KR101752426B1 - Light emitting device and light emitting diode package - Google Patents
Light emitting device and light emitting diode package Download PDFInfo
- Publication number
- KR101752426B1 KR101752426B1 KR1020100122994A KR20100122994A KR101752426B1 KR 101752426 B1 KR101752426 B1 KR 101752426B1 KR 1020100122994 A KR1020100122994 A KR 1020100122994A KR 20100122994 A KR20100122994 A KR 20100122994A KR 101752426 B1 KR101752426 B1 KR 101752426B1
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- South Korea
- Prior art keywords
- light emitting
- emitting diode
- light
- diode chip
- plate
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
Abstract
Here, a light emitting element is disclosed. The light emitting device includes a light emitting diode chip and a translucent fluorescent plate disposed on the light emitting diode chip, wherein the translucent fluorescent plate includes a translucent plate having a lower refractive index than the light emitting diode chip and a phosphor provided on the translucent plate do. In this case, the translucent fluorescent plate has a phosphor layer including the phosphor formed on the opposite side of the light emitting diode chip with respect to the light transmitting plate.
Description
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device and a light emitting diode package including the light emitting device, and more particularly, to a light emitting device and a light emitting diode package using a high refractive index light transmitting fluorescent plate.
Generally, a light emitting diode package includes a package body or substrate formed with lead frames or electrode terminals, and a light emitting diode chip mounted on such a package body or substrate. The light emitting diode chip is electrically connected to lead frames or electrode terminals to emit light. Various types of phosphors are used for wavelength conversion of light generated from a light emitting diode chip. BACKGROUND ART [0002] With the progress of nitride-based blue light emitting diode chip technology, a white light emitting device technology which realizes white light by using a blue light emitting diode chip and its corresponding phosphor has been rapidly developed.
A conventional light emitting diode package forms an encapsulant that encapsulates a light emitting diode chip with a mixture obtained by mixing, for example, a yellow, red or green phosphor with a light transmitting resin such as an epoxy resin or a silicone resin. As a result, although the phosphor is widely dispersed in the sealing material, it is difficult to uniformly disperse the phosphor in the sealing material.
Silicone resins have good light transmittance and high heat resistance, and are preferred as encapsulating materials for light emitting diode packages. However, the refractive index of the silicon encapsulant, which is as low as approximately 1.4 to 1.5, has hindered the enhancement of the luminous efficiency of the light emitting diode package. That is, a large refractive index difference between the encapsulant and the light emitting diode chip increases the total internal reflection at the surface of the LED chip, thereby lowering the light extraction efficiency. Therefore, in order to increase the light extraction efficiency, it is necessary to increase the light extraction angle on the surface of the light emitting diode chip.
Further, it is difficult to control the dispersion degree of the phosphor in the resin while the liquid or gel resin mixed with the phosphor is cured to form the sealing material, and to prevent unwanted precipitation of the phosphor. The light emitting diode package product thus manufactured has a disadvantage in that the luminance of emitted light is irregular.
Accordingly, it is an object of the present invention to provide a light emitting device and a light emitting diode package which increase light extraction angle on the surface of a light emitting diode chip to enhance light efficiency, exhibit high color reproduction and excellent color uniformity.
A light emitting diode package according to one aspect of the present invention includes a light emitting diode chip, a translucent fluorescent plate disposed on the light emitting diode chip, and a translucent encapsulant for encapsulating the light emitting diode chip and the translucent fluorescent plate, The translucent fluorescent plate includes a translucent plate having a refractive index smaller than that of the light emitting diode chip and having a refractive index higher than that of the encapsulant.
Preferably, the translucent fluorescent plate includes a phosphor layer on the opposite side of the light emitting diode chip with respect to the light transmitting plate. More preferably, the translucent fluorescent plate includes a laminated structure in which an AR coating layer is interposed between the translucent plate and the phosphor layer. Still more preferably, the translucent fluorescent plate has a continuous laminated structure in the order of the translucent plate, the AR coating layer, and the phosphor layer.
According to one embodiment, the transmissive fluorescent plate includes an adhesive interposed between the light transmissive plate and the LED chip, and the adhesive includes a filler for adjusting the refractive index. The filler preferably has a nano-size.
According to an embodiment, the transmissive fluorescent plate has a larger area than the upper surface of the light emitting diode chip so as to perform wavelength conversion of light emitted from the side surface of the light emitting diode chip.
According to an alternative embodiment, the transmissive fluorescent plate includes a side cover portion facing a side surface of the light emitting diode chip, for wavelength-converting the light emitted from the side surface of the light emitting diode chip.
According to one embodiment, the light emitting diode chip is a flip chip type light emitting diode chip in which light is emitted through a light transmitting growth substrate on which semiconductor layers are grown, and the light transmitting fluorescent plate includes a light transmitting plate disposed on the growth substrate And the refractive index of the light transmitting plate is smaller than the refractive index of the growth substrate and larger than the refractive index of the sealing material.
According to another embodiment, the light emitting diode chip includes a semiconductor laminate composed of semiconductor layers and a transparent electrode layer formed on an uppermost surface of the semiconductor laminate, wherein the transparent luminescent plate includes a transparent plate disposed on the transparent electrode layer And the light transmitting plate is smaller than the refractive index of the transparent electrode layer and larger than the refractive index of the sealing material.
According to another embodiment, the light emitting diode chip may include a semiconductor laminate including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, and the light transmitting plate may include an uppermost semiconductor layer And the refractive index of the transmissive plate is smaller than the refractive index of the uppermost semiconductor layer and larger than the refractive index of the encapsulant.
According to one embodiment, the light emitting diode chip includes two or more electrode pads having different polarities on the upper portion, and the light transmitting fluorescent plate includes through holes into which the electrode pads are inserted.
According to another embodiment, the light emitting diode chip includes at least one electrode pad having one polarity at the upper portion, and the transmissive fluorescent plate includes a through hole into which the electrode pads are inserted.
Preferably, the light transmissive plate includes a lamination structure of light transmissive materials in which the refractive index gradually decreases in a direction away from the light emitting diode chip.
According to another aspect of the present invention, there is provided a light emitting device including a light emitting diode chip and a translucent fluorescent plate disposed on the light emitting diode chip, wherein the translucent fluorescent plate has a light transmitting property with a refractive index smaller than that of the light emitting diode chip And a phosphor provided on the translucent plate.
According to one embodiment, the light emitting diode chip is a flip chip type light emitting diode chip in which light is emitted through a light transmitting growth substrate on which semiconductor layers are grown, and the light transmitting fluorescent plate includes a light transmitting plate disposed on the growth substrate And the refractive index of the light transmitting plate is smaller than the refractive index of the growth substrate.
According to another embodiment, the light emitting diode chip includes a semiconductor laminate composed of semiconductor layers and a transparent electrode layer formed on an uppermost surface of the semiconductor laminate, wherein the transparent luminescent plate includes a transparent plate disposed on the transparent electrode layer And the transmissive plate is smaller than the refractive index of the transparent electrode layer.
According to another embodiment, the light emitting diode chip may include a semiconductor laminate including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, and the light transmitting plate may include an uppermost semiconductor layer And the refractive index of the transmissive plate is smaller than the refractive index of the uppermost semiconductor layer.
According to one embodiment, the light transmitting plate is made of at least one ceramic material selected from the group consisting of Y 2 O 3 , BaO, AlN, MgO, CaO, SrO, CaF 2 , Al 2 O 3 , ZrO 3 and lanthanide series ceramics All.
According to one embodiment, the light transmitting plate may include a ceramic sintered body, and more preferably, the phosphor layer is formed by sintering the phosphor on the AR coating layer on or above the light transmitting plate. Alternatively, the phosphor layer may be formed by applying a translucent resin containing a phosphor onto the AR coating layer on or above the translucent plate,
According to the present invention, the luminous efficiency can be increased by the structure in which the translucent fluorescent plate having a refractive index larger than that of the encapsulant is disposed on the main surface of the LED chip, and the phosphor is formed by controlling the translucent fluorescent plate to the desired dispersion, And a light emitting diode package having excellent color uniformity can be realized.
Other objects and advantages of the present invention will become more apparent from the following description of embodiments thereof.
1 is a cross-sectional view illustrating a light emitting diode package according to an embodiment of the present invention,
FIG. 2 is a cross-sectional view showing various modifications of the light emitting device applicable to the light emitting diode package shown in FIG. 1. FIG.
3 (a) and 3 (b) are a cross-sectional view and a plan view showing a light emitting device including a flip chip type light emitting diode chip according to an embodiment of the present invention
4 (a) and 4 (b) are a cross-sectional view and a plan view showing a light emitting device including a light emitting diode chip of a lateral structure according to another embodiment of the present invention.
5A and 5B are a cross-sectional view and a plan view showing a light emitting device including a vertical-type light emitting diode chip according to another embodiment of the present invention.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided by way of example so that those skilled in the art can fully understand the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the width, length, thickness, and the like of the components may be exaggerated for convenience. Like reference numerals designate like elements throughout the specification.
1 is a cross-sectional view illustrating a light emitting diode package according to an embodiment of the present invention.
1, the light emitting diode package 1 according to the present embodiment includes a
The
The light
In particular, the
In this embodiment, the
The adjustment of CCT and color coordinates can be controlled by the thickness of the
The
The
As a material of the
[Production of a ceramic light transmitting plate]
The Y 2 O 3 ceramic powder was quantitatively determined to have a purity of 99.9%. The powder was placed in a mold, uniaxially pressed at a pressure of 50 MPa, and then subjected to hydrostatic pressing (CIP) at a pressure of 140 MPa to prepare a light transmitting plate. Then calcined at 1200 ° C for 2 hours. After that, the transparent plate is made into a desired shape, height and size by using a metal press.
In the case of light-transmitting plate molding by powder pressing, a molded article is formed in a desired diameter, height and shape and sintered at a temperature of 1300 ° C or higher to complete a light-transmitting plate.
Ceramic materials such as lanthanide series (Gd 2 O 3 and Ln 2 O 3 ) ceramic materials or BaO, AlN, MgO, CaO, SrO, CaF 2 , Al 2 O 3 and ZrO 2 in addition to Y 2 O 3 , It is used to make plates. The translucent plate fabricated as above can be used alone, but it can be laminated with a translucent plate material having a different index of refraction to form a translucent plate with a laminated structure of plastics.
[Formation of phosphor layer]
The phosphor layer can be formed using, for example, the following three methods. The phosphor layer can be formed directly on a translucent plate made of a sintered body such as Y 2 O 3 as described above, and formed on the translucent plate after forming the AR coating layer thereon.
(1) A Y 3 AlO 12 : Ce 3+ phosphor (silicate system, nitrite system, etc.) synthesized by various methods such as a solid phase method or a liquid phase method is put in a suitable ratio on a light- Sintered at high temperature above 1000 ℃.
(2) The phosphors are mixed with a liquid or gel-like silicone resin, spin-coated on a ceramic plate, and the silicone resin is cured.
(3) The phosphors are coated by a spray method together with a low viscosity silicon or liquid solution.
FIG. 2 is a cross-sectional view showing various types of light emitting devices that can be applied to the light emitting diode package shown in FIG. 1. FIG. Fig. 2 is provided for explaining various applicable forms of the translucent fluorescent plate, and thus the structure and the shape of the light emitting diode chip are shown as being generalized. It is noted that the light emitting diode chips of the light emitting device shown in FIG. 2 may be a vertical structure, a lateral structure, a flip chip structure, or the like.
2 (a), a
Referring to FIG. 2 (b), it can be seen that the upper surface of the
2 (c), it can be said that the light-transmitting
2 (d) and 2 (e) show a form in which the
2 (d) shows the
Various types of translucent fluorescent plates may be used depending on the structure of the LED chip, and FIGS. 3, 4 and 5 show light emitting devices of various embodiments according to the LED chip structure.
Referring to FIG. 3, a
The light emitting
Referring to FIG. 4, a
The light emitting
Referring to FIG. 5, a
The light emitting
10: package body 20: light emitting element
22: light emitting diode chip 24: translucent fluorescent plate
242: light transmitting plate 244: AR coating layer
246: phosphor layer 30: sealing material
Claims (30)
A translucent fluorescent plate disposed on the light emitting diode chip; And
And a light-transmitting encapsulant for encapsulating the light-emitting diode chip and the transmissive fluorescent plate,
Wherein the translucent fluorescent plate includes a translucent plate having a refractive index smaller than that of the light emitting diode chip and having a refractive index higher than that of the encapsulant, and an adhesive interposed between the translucent plate and the LED chip,
Wherein the adhesive includes a filler for adjusting the refractive index.
And a translucent fluorescent plate disposed on the light emitting diode chip,
Wherein the translucent fluorescent plate includes a translucent plate having a refractive index smaller than that of the light emitting diode chip, a phosphor provided on the translucent plate, and an adhesive interposed between the translucent plate and the LED chip,
Wherein the adhesive includes a filler for adjusting the refractive index.
Priority Applications (1)
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KR1020100122994A KR101752426B1 (en) | 2010-12-03 | 2010-12-03 | Light emitting device and light emitting diode package |
Applications Claiming Priority (1)
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KR1020100122994A KR101752426B1 (en) | 2010-12-03 | 2010-12-03 | Light emitting device and light emitting diode package |
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KR20120061626A KR20120061626A (en) | 2012-06-13 |
KR101752426B1 true KR101752426B1 (en) | 2017-07-11 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101982522B1 (en) * | 2012-09-26 | 2019-05-27 | 엘지이노텍 주식회사 | Lighting unit and method thereof |
KR101466610B1 (en) * | 2013-06-10 | 2014-12-01 | 한국화학연구원 | Led lamp using uv led chip, and ultraviolet generation having the same |
KR20170043839A (en) * | 2015-10-14 | 2017-04-24 | (주)라이타이저코리아 | Package for Light Emitting Device and Method for Manufacturing thereof |
KR20170045851A (en) * | 2015-10-20 | 2017-04-28 | (주)라이타이저코리아 | Package for Light Emitting Device and Method for Manufacturing thereof |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008159708A (en) * | 2006-12-21 | 2008-07-10 | Matsushita Electric Works Ltd | Light-emitting device |
JP2008166740A (en) * | 2006-11-28 | 2008-07-17 | Cree Inc | Optical preforming of solid-state light-emitting die, manufacturing method therefor, assembly method, and system |
WO2010082286A1 (en) * | 2009-01-13 | 2010-07-22 | 株式会社小糸製作所 | Light emitting module and lighting fixture unit |
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- 2010-12-03 KR KR1020100122994A patent/KR101752426B1/en active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008166740A (en) * | 2006-11-28 | 2008-07-17 | Cree Inc | Optical preforming of solid-state light-emitting die, manufacturing method therefor, assembly method, and system |
JP2008159708A (en) * | 2006-12-21 | 2008-07-10 | Matsushita Electric Works Ltd | Light-emitting device |
WO2010082286A1 (en) * | 2009-01-13 | 2010-07-22 | 株式会社小糸製作所 | Light emitting module and lighting fixture unit |
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