KR101752426B1 - Light emitting device and light emitting diode package - Google Patents

Light emitting device and light emitting diode package Download PDF

Info

Publication number
KR101752426B1
KR101752426B1 KR1020100122994A KR20100122994A KR101752426B1 KR 101752426 B1 KR101752426 B1 KR 101752426B1 KR 1020100122994 A KR1020100122994 A KR 1020100122994A KR 20100122994 A KR20100122994 A KR 20100122994A KR 101752426 B1 KR101752426 B1 KR 101752426B1
Authority
KR
South Korea
Prior art keywords
light emitting
emitting diode
light
diode chip
plate
Prior art date
Application number
KR1020100122994A
Other languages
Korean (ko)
Other versions
KR20120061626A (en
Inventor
배윤정
이종국
이태호
김효정
남현욱
Original Assignee
서울반도체 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 서울반도체 주식회사 filed Critical 서울반도체 주식회사
Priority to KR1020100122994A priority Critical patent/KR101752426B1/en
Publication of KR20120061626A publication Critical patent/KR20120061626A/en
Application granted granted Critical
Publication of KR101752426B1 publication Critical patent/KR101752426B1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)

Abstract

Here, a light emitting element is disclosed. The light emitting device includes a light emitting diode chip and a translucent fluorescent plate disposed on the light emitting diode chip, wherein the translucent fluorescent plate includes a translucent plate having a lower refractive index than the light emitting diode chip and a phosphor provided on the translucent plate do. In this case, the translucent fluorescent plate has a phosphor layer including the phosphor formed on the opposite side of the light emitting diode chip with respect to the light transmitting plate.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a light emitting diode (LED)

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device and a light emitting diode package including the light emitting device, and more particularly, to a light emitting device and a light emitting diode package using a high refractive index light transmitting fluorescent plate.

Generally, a light emitting diode package includes a package body or substrate formed with lead frames or electrode terminals, and a light emitting diode chip mounted on such a package body or substrate. The light emitting diode chip is electrically connected to lead frames or electrode terminals to emit light. Various types of phosphors are used for wavelength conversion of light generated from a light emitting diode chip. BACKGROUND ART [0002] With the progress of nitride-based blue light emitting diode chip technology, a white light emitting device technology which realizes white light by using a blue light emitting diode chip and its corresponding phosphor has been rapidly developed.

A conventional light emitting diode package forms an encapsulant that encapsulates a light emitting diode chip with a mixture obtained by mixing, for example, a yellow, red or green phosphor with a light transmitting resin such as an epoxy resin or a silicone resin. As a result, although the phosphor is widely dispersed in the sealing material, it is difficult to uniformly disperse the phosphor in the sealing material.

Silicone resins have good light transmittance and high heat resistance, and are preferred as encapsulating materials for light emitting diode packages. However, the refractive index of the silicon encapsulant, which is as low as approximately 1.4 to 1.5, has hindered the enhancement of the luminous efficiency of the light emitting diode package. That is, a large refractive index difference between the encapsulant and the light emitting diode chip increases the total internal reflection at the surface of the LED chip, thereby lowering the light extraction efficiency. Therefore, in order to increase the light extraction efficiency, it is necessary to increase the light extraction angle on the surface of the light emitting diode chip.

Further, it is difficult to control the dispersion degree of the phosphor in the resin while the liquid or gel resin mixed with the phosphor is cured to form the sealing material, and to prevent unwanted precipitation of the phosphor. The light emitting diode package product thus manufactured has a disadvantage in that the luminance of emitted light is irregular.

Accordingly, it is an object of the present invention to provide a light emitting device and a light emitting diode package which increase light extraction angle on the surface of a light emitting diode chip to enhance light efficiency, exhibit high color reproduction and excellent color uniformity.

A light emitting diode package according to one aspect of the present invention includes a light emitting diode chip, a translucent fluorescent plate disposed on the light emitting diode chip, and a translucent encapsulant for encapsulating the light emitting diode chip and the translucent fluorescent plate, The translucent fluorescent plate includes a translucent plate having a refractive index smaller than that of the light emitting diode chip and having a refractive index higher than that of the encapsulant.

