CN206250216U - Quantum dot led - Google Patents
Quantum dot led Download PDFInfo
- Publication number
- CN206250216U CN206250216U CN201621266168.8U CN201621266168U CN206250216U CN 206250216 U CN206250216 U CN 206250216U CN 201621266168 U CN201621266168 U CN 201621266168U CN 206250216 U CN206250216 U CN 206250216U
- Authority
- CN
- China
- Prior art keywords
- quantum dot
- open slot
- lamina
- seal groove
- support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
The utility model is related to a kind of quantum dot LED, including support, LED wafer, lamina of septum pellucidum, transparent cover plate and the electric conductor for being provided with open slot;Electric conductor is located in open slot through the bottom of open slot, and one end, and the other end is located at outside open slot;Lamina of septum pellucidum in the open slot and with support fixed seal connection, transparent cover plate located at lamina of septum pellucidum away from LED wafer side and with support fixed seal connection;The first seal groove is formed between lamina of septum pellucidum and the bottom of open slot, LED wafer is located in the first seal groove and is fixed on the bottom of open slot, and is electrically connected with electric conductor;The second seal groove is formed between lamina of septum pellucidum and transparent cover plate, the second seal groove is used to fill the quantum dot of at least two sizes.The utility model overall structure is simple, and manufacture craft is also simple;Meanwhile, the quantum dot in the second seal groove is directly distributed in LED wafer top, quantum dot in the second seal groove can light be excited, utilization rate is high.
Description
Technical field
The utility model is related to semiconductor light emitting technical field, more particularly to a kind of quantum dot LED.
Background technology
Quantum dot is a kind of nano semiconductor incandescnet particle, and (Light Emitting Diode's quantum dot light with LED
Diode) can be used for display device with reference to the quantum dot LED being made.
The structure of traditional quantum dot LED is as shown in figure 1, blue-ray LED 1 is launched high-purity blue light illumination and arrived during work
Glass tube 3 of the vacuum seal equipped with quantum dot, inspires three primary colours and is mixed into white light by various sizes of quantum dot, so as to realize the back of the body
The colour gamut high of light.However, traditional this quantum dot LED needs to be respectively completed the paster of blue-ray LED 1 on LED pcb boards 4
Fixation with stent-like structure part 2 by Quantum Dot Glass pipe 3, it is necessary to put in stent-like structure part 2 and fixed, complex structure.
Utility model content
Based on this, it is necessary to regarding to the issue above, there is provided a kind of quantum dot LED of simple structure.
A kind of quantum dot LED, including LED wafer, lamina of septum pellucidum, transparent cover plate, electric conductor and the support of open slot is provided with,
The electric conductor is located in the open slot through the bottom of the open slot, and one end, and the other end is located at outside the open slot;
The lamina of septum pellucidum in the open slot and with the support fixed seal connection, the transparent cover plate is located at
The lamina of septum pellucidum away from the LED wafer side and with the support fixed seal connection, the lamina of septum pellucidum opens with described
The first seal groove is formed between the bottom of mouth groove, the LED wafer is located in first seal groove and is fixed on the open slot
Bottom, and electrically connected with the electric conductor, the second seal groove is formed between the lamina of septum pellucidum and the transparent cover plate, it is described
Second seal groove is used to fill the quantum dot of at least two sizes.
Above-mentioned quantum dot LED, the first seal groove is formed by the bottom using lamina of septum pellucidum and open slot, transparent cover plate with
The second seal groove is formed between lamina of septum pellucidum, quantum dot is filled in the second seal groove, LED wafer is fixed on the first seal groove
Interior, LED wafer can be electrically connected by electric conductor with the electric supply installation outside open slot.In this way, compared to traditional quantum dot
LED, the utility model does not need glass tube, can be using the quantum dot in support, LED wafer and the second seal groove as overall knot
Structure, is welded in electric supply installation, and overall structure is simple, and manufacture craft is also simple;Meanwhile, the quantum dot in the second seal groove is straight
Connect and be distributed in LED wafer top, quantum dot in the second seal groove can light be excited, utilization rate is high.
Brief description of the drawings
Fig. 1 is the front view of traditional quantum dot LED;
Fig. 2 is the front view of quantum dot LED in an embodiment.
