CN101876406A - Technique for manufacturing high-power light emitting diode (LED) lamp - Google Patents

Technique for manufacturing high-power light emitting diode (LED) lamp Download PDF

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Publication number
CN101876406A
CN101876406A CN2009102505048A CN200910250504A CN101876406A CN 101876406 A CN101876406 A CN 101876406A CN 2009102505048 A CN2009102505048 A CN 2009102505048A CN 200910250504 A CN200910250504 A CN 200910250504A CN 101876406 A CN101876406 A CN 101876406A
Authority
CN
China
Prior art keywords
led
high
primer
led lamp
glue
Prior art date
Application number
CN2009102505048A
Other languages
Chinese (zh)
Inventor
王骞
Original Assignee
东莞市光宇新能源科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 东莞市光宇新能源科技有限公司 filed Critical 东莞市光宇新能源科技有限公司
Priority to CN2009102505048A priority Critical patent/CN101876406A/en
Publication of CN101876406A publication Critical patent/CN101876406A/en

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Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate

Abstract

The invention relates to the technical field of techniques for manufacturing light emitting diode (LED) lamps, in particular to a technique for manufacturing a high-power LED lamp. The technique comprises the following steps: die-bonding with fulmargin, welding the wires, sealing the primer, coating a fluorescent powder glue film, sealing finish, and the like, wherein the colloid in each step is dried in a sectional baking mode. After using the technical scheme, a LED chips is fixed with fulmargin, so that the LED chip can emit heat easily; before coating the fluorescent powder glue film, a layer of primer is sealed so as to tile and cover the fluorescent powder glue film on the LED chip, thereby avoiding the wires are damaged when the fluorescent powder is spotted, and isolating the fluorescent powder layer from the LED chip to avoid direct contact and be beneficial to deferring senility; and in addition, the primer, fluorescent powder glue film and finish are baked in a sectional mode, so that all the layers are uniform and can be well combined.

Description

A kind of manufacture craft of high-powered LED lamp

Technical field:

The present invention relates to the manufacture craft technical field of LED lamp, the manufacture craft of refering in particular to a kind of high-powered LED lamp.

Background technology:

The LED lamp is received more and more widely application owing to have superior energy saving, and high-powered LED lamp has had the trend that replaces existing halogen street lamp as large-scale public arena illuminator lamps such as street lamps.Generally speaking, large-scale public arena illuminator lamp requires to use penetrability gold-tinted preferably, and existing yellow light LED lamp mainly is to utilize blue-light LED chip to add fluorescent material to excite and produce gold-tinted, so the coating of fluorescent material is one of key in the high-powered LED lamp manufacture craft.At present the application pattern that generally adopts is: after led chip had welded lead, at the direct coating fluorescent powder of chip surface, this mode phosphor powder layer was difficult to coating evenly, and thickness is difficult to control, caused the LED lamp efficiency low, and is photochromic bad; A kind of technological process for coating fluorescent powder of high-power LED chip is disclosed and Chinese application number is 200710124607.0 patent application, this method is to utilize the led chip model to form the transparent silica gel box dam around one earlier, again with phosphor gel point on the led chip surface, utilize the flowability of box dam and phosphor gel to make its coating evenly, though this method can solve fluorescent powder coated uniform problem, but it operates very complicated, and efficient is low, and breaks its lead easily; In addition, fluorescent material directly directly contacts with led chip, not only influences the heat radiation and the brightness of illumination of led chip, and the heat of led chip easily makes the fluorescent material accelerated ageing, simplifies the effect of fluorescent material, thereby shortened the service life of high-powered LED lamp.

Summary of the invention:

The objective of the invention is to overcome the above-mentioned weak point of existing technology, provide a kind of simple to operate, fluorescent powder coated evenly, the manufacture craft of the little high-powered LED lamp of decay.

The present invention realizes that the technical scheme that its purpose adopts is: a kind of manufacture craft of high-powered LED lamp, described high-powered LED lamp comprises led support, be fixed in a plurality of led chips, lead on the described led support, be arranged on the described led support and be positioned at the insulating cement frame of led chip periphery, and wherein: the manufacture craft of described high-powered LED lamp comprises the steps:

A. at led support surface point elargol substrate, led chip is placed on the elargol, and oven dry is fixed led chip;

B. welding lead between the led chip that fixes;

C. at led support surface front cover layer primer, make primer cover described led chip, and oven dry;

D. evenly adhere to layer of fluorescent powder glue-line and oven dry on the surface of described primer;

E. encapsulate aspect glue and oven dry at the phosphor gel laminar surface at last.

Wherein, the baking temperature of elargol is 140 ℃~160 ℃ among the described step a, and stoving time is 50~70 minutes.

The bake process of primer is among the described step c: toasted 10~20 minutes between 50 ℃~70 ℃ of temperature; Between 140 ℃~160 ℃, toasted 25~35 minutes then.

The bake process of fluorescent material glue-line is for respectively between 75 ℃~85 ℃, 95 ℃~105 ℃, 115 ℃~125 ℃, 145 ℃~155 ℃ of temperature in the described steps d, and each toasted 8~12 minutes.

The bake process of face glue is among the described step e: respectively toasted 8~12 minutes between 45 ℃~55 ℃, 55 ℃~65 ℃, 65 ℃~75 ℃ of temperature respectively earlier; Between 140 ℃~160 ℃ of temperature, toasted 20~40 minutes then.

After finishing described step b, c, d, e, carry out circuit test respectively.

Described primer, fluorescent material glue-line, the used glue material of face glue are transparent silica gel or epoxy resin.

After the present invention adopts technique scheme, utilize elargol to fix led chip, help the led chip heat radiation; And before the coating fluorescent powder glue-line, first front cover layer primer makes its tiling and covers led chip, breaks lead in the time of both can avoiding dot fluorescent powder, makes again and isolates between phosphor powder layer and the led chip, avoids direct contact, the aging of the fluorescent material that helps slowing down; In addition, the present invention adopts the segmented baking when back cover glue, fluorescent material glue-line, face glue, has both helped the even of each level, also helps between each level in conjunction with getting better.

Description of drawings:

Fig. 1 is the planar structure schematic diagram of high-powered LED lamp of the present invention;

Fig. 2 is the cutaway view of high-powered LED lamp of the present invention.

The specific embodiment:

The present invention is further described below in conjunction with specific embodiments and the drawings.

As shown in Figure 1, 2, high-powered LED lamp of the present invention comprises led support 1, and this led support 1 has a concave plane 10, and concave plane 10 is used for laying some led chips 2, and lead 3 between the led chip 2, and outermost end lead 3 connects both positive and negative polarity pin 31,32 respectively; 10 peripheries, concave plane at led support 1 are provided with an insulating cement frame 4, and this insulating cement frame 4 is used for encapsulation process and surrounds colloid, avoids excessive.

In conjunction with shown in Figure 2, high-powered LED lamp of the present invention is made by following steps:

A. at led support 1 surface point elargol 5 substrates, led chip 2 is placed on the elargol 5, can the both positive and negative polarity of led chip 2 be arranged in proper order according to circuit design during arrangement, be beneficial to follow-up bonding wire operation; It is fixing that oven dry makes led chip 2 then; The baking temperature of elargol 5 is 140 ℃~160 ℃, and stoving time is 50~70 minutes.Elargol mainly plays fixed L ED chip and auxiliary LED chip heat radiation;

B. welding lead 3 between the led chip 2 that fixes; Carry out circuit test behind the welding lead 3, determined whether electric leakage, and in time repair, avoid defective products occurring after the encapsulation;

C. at led support 1 surperficial front cover layer primer 6, make primer 6 cover described led chip 2, and oven dry; The thickness of primer 6 is advisable with the upper surface of lucky covering led chip 2; The bake process of primer 6 is: toasted 10~20 minutes between 50 ℃~70 ℃ of temperature; Toasted 25~35 minutes between 140 ℃~160 ℃ then, its objective is primer is slowly spread evenly and to keep primer 6 surfacings, hot setting is again avoided at the beginning the too high primer of temperature not spread evenly and is just solidified;

D. evenly adhere to layer of fluorescent powder glue-line 7 and oven dry on the surface of described primer 6; Phosphor gel is to utilize fluorescent material and colloid fully to mix, and the surface that is coated to primer 6 again forms fluorescent material glue-line 7; The bake process of fluorescent material glue-line 7 is for respectively between 75 ℃~85 ℃, 95 ℃~105 ℃, 115 ℃~125 ℃, 145 ℃~155 ℃ of temperature, each toasted 8~12 minutes, its purpose also is that the diffusion of fluorescent material glue-line evenly and with primer is combined, and make the surface of fluorescent material uniform settlement, hot setting slowly then to primer 6;

E. at last in fluorescent material glue-line 7 surface encapsulation, one aspect glue 8 and oven dry, the bake process of face glue 8 is: respectively toasted 8~12 minutes between 45 ℃~55 ℃, 55 ℃~65 ℃, 65 ℃~75 ℃ of temperature respectively earlier; Between 140 ℃~160 ℃ of temperature, toasted 20~40 minutes then, its objective is the diffusion of face glue evenly and with the fluorescent material glue-line is combined better, then hot setting;

Used glue material is transparent silica gel or epoxy resin in primer 6 described in the present invention, fluorescent material glue-line 7, the face glue 8, perhaps also can be other transparent materials.

After finishing described step c, d, e, also can carry out circuit test respectively, qualified further to guarantee product, avoid doing over again or producing defective work.

Claims (7)

1. the manufacture craft of a high-powered LED lamp, described high-powered LED lamp comprises led support (1), be fixed in a plurality of led chips (2), lead (3) on the described led support (1), be arranged at described led support (1) goes up and is positioned at the peripheral insulating cement frame (4) of led chip (2), and it is characterized in that: the manufacture craft of described high-powered LED lamp comprises the steps:
A. at led support (1) surface point elargol (5) substrate, led chip (2) is placed on the elargol (5), and oven dry makes led chip (2) fixing;
B. welding lead (3) between the led chip that fixes (2);
C. at led support (1) surperficial front cover layer primer (6), make primer (6) cover described led chip (2), and oven dry;
D. evenly adhere to layer of fluorescent powder glue-line (7) and oven dry on the surface of described primer (6);
E. at last in fluorescent material glue-line (7) surface encapsulation one aspect glue (8) and oven dry.
2. the manufacture craft of a kind of high-powered LED lamp according to claim 1, it is characterized in that: the baking temperature of elargol among the described step a (5) is 140 ℃~160 ℃, and stoving time is 50~70 minutes.
3. the manufacture craft of a kind of high-powered LED lamp according to claim 1, it is characterized in that: the bake process of primer among the described step c (6) is: toasted 10~20 minutes between 50 ℃~70 ℃ of temperature; Between 140 ℃~160 ℃, toasted 25~35 minutes then.
4. the manufacture craft of a kind of high-powered LED lamp according to claim 1, it is characterized in that: the bake process of fluorescent material glue-line (7) is for respectively between 75 ℃~85 ℃, 95 ℃~105 ℃, 115 ℃~125 ℃, 145 ℃~155 ℃ of temperature in the described steps d, and each toasted 8~12 minutes.
5. the manufacture craft of a kind of high-powered LED lamp according to claim 1, it is characterized in that: the bake process of face glue (8) is among the described step e: respectively toasted 8~12 minutes between 45 ℃~55 ℃, 55 ℃~65 ℃, 65 ℃~75 ℃ of temperature respectively earlier; Between 140 ℃~160 ℃ of temperature, toasted 20~40 minutes then.
6. the manufacture craft of a kind of high-powered LED lamp according to claim 1 is characterized in that: carry out circuit test respectively after finishing described step b, c, d, e.
7. the manufacture craft of a kind of high-powered LED lamp according to claim 1, it is characterized in that: described primer (6), fluorescent material glue-line (7), the used glue material of face glue (8) are transparent silica gel or epoxy resin.
CN2009102505048A 2009-12-14 2009-12-14 Technique for manufacturing high-power light emitting diode (LED) lamp CN101876406A (en)

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Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102324453A (en) * 2011-09-30 2012-01-18 深圳市灏天光电有限公司 High-power LED (Light Emitting Diode) packaging process of double-layer lens
CN102347297A (en) * 2011-09-30 2012-02-08 常熟市广大电器有限公司 Packaging structure for a plurality of small-size chips
CN102410483A (en) * 2011-11-14 2012-04-11 黎昌兴 LED light source suitable for lighting lamp of vehicles and boats
CN102620180A (en) * 2011-01-26 2012-08-01 杨然森 LED (Light-Emitting diode) multi-chip module and manufacturing method thereof
CN103759225A (en) * 2013-12-09 2014-04-30 广东雪莱特光电科技股份有限公司 Optical reflector and LED (Light-Emitting Diode) luminous element
CN103956358A (en) * 2014-05-08 2014-07-30 中国科学院半导体研究所 Heat dissipation structure and heat dissipation method of LED module
CN103972222A (en) * 2014-06-03 2014-08-06 宁波升谱光电半导体有限公司 LED (light-emitting diode) light source packaging method, LED light source packaging structure and light source module
CN104051598A (en) * 2013-03-12 2014-09-17 安徽湛蓝光电科技有限公司 LED packaging method of steel-mesh-type silkscreen fluorescent glue
CN104081112A (en) * 2011-11-07 2014-10-01 克利公司 High voltage array light emitting diode (LED) devices, fixtures and methods
US9203004B2 (en) 2010-11-22 2015-12-01 Cree, Inc. Light emitting devices for light emitting diodes (LEDs)
US9209354B2 (en) 2010-11-22 2015-12-08 Cree, Inc. Light emitting devices for light emitting diodes (LEDs)
CN105127050A (en) * 2015-07-22 2015-12-09 宁波百立光电有限公司 Sealant pouring process for waterproof lamp strips
US9300062B2 (en) 2010-11-22 2016-03-29 Cree, Inc. Attachment devices and methods for light emitting devices
US9490235B2 (en) 2010-11-22 2016-11-08 Cree, Inc. Light emitting devices, systems, and methods
CN107425096A (en) * 2017-07-21 2017-12-01 中山市华南理工大学现代产业技术研究院 A kind of long-range coating phosphor sheet and preparation method thereof
CN107452854A (en) * 2017-08-16 2017-12-08 芜湖晶鑫光电照明有限公司 A kind of LED production technology
USD823492S1 (en) 2016-10-04 2018-07-17 Cree, Inc. Light emitting device
US10043960B2 (en) 2011-11-15 2018-08-07 Cree, Inc. Light emitting diode (LED) packages and related methods
US10134961B2 (en) 2012-03-30 2018-11-20 Cree, Inc. Submount based surface mount device (SMD) light emitter components and methods

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9209354B2 (en) 2010-11-22 2015-12-08 Cree, Inc. Light emitting devices for light emitting diodes (LEDs)
US9203004B2 (en) 2010-11-22 2015-12-01 Cree, Inc. Light emitting devices for light emitting diodes (LEDs)
US9490235B2 (en) 2010-11-22 2016-11-08 Cree, Inc. Light emitting devices, systems, and methods
US9300062B2 (en) 2010-11-22 2016-03-29 Cree, Inc. Attachment devices and methods for light emitting devices
CN102620180A (en) * 2011-01-26 2012-08-01 杨然森 LED (Light-Emitting diode) multi-chip module and manufacturing method thereof
CN102620180B (en) * 2011-01-26 2014-08-20 杨然森 LED (Light-Emitting diode) multi-chip module and manufacturing method thereof
US9194567B2 (en) 2011-02-16 2015-11-24 Cree, Inc. High voltage array light emitting diode (LED) devices and fixtures
CN102347297B (en) * 2011-09-30 2013-05-08 常熟市广大电器有限公司 Packaging structure for a plurality of small-size chips
CN102347297A (en) * 2011-09-30 2012-02-08 常熟市广大电器有限公司 Packaging structure for a plurality of small-size chips
CN102324453A (en) * 2011-09-30 2012-01-18 深圳市灏天光电有限公司 High-power LED (Light Emitting Diode) packaging process of double-layer lens
CN104081112A (en) * 2011-11-07 2014-10-01 克利公司 High voltage array light emitting diode (LED) devices, fixtures and methods
CN104081112B (en) * 2011-11-07 2016-03-16 克利公司 High voltage array light-emitting diode (LED) device, equipment and method
CN102410483A (en) * 2011-11-14 2012-04-11 黎昌兴 LED light source suitable for lighting lamp of vehicles and boats
US10043960B2 (en) 2011-11-15 2018-08-07 Cree, Inc. Light emitting diode (LED) packages and related methods
US10134961B2 (en) 2012-03-30 2018-11-20 Cree, Inc. Submount based surface mount device (SMD) light emitter components and methods
CN104051598A (en) * 2013-03-12 2014-09-17 安徽湛蓝光电科技有限公司 LED packaging method of steel-mesh-type silkscreen fluorescent glue
CN103759225A (en) * 2013-12-09 2014-04-30 广东雪莱特光电科技股份有限公司 Optical reflector and LED (Light-Emitting Diode) luminous element
CN103956358A (en) * 2014-05-08 2014-07-30 中国科学院半导体研究所 Heat dissipation structure and heat dissipation method of LED module
CN103972222A (en) * 2014-06-03 2014-08-06 宁波升谱光电半导体有限公司 LED (light-emitting diode) light source packaging method, LED light source packaging structure and light source module
US9379292B2 (en) 2014-06-03 2016-06-28 Ningbo Sunpu Led Co., Ltd. LED light source packaging method, LED light source package structure and light source module
CN105127050A (en) * 2015-07-22 2015-12-09 宁波百立光电有限公司 Sealant pouring process for waterproof lamp strips
CN105127050B (en) * 2015-07-22 2019-01-18 宁波百立光电有限公司 A kind of encapsulating adhesive process of water proof lamp band
USD823492S1 (en) 2016-10-04 2018-07-17 Cree, Inc. Light emitting device
CN107425096A (en) * 2017-07-21 2017-12-01 中山市华南理工大学现代产业技术研究院 A kind of long-range coating phosphor sheet and preparation method thereof
CN107452854A (en) * 2017-08-16 2017-12-08 芜湖晶鑫光电照明有限公司 A kind of LED production technology

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Application publication date: 20101103