Preferably, the translucent fluorescent plate includes a phosphor layer on the opposite side of the light emitting diode chip with respect to the light transmitting plate. More preferably, the translucent fluorescent plate includes a laminated structure in which an AR coating layer is interposed between the translucent plate and the phosphor layer. Still more preferably, the translucent fluorescent plate has a continuous laminated structure in the order of the translucent plate, the AR coating layer, and the phosphor layer.

According to one embodiment, the transmissive fluorescent plate includes an adhesive interposed between the light transmissive plate and the LED chip, and the adhesive includes a filler for adjusting the refractive index. The filler preferably has a nano-size.

According to an embodiment, the transmissive fluorescent plate has a larger area than the upper surface of the light emitting diode chip so as to perform wavelength conversion of light emitted from the side surface of the light emitting diode chip.

According to an alternative embodiment, the transmissive fluorescent plate includes a side cover portion facing a side surface of the light emitting diode chip, for wavelength-converting the light emitted from the side surface of the light emitting diode chip.

According to one embodiment, the light emitting diode chip is a flip chip type light emitting diode chip in which light is emitted through a light transmitting growth substrate on which semiconductor layers are grown, and the light transmitting fluorescent plate includes a light transmitting plate disposed on the growth substrate And the refractive index of the light transmitting plate is smaller than the refractive index of the growth substrate and larger than the refractive index of the sealing material.

According to another embodiment, the light emitting diode chip includes a semiconductor laminate composed of semiconductor layers and a transparent electrode layer formed on an uppermost surface of the semiconductor laminate, wherein the transparent luminescent plate includes a transparent plate disposed on the transparent electrode layer And the light transmitting plate is smaller than the refractive index of the transparent electrode layer and larger than the refractive index of the sealing material.

According to another embodiment, the light emitting diode chip may include a semiconductor laminate including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, and the light transmitting plate may include an uppermost semiconductor layer And the refractive index of the transmissive plate is smaller than the refractive index of the uppermost semiconductor layer and larger than the refractive index of the encapsulant.

According to one embodiment, the light emitting diode chip includes two or more electrode pads having different polarities on the upper portion, and the light transmitting fluorescent plate includes through holes into which the electrode pads are inserted.

According to another embodiment, the light emitting diode chip includes at least one electrode pad having one polarity at the upper portion, and the transmissive fluorescent plate includes a through hole into which the electrode pads are inserted.

Preferably, the light transmissive plate includes a lamination structure of light transmissive materials in which the refractive index gradually decreases in a direction away from the light emitting diode chip.

According to another aspect of the present invention, there is provided a light emitting device including a light emitting diode chip and a translucent fluorescent plate disposed on the light emitting diode chip, wherein the translucent fluorescent plate has a light transmitting property with a refractive index smaller than that of the light emitting diode chip And a phosphor provided on the translucent plate.

According to one embodiment, the light emitting diode chip is a flip chip type light emitting diode chip in which light is emitted through a light transmitting growth substrate on which semiconductor layers are grown, and the light transmitting fluorescent plate includes a light transmitting plate disposed on the growth substrate And the refractive index of the light transmitting plate is smaller than the refractive index of the growth substrate.

According to another embodiment, the light emitting diode chip includes a semiconductor laminate composed of semiconductor layers and a transparent electrode layer formed on an uppermost surface of the semiconductor laminate, wherein the transparent luminescent plate includes a transparent plate disposed on the transparent electrode layer And the transmissive plate is smaller than the refractive index of the transparent electrode layer.

According to another embodiment, the light emitting diode chip may include a semiconductor laminate including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, and the light transmitting plate may include an uppermost semiconductor layer And the refractive index of the transmissive plate is smaller than the refractive index of the uppermost semiconductor layer.

According to one embodiment, the light transmitting plate is made of at least one ceramic material selected from the group consisting of Y 2 O 3 , BaO, AlN, MgO, CaO, SrO, CaF 2 , Al 2 O 3 , ZrO 3 and lanthanide series ceramics All.

According to one embodiment, the light transmitting plate may include a ceramic sintered body, and more preferably, the phosphor layer is formed by sintering the phosphor on the AR coating layer on or above the light transmitting plate. Alternatively, the phosphor layer may be formed by applying a translucent resin containing a phosphor onto the AR coating layer on or above the translucent plate,

According to the present invention, the luminous efficiency can be increased by the structure in which the translucent fluorescent plate having a refractive index larger than that of the encapsulant is disposed on the main surface of the LED chip, and the phosphor is formed by controlling the translucent fluorescent plate to the desired dispersion, And a light emitting diode package having excellent color uniformity can be realized.

Other objects and advantages of the present invention will become more apparent from the following description of embodiments thereof.

1 is a cross-sectional view illustrating a light emitting diode package according to an embodiment of the present invention,
FIG. 2 is a cross-sectional view showing various modifications of the light emitting device applicable to the light emitting diode package shown in FIG. 1. FIG.
3 (a) and 3 (b) are a cross-sectional view and a plan view showing a light emitting device including a flip chip type light emitting diode chip according to an embodiment of the present invention
4 (a) and 4 (b) are a cross-sectional view and a plan view showing a light emitting device including a light emitting diode chip of a lateral structure according to another embodiment of the present invention.
5A and 5B are a cross-sectional view and a plan view showing a light emitting device including a vertical-type light emitting diode chip according to another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided by way of example so that those skilled in the art can fully understand the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the width, length, thickness, and the like of the components may be exaggerated for convenience. Like reference numerals designate like elements throughout the specification.

1 is a cross-sectional view illustrating a light emitting diode package according to an embodiment of the present invention.

1, the light emitting diode package 1 according to the present embodiment includes a package body 10, a light emitting device 20 mounted on the package body 10, And a transparent encapsulant 30 for encapsulating the encapsulant. The package body 10 is provided with lead terminals 12a and 12b electrically connected to the light emitting device 20 and electrically connected to the lead terminals 12a and 12b and the light emitting device 20 A bonding wire W may be used. The package body 10 includes a cavity 11 for receiving the light emitting device 20 and the encapsulation material 30 is attached to the cavity 11 to protect the light emitting device 20 . In the present embodiment, the encapsulant 30 is formed of a silicone resin having a refractive index of approximately 1.4 to 1.5, but may be formed of a light-transmissive resin such as an epoxy resin or the like. It should be noted that other materials such as a ceramic substrate may be used for the package body 10.

The light emitting device 20 includes a nitride based light emitting diode chip 22 and a translucent fluorescent plate 24 disposed on the light emitting diode chip 22. The transmissive fluorescent plate 24 includes a transmissive plate 242 of a high refractive index ceramic material attached to the light emitting diode chip 22 by an adhesive material 23, And an AR coating layer 244 and a phosphor layer 246 opposite to the light emitting diode chip 22. The transmissive fluorescent plate 24 covers the entire upper surface of the light emitting diode chip 22 in a larger area than the upper surface of the light emitting diode chip 22. This means that part or all of the light path from the side surface of the light emitting diode chip 22 As shown in Fig.

The light transmissive plate 242 is made of a ceramic material having a refractive index larger than that of the encapsulant 30 so that the total internal reflection of the surface of the light emitting diode chip 22 having a refractive index larger than that of the encapsulant 30 is reduced, Increase. The refractive index of the light-transmissive plate 242 may depend on the refractive index of the uppermost layer of the light-emitting diode chip 22, but is preferably approximately 1.8.

In particular, the translucent plate 242 made of a ceramic material has high chemical stability, visible light transmittance and heat resistance, and is suitable for holding the phosphor layer 246 for wavelength-converting the light of the light emitting diode chip 22. As shown in the figure, the translucent fluorescent plate 24 includes a transparent laminate structure 242, a AR coating layer 244, and a phosphor layer 246 in the order of the translucent plate 242, the AR coating layer 244, and the phosphor layer 246 in a direction away from the LED chip 22 . The phosphor layer 246 may be formed by spin coating or spraying the phosphor, or alternatively, a film or sheet containing a phosphor may be formed on the light transmitting plate 242.

In this embodiment, the phosphor layer 246 is formed on the AR coating layer 244 previously provided on the translucent plate 242 made of a ceramic material, but it may be formed directly on the translucent plate 242.

The adjustment of CCT and color coordinates can be controlled by the thickness of the phosphor layer 246 or the amount of phosphor. As the adhesive material 23 for attaching the translucent fluorescent plate 24 to the light emitting diode 22, a polymeric material adhesive having a high refractive index such as acrylic resin may be used, and the refractive index of the material of the translucent plate 242 , An adhesive containing a filler for adjusting the refractive index, more preferably a nanofiller, may be used. Silicone-based adhesives are preferred as adhesives including fillers.

The AR coating layer 244 is additionally provided for better light efficiency and includes a relatively high refractive index (1.65) CeF 3 layer 244a and a relatively low refractive index (about 1.38) MgF 2 layer 244b. As shown in Fig. Although AR coating layer 244 having a laminated structure of MgF 2 layer 244a and CeF 3 layer 244b has been introduced according to the preferred embodiment, various other kinds of AR coating layers can be used, and further AR It is also conceivable to omit the coating layer. In this case, the phosphor layer 246 will be formed directly on the light-transmitting plate 242 as mentioned above.

The translucent plate 242 may have a single-layer structure, but is preferably a multi-layer laminate structure. In the case of a multi-layered laminated structure, the materials of the respective layers are selected such that the refractive index gradually decreases in a direction away from the light emitting diode chip 22.

As a material of the light transmitting plate 242, a ceramic material is preferred as mentioned above, and an example of a method of manufacturing a light transmitting fluorescent plate including a process of manufacturing a light transmitting plate 242 of a ceramic material and a process of forming a phosphor layer 246 As follows.

[Production of a ceramic light transmitting plate]

The Y 2 O 3 ceramic powder was quantitatively determined to have a purity of 99.9%. The powder was placed in a mold, uniaxially pressed at a pressure of 50 MPa, and then subjected to hydrostatic pressing (CIP) at a pressure of 140 MPa to prepare a light transmitting plate. Then calcined at 1200 ° C for 2 hours. After that, the transparent plate is made into a desired shape, height and size by using a metal press.

In the case of light-transmitting plate molding by powder pressing, a molded article is formed in a desired diameter, height and shape and sintered at a temperature of 1300 ° C or higher to complete a light-transmitting plate.

Ceramic materials such as lanthanide series (Gd 2 O 3 and Ln 2 O 3 ) ceramic materials or BaO, AlN, MgO, CaO, SrO, CaF 2 , Al 2 O 3 and ZrO 2 in addition to Y 2 O 3 , It is used to make plates. The translucent plate fabricated as above can be used alone, but it can be laminated with a translucent plate material having a different index of refraction to form a translucent plate with a laminated structure of plastics.

[Formation of phosphor layer]

The phosphor layer can be formed using, for example, the following three methods. The phosphor layer can be formed directly on a translucent plate made of a sintered body such as Y 2 O 3 as described above, and formed on the translucent plate after forming the AR coating layer thereon.

(1) A Y 3 AlO 12 : Ce 3+ phosphor (silicate system, nitrite system, etc.) synthesized by various methods such as a solid phase method or a liquid phase method is put in a suitable ratio on a light- Sintered at high temperature above 1000 ℃.

(2) The phosphors are mixed with a liquid or gel-like silicone resin, spin-coated on a ceramic plate, and the silicone resin is cured.

(3) The phosphors are coated by a spray method together with a low viscosity silicon or liquid solution.

FIG. 2 is a cross-sectional view showing various types of light emitting devices that can be applied to the light emitting diode package shown in FIG. 1. FIG. Fig. 2 is provided for explaining various applicable forms of the translucent fluorescent plate, and thus the structure and the shape of the light emitting diode chip are shown as being generalized. It is noted that the light emitting diode chips of the light emitting device shown in FIG. 2 may be a vertical structure, a lateral structure, a flip chip structure, or the like.

2 (a), a translucent fluorescent plate 24 having a flat upper surface and a flat surface is attached to the upper surface of the light emitting diode chip 22 by an adhesive 23. The translucent plate 242 in the translucent fluorescent plate 24 has a flat plate structure, and the AR coating layer 244 and the fluorescent coating layer 246 laminated thereon also have flat upper and lower surfaces.

Referring to FIG. 2 (b), it can be seen that the upper surface of the translucent fluorescent plate 24 has a curved surface of a lens shape due to the shape of the fluorescent layer 246. The remaining structure and / or shape of the translucent fluorescent plate 24 and the manner of attaching the translucent fluorescent plate 24 to the upper surface of the light emitting diode chip 22 are the same as those shown in FIG.

