CN208873757U - A kind of quantum dot LED encapsulation structure - Google Patents
A kind of quantum dot LED encapsulation structure Download PDFInfo
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- CN208873757U CN208873757U CN201821844877.9U CN201821844877U CN208873757U CN 208873757 U CN208873757 U CN 208873757U CN 201821844877 U CN201821844877 U CN 201821844877U CN 208873757 U CN208873757 U CN 208873757U
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Abstract
The utility model discloses a kind of quantum dot LED encapsulation structures, including bracket and LED chip, the surface of bracket is provided with bowl, concave step is provided at the top of bowl, LED chip is arranged among the bottom surface of bowl, and quantum glass assembly is provided in concave step, and quantum glass assembly both ends are encapsulated in concave step by silica gel-epoxy resin sealant, quantum glass assembly includes upper glassy layer and lower ply of glass, is provided with quantum dot layer between upper glassy layer and lower ply of glass；After being vacuumized in the cavity of lower ply of glass and bowl composition, vacuum bakeout is carried out, the good airtightness of quantum dot layer and chip interior is realized and blocks water oxygen.
Description
Technical field
The utility model relates to LED encapsulation field, specially a kind of quantum dot LED encapsulation structure.
Background technique
With the raising of national economy level, people are to the life of high-quality also increasingly demand.Quanta point material conduct
A kind of novel luminescent material is applied to the equipment such as illumination or display, because its excite spectrum width, monochromaticjty be good, glow peak wavelength can
It adjusts, high conversion efficiency, can be realized effective promotion to photochromic stabilization (control accurate of spectrum) and backlight product colour gamut, be used in combination
To make up or substitute deficiency of the rare earth doping fluorescent powder in energy level distribution and luminous efficiency, more before economic advantages and application
Scape.
However, existing quanta point material water oxygen stability is poor, it is conventional to encapsulate the encapsulation side that the lower service life is short, failure is fast, common
Formula can not achieve the effective protection to material, and existing quantum dot application only rests on the diaphragm stage, and the dosage of material is big, device
Suitability is poor, and yield and yield are lower, and traditional LED encapsulation method has the following deficiencies:
(1) quantum dot is affected with material property of the water oxygen after chip package to quantum dot, and quantum dot is caused to encapsulate
The light efficiency of device is poor, and LED chip light source, when carrying out light projection, the light reflection at edge and overlapping phenomenon are more tight
Weight, so that the light projection that LED chip generates is uneven；
(2) encapsulating structure of existing quantum dot encapsulation is difficult to apply on high power device.
Utility model content
In order to overcome the shortcomings of prior art, the utility model provides a kind of quantum dot LED encapsulation structure, can be effective
Solve the problems, such as background technique propose.
The technical scheme adopted by the utility model to solve the technical problem is as follows:
A kind of quantum dot LED encapsulation structure, including bracket and LED chip, the surface of the bracket are provided with bowl, institute
It states and is provided with concave step at the top of bowl, the LED chip is arranged among the bottom surface of bowl, setting in the concave step
There is quantum glass assembly, quantum glass assembly both ends are encapsulated in concave step by silica gel-epoxy resin sealant, institute
Stating quantum glass assembly includes upper glassy layer and lower ply of glass, is provided with quantum dot between the upper glassy layer and lower ply of glass
Layer.
Further, the junction of the concave step and bowl is provided with step edge, under the quantum glass assembly
The both ends of glassy layer connect in step edge, and the last single order platform surface of the step edge is provided with half slot.
Further, the silica gel-epoxy resin sealant includes independent layer of silica gel and epoxy resin layer.
Further, the thickness of the quantum dot layer is between 100~500 μm, and the quantum dot layer can also with it is glimmering
Light powder forms combination layer, and the upper glassy layer and lower ply of glass are in the same size, and the thickness of upper glassy layer and lower ply of glass about 50~
300μm。
Further, the both ends of the upper glassy layer and lower ply of glass form opposite V-shaped chamfering, and the V-shaped
The top of chamfering is on the extended line at the both ends of the longitudinal section of bowl.
Compared with prior art, the utility model has the beneficial effects that
This structure reduces the dosage of quanta point material on the basis of guaranteeing light homogeneity out；The structure at the same time
Isolation water oxygen sealing is realized, to reduce the failure of quantum dot and chip, improves the stability of device；In addition, the structure mentions
The high utilization rate to chip light emitting, improves light efficiency, bears power capability, device suitability and service life, simple process,
Less investment, at low cost, yield is high, economizes on resources more environmentally friendly.
Detailed description of the invention
Fig. 1 is the overall structure diagram of the utility model；
Fig. 2 is that the direct layer of silica gel of the utility model encapsulates quantum glass assembly structural schematic diagram；
Fig. 3 encapsulates quantum glass assembly structural representation by layer of silica gel and epoxy resin layer for the utility model respectively
Figure；
Fig. 4 is that the end edge of the quantum glass assembly of the utility model is right angle package structure diagram；
Fig. 5 is the step edge enlarged structure schematic diagram of the utility model.
Figure label:
1- bracket；2-LED chip；3- bowl；4- concave step；5- quantum glass assembly；6- silica gel-epoxy resin is close
Sealing；7- step edge；8- half slot；
The upper glassy layer of 501-；502- lower ply of glass；503- quantum dot layer；504-V font chamfering；
601- layer of silica gel；602- epoxy resin layer.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work
Every other embodiment obtained, fall within the protection scope of the utility model.
Embodiment 1:
As shown in Figure 1, the utility model provides a kind of quantum dot LED encapsulation structure, including bracket 1 and LED chip
2, the surface of bracket 1 is provided with bowl 3, and the top of bowl 3 is provided with concave step 4, and the bottom of bowl 3 is arranged in LED chip 2
Among face, quantum glass assembly 5 is provided in concave step 4,5 both ends of quantum glass assembly pass through silica gel-epoxy resin sealing
Layer 6 is encapsulated in concave step 4, and quantum glass assembly 5 includes upper glassy layer 501 and lower ply of glass 502, upper 501 He of glassy layer
Quantum dot layer 503 is provided between lower ply of glass 502.
It further illustrates, the junction of concave step 4 and bowl 3 is provided with step edge 7, the lower glass of quantum glass assembly 5
The both ends of glass layer 502 connect in step edge 7, and the last single order platform surface of step edge 7 is provided with half slot 8.
The silica gel of the utility model-epoxy resin sealant 6 includes independent layer of silica gel 601 and epoxy resin layer 602.
Wherein, the thickness of quantum dot layer 503 is between 100~500 μm, and quantum dot layer 6 can also be formed with fluorescent powder
Combination layer, upper glassy layer 501 and lower ply of glass 502 are in the same size, and the thickness about 50 of upper glassy layer 501 and lower ply of glass 502~
300μm。
The both ends of upper glassy layer 501 and lower ply of glass 502 form opposite V-shaped chamfering 504, and V-shaped chamfering 504
Top is on the extended line at the both ends of the longitudinal section of bowl 3；
The utility model provides three kinds of LED encapsulation structures:
A) as shown in Fig. 2, being arranged quantum glass assembly 5 in concave step 4, while quantum dot layer 503, lower glass
Layer is identical with the area of upper glassy layer, and the both ends of quantum glass assembly 5 and lower ply of glass 502 and 7 contact position of step edge pass through
Layer of silica gel 601 directly encapsulates；
B) as shown in Fig. 1 or Fig. 3, quantum glass assembly 5 is arranged in concave step 4, while 503 area of quantum dot layer
It is slightly less than glassy layer 501 and lower ply of glass 502, the both ends of quantum dot layer 503 pass through epoxy resin layer 602 and upper glassy layer
501, lower ply of glass 502 is packaged together, and lower ply of glass 502 is packaged with 7 contact surface of step edge by layer of silica gel 601, together
When the opposite end of glassy layer 502 and lower ply of glass 501 formed V-shaped chamfering 504；
C) as shown in figure 4, setting 5 lower surface of quantum glass assembly is identical with the upper surface of bracket 1, i.e. quantum glass assembly
5 lower ply of glass 502 keeps consistent with the both ends of bracket 1, and the both ends of quantum dot layer 503 pass through epoxy resin layer 602 and upper glass
Glass layer, lower ply of glass are packaged together, and lower ply of glass 502 is packaged with 7 contact surface of step edge by layer of silica gel 601.
The utility model falls upper glassy layer 501 and lower ply of glass 502 in the LED encapsulation process under b) structure
Angle, so that the throw light of LED chip 2 can extend, to avoid when entering quantum glass assembly 5 along the direction of chamfering
The generation of corner's veiling glare, so that light projection is softer, the edge projection light of LED is more uniform；
Meanwhile step edge 7 is set in the junction of concave step 4 and bowl 3, when carrying out the coating of layer of silica gel 601,
The silica gel of lower ply of glass 502 is overflowed, is in nature fluidised form in step edge 7 under the effect of gravity, the silica gel of spilling will enter semicircle
In slot 8, and the setting of half slot 8, so that extra layer of silica gel 601 is coated uniformly on the surface of step edge 7, to prevent from overflowing
Layer of silica gel 601 generate diffusing reflection and refraction.
Embodiment 2:
A kind of manufacturing method of quantum dot LED encapsulation structure, characterized by the following steps:
Step 1: being provided with the bracket of concave step in preparation bowl, and the packaging LED chips in bowl；
Step 2: being encapsulated under the quantum glass assembly being arranged in concave step by silica gel-epoxy resin sealed end
Glassy layer, and after lower ply of glass surface coats quantum dot layer, it is compacted by upper glassy layer, then encapsulate glassy layer；
Step 3: vacuum bakeout is carried out after vacuumizing in the cavity of lower ply of glass and bowl composition.
In step 1, the bracket that concave step is provided in bowl, the size and quantum glass group of concave step are prepared
The size of part is identical, when the size of quantum glass assembly is identical with the upper surface area of bracket, in step 2, to upper glass
Independent encapsulation is carried out respectively between quantum dot layer and lower ply of glass and bracket between layer and lower ply of glass.
When the size of quantum glass assembly is identical with the upper surface area of bracket, the both ends of upper glassy layer and lower ply of glass
For right angle corner.
It is preferable to be coated heatproof, good airproof performance and light transmission in step 2 by the structure of counter structure a) for bracket left and right ends
Layer of silica gel, then the lower ply of glass of suitable dimension is put into the concave step part of bracket, the quantum dot layer of specific wavelength is equal
Even is coated in above lower ply of glass, will be covered above its quantum dot with the upper glassy layer of another same specification, the amount of making
Son point layer is connect well with upper glassy layer and lower ply of glass；
Bracket both ends are coated epoxy resin or heatproof, good airproof performance and thoroughly in step 2 by the structure of counter structure b)
The preferable layer of silica gel of light, then the lower ply of glass of suitable dimension is put into the concave step part of bracket, then by lower ply of glass or so
Both ends coating epoxy resin add QD or other can with light transmission have high leakproofness, heatproof, transparent silica gel, by specific wavelength
Quantum dot layer is uniformly coated in above lower ply of glass, by above its quantum dot layer with the upper glassy layer of another same specification into
Row covering, connect quantum dot layer with upper lower ply of glass and well；
Bracket left and right ends are coated epoxy resin or other can be with light transmissions by the structure of counter structure b) in step 2
There is high leakproofness, heatproof, transparent layer of silica gel, then the lower ply of glass of suitable dimension is put on bracket, in lower ply of glass
Both ends coating has heatproof, sealing, the preferable silica gel of light transmission, then the quantum dot of specific wavelength is uniformly coated in lower ply of glass
On, will be covered above its quantum dot with the upper glassy layer of other same specification, make both ends layer of silica gel by upper lower ply of glass and
It is attached.
It is arranged 80~200 DEG C of temperature according to the specific ingredient of glue material, toasts about 2~5 hours, and dry under vacuum conditions
It is roasting, solidify silica gel, finally obtains the quantum dot packaging with preferably isolation water oxygen ability；The glassy layer of the device, thoroughly
Bright silica gel has good airtightness, has preferably obstructed the water oxygen etc. in air, carries out to internal quantum dot and chip
Good enclosed package, to improve the reliability of device.
It is obvious to a person skilled in the art that the present invention is not limited to the details of the above exemplary embodiments, and
And without departing substantially from the spirit or essential attributes of the utility model, it can realize that this is practical new in other specific forms
Type.Therefore, in all respects, the present embodiments are to be considered as illustrative and not restrictive, this is practical new
The range of type is indicated by the appended claims rather than the foregoing description, it is intended that containing for the equivalent requirements of the claims will be fallen in
All changes in justice and range are embraced therein.It should not treat any reference in the claims as limiting
Related claim.
Claims (5)
1. a kind of quantum dot LED encapsulation structure, including bracket (1) and LED chip (2), it is characterised in that: the bracket (1)
Surface be provided with bowl (3), be provided with concave step (4) at the top of the bowl (3), the LED chip (2) is arranged in bowl
Among the bottom surface of cup (3), it is provided with quantum glass assembly (5) in the concave step (4), the quantum glass assembly (5) two
End is encapsulated in concave step (4) by silica gel-epoxy resin sealant (6), and the quantum glass assembly (5) includes upper glass
Layer (501) and lower ply of glass (502), are provided with quantum dot layer between the upper glassy layer (501) and lower ply of glass (502)
(503)。
2. a kind of quantum dot LED encapsulation structure according to claim 1, it is characterised in that: the concave step (4) and bowl
The junction of cup (3) is provided with step edge (7), and the both ends of the lower ply of glass (502) of the quantum glass assembly (5) are connected in rank
On terraced side (7), the last single order platform surface of the step edge (7) is provided with half slot (8).
3. a kind of quantum dot LED encapsulation structure according to claim 1, it is characterised in that: the silica gel-epoxy resin is close
Sealing (6) includes independent layer of silica gel (601) and epoxy resin layer (602).
4. a kind of quantum dot LED encapsulation structure according to claim 1, it is characterised in that: the quantum dot layer (503)
Thickness is between 100~500 μm, and the quantum dot layer (503) can also form combination layer, the upper glassy layer with fluorescent powder
(501) and lower ply of glass (502) is in the same size, about 50~300 μm of the thickness of upper glassy layer (501) and lower ply of glass (502).
5. a kind of quantum dot LED encapsulation structure according to claim 1, it is characterised in that: the upper glassy layer (501) and
The both ends of lower ply of glass (502) form opposite V-shaped chamfering (504), and the top of the V-shaped chamfering (504) is in bowl
(3) on the extended line at the both ends of longitudinal section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821844877.9U CN208873757U (en) | 2018-11-09 | 2018-11-09 | A kind of quantum dot LED encapsulation structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821844877.9U CN208873757U (en) | 2018-11-09 | 2018-11-09 | A kind of quantum dot LED encapsulation structure |
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| Publication Number | Publication Date |
|---|---|
| CN208873757U true CN208873757U (en) | 2019-05-17 |
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ID=66471292
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821844877.9U Active CN208873757U (en) | 2018-11-09 | 2018-11-09 | A kind of quantum dot LED encapsulation structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109301053A (en) * | 2018-11-09 | 2019-02-01 | 易美芯光（北京）科技有限公司 | A kind of quantum dot LED encapsulation structure and its manufacturing method |
| CN112510139A (en) * | 2020-12-22 | 2021-03-16 | 安徽芯瑞达科技股份有限公司 | Quantum dot lamp bead and preparation method thereof |
-
2018
- 2018-11-09 CN CN201821844877.9U patent/CN208873757U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109301053A (en) * | 2018-11-09 | 2019-02-01 | 易美芯光（北京）科技有限公司 | A kind of quantum dot LED encapsulation structure and its manufacturing method |
| CN112510139A (en) * | 2020-12-22 | 2021-03-16 | 安徽芯瑞达科技股份有限公司 | Quantum dot lamp bead and preparation method thereof |
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