this Some embodiments described in invention, for those of ordinary skill in the art, on the premise of not paying creative work, Other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 show the structural representation of LED in first embodiment of the invention;
Fig. 2 show the structural representation of LED in second embodiment of the invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, detailed retouch is carried out to the technical scheme in the embodiment of the present invention State, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.Based on the present invention In embodiment, the every other implementation that those of ordinary skill in the art are obtained on the premise of creative work is not made Example, belongs to the scope of protection of the invention.
Join shown in Fig. 1, in first embodiment of the invention, LED includes transparent base 1, the material of transparent base 1 Preferably glass.Formed with multiple grooves 2 on the surface of transparent base 1, a LED chip 3 is respectively equipped with each groove 2, It is connected in series between LED chip 3.
LED chip 3 includes transparent substrates, the epitaxial layer and transparency conducting layer being formed in transparent substrates.Transparent substrates Material is preferably sapphire or carborundum.Epitaxial layer includes being sequentially formed in n type semiconductor layer and P-type semiconductor in transparent substrates Layer, by etching p type semiconductor layer until exposing n type semiconductor layer(Can be with partial etching n type semiconductor layer)To form first Electrode contact surface, the first electrode contact surface is defined positioned at the first height.The top surface of p type semiconductor layer contacts for second electrode Face, the second contact surface is defined positioned at the second height.Transparent base 1 is included positioned at the first top surface of the first height and high positioned at second Second top surface of degree, wherein, the first top surface is adjacent with first electrode contact surface, and the second top surface is adjacent with second electrode contact surface. Transparency conducting layer includes the first transparency conducting layer 41 and the second transparency conducting layer 42, and the second transparency conducting layer 42 covers or part is covered It is placed on first electrode contact surface, and is drawn from the first top surface is horizontal;First transparency conducting layer 41 covers or part is covered in the On two electrode contact surfaces, and drawn from the second top surface is horizontal.The material of transparent conductive electrode is preferably tin indium oxide or zinc oxide Or CNT or graphene etc..
The LED can also be enclosed with encapsulated layer, and encapsulated layer can be made up of organic silica gel or epoxy resin etc., wherein Can Uniform Doped, coated with fluorescent material 5 etc., to realize the wavelength convert of LED chip transmitting light, and by such a packing forms, The light that device can also launched has more preferably uniformity.And the type of the fluorescent material can be selected according to the demand of practical application Take, its acquiring way can also have it is a variety of, for example, commercially available approach can be derived from.Postscript, transparent material can be also filled in aforementioned grooves Material, and LED chip is wrapped up with it, while fluorescent material also can be adulterated or wrapped up in these transparent materials.
Further, as one of preferable case study on implementation, the first electrically conducting transparent that will can coordinate with an at least LED chip Electrode electrically connects with the second transparent conductive electrode of at least another LED chip, so that at least two LED chip series connection is set Put.
And/or also can by first, second transparent conductive electrode coordinated with an at least LED chip respectively with it is at least another The first, second transparent conductive electrode electrical connection of LED chip, so that at least two LED chip is arranged in parallel.
By previous designs, serial or parallel connection or connection in series-parallel group can be formed between the LED chip in LED The loop of conjunction, without separately setting transfer base substrate etc., and ensure that LED has normal working performance, particularly exist In the case of connection in series-parallel is combined, existing LED fault rate caused by being connected with metal wire can be reduced.Moreover, After all LED chips in by a LED are incorporated in a current loop, it is only necessary to set and be somebody's turn to do in the devices The general supply access interface that current loop coordinates, and be connected with the general supply access interface with power supply, so that device works, such as This can simplify the structure of LED, further reduce its production cost, simplify its production technology, and making it, easily high-volume is marked Standardization makes.Foregoing general supply port can use all kinds of forms known in the art, such as grafting port.
Postscript, by easily adjusting the quantity of LED chip and/or its combination in LED(Connection in series-parallel knot Structure), can also produce the illuminating modules of different voltages.
In addition, will be readily apparent, LED can also be alternately provided with only a LED chip, and LED chip can also Using upside-down mounting mode, the top surface of transparent base 1(Groove outer portion)In can also being generally aligned in the same plane.
Refer to again shown in Fig. 2, in second embodiment of the invention, LED includes transparent base 11, transparent base 11 material is preferably glass.Fluted 15 are formed on the surface of transparent base 11, a LED chip 12 is provided with groove 15, Chip perimeter can be filled with transparency material.
LED chip 12, which includes transparent substrates and the epitaxial layer being formed in transparent substrates, epitaxial layer, includes P-type semiconductor Layer and n type semiconductor layer, the n type semiconductor layer have first electrode contact surface, and there is p type semiconductor layer second electrode to connect Contacting surface, transparency conducting layer 13 are formed on second electrode contact surface and horizontally extending on transparent base 11.Transparent base The transparency conducting layer 13 of the top of material 11 is provided with metal pad 16, and N-type electrode 14 is provided with first electrode contact surface.
Aforementioned second embodiment is only a kind of present invention mode in the cards, it is clear that from luminous efficiency etc. Speech, it is inferior to foregoing first embodiment, but is also better than existing LED component assembling form.
Sum it up, the design by the present invention, it is possible to achieve 4 π solid angle entirely lightings of LED, light efficiency It is high(More than general 2 π light-emitting 3 Ds corner lamp improved efficiency ~ 20%), while the illuminating module of different voltages can be produced, it is low Cost, easily high-volume standardization make.
It should be noted that herein, such as first and second or the like relational terms are used merely to a reality Body or operation make a distinction with another entity or operation, and not necessarily require or imply and deposited between these entities or operation In any this actual relation or order.Moreover, term " comprising ", "comprising" or its any other variant are intended to Nonexcludability includes, so that process, method, article or equipment including a series of elements not only will including those Element, but also the other element including being not expressly set out, or it is this process, method, article or equipment also to include Intrinsic key element.In the absence of more restrictions, the key element limited by sentence "including a ...", it is not excluded that Other identical element also be present in process, method, article or equipment including the key element.
It should be appreciated that described above is only the embodiment of the present invention, it is noted that for the general of the art For logical technical staff, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improve and Retouching also should be regarded as protection scope of the present invention.

Claims (9)

  1. A kind of 1. LED, it is characterised in that including transparent base, an at least groove is distributed with the transparent base, At least one LED chip being mainly made up of transparent substrates and epitaxial layer is provided with each groove, the epitaxial layer of each LED chip The transparency conducting layer as electrode is covered with electrode zone, and the transparency conducting layer also at least extends to the transparent base On material, the epitaxial layer includes p type semiconductor layer and n type semiconductor layer, and the n type semiconductor layer has first electrode contact Face, the p type semiconductor layer have a second electrode contact surface, the transparent base include positioned at the first height the first top surface and Positioned at the second top surface of the second height, the transparency conducting layer includes the first transparency conducting layer and the second transparency conducting layer, described First transparency conducting layer is formed on the second electrode contact surface and horizontally extending on the second top surface, and described second Transparency conducting layer is formed on the first electrode contact surface and horizontally extending on the first top surface.
  2. 2. LED according to claim 1, it is characterised in that:Cover on the epitaxial layer of each LED chip Transparency conducting layer also at least extends over the electrode zone of the epitaxial layer of another LED chip, so that being distributed in the transparent base A plurality of LED chips in material are electrically connected with each other.
  3. 3. LED according to claim 1, it is characterised in that:The LED includes plural groove, One LED chip of distribution in each groove, and the first transparent conductive electrode coordinated with an at least LED chip also with it is at least another The second transparent conductive electrode electrical connection of LED chip, so that at least two LED chip is arranged in series.
  4. 4. LED according to claim 1, it is characterised in that:The LED includes plural groove, One LED chip of distribution in each groove, and first, second transparent conductive electrode coordinated with an at least LED chip is also distinguished Electrically connected with first, second transparent conductive electrode of at least another LED chip, so that at least two LED chips parallel connection is set Put.
  5. 5. according to the LED any one of claim 1-4, it is characterised in that:The first electrode contact surface Adjacent with first top surface and be generally aligned in the same plane, the second electrode contact surface is adjacent with second top surface and positioned at same One plane.
  6. 6. according to the LED any one of claim 1-4, it is characterised in that:The material of the transparency conducting layer Matter includes tin indium oxide (ITO), zinc oxide or the transparency conducting layer based on nano-carbon material, and the nano-carbon material is received including carbon Mitron or graphene.
  7. 7. according to the LED any one of claim 1-4, it is characterised in that:The material of the transparent base Including organic or inorganic transparent material, the inorganic transparent material includes glass, sapphire, carborundum or transparent oxide.
  8. 8. according to the LED any one of claim 1-4, it is characterised in that:The LED is also wrapped Include to wrap up the encapsulated layer of transparent base, the encapsulated layer includes fluorescent material.
  9. 9. according to the LED any one of claim 1-4, it is characterised in that:The LED is also wrapped Include to wrap up the encapsulated layer of LED chip, the encapsulated layer includes fluorescent material.
CN201410157754.8A 2014-04-18 2014-04-18 Led Active CN105023986B (en)

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105552087B (en) * 2015-12-30 2018-04-13 广东省半导体产业技术研究院 A kind of LED miniature arrays transparent display
KR101847100B1 (en) * 2017-01-02 2018-04-09 박승환 Method for the production of a transparent light emitting apparatus using an imprinting technique and manufacturing the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101459190A (en) * 2005-05-20 2009-06-17 财团法人工业技术研究院 AC illuminating device and manufacturing method thereof
CN103489995A (en) * 2013-10-16 2014-01-01 福州圆点光电技术有限公司 Flexible LED (light-emitting diode) light source filament
CN203812902U (en) * 2014-04-18 2014-09-03 中国科学院苏州纳米技术与纳米仿生研究所 LED light emitting device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101459190A (en) * 2005-05-20 2009-06-17 财团法人工业技术研究院 AC illuminating device and manufacturing method thereof
CN103489995A (en) * 2013-10-16 2014-01-01 福州圆点光电技术有限公司 Flexible LED (light-emitting diode) light source filament
CN203812902U (en) * 2014-04-18 2014-09-03 中国科学院苏州纳米技术与纳米仿生研究所 LED light emitting device

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