2 (c), it can be said that the light-transmitting plate 242, which is the base of the transmissive fluorescent plate 24, has a lens-shaped upper surface. When a translucent plate is made of ceramics, the ceramic translucent sheet 242 may be formed into a desired shape and then sintered in a mold so as to have a shape shown in FIG. 2 (c) or other desired shapes. The AR coating layer 244 and the phosphor layer 246 are formed on the upper surface of the plate 242 to have a uniform thickness so that the transmissive fluorescent plate 24 has a generally lens-shaped upper surface.

2 (d) and 2 (e) show a form in which the transmissive fluorescent plate 24 is sandwiched by the light emitting diode chip 22. In this configuration, the translucent fluorescent plate 24 is advantageous for wavelength conversion of the light emitted from the side surface of the light emitting diode chip 22 by the side cover portion 24c facing the side surface of the light emitting diode chip 22 . In addition, since the transmissive fluorescent plate 24 is sandwiched between the light emitting diode chips 22 by the side cover portion 24c, the adhesive interposed between the light emitting diode chips 22 can be omitted, The plate 24, in particular, the light-transmissive plate 242 can directly contact the upper surface and the side surface of the light-emitting diode chip 22. At this time, in order to prevent air having a low refractive index from intervening in the gap between the transmissive fluorescent plate 24 and the LED chip 22, the refractive index of the transparent plate 242 is preferably high, The cross-sectional gel can be filled in the gap.

2 (d) shows the light emitting device 20 in which the translucent fluorescent plate 24 covers almost all the light emitting surface including the side surface and the upper surface of the light emitting diode chip 22, and FIG. 2 (e Shows a light emitting element 20 in which the translucent fluorescent plate 24 covers a part of the side surface and the entire upper surface of the light emitting diode chip 22.

Various types of translucent fluorescent plates may be used depending on the structure of the LED chip, and FIGS. 3, 4 and 5 show light emitting devices of various embodiments according to the LED chip structure.

Referring to FIG. 3, a light emitting device 20 including a light emitting diode chip 22 of a flip chip structure can be seen.

The light emitting diode chip 22 of the flip chip structure has a first conductive type compound semiconductor layer 222, an active layer 223 and a second conductive type compound semiconductor layer 224 on the front surface of a transparent substrate 221 such as a sapphire substrate And a structure in which the second conductive type semiconductor layer 224 and the active layer 223 are removed regionally and the first conductive type semiconductor layer 222 is exposed. The light emitting diode chip 22 is mounted in the opposite direction to the direction in which the semiconductor layers are grown. The light emitting diode chip 22 is mounted on the reflective electrode of the first conductive compound semiconductor layer 222 and the second conductive compound semiconductor layer 224 Each of the reflective electrodes is connected to the opposing electrodes of the submount or package body by the corresponding metal bumps 227. Therefore, when the back surface of the growth substrate 221 becomes the upper surface of the light-emitting diode chip 22 where light is mainly emitted, the transmissive fluorescent plate 24 is disposed on the back surface of the growth substrate 221. The translucent fluorescent plate 24 includes a translucent plate 242, an AR coating layer 244 and a phosphor layer 246 having a high refractive index in a direction away from the light emitting diode chip 22 as described above.

Referring to FIG. 4, a light emitting device 20 including a light emitting diode chip 22 of a lateral structure can be seen.

The light emitting diode chip 22 of the lateral structure has a first conductive type compound semiconductor layer 222, an active layer 223 and a second conductive type compound semiconductor layer 224 on the entire surface of a transparent growth substrate 221 such as a sapphire substrate And a structure in which the second conductive type semiconductor layer 224 and the active layer 223 are removed regionally and the first conductive type semiconductor layer 222 is exposed. A first conductive type electrode pad 225 is formed on the exposed surface of the first conductive semiconductor layer 222 and an ITO layer T is formed on the upper surface of the second conductive type compound semiconductor layer 224 as a transparent electrode layer And a second conductive electrode pad 226 is formed on the ITO layer (T). With this structure, the light emitting diode chip 22 has the electrode pads 225 and 226 protruded to the upper surface. The transmissive fluorescent plate 24 is formed on the upper surface of the LED chip 22 and has through holes 24a and 24b for allowing the upper surface of the electrode pads 225 and 226 to be exposed. The translucent fluorescent plate 24 includes a translucent plate 242, an AR coating layer 244 and a phosphor layer 246 having a high refractive index in a direction away from the light emitting diode chip 22 as described above. At this time, a material having a refractive index smaller than that of the ITO layer (T) is selected as the material of the light transmitting plate (242). In this embodiment, the transmissive fluorescent plate 24 has a structure in the form of a cap including a side cover portion 24c and is configured to be fitted on the upper portion of the LED chip 22. However, the transmissive fluorescent plate 24 May have a flat plate structure than the top surface area of the light emitting diode chip 22.