Specific embodiment
With reference to Fig. 2, a kind of quantum dot LED in an embodiment, including be provided with the support 110 of open slot, LED wafer 120,
Lamina of septum pellucidum 130, transparent cover plate 140 and electric conductor 150, electric conductor 150 is through the bottom of open slot, and one end is located at open slot
Interior, the other end is located at outside open slot.Lamina of septum pellucidum 130 in the open slot and with the fixed seal connection of support 110, transparent cover plate
140 located at lamina of septum pellucidum 130 away from the side of LED wafer 120 and with the fixed seal connection of support 110.Lamina of septum pellucidum 130 and opening
Form the first seal groove a between the bottom of groove, LED wafer 120 is located in the first seal groove the bottom for being fixed on open slot, and with
Electric conductor 150 is electrically connected, and the second seal groove b, the second seal groove b is formed between lamina of septum pellucidum 130 and transparent cover plate 140 for filling out
Fill the quantum dot of at least two sizes.
Support 110 is used to fix LED wafer 120, lamina of septum pellucidum 130 and transparent cover plate 140.LED wafer 120 can send
Coloured light.Specifically, can using existing known connected mode realize lamina of septum pellucidum 130 and support 110, transparent cover plate 140 with
The fixed seal connection of support 110, it is for instance possible to use chemical adhesive is by lamina of septum pellucidum 130 and the seamless sticky of transparent cover plate 140
Patch is fixed on support 110.
LED wafer 120 connects the electric supply installation of outside by electric conductor 150, and specifically, electric conductor 150 is located at open slot
Outer one end electrical connection electric supply installation, can power so that LED wafer 120 is luminous for LED wafer 120.In the present embodiment, with reference to figure
2, LED wafer 120 is provided with wire 121, and wire 121 is electrically connected with electric conductor 150, so as to realize LED wafer 120 and electric conductor
150 electrical connection.
Lamina of septum pellucidum 130 refers to the dividing plate of colourless light-permeable so that the colored light that LED wafer 120 sends can pass through transparent
Dividing plate 130 is irradiated on the quantum dot in the second seal groove b, and quantum dot swashs under the irradiation of the colored light that LED wafer 120 sends
Three primary colours are sent, the white light of colour gamut high is formed.Similarly, transparent cover plate 140 refers to the cover plate of colourless light-permeable, does not influence quantum dot to send out
The color of the white light for going out.
Above-mentioned quantum dot LED, the first seal groove a, transparency cover are formed by using lamina of septum pellucidum 130 with the bottom of open slot
The second seal groove b is formed between plate 140 and lamina of septum pellucidum 130, b fills quantum dot in the second seal groove, and LED wafer 120 is consolidated
Due in the first seal groove a, LED wafer 120 can be electrically connected by electric conductor 150 with the electric supply installation outside open slot.In this way,
Compared to traditional quantum dot LED, the utility model does not need glass tube, can seal support 110, LED wafer 120 and second
Quantum dot in groove b is welded in electric supply installation as overall structure, and overall structure is simple, and manufacture craft is also simple;Together
When, the quantum dot in the second seal groove b is directly distributed in the top of LED wafer 120, and the quantum dot in the second seal groove b can light
It is excited, utilization rate is high.
In one embodiment, the first seal groove a is vacuum cavity.In this way, LED wafer 120 can be avoided to be oxidized, improve
The illumination effect of LED wafer 120.In the present embodiment, glue is filled in the first seal groove a, the first seal groove a can be processed as very
Cavity body.It is appreciated that in other embodiments, the first seal groove a can also be processed as into vacuum cavity using other modes.
In one embodiment, please continue to refer to Fig. 2, the cross section of the first seal groove a and the second seal groove b is away from opening
In isosceles trapezoid on the direction of the bottom of groove, and two symmetrical overlapping of axles for falling isosceles trapezoid.So so that the second seal groove
Width of the overall width of b more than the first seal groove a, so that the quantum dot in the second seal groove b can absorb LED wafer 120
The light that more extensive angle is launched.
In the present embodiment, the contact surface of the seal groove a of support 110 and first is provided with projection 111, and projection 111 is away from opening
The bottom end of groove and the fixed seal connection of lamina of septum pellucidum 130.Now, the Breadth Maximum of the first seal groove a is less than the second sealing
The minimum widith of groove b, the Breadth Maximum of the cross-sectional width of lamina of septum pellucidum 130 more than the first seal groove a and less than or equal to the
The minimum widith of two seal groove b.In this way, projection 111 can play a part of to support lamina of septum pellucidum 130, lamina of septum pellucidum 130 can be improved
The stability being connected with support 110, so as to improve the reliability of quantum dot LED.
In the present embodiment, support 110 is the support that recess 112 is provided with towards at the opening of open slot, transparent cover plate 140 with
Recess 112 is tightly connected.In this way, transparent cover plate 140 can be mounted in that fixed seal connection is carried out on support 110, can be further
The stability that lamina of septum pellucidum 130 is connected with support 110 is improved, so as to further improve the reliability of quantum dot LED.
In one embodiment, support 110 be EMC (Epoxy Molding Compound epoxy molding materials) supports or
PCT (poly terephthalic acid Isosorbide-5-Nitrae-cyclohexane dicarboxylates) support.EMC supports and PCT supports are heat-resist, can improve quantum dot
The integrally-built stability of LED.It is appreciated that in other embodiments, support 110 can also use other types, such as PPA
(polyphtalamide) support.
Specifically, in the present embodiment, support 110 is white support.The wall of the first seal groove a and the second seal groove b is white
Color support, due to white can reflected light, therefore by the way that using white support, the absorption to light can be reduced, improve the utilization of light
Rate.
In one embodiment, LED wafer 120 is blue LED wafers.Blue light wavelength is shorter, and energy is larger, and compared to purple
Light, blue light is smaller to human injury.Therefore, by using blue LED wafers, can ensure safety in utilization on the premise of,
Improve the illumination effect of quantum dot LED.It is appreciated that in other embodiments, it would however also be possible to employ send other face in visible ray
The LED wafer 120 of color.
In one embodiment, lamina of septum pellucidum 130 and transparent cover plate 140 are glass plate.Glass plate translucency and thermal insulation
It is good, the refraction to light can be strengthened, and the protecting effect heat-insulated to quantum dot can be improved, so as to further improve quantum dot LED
Illumination effect.
In one embodiment, electric conductor 150 includes at least two panels sheet metal.One end that sheet metal is located at outside open slot can be with
Electric supply installation sticking type is electrically connected, and improves the steadiness between support 110 and electric supply installation, meanwhile, by using at least two panels
Sheet metal, can avoid that, because a wherein sheet metal cannot the LED wafer 120 that cause be powered off conduction, LED wafer 120 can be improved
The reliability electrically connected with electric supply installation.
In one embodiment, above-mentioned quantum dot LED also includes pcb board 160, the support 110 1 where the bottom of open slot
Pcb board 160 is fixed at end, and electric conductor 150 is located at one end electrical connection pcb board 160 outside open slot.That is, in the present embodiment, use
In the electric supply installation powered to LED wafer 120 be pcb board 160.Specifically, pcb board 160 is built-in with process circuit, to ensure
Effective work of LED wafer 120.
Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned reality
Apply all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, the scope of this specification record is all considered to be.
Embodiment described above only expresses several embodiments of the present utility model, and its description is more specific and detailed,
But therefore can not be interpreted as the limitation to utility model patent scope.It should be pointed out that for the common skill of this area
For art personnel, without departing from the concept of the premise utility, various modifications and improvements can be made, these are belonged to
Protection domain of the present utility model.Therefore, the protection domain of the utility model patent should be determined by the appended claims.
Claims (8)
1. a kind of quantum dot LED, it is characterised in that including LED wafer, lamina of septum pellucidum, transparent cover plate, electric conductor and be provided with opening
The support of groove, the electric conductor is located in the open slot through the bottom of the open slot, and one end, and the other end is located at described
Outside open slot;
The lamina of septum pellucidum in the open slot and with the support fixed seal connection, the transparent cover plate is located at described
Lamina of septum pellucidum away from the LED wafer side and with the support fixed seal connection, the lamina of septum pellucidum and the open slot
Bottom between form the first seal groove, the LED wafer is located in first seal groove bottom for being fixed on the open slot
Portion, and electrically connected with the electric conductor, the second seal groove, described second are formed between the lamina of septum pellucidum and the transparent cover plate
Seal groove is used to fill the quantum dot of at least two sizes.
2. quantum dot LED according to claim 1, it is characterised in that the lamina of septum pellucidum and the transparent cover plate are
Glass plate.
3. quantum dot LED according to claim 1, it is characterised in that first seal groove and second seal groove
Cross section on the direction of the bottom away from the open slot in isosceles trapezoid, and two symmetry axis weights for falling isosceles trapezoid
Close.
4. quantum dot LED according to claim 3, it is characterised in that support contact with first seal groove
Face is provided with projection, bottom end and the lamina of septum pellucidum fixed seal connection of the projection away from the open slot.
5. quantum dot LED according to claim 3, it is characterised in that the support is towards the opening of the open slot
Place is provided with the support of recess, and the transparent cover plate is connected with the concave seal.
6. quantum dot LED according to claim 1, it is characterised in that the electric conductor includes at least two panels sheet metal.
7. quantum dot LED according to claim 1, it is characterised in that the support is EMC supports or PCT supports.
8. quantum dot LED according to claim 1, it is characterised in that also including pcb board, the bottom institute of the open slot
Described support one end be fixed on the pcb board, and one end electrical connection that the electric conductor is located at outside the open slot is described
Pcb board.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201621266168.8U CN206250216U (en) | 2016-11-22 | 2016-11-22 | Quantum dot led |
PCT/CN2017/103466 WO2018095131A1 (en) | 2016-11-22 | 2017-09-26 | Quantum dot led |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201621266168.8U CN206250216U (en) | 2016-11-22 | 2016-11-22 | Quantum dot led |
Publications (1)
Publication Number | Publication Date |
---|---|
CN206250216U true CN206250216U (en) | 2017-06-13 |
Family
ID=59001883
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201621266168.8U Active CN206250216U (en) | 2016-11-22 | 2016-11-22 | Quantum dot led |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN206250216U (en) |
WO (1) | WO2018095131A1 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108020958A (en) * | 2017-12-04 | 2018-05-11 | 福州大学 | A kind of encapsulating structure for direct-light-type backlight and preparation method thereof |
WO2018095131A1 (en) * | 2016-11-22 | 2018-05-31 | 广州视源电子科技股份有限公司 | Quantum dot led |
CN109494290A (en) * | 2018-10-19 | 2019-03-19 | 安徽芯瑞达科技股份有限公司 | A kind of high colour gamut quantum dot LED lamp bead and its packaging method |
CN112510139A (en) * | 2020-12-22 | 2021-03-16 | 安徽芯瑞达科技股份有限公司 | Quantum dot lamp bead and preparation method thereof |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016076634A (en) * | 2014-10-08 | 2016-05-12 | エルジー ディスプレイ カンパニー リミテッド | Led package, backlight unit, and liquid crystal display device |
CN204289509U (en) * | 2014-11-20 | 2015-04-22 | Tcl集团股份有限公司 | Quantum dot LED encapsulation structure |
CN206250216U (en) * | 2016-11-22 | 2017-06-13 | 广州视源电子科技股份有限公司 | Quantum dot led |
-
2016
- 2016-11-22 CN CN201621266168.8U patent/CN206250216U/en active Active
-
2017
- 2017-09-26 WO PCT/CN2017/103466 patent/WO2018095131A1/en active Application Filing
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018095131A1 (en) * | 2016-11-22 | 2018-05-31 | 广州视源电子科技股份有限公司 | Quantum dot led |
CN108020958A (en) * | 2017-12-04 | 2018-05-11 | 福州大学 | A kind of encapsulating structure for direct-light-type backlight and preparation method thereof |
CN108020958B (en) * | 2017-12-04 | 2020-09-01 | 福州大学 | Packaging structure for direct type backlight source and manufacturing method thereof |
CN109494290A (en) * | 2018-10-19 | 2019-03-19 | 安徽芯瑞达科技股份有限公司 | A kind of high colour gamut quantum dot LED lamp bead and its packaging method |
CN112510139A (en) * | 2020-12-22 | 2021-03-16 | 安徽芯瑞达科技股份有限公司 | Quantum dot lamp bead and preparation method thereof |
Also Published As
Publication number | Publication date |
---|---|
WO2018095131A1 (en) | 2018-05-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN206250216U (en) | Quantum dot led | |
CN208284498U (en) | A kind of LED component, backlight lamp bar and backlight module | |
CN109888079A (en) | A kind of deep-UV light-emitting diode encapsulation | |
CN108110120A (en) | Quantum dot LED and display device | |
TW201244177A (en) | LED package structure using a prefabricated phosphor cap | |
CN107706281A (en) | Has the wafer-class encapsulation light-emitting device of moisture barrier structure | |
CN219716884U (en) | Double-layer fluorescent glue CSP packaging structure | |
CN104241502B (en) | LED packaging structure | |
CN208873757U (en) | A kind of quantum dot LED encapsulation structure | |
CN207199663U (en) | A kind of double-colored temperature LED component and light-emitting device | |
CN210156421U (en) | LED packaging body | |
CN202678405U (en) | Light emitting diode (LED) device | |
CN207009476U (en) | A kind of high-power LED integrated chip encapsulating structure | |
CN207781635U (en) | A kind of the wafer-level package LED component and backlight module of multilayered structure | |
CN207181896U (en) | A kind of backlight source module and display device based on quantum film | |
CN110085730A (en) | Light emitting device package structure, quantum dot LED light source and electronic device | |
CN205264743U (en) | Quantum dot LED structure | |
CN209026542U (en) | A kind of dual wavelength white LED lamp | |
CN209000952U (en) | A kind of LED core chip package | |
CN207398144U (en) | A kind of LED component, display module and display screen | |
TWI527274B (en) | Light emitting diode package structure | |
CN202996902U (en) | Safe and reliable LED lamp bead | |
CN205900591U (en) | LAMP347 colloid packaging structure | |
CN205944137U (en) | Buckled face guard encapsulation panel | |
CN205264754U (en) | High white light hangs down light decay LED |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant |