CN112510139A - Quantum dot lamp bead and preparation method thereof - Google Patents
Quantum dot lamp bead and preparation method thereof Download PDFInfo
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- CN112510139A CN112510139A CN202011529070.8A CN202011529070A CN112510139A CN 112510139 A CN112510139 A CN 112510139A CN 202011529070 A CN202011529070 A CN 202011529070A CN 112510139 A CN112510139 A CN 112510139A
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- quantum dot
- glass substrate
- lamp bead
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 80
- 239000011324 bead Substances 0.000 title claims abstract description 25
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 239000011521 glass Substances 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000003292 glue Substances 0.000 claims abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000000843 powder Substances 0.000 claims description 18
- 239000000565 sealant Substances 0.000 claims description 13
- 239000011247 coating layer Substances 0.000 claims description 11
- 230000005284 excitation Effects 0.000 claims description 8
- 238000004806 packaging method and process Methods 0.000 claims description 8
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 claims description 3
- 229910003373 AgInS2 Inorganic materials 0.000 claims description 3
- 229910004613 CdTe Inorganic materials 0.000 claims description 3
- 229910005543 GaSe Inorganic materials 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 3
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 3
- 229910017680 MgTe Inorganic materials 0.000 claims description 3
- 229910002665 PbTe Inorganic materials 0.000 claims description 3
- 229910020698 PbZrO3 Inorganic materials 0.000 claims description 3
- 229910007709 ZnTe Inorganic materials 0.000 claims description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 3
- 229910002113 barium titanate Inorganic materials 0.000 claims description 3
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 238000011049 filling Methods 0.000 claims description 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 3
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 239000004588 polyurethane sealant Substances 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000011780 sodium chloride Substances 0.000 claims description 3
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 6
- 239000001301 oxygen Substances 0.000 abstract description 6
- 229910052760 oxygen Inorganic materials 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 241001391944 Commicarpus scandens Species 0.000 description 2
- 108010043121 Green Fluorescent Proteins Proteins 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910003564 SiAlON Inorganic materials 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a quantum dot lamp bead and a preparation method thereof, the quantum dot lamp bead is characterized in that quantum dots and glue are mixed and coated on a glass substrate and reversely coated on the top end of an LED support, the joint of the glass substrate and the LED support is sealed by the glue, the quantum dots are coated on the glass substrate and directly covered on the top end, so that the quantum dots can be kept away from a chip, the influence of heat generated by the chip on the quantum dots can be avoided, external water oxygen can be isolated, the reaction between the water oxygen and the quantum dots can be avoided, the joint of the LED support and the glass is sealed by the glue, the external water oxygen can be isolated, a sealed space formed by the LED support and the glass substrate is vacuumized, the heat can be prevented from spreading upwards, and the influence of the heat generated by the chip on the quantum dots can be reduced.
Description
Technical Field
The invention belongs to the technical field of LEDs, and particularly relates to a quantum dot lamp bead and a preparation method thereof.
Background
As a new solid illumination light source, the LED has the characteristics of small volume, long service life, good reliability, energy conservation, environmental protection and the like, and is widely applied to the fields of illumination and display. With the rapid development of the LED backlight technology, the consumer's demand for high color gamut of LED tv is increasing, and the color is required to be richer, better in layering and higher in color reduction. The current mainstream method is to adopt a blue light chip to excite red and green fluorescent powder, and the color gamut can only reach 90-95% at most. In addition, the excitation efficiency of the phosphor is low, and the concentration of the phosphor is increased to obtain white light with high color gamut, which undoubtedly increases the cost of the packaging industry and increases the reject ratio. Another mainstream technology for realizing the high color gamut of the LED television is to use a blue LED light source to match a quantum tube and a quantum film, but the quantum dot film has high cost and the quantum dot tube is easy to break in the using process, so the industry hopes that the quantum dot can be applied to the conventional LED as common fluorescent powder.
Disclosure of Invention
The invention aims to provide a quantum dot lamp bead and a preparation method thereof.
The technical problems to be solved by the invention are as follows:
in the traditional method, red and green fluorescent powder or yellow fluorescent powder is mixed with packaging adhesive and then is point-coated on a blue chip, and a white light LED is formed by light color compounding, or R, G, B three chips are mixed into white light, or a quantum dot film and a quantum dot tube have the following defects:
most of the current commercial fluorescent powder is YAG powder or silicate, nitride fluorescent powder, KSF fluorescent powder and beta-SiAlON, and the color gamut can only reach 72-93 percent;
the excitation efficiency of the fluorescent powder is low, the color gamut can be improved only by increasing the using amount, and the requirements of the current society on lower energy consumption, higher energy efficiency and higher color gamut can not be met;
the quantum dot film has higher cost, and the quantum dot tube is easy to break and can not be completely popularized;
the quantum dot powder dots are directly coated in the LED bracket, so that the quantum dots are affected by heat generated by the chip when the lamp beads are lightened.
The purpose of the invention can be realized by the following technical scheme:
a quantum dot lamp bead comprises an LED support, a chip, a glass substrate, a quantum dot coating layer and sealant;
the LED support is of a bowl-cup structure, a chip is fixedly packaged at the bottom of the LED support, a glass substrate is fixedly connected to the top of the LED support through a sealant, and a quantum dot coating layer is arranged on the surface, opposite to the LED support, of the glass substrate.
As a further scheme of the invention, the sealant is a polyurethane sealant.
As a further scheme of the invention, the sealed space formed by the LED bracket and the glass substrate is a vacuum environment.
As a further scheme of the invention, the chip is a blue light chip, and the excitation wavelength of the chip is 440nm-470 nm.
As a further scheme of the invention, the excitation wavelength of the quantum dots in the quantum dot coating layer is 500nm-580nm and 620nm-680 nm.
As a further aspect of the present invention, the glass substrate is made of quartz or acrylic.
As a further scheme of the invention, the LED bracket is made of one of ceramic, PCT, EMC and SMC, and the packaging form is forward mounting or reverse mounting.
As a further scheme of the invention, the preparation method of the quantum dot lamp bead comprises the following steps:
uniformly mixing red quantum dot powder, green quantum dot powder and packaging glue to obtain quantum dot glue for later use;
coating quantum dot glue water on one side of the glass substrate and drying to obtain a quantum dot coating layer;
and step three, covering the glass substrate on the LED support fixed with the chip in a vacuum environment, filling the joint of the LED support and the glass substrate with sealant, baking and curing to obtain the quantum dot lamp bead.
As a further proposal of the invention, the quantum dot material in the quantum dot water is BaS or AgInS2、NaCl、Fe2O3、In2O3、InAs、InN、InP、CdS、CdSe、CdTe、ZnS、ZnSe、ZnTe、GaAs、GaN、GaS、GaSe、InGaAs、MgS、MgSe、MgTe、PbSe、PbTe、Cd(SxSe1-x)、BaTiO3、PbZrO3、CsPbCl3、CsPbBr3、CsPbI3A mixture of one or more of them.
The invention has the beneficial effects that:
the invention provides a quantum dot lamp bead and a preparation method thereof, which are characterized in that quantum dots and glue are mixed and coated on a glass substrate and reversely cover the top end of an LED support, the joint of the glass substrate and the LED support is sealed by the glue, the quantum dots are coated on the glass substrate and directly cover the top end in the direction of coating, so that the quantum dots can be far away from a chip, the influence of heat generated by the chip on the quantum dots can be avoided, external water oxygen can be isolated, the reaction between the water oxygen and the quantum dots can be avoided, the joint of the LED support and the glass is sealed by the glue, the external water oxygen can be isolated, a sealed space formed by the LED support and the glass substrate is vacuumized, the heat can be prevented from being upwards transmitted, and the influence of the heat generated by the chip on the quantum dots can be reduced.
Drawings
The invention is described in further detail below with reference to the figures and specific embodiments.
Fig. 1 is a schematic structural diagram of the quantum dot lamp bead.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
A quantum dot lamp bead comprises an LED support 1, a chip 2, a glass substrate 3, a quantum dot coating layer 4 and a sealant 5;
the LED bracket 1 is of a bowl-cup structure, a chip 2 is fixedly packaged at the bottom of the LED bracket 1, a glass substrate 3 is fixedly connected to the top of the LED bracket 1 through a sealant 5, and a quantum dot coating layer 4 is arranged on one surface of the glass substrate 3 opposite to the LED bracket 1;
the sealant 5 is a sealant with good heat insulation performance, and in one embodiment of the invention, the sealant 5 is a polyurethane sealant;
the sealed space formed by the LED bracket 1 and the glass substrate 3 is a vacuum environment;
the chip 2 is a blue light chip, and the excitation wavelength of the chip 2 is 440nm-470 nm;
the glass substrate is made of quartz or acrylic;
the LED bracket is made of one of ceramic, PCT, EMC and SMC, and the packaging form is forward mounting or reverse mounting;
the preparation method of the quantum dot lamp bead comprises the following steps:
uniformly mixing red quantum dot powder, green quantum dot powder and packaging glue to obtain quantum dot glue for later use;
coating quantum dot glue water on one side of the glass substrate 3, and drying to obtain a quantum dot coating layer 4;
and step three, covering the glass substrate 3 on the LED support fixed with the chip 2 in a vacuum environment, filling the joint of the LED support 1 and the glass substrate 3 with sealant 5, baking and curing to obtain the quantum dot lamp bead.
The excitation wavelength of the quantum dots in the quantum dot gluing is 500nm-580nm of green quantum dot powder and 620nm-680nm of red quantum dot powder;
is made of BaS and AgInS2、NaCl、Fe2O3、In2O3、InAs、InN、InP、CdS、CdSe、CdTe、ZnS、ZnSe、ZnTe、GaAs、GaN、GaS、GaSe、InGaAs、MgS、MgSe、MgTe、PbSe、PbTe、Cd(SxSe1-x)、BaTiO3、PbZrO3、CsPbCl3、CsPbBr3、CsPbI3A mixture of one or more of;
the foregoing is merely exemplary and illustrative of the present invention and various modifications, additions and substitutions may be made by those skilled in the art to the specific embodiments described without departing from the scope of the invention as defined in the following claims.
Claims (9)
1. The quantum dot lamp bead is characterized by comprising an LED support (1), a chip (2), a glass substrate (3), a quantum dot coating layer (4) and a sealant (5);
LED support (1) is the bowl cup structure, and the bottom of LED support (1) is fixed to be packaged with chip (2), sealed glue (5) fixedly connected with glass substrate (3) are passed through at the top of LED support (1), be provided with quantum dot coating layer (4) on glass substrate (3) and LED support (1) relative one side.
2. The quantum dot lamp bead as claimed in claim 1, wherein the sealant (5) is polyurethane sealant.
3. The quantum dot lamp bead as claimed in claim 1, wherein the sealed space formed by the LED support (1) and the glass substrate (3) is a vacuum environment.
4. The quantum dot lamp bead as claimed in claim 1, wherein the chip (2) is a blue chip, and the excitation wavelength of the chip (2) is 440nm-470 nm.
5. The quantum dot lamp bead of claim 4, wherein the excitation wavelength of the quantum dots in the quantum dot coating layer is 500nm-580nm for green quantum dots and 620nm-680nm for red quantum dots.
6. The quantum dot lamp bead as claimed in claim 1, wherein the glass substrate (3) is made of quartz or acrylic.
7. A quantum dot lamp bead according to claim 1, wherein the material of the LED support (1) is one of ceramic, PCT, EMC and SMC, and the packaging form is a front mounting or an upside-down mounting.
8. The preparation method of the quantum dot lamp bead as claimed in claim 1, characterized by comprising the following steps:
uniformly mixing red quantum dot powder, green quantum dot powder and packaging glue according to a preset proportion to obtain quantum dot glue for later use;
coating the quantum dot glue on one side of the glass substrate (3) and drying to obtain a quantum dot coating layer (4);
and step three, covering the glass substrate (3) on the LED support (1) fixed with the chip (2) in a vacuum environment, filling the joint of the LED support (1) and the glass substrate (3) with a sealant (5), baking and curing to obtain the quantum dot lamp bead.
9. The method for preparing quantum dot lamp beads according to claim 8, wherein the quantum dot material in the quantum dot water is BaS or AgInS2、NaCl、Fe2O3、In2O3、InAs、InN、InP、CdS、CdSe、CdTe、ZnS、ZnSe、ZnTe、GaAs、GaN、GaS、GaSe、InGaAs、MgS、MgSe、MgTe、PbSe、PbTe、Cd(SxSe1-x)、BaTiO3、PbZrO3、CsPbCl3、CsPbBr3、CsPbI3A mixture of one or more of them.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011529070.8A CN112510139A (en) | 2020-12-22 | 2020-12-22 | Quantum dot lamp bead and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011529070.8A CN112510139A (en) | 2020-12-22 | 2020-12-22 | Quantum dot lamp bead and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
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| CN112510139A true CN112510139A (en) | 2021-03-16 |
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| CN202011529070.8A Pending CN112510139A (en) | 2020-12-22 | 2020-12-22 | Quantum dot lamp bead and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115440869A (en) * | 2022-08-16 | 2022-12-06 | 芜湖聚飞光电科技有限公司 | Quantum dot membrane assembly, manufacturing method thereof and LED packaging body |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106449620A (en) * | 2016-10-10 | 2017-02-22 | 天津中环电子照明科技有限公司 | Remote quantum dot LED device based on blue-light and green-light LED chips |
| CN206250216U (en) * | 2016-11-22 | 2017-06-13 | 广州视源电子科技股份有限公司 | Quantum dot led |
| CN208873757U (en) * | 2018-11-09 | 2019-05-17 | 易美芯光（北京）科技有限公司 | A kind of quantum dot LED encapsulation structure |
-
2020
- 2020-12-22 CN CN202011529070.8A patent/CN112510139A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106449620A (en) * | 2016-10-10 | 2017-02-22 | 天津中环电子照明科技有限公司 | Remote quantum dot LED device based on blue-light and green-light LED chips |
| CN206250216U (en) * | 2016-11-22 | 2017-06-13 | 广州视源电子科技股份有限公司 | Quantum dot led |
| CN208873757U (en) * | 2018-11-09 | 2019-05-17 | 易美芯光（北京）科技有限公司 | A kind of quantum dot LED encapsulation structure |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115440869A (en) * | 2022-08-16 | 2022-12-06 | 芜湖聚飞光电科技有限公司 | Quantum dot membrane assembly, manufacturing method thereof and LED packaging body |
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