Referring to FIG. 5, a light emitting device 22 including a vertical-type light emitting diode chip 22 can be seen.

The light emitting diode chip 22 of the vertical structure has a structure in which a second conductive type compound semiconductor layer 224, an active layer 223 and a first conductive type compound semiconductor layer 222 are sequentially formed on a metal or ceramic supporting substrate 221 ' Lt; / RTI > A growth substrate such as a sapphire substrate used for growing the semiconductor layers is removed from the first conductive type compound semiconductor layer 222 or the buffer layer. When the growth substrate is removed, the supporting substrate 221 'is bonded to the second conductive type compound semiconductor layer 224 to support the semiconductor layers. In general, only the vertically-structured light emitting diode chip 22 is formed with only one polarity electrode pad, that is, the first conductive electrode pad 225 in this embodiment. The translucent fluorescent plate 24 includes a translucent plate 242, an AR coating layer 244 and a phosphor layer 246 having a high refractive index in a direction away from the light emitting diode chip 22. At this time, a material having a refractive index smaller than that of the first conductivity type semiconductor layer 225 is selected as the material of the light transmissive plate 242. In addition, the transmissive fluorescent plate 24 includes a through hole 24a allowing exposure of the first conductive type electrode pad.

10: package body 20: light emitting element
22: light emitting diode chip 24: translucent fluorescent plate
242: light transmitting plate 244: AR coating layer
246: phosphor layer 30: sealing material

Claims (30)

A light emitting diode chip;
A translucent fluorescent plate disposed on the light emitting diode chip; And
And a light-transmitting encapsulant for encapsulating the light-emitting diode chip and the transmissive fluorescent plate,
Wherein the translucent fluorescent plate includes a translucent plate having a refractive index smaller than that of the light emitting diode chip and having a refractive index higher than that of the encapsulant, and an adhesive interposed between the translucent plate and the LED chip,
Wherein the adhesive includes a filler for adjusting the refractive index. The light emitting diode package according to claim 1, wherein the translucent fluorescent plate includes a phosphor layer on the opposite side of the light emitting diode chip with respect to the light transmitting plate. The light emitting diode package according to claim 2, wherein the translucent fluorescent plate includes a laminated structure in which an AR coating layer is interposed between the translucent plate and the phosphor layer. [4] The light emitting diode package according to claim 3, wherein the translucent fluorescent plate has a continuous laminated structure in the order of the translucent plate, the AR coating layer, and the phosphor layer. delete The light emitting diode package according to claim 1, wherein the translucent fluorescent plate has an area larger than that of the upper surface of the light emitting diode chip. The light emitting diode package according to claim 1, wherein the transmissive fluorescent plate includes a side cover portion facing a side surface of the light emitting diode chip. The light emitting diode chip of claim 1, wherein the light emitting diode chip is a flip chip type light emitting diode chip in which light is emitted through a translucent growth substrate on which semiconductor layers are grown, and the translucent fluorescent plate includes a translucent plate disposed on the growth substrate Wherein the refractive index of the light transmitting plate is smaller than the refractive index of the growth substrate and is larger than the refractive index of the sealing material. The light emitting diode chip of claim 1, wherein the light emitting diode chip comprises a semiconductor laminate composed of semiconductor layers and a transparent electrode layer formed on an uppermost surface of the semiconductor laminate, wherein the translucent fluorescent plate includes a transparent plate disposed on the transparent electrode layer And the light transmitting plate is smaller than the refractive index of the transparent electrode layer and larger than the refractive index of the sealing material.  The light emitting diode chip according to claim 1, wherein the light emitting diode chip comprises a semiconductor laminate including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, and the light transmitting plate is disposed on the uppermost semiconductor layer of the semiconductor laminate Wherein the refractive index of the light-transmissive plate is smaller than the refractive index of the uppermost semiconductor layer and larger than the refractive index of the encapsulant. The light emitting diode package of claim 1, wherein the light emitting diode chip includes at least two electrode pads having different polarities on the upper portion, and the light transmitting fluorescent plate includes through holes through which the electrode pads are inserted. The light emitting diode package of claim 1, wherein the light emitting diode chip includes at least one electrode pad having one polarity on the upper portion, and the transmissive fluorescent plate includes a through hole into which the electrode pads are inserted. The light emitting device according to any one of claims 1 to 4, 6 to 12, wherein the light transmissive plate includes a laminate structure of light transmissive materials in which the refractive index gradually decreases in a direction away from the light emitting surface of the light emitting diode chip Diode package. A light emitting diode chip; And
And a translucent fluorescent plate disposed on the light emitting diode chip,
Wherein the translucent fluorescent plate includes a translucent plate having a refractive index smaller than that of the light emitting diode chip, a phosphor provided on the translucent plate, and an adhesive interposed between the translucent plate and the LED chip,
Wherein the adhesive includes a filler for adjusting the refractive index. 15. The light emitting device according to claim 14, wherein the translucent fluorescent plate is formed on the opposite side of the light emitting diode chip with respect to the light transmitting plate, the phosphor layer including the phosphor. 16. The light emitting device according to claim 15, wherein the translucent fluorescent plate includes a laminated structure in which an AR coating layer is interposed between the translucent plate and the phosphor layer. 17. The light emitting device according to claim 16, wherein the translucent fluorescent plate has a laminated structure in which the translucent plate, the AR coating layer and the phosphor layer are continuous in this order. delete 15. The light emitting device according to claim 14, wherein the translucent fluorescent plate has an area larger than an area of an upper surface of the light emitting diode chip so as to convert wavelength of light emitted from a side surface of the light emitting diode chip. 15. The light emitting device according to claim 14, wherein the transmissive fluorescent plate includes a side cover portion facing the side surface of the light emitting diode chip for wavelength conversion of the light emitted from the side surface of the light emitting diode chip. [14] The light emitting diode chip of claim 14, wherein the light emitting diode chip is a flip chip type light emitting diode chip in which light is emitted through a light transmitting growth substrate on which semiconductor layers are grown, and the light transmitting fluorescent plate includes a light transmitting plate disposed on the growth substrate , And the refractive index of the light-transmitting plate is smaller than the refractive index of the growth substrate. [14] The light emitting diode chip of claim 14, wherein the light emitting diode chip comprises a semiconductor laminate composed of semiconductor layers and a transparent electrode layer formed on an uppermost surface of the semiconductor laminate, wherein the transparent luminescent plate includes a transparent plate disposed on the transparent electrode layer And the light transmitting plate is smaller than the refractive index of the transparent electrode layer.  15. The semiconductor light emitting device according to claim 14, wherein the light emitting diode chip comprises a semiconductor laminate including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer, And the refractive index of the light-transmitting plate is smaller than the refractive index of the uppermost semiconductor layer. [14] The light emitting device of claim 14, wherein the light emitting diode chip includes at least two electrode pads having different polarities on the upper portion, and the transmissive fluorescent plate includes through holes into which the electrode pads are inserted. [16] The light emitting device of claim 14, wherein the light emitting diode chip includes at least one electrode pad having one polarity at an upper portion thereof, and the transmissive fluorescent plate includes a through hole into which the electrode pads are inserted. 15. The light-emitting device according to claim 14, wherein the light-transmitting plate is made of at least one ceramic material selected from the group consisting of Y 2 O 3 , BaO, AlN, MgO, CaO, SrO, CaF 2 , Al 2 O 3 , ZrO 3 and lanthanide series ceramics Emitting element. The light emitting device according to claim 14, wherein the light transmitting plate comprises a ceramic sintered body. 16. The light emitting device according to claim 15, wherein the phosphor layer is formed by sintering a phosphor on the AR coating layer on or above the light transmitting plate. 16. The light emitting device according to claim 15, wherein the phosphor layer is formed by coating a light transmitting resin containing a phosphor on the AR coating layer on or above the light transmitting plate. The light-emitting device according to any one of claims 14 to 17, and 19 to 29, wherein the light-transmitting plate includes a laminate structure of light-transmissive materials in which the refractive index gradually decreases in a direction away from the light- Light emitting element.


KR1020100122994A 2010-12-03 2010-12-03 Light emitting device and light emitting diode package KR101752426B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020100122994A KR101752426B1 (en) 2010-12-03 2010-12-03 Light emitting device and light emitting diode package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100122994A KR101752426B1 (en) 2010-12-03 2010-12-03 Light emitting device and light emitting diode package

Publications (2)

Publication Number Publication Date
KR20120061626A KR20120061626A (en) 2012-06-13
KR101752426B1 true KR101752426B1 (en) 2017-07-11

Family

ID=46612139

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100122994A KR101752426B1 (en) 2010-12-03 2010-12-03 Light emitting device and light emitting diode package

Country Status (1)

Country Link
KR (1) KR101752426B1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101982522B1 (en) * 2012-09-26 2019-05-27 엘지이노텍 주식회사 Lighting unit and method thereof
KR101466610B1 (en) * 2013-06-10 2014-12-01 한국화학연구원 Led lamp using uv led chip, and ultraviolet generation having the same
KR20170043839A (en) * 2015-10-14 2017-04-24 (주)라이타이저코리아 Package for Light Emitting Device and Method for Manufacturing thereof
KR20170045851A (en) * 2015-10-20 2017-04-28 (주)라이타이저코리아 Package for Light Emitting Device and Method for Manufacturing thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008159708A (en) * 2006-12-21 2008-07-10 Matsushita Electric Works Ltd Light-emitting device
JP2008166740A (en) * 2006-11-28 2008-07-17 Cree Inc Optical preforming of solid-state light-emitting die, manufacturing method therefor, assembly method, and system
WO2010082286A1 (en) * 2009-01-13 2010-07-22 株式会社小糸製作所 Light emitting module and lighting fixture unit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008166740A (en) * 2006-11-28 2008-07-17 Cree Inc Optical preforming of solid-state light-emitting die, manufacturing method therefor, assembly method, and system
JP2008159708A (en) * 2006-12-21 2008-07-10 Matsushita Electric Works Ltd Light-emitting device
WO2010082286A1 (en) * 2009-01-13 2010-07-22 株式会社小糸製作所 Light emitting module and lighting fixture unit

Also Published As

Publication number Publication date
KR20120061626A (en) 2012-06-13

Similar Documents

Publication Publication Date Title
JP6519311B2 (en) Light emitting device
KR100880638B1 (en) Light emitting device package
US20140151734A1 (en) Light-emitting device and method for manufacturing same
KR101251821B1 (en) Light emitting device package
TWI419372B (en) Package structure and package process of light emitting diode
US7847302B2 (en) Blue LED with phosphor layer for producing white light and different phosphor in outer lens for reducing color temperature
US7700967B2 (en) Illumination device with a wavelength converting element held by a support structure having an aperture
US8486731B2 (en) Light-emitting device and method for manufacturing light-emitting device
JP5422599B2 (en) Light emitting diode package structure and manufacturing method thereof
JP2018082197A (en) Light-emitting device
CN112838156A (en) Light emitting device
KR20070033801A (en) Light emitting diode package and manufacturing method thereof
KR20120117659A (en) Producing method of light emitting element transfer sheet, producing method of light emitting device, light emitting element transfer sheet, and light emitting device
KR20100058779A (en) Light emitting diode package and manufacturing method thereof
CN101123286A (en) LED encapsulation structure and method
US9698324B2 (en) Light emitting device, package, and methods of manufacturing the same
JP2018078188A (en) Light-emitting device
JP2013232484A (en) Light-emitting device and method for manufacturing the same
KR101752426B1 (en) Light emitting device and light emitting diode package
US10439097B2 (en) Method for manufacturing light emitting device
TWM454630U (en) Mixed-light LED structure
KR20150066656A (en) Sulfide phosphor, light emitting device package, backlight unit and its manufacturing method
KR20150019828A (en) Light emitting device package and method of manufacturing the same
JP2008270390A (en) Front cover, light-emitting device and manufacturing method for front cover
JP2013098219A (en) Light-emitting device and manufacturing method of the same

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant