CN104485327A - Preparation method of LED light source and preparation method of LED light-emitting module - Google Patents
Preparation method of LED light source and preparation method of LED light-emitting module Download PDFInfo
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Abstract
The invention discloses a preparation method of an LED light source and a preparation method of an LED light-emitting module. The preparation method of the LED light source comprises the following steps: bonding an LED chip on a PET film or a PTFE film with UV adhesive on the surface, and carrying out ultraviolet irradiation for initial curing; preparing an insulation rubber layer on the LED chip; then preparing a fluorescent colloid layer; using UV light to irradiate the PET film or the PTFE film to enable the UV adhesive on the surface to lose viscidity, and taking down the LED chip after encapsulation to obtain the LED light source. The LED light sources are arranged in a series-parallel connection mode, and are welded on a base plate, so that the LED light-emitting module is obtained. According to the preparation methods, in the aspect of material composition, supports and money are saved, the reliability is improved while the cost is reduced, the material cost can be reduced, the light-emitting angle is increased, the processing convenience is increased, and the production link is simplified. The position of fluorescent powder is far away from the chip through the insulation rubber layer, so that the thermal quenching and thermal efficiency of the fluorescent powder are reduced, and the lighting effect and long-term lumen maintenance are improved.
Description
Technical field
The present invention relates to LED chip packaging technology field, be specifically related to the preparation method of a kind of LED light source and LED illuminating module.
Background technology
Semiconductor light-emitting-diode (LED) is a kind of can be the semiconductor of visible ray by electric energy conversion.LED, as forth generation lighting source, has become one of 21 century field most with prospects.
Usually, LED light source is all the encapsulating structure with support, gold thread, fluorescent material, glue etc., if desired forms suitable lighting, then use LED light source composition array or the module of multiple complete package.From LED bare chip to making LED lamp, the manufacturing process processing procedure of whole production and application is very long, first must complete the complete package of single LEDs light source, then be welded on substrate as required, then be assembled into final light fixture.
Existing LED light source particle, include the composition materials such as support, chip, gold thread, glue, fluorescent material, manufacturing process is more, and Material Cost, time cost and human cost are all higher.And the TOP type LED product of main flow, lighting angle, by the impact of support shape, all between 100-120 degree, is difficult to the demand meeting the large lighting angle of lighting field, high-luminous-efficiency.
Application publication number is that the Chinese invention patent application of CN 102569562A (application number is 201210017820.2) discloses a kind of LED encapsulation method, it comprises the steps: A) first LED chip, several gold thread, colloid, fluorescent material and support are provided, the top of described support is formed with reflector, and described reflector has smooth bottom: B) then LED chip is installed on the bottom of reflector; C) then one end of gold thread is welded on LED chip, the other end of gold thread is welded in the bottom of reflector, thus LED chip and support are conducted; D) fluorescent material and colloid are made powder slurry, after stirring, direct slurry by powder is coated on LED chip; E) support is put into centrifuge, the centrifugal force utilizing centrifuge rotor High Rotation Speed to produce, make fluorescent material be sunken to the bottom of colloid; F) support is toasted, thus solidification colloid.During use, the LED of this encapsulation is arranged on circuit board and carries out luminescence.
Authorization Notice No. is that the Chinese utility model of CN 201868426U (application number is 201020581331.6) discloses a kind of LED light source, comprise substrate, chip, support, gold thread and fluorescent material, substrate is transparency carrier, and transparency carrier is provided with inner groovy.Chip is connected by gold thread with support.Fluorescent material is divided into phosphor powder layer and lower phosphor powder layer, and upper phosphor powder layer is coated in above chip, and lower phosphor powder layer is coated in beneath chips, and upper phosphor powder layer, chip and lower phosphor powder layer are encapsulated in the inner groovy of transparency carrier by insulating cement.Transparency carrier is one in rectangular shape, inner groovy on it is one, inner groovy is in-line, chip in inner groovy is two rows arranged in parallel, often row all has polylith chip, is connected in parallel on support by gold thread, chip package is 2 rows arranged in parallel, often row all there is polylith chip, be connected in parallel on support by gold thread, can 360 degree of luminescences in the transparency carrier of chip package.
Above-mentioned LED light source of preparing includes support, gold thread, and technological process is more, and Material Cost, time cost and human cost are all higher, and lighting angle is by the impact of support shape.
Prior art is from LED bare chip to making LED lamp, and the manufacturing process of whole production and application is very long, first must complete the complete package of single LEDs light source, then be welded on substrate as required, then be assembled into final light fixture.The present invention is from material formation, and eliminate support and gold thread, it improves reliability while reducing costs, and meanwhile, increases processing convenience, simplifies production link; The passage of heat of flip-chip is larger, can keep better long-term radiating effect, reduce light decay speed; Make the position of fluorescent material away from chip by isolation glue-line, the thermal quenching and the heat efficiency that decrease fluorescent material reduce, and improve light efficiency and long-term lux maintenance; Adopt UV technology to carry out glue curing, shorten the time of glue curing, reduce production cycle and time cost; The lighting angle of finished product increases to 140-155 degree from 110-120 degree, is more conducive to the luminous intensity distribution design of lighting.
Summary of the invention
The invention provides a kind of preparation method of LED light source, can Material Cost be reduced, increase lighting angle, increase processing convenience, simplify production link.
A preparation method for LED light source, comprises the following steps:
(1) LED chip is bonded in the PET film or PTFE film that there be UV glue (without shadow glue) on surface, Ultraviolet radiation primary solidification;
PET film refers to high temperature resistance polyester film, and PTFE film adopts polytetrafluoroethyldispersion dispersion resin, and through the capillary film that the special process such as premix, extruding, calendering, biaxial tension are produced, PET film or PTFE film all can adopt prior art;
(2) preparation isolation glue-line on LED chip;
(3) on the LED chip of preparation isolation glue-line, fluorescent colloid layer is prepared;
(4) with ultraviolet light (UV light), PET film or PTFE film are irradiated, make the UV glue on its surface lose viscosity, take off the LED chip after encapsulation, obtain LED light source.
In the present invention, from material is formed, eliminate support and gold thread, while reducing costs, improve reliability, can Material Cost be reduced, increase lighting angle, increase processing convenience, simplify production link.Make the position of fluorescent material away from chip by isolation glue-line, the thermal quenching and the heat efficiency that decrease fluorescent material reduce, and improve light efficiency and long-term lux maintenance.
In step (1), LED chip generally has six faces, face be bonded in the PET film or PTFE film that there be UV glue (without shadow glue) on surface, on other five faces, glue-line and fluorescent colloid layer are isolated in spraying.
Described LED chip adopts flip type LED chip, and the passage of heat of flip-chip is larger, and can keep better long-term radiating effect, reduce light decay speed, preparation method of the present invention is applicable to the encapsulation of flip type LED chip very much.
Each LED chip is equidistantly distributed and is bonded in the PET film or PTFE film that there be UV glue (without shadow glue) on surface, different LED chips adopts the mode equidistantly distributed, convenient preparation on LED chip isolates glue-line and fluorescent colloid layer, as convenient by spraying method preparation isolation glue-line and fluorescent colloid layer.
The time of described Ultraviolet radiation primary solidification is 1 ~ 20s.
Described PET film or the thickness of PTFE film are 0.75 ± 0.65mm.
In step (2), preparation isolation glue-line on LED chip, comprise: first spraying one deck refractive index on the surface (totally 5 faces) of LED chip is greater than 1.5 (i.e. n > 1.5, be less than 2.5 simultaneously) organosilicon glue, then carry out the solidification isolating glue-line, obtain isolating glue-line;
Described organosilicon glue can adopt commercially available prod, also can prepare according to existing open source literature.
The condition of the solidification of described isolation glue-line is: the solidification carrying out 25 ± 10min in 95 ~ 105 DEG C of baking ovens, or, irradiate 30 ± 15s with the ultraviolet light lamp (UV lamp) of wavelength 350 ~ 380nm and be cured.
The thickness of the spraying of described organosilicon glue is 0.5 ± 0.25mm.
The SiO of average grain diameter 10 ± 5nm is added in described organosilicon glue
2particle, this SiO
2the quality of particle accounts for organic silica gel water and SiO
27.5% ± 5% of particle gross mass.This SiO
2particle plays strengthening action, can improve the intensity of isolation glue-line.
In step (3), the LED chip of preparation isolation glue-line prepares fluorescent colloid layer, comprise: after isolation glue-line having prepared by LED chip, spray one deck refractive index again and be greater than the organosilicon glue that 1.4 (n > 1.4 is less than 2.5 simultaneously) were mixed with fluorescent material, carry out the solidification of fluorescent colloid layer again, complete the preparation of fluorescent colloid layer.
The described organosilicon glue being mixed with fluorescent material is made up of fluorescent material and organosilicon glue, described is mixed with in the organosilicon glue of fluorescent material, fluorescent material and organosilicon glue all can adopt prior art, adopt commercially available prod or adopt disclosed technology preparation, wherein, the mass percentage of fluorescent material is 25% ± 15%.
Described is mixed with the SiO adding average grain diameter 10 ± 5nm in the organosilicon glue of fluorescent material
2particle, this SiO
2the quality of particle accounts for the organosilicon glue and SiO that are mixed with fluorescent material
27.5% ± 5% of particle gross mass.This SiO
2particle on the one hand plays strengthening action, improves the intensity of fluorescent colloid layer, on the other hand, as antisolvent precipitation powder, can the precipitation that occurs at organosilicon glue of Fluorophotometry powder, and fluorescent material in fluorescent colloid layer is also uniformly dispersed.
The described thickness being mixed with the spraying of the organosilicon glue of fluorescent material is 0.5 ± 0.25mm.
The condition of the solidification of described fluorescent colloid layer is: the baking oven solidification 2 ± 1h putting into 150 ± 20 DEG C.
The LED light source obtained is white LED light source, namely adopts corresponding LED chip and fluorescent material, as sprayed yellow fluorescent powder on blue-light LED chip, making blue light become white light with yellow light mix, can obtain white LED light source.
A preparation method for LED illuminating module, comprises the following steps:
(1) LED chip is bonded in the PET film or PTFE film that there be UV glue (without shadow glue) on surface;
PET film refers to high temperature resistance polyester film;
PTFE film adopts polytetrafluoroethyldispersion dispersion resin, through the capillary film that the special process such as premix, extruding, calendering, biaxial tension are produced;
(2) preparation isolation glue-line on LED chip;
(3) on the LED chip of preparation isolation glue-line, fluorescent colloid layer is prepared;
(4) with ultraviolet light (UV light), PET film or PTFE film are irradiated, make the UV glue on its surface lose viscosity, take off the LED chip after encapsulation, obtain LED light source.
(5) LED light source is arranged with series-parallel system, be welded on substrate, obtain LED illuminating module.
In step (5), described substrate is PCB or Al substrate, and PCB is printed circuit board, and Al substrate is the Al-Mg-Si series high plasticity alloy sheets of low alloying, thermal resistance can be down to minimum, make it have fabulous heat-conductive characteristic; General single sided board is made up of three-decker, is circuit layer (Copper Foil), insulating barrier and metal-based layer respectively.
Described LED light source is welded on the mode on substrate, can utilize the SnAu Eutectic Layer on the electrode of flip type LED chip, or uses SnAgCu class tin cream, welds.
The present invention first by the complete package of single LEDs chip light source, obtains LED light source, then is welded on as required on substrate, forms LED illuminating module, obtains light fixture finally by assembling.
Compared with prior art, the present invention has following beneficial effect:
Accompanying drawing explanation
Fig. 1 is the structural representation after colloid layer packaging LED chips; , colloid layer 1 comprises isolation glue-line and fluorescent colloid layer.
Fig. 2 is the structural representation of LED white light source when not departing from basement membrane;
Fig. 3 is the structural representation that LED white light source is welded on substrate.
Embodiment
Embodiment 1
(1) LED chip adopts flip chip type blue-light LED chip, and being bonded in surface with being equidistantly distributed has in the PET film of UV glue, and the thickness of film is 0.75mm, ultraviolet primary solidification 8s;
(2) spray the organosilicon glue of one deck refractive index n=1.56 on the surface (main light emission face and four sides) of LED chip, in this organosilicon glue, be added with the SiO of average grain diameter 10nm
2particle, this SiO
2the quality of particle accounts for organic silica gel water and SiO
27.5% of particle gross mass, the thickness of spraying is 0.5mm, then puts into the precuring that 100 DEG C of baking ovens carry out 25min, preparation isolation glue-line;
(3) the organosilicon glue being mixed with fluorescent material spraying one deck refractive index n=1.45 is again taken out, the organosilicon glue being mixed with fluorescent material is made up of fluorescent material (yellow fluorescent powder) and organosilicon glue, the mass percentage of fluorescent material is 25%, and this is mixed with the SiO adding average grain diameter 10nm in the organosilicon glue of fluorescent material
2particle, this SiO
2the quality of particle accounts for the organosilicon glue and SiO that are mixed with fluorescent material
27.5% of particle gross mass, the thickness of spraying is 0.5mm, then the baking oven putting into 150 DEG C solidifies 2h, preparation fluorescent colloid layer;
As shown in Figure 1, LED chip 2 is bonded on basement membrane 3 (PET film), and colloid layer 1 is wrapped on LED chip 2, and colloid layer 1 comprises isolation glue-line and fluorescent colloid layer.
(4) with UV light, PET film is irradiated after taking out from baking oven, make the UV glue on its surface lose viscosity, take off the LED chip that five bread are wrapped up in, namely obtain LED white light source.
As shown in Figure 2, LED white light source 4 by UV illumination penetrate aging after can depart from from basement membrane 3 (PET film), obtain LED white light source 4.
LED white light source prepared by the method is than the traditional packaged type adopting gold thread, support in the past, and its cost will decline about 20%, and lighting angle increases to 155 degree from 110-120 degree, and the production cycle also shortens greatly.
Embodiment 2
The LED white light source prepared by above-described embodiment 1, with the arrangement of certain series-parallel system, uses tin cream to be welded on PCB, obtains LED white-light emitting module.
As shown in Figure 3, LED white light source 4 is welded on the substrate 5 by series system.
Embodiment 3
(1) LED chip adopts flip chip type blue-light LED chip, and being bonded in surface with being equidistantly distributed has in the PTFE film of UV glue, and the thickness of film is 1.2mm, ultraviolet primary solidification 15s;
(2) spray the organosilicon glue of one deck refractive index n=1.55 on the surface (main light emission face and four sides) of LED chip, in this organosilicon glue, be added with the SiO of average grain diameter 15nm
2particle, this SiO
2the quality of particle accounts for organic silica gel water and SiO
210% of particle gross mass, the thickness of spraying is 0.6mm, then puts into the precuring that 100 DEG C of baking ovens carry out 35min;
(3) the organosilicon glue being mixed with fluorescent material spraying one deck refractive index n=1.42 is again taken out, the organosilicon glue being mixed with fluorescent material is made up of fluorescent material (yellow fluorescent powder) and organosilicon glue, the mass percentage of fluorescent material is 35%, and this is mixed with the SiO adding average grain diameter 15nm in the organosilicon glue of fluorescent material
2particle, this SiO
2the quality of particle accounts for the organosilicon glue and SiO that are mixed with fluorescent material
210% of particle gross mass.The thickness of spraying is 0.7mm, then the baking oven putting into 165 DEG C solidifies 1h, preparation fluorescent colloid layer;
As shown in Figure 1, LED chip 2 is bonded on basement membrane 3 (PTFE film), and colloid layer 1 is wrapped on LED chip 2, and colloid layer 1 comprises isolation glue-line and fluorescent colloid layer.
(4) with UV light, PTFE film is irradiated after taking out from baking oven, make the UV glue on its surface lose viscosity, take off the LED chip that five bread are wrapped up in, namely obtain LED white light source.
As shown in Figure 2, LED white light source 4 by UV illumination penetrate aging after can depart from from basement membrane 3, obtain LED white light source 4.
LED white light source prepared by the method is than the traditional approach adopting gold thread, support in the past, and its cost will decline about 20%, and lighting angle increases to 150 degree from 110-120 degree, and the production cycle also shortens greatly.
Embodiment 4
The LED white light source prepared by above-described embodiment 3, with the arrangement of certain series-parallel system, uses tin cream to be welded on Al substrate, obtains LED white-light emitting module.
As shown in Figure 3, LED white light source 4 is welded on the substrate 5 by series system.
Embodiment 5
(1) LED chip adopts flip chip type blue-light LED chip, and being bonded in surface with being equidistantly distributed has in the PET film of UV glue, and the thickness of film is 0.3mm, ultraviolet primary solidification 5s;
(2) spray the organosilicon glue of one deck refractive index n=1.55 on the surface (main light emission face and four sides) of LED chip, in this organosilicon glue, be added with the SiO of average grain diameter 5nm
2particle, this SiO
2the quality of particle accounts for organic silica gel water and SiO
24% of particle gross mass, the thickness of spraying is 0.4mm, carries out precuring with the UV light irradiation 15s of wavelength 365nm, preparation isolation glue-line;
(3) the organosilicon glue being mixed with fluorescent material spraying one deck refractive index n=1.45 is again taken out, the organosilicon glue being mixed with fluorescent material is made up of fluorescent material and organosilicon glue, the mass percentage of fluorescent material is 15%, and this is mixed with the SiO being added with average grain diameter 5nm in the organosilicon glue of fluorescent material
2particle, this SiO
2the quality of particle accounts for the organosilicon glue and SiO that are mixed with fluorescent material
247% of particle gross mass.The thickness of spraying is 0.4mm, then the baking oven putting into 140 DEG C solidifies 3h, preparation fluorescent colloid layer;
As shown in Figure 1, LED chip 2 is bonded on basement membrane 3 (PET film), and colloid layer 1 is wrapped on LED chip 2, and colloid layer 1 comprises isolation glue-line and fluorescent colloid layer.
(4) with UV light, PET film is irradiated after taking out from baking oven, make the UV glue on its surface lose viscosity, take off the LED chip that five bread are wrapped up in, namely obtain LED white light source.
As shown in Figure 2, LED white light source 4 by UV illumination penetrate aging after can depart from from basement membrane 3, obtain LED white light source 4.
LED white light source prepared by the method is than the traditional approach adopting gold thread, support in the past, and its cost will decline about 20%, and lighting angle increases to 150 degree from 110-120 degree, and the production cycle also shortens greatly.
Embodiment 6
The LED white light source prepared by above-described embodiment 1, with the arrangement of certain series-parallel system, uses tin cream to be welded on Al substrate, obtains LED white-light emitting module.
As shown in Figure 3, LED white light source 4 is welded on the substrate 5 by series system.
Claims (10)
1. a preparation method for LED light source, is characterized in that, comprises the following steps:
(1) LED chip is bonded in the PET film or PTFE film that there be UV glue on surface, Ultraviolet radiation primary solidification;
(2) preparation isolation glue-line on LED chip;
(3) on the LED chip of preparation isolation glue-line, fluorescent colloid layer is prepared;
(4) with ultraviolet light, PET film or PTFE film are irradiated, make the UV glue on its surface lose viscosity, take off the LED chip after encapsulation, obtain LED light source.
2. the preparation method of LED light source according to claim 1, is characterized in that, in step (1), the time of described Ultraviolet radiation primary solidification is 1 ~ 20s;
Described PET film or the thickness of PTFE film are 0.75 ± 0.65mm.
3. the preparation method of LED light source according to claim 1, it is characterized in that, in step (2), preparation isolation glue-line on LED chip, comprise: the organosilicon glue being first greater than 1.5 in surface spraying one deck refractive index of LED chip, then carry out the solidification isolating glue-line, obtain isolating glue-line.
4. the preparation method of LED light source according to claim 3, it is characterized in that, the condition of the solidification of described isolation glue-line is: the solidification carrying out 25 ± 10min in 95 ~ 105 DEG C of baking ovens, or, be cured with the ultraviolet light light irradiation 30 ± 15s of wavelength 350 ~ 380nm;
The thickness of the spraying of described organosilicon glue is 0.5 ± 0.25mm.
5. the preparation method of LED light source according to claim 3, is characterized in that, adds the SiO of average grain diameter 10 ± 5nm in described organosilicon glue
2particle, this SiO
2the quality of particle accounts for organic silica gel water and SiO
27.5% ± 5% of particle gross mass.
6. the preparation method of LED light source according to claim 1, it is characterized in that, in step (3), the LED chip of preparation isolation glue-line prepares fluorescent colloid layer, comprise: after isolation glue-line having prepared by LED chip, spray one deck refractive index again and be greater than the organosilicon glue that 1.4 are mixed with fluorescent material, then carry out the solidification of fluorescent colloid layer, complete the preparation of fluorescent colloid layer.
7. the preparation method of LED light source according to claim 6, is characterized in that, the described organosilicon glue being mixed with fluorescent material is made up of fluorescent material and organosilicon glue, and the mass percentage of fluorescent material is 25% ± 15%;
Described is mixed with the SiO adding average grain diameter 10 ± 5nm in the organosilicon glue of fluorescent material
2particle, this SiO
2the quality of particle accounts for the organosilicon glue and SiO that are mixed with fluorescent material
27.5% ± 5% of particle gross mass.
8. the preparation method of LED light source according to claim 6, is characterized in that, the described thickness being mixed with the spraying of the organosilicon glue of fluorescent material is 0.5 ± 0.25mm.
9. the preparation method of LED light source according to claim 6, is characterized in that, the condition of the solidification of described fluorescent colloid layer is: the baking oven solidification 2 ± 1h putting into 150 ± 20 DEG C.
10. a preparation method for LED illuminating module, is characterized in that, comprises the following steps:
(1) LED chip is bonded in the PET film or PTFE film that there be UV glue on surface;
(2) preparation isolation glue-line on LED chip;
(3) on the LED chip of preparation isolation glue-line, fluorescent colloid layer is prepared;
(4) with ultraviolet light, PET film or PTFE film are irradiated, make the UV glue on its surface lose viscosity, take off the LED chip after encapsulation, obtain LED light source.
(5) LED light source is arranged with series-parallel system, be welded on substrate, obtain LED illuminating module.
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| CN109888084A (en) * | 2019-02-27 | 2019-06-14 | 福建天电光电有限公司 | A kind of fluorescent glue and application its increase LED semiconductor light homogenization process |
| CN109950183A (en) * | 2019-04-11 | 2019-06-28 | 深圳市丰泰工业科技有限公司 | Once shift the die bond technique of multiple chips |
| CN110242877A (en) * | 2019-04-12 | 2019-09-17 | 华芯半导体研究中心(广州)有限公司 | A kind of high heat dissipation high-power LED lamp bead and preparation method thereof |
| CN111048653A (en) * | 2019-12-26 | 2020-04-21 | 深圳市大柏光电子科技有限公司 | Process for improving brightness and output availability of LED lamp beads |
| CN113130456A (en) * | 2019-12-31 | 2021-07-16 | Tcl集团股份有限公司 | LED chip mounting and pasting method |
| CN113437198A (en) * | 2021-07-13 | 2021-09-24 | 中国科学院苏州纳米技术与纳米仿生研究所广东(佛山)研究院 | Deep ultraviolet LED packaging method |
| CN107681038B (en) * | 2017-09-18 | 2024-02-20 | 广东晶科电子股份有限公司 | Preparation method of LED device |
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| CN107681038B (en) * | 2017-09-18 | 2024-02-20 | 广东晶科电子股份有限公司 | Preparation method of LED device |
| CN109888084A (en) * | 2019-02-27 | 2019-06-14 | 福建天电光电有限公司 | A kind of fluorescent glue and application its increase LED semiconductor light homogenization process |
| CN109950183A (en) * | 2019-04-11 | 2019-06-28 | 深圳市丰泰工业科技有限公司 | Once shift the die bond technique of multiple chips |
| CN110242877A (en) * | 2019-04-12 | 2019-09-17 | 华芯半导体研究中心(广州)有限公司 | A kind of high heat dissipation high-power LED lamp bead and preparation method thereof |
| CN111048653A (en) * | 2019-12-26 | 2020-04-21 | 深圳市大柏光电子科技有限公司 | Process for improving brightness and output availability of LED lamp beads |
| CN113130456A (en) * | 2019-12-31 | 2021-07-16 | Tcl集团股份有限公司 | LED chip mounting and pasting method |
| CN113130456B (en) * | 2019-12-31 | 2022-09-06 | Tcl科技集团股份有限公司 | LED chip mounting and pasting method |
| CN113437198A (en) * | 2021-07-13 | 2021-09-24 | 中国科学院苏州纳米技术与纳米仿生研究所广东(佛山)研究院 | Deep ultraviolet LED packaging method |
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Address after: Yuhang Xianlin District of Hangzhou City, Zhejiang province 311122 Xian Xing Lu 31, No. 33 Patentee after: Hangzhou Hangzhou Ke optoelectronic group Limited by Share Ltd Address before: Hangzhou City, Zhejiang province 310022 Yuhang District Xianlin Street Xian Xing Lu 31, No. 33 Patentee before: Hangzhou Hangke Photoelectric Co., Ltd. |