CN209344122U - A kind of quantum dot LED packaging - Google Patents

A kind of quantum dot LED packaging Download PDF

Info

Publication number
CN209344122U
CN209344122U CN201821876178.2U CN201821876178U CN209344122U CN 209344122 U CN209344122 U CN 209344122U CN 201821876178 U CN201821876178 U CN 201821876178U CN 209344122 U CN209344122 U CN 209344122U
Authority
CN
China
Prior art keywords
quantum dot
layer
led packaging
dot led
glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201821876178.2U
Other languages
Chinese (zh)
Inventor
申崇渝
张冰
李德建
雷利宁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shineon Beijing Technology Co Ltd
Original Assignee
Shineon Beijing Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shineon Beijing Technology Co Ltd filed Critical Shineon Beijing Technology Co Ltd
Priority to CN201821876178.2U priority Critical patent/CN209344122U/en
Application granted granted Critical
Publication of CN209344122U publication Critical patent/CN209344122U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Led Device Packages (AREA)

Abstract

The utility model discloses a kind of quantum dot LED packagings, the main mixture including quanta point material or quantum dot and fluorescent powder is between layer glass, or at least upper layer glass protection, the epoxy resin or other protection materials of edge coating between glass, the flip LED chips of glassy layer lower surface bonds, and the white glue coated around film layer and flip LED chips, quanta point material is sealed in by upper layer and lower layer glass, in the airtight cavity that epoxy resin or other protection materials are constituted, after being adhered to the upper surface of flip LED chips below glass, white glue is coated in total surrounding.The utility model is on the basis of guaranteeing light homogeneity out, reduce the dosage of quanta point material, isolation water oxygen sealing is realized simultaneously, to reduce the failure of material, the stability for improving device, in addition, improving the utilization rate to chip light emitting, it improves light efficiency, bear power capability, device suitability and service life, reduce costs.

Description

A kind of quantum dot LED packaging
Technical field
The present invention relates to technical field of semiconductor illumination, in particular to a kind of quantum dot LED packaging and manufacturing method.
Background technique
With the raising of economic level, the pursuit that people live to high-quality is also more more and more urgent, light source, display effect Promotion will make one to feel more comfortable, satisfied, and quanta point material is as a kind of novel luminescent material, laser spectral width, monochrome Property it is good, shine wind Wavelength tunable, high conversion efficiency, can be realized effectively mentioning to the control accurate of spectrum and backlight product colour gamut It rises, economic advantages and application prospect is had more compared with current fluorescent powder scheme.
However, existing quanta point material water oxygen stability is poor, it is conventional to encapsulate the encapsulation side that the lower service life is short, failure is fast, common Formula can not achieve the effective protection to material, and existing quantum dot application only rests on the diaphragm stage, and the dosage of material is big, device Suitability is poor, and yield and yield are lower.
Utility model content
It is existing insufficient in practice to solve the prior art that the utility model provides a kind of quantum dot LED packaging, Quanta point material is sealed in the airtight cavity being made of upper layer and lower layer glass, epoxy resin or other protection materials, glass After being adhered to flip LED chips upper surface below, white glue is coated in total surrounding, this structure is guaranteeing light homogeneity out On the basis of, reduce the dosage of quanta point material;The structure realizes isolation water oxygen sealing at the same time, to reduce material Failure, improves the stability of device.
In order to achieve the above purpose, the utility model is achieved through the following technical solutions:
A kind of quantum dot LED packaging, quantum dot LED packaging include: upper surface glassy layer 1, quantum dot layer 2, LED chip 6 and encapsulating material 7, quantum dot layer 2 is located between upper surface glassy layer 1 and the LED chip 6 of upside-down mounting, in upper surface Encapsulating material 7 is coated with around glassy layer 1, quantum dot layer 2 and LED chip 6.
As further program of the utility model, quantum dot LED packaging further include: lower surface glassy layer 3, institute Lower surface glassy layer 3 is stated to be located between quantum dot layer 2 and the LED chip 6 of upside-down mounting.
As further program of the utility model, quantum dot LED packaging further include: glass surface treatment layer 4, The glass surface treatment layer 4 is coated in the surface of lower surface glassy layer 3, be located at quantum dot layer 2 and lower surface glassy layer 3 it Between.
As further program of the utility model, the glass surface treatment layer is UV glue thin layer.
As further program of the utility model, quantum dot LED packaging further include: protection materials 5, the guarantor Protective material 5 is coated in around quantum dot layer 2.
As further program of the utility model, the protection materials include epoxy resin.
As further program of the utility model, quantum dot layer 2 with a thickness of 10~300 microns.
As further program of the utility model, upper surface glassy layer 1 with a thickness of 50~300 microns.
As further program of the utility model, lower surface glassy layer 3 with a thickness of 50~300 microns.
As further program of the utility model, the encapsulating material includes white glue.
Compared with prior art, the utility model at least has the advantages that
The utility model discloses a kind of quantum dot LED packaging, mainly include quanta point material or quantum dot with it is glimmering The mixture of light powder is between layer glass, or at least upper layer glass protection, the edge coating between glass Epoxy resin or other protection materials, flip LED chips and film layer and the flip LED chips week of glassy layer lower surface bonds The white glue for enclosing coating, quanta point material is sealed in be made of upper layer and lower layer glass, epoxy resin or other protection materials it is close After being adhered to flip LED chips upper surface in closed chamber body, below glass, white glue is coated in total surrounding, this structure is being protected On the basis of demonstrate,proving out light homogeneity, reducing the dosage of quanta point material, the structure realizes isolation water oxygen sealing at the same time, To reduce the failure of material, the stability of device is improved, in addition, improving this arrangement enhances the utilization rate to chip light emitting Light efficiency bears power capability, device suitability and service life, reduces costs.
Detailed description of the invention
By reading the detailed description done with reference to the following drawings to non-limiting embodiment, other of the utility model are special Advantage of seeking peace will be more obvious:
Fig. 1 is a kind of structural schematic diagram of quantum dot LED packaging of utility model;
Fig. 2 is the structural schematic diagram of utility model another kind quantum dot LED packaging;
Fig. 3 is the structural schematic diagram of another quantum dot of utility model LED packaging;
In figure: the upper surface 1- glassy layer, 2- quantum dot layer, the lower surface 3- glassy layer, 4- glass surface treatment layer, 5- protection Material, 6- flip LED chips, 7- encapsulating material.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work Every other embodiment obtained, fall within the protection scope of the utility model.
As shown in Figure 1, the utility model embodiment provides a kind of quantum dot LED packaging, quantum dot LED encapsulation Device includes: upper surface glassy layer 1, quantum dot layer 2, LED chip 6 and encapsulating material 7, and quantum dot layer 2 is located at upper surface glass Between layer 1 and the LED chip 6 of upside-down mounting, package material is coated with around upper surface glassy layer 1, quantum dot layer 2 and LED chip 6 Material 7.
As shown in Fig. 2, quantum dot LED packaging is also on the basis of quantum dot LED packaging shown in Fig. 1 It include: protection materials 5, the protection materials 5 are coated in around quantum dot layer 2.
As shown in figure 3, quantum dot LED packaging further include: lower surface glassy layer 3, the lower surface glassy layer 3 Between quantum dot layer 2 and the LED chip of upside-down mounting 6.
In this embodiment, quantum dot LED packaging further include: glass surface treatment layer 4 and protection materials 5, institute The surface that glass surface treatment layer 4 is coated in lower surface glassy layer 3 is stated, between quantum dot layer 2 and lower surface glassy layer 3; The protection materials 5 are coated in around quantum dot layer 2.
In an embodiment of the invention, glass surface treatment layer can be UV glue thin layer.Protection materials include asphalt mixtures modified by epoxy resin Rouge.Encapsulating material includes white glue.Quantum dot layer 2 with a thickness of 10~300 microns.Upper surface glassy layer 1 with a thickness of 50~300 Micron.Lower surface glassy layer 3 with a thickness of 50~300 microns.
The processing method that the quantum dot LED packaging of different structure is provided below.
Quantum dot LED packaging as shown in Figure 1, uniformly coats after the quantum dot of specific wavelength is mixed UV glue in right amount The lower surface of glassy layer in upper surface, ultraviolet light irradiation make quantum dot mix adhesive curing;Bonding silicon is coated on flip LED chips surface The upper surface glassy layer that glue and use die bond technique are coated with quantum dot layer is be bonded with its;The surrounding coating of the above device is appropriate White glue, oven or thermal station baking, are arranged 80~200 DEG C of temperature according to the specific ingredient of glue material, bake about 2~5 hours, make silica gel And latex solidified, finally obtain the quantum dot packaging with preferably isolation water oxygen ability.
Quantum dot LED packaging as shown in Figure 2, will be on the lower surface surrounding point of the upper surface glassy layer of suitable dimension Epoxy resin, and baking makes its solidification;Upper surface glass is coated uniformly on after the quantum dot of specific wavelength is mixed UV glue in right amount Layer has the one side of epoxy resin, and the interior surrounded in epoxy resin, and ultraviolet light irradiation makes quantum dot mix adhesive curing;It is measuring The lower surface coating bonding silica gel of son point layer is simultaneously Nian Jie with flip LED chips;Appropriate white glue is coated in the surrounding of the above device, is baked Case or thermal station baking, are arranged 80~200 DEG C of temperature according to the specific ingredient of glue material, bake about 2~5 hours, make silica gel and white glue Solidification finally obtains the quantum dot packaging with preferably isolation water oxygen ability.
The upper surface of the lower surface glassy layer of suitable dimension is coated UV glue by quantum dot LED packaging as shown in Figure 3 The quantum dot of specific wavelength is coated uniformly on UV glue surface by thin layer in right amount, and ultraviolet light irradiates appropriate time, makes UV adhesive curing; The epoxy resin on the upper surface surrounding point of lower surface glassy layer, the thickness of epoxy resin are thicker than the thickness of quantum dot layer;It is measuring The upper surface of son point layer is covered with the upper surface glassy layer of another same size, connect its surrounding with epoxy resin, Proper temperature heating, makes the epoxy resin cure of surrounding, upper surface glassy layer is connected with lower surface glassy layer;In lower surface glass The lower surface of glass layer coats silica gel, is stained with flip LED chips;Appropriate white glue, oven or heat are coated in the surrounding of the above device Platform baking is arranged 80~200 DEG C of temperature according to the specific ingredient of glue material, bakes about 2~5 hours, make silica gel and latex solidified, most The quantum dot packaging with preferably isolation water oxygen ability is obtained eventually, and glassy layer, epoxy resin and the white glue of the device have Good leakproofness has preferably completely cut off the water oxygen etc. in air, has carried out good enclosed package to internal quantum dot, from And improve the reliability of device.
Although the utility model is described in detail with reference to the foregoing embodiments, come for those skilled in the art Say, it is still possible to modify the technical solutions described in the foregoing embodiments, or to part of technical characteristic into Row equivalent replacement, within the spirit and principle of the utility model, any modification, equivalent replacement, improvement and so on should all It is included within the scope of protection of this utility model.

Claims (10)

1. a kind of quantum dot LED packaging, which is characterized in that quantum dot LED packaging includes: upper surface glassy layer (1), quantum dot layer (2), LED chip (6) and encapsulating material (7), quantum dot layer (2) are located at upper surface glassy layer (1) and upside-down mounting LED chip (6) between, around upper surface glassy layer (1), quantum dot layer (2) and LED chip (6) be coated with package material Expect (7).
2. quantum dot LED packaging according to claim 1, which is characterized in that quantum dot LED packaging also wraps Include: lower surface glassy layer (3), the lower surface glassy layer (3) are located between quantum dot layer (2) and the LED chip (6) of upside-down mounting.
3. quantum dot LED packaging according to claim 2, which is characterized in that quantum dot LED packaging also wraps Include: glass surface treatment layer (4), the glass surface treatment layer (4) are coated in the surface of lower surface glassy layer (3), are located at amount Between son point layer (2) and lower surface glassy layer (3).
4. quantum dot LED packaging according to claim 3, which is characterized in that the glass surface treatment layer is UV Glue thin layer.
5. according to claim 1 or 3 any quantum dot LED packagings, which is characterized in that quantum dot LED encapsulation Device further include: protection materials (5), the protection materials (5) are coated in around quantum dot layer (2).
6. quantum dot LED packaging according to claim 5, which is characterized in that the protection materials include asphalt mixtures modified by epoxy resin Rouge.
7. quantum dot LED packaging according to claim 1, which is characterized in that quantum dot layer (2) with a thickness of 10~ 300 microns.
8. quantum dot LED packaging according to claim 1, which is characterized in that upper surface glassy layer (1) with a thickness of 50~300 microns.
9. quantum dot LED packaging according to claim 2, which is characterized in that lower surface glassy layer (3) with a thickness of 50~300 microns.
10. quantum dot LED packaging according to claim 1, which is characterized in that the encapsulating material includes white glue.
CN201821876178.2U 2018-11-14 2018-11-14 A kind of quantum dot LED packaging Active CN209344122U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201821876178.2U CN209344122U (en) 2018-11-14 2018-11-14 A kind of quantum dot LED packaging

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201821876178.2U CN209344122U (en) 2018-11-14 2018-11-14 A kind of quantum dot LED packaging

Publications (1)

Publication Number Publication Date
CN209344122U true CN209344122U (en) 2019-09-03

Family

ID=67748358

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201821876178.2U Active CN209344122U (en) 2018-11-14 2018-11-14 A kind of quantum dot LED packaging

Country Status (1)

Country Link
CN (1) CN209344122U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111192947A (en) * 2018-11-14 2020-05-22 易美芯光(北京)科技有限公司 Quantum dot LED packaging device and manufacturing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111192947A (en) * 2018-11-14 2020-05-22 易美芯光(北京)科技有限公司 Quantum dot LED packaging device and manufacturing method

Similar Documents

Publication Publication Date Title
WO2012144030A1 (en) Light emitting device and method for manufacturing same
JP2000349346A (en) Semiconductor light emitting device
CN208284498U (en) A kind of LED component, backlight lamp bar and backlight module
CN102244165A (en) LED encapsulation process
JP2012142540A (en) Light emitting diode package structure and manufacturing method of the same
CN101916806A (en) LED encapsulation method and LED encapsulation structure encapsulated with same
CN102683555A (en) Packaging structure and packaging method for light-emitting diode
CN208538852U (en) A kind of encapsulating products of LED chip
CN109285938B (en) High-thermal-stability chip-level LED packaging method and product thereof
CN104485327A (en) Preparation method of LED light source and preparation method of LED light-emitting module
CN209344074U (en) A kind of quantum dot LED encapsulation module structure
CN209344122U (en) A kind of quantum dot LED packaging
CN102282687B (en) Led packaging enabling light emitting with uniform colors
CN107248547A (en) A kind of high-power LED integrated chip encapsulating structure and its method for packing
WO2017016461A1 (en) Encapsulation material, organic light-emitting diode device and encapsulation method therefor
CN107833963A (en) The secondary airtight packaging method of quantum dot On chip white light LEDs
CN202549918U (en) Fluorescent powder coating and packaging structure
CN105870294A (en) Packaging method and structure of high-power LED
CN208873757U (en) A kind of quantum dot LED encapsulation structure
CN102738372A (en) Novel LED (light emitting diode) integrated light source module and preparation method thereof
KR101752426B1 (en) Light emitting device and light emitting diode package
CN111192947A (en) Quantum dot LED packaging device and manufacturing method
US9893248B2 (en) Substrate for changing color of light emitting diode and method for producing same
CN208507714U (en) A kind of encapsulating structure of quantum dot LED light emitting device
CN109301053A (en) A kind of quantum dot LED encapsulation structure and its manufacturing method